Component Reference¶

Lumped Components¶

Resistencia¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Resistencia
Descripció	resistencia
Schematic entry	`R`
Netlist entry	`R`
Tipus	AnalogComponent
Bitmap file	resistencia
Propietats	6
Category	lumped components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
R	50 Ohm	Si	resistencia en Ohmios
Temp	26.85	no	temperatura de simulación en grados Celsius
Tc1	0.0	no	coeficiente de temperatura de primer orden
Tc2	0.0	no	coeficiente de temperatura de segundo orden
Tnom	26.85	no	temperatura a la que se extraen els parámetros
Symbol	european	no	schematic symbol [european, US]

Resistor Us¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Resistencia US
Descripció	resistencia
Schematic entry	`R`
Netlist entry	`R`
Tipus	AnalogComponent
Bitmap file	resistor_us
Propietats	6
Category	lumped components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
R	50 Ohm	Si	resistencia en Ohmios
Temp	26.85	no	temperatura de simulación en grados Celsius
Tc1	0.0	no	coeficiente de temperatura de primer orden
Tc2	0.0	no	coeficiente de temperatura de segundo orden
Tnom	26.85	no	temperatura a la que se extraen els parámetros
Symbol	US	no	schematic symbol [european, US]

Condensador¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Condensador
Descripció	condensador
Schematic entry	`C`
Netlist entry	`C`
Tipus	AnalogComponent
Bitmap file	condensador
Propietats	3
Category	lumped components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
C	1 pF	Si	capacidad en Faradios
V		no	tensión inicial para la simulación de transitorio
Symbol	neutral	no	schematic symbol [neutral, polar]

Bobina¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Bobina
Descripció	bobina
Schematic entry	`L`
Netlist entry	`L`
Tipus	AnalogComponent
Bitmap file	bobina
Propietats	2
Category	lumped components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
L	1 nH	Si	inductancia en Henrios
I		no	initial current for transient simulation

Tierra¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Tierra
Descripció	tierra (potencial de referencia)
Schematic entry	`GND`
Netlist entry
Tipus	Componente
Bitmap file	gnd
Propietats	0
Category	lumped components

Conexión de Subcircuito¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Conexión de Subcircuito
Descripció	conexión de un subcircuit
Schematic entry	`Port`
Netlist entry	`P`
Tipus	Componente
Bitmap file	subport
Propietats	2
Category	lumped components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Num	1	Si	número de la conexión dentro del subcircuit
Tipus	analog	no	type of the port (for digital simulation only) [analog, in, out, inout]

Transformador¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Transformador
Descripció	transformador ideal
Schematic entry	`Tr`
Netlist entry	`Tr`
Tipus	AnalogComponent
Bitmap file	transformer
Propietats	1
Category	lumped components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
T	1	Si	coeficiente de transformación de tensión

Symmetric Transformer¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Transformador simétrico
Descripció	transformador ideal simétrico
Schematic entry	`sTr`
Netlist entry	`Tr`
Tipus	AnalogComponent
Bitmap file	symtrans
Propietats	2
Category	lumped components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
T1	1	Si	coeficiente de transformación de tensión de la bobina 1
T2	1	Si	coeficiente de transformación de tensión de la bobina 2

Dc Block¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Bloque dc
Descripció	bloque dc
Schematic entry	`DCBlock`
Netlist entry	`C`
Tipus	AnalogComponent
Bitmap file	dcblock
Propietats	1
Category	lumped components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
C	1 uF	no	para simulación transitoria: capacidad en Faradios

Dc Feed¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Alimentación dc
Descripció	alimentación dc
Schematic entry	`DCFeed`
Netlist entry	`L`
Tipus	AnalogComponent
Bitmap file	dcfeed
Propietats	1
Category	lumped components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
L	1 uH	no	para simulación transitoria: inductancia en Henrios

Polarización T¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Polarización T
Descripció	polarización t
Schematic entry	`BiasT`
Netlist entry	`X`
Tipus	AnalogComponent
Bitmap file	biast
Propietats	2
Category	lumped components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
L	1 uH	no	para simulación transitoria: inductancia en Henrios
C	1 uF	no	para simulación transitoria: capacidad en Faradios

Atenuador¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Atenuador
Descripció	atenuador
Schematic entry	`Attenuator`
Netlist entry	`X`
Tipus	AnalogComponent
Bitmap file	atenuador
Propietats	3
Category	lumped components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
L	10 dB	Si	atenuación de potencia
Zref	50 Ohm	no	impedancia de referencia
Temp	26.85	no	temperatura de simulación en grados Celsius

Amplificador¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Amplificador
Descripció	amplificador ideal
Schematic entry	`Amp`
Netlist entry	`X`
Tipus	AnalogComponent
Bitmap file	amplifier
Propietats	4
Category	lumped components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
G	10	Si	ganancia de tensión
Z1	50 Ohm	no	impedancia de referencia del conector de entrada
Z2	50 Ohm	no	impedancia de referencia del conector de salida
NF	0 dB	no	noise figure

Aislante¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Aislante
Descripció	aislante
Schematic entry	`Isolator`
Netlist entry	`X`
Tipus	AnalogComponent
Bitmap file	aislante
Propietats	3
Category	lumped components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Z1	50 Ohm	no	impedancia de referencia del conector de entrada
Z2	50 Ohm	no	impedancia de referencia del conector de salida
Temp	26.85	no	temperatura de simulación en grados Celsius

Circulador¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Circulador
Descripció	circulador
Schematic entry	`Circulator`
Netlist entry	`X`
Tipus	AnalogComponent
Bitmap file	circulador
Propietats	3
Category	lumped components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Z1	50 Ohm	no	impedancia de referencia de la conexión 1
Z2	50 Ohm	no	impedancia de referencia de la conexión 2
Z3	50 Ohm	no	impedancia de referencia de la conexión 3

Girador¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Girador
Descripció	girador (inversor de impendancia)
Schematic entry	`Gyrator`
Netlist entry	`X`
Tipus	AnalogComponent
Bitmap file	gyrator
Propietats	2
Category	lumped components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
R	50 Ohm	Si	porcentaje de girador
Zref	50 Ohm	no	impedancia de referencia

Desplazador de Fase¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Desplazador de Fase
Descripció	desplazador de fase
Schematic entry	`PShift`
Netlist entry	`X`
Tipus	AnalogComponent
Bitmap file	pshifter
Propietats	2
Category	lumped components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
phi	90	Si	desplazamiento de fase en grados
Zref	50 Ohm	no	impedancia de referencia

Acoplador¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Acoplador
Descripció	acoplador ideal
Schematic entry	`Coupler`
Netlist entry	`X`
Tipus	AnalogComponent
Bitmap file	coupler
Propietats	3
Category	lumped components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
k	0.7071	Si	factor de acoplamiento
phi	180	Si	desplazamiento de fase en grados
Z	50 Ohm	no	impedancia de referencia

Hybrid¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Hybrid
Descripció	hybrid (unsymmetrical 3dB coupler)
Schematic entry	`Hybrid`
Netlist entry	`X`
Tipus	AnalogComponent
Bitmap file	hybrid
Propietats	2
Category	lumped components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
phi	90	Si	desplazamiento de fase en grados
Zref	50 Ohm	no	impedancia de referencia

Sonda de Corriente¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Sonda de Corriente
Descripció	sonda de corriente
Schematic entry	`IProbe`
Netlist entry	`Pr`
Tipus	AnalogComponent
Bitmap file	iprobe
Propietats	0
Category	lumped components

Sonda de Tensión¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Sonda de Tensión
Descripció	sonda de tensión
Schematic entry	`VProbe`
Netlist entry	`Pr`
Tipus	AnalogComponent
Bitmap file	vprobe
Propietats	0
Category	lumped components

Bobinas acopladas¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Bobinas acopladas
Descripció	dos bobinas acopladas
Schematic entry	`MUT`
Netlist entry	`Tr`
Tipus	AnalogComponent
Bitmap file	mutual
Propietats	3
Category	lumped components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
L1	1 mH	no	inductancia de la bobina 1
L2	1 mH	no	inductancia de la bobina 2
k	0.9	no	Inductancia mutua entre la bobina 1 y 2

3 Bobinas Acopladas¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	3 Bobinas Acopladas
Descripció	tres bobinas mutuas
Schematic entry	`MUT2`
Netlist entry	`Tr`
Tipus	AnalogComponent
Bitmap file	mutual2
Propietats	6
Category	lumped components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
L1	1 mH	no	inductancia de la bobina 1
L2	1 mH	no	inductancia de la bobina 2
L3	1 mH	no	inductancia de la bobina 3
k12	0.9	no	Inductancia mutua entre la bobina 1 y 2
k13	0.9	no	Inductancia mutua entre la bobina 1 y 3
k23	0.9	no	Inductancia mutua entre la bobina 2 y 3

N Mutual Inductors¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	N Mutual Inductors
Descripció	several mutual inductors
Schematic entry	`MUTX`
Netlist entry	`Tr`
Tipus	AnalogComponent
Bitmap file	mutualx
Propietats	11
Category	lumped components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
coils	4	no	number of mutual inductances
L1	1 mH	no	inductancia de la bobina 1
L2	1 mH	no	inductancia de la bobina 2
L3	1 mH	no	inductancia de la bobina 3
L4	1 mH	no	inductance of coil 4
k12	0.9	no	coupling factor between coil 1 and coil 2
k13	0.9	no	coupling factor between coil 1 and coil 3
k14	0.9	no	coupling factor between coil 1 and coil 4
k23	0.9	no	coupling factor between coil 2 and coil 3
k24	0.9	no	coupling factor between coil 2 and coil 4
k34	0.9	no	coupling factor between coil 3 and coil 4

Conmutador¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Conmutador
Descripció	conmutador (controlado por temps)
Schematic entry	`Switch`
Netlist entry	`S`
Tipus	AnalogComponent
Bitmap file	switch
Propietats	6
Category	lumped components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
init	off	no	initial state [on, off]
time	1 ms	no	time when state changes (semicolon separated list possible, even numbered lists are repeated)
Ron	0	no	resistencia del estado “on” en ohmios
Roff	1e12	no	resistencia del estado “off” en ohmios
Temp	26.85	no	temperatura de simulación en grados Celsius
MaxDuration	1e-6	no	Max possible switch transition time (transition time 1/100 smallest value in ‘time’, or this number)

Relay¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Relay
Descripció	relay
Schematic entry	`Relais`
Netlist entry	`S`
Tipus	AnalogComponent
Bitmap file	relais
Propietats	5
Category	lumped components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Vt	0.5 V	no	límite de tensión en Voltios
Vh	0.1 V	no	hísteresis de tensión en Voltios
Ron	0	no	resistencia del estado “on” en Ohmios
Roff	1e12	no	resistencia del estado “off” en Ohmios
Temp	26.85	no	temperatura de simulación en grados Celsius

Equation Defined Rf Device¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Equation Defined RF Device
Descripció	equation defined RF device
Schematic entry	`RFEDD`
Netlist entry	`RF`
Tipus	AnalogComponent
Bitmap file	rfedd
Propietats	7
Category	lumped components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Tipus	Y	no	type of parameters [Y, Z, S]
Ports	2	no	número de conexiones
duringDC	open	no	representation during DC analysis [open, short, unspecified, zerofrequency]
P11	0	no	parameter equation 11
P12	0	no	parameter equation 12
P21	0	no	parameter equation 21
P22	0	no	parameter equation 22

Equation Defined 2-Port Rf Device¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Equation Defined 2-port RF Device
Descripció	equation defined 2-port RF device
Schematic entry	`RFEDD2P`
Netlist entry	`RF`
Tipus	AnalogComponent
Bitmap file	rfedd
Propietats	6
Category	lumped components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Tipus	Y	no	type of parameters [Y, Z, S, H, G, A, T]
duringDC	open	no	representation during DC analysis [open, short, unspecified, zerofrequency]
P11	0	no	parameter equation 11
P12	0	no	parameter equation 12
P21	0	no	parameter equation 21
P22	0	no	parameter equation 22

Sources¶

Dc Voltage Source¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Fuente de Tensión dc
Descripció	fuente de tensión dc ideal
Schematic entry	`Vdc`
Netlist entry	`V`
Tipus	AnalogComponent
Bitmap file	dc_voltage
Propietats	1
Category	sources

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
U	1 V	Si	tensión en Voltios

Dc Current Source¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Fuente de intensidad dc
Descripció	fuente de intensidad dc ideal
Schematic entry	`Idc`
Netlist entry	`I`
Tipus	AnalogComponent
Bitmap file	dc_current
Propietats	1
Category	sources

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
I	1 mA	Si	intensidad en Amperios

Ac Voltage Source¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Fuente de tensión ac
Descripció	fuente de tensión ac ideal
Schematic entry	`Vac`
Netlist entry	`V`
Tipus	AnalogComponent
Bitmap file	ac_voltage
Propietats	4
Category	sources

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
U	1 V	Si	tensión de pico en Voltios
f	1 GHz	no	freqüència en Hertzios
Phase	0	no	fase inicial en grados
Theta	0	no	Factor de damping (sólo para simulación de transitorio)

Ac Current Source¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Fuente de intensidad ac
Descripció	fuente de intensidad ac ideal
Schematic entry	`Iac`
Netlist entry	`I`
Tipus	AnalogComponent
Bitmap file	ac_current
Propietats	4
Category	sources

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
I	1 mA	Si	corriente de pico en Amperios
f	1 GHz	no	freqüència en Hertzios
Phase	0	no	fase inicial en grados
Theta	0	no	Factor de damping (sólo para simulación de transitorio)

Fuente de Alimentación¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Fuente de Alimentación
Descripció	fuente de alimentación ac
Schematic entry	`Pac`
Netlist entry	`P`
Tipus	AnalogComponent
Bitmap file	source
Propietats	5
Category	sources

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Num	1	Si	número de la conexión
Z	50 Ohm	Si	impedancia de la conexión
P	0 dBm	no	(available) ac power in Watts
f	1 GHz	no	freqüència en Hertzios
Temp	26.85	no	temperatura de simulación en grados Celsius

Fuente de Tensión de Ruido¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Fuente de Tensión de Ruido
Descripció	fuente de tensión de ruido
Schematic entry	`Vnoise`
Netlist entry	`V`
Tipus	AnalogComponent
Bitmap file	noise_volt
Propietats	4
Category	sources

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
u	1e-6	Si	densitat espectral de potencia en V²/Hz
e	0	no	exponente de freqüència
c	1	no	coeficiente de freqüència
a	0	no	termino sumatorio de freqüència

Fuente de Intensidad de Ruido¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Fuente de Intensidad de Ruido
Descripció	fuente de intensidad de ruido
Schematic entry	`Inoise`
Netlist entry	`I`
Tipus	AnalogComponent
Bitmap file	noise_current
Propietats	4
Category	sources

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
i	1e-6	Si	densitat de potencia espectral actual en A^2/Hz
e	0	no	exponente de freqüència
c	1	no	coeficiente de freqüència
a	0	no	termino sumatorio de freqüència

Fuente de Corriente Controlada por Tensión¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Fuente de Corriente Controlada por Tensión
Descripció	Fuente de corriente controlada por tensión
Schematic entry	`VCCS`
Netlist entry	`SRC`
Tipus	AnalogComponent
Bitmap file	vccs
Propietats	2
Category	sources

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
G	1 S	Si	transconductancia directa
T	0	no	temps de retardo

Fuene de Intensidad Controlada por Intensidad¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Fuene de Intensidad Controlada por Intensidad
Descripció	fuente de intensidad controlada por intensidad
Schematic entry	`CCCS`
Netlist entry	`SRC`
Tipus	AnalogComponent
Bitmap file	cccs
Propietats	2
Category	sources

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
G	1	Si	factor de transferencia directa
T	0	no	temps de retardo

Fuente de Tensión Controlada por Tensión¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Fuente de Tensión Controlada por Tensión
Descripció	fuente de tensión controlada por tensión
Schematic entry	`VCVS`
Netlist entry	`SRC`
Tipus	AnalogComponent
Bitmap file	vcvs
Propietats	2
Category	sources

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
G	1	Si	factor de transferencia directa
T	0	no	temps de retardo

Fuente de Tensión Controlada por Intensidad¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Fuente de Tensión Controlada por Intensidad
Descripció	fuente de tensión controlada por intensidad
Schematic entry	`CCVS`
Netlist entry	`SRC`
Tipus	AnalogComponent
Bitmap file	ccvs
Propietats	2
Category	sources

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
G	1 Ohm	Si	factor de transferencia directa
T	0	no	temps de retardo

Pulso de Tensión¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Pulso de Tensión
Descripció	fuente ideal de pulsos de tensión
Schematic entry	`Vpulse`
Netlist entry	`V`
Tipus	AnalogComponent
Bitmap file	vpulse
Propietats	6
Category	sources

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
U1	0 V	Si	tensión antes y después del pulso
U2	1 V	Si	tensión del pulso
T1	0	Si	momento de inici del pulso
T2	1 ms	Si	temps de fin del pulso
Tr	1 ns	no	temps de ascenso del flanco de subida
Tf	1 ns	no	temps de caida del flanco de bajada

Pulso de Intensidad¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Pulso de Intensidad
Descripció	fuente ideal de pulsos de intensidad
Schematic entry	`Ipulse`
Netlist entry	`I`
Tipus	AnalogComponent
Bitmap file	ipulse
Propietats	6
Category	sources

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
I1	0	Si	intensidad antes y después del pulso
I2	1 A	Si	intensidad del pulso
T1	0	Si	momento de inici del pulso
T2	1 ms	Si	temps de fin del pulso
Tr	1 ns	no	temps de ascenso del flanco de subida
Tf	1 ns	no	temps de caida del flanco de bajada

Tensión Cuadrada¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Tensión Cuadrada
Descripció	fuente de tensión cuadrada ideal
Schematic entry	`Vrect`
Netlist entry	`V`
Tipus	AnalogComponent
Bitmap file	vrect
Propietats	6
Category	sources

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
U	1 V	Si	tensión de la señal superior
TH	1 ms	Si	duración de els pulsos superiores
TL	1 ms	Si	duración de els pulsos inferiores
Tr	1 ns	no	temps de ascenso del flanco de subida
Tf	1 ns	no	temps de caida del flanco de bajada
Td	0 ns	no	initial delay time

Corriente Cuadrada¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Corriente Cuadrada
Descripció	fuente de corriente cuadrada ideal
Schematic entry	`Irect`
Netlist entry	`I`
Tipus	AnalogComponent
Bitmap file	irect
Propietats	6
Category	sources

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
I	1 mA	Si	corriente en el pulso superior
TH	1 ms	Si	duración de els pulsos superiores
TL	1 ms	Si	duración de els pulsos inferiores
Tr	1 ns	no	temps de ascenso del flanco de subida
Tf	1 ns	no	temps de caida del flanco de bajada
Td	0 ns	no	initial delay time

Fuentes de Ruido correlacionadas¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Fuentes de Ruido correlacionadas
Descripció	fuentes de corriente correlacionadas
Schematic entry	`IInoise`
Netlist entry	`SRC`
Tipus	AnalogComponent
Bitmap file	noise_ii
Propietats	6
Category	sources

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
i1	1e-6	Si	densitat espectral del generador de corriente 1
i2	1e-6	Si	densitat espectral del generador de corriente 2
C	0.5	Si	coeficiente normalizado de correlación
e	0	no	exponente de freqüència
c	1	no	coeficiente de freqüència
a	0	no	termino sumatorio de freqüència

Fuentes de Ruido correlacionadas¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Fuentes de Ruido correlacionadas
Descripció	fuentes de corriente correlacionadas
Schematic entry	`VVnoise`
Netlist entry	`SRC`
Tipus	AnalogComponent
Bitmap file	noise_vv
Propietats	6
Category	sources

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
v1	1e-6	Si	densitat espectral de la fuente de tensión 1
v2	1e-6	Si	densitat espectral de la fuente de tensión 2
C	0.5	Si	coeficiente normalizado de correlación
e	0	no	exponente de freqüència
c	1	no	coeficiente de freqüència
a	0	no	termino sumatorio de freqüència

Fuentes de Ruido correlacionadas¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Fuentes de Ruido correlacionadas
Descripció	fuentes de corriente correlacionadas
Schematic entry	`IVnoise`
Netlist entry	`SRC`
Tipus	AnalogComponent
Bitmap file	noise_iv
Propietats	6
Category	sources

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
i1	1e-6	Si	densitat espectral del generador de corriente 1
v2	1e-6	Si	densitat espectral de la fuente de tensión 2
C	0.5	Si	coeficiente normalizado de correlación
e	0	no	exponente de freqüència
c	1	no	coeficiente de freqüència
a	0	no	termino sumatorio de freqüència

Am Modulated Source¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Fuente modulada AM
Descripció	fuente de tensión ac amb modulador de amplitud
Schematic entry	`AM_Mod`
Netlist entry	`V`
Tipus	AnalogComponent
Bitmap file	am_mod
Propietats	4
Category	sources

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
U	1 V	Si	tensión de pico en Voltios
f	1 GHz	no	freqüència en Hertzios
Phase	0	no	fase inicial en grados
m	1.0	no	nivel de modulación

Pm Modulated Source¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Fuente modulada PM
Descripció	fuente de tensión ac amb modulador de fase
Schematic entry	`PM_Mod`
Netlist entry	`V`
Tipus	AnalogComponent
Bitmap file	pm_mod
Propietats	4
Category	sources

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
U	1 V	Si	tensión de pico en Voltios
f	1 GHz	no	freqüència en Hertzios
Phase	0	no	fase inicial en grados
M	1.0	no	índice de modulación

Exponential Current Pulse¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Exponential Current Pulse
Descripció	exponential current source
Schematic entry	`Iexp`
Netlist entry	`I`
Tipus	AnalogComponent
Bitmap file	iexp
Propietats	6
Category	sources

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
I1	0	Si	current before rising edge
I2	1 A	Si	maximum current of the pulse
T1	0	Si	start time of the exponentially rising edge
T2	1 ms	Si	start of exponential decay
Tr	1 ns	no	time constant of the rising edge
Tf	1 ns	no	time constant of the falling edge

Exponential Voltage Pulse¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Exponential Voltage Pulse
Descripció	exponential voltage source
Schematic entry	`Vexp`
Netlist entry	`V`
Tipus	AnalogComponent
Bitmap file	vexp
Propietats	6
Category	sources

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
U1	0 V	Si	voltage before rising edge
U2	1 V	Si	maximum voltage of the pulse
T1	0	Si	start time of the exponentially rising edge
T2	1 ms	Si	start of exponential decay
Tr	1 ns	no	rise time of the rising edge
Tf	1 ns	no	fall time of the falling edge

File Based Voltage Source¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	File Based Voltage Source
Descripció	file based voltage source
Schematic entry	`Vfile`
Netlist entry	`V`
Tipus	AnalogComponent
Bitmap file	vfile
Propietats	5
Category	sources

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
File	vfile.dat	Si	name of the sample file
Interpolator	lineal	no	interpolation type [hold, linear, cubic]
Repeat	no	no	repeat waveform [no, yes]
G	1	no	ganancia de tensión
T	0	no	temps de retardo

File Based Current Source¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	File Based Current Source
Descripció	file based current source
Schematic entry	`Ifile`
Netlist entry	`I`
Tipus	AnalogComponent
Bitmap file	ifile
Propietats	5
Category	sources

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
File	ifile.dat	Si	name of the sample file
Interpolator	lineal	no	interpolation type [hold, linear, cubic]
Repeat	no	no	repeat waveform [no, yes]
G	1	no	current gain
T	0	no	temps de retardo

Probes¶

Sonda de Corriente¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Sonda de Corriente
Descripció	sonda de corriente
Schematic entry	`IProbe`
Netlist entry	`Pr`
Tipus	AnalogComponent
Bitmap file	iprobe
Propietats	0
Category	probes

Sonda de Tensión¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Sonda de Tensión
Descripció	sonda de tensión
Schematic entry	`VProbe`
Netlist entry	`Pr`
Tipus	AnalogComponent
Bitmap file	vprobe
Propietats	0
Category	probes

Transmission Lines¶

Línea de Transmisión¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Línea de Transmisión
Descripció	línea de transmisión ideal
Schematic entry	`TLIN`
Netlist entry	`Line`
Tipus	AnalogComponent
Bitmap file	tline
Propietats	4
Category	transmission lines

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Z	50 Ohm	Si	impedancia característica
L	1 mm	Si	longitud eléctrica de la línea
Alpha	0 dB	no	factor de atenuación por longitud en 1/m
Temp	26.85	no	temperatura de simulación en grados Celsius

4-Terminal Transmission Line¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	4-Terminal Transmission Line
Descripció	ideal 4-terminal transmission line
Schematic entry	`TLIN4P`
Netlist entry	`Line`
Tipus	AnalogComponent
Bitmap file	tline_4port
Propietats	4
Category	transmission lines

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Z	50 Ohm	Si	impedancia característica
L	1 mm	Si	longitud eléctrica de la línea
Alpha	0 dB	no	factor de atenuación por longitud en 1/m
Temp	26.85	no	temperatura de simulación en grados Celsius

Coupled Transmission Line¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Coupled Transmission Line
Descripció	coupled transmission lines
Schematic entry	`CTLIN`
Netlist entry	`Line`
Tipus	AnalogComponent
Bitmap file	ctline
Propietats	8
Category	transmission lines

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Ze	50 Ohm	Si	characteristic impedance of even mode
Zo	50 Ohm	Si	characteristic impedance of odd mode
L	1 mm	Si	longitud eléctrica de la línea
Ere	1	no	relative dielectric constant of even mode
Ero	1	no	relative dielectric constant of odd mode
Ae	0 dB	no	attenuation factor per length of even mode
Ao	0 dB	no	attenuation factor per length of odd mode
Temp	26.85	no	temperatura de simulación en grados Celsius

Twisted-Pair¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Twisted-Pair
Descripció	twisted pair transmission line
Schematic entry	`TWIST`
Netlist entry	`Line`
Tipus	AnalogComponent
Bitmap file	twistedpair
Propietats	9
Category	transmission lines

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
d	0.5 mm	Si	diameter of conductor
D	0.8 mm	Si	diameter of wire (conductor and insulator)
L	1.5	Si	physical length of the line
T	100	no	twists per length in 1/m
er	4	no	dielectric constant of insulator
mur	1	no	permeabilidad relativa del conductor
rho	0.022e-6	no	resistencia específica del conductor
tand	4e-4	no	tangente de perdidas
Temp	26.85	no	temperatura de simulación en grados Celsius

Línea coaxial¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Línea coaxial
Descripció	línea de transmisión coaxial
Schematic entry	`COAX`
Netlist entry	`Line`
Tipus	AnalogComponent
Bitmap file	coaxial
Propietats	8
Category	transmission lines

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
er	2.29	Si	permitividad relativa del dieléctrico
rho	0.022e-6	no	resistencia específica del conductor
mur	1	no	permeabilidad relativa del conductor
D	2.95 mm	no	diámetro interior de la pantalla
d	0.9 mm	no	diámetro del conductor interior
L	1500 mm	Si	longitud mecánica de la línea
tand	4e-4	no	tangente de perdidas
Temp	26.85	no	temperatura de simulación en grados Celsius

Guiaondas rectángular¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Guiaondas rectángular
Descripció	Guiaondas rectángular
Schematic entry	`RECTLINE`
Netlist entry	`Line`
Tipus	AnalogComponent
Bitmap file	rectline
Propietats	9
Category	transmission lines

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
a	2.95 mm	Si	widest side
b	0.9 mm	Si	shortest side
L	1500 mm	Si	longitud mecánica de la línea
er	1	no	permitividad relativa del dieléctrico
mur	1	no	permeabilidad relativa del conductor
tand	0	no	tangente de perdidas
rho	0.022e-6	no	resistencia específica del conductor
Temp	26.85	no	temperatura de simulación en grados Celsius
Material	unspecified	no	material parameter for temperature model [unspecified, Copper, StainlessSteel, Gold]

Rlcg Transmission Line¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	RLCG Transmission Line
Descripció	RLCG transmission line
Schematic entry	`RLCG`
Netlist entry	`Line`
Tipus	AnalogComponent
Bitmap file	rlcg
Propietats	6
Category	transmission lines

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
R	0.0	no	resistive load (Ohm/m)
L	0.6e-6	Si	inductive load (H/m)
C	240e-12	Si	capacitive load (F/m)
G	0.0	no	conductive load (S/m)
Longitud	1 mm	Si	longitud eléctrica de la línea
Temp	26.85	no	temperatura de simulación en grados Celsius

Sustrato¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Sustrato
Descripció	definición de sustrato
Schematic entry	`SUBST`
Netlist entry	`Subst`
Tipus	AnalogComponent
Bitmap file	sustrato
Propietats	6
Category	transmission lines

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
er	9.8	Si	permitividad relativa
h	1 mm	Si	grosor en metros
t	35 um	Si	grosor de metalización
tand	2e-4	Si	tangente de perdidas
rho	0.022e-6	Si	resistencia específica del metal
D	0.15e-6	Si	rudeza eficaz del sustrato

Línea Microstrip¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Línea Microstrip
Descripció	línea microstrip
Schematic entry	`MLIN`
Netlist entry	`MS`
Tipus	AnalogComponent
Bitmap file	msline
Propietats	6
Category	transmission lines

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Subst	Subst1	Si	nombre de la definición del sustrato
W	1 mm	Si	ancho de la línea
L	10 mm	Si	longitud de la línea
Model	Hammerstad	no	quasi-static microstrip model [Hammerstad, Wheeler, Schneider]
DispModel	Kirschning	no	microstrip dispersion model [Kirschning, Kobayashi, Yamashita, Hammerstad, Getsinger, Schneider, Pramanick]
Temp	26.85	no	temperatura de simulación en grados Celsius

Línea Microstrip Acoplada¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Línea Microstrip Acoplada
Descripció	línea microstrip acoplada
Schematic entry	`MCOUPLED`
Netlist entry	`MS`
Tipus	AnalogComponent
Bitmap file	mscoupled
Propietats	7
Category	transmission lines

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Subst	Subst1	Si	nombre de la definición del sustrato
W	1 mm	Si	ancho de la línea
L	10 mm	Si	longitud de la línea
S	1 mm	Si	espaciado entre les línees
Model	Kirschning	no	microstrip model [Kirschning, Hammerstad]
DispModel	Kirschning	no	microstrip dispersion model [Kirschning, Getsinger]
Temp	26.85	no	temperatura de simulación en grados Celsius

Microstrip Lange Coupler¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Microstrip Lange Coupler
Descripció	microstrip lange coupler
Schematic entry	`MLANGE`
Netlist entry	`MS`
Tipus	AnalogComponent
Bitmap file	mslange
Propietats	7
Category	transmission lines

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Subst	Subst1	Si	nombre de la definición del sustrato
W	1 mm	Si	ancho de la línea
L	10 mm	Si	longitud de la línea
S	1 mm	Si	espaciado entre les línees
Model	Kirschning	no	microstrip model [Kirschning, Hammerstad]
DispModel	Kirschning	no	microstrip dispersion model [Kirschning, Getsinger]
Temp	26.85	no	temperatura de simulación en grados Celsius

Esquina Microstrip¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Esquina Microstrip
Descripció	microstrip corner
Schematic entry	`MCORN`
Netlist entry	`MS`
Tipus	AnalogComponent
Bitmap file	mscorner
Propietats	2
Category	transmission lines

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Subst	Subst1	Si	sustrato
W	1 mm	Si	ancho de línea

Microstrip en Esquina Biselada¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Microstrip en Esquina Biselada
Descripció	microstrip en esquina biselada
Schematic entry	`MMBEND`
Netlist entry	`MS`
Tipus	AnalogComponent
Bitmap file	msmbend
Propietats	2
Category	transmission lines

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Subst	Subst1	Si	sustrato
W	1 mm	Si	ancho de línea

Paso Microstrip¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Paso Microstrip
Descripció	pas de impedancia microstrip
Schematic entry	`MSTEP`
Netlist entry	`MS`
Tipus	AnalogComponent
Bitmap file	msstep
Propietats	5
Category	transmission lines

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Subst	Subst1	Si	sustrato
W1	2 mm	Si	ancho 1 de la línea
W2	1 mm	Si	ancho 2 de la línea
MSModel	Hammerstad	no	quasi-static microstrip model [Hammerstad, Wheeler, Schneider]
MSDispModel	Kirschning	no	microstrip dispersion model [Kirschning, Kobayashi, Yamashita, Hammerstad, Getsinger, Schneider, Pramanick]

Punto de Partida Microstrip¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Punto de Partida Microstrip
Descripció	punt de partida microstrip
Schematic entry	`MTEE`
Netlist entry	`MS`
Tipus	AnalogComponent
Bitmap file	mstee
Propietats	8
Category	transmission lines

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Subst	Subst1	Si	sustrato
W1	1 mm	Si	ancho de la línea 1
W2	1 mm	Si	ancho de la línea 2
W3	2 mm	Si	ancho de la línea 3
MSModel	Hammerstad	no	quasi-static microstrip model [Hammerstad, Wheeler, Schneider]
MSDispModel	Kirschning	no	microstrip dispersion model [Kirschning, Kobayashi, Yamashita, Hammerstad, Getsinger, Schneider, Pramanick]
Temp	26.85	no	temperatura en grados Celsius
Symbol	showNumbers	no	show port numbers in symbol or not [showNumbers, noNumbers]

Cruce Microstrip¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Cruce Microstrip
Descripció	cruce microstrip
Schematic entry	`MCROSS`
Netlist entry	`MS`
Tipus	AnalogComponent
Bitmap file	mscross
Propietats	8
Category	transmission lines

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Subst	Subst1	Si	sustrato
W1	1 mm	Si	ancho de la línea 1
W2	2 mm	Si	ancho de la línea 2
W3	1 mm	Si	ancho de la línea 3
W4	2 mm	Si	ancho de la línea 4
MSModel	Hammerstad	no	quasi-static microstrip model [Hammerstad, Wheeler, Schneider]
MSDispModel	Kirschning	no	microstrip dispersion model [Kirschning, Kobayashi, Yamashita, Hammerstad, Getsinger, Schneider, Pramanick]
Symbol	showNumbers	no	show port numbers in symbol or not [showNumbers, noNumbers]

Apertura Microstrip¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Apertura Microstrip
Descripció	apertura microstrip
Schematic entry	`MOPEN`
Netlist entry	`MS`
Tipus	AnalogComponent
Bitmap file	msopen
Propietats	5
Category	transmission lines

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Subst	Subst1	Si	nombre de la definición del sustrato
W	1 mm	Si	ancho de la línea
MSModel	Hammerstad	no	quasi-static microstrip model [Hammerstad, Wheeler, Schneider]
MSDispModel	Kirschning	no	microstrip dispersion model [Kirschning, Kobayashi, Yamashita, Hammerstad, Getsinger, Schneider, Pramanick]
Model	Kirschning	no	microstrip open end model [Kirschning, Hammerstad, Alexopoulos]

Gap Microstrip¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Gap Microstrip
Descripció	gap microstrip
Schematic entry	`MGAP`
Netlist entry	`MS`
Tipus	AnalogComponent
Bitmap file	msgap
Propietats	6
Category	transmission lines

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Subst	Subst1	Si	nombre de la definición del sustrato
W1	1 mm	Si	ancho de la línea 1
W2	1 mm	Si	ancho de la línea 2
S	1 mm	Si	espacio entre els finales del microstrip
MSModel	Hammerstad	no	quasi-static microstrip model [Hammerstad, Wheeler, Schneider]
MSDispModel	Kirschning	no	microstrip dispersion model [Kirschning, Kobayashi, Yamashita, Hammerstad, Getsinger, Schneider, Pramanick]

Via Microstrip¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Via Microstrip
Descripció	via microstrip
Schematic entry	`MVIA`
Netlist entry	`MS`
Tipus	AnalogComponent
Bitmap file	msvia
Propietats	3
Category	transmission lines

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Subst	Subst1	Si	sustrato
D	1 mm	Si	díametro del conductor de vía redondeado
Temp	26.85	no	temperatura de simulación en grados Celsius

Microstrip Radial Stub¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Microstrip Radial Stub
Descripció	microstrip radial stub
Schematic entry	`MRSTUB`
Netlist entry	`MS`
Tipus	AnalogComponent
Bitmap file	msrstub
Propietats	4
Category	transmission lines

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Subst	Subst1	Si	nombre de la definición del sustrato
ri	1 mm	no	inner radius
ro	10 mm	Si	outer radius
alpha	90	Si	stub angle (degrees)

Línea Coplanar¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Línea Coplanar
Descripció	línea coplanar
Schematic entry	`CLIN`
Netlist entry	`CL`
Tipus	AnalogComponent
Bitmap file	coplanar
Propietats	6
Category	transmission lines

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Subst	Subst1	Si	nombre de la definición del sustrato
W	1 mm	Si	ancho de la línea
S	1 mm	Si	ancho del gap
L	10 mm	Si	longitud de la línea
Backside	Air	no	material at the backside of the substrate [Metal, Air]
Approx	Si	no	use approximation instead of precise equation [yes, no]

Coplanar Abierto¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Coplanar Abierto
Descripció	coplanar abierto
Schematic entry	`COPEN`
Netlist entry	`CL`
Tipus	AnalogComponent
Bitmap file	cpwopen
Propietats	5
Category	transmission lines

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Subst	Subst1	Si	nombre de la definición del sustrato
W	1 mm	Si	ancho de la línea
S	1 mm	Si	ancho del gap
G	5 mm	Si	ancho del gap al final de la línea
Backside	Air	no	material at the backside of the substrate [Metal, Air]

Coplanar Corto¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Coplanar Corto
Descripció	coplanar corto
Schematic entry	`CSHORT`
Netlist entry	`CL`
Tipus	AnalogComponent
Bitmap file	cpwshort
Propietats	4
Category	transmission lines

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Subst	Subst1	Si	nombre de la definición del sustrato
W	1 mm	Si	ancho de la línea
S	1 mm	Si	ancho del gap
Backside	Air	no	material at the backside of the substrate [Metal, Air]

Gap Coplanar¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Gap Coplanar
Descripció	gap coplanar
Schematic entry	`CGAP`
Netlist entry	`CL`
Tipus	AnalogComponent
Bitmap file	cpwgap
Propietats	4
Category	transmission lines

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Subst	Subst1	Si	nombre de la definición del sustrato
W	1 mm	Si	ancho de la línea
S	1 mm	Si	ancho del gap
G	0.5 mm	Si	ancho del gap entre les dos línees

Paso Coplanar¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Paso Coplanar
Descripció	pas coplanar
Schematic entry	`CSTEP`
Netlist entry	`CL`
Tipus	AnalogComponent
Bitmap file	cpwstep
Propietats	5
Category	transmission lines

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Subst	Subst1	Si	nombre de la definición del sustrato
W1	1 mm	Si	ancho de la línea 1
W2	2 mm	Si	ancho de la línea 2
S	3 mm	Si	distancia entre planos de tierra
Backside	Air	no	material at the backside of the substrate [Metal, Air]

Bond Wire¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Bond Wire
Descripció	bond wire
Schematic entry	`BOND`
Netlist entry	`Line`
Tipus	AnalogComponent
Bitmap file	bondwire
Propietats	8
Category	transmission lines

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
L	3 mm	Si	length of the wire
D	50 um	Si	diameter of the wire
H	2 mm	Si	height above ground plane
rho	0.022e-6	no	specific resistance of the metal
mur	1	no	relative permeability of the metal
Model	FREESPACE	no	bond wire model [FREESPACE, MIRROR, DESCHARLES]
Subst	Subst1	Si	sustrato
Temp	26.85	no	temperatura de simulación en grados Celsius

Nonlinear Components¶

Diodo¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Diodo
Descripció	diodo
Schematic entry	`Diode`
Netlist entry	`D`
Tipus	AnalogComponent
Bitmap file	diodo
Propietats	29
Category	nonlinear components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Is	1e-15 A	Si	corriente de saturación
N	1	Si	coeficiente de emisión
Cj0	10 fF	Si	capacidad de polarización de la unión
M	0.5	no	coeficiente de graduación
Vj	0.7 V	no	potencial de la unión
Fc	0.5	no	coeficiente de pérdida de capacidad en polarización directa
Cp	0.0 fF	no	capacidad lineal
Isr	0.0	no	parámetro de recombinación de la corriente
Nr	2.0	no	coeficiente de emisión para lsr
Rs	0.0 Ohm	no	resistencia serie en óhmios
Tt	0.0 ps	no	temps de tránsito
Ikf	0	no	high-injection knee current (0=infinity)
Kf	0.0	no	coeficiente de ruido térmico
Af	1.0	no	exponente de ruido térmico
Ffe	1.0	no	exponente de freqüència de ruido térmico
Bv	0	no	tensión de ruptura inversa
Ibv	1 mA	no	corriente en la tensión de ruptura inversa
Temp	26.85	no	temperatura de simulación en grados Celsius
Xti	3.0	no	exponente de temperatura de la corriente de saturación
Eg	1.11	no	Amplada del salto de energía en eV
Tbv	0.0	no	coeficiente de temperatura lineal Bv
Trs	0.0	no	coeficiente de temperatura lineal Rs
Ttt1	0.0	no	coeficiente de temperatura lineal Tt
Ttt2	0.0	no	coeficiente de temperatura cuadrático Tt
Tm1	0.0	no	coeficiente de temperatura lineal M
Tm2	0.0	no	coeficiente de temperatura cuadrático M
Tnom	26.85	no	temperatura a la que se extraen els parámetros
Area	1.0	no	area predeterminada para el diodo
Symbol	normal	no	schematic symbol [normal, US, Schottky, Zener, Varactor]

Npn Transistor¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	transitor npn
Descripció	transistor de unión bipolar
Schematic entry	`_BJT`
Netlist entry	`T`
Tipus	AnalogComponent
Bitmap file	npn
Propietats	48
Category	nonlinear components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Tipus	npn	Si	polarity [npn, pnp]
Is	1e-16	Si	corriente de saturación
Nf	1	Si	coeficiente de emisión directa
Nr	1	no	coeficiente de emisión inversa
Ikf	0	no	pico de corriente elevada para beta directa
Ikr	0	no	pico de corriente elevada para beta inversa
Vaf	0	Si	tensión temprana directa
Var	0	no	tensión temprana inversa
Ise	0	no	intensidad de saturación base-emisor
Ne	1.5	no	coeficiente de emisión de fugas base-emisor
Isc	0	no	intensidad de saturación base-colector
Nc	2	no	coeficiente de emisión de fugas base-colector
Bf	100	Si	ganancia (beta) directa
Br	1	no	ganancia (beta) inversa
Rbm	0	no	resistencia mínima de la base amb corrientes altas
Irb	0	no	corriente en la base para punt de resistencia media
Rc	0	no	resistencia óhmica del colector
Re	0	no	resistencia óhmica del emisor
Rb	0	no	resistencia de polarización de la base (puede depender de les corrientes altas)
Cje	0	no	capacidad de pérdidas en la polarización base-emisor
Vje	0.75	no	potencial de la unión base-emisor
Mje	0.33	no	factor exponencial de la unión base-emisor
Cjc	0	no	capacidad de pérdidas en la polarización base-colector
Vjc	0.75	no	potencial de la unión base-colector
Mjc	0.33	no	factor exponencial de la unión base colector
Xcjc	1.0	no	fracción de Cjc que va al conector interno de la base
Cjs	0	no	capacidad de la polarización colector-sustrato
Vjs	0.75	no	potencial interno de la unión-sustrato
Mjs	0	no	factor exponencial unión-sustrato
Fc	0.5	no	coeficiente de pérdida de capacidad en polarización directa
Tf	0.0	no	temps ideal de tránsito en directa
Xtf	0.0	no	coeficiente de dependencia de la polarización para Tf (Tiempo de tránsito base polar directa)
Vtf	0.0	no	dependencia de tensión de Tf en la tensión base-colector
Itf	0.0	no	efecto de les corrientes altas en Tf (Tiempo de tránsito base polar directa)
Tr	0.0	no	temps de tránsito ideal en inversa
Temp	26.85	no	temperatura de simulación en grados Celsius
Kf	0.0	no	coeficiente de ruido térmico
Af	1.0	no	exponente de ruido térmico
Ffe	1.0	no	exponente de freqüència de ruido térmico
Kb	0.0	no	coeficiente de ruido a ráfagas
Ab	1.0	no	exponente de ruido a ráfagas
Fb	1.0	no	freqüència de esquina del ruido a ráfagas en Hertzios
Ptf	0.0	no	exceso de fase en grados
Xtb	0.0	no	exponente de temperatura para la beta inversa y directa
Xti	3.0	no	exponente de temperatura de la corriente de saturación
Eg	1.11	no	Amplada del salto de energía en eV
Tnom	26.85	no	temperatura a la que se extraen els parámetros
Area	1.0	no	area predeterminada para el transistor bipolar

Pnp Transistor¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	transistor pnp
Descripció	transistor de unión bipolar
Schematic entry	`_BJT`
Netlist entry	`T`
Tipus	AnalogComponent
Bitmap file	pnp
Propietats	48
Category	nonlinear components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Tipus	pnp	Si	polarity [npn, pnp]
Is	1e-16	Si	corriente de saturación
Nf	1	Si	coeficiente de emisión directa
Nr	1	no	coeficiente de emisión inversa
Ikf	0	no	pico de corriente elevada para beta directa
Ikr	0	no	pico de corriente elevada para beta inversa
Vaf	0	Si	tensión temprana directa
Var	0	no	tensión temprana inversa
Ise	0	no	intensidad de saturación base-emisor
Ne	1.5	no	coeficiente de emisión de fugas base-emisor
Isc	0	no	intensidad de saturación base-colector
Nc	2	no	coeficiente de emisión de fugas base-colector
Bf	100	Si	ganancia (beta) directa
Br	1	no	ganancia (beta) inversa
Rbm	0	no	resistencia mínima de la base amb corrientes altas
Irb	0	no	corriente en la base para punt de resistencia media
Rc	0	no	resistencia óhmica del colector
Re	0	no	resistencia óhmica del emisor
Rb	0	no	resistencia de polarización de la base (puede depender de les corrientes altas)
Cje	0	no	capacidad de pérdidas en la polarización base-emisor
Vje	0.75	no	potencial de la unión base-emisor
Mje	0.33	no	factor exponencial de la unión base-emisor
Cjc	0	no	capacidad de pérdidas en la polarización base-colector
Vjc	0.75	no	potencial de la unión base-colector
Mjc	0.33	no	factor exponencial de la unión base colector
Xcjc	1.0	no	fracción de Cjc que va al conector interno de la base
Cjs	0	no	capacidad de la polarización colector-sustrato
Vjs	0.75	no	potencial interno de la unión-sustrato
Mjs	0	no	factor exponencial unión-sustrato
Fc	0.5	no	coeficiente de pérdida de capacidad en polarización directa
Tf	0.0	no	temps ideal de tránsito en directa
Xtf	0.0	no	coeficiente de dependencia de la polarización para Tf (Tiempo de tránsito base polar directa)
Vtf	0.0	no	dependencia de tensión de Tf en la tensión base-colector
Itf	0.0	no	efecto de les corrientes altas en Tf (Tiempo de tránsito base polar directa)
Tr	0.0	no	temps de tránsito ideal en inversa
Temp	26.85	no	temperatura de simulación en grados Celsius
Kf	0.0	no	coeficiente de ruido térmico
Af	1.0	no	exponente de ruido térmico
Ffe	1.0	no	exponente de freqüència de ruido térmico
Kb	0.0	no	coeficiente de ruido a ráfagas
Ab	1.0	no	exponente de ruido a ráfagas
Fb	1.0	no	freqüència de esquina del ruido a ráfagas en Hertzios
Ptf	0.0	no	exceso de fase en grados
Xtb	0.0	no	exponente de temperatura para la beta inversa y directa
Xti	3.0	no	exponente de temperatura de la corriente de saturación
Eg	1.11	no	Amplada del salto de energía en eV
Tnom	26.85	no	temperatura a la que se extraen els parámetros
Area	1.0	no	area predeterminada para el transistor bipolar

Npn Transistor¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	transitor npn
Descripció	transistor de unión bipolar amb substrato
Schematic entry	`BJT`
Netlist entry	`T`
Tipus	AnalogComponent
Bitmap file	npnsub
Propietats	48
Category	nonlinear components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Tipus	npn	Si	polarity [npn, pnp]
Is	1e-16	Si	corriente de saturación
Nf	1	Si	coeficiente de emisión directa
Nr	1	no	coeficiente de emisión inversa
Ikf	0	no	pico de corriente elevada para beta directa
Ikr	0	no	pico de corriente elevada para beta inversa
Vaf	0	Si	tensión temprana directa
Var	0	no	tensión temprana inversa
Ise	0	no	intensidad de saturación base-emisor
Ne	1.5	no	coeficiente de emisión de fugas base-emisor
Isc	0	no	intensidad de saturación base-colector
Nc	2	no	coeficiente de emisión de fugas base-colector
Bf	100	Si	ganancia (beta) directa
Br	1	no	ganancia (beta) inversa
Rbm	0	no	resistencia mínima de la base amb corrientes altas
Irb	0	no	corriente en la base para punt de resistencia media
Rc	0	no	resistencia óhmica del colector
Re	0	no	resistencia óhmica del emisor
Rb	0	no	resistencia de polarización de la base (puede depender de les corrientes altas)
Cje	0	no	capacidad de pérdidas en la polarización base-emisor
Vje	0.75	no	potencial de la unión base-emisor
Mje	0.33	no	factor exponencial de la unión base-emisor
Cjc	0	no	capacidad de pérdidas en la polarización base-colector
Vjc	0.75	no	potencial de la unión base-colector
Mjc	0.33	no	factor exponencial de la unión base colector
Xcjc	1.0	no	fracción de Cjc que va al conector interno de la base
Cjs	0	no	capacidad de la polarización colector-sustrato
Vjs	0.75	no	potencial interno de la unión-sustrato
Mjs	0	no	factor exponencial unión-sustrato
Fc	0.5	no	coeficiente de pérdida de capacidad en polarización directa
Tf	0.0	no	temps ideal de tránsito en directa
Xtf	0.0	no	coeficiente de dependencia de la polarización para Tf (Tiempo de tránsito base polar directa)
Vtf	0.0	no	dependencia de tensión de Tf en la tensión base-colector
Itf	0.0	no	efecto de les corrientes altas en Tf (Tiempo de tránsito base polar directa)
Tr	0.0	no	temps de tránsito ideal en inversa
Temp	26.85	no	temperatura de simulación en grados Celsius
Kf	0.0	no	coeficiente de ruido térmico
Af	1.0	no	exponente de ruido térmico
Ffe	1.0	no	exponente de freqüència de ruido térmico
Kb	0.0	no	coeficiente de ruido a ráfagas
Ab	1.0	no	exponente de ruido a ráfagas
Fb	1.0	no	freqüència de esquina del ruido a ráfagas en Hertzios
Ptf	0.0	no	exceso de fase en grados
Xtb	0.0	no	exponente de temperatura para la beta inversa y directa
Xti	3.0	no	exponente de temperatura de la corriente de saturación
Eg	1.11	no	Amplada del salto de energía en eV
Tnom	26.85	no	temperatura a la que se extraen els parámetros
Area	1.0	no	area predeterminada para el transistor bipolar

Pnp Transistor¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	transistor pnp
Descripció	transistor de unión bipolar amb substrato
Schematic entry	`BJT`
Netlist entry	`T`
Tipus	AnalogComponent
Bitmap file	pnpsub
Propietats	48
Category	nonlinear components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Tipus	pnp	Si	polarity [npn, pnp]
Is	1e-16	Si	corriente de saturación
Nf	1	Si	coeficiente de emisión directa
Nr	1	no	coeficiente de emisión inversa
Ikf	0	no	pico de corriente elevada para beta directa
Ikr	0	no	pico de corriente elevada para beta inversa
Vaf	0	Si	tensión temprana directa
Var	0	no	tensión temprana inversa
Ise	0	no	intensidad de saturación base-emisor
Ne	1.5	no	coeficiente de emisión de fugas base-emisor
Isc	0	no	intensidad de saturación base-colector
Nc	2	no	coeficiente de emisión de fugas base-colector
Bf	100	Si	ganancia (beta) directa
Br	1	no	ganancia (beta) inversa
Rbm	0	no	resistencia mínima de la base amb corrientes altas
Irb	0	no	corriente en la base para punt de resistencia media
Rc	0	no	resistencia óhmica del colector
Re	0	no	resistencia óhmica del emisor
Rb	0	no	resistencia de polarización de la base (puede depender de les corrientes altas)
Cje	0	no	capacidad de pérdidas en la polarización base-emisor
Vje	0.75	no	potencial de la unión base-emisor
Mje	0.33	no	factor exponencial de la unión base-emisor
Cjc	0	no	capacidad de pérdidas en la polarización base-colector
Vjc	0.75	no	potencial de la unión base-colector
Mjc	0.33	no	factor exponencial de la unión base colector
Xcjc	1.0	no	fracción de Cjc que va al conector interno de la base
Cjs	0	no	capacidad de la polarización colector-sustrato
Vjs	0.75	no	potencial interno de la unión-sustrato
Mjs	0	no	factor exponencial unión-sustrato
Fc	0.5	no	coeficiente de pérdida de capacidad en polarización directa
Tf	0.0	no	temps ideal de tránsito en directa
Xtf	0.0	no	coeficiente de dependencia de la polarización para Tf (Tiempo de tránsito base polar directa)
Vtf	0.0	no	dependencia de tensión de Tf en la tensión base-colector
Itf	0.0	no	efecto de les corrientes altas en Tf (Tiempo de tránsito base polar directa)
Tr	0.0	no	temps de tránsito ideal en inversa
Temp	26.85	no	temperatura de simulación en grados Celsius
Kf	0.0	no	coeficiente de ruido térmico
Af	1.0	no	exponente de ruido térmico
Ffe	1.0	no	exponente de freqüència de ruido térmico
Kb	0.0	no	coeficiente de ruido a ráfagas
Ab	1.0	no	exponente de ruido a ráfagas
Fb	1.0	no	freqüència de esquina del ruido a ráfagas en Hertzios
Ptf	0.0	no	exceso de fase en grados
Xtb	0.0	no	exponente de temperatura para la beta inversa y directa
Xti	3.0	no	exponente de temperatura de la corriente de saturación
Eg	1.11	no	Amplada del salto de energía en eV
Tnom	26.85	no	temperatura a la que se extraen els parámetros
Area	1.0	no	area predeterminada para el transistor bipolar

N-Jfet¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	JFET-n
Descripció	transistor de unión de efecto de campo
Schematic entry	`JFET`
Netlist entry	`T`
Tipus	AnalogComponent
Bitmap file	nfet
Propietats	24
Category	nonlinear components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Tipus	nfet	Si	polarity [nfet, pfet]
Vt0	-2.0 V	Si	tensión umbral
Beta	1e-4	Si	parámetro de transconductancia
Lambda	0.0	Si	parámetro de modulación de la longitud del canal
Rd	0.0	no	resistencia de drenador parásita
Rs	0.0	no	resistencia de surtidor parásita
Is	1e-14	no	corriente de saturación de la puerta
N	1.0	no	coeficente de emisión de la puerta
Isr	1e-14	no	parámetro de corriente de recombinación de la puerta
Nr	2.0	no	coeficiente de emisión lsr
Cgs	0.0	no	capacidad de la polarización puerta-surtidor
Cgd	0.0	no	capacidad de la polarización puerta-drenador
Pb	1.0	no	potencial de la puerta
Fc	0.5	no	coeficiente de polarizacación directa de la unión
M	0.5	no	coeficiente de graduación P-N
Kf	0.0	no	coeficiente de ruido térmico
Af	1.0	no	exponente de ruido térmico
Ffe	1.0	no	exponente de freqüència de ruido térmico
Temp	26.85	no	temperatura de simulación en grados Celsius
Xti	3.0	no	exponente de temperatura de la corriente de saturación
Vt0tc	0.0	no	coeficiente de temperatura Vt0
Betatce	0.0	no	coeficiente de temperatura exponencial Beta
Tnom	26.85	no	temperatura a la que se extraen els parámetros
Area	1.0	no	area predeterminada para JFET

P-Jfet¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	JFET-p
Descripció	transistor de unión de efecto de campo
Schematic entry	`JFET`
Netlist entry	`T`
Tipus	AnalogComponent
Bitmap file	pfet
Propietats	24
Category	nonlinear components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Tipus	pfet	Si	polarity [nfet, pfet]
Vt0	-2.0 V	Si	tensión umbral
Beta	1e-4	Si	parámetro de transconductancia
Lambda	0.0	Si	parámetro de modulación de la longitud del canal
Rd	0.0	no	resistencia de drenador parásita
Rs	0.0	no	resistencia de surtidor parásita
Is	1e-14	no	corriente de saturación de la puerta
N	1.0	no	coeficente de emisión de la puerta
Isr	1e-14	no	parámetro de corriente de recombinación de la puerta
Nr	2.0	no	coeficiente de emisión lsr
Cgs	0.0	no	capacidad de la polarización puerta-surtidor
Cgd	0.0	no	capacidad de la polarización puerta-drenador
Pb	1.0	no	potencial de la puerta
Fc	0.5	no	coeficiente de polarizacación directa de la unión
M	0.5	no	coeficiente de graduación P-N
Kf	0.0	no	coeficiente de ruido térmico
Af	1.0	no	exponente de ruido térmico
Ffe	1.0	no	exponente de freqüència de ruido térmico
Temp	26.85	no	temperatura de simulación en grados Celsius
Xti	3.0	no	exponente de temperatura de la corriente de saturación
Vt0tc	0.0	no	coeficiente de temperatura Vt0
Betatce	0.0	no	coeficiente de temperatura exponencial Beta
Tnom	26.85	no	temperatura a la que se extraen els parámetros
Area	1.0	no	area predeterminada para JFET

N-Mosfet¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	MOSFET-n
Descripció	transistor de efecto de campo MOS
Schematic entry	`_MOSFET`
Netlist entry	`T`
Tipus	AnalogComponent
Bitmap file	nmosfet
Propietats	44
Category	nonlinear components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Tipus	nfet	no	polarity [nfet, pfet]
Vt0	1.0 V	Si	tensión umbral de polarización
Kp	2e-5	Si	coeficiente de transconductancia en A/V^2
Gamma	0.0	no	sustrato umbral en raiz cuadrada de V
Phi	0.6 V	no	potencial de la superficie
Lambda	0.0	Si	parámetro de modulación de la longitud del canal en 1/V
Rd	0.0 Ohm	no	resistencia del drenador
Rs	0.0 Ohm	no	resistencia del surtidor
Rg	0.0 Ohm	no	resistencia de la puerta
Is	1e-14 A	no	corriente de saturación unión-sustrato
N	1.0	no	coeficiente de emisión de la unión del sustrato
W	1 um	no	ancho del canal
L	1 um	no	longitud del canal
Ld	0.0	no	longitud de difusión lateral
Tox	0.1 um	no	grosor del óxido
Cgso	0.0	no	capacidad sobrepuesta de la puerta-surtidor por metro de la anchura del canal en F/m
Cgdo	0.0	no	capacidad sobrepuesta de la puerta-drenador por metro de la anchura del canal en F/m
Cgbo	0.0	no	capacidad sobrepuesta puerta-sustrato por metro de longitud del canal en F/m
Cbd	0.0 F	no	capacidad de la polarización de la unión sustrato-drenador
Cbs	0.0 F	no	capacidad de la polarización de la unión sustrato-surtidor
Pb	0.8 V	no	potencial unión-sustrato
Mj	0.5	no	Parámetero de difusión del substrato
Fc	0.5	no	bulk junction forward-bias depletion capacitance coefficient
Cjsw	0.0	no	zero-bias bulk junction periphery capacitance per meter of junction perimeter in F/m
Mjsw	0.33	no	bulk junction periphery grading coefficient
Tt	0.0 ps	no	temps de tránsito del sustrato
Nsub	0.0	no	substrate bulk doping density in 1/cm^3
Nss	0.0	no	densitat del estado de la superficie en 1/cm²
Tpg	1	no	tipo de material de la puerta: 0 = aluminio; -1=igual que el sustrato; 1=contrario al sustrato
Uo	600.0	no	movilidad de la superficie en cm²/Vs
Rsh	0.0	no	hoja de difusión del surtidor y drenador amb la resistencia en Ohms/cuadrado
Nrd	1	no	número de cuadrados de drenador equivalentes
Nrs	1	no	número de cuadrados de surtidor equivalentes
Cj	0.0	no	capaicidad de la polarización de la unión inferior del sustrato por metro cuadrado de área de unión en F/m²
Js	0.0	no	corriente de saturación del sustrato por metro cuadrado del área de la unión en A/m²
Ad	0.0	no	área de difusión del drenador en m²
As	0.0	no	área de difusión del surtidor en m²
Pd	0.0 m	no	perímetro de la unión del drenador
Ps	0.0 m	no	perímetro de la unión del surtidor
Kf	0.0	no	coeficiente de ruido térmico
Af	1.0	no	exponente de ruido térmico
Ffe	1.0	no	exponente de freqüència de ruido térmico
Temp	26.85	no	temperatura de simulación en grados Celsius
Tnom	26.85	no	temperatura de medida del parámetro

P-Mosfet¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	MOSFET-p
Descripció	transistor de efecto de campo MOS
Schematic entry	`_MOSFET`
Netlist entry	`T`
Tipus	AnalogComponent
Bitmap file	pmosfet
Propietats	44
Category	nonlinear components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Tipus	pfet	no	polarity [nfet, pfet]
Vt0	-1.0 V	Si	tensión umbral de polarización
Kp	2e-5	Si	coeficiente de transconductancia en A/V^2
Gamma	0.0	no	sustrato umbral en raiz cuadrada de V
Phi	0.6 V	no	potencial de la superficie
Lambda	0.0	Si	parámetro de modulación de la longitud del canal en 1/V
Rd	0.0 Ohm	no	resistencia del drenador
Rs	0.0 Ohm	no	resistencia del surtidor
Rg	0.0 Ohm	no	resistencia de la puerta
Is	1e-14 A	no	corriente de saturación unión-sustrato
N	1.0	no	coeficiente de emisión de la unión del sustrato
W	1 um	no	ancho del canal
L	1 um	no	longitud del canal
Ld	0.0	no	longitud de difusión lateral
Tox	0.1 um	no	grosor del óxido
Cgso	0.0	no	capacidad sobrepuesta de la puerta-surtidor por metro de la anchura del canal en F/m
Cgdo	0.0	no	capacidad sobrepuesta de la puerta-drenador por metro de la anchura del canal en F/m
Cgbo	0.0	no	capacidad sobrepuesta puerta-sustrato por metro de longitud del canal en F/m
Cbd	0.0 F	no	capacidad de la polarización de la unión sustrato-drenador
Cbs	0.0 F	no	capacidad de la polarización de la unión sustrato-surtidor
Pb	0.8 V	no	potencial unión-sustrato
Mj	0.5	no	Parámetero de difusión del substrato
Fc	0.5	no	bulk junction forward-bias depletion capacitance coefficient
Cjsw	0.0	no	zero-bias bulk junction periphery capacitance per meter of junction perimeter in F/m
Mjsw	0.33	no	bulk junction periphery grading coefficient
Tt	0.0 ps	no	temps de tránsito del sustrato
Nsub	0.0	no	substrate bulk doping density in 1/cm^3
Nss	0.0	no	densitat del estado de la superficie en 1/cm²
Tpg	1	no	tipo de material de la puerta: 0 = aluminio; -1=igual que el sustrato; 1=contrario al sustrato
Uo	600.0	no	movilidad de la superficie en cm²/Vs
Rsh	0.0	no	hoja de difusión del surtidor y drenador amb la resistencia en Ohms/cuadrado
Nrd	1	no	número de cuadrados de drenador equivalentes
Nrs	1	no	número de cuadrados de surtidor equivalentes
Cj	0.0	no	capaicidad de la polarización de la unión inferior del sustrato por metro cuadrado de área de unión en F/m²
Js	0.0	no	corriente de saturación del sustrato por metro cuadrado del área de la unión en A/m²
Ad	0.0	no	área de difusión del drenador en m²
As	0.0	no	área de difusión del surtidor en m²
Pd	0.0 m	no	perímetro de la unión del drenador
Ps	0.0 m	no	perímetro de la unión del surtidor
Kf	0.0	no	coeficiente de ruido térmico
Af	1.0	no	exponente de ruido térmico
Ffe	1.0	no	exponente de freqüència de ruido térmico
Temp	26.85	no	temperatura de simulación en grados Celsius
Tnom	26.85	no	temperatura de medida del parámetro

Depletion Mosfet¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	depletion MOSFET
Descripció	transistor de efecto de campo MOS
Schematic entry	`_MOSFET`
Netlist entry	`T`
Tipus	AnalogComponent
Bitmap file	dmosfet
Propietats	44
Category	nonlinear components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Tipus	nfet	no	polarity [nfet, pfet]
Vt0	-1.0 V	Si	tensión umbral de polarización
Kp	2e-5	Si	coeficiente de transconductancia en A/V^2
Gamma	0.0	no	sustrato umbral en raiz cuadrada de V
Phi	0.6 V	no	potencial de la superficie
Lambda	0.0	Si	parámetro de modulación de la longitud del canal en 1/V
Rd	0.0 Ohm	no	resistencia del drenador
Rs	0.0 Ohm	no	resistencia del surtidor
Rg	0.0 Ohm	no	resistencia de la puerta
Is	1e-14 A	no	corriente de saturación unión-sustrato
N	1.0	no	coeficiente de emisión de la unión del sustrato
W	1 um	no	ancho del canal
L	1 um	no	longitud del canal
Ld	0.0	no	longitud de difusión lateral
Tox	0.1 um	no	grosor del óxido
Cgso	0.0	no	capacidad sobrepuesta de la puerta-surtidor por metro de la anchura del canal en F/m
Cgdo	0.0	no	capacidad sobrepuesta de la puerta-drenador por metro de la anchura del canal en F/m
Cgbo	0.0	no	capacidad sobrepuesta puerta-sustrato por metro de longitud del canal en F/m
Cbd	0.0 F	no	capacidad de la polarización de la unión sustrato-drenador
Cbs	0.0 F	no	capacidad de la polarización de la unión sustrato-surtidor
Pb	0.8 V	no	potencial unión-sustrato
Mj	0.5	no	Parámetero de difusión del substrato
Fc	0.5	no	bulk junction forward-bias depletion capacitance coefficient
Cjsw	0.0	no	zero-bias bulk junction periphery capacitance per meter of junction perimeter in F/m
Mjsw	0.33	no	bulk junction periphery grading coefficient
Tt	0.0 ps	no	temps de tránsito del sustrato
Nsub	0.0	no	substrate bulk doping density in 1/cm^3
Nss	0.0	no	densitat del estado de la superficie en 1/cm²
Tpg	1	no	tipo de material de la puerta: 0 = aluminio; -1=igual que el sustrato; 1=contrario al sustrato
Uo	600.0	no	movilidad de la superficie en cm²/Vs
Rsh	0.0	no	hoja de difusión del surtidor y drenador amb la resistencia en Ohms/cuadrado
Nrd	1	no	número de cuadrados de drenador equivalentes
Nrs	1	no	número de cuadrados de surtidor equivalentes
Cj	0.0	no	capaicidad de la polarización de la unión inferior del sustrato por metro cuadrado de área de unión en F/m²
Js	0.0	no	corriente de saturación del sustrato por metro cuadrado del área de la unión en A/m²
Ad	0.0	no	área de difusión del drenador en m²
As	0.0	no	área de difusión del surtidor en m²
Pd	0.0 m	no	perímetro de la unión del drenador
Ps	0.0 m	no	perímetro de la unión del surtidor
Kf	0.0	no	coeficiente de ruido térmico
Af	1.0	no	exponente de ruido térmico
Ffe	1.0	no	exponente de freqüència de ruido térmico
Temp	26.85	no	temperatura de simulación en grados Celsius
Tnom	26.85	no	temperatura de medida del parámetro

N-Mosfet¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	MOSFET-n
Descripció	MOS field-effect transistor with substrate
Schematic entry	`MOSFET`
Netlist entry	`T`
Tipus	AnalogComponent
Bitmap file	nmosfet_sub
Propietats	44
Category	nonlinear components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Tipus	nfet	no	polarity [nfet, pfet]
Vt0	1.0 V	Si	tensión umbral de polarización
Kp	2e-5	Si	coeficiente de transconductancia en A/V^2
Gamma	0.0	no	sustrato umbral en raiz cuadrada de V
Phi	0.6 V	no	potencial de la superficie
Lambda	0.0	Si	parámetro de modulación de la longitud del canal en 1/V
Rd	0.0 Ohm	no	resistencia del drenador
Rs	0.0 Ohm	no	resistencia del surtidor
Rg	0.0 Ohm	no	resistencia de la puerta
Is	1e-14 A	no	corriente de saturación unión-sustrato
N	1.0	no	coeficiente de emisión de la unión del sustrato
W	1 um	no	ancho del canal
L	1 um	no	longitud del canal
Ld	0.0	no	longitud de difusión lateral
Tox	0.1 um	no	grosor del óxido
Cgso	0.0	no	capacidad sobrepuesta de la puerta-surtidor por metro de la anchura del canal en F/m
Cgdo	0.0	no	capacidad sobrepuesta de la puerta-drenador por metro de la anchura del canal en F/m
Cgbo	0.0	no	capacidad sobrepuesta puerta-sustrato por metro de longitud del canal en F/m
Cbd	0.0 F	no	capacidad de la polarización de la unión sustrato-drenador
Cbs	0.0 F	no	capacidad de la polarización de la unión sustrato-surtidor
Pb	0.8 V	no	potencial unión-sustrato
Mj	0.5	no	Parámetero de difusión del substrato
Fc	0.5	no	bulk junction forward-bias depletion capacitance coefficient
Cjsw	0.0	no	zero-bias bulk junction periphery capacitance per meter of junction perimeter in F/m
Mjsw	0.33	no	bulk junction periphery grading coefficient
Tt	0.0 ps	no	temps de tránsito del sustrato
Nsub	0.0	no	substrate bulk doping density in 1/cm^3
Nss	0.0	no	densitat del estado de la superficie en 1/cm²
Tpg	1	no	tipo de material de la puerta: 0 = aluminio; -1=igual que el sustrato; 1=contrario al sustrato
Uo	600.0	no	movilidad de la superficie en cm²/Vs
Rsh	0.0	no	hoja de difusión del surtidor y drenador amb la resistencia en Ohms/cuadrado
Nrd	1	no	número de cuadrados de drenador equivalentes
Nrs	1	no	número de cuadrados de surtidor equivalentes
Cj	0.0	no	capaicidad de la polarización de la unión inferior del sustrato por metro cuadrado de área de unión en F/m²
Js	0.0	no	corriente de saturación del sustrato por metro cuadrado del área de la unión en A/m²
Ad	0.0	no	área de difusión del drenador en m²
As	0.0	no	área de difusión del surtidor en m²
Pd	0.0 m	no	perímetro de la unión del drenador
Ps	0.0 m	no	perímetro de la unión del surtidor
Kf	0.0	no	coeficiente de ruido térmico
Af	1.0	no	exponente de ruido térmico
Ffe	1.0	no	exponente de freqüència de ruido térmico
Temp	26.85	no	temperatura de simulación en grados Celsius
Tnom	26.85	no	temperatura de medida del parámetro

P-Mosfet¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	MOSFET-p
Descripció	MOS field-effect transistor with substrate
Schematic entry	`MOSFET`
Netlist entry	`T`
Tipus	AnalogComponent
Bitmap file	pmosfet_sub
Propietats	44
Category	nonlinear components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Tipus	pfet	no	polarity [nfet, pfet]
Vt0	-1.0 V	Si	tensión umbral de polarización
Kp	2e-5	Si	coeficiente de transconductancia en A/V^2
Gamma	0.0	no	sustrato umbral en raiz cuadrada de V
Phi	0.6 V	no	potencial de la superficie
Lambda	0.0	Si	parámetro de modulación de la longitud del canal en 1/V
Rd	0.0 Ohm	no	resistencia del drenador
Rs	0.0 Ohm	no	resistencia del surtidor
Rg	0.0 Ohm	no	resistencia de la puerta
Is	1e-14 A	no	corriente de saturación unión-sustrato
N	1.0	no	coeficiente de emisión de la unión del sustrato
W	1 um	no	ancho del canal
L	1 um	no	longitud del canal
Ld	0.0	no	longitud de difusión lateral
Tox	0.1 um	no	grosor del óxido
Cgso	0.0	no	capacidad sobrepuesta de la puerta-surtidor por metro de la anchura del canal en F/m
Cgdo	0.0	no	capacidad sobrepuesta de la puerta-drenador por metro de la anchura del canal en F/m
Cgbo	0.0	no	capacidad sobrepuesta puerta-sustrato por metro de longitud del canal en F/m
Cbd	0.0 F	no	capacidad de la polarización de la unión sustrato-drenador
Cbs	0.0 F	no	capacidad de la polarización de la unión sustrato-surtidor
Pb	0.8 V	no	potencial unión-sustrato
Mj	0.5	no	Parámetero de difusión del substrato
Fc	0.5	no	bulk junction forward-bias depletion capacitance coefficient
Cjsw	0.0	no	zero-bias bulk junction periphery capacitance per meter of junction perimeter in F/m
Mjsw	0.33	no	bulk junction periphery grading coefficient
Tt	0.0 ps	no	temps de tránsito del sustrato
Nsub	0.0	no	substrate bulk doping density in 1/cm^3
Nss	0.0	no	densitat del estado de la superficie en 1/cm²
Tpg	1	no	tipo de material de la puerta: 0 = aluminio; -1=igual que el sustrato; 1=contrario al sustrato
Uo	600.0	no	movilidad de la superficie en cm²/Vs
Rsh	0.0	no	hoja de difusión del surtidor y drenador amb la resistencia en Ohms/cuadrado
Nrd	1	no	número de cuadrados de drenador equivalentes
Nrs	1	no	número de cuadrados de surtidor equivalentes
Cj	0.0	no	capaicidad de la polarización de la unión inferior del sustrato por metro cuadrado de área de unión en F/m²
Js	0.0	no	corriente de saturación del sustrato por metro cuadrado del área de la unión en A/m²
Ad	0.0	no	área de difusión del drenador en m²
As	0.0	no	área de difusión del surtidor en m²
Pd	0.0 m	no	perímetro de la unión del drenador
Ps	0.0 m	no	perímetro de la unión del surtidor
Kf	0.0	no	coeficiente de ruido térmico
Af	1.0	no	exponente de ruido térmico
Ffe	1.0	no	exponente de freqüència de ruido térmico
Temp	26.85	no	temperatura de simulación en grados Celsius
Tnom	26.85	no	temperatura de medida del parámetro

Depletion Mosfet¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	depletion MOSFET
Descripció	MOS field-effect transistor with substrate
Schematic entry	`MOSFET`
Netlist entry	`T`
Tipus	AnalogComponent
Bitmap file	dmosfet_sub
Propietats	44
Category	nonlinear components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Tipus	nfet	no	polarity [nfet, pfet]
Vt0	-1.0 V	Si	tensión umbral de polarización
Kp	2e-5	Si	coeficiente de transconductancia en A/V^2
Gamma	0.0	no	sustrato umbral en raiz cuadrada de V
Phi	0.6 V	no	potencial de la superficie
Lambda	0.0	Si	parámetro de modulación de la longitud del canal en 1/V
Rd	0.0 Ohm	no	resistencia del drenador
Rs	0.0 Ohm	no	resistencia del surtidor
Rg	0.0 Ohm	no	resistencia de la puerta
Is	1e-14 A	no	corriente de saturación unión-sustrato
N	1.0	no	coeficiente de emisión de la unión del sustrato
W	1 um	no	ancho del canal
L	1 um	no	longitud del canal
Ld	0.0	no	longitud de difusión lateral
Tox	0.1 um	no	grosor del óxido
Cgso	0.0	no	capacidad sobrepuesta de la puerta-surtidor por metro de la anchura del canal en F/m
Cgdo	0.0	no	capacidad sobrepuesta de la puerta-drenador por metro de la anchura del canal en F/m
Cgbo	0.0	no	capacidad sobrepuesta puerta-sustrato por metro de longitud del canal en F/m
Cbd	0.0 F	no	capacidad de la polarización de la unión sustrato-drenador
Cbs	0.0 F	no	capacidad de la polarización de la unión sustrato-surtidor
Pb	0.8 V	no	potencial unión-sustrato
Mj	0.5	no	Parámetero de difusión del substrato
Fc	0.5	no	bulk junction forward-bias depletion capacitance coefficient
Cjsw	0.0	no	zero-bias bulk junction periphery capacitance per meter of junction perimeter in F/m
Mjsw	0.33	no	bulk junction periphery grading coefficient
Tt	0.0 ps	no	temps de tránsito del sustrato
Nsub	0.0	no	substrate bulk doping density in 1/cm^3
Nss	0.0	no	densitat del estado de la superficie en 1/cm²
Tpg	1	no	tipo de material de la puerta: 0 = aluminio; -1=igual que el sustrato; 1=contrario al sustrato
Uo	600.0	no	movilidad de la superficie en cm²/Vs
Rsh	0.0	no	hoja de difusión del surtidor y drenador amb la resistencia en Ohms/cuadrado
Nrd	1	no	número de cuadrados de drenador equivalentes
Nrs	1	no	número de cuadrados de surtidor equivalentes
Cj	0.0	no	capaicidad de la polarización de la unión inferior del sustrato por metro cuadrado de área de unión en F/m²
Js	0.0	no	corriente de saturación del sustrato por metro cuadrado del área de la unión en A/m²
Ad	0.0	no	área de difusión del drenador en m²
As	0.0	no	área de difusión del surtidor en m²
Pd	0.0 m	no	perímetro de la unión del drenador
Ps	0.0 m	no	perímetro de la unión del surtidor
Kf	0.0	no	coeficiente de ruido térmico
Af	1.0	no	exponente de ruido térmico
Ffe	1.0	no	exponente de freqüència de ruido térmico
Temp	26.85	no	temperatura de simulación en grados Celsius
Tnom	26.85	no	temperatura de medida del parámetro

Opamp¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	AmpOp
Descripció	amplificador operacional
Schematic entry	`OpAmp`
Netlist entry	`OP`
Tipus	AnalogComponent
Bitmap file	opamp
Propietats	2
Category	nonlinear components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
G	1e6	Si	ganancia de tensión
Umax	15 V	no	valor absoluto del voltaje máximo y mínimo de salida

Equation Defined Device¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Equation Defined Device
Descripció	equation defined device
Schematic entry	`EDD`
Netlist entry	`D`
Tipus	AnalogComponent
Bitmap file	edd
Propietats	4
Category	nonlinear components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Tipus	explicit	no	type of equations [explicit, implicit]
Branches	1	no	number of branches
I1	0	Si	current equation 1
Q1	0	no	charge equation 1

Diac¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Diac
Descripció	diac (bidirectional trigger diode)
Schematic entry	`Diac`
Netlist entry	`D`
Tipus	AnalogComponent
Bitmap file	diac
Propietats	7
Category	nonlinear components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Vbo	30 V	Si	(bidirectional) breakover voltage
Ibo	50 uA	no	(bidirectional) breakover current
Cj0	10 pF	no	parasitic capacitance
Is	1e-10 A	no	corriente de saturación
N	2	no	coeficiente de emisión
Ri	10 Ohm	no	intrinsic junction resistance
Temp	26.85	no	simulation temperature

Triac¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Triac
Descripció	triac (bidirectional thyristor)
Schematic entry	`Triac`
Netlist entry	`D`
Tipus	AnalogComponent
Bitmap file	triac
Propietats	8
Category	nonlinear components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Vbo	400 V	no	(bidirectional) breakover voltage
Igt	50 uA	Si	(bidirectional) gate trigger current
Cj0	10 pF	no	parasitic capacitance
Is	1e-10 A	no	corriente de saturación
N	2	no	coeficiente de emisión
Ri	10 Ohm	no	intrinsic junction resistance
Rg	5 Ohm	no	gate resistance
Temp	26.85	no	simulation temperature

Thyristor¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Thyristor
Descripció	silicon controlled rectifier (SCR)
Schematic entry	`SCR`
Netlist entry	`D`
Tipus	AnalogComponent
Bitmap file	thyristor
Propietats	8
Category	nonlinear components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Vbo	400 V	no	breakover voltage
Igt	50 uA	Si	gate trigger current
Cj0	10 pF	no	parasitic capacitance
Is	1e-10 A	no	corriente de saturación
N	2	no	coeficiente de emisión
Ri	10 Ohm	no	intrinsic junction resistance
Rg	5 Ohm	no	gate resistance
Temp	26.85	no	simulation temperature

Tunnel Diode¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Tunnel Diode
Descripció	resonance tunnel diode
Schematic entry	`RTD`
Netlist entry	`D`
Tipus	AnalogComponent
Bitmap file	tunneldiode
Propietats	16
Category	nonlinear components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Ip	4 mA	Si	peak current
Iv	0.6 mA	Si	valley current
Vv	0.8 V	Si	valley voltage
Wr	2.7e-20	no	resonance energy in Ws
eta	1e-20	no	Fermi energy in Ws
dW	4.5e-21	no	resonance width in Ws
Tmax	0.95	no	maximum of transmission
de	0.9	no	fitting factor for electron density
dv	2.0	no	fitting factor for voltage drop
nv	16	no	fitting factor for diode current
Cj0	80 fF	no	zero-bias depletion capacitance
M	0.5	no	coeficiente de graduación
Vj	0.5 V	no	potencial de la unión
te	0.6 ps	no	life-time of electrons
Temp	26.85	no	temperatura de simulación en grados Celsius
Area	1.0	no	area predeterminada para el diodo

Verilog-A Devices¶

Hicum L2 V2.1¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	HICUM L2 v2.1
Descripció	HICUM Level 2 v2.1 verilog device
Schematic entry	`hicumL2V2p1`
Netlist entry	`T`
Tipus	AnalogComponent
Bitmap file	npnsub_therm
Propietats	101
Category	verilog-a devices

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
c10	1.516E-31	no	GICCR constant
qp0	5.939E-15	no	Zero-bias hole charge
ich	1.0E11	no	High-current correction for 2D and 3D effects
hfe	1.0	no	Emitter minority charge weighting factor in HBTs
hfc	0.03999	no	Collector minority charge weighting factor in HBTs
hjei	0.435	no	B-E depletion charge weighting factor in HBTs
hjci	0.09477	no	B-C depletion charge weighting factor in HBTs
ibeis	3.47E-20	no	Internal B-E saturation current
mbei	1.025	no	Internal B-E current ideality factor
ireis	390E-12	no	Internal B-E recombination saturation current
mrei	3	no	Internal B-E recombination current ideality factor
ibeps	4.18321E-21	no	Peripheral B-E saturation current
mbep	1.045	no	Peripheral B-E current ideality factor
ireps	1.02846E-14	no	Peripheral B-E recombination saturation current
mrep	3	no	Peripheral B-E recombination current ideality factor
mcf	1.0	no	Non-ideality factor for III-V HBTs
ibcis	3.02613E-18	no	Internal B-C saturation current
mbci	1.0	no	Internal B-C current ideality factor
ibcxs	4.576E-29	no	External B-C saturation current
mbcx	1.0	no	External B-C current ideality factor
ibets	0.0	no	B-E tunneling saturation current
abet	36.74	no	Exponent factor for tunneling current
favl	14.97	no	Avalanche current factor
qavl	7.2407E-14	no	Exponent factor for avalanche current
alfav	0.0	no	Relative TC for FAVL
alqav	0.0	no	Relative TC for QAVL
rbi0	7.9	no	Zero bias internal base resistance
rbx	13.15	no	External base series resistance
fgeo	0.724	no	Factor for geometry dependence of emitter current crowding
fdqr0	0	no	Correction factor for modulation by B-E and B-C space charge layer
fcrbi	0.0	no	Ratio of HF shunt to total internal capacitance (lateral NQS effect)
fqi	1.0	no	Ration of internal to total minority charge
re	9.77	no	Emitter series resistance
rcx	10	no	External collector series resistance
itss	2.81242E-19	no	Substrate transistor transfer saturation current
msf	1.0	no	Forward ideality factor of substrate transfer current
iscs	7.6376E-17	no	C-S diode saturation current
msc	1.0	no	Ideality factor of C-S diode current
tsf	1.733E-8	no	Transit time for forward operation of substrate transistor
rsu	800	no	Substrate series resistance
csu	1.778E-14	no	Substrate shunt capacitance
cjei0	5.24382E-14	no	Internal B-E zero-bias depletion capacitance
vdei	0.9956	no	Internal B-E built-in potential
zei	0.4	no	Internal B-E grading coefficient
aljei	2.5	no	Ratio of maximum to zero-bias value of internal B-E capacitance
cjep0	0	no	Peripheral B-E zero-bias depletion capacitance
vdep	1	no	Peripheral B-E built-in potential
zep	0.01	no	Peripheral B-E grading coefficient
aljep	2.5	no	Ratio of maximum to zero-bias value of peripheral B-E capacitance
cjci0	4.46887E-15	no	Internal B-C zero-bias depletion capacitance
vdci	0.7	no	Internal B-C built-in potential
zci	0.38	no	Internal B-C grading coefficient
vptci	100	no	Internal B-C punch-through voltage
cjcx0	1.55709E-14	no	External B-C zero-bias depletion capacitance
vdcx	0.733	no	External B-C built-in potential
zcx	0.34	no	External B-C grading coefficient
vptcx	100	no	External B-C punch-through voltage
fbc	0.3487	no	Partitioning factor of parasitic B-C capacitance
cjs0	17.68E-15	no	C-S zero-bias depletion capacitance
vds	0.621625	no	C-S built-in potential
zs	0.122136	no	C-S grading coefficient
vpts	1000	no	C-S punch-through voltage
t0	1.28E-12	no	Low current forward transit time at VBC=0V
dt0h	260E-15	no	Time constant for base and B-C space charge layer width modulation
tbvl	2.0E-13	no	Time constant for modelling carrier jam at low VCE
tef0	0.0	no	Neutral emitter storage time
gtfe	1.0	no	Exponent factor for current dependence of neutral emitter storage time
thcs	46E-15	no	Saturation time constant at high current densities
alhc	0.08913	no	Smoothing factor for current dependence of base and collector transit time
fthc	0.8778	no	Partitioning factor for base and collector portion
rci0	50.4277	no	Internal collector resistance at low electric field
vlim	0.9	no	Voltage separating ohmic and saturation velocity regime
vces	0.01	no	Internal C-E saturation voltage
vpt	10	no	Collector punch-through voltage
tr	1.0E-11	no	Storage time for inverse operation
ceox	1.71992E-15	no	Total parasitic B-E capacitance
ccox	4.9E-15	no	Total parasitic B-C capacitance
alqf	0.1288	no	Factor for additional delay time of minority charge
alit	1.0	no	Factor for additional delay time of transfer current
kf	2.83667E-9	no	Flicker noise coefficient
af	2.0	no	Flicker noise exponent factor
krbi	1.0	no	Noise factor for internal base resistance
latb	10.479	no	Scaling factor for collector minority charge in direction of emitter width
latl	0.300012	no	Scaling factor for collector minority charge in direction of emitter length
vgb	1.112	no	Bandgap voltage extrapolated to 0 K
alt0	0.0017580	no	First order relative TC of parameter T0
kt0	4.07E-6	no	Second order relative TC of parameter T0
zetaci	0.7	no	Temperature exponent for RCI0
zetacx	1.0	no	Temperature exponent of mobility in substrate transistor transit time
alvs	0.001	no	Relative TC of saturation drift velocity
alces	0.000125	no	Relative TC of VCES
zetarbi	0.0	no	Temperature exponent of internal base resistance
zetarbx	0.2	no	Temperature exponent of external base resistance
zetarcx	0.21	no	Temperature exponent of external collector resistance
zetare	0.7	no	Temperature exponent of emitter resistance
alb	0.007	no	Relative TC of forward current gain for V2.1 model
rth	1293.95	no	Thermal resistance
cth	7.22203E-11	no	Thermal capacitance
tnom	27.0	no	Temperature at which parameters are specified
dt	0.0	no	Temperature change w.r.t. chip temperature for particular transistor
Temp	27	no	simulation temperature

Fbh Hbt¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	FBH HBT
Descripció	HBT model by Ferdinand-Braun-Institut (FBH), Berlin
Schematic entry	`HBT_X`
Netlist entry	`T`
Tipus	AnalogComponent
Bitmap file	npn_therm
Propietats	80
Category	verilog-a devices

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Mode	1	no	Ignored
Noise	1	no	Ignored
Debug	0	no	Ignored
DebugPlus	0	no	Ignored
Temp	25.0	no	Device operating temperature, Celsius
Rth	0.1	no	Thermal resistance, K/W
Cth	700e-9	no	Thermal capacitance
N	1	no	Scaling factor, number of emitter fingers
L	30e-6	no	Length of emitter finger, m
W	1e-6	no	Width of emitter finger, m
Jsf	20e-24	no	Forward saturation current density, A/um^2
nf	1.0	no	Forward current emission coefficient
Vg	1.3	no	Forward thermal activation energy, V, (0 == disables temperature dependence)
Jse	0.0	no	B-E leakage saturation current density, A/um^2
ne	0.0	no	B-E leakage emission coefficient
Rbxx	1e6	no	Limiting resistor of B-E leakage diode, Ohm
Vgb	0.0	no	B-E leakage thermal activation energy, V, (0 == disables temperature dependence)
Jsee	0.0	no	2nd B-E leakage saturation current density, A/um^2
nee	0.0	no	2nd B-E leakage emission coefficient
Rbbxx	1e6	no	2nd Limiting resistor of B-E leakage diode, Ohm
Vgbb	0.0	no	2nd B-E leakage thermal activation energy, V, (0 == disables temperature dependence)
Jsr	20e-18	no	Reverse saturation current density, A/um^2
nr	1.0	no	Reverse current emission coefficient
Vgr	0.0	no	Reverse thermal activation energy, V, (0 == disables temperature dependence)
XCjc	0.5	no	Fraction of Cjc that goes to internal base node
Jsc	0.0	no	B-C leakage saturation current density, A/um^2 (0. switches off diode)
nc	0.0	no	B-C leakage emission coefficient (0. switches off diode)
Rcxx	1e6	no	Limiting resistor of B-C leakage diode, Ohm
Vgc	0.0	no	B-C leakage thermal activation energy, V, (0 == disables temperature dependence)
Bf	100.0	no	Ideal forward beta
kBeta	0.0	no	Temperature coefficient of forward current gain, -1/K, (0 == disables temperature dependence)
Br	1.0	no	Ideal reverse beta
VAF	0.0	no	Forward Early voltage, V, (0 == disables Early Effect)
VAR	0.0	no	Reverse Early voltage, V, (0 == disables Early Effect)
IKF	0.0	no	Forward high-injection knee current, A, (0 == disables Webster Effect)
IKR	0.0	no	Reverse high-injection knee current, A, (0 == disables Webster Effect)
Mc	0.0	no	C-E breakdown exponent, (0 == disables collector break-down)
BVceo	0.0	no	C-E breakdown voltage, V, (0 == disables collector break-down)
kc	0.0	no	C-E breakdown factor, (0 == disables collector break-down)
BVebo	0.0	no	B-E breakdown voltage, V, (0 == disables emitter break-down)
Tr	1.0e-15	no	Ideal reverse transit time, s
Trx	1.0e-15	no	Extrinsic BC diffusion capacitance, F
Tf	1.0e-12	no	Ideal forward transit time, s
Tft	0.0	no	Temperature coefficient of forward transit time
Thcs	0.0	no	Excess transit time coefficient at base push-out
Ahc	0.0	no	Smoothing parameter for Thcs
Cje	1.0e-15	no	B-E zero-bias depletion capacitance, F/um^2
mje	0.5	no	B-E junction exponential factor
Vje	1.3	no	B-E junction built-in potential, V
Cjc	1.0e-15	no	B-C zero-bias depletion capacitance, F/um^2
mjc	0.5	no	B-C junction exponential factor
Vjc	1.3	no	B-C junction built-in potential, V
kjc	1.0	no	not used
Cmin	0.1e-15	no	Minimum B-C depletion capacitance (Vbc dependence), F/um^2
J0	1e-3	no	Collector current where Cbc reaches Cmin, A/um^2 (0 == disables Cbc reduction)
XJ0	1.0	no	Fraction of Cmin, lower limit of BC capacitance (Ic dependence)
Rci0	1e-3	no	Onset of base push-out at low voltages, Ohm*um^2 (0 == disables base push-out)
Jk	4e-4	no	Onset of base push-out at high voltages, A/um^2, (0 == disables base push-out)
RJk	1e-3	no	Slope of Jk at high currents , Ohm*um^2
Vces	1e-3	no	Voltage shift of base push-out onset, V
Rc	1.0	no	Collector resistance, Ohm/finger
Re	1.0	no	Emitter resistance, Ohm/finger
Rb	1.0	no	Extrinsic base resistance, Ohm/finger
Rb2	1.0	no	Inner Base ohmic resistance, Ohm/finger
Lc	0.0	no	Collector inductance, H
Le	0.0	no	Emitter inductance, H
Lb	0.0	no	Base inductance, H
Cq	0.0	no	Extrinsic B-C capacitance, F
Cpb	0.0	no	Extrinsic base capacitance, F
Cpc	0.0	no	Extrinsic collector capacitance, F
Kfb	0.0	no	Flicker-noise coefficient
Afb	0.0	no	Flicker-noise exponent
Ffeb	0.0	no	Flicker-noise frequency exponent
Kb	0.0	no	Burst noise coefficient
Ab	0.0	no	Burst noise exponent
Fb	0.0	no	Burst noise corner frequency, Hz
Kfe	0.0	no	Flicker-noise coefficient
Afe	0.0	no	Flicker-noise exponent
Ffee	0.0	no	Flicker-noise frequency exponent
Tnom	20.0	no	Ambient temperature at which the parameters were determined

Modular Opamp¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Modular OpAmp
Descripció	Modular Operational Amplifier verilog device
Schematic entry	`mod_amp`
Netlist entry	`OP`
Tipus	AnalogComponent
Bitmap file	mod_amp
Propietats	17
Category	verilog-a devices

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
GBP	1e6	no	Gain bandwidth product (Hz)
AOLDC	106.0	no	Open-loop differential gain at DC (dB)
FP2	3e6	no	Second pole frequency (Hz)
RO	75	no	Output resistance (Ohm)
CD	1e-12	no	Differential input capacitance (F)
RD	2e6	no	Differential input resistance (Ohm)
IOFF	20e-9	no	Input offset current (A)
IB	80e-9	no	Input bias current (A)
VOFF	7e-4	no	Input offset voltage (V)
CMRRDC	90.0	no	Common-mode rejection ratio at DC (dB)
FCM	200.0	no	Common-mode zero corner frequency (Hz)
PSRT	5e5	no	Positive slew rate (V/s)
NSRT	5e5	no	Negative slew rate (V/s)
VLIMP	14	no	Positive output voltage limit (V)
VLIMN	-14	no	Negative output voltage limit (V)
ILMAX	35e-3	no	Maximum DC output current (A)
CSCALE	50	no	Current limit scale factor

Hicum L2 V2.22¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	HICUM L2 v2.22
Descripció	HICUM Level 2 v2.22 verilog device
Schematic entry	`hic2_full`
Netlist entry	`T`
Tipus	AnalogComponent
Bitmap file	npnsub_therm
Propietats	114
Category	verilog-a devices

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
c10	2.0E-30	no	GICCR constant (A^2s)
qp0	2.0E-14	no	Zero-bias hole charge (Coul)
ich	0.0	no	High-current correction for 2D and 3D effects (A)
hfe	1.0	no	Emitter minority charge weighting factor in HBTs
hfc	1.0	no	Collector minority charge weighting factor in HBTs
hjei	1.0	no	B-E depletion charge weighting factor in HBTs
hjci	1.0	no	B-C depletion charge weighting factor in HBTs
ibeis	1.0E-18	no	Internal B-E saturation current (A)
mbei	1.0	no	Internal B-E current ideality factor
ireis	0.0	no	Internal B-E recombination saturation current (A)
mrei	2.0	no	Internal B-E recombination current ideality factor
ibeps	0.0	no	Peripheral B-E saturation current (A)
mbep	1.0	no	Peripheral B-E current ideality factor
ireps	0.0	no	Peripheral B-E recombination saturation current (A)
mrep	2.0	no	Peripheral B-E recombination current ideality factor
mcf	1.0	no	Non-ideality factor for III-V HBTs
tbhrec	0.0	no	Base current recombination time constant at B-C barrier for high forward injection (s)
ibcis	1.0E-16	no	Internal B-C saturation current (A)
mbci	1.0	no	Internal B-C current ideality factor
ibcxs	0.0	no	External B-C saturation current (A)
mbcx	1.0	no	External B-C current ideality factor
ibets	0.0	no	B-E tunneling saturation current (A)
abet	40	no	Exponent factor for tunneling current
tunode	1	no	Specifies the base node connection for the tunneling current
favl	0.0	no	Avalanche current factor (1/V)
qavl	0.0	no	Exponent factor for avalanche current (Coul)
alfav	0.0	no	Relative TC for FAVL (1/K)
alqav	0.0	no	Relative TC for QAVL (1/K)
rbi0	0.0	no	Zero bias internal base resistance (Ohm)
rbx	0.0	no	External base series resistance (Ohm)
fgeo	0.6557	no	Factor for geometry dependence of emitter current crowding
fdqr0	0.0	no	Correction factor for modulation by B-E and B-C space charge layer
fcrbi	0.0	no	Ratio of HF shunt to total internal capacitance (lateral NQS effect)
fqi	1.0	no	Ration of internal to total minority charge
re	0.0	no	Emitter series resistance (Ohm)
rcx	0.0	no	External collector series resistance (Ohm)
itss	0.0	no	Substrate transistor transfer saturation current (A)
msf	1.0	no	Forward ideality factor of substrate transfer current
iscs	0.0	no	C-S diode saturation current (A)
msc	1.0	no	Ideality factor of C-S diode current
tsf	0.0	no	Transit time for forward operation of substrate transistor (s)
rsu	0.0	no	Substrate series resistance (Ohm)
csu	0.0	no	Substrate shunt capacitance (F)
cjei0	1.0E-20	no	Internal B-E zero-bias depletion capacitance (F)
vdei	0.9	no	Internal B-E built-in potential (V)
zei	0.5	no	Internal B-E grading coefficient
ajei	2.5	no	Ratio of maximum to zero-bias value of internal B-E capacitance
cjep0	1.0E-20	no	Peripheral B-E zero-bias depletion capacitance (F)
vdep	0.9	no	Peripheral B-E built-in potential (V)
zep	0.5	no	Peripheral B-E grading coefficient
ajep	2.5	no	Ratio of maximum to zero-bias value of peripheral B-E capacitance
cjci0	1.0E-20	no	Internal B-C zero-bias depletion capacitance (F)
vdci	0.7	no	Internal B-C built-in potential (V)
zci	0.4	no	Internal B-C grading coefficient
vptci	100	no	Internal B-C punch-through voltage (V)
cjcx0	1.0E-20	no	External B-C zero-bias depletion capacitance (F)
vdcx	0.7	no	External B-C built-in potential (V)
zcx	0.4	no	External B-C grading coefficient
vptcx	100	no	External B-C punch-through voltage (V)
fbcpar	0.0	no	Partitioning factor of parasitic B-C cap
fbepar	1.0	no	Partitioning factor of parasitic B-E cap
cjs0	0.0	no	C-S zero-bias depletion capacitance (F)
vds	0.6	no	C-S built-in potential (V)
zs	0.5	no	C-S grading coefficient
vpts	100	no	C-S punch-through voltage (V)
t0	0.0	no	Low current forward transit time at VBC=0V (s)
dt0h	0.0	no	Time constant for base and B-C space charge layer width modulation (s)
tbvl	0.0	no	Time constant for modelling carrier jam at low VCE (s)
tef0	0.0	no	Neutral emitter storage time (s)
gtfe	1.0	no	Exponent factor for current dependence of neutral emitter storage time
thcs	0.0	no	Saturation time constant at high current densities (s)
ahc	0.1	no	Smoothing factor for current dependence of base and collector transit time
fthc	0.0	no	Partitioning factor for base and collector portion
rci0	150	no	Internal collector resistance at low electric field (Ohm)
vlim	0.5	no	Voltage separating ohmic and saturation velocity regime (V)
vces	0.1	no	Internal C-E saturation voltage (V)
vpt	0.0	no	Collector punch-through voltage (V)
tr	0.0	no	Storage time for inverse operation (s)
cbepar	0.0	no	Total parasitic B-E capacitance (F)
cbcpar	0.0	no	Total parasitic B-C capacitance (F)
alqf	0.0	no	Factor for additional delay time of minority charge
alit	0.0	no	Factor for additional delay time of transfer current
flnqs	0	no	Flag for turning on and off of vertical NQS effect
kf	0.0	no	Flicker noise coefficient
af	2.0	no	Flicker noise exponent factor
cfbe	-1	no	Flag for determining where to tag the flicker noise source
latb	0.0	no	Scaling factor for collector minority charge in direction of emitter width
latl	0.0	no	Scaling factor for collector minority charge in direction of emitter length
vgb	1.17	no	Bandgap voltage extrapolated to 0 K (V)
alt0	0.0	no	First order relative TC of parameter T0 (1/K)
kt0	0.0	no	Second order relative TC of parameter T0
zetaci	0.0	no	Temperature exponent for RCI0
alvs	0.0	no	Relative TC of saturation drift velocity (1/K)
alces	0.0	no	Relative TC of VCES (1/K)
zetarbi	0.0	no	Temperature exponent of internal base resistance
zetarbx	0.0	no	Temperature exponent of external base resistance
zetarcx	0.0	no	Temperature exponent of external collector resistance
zetare	0.0	no	Temperature exponent of emitter resistance
zetacx	1.0	no	Temperature exponent of mobility in substrate transistor transit time
vge	1.17	no	Effective emitter bandgap voltage (V)
vgc	1.17	no	Effective collector bandgap voltage (V)
vgs	1.17	no	Effective substrate bandgap voltage (V)
f1vg	-1.02377e-4	no	Coefficient K1 in T-dependent band-gap equation
f2vg	4.3215e-4	no	Coefficient K2 in T-dependent band-gap equation
zetact	3.0	no	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	no	Exponent coefficient in B-E junction current temperature dependence
alb	0.0	no	Relative TC of forward current gain for V2.1 model (1/K)
flsh	0	no	Flag for turning on and off self-heating effect
rth	0.0	no	Thermal resistance (K/W)
cth	0.0	no	Thermal capacitance (J/W)
flcomp	0.0	no	Flag for compatibility with v2.1 model (0=v2.1)
tnom	27.0	no	Temperature at which parameters are specified (C)
dt	0.0	no	Temperature change w.r.t. chip temperature for particular transistor (K)
Temp	27	no	simulation temperature

Logarithmic Amplifier¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Logarithmic Amplifier
Descripció	Logarithmic Amplifier verilog device
Schematic entry	`log_amp`
Netlist entry	`LA`
Tipus	AnalogComponent
Bitmap file	log_amp
Propietats	17
Category	verilog-a devices

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Kv	1.0	no	scale factor
Dk	0.3	no	scale factor error (%)
Ib1	5e-12	no	input I1 bias current (A)
Ibr	5e-12	no	input reference bias current (A)
M	5	no	number of decades
N	0.1	no	conformity error (%)
Vosout	3e-3	no	output offset error (V)
Rinp	1e6	no	amplifier input resistance (Ohm)
Fc	1e3	no	amplifier 3dB frequency (Hz)
Ro	1e-3	no	amplifier output resistance (Ohm)
Ntc	0.002	no	conformity error temperature coefficient (%/Celsius)
Vosouttc	80e-6	no	offset temperature coefficient (V/Celsius)
Dktc	0.03	no	scale factor error temperature coefficient (%/Celsius)
Ib1tc	0.5e-12	no	input I1 bias current temperature coefficient (A/Celsius)
Ibrtc	0.5e-12	no	input reference bias current temperature coefficient (A/Celsius)
Tnom	26.85	no	parameter measurement temperature (Celsius)
Temp	26.85	no	simulation temperature

Npn Hicum L0 V1.12¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	npn HICUM L0 v1.12
Descripció	HICUM Level 0 v1.12 verilog device
Schematic entry	`hic0_full`
Netlist entry	`T`
Tipus	AnalogComponent
Bitmap file	npnsub_therm
Propietats	86
Category	verilog-a devices

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Tipus	npn	Si	polarity [npn, pnp]
is	1.0e-16	no	(Modified) saturation current (A)
mcf	1.00	no	Non-ideality coefficient of forward collector current
mcr	1.00	no	Non-ideality coefficient of reverse collector current
vef	1.0e6	no	forward Early voltage (normalization volt.) (V)
iqf	1.0e6	no	forward d.c. high-injection roll-off current (A)
iqr	1.0e6	no	inverse d.c. high-injection roll-off current (A)
iqfh	1.0e6	no	high-injection correction current (A)
tfh	1.0e6	no	high-injection correction factor
ibes	1e-18	no	BE saturation current (A)
mbe	1.0	no	BE non-ideality factor
ires	0.0	no	BE recombination saturation current (A)
mre	2.0	no	BE recombination non-ideality factor
ibcs	0.0	no	BC saturation current (A)
mbc	1.0	no	BC non-ideality factor
cje0	1.0e-20	no	Zero-bias BE depletion capacitance (F)
vde	0.9	no	BE built-in voltage (V)
ze	0.5	no	BE exponent factor
aje	2.5	no	Ratio of maximum to zero-bias value
t0	0.0	no	low current transit time at Vbici=0 (s)
dt0h	0.0	no	Base width modulation contribution (s)
tbvl	0.0	no	SCR width modulation contribution (s)
tef0	0.0	no	Storage time in neutral emitter (s)
gte	1.0	no	Exponent factor for emitter transit time
thcs	0.0	no	Saturation time at high current densities (s)
ahc	0.1	no	Smoothing factor for current dependence
tr	0.0	no	Storage time at inverse operation (s)
rci0	150	no	Low-field collector resistance under emitter (Ohm)
vlim	0.5	no	Voltage dividing ohmic and satur.region (V)
vpt	100	no	Punch-through voltage (V)
vces	0.1	no	Saturation voltage (V)
cjci0	1.0e-20	no	Total zero-bias BC depletion capacitance (F)
vdci	0.7	no	BC built-in voltage (V)
zci	0.333	no	BC exponent factor
vptci	100	no	Punch-through voltage of BC junction (V)
cjcx0	1.0e-20	no	Zero-bias external BC depletion capacitance (F)
vdcx	0.7	no	External BC built-in voltage (V)
zcx	0.333	no	External BC exponent factor
vptcx	100	no	Punch-through voltage (V)
fbc	1.0	no	Split factor = Cjci0/Cjc0
rbi0	0.0	no	Internal base resistance at zero-bias (Ohm)
vr0e	2.5	no	forward Early voltage (normalization volt.) (V)
vr0c	1.0e6	no	forward Early voltage (normalization volt.) (V)
fgeo	0.656	no	Geometry factor
rbx	0.0	no	External base series resistance (Ohm)
rcx	0.0	no	Emitter series resistance (Ohm)
re	0.0	no	External collector series resistance (Ohm)
itss	0.0	no	Substrate transistor transfer saturation current (A)
msf	1.0	no	Substrate transistor transfer current non-ideality factor
iscs	0.0	no	SC saturation current (A)
msc	1.0	no	SC non-ideality factor
cjs0	1.0e-20	no	Zero-bias SC depletion capacitance (F)
vds	0.3	no	SC built-in voltage (V)
zs	0.3	no	External SC exponent factor
vpts	100	no	SC punch-through voltage (V)
cbcpar	0.0	no	Collector-base isolation (overlap) capacitance (F)
cbepar	0.0	no	Emitter-base oxide capacitance (F)
eavl	0.0	no	Exponent factor
kavl	0.0	no	Prefactor
kf	0.0	no	flicker noise coefficient (M^(1-AF))
af	2.0	no	flicker noise exponent factor
vgb	1.2	no	Bandgap-voltage (V)
vge	1.17	no	Effective emitter bandgap-voltage (V)
vgc	1.17	no	Effective collector bandgap-voltage (V)
vgs	1.17	no	Effective substrate bandgap-voltage (V)
f1vg	-1.02377e-4	no	Coefficient K1 in T-dependent bandgap equation (V/K)
f2vg	4.3215e-4	no	Coefficient K2 in T-dependent bandgap equation (V/K)
alt0	0.0	no	Frist-order TC of tf0 (1/K)
kt0	0.0	no	Second-order TC of tf0 (1/K^2)
zetact	3.0	no	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	no	Exponent coefficient in BE junction current temperature dependence
zetaci	0.0	no	TC of epi-collector diffusivity
alvs	0.0	no	Relative TC of satur.drift velocity (1/K)
alces	0.0	no	Relative TC of vces (1/K)
zetarbi	0.0	no	TC of internal base resistance
zetarbx	0.0	no	TC of external base resistance
zetarcx	0.0	no	TC of external collector resistance
zetare	0.0	no	TC of emitter resistances
alkav	0.0	no	TC of avalanche prefactor (1/K)
aleav	0.0	no	TC of avalanche exponential factor (1/K)
flsh	0	no	Flag for self-heating calculation
rth	0.0	no	Thermal resistance (K/W)
cth	0.0	no	Thermal capacitance (Ws/K)
tnom	27	no	Temperature for which parameters are valid (C)
dt	0.0	no	Temperature change for particular transistor (K)
Temp	26.85	no	simulation temperature

Pnp Hicum L0 V1.12¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	pnp HICUM L0 v1.12
Descripció	HICUM Level 0 v1.12 verilog device
Schematic entry	`hic0_full`
Netlist entry	`T`
Tipus	AnalogComponent
Bitmap file	pnpsub_therm
Propietats	86
Category	verilog-a devices

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Tipus	pnp	Si	polarity [npn, pnp]
is	1.0e-16	no	(Modified) saturation current (A)
mcf	1.00	no	Non-ideality coefficient of forward collector current
mcr	1.00	no	Non-ideality coefficient of reverse collector current
vef	1.0e6	no	forward Early voltage (normalization volt.) (V)
iqf	1.0e6	no	forward d.c. high-injection roll-off current (A)
iqr	1.0e6	no	inverse d.c. high-injection roll-off current (A)
iqfh	1.0e6	no	high-injection correction current (A)
tfh	1.0e6	no	high-injection correction factor
ibes	1e-18	no	BE saturation current (A)
mbe	1.0	no	BE non-ideality factor
ires	0.0	no	BE recombination saturation current (A)
mre	2.0	no	BE recombination non-ideality factor
ibcs	0.0	no	BC saturation current (A)
mbc	1.0	no	BC non-ideality factor
cje0	1.0e-20	no	Zero-bias BE depletion capacitance (F)
vde	0.9	no	BE built-in voltage (V)
ze	0.5	no	BE exponent factor
aje	2.5	no	Ratio of maximum to zero-bias value
t0	0.0	no	low current transit time at Vbici=0 (s)
dt0h	0.0	no	Base width modulation contribution (s)
tbvl	0.0	no	SCR width modulation contribution (s)
tef0	0.0	no	Storage time in neutral emitter (s)
gte	1.0	no	Exponent factor for emitter transit time
thcs	0.0	no	Saturation time at high current densities (s)
ahc	0.1	no	Smoothing factor for current dependence
tr	0.0	no	Storage time at inverse operation (s)
rci0	150	no	Low-field collector resistance under emitter (Ohm)
vlim	0.5	no	Voltage dividing ohmic and satur.region (V)
vpt	100	no	Punch-through voltage (V)
vces	0.1	no	Saturation voltage (V)
cjci0	1.0e-20	no	Total zero-bias BC depletion capacitance (F)
vdci	0.7	no	BC built-in voltage (V)
zci	0.333	no	BC exponent factor
vptci	100	no	Punch-through voltage of BC junction (V)
cjcx0	1.0e-20	no	Zero-bias external BC depletion capacitance (F)
vdcx	0.7	no	External BC built-in voltage (V)
zcx	0.333	no	External BC exponent factor
vptcx	100	no	Punch-through voltage (V)
fbc	1.0	no	Split factor = Cjci0/Cjc0
rbi0	0.0	no	Internal base resistance at zero-bias (Ohm)
vr0e	2.5	no	forward Early voltage (normalization volt.) (V)
vr0c	1.0e6	no	forward Early voltage (normalization volt.) (V)
fgeo	0.656	no	Geometry factor
rbx	0.0	no	External base series resistance (Ohm)
rcx	0.0	no	Emitter series resistance (Ohm)
re	0.0	no	External collector series resistance (Ohm)
itss	0.0	no	Substrate transistor transfer saturation current (A)
msf	1.0	no	Substrate transistor transfer current non-ideality factor
iscs	0.0	no	SC saturation current (A)
msc	1.0	no	SC non-ideality factor
cjs0	1.0e-20	no	Zero-bias SC depletion capacitance (F)
vds	0.3	no	SC built-in voltage (V)
zs	0.3	no	External SC exponent factor
vpts	100	no	SC punch-through voltage (V)
cbcpar	0.0	no	Collector-base isolation (overlap) capacitance (F)
cbepar	0.0	no	Emitter-base oxide capacitance (F)
eavl	0.0	no	Exponent factor
kavl	0.0	no	Prefactor
kf	0.0	no	flicker noise coefficient (M^(1-AF))
af	2.0	no	flicker noise exponent factor
vgb	1.2	no	Bandgap-voltage (V)
vge	1.17	no	Effective emitter bandgap-voltage (V)
vgc	1.17	no	Effective collector bandgap-voltage (V)
vgs	1.17	no	Effective substrate bandgap-voltage (V)
f1vg	-1.02377e-4	no	Coefficient K1 in T-dependent bandgap equation (V/K)
f2vg	4.3215e-4	no	Coefficient K2 in T-dependent bandgap equation (V/K)
alt0	0.0	no	Frist-order TC of tf0 (1/K)
kt0	0.0	no	Second-order TC of tf0 (1/K^2)
zetact	3.0	no	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	no	Exponent coefficient in BE junction current temperature dependence
zetaci	0.0	no	TC of epi-collector diffusivity
alvs	0.0	no	Relative TC of satur.drift velocity (1/K)
alces	0.0	no	Relative TC of vces (1/K)
zetarbi	0.0	no	TC of internal base resistance
zetarbx	0.0	no	TC of external base resistance
zetarcx	0.0	no	TC of external collector resistance
zetare	0.0	no	TC of emitter resistances
alkav	0.0	no	TC of avalanche prefactor (1/K)
aleav	0.0	no	TC of avalanche exponential factor (1/K)
flsh	0	no	Flag for self-heating calculation
rth	0.0	no	Thermal resistance (K/W)
cth	0.0	no	Thermal capacitance (Ws/K)
tnom	27	no	Temperature for which parameters are valid (C)
dt	0.0	no	Temperature change for particular transistor (K)
Temp	26.85	no	simulation temperature

Potentiometer¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Potentiometer
Descripció	Potentiometer verilog device
Schematic entry	`potentiometer`
Netlist entry	`POT`
Tipus	AnalogComponent
Bitmap file	potentiometer
Propietats	11
Category	verilog-a devices

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
R_pot	1e4	no	nominal device resistance (Ohm)
Rotation	120	no	shaft/wiper arm rotation (degrees)
Taper_Coeff	0	no	resistive law taper coefficient
LEVEL	1	no	device type selector [1, 2, 3]
Max_Rotation	240.0	no	maximum shaft/wiper rotation (degrees)
Conformity	0.2	no	conformity error (%)
Linearity	0.2	no	linearity error (%)
Contact_Res	1	no	wiper arm contact resistance (Ohm)
Temp_Coeff	100	no	resistance temperature coefficient (PPM/Celsius)
Tnom	26.85	no	parameter measurement temperature (Celsius)
Temp	26.85	no	simulation temperature

Mesfet¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	MESFET
Descripció	MESFET verilog device
Schematic entry	`MESFET`
Netlist entry	`T`
Tipus	AnalogComponent
Bitmap file	MESFET
Propietats	52
Category	verilog-a devices

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
LEVEL	1	no	model selector
Vto	-1.8	no	pinch-off voltage (V)
Beta	3e-3	no	transconductance parameter (A/(V*V))
Alpha	2.25	no	saturation voltage parameter (1/V)
Lambda	0.05	no	channel length modulation parameter (1/V)
B	0.3	no	doping profile parameter (1/V)
Qp	2.1	no	power law exponent parameter
Delta	0.1	no	power feedback parameter (1/W)
Vmax	0.5	no	maximum junction voltage limit before capacitance limiting (V)
Vdelta1	0.3	no	capacitance saturation transition voltage (V)
Vdelta2	0.2	no	capacitance threshold transition voltage (V)
Gamma	0.015	no	dc drain pull coefficient
Nsc	1	no	subthreshold conductance parameter
Is	1e-14	no	diode saturation current (I)
N	1	no	diode emission coefficient
Vbi	1.0	no	built-in gate potential (V)
Bv	60	no	gate-drain junction reverse bias breakdown voltage (V)
Xti	3.0	no	diode saturation current temperature coefficient
Fc	0.5	no	coeficiente de pérdida de capacidad en polarización directa
Tau	1e-9	no	transit time under gate (s)
Rin	1e-3	no	channel resistance (Ohm)
Area	1	no	area factor
Eg	1.11	no	energy gap (eV)
M	0.5	no	coeficiente de graduación
Cgd	0.2e-12	no	zero bias gate-drain junction capacitance (F)
Cgs	1e-12	no	zero bias gate-source junction capacitance (F)
Cds	1e-12	no	zero bias drain-source junction capacitance (F)
Betatc	0	no	Beta temperature coefficient (%/Celsius)
Alphatc	0	no	Alpha temperature coefficient (%/Celsius)
Gammatc	0	no	Gamma temperature coefficient (%/Celsius)
Ng	2.65	no	Subthreshold slope gate parameter
Nd	-0.19	no	subthreshold drain pull parameter
ILEVELS	3	no	gate-source current equation selector
ILEVELD	3	no	gate-drain current equation selector
QLEVELS	2	no	gate-source charge equation selector
QLEVELD	2	no	gate-drain charge equation selector
QLEVELDS	2	no	drain-source charge equation selector
Vtotc	0	no	Vto temperature coefficient
Rg	5.1	no	gate resistance (Ohms)
Rd	1.3	no	drain resistance (Ohms)
Rs	1.3	no	source resistance (Ohms)
Rgtc	0	no	gate resistance temperature coefficient (1/Celsius)
Rdtc	0	no	drain resistance temperature coefficient (1/Celsius)
Rstc	0	no	source resistance temperature coefficient (1/Celsius)
Ibv	1e-3	no	gate reverse breakdown currrent (A)
Rf	10	no	forward bias slope resistance (Ohms)
R1	10	no	breakdown slope resistance (Ohms)
Af	1	no	exponente de ruido térmico
Kf	0	no	coeficiente de ruido térmico
Gdsnoi	1	no	shot noise coefficient
Tnom	26.85	no	parameter measurement temperature (Celsius)
Temp	26.85	no	simulation temperature

Epfl-Ekv Nmos 2.6¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	EPFL-EKV NMOS 2.6
Descripció	EPFL-EKV MOS 2.6 verilog device
Schematic entry	`EKV26MOS`
Netlist entry	`M`
Tipus	AnalogComponent
Bitmap file	EKV26nMOS
Propietats	55
Category	verilog-a devices

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Tipus	nmos	Si	polarity [nmos, pmos]
LEVEL	1	no	long = 1, short = 2
L	0.5e-6	no	length parameter (m)
W	10e-6	no	Width parameter (m)
Np	1.0	no	parallel multiple device number
Ns	1.0	no	series multiple device number
Cox	3.45e-3	no	gate oxide capacitance per unit area (F/m**2)
Xj	0.15e-6	no	metallurgical junction depth (m)
Dw	-0.02e-6	no	channel width correction (m)
Dl	-0.05e-6	no	channel length correction (m)
Vto	0.6	no	long channel threshold voltage (V)
Gamma	0.71	no	body effect parameter (V**(1/2))
Phi	0.97	no	bulk Fermi potential (V)
Kp	150e-6	no	transconductance parameter (A/V**2)
Theta	50e-3	no	mobility reduction coefficient (1/V)
EO	88.0e6	no	mobility coefficient (V/m)
Ucrit	4.5e6	no	longitudinal critical field (V/m)
Lambda	0.23	no	depletion length coefficient
Weta	0.05	no	narrow-channel effect coefficient
Leta	0.28	no	longitudinal critical field
Q0	280e-6	no	reverse short channel charge density (As/m*2)
Lk	0.5e-6	no	characteristic length (m)
Tcv	1.5e-3	no	threshold voltage temperature coefficient (V/K)
Bex	-1.5	no	mobility temperature coefficient
Ucex	1.7	no	Longitudinal critical field temperature exponent
Ibbt	0.0	no	Ibb temperature coefficient (1/K)
Hdif	0.9e-6	no	heavily doped diffusion length (m)
Rsh	510.0	no	drain/source diffusion sheet resistance (Ohm/square)
Rsc	0.0	no	source contact resistance (Ohm)
Rdc	0.0	no	drain contact resistance (Ohm)
Cgso	1.5e-10	no	gate to source overlap capacitance (F/m)
Cgdo	1.5e-10	no	gate to drain overlap capacitance (F/m)
Cgbo	4.0e-10	no	gate to bulk overlap capacitance (F/m)
Iba	2e8	no	first impact ionization coefficient (1/m)
Ibb	3.5e8	no	second impact ionization coefficient (V/m)
Ibn	1.0	no	saturation voltage factor for impact ionization
Kf	1.0e-27	no	coeficiente de ruido térmico
Af	1.0	no	exponente de ruido térmico
Avto	0.0	no	area related theshold voltage mismatch parameter (V*m)
Akp	0.0	no	area related gain mismatch parameter (m)
Agamma	0.0	no	area related body effect mismatch parameter (sqrt(V)*m)
N	1.0	no	coeficiente de emisión
Is	1e-14	no	saturation current (A)
Bv	100	no	reverse breakdown voltage (V)
Ibv	1e-3	no	current at reverse breakdown voltage (A)
Vj	1.0	no	junction potential (V)
Cj0	300e-15	no	zero-bias junction capacitance (F)
M	0.5	no	coeficiente de graduación
Area	1.0	no	diode relative area
Fc	0.5	no	coeficiente de pérdida de capacidad en polarización directa
Tt	0.1e-9	no	transit time (s)
Xti	3.0	no	exponente de temperatura de la corriente de saturación
Xpart	0.4	no	charge partition parameter
Tnom	26.85	no	parameter measurement temperature (Celsius)
Temp	26.85	no	simulation temperature

Epfl-Ekv Pmos 2.6¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	EPFL-EKV PMOS 2.6
Descripció	EPFL-EKV MOS 2.6 verilog device
Schematic entry	`EKV26MOS`
Netlist entry	`M`
Tipus	AnalogComponent
Bitmap file	EKV26pMOS
Propietats	55
Category	verilog-a devices

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Tipus	pmos	Si	polarity [nmos, pmos]
LEVEL	1	no	long = 1, short = 2
L	0.5e-6	no	length parameter (m)
W	10e-6	no	Width parameter (m)
Np	1.0	no	parallel multiple device number
Ns	1.0	no	series multiple device number
Cox	3.45e-3	no	gate oxide capacitance per unit area (F/m**2)
Xj	0.15e-6	no	metallurgical junction depth (m)
Dw	-0.03e-6	no	channel width correction (m)
Dl	-0.05e-6	no	channel length correction (m)
Vto	-0.55	no	long channel threshold voltage (V)
Gamma	0.69	no	body effect parameter (V**(1/2))
Phi	0.87	no	bulk Fermi potential (V)
Kp	35e-6	no	transconductance parameter (A/V**2)
Theta	50e-3	no	mobility reduction coefficient (1/V)
EO	51.0e6	no	mobility coefficient (V/m)
Ucrit	18.0e6	no	longitudinal critical field (V/m)
Lambda	1.1	no	depletion length coefficient
Weta	0.0	no	narrow-channel effect coefficient
Leta	0.45	no	longitudinal critical field
Q0	200e-6	no	reverse short channel charge density (As/m*2)
Lk	0.6e-6	no	characteristic length (m)
Tcv	-1.4e-3	no	threshold voltage temperature coefficient (V/K)
Bex	-1.4	no	mobility temperature coefficient
Ucex	2.0	no	Longitudinal critical field temperature exponent
Ibbt	0.0	no	Ibb temperature coefficient (1/K)
Hdif	0.9e-6	no	heavily doped diffusion length (m)
Rsh	990.0	no	drain/source diffusion sheet resistance (Ohm/square)
Rsc	0.0	no	source contact resistance (Ohm)
Rdc	0.0	no	drain contact resistance (Ohm)
Cgso	1.5e-10	no	gate to source overlap capacitance (F/m)
Cgdo	1.5e-10	no	gate to drain overlap capacitance (F/m)
Cgbo	4.0e-10	no	gate to bulk overlap capacitance (F/m)
Iba	0.0	no	first impact ionization coefficient (1/m)
Ibb	3.0e8	no	second impact ionization coefficient (V/m)
Ibn	1.0	no	saturation voltage factor for impact ionization
Kf	1.0e-28	no	coeficiente de ruido térmico
Af	1.0	no	exponente de ruido térmico
Avto	0.0	no	area related theshold voltage mismatch parameter (V*m)
Akp	0.0	no	area related gain mismatch parameter (m)
Agamma	0.0	no	area related body effect mismatch parameter (sqrt(V)*m)
N	1.0	no	coeficiente de emisión
Is	1e-14	no	saturation current (A)
Bv	100	no	reverse breakdown voltage (V)
Ibv	1e-3	no	current at reverse breakdown voltage (A)
Vj	1.0	no	junction potential (V)
Cj0	300e-15	no	zero-bias junction capacitance (F)
M	0.5	no	coeficiente de graduación
Area	1.0	no	diode relative area
Fc	0.5	no	coeficiente de pérdida de capacidad en polarización directa
Tt	0.1e-9	no	transit time (s)
Xti	3.0	no	exponente de temperatura de la corriente de saturación
Xpart	0.4	no	charge partition parameter
Tnom	26.85	no	parameter measurement temperature (Celsius)
Temp	26.85	no	simulation temperature

Bsim3V34Nmos¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	bsim3v34nMOS
Descripció	bsim3v34nMOS verilog device
Schematic entry	`bsim3v34nMOS`
Netlist entry	`BSIM3_`
Tipus	AnalogComponent
Bitmap file	bsim3v34nMOS
Propietats	408
Category	verilog-a devices

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
L	0.35e-6	no	-
W	5.0e-6	no	-
PS	8.0e-6	no	-
PD	8.0e-6	no	-
AS	12.0e-12	no	-
AD	12.0e-12	no	-
NRS	10.0	no	-
NRD	10.0	no	-
NQSMOD	0	no	-
GMIN	1e-12	no	-
VERSION	3.24	no	-
PARAMCHK	0	no	-
MOBMOD	1	no	-
CAPMOD	3	no	-
NOIMOD	4	no	-
BINUNIT	1	no	-
TOX	150.0e-10	no	-
TOXM	150.0e-10	no	-
CDSC	2.4e-4	no	-
CDSCB	0.0	no	-
CDSCD	0.0	no	-
CIT	0.0	no	-
NFACTOR	1	no	-
XJ	0.15e-6	no	-
VSAT	8.0e4	no	-
AT	3.3e4	no	-
A0	1.0	no	-
AGS	0.0	no	-
A1	0.0	no	-
A2	1.0	no	-
KETA	-0.047	no	-
NSUB	-99.0	no	-
NCH	-99.0	no	-
NGATE	0	no	-
GAMMA1	-99.0	no	-
GAMMA2	-99.0	no	-
VBX	-99.0	no	-
VBM	-3.0	no	-
XT	-99.0	no	-
K1	-99.0	no	-
KT1	-0.11	no	-
KT1L	0.0	no	-
KT2	0.022	no	-
K2	-99.0	no	-
K3	80.0	no	-
K3B	0.0	no	-
W0	2.5e-6	no	-
NLX	1.74e-7	no	-
DVT0	2.2	no	-
DVT1	0.53	no	-
DVT2	-0.032	no	-
DVT0W	0.0	no	-
DVT1W	5.3e6	no	-
DVT2W	-0.032	no	-
DROUT	0.56	no	-
DSUB	0.56	no	-
VTHO	0.7	no	-
VTH0	0.7	no	-
UA	2.25e-9	no	-
UA1	4.31e-9	no	-
UB	5.87e-19	no	-
UB1	-7.61e-18	no	-
UC	-99.0	no	-
UC1	-99.0	no	-
U0	-99.0	no	-
UTE	-1.5	no	-
VOFF	-0.08	no	-
TNOM	26.85	no	-
CGSO	-99.0	no	-
CGDO	-99.0	no	-
CGBO	-99.0	no	-
XPART	0.4	no	-
ELM	5.0	no	-
DELTA	0.01	no	-
RSH	0.0	no	-
RDSW	0	no	-
PRWG	0.0	no	-
PRWB	0.0	no	-
PRT	0.0	no	-
ETA0	0.08	no	-
ETAB	-0.07	no	-
PCLM	1.3	no	-
PDIBLC1	0.39	no	-
PDIBLC2	0.0086	no	-
PDIBLCB	0.0	no	-
PSCBE1	4.24e8	no	-
PSCBE2	1.0e-5	no	-
PVAG	0.0	no	-
JS	1.0E-4	no	-
JSW	0.0	no	-
PB	1.0	no	-
NJ	1.0	no	-
XTI	3.0	no	-
MJ	0.5	no	-
PBSW	1.0	no	-
MJSW	0.33	no	-
PBSWG	1.0	no	-
MJSWG	0.33	no	-
CJ	5.0E-4	no	-
VFBCV	-1.0	no	-
VFB	-99.0	no	-
CJSW	5.0E-10	no	-
CJSWG	5.0e-10	no	-
TPB	0.0	no	-
TCJ	0.0	no	-
TPBSW	0.0	no	-
TCJSW	0.0	no	-
TPBSWG	0.0	no	-
TCJSWG	0.0	no	-
ACDE	1.0	no	-
MOIN	15.0	no	-
NOFF	1.0	no	-
VOFFCV	0.0	no	-
LINT	0.0	no	-
LL	0.0	no	-
LLC	0.0	no	-
LLN	1.0	no	-
LW	0.0	no	-
LWC	0.0	no	-
LWN	1.0	no	-
LWL	0.0	no	-
LWLC	0.0	no	-
LMIN	0.0	no	-
LMAX	1.0	no	-
WR	1.0	no	-
WINT	0.0	no	-
DWG	0.0	no	-
DWB	0.0	no	-
WL	0.0	no	-
WLC	0.0	no	-
WLN	1.0	no	-
WW	0.0	no	-
WWC	0.0	no	-
WWN	1.0	no	-
WWL	0.0	no	-
WWLC	0.0	no	-
WMIN	0.0	no	-
WMAX	1.0	no	-
B0	0.0	no	-
B1	0.0	no	-
CGSL	0.0	no	-
CGDL	0.0	no	-
CKAPPA	0.6	no	-
CF	-99.0	no	-
CLC	0.1e-6	no	-
CLE	0.6	no	-
DWC	0.0	no	-
DLC	-99.0	no	-
ALPHA0	0.0	no	-
ALPHA1	0.0	no	-
BETA0	30.0	no	-
IJTH	0.1	no	-
LCDSC	0.0	no	-
LCDSCB	0.0	no	-
LCDSCD	0.0	no	-
LCIT	0.0	no	-
LNFACTOR	0.0	no	-
LXJ	0.0	no	-
LVSAT	0.0	no	-
LAT	0.0	no	-
LA0	0.0	no	-
LAGS	0.0	no	-
LA1	0.0	no	-
LA2	0.0	no	-
LKETA	0.0	no	-
LNSUB	0.0	no	-
LNCH	0.0	no	-
LNGATE	0.0	no	-
LGAMMA1	-99.0	no	-
LGAMMA2	-99.0	no	-
LVBX	-99.0	no	-
LVBM	0.0	no	-
LXT	0.0	no	-
LK1	-99.0	no	-
LKT1	0.0	no	-
LKT1L	0.0	no	-
LKT2	0.0	no	-
LK2	-99.0	no	-
LK3	0.0	no	-
LK3B	0.0	no	-
LW0	0.0	no	-
LNLX	0.0	no	-
LDVT0	0.0	no	-
LDVT1	0.0	no	-
LDVT2	0.0	no	-
LDVT0W	0.0	no	-
LDVT1W	0.0	no	-
LDVT2W	0.0	no	-
LDROUT	0.0	no	-
LDSUB	0.0	no	-
LVTH0	0.0	no	-
LVTHO	0.0	no	-
LUA	0.0	no	-
LUA1	0.0	no	-
LUB	0.0	no	-
LUB1	0.0	no	-
LUC	0.0	no	-
LUC1	0.0	no	-
LU0	0.0	no	-
LUTE	0.0	no	-
LVOFF	0.0	no	-
LELM	0.0	no	-
LDELTA	0.0	no	-
LRDSW	0.0	no	-
LPRWG	0.0	no	-
LPRWB	0.0	no	-
LPRT	0.0	no	-
LETA0	0.0	no	-
LETAB	0.0	no	-
LPCLM	0.0	no	-
LPDIBLC1	0.0	no	-
LPDIBLC2	0.0	no	-
LPDIBLCB	0.0	no	-
LPSCBE1	0.0	no	-
LPSCBE2	0.0	no	-
LPVAG	0.0	no	-
LWR	0.0	no	-
LDWG	0.0	no	-
LDWB	0.0	no	-
LB0	0.0	no	-
LB1	0.0	no	-
LCGSL	0.0	no	-
LCGDL	0.0	no	-
LCKAPPA	0.0	no	-
LCF	0.0	no	-
LCLC	0.0	no	-
LCLE	0.0	no	-
LALPHA0	0.0	no	-
LALPHA1	0.0	no	-
LBETA0	0.0	no	-
LVFBCV	0.0	no	-
LVFB	0.0	no	-
LACDE	0.0	no	-
LMOIN	0.0	no	-
LNOFF	0.0	no	-
LVOFFCV	0.0	no	-
WCDSC	0.0	no	-
WCDSCB	0.0	no	-
WCDSCD	0.0	no	-
WCIT	0.0	no	-
WNFACTOR	0.0	no	-
WXJ	0.0	no	-
WVSAT	0.0	no	-
WAT	0.0	no	-
WA0	0.0	no	-
WAGS	0.0	no	-
WA1	0.0	no	-
WA2	0.0	no	-
WKETA	0.0	no	-
WNSUB	0.0	no	-
WNCH	0.0	no	-
WNGATE	0.0	no	-
WGAMMA1	-99.0	no	-
WGAMMA2	-99.0	no	-
WVBX	-99.0	no	-
WVBM	0.0	no	-
WXT	0.0	no	-
WK1	-99.0	no	-
WKT1	0.0	no	-
WKT1L	0.0	no	-
WKT2	0.0	no	-
WK2	-99.0	no	-
WK3	0.0	no	-
WK3B	0.0	no	-
WW0	0.0	no	-
WNLX	0.0	no	-
WDVT0	0.0	no	-
WDVT1	0.0	no	-
WDVT2	0.0	no	-
WDVT0W	0.0	no	-
WDVT1W	0.0	no	-
WDVT2W	0.0	no	-
WDROUT	0.0	no	-
WDSUB	0.0	no	-
WVTH0	0.0	no	-
WVTHO	0.0	no	-
WUA	0.0	no	-
WUA1	0.0	no	-
WUB	0.0	no	-
WUB1	0.0	no	-
WUC	0.0	no	-
WUC1	0.0	no	-
WU0	0.0	no	-
WUTE	0.0	no	-
WVOFF	0.0	no	-
WELM	0.0	no	-
WDELTA	0.0	no	-
WRDSW	0.0	no	-
WPRWG	0.0	no	-
WPRWB	0.0	no	-
WPRT	0.0	no	-
WETA0	0.0	no	-
WETAB	0.0	no	-
WPCLM	0.0	no	-
WPDIBLC1	0.0	no	-
WPDIBLC2	0.0	no	-
WPDIBLCB	0.0	no	-
WPSCBE1	0.0	no	-
WPSCBE2	0.0	no	-
WPVAG	0.0	no	-
WWR	0.0	no	-
WDWG	0.0	no	-
WDWB	0.0	no	-
WB0	0.0	no	-
WB1	0.0	no	-
WCGSL	0.0	no	-
WCGDL	0.0	no	-
WCKAPPA	0.0	no	-
WCF	0.0	no	-
WCLC	0.0	no	-
WCLE	0.0	no	-
WALPHA0	0.0	no	-
WALPHA1	0.0	no	-
WBETA0	0.0	no	-
WVFBCV	0.0	no	-
WVFB	0.0	no	-
WACDE	0.0	no	-
WMOIN	0.0	no	-
WNOFF	0.0	no	-
WVOFFCV	0.0	no	-
PCDSC	0.0	no	-
PCDSCB	0.0	no	-
PCDSCD	0.0	no	-
PCIT	0.0	no	-
PNFACTOR	0.0	no	-
PXJ	0.0	no	-
PVSAT	0.0	no	-
PAT	0.0	no	-
PA0	0.0	no	-
PAGS	0.0	no	-
PA1	0.0	no	-
PA2	0.0	no	-
PKETA	0.0	no	-
PNSUB	0.0	no	-
PNCH	0.0	no	-
PNGATE	0.0	no	-
PGAMMA1	-99.0	no	-
PGAMMA2	-99.0	no	-
PVBX	-99.0	no	-
PVBM	0.0	no	-
PXT	0.0	no	-
PK1	-99.0	no	-
PKT1	0.0	no	-
PKT1L	0.0	no	-
PKT2	0.0	no	-
PK2	-99.0	no	-
PK3	0.0	no	-
PK3B	0.0	no	-
PW0	0.0	no	-
PNLX	0.0	no	-
PDVT0	0.0	no	-
PDVT1	0.0	no	-
PDVT2	0.0	no	-
PDVT0W	0.0	no	-
PDVT1W	0.0	no	-
PDVT2W	0.0	no	-
PDROUT	0.0	no	-
PDSUB	0.0	no	-
PVTH0	0.0	no	-
PVTHO	0.0	no	-
PUA	0.0	no	-
PUA1	0.0	no	-
PUB	0.0	no	-
PUB1	0.0	no	-
PUC	0.0	no	-
PUC1	0.0	no	-
PU0	0.0	no	-
PUTE	0.0	no	-
PVOFF	0.0	no	-
PELM	0.0	no	-
PDELTA	0.0	no	-
PRDSW	0.0	no	-
PPRWG	0.0	no	-
PPRWB	0.0	no	-
PPRT	0.0	no	-
PETA0	0.0	no	-
PETAB	0.0	no	-
PPCLM	0.0	no	-
PPDIBLC1	0.0	no	-
PPDIBLC2	0.0	no	-
PPDIBLCB	0.0	no	-
PPSCBE1	0.0	no	-
PPSCBE2	0.0	no	-
PPVAG	0.0	no	-
PWR	0.0	no	-
PDWG	0.0	no	-
PDWB	0.0	no	-
PB0	0.0	no	-
PB1	0.0	no	-
PCGSL	0.0	no	-
PCGDL	0.0	no	-
PCKAPPA	0.0	no	-
PCF	0.0	no	-
PCLC	0.0	no	-
PCLE	0.0	no	-
PALPHA0	0.0	no	-
PALPHA1	0.0	no	-
PBETA0	0.0	no	-
PVFBCV	0.0	no	-
PVFB	0.0	no	-
PACDE	0.0	no	-
PMOIN	0.0	no	-
PNOFF	0.0	no	-
PVOFFCV	0.0	no	-
KF	0.0	no	-
AF	1.0	no	-
EF	1.0	no	-
Temp	26.85	no	simulation temperature

Bsim3V34Pmos¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	bsim3v34pMOS
Descripció	bsim3v34pMOS verilog device
Schematic entry	`bsim3v34pMOS`
Netlist entry	`BSIM3_`
Tipus	AnalogComponent
Bitmap file	bsim3v34pMOS
Propietats	408
Category	verilog-a devices

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
L	3.5e-6	no	-
W	5.0e-6	no	-
PS	8.0e-6	no	-
PD	8.0e-6	no	-
AS	12.0e-12	no	-
AD	12.0e-12	no	-
NRS	10.0	no	-
NRD	10.0	no	-
NQSMOD	0	no	-
GMIN	1e-12	no	-
VERSION	3.24	no	-
PARAMCHK	0	no	-
MOBMOD	1	no	-
CAPMOD	3	no	-
NOIMOD	4	no	-
BINUNIT	1	no	-
TOX	150.0e-10	no	-
TOXM	150.0e-10	no	-
CDSC	2.4e-4	no	-
CDSCB	0.0	no	-
CDSCD	0.0	no	-
CIT	0.0	no	-
NFACTOR	1	no	-
XJ	0.15e-6	no	-
VSAT	8.0e4	no	-
AT	3.3e4	no	-
A0	1.0	no	-
AGS	0.0	no	-
A1	0.0	no	-
A2	1.0	no	-
KETA	-0.047	no	-
NSUB	-99.0	no	-
NCH	-99.0	no	-
NGATE	0	no	-
GAMMA1	-99.0	no	-
GAMMA2	-99.0	no	-
VBX	-99.0	no	-
VBM	-3.0	no	-
XT	-99.0	no	-
K1	-99.0	no	-
KT1	-0.11	no	-
KT1L	0.0	no	-
KT2	0.022	no	-
K2	-99.0	no	-
K3	80.0	no	-
K3B	0.0	no	-
W0	2.5e-6	no	-
NLX	1.74e-7	no	-
DVT0	2.2	no	-
DVT1	0.53	no	-
DVT2	-0.032	no	-
DVT0W	0.0	no	-
DVT1W	5.3e6	no	-
DVT2W	-0.032	no	-
DROUT	0.56	no	-
DSUB	0.56	no	-
VTHO	-0.7	no	-
VTH0	-0.7	no	-
UA	2.25e-9	no	-
UA1	4.31e-9	no	-
UB	5.87e-19	no	-
UB1	-7.61e-18	no	-
UC	-99.0	no	-
UC1	-99.0	no	-
U0	-99.0	no	-
UTE	-1.5	no	-
VOFF	-0.08	no	-
TNOM	26.85	no	-
CGSO	-99.0	no	-
CGDO	-99.0	no	-
CGBO	-99.0	no	-
XPART	0.4	no	-
ELM	5.0	no	-
DELTA	0.01	no	-
RSH	0.0	no	-
RDSW	0	no	-
PRWG	0.0	no	-
PRWB	0.0	no	-
PRT	0.0	no	-
ETA0	0.08	no	-
ETAB	-0.07	no	-
PCLM	1.3	no	-
PDIBLC1	0.39	no	-
PDIBLC2	0.0086	no	-
PDIBLCB	0.0	no	-
PSCBE1	4.24e8	no	-
PSCBE2	1.0e-5	no	-
PVAG	0.0	no	-
JS	1.0E-4	no	-
JSW	0.0	no	-
PB	1.0	no	-
NJ	1.0	no	-
XTI	3.0	no	-
MJ	0.5	no	-
PBSW	1.0	no	-
MJSW	0.33	no	-
PBSWG	1.0	no	-
MJSWG	0.33	no	-
CJ	5.0E-4	no	-
VFBCV	-1.0	no	-
VFB	-99.0	no	-
CJSW	5.0E-10	no	-
CJSWG	5.0e-10	no	-
TPB	0.0	no	-
TCJ	0.0	no	-
TPBSW	0.0	no	-
TCJSW	0.0	no	-
TPBSWG	0.0	no	-
TCJSWG	0.0	no	-
ACDE	1.0	no	-
MOIN	15.0	no	-
NOFF	1.0	no	-
VOFFCV	0.0	no	-
LINT	0.0	no	-
LL	0.0	no	-
LLC	0.0	no	-
LLN	1.0	no	-
LW	0.0	no	-
LWC	0.0	no	-
LWN	1.0	no	-
LWL	0.0	no	-
LWLC	0.0	no	-
LMIN	0.0	no	-
LMAX	1.0	no	-
WR	1.0	no	-
WINT	0.0	no	-
DWG	0.0	no	-
DWB	0.0	no	-
WL	0.0	no	-
WLC	0.0	no	-
WLN	1.0	no	-
WW	0.0	no	-
WWC	0.0	no	-
WWN	1.0	no	-
WWL	0.0	no	-
WWLC	0.0	no	-
WMIN	0.0	no	-
WMAX	1.0	no	-
B0	0.0	no	-
B1	0.0	no	-
CGSL	0.0	no	-
CGDL	0.0	no	-
CKAPPA	0.6	no	-
CF	-99.0	no	-
CLC	0.1e-6	no	-
CLE	0.6	no	-
DWC	0.0	no	-
DLC	-99.0	no	-
ALPHA0	0.0	no	-
ALPHA1	0.0	no	-
BETA0	30.0	no	-
IJTH	0.1	no	-
LCDSC	0.0	no	-
LCDSCB	0.0	no	-
LCDSCD	0.0	no	-
LCIT	0.0	no	-
LNFACTOR	0.0	no	-
LXJ	0.0	no	-
LVSAT	0.0	no	-
LAT	0.0	no	-
LA0	0.0	no	-
LAGS	0.0	no	-
LA1	0.0	no	-
LA2	0.0	no	-
LKETA	0.0	no	-
LNSUB	0.0	no	-
LNCH	0.0	no	-
LNGATE	0.0	no	-
LGAMMA1	-99.0	no	-
LGAMMA2	-99.0	no	-
LVBX	-99.0	no	-
LVBM	0.0	no	-
LXT	0.0	no	-
LK1	-99.0	no	-
LKT1	0.0	no	-
LKT1L	0.0	no	-
LKT2	0.0	no	-
LK2	-99.0	no	-
LK3	0.0	no	-
LK3B	0.0	no	-
LW0	0.0	no	-
LNLX	0.0	no	-
LDVT0	0.0	no	-
LDVT1	0.0	no	-
LDVT2	0.0	no	-
LDVT0W	0.0	no	-
LDVT1W	0.0	no	-
LDVT2W	0.0	no	-
LDROUT	0.0	no	-
LDSUB	0.0	no	-
LVTH0	0.0	no	-
LVTHO	0.0	no	-
LUA	0.0	no	-
LUA1	0.0	no	-
LUB	0.0	no	-
LUB1	0.0	no	-
LUC	0.0	no	-
LUC1	0.0	no	-
LU0	0.0	no	-
LUTE	0.0	no	-
LVOFF	0.0	no	-
LELM	0.0	no	-
LDELTA	0.0	no	-
LRDSW	0.0	no	-
LPRWG	0.0	no	-
LPRWB	0.0	no	-
LPRT	0.0	no	-
LETA0	0.0	no	-
LETAB	0.0	no	-
LPCLM	0.0	no	-
LPDIBLC1	0.0	no	-
LPDIBLC2	0.0	no	-
LPDIBLCB	0.0	no	-
LPSCBE1	0.0	no	-
LPSCBE2	0.0	no	-
LPVAG	0.0	no	-
LWR	0.0	no	-
LDWG	0.0	no	-
LDWB	0.0	no	-
LB0	0.0	no	-
LB1	0.0	no	-
LCGSL	0.0	no	-
LCGDL	0.0	no	-
LCKAPPA	0.0	no	-
LCF	0.0	no	-
LCLC	0.0	no	-
LCLE	0.0	no	-
LALPHA0	0.0	no	-
LALPHA1	0.0	no	-
LBETA0	0.0	no	-
LVFBCV	0.0	no	-
LVFB	0.0	no	-
LACDE	0.0	no	-
LMOIN	0.0	no	-
LNOFF	0.0	no	-
LVOFFCV	0.0	no	-
WCDSC	0.0	no	-
WCDSCB	0.0	no	-
WCDSCD	0.0	no	-
WCIT	0.0	no	-
WNFACTOR	0.0	no	-
WXJ	0.0	no	-
WVSAT	0.0	no	-
WAT	0.0	no	-
WA0	0.0	no	-
WAGS	0.0	no	-
WA1	0.0	no	-
WA2	0.0	no	-
WKETA	0.0	no	-
WNSUB	0.0	no	-
WNCH	0.0	no	-
WNGATE	0.0	no	-
WGAMMA1	-99.0	no	-
WGAMMA2	-99.0	no	-
WVBX	-99.0	no	-
WVBM	0.0	no	-
WXT	0.0	no	-
WK1	-99.0	no	-
WKT1	0.0	no	-
WKT1L	0.0	no	-
WKT2	0.0	no	-
WK2	-99.0	no	-
WK3	0.0	no	-
WK3B	0.0	no	-
WW0	0.0	no	-
WNLX	0.0	no	-
WDVT0	0.0	no	-
WDVT1	0.0	no	-
WDVT2	0.0	no	-
WDVT0W	0.0	no	-
WDVT1W	0.0	no	-
WDVT2W	0.0	no	-
WDROUT	0.0	no	-
WDSUB	0.0	no	-
WVTH0	0.0	no	-
WVTHO	0.0	no	-
WUA	0.0	no	-
WUA1	0.0	no	-
WUB	0.0	no	-
WUB1	0.0	no	-
WUC	0.0	no	-
WUC1	0.0	no	-
WU0	0.0	no	-
WUTE	0.0	no	-
WVOFF	0.0	no	-
WELM	0.0	no	-
WDELTA	0.0	no	-
WRDSW	0.0	no	-
WPRWG	0.0	no	-
WPRWB	0.0	no	-
WPRT	0.0	no	-
WETA0	0.0	no	-
WETAB	0.0	no	-
WPCLM	0.0	no	-
WPDIBLC1	0.0	no	-
WPDIBLC2	0.0	no	-
WPDIBLCB	0.0	no	-
WPSCBE1	0.0	no	-
WPSCBE2	0.0	no	-
WPVAG	0.0	no	-
WWR	0.0	no	-
WDWG	0.0	no	-
WDWB	0.0	no	-
WB0	0.0	no	-
WB1	0.0	no	-
WCGSL	0.0	no	-
WCGDL	0.0	no	-
WCKAPPA	0.0	no	-
WCF	0.0	no	-
WCLC	0.0	no	-
WCLE	0.0	no	-
WALPHA0	0.0	no	-
WALPHA1	0.0	no	-
WBETA0	0.0	no	-
WVFBCV	0.0	no	-
WVFB	0.0	no	-
WACDE	0.0	no	-
WMOIN	0.0	no	-
WNOFF	0.0	no	-
WVOFFCV	0.0	no	-
PCDSC	0.0	no	-
PCDSCB	0.0	no	-
PCDSCD	0.0	no	-
PCIT	0.0	no	-
PNFACTOR	0.0	no	-
PXJ	0.0	no	-
PVSAT	0.0	no	-
PAT	0.0	no	-
PA0	0.0	no	-
PAGS	0.0	no	-
PA1	0.0	no	-
PA2	0.0	no	-
PKETA	0.0	no	-
PNSUB	0.0	no	-
PNCH	0.0	no	-
PNGATE	0.0	no	-
PGAMMA1	-99.0	no	-
PGAMMA2	-99.0	no	-
PVBX	-99.0	no	-
PVBM	0.0	no	-
PXT	0.0	no	-
PK1	-99.0	no	-
PKT1	0.0	no	-
PKT1L	0.0	no	-
PKT2	0.0	no	-
PK2	-99.0	no	-
PK3	0.0	no	-
PK3B	0.0	no	-
PW0	0.0	no	-
PNLX	0.0	no	-
PDVT0	0.0	no	-
PDVT1	0.0	no	-
PDVT2	0.0	no	-
PDVT0W	0.0	no	-
PDVT1W	0.0	no	-
PDVT2W	0.0	no	-
PDROUT	0.0	no	-
PDSUB	0.0	no	-
PVTH0	0.0	no	-
PVTHO	0.0	no	-
PUA	0.0	no	-
PUA1	0.0	no	-
PUB	0.0	no	-
PUB1	0.0	no	-
PUC	0.0	no	-
PUC1	0.0	no	-
PU0	0.0	no	-
PUTE	0.0	no	-
PVOFF	0.0	no	-
PELM	0.0	no	-
PDELTA	0.0	no	-
PRDSW	0.0	no	-
PPRWG	0.0	no	-
PPRWB	0.0	no	-
PPRT	0.0	no	-
PETA0	0.0	no	-
PETAB	0.0	no	-
PPCLM	0.0	no	-
PPDIBLC1	0.0	no	-
PPDIBLC2	0.0	no	-
PPDIBLCB	0.0	no	-
PPSCBE1	0.0	no	-
PPSCBE2	0.0	no	-
PPVAG	0.0	no	-
PWR	0.0	no	-
PDWG	0.0	no	-
PDWB	0.0	no	-
PB0	0.0	no	-
PB1	0.0	no	-
PCGSL	0.0	no	-
PCGDL	0.0	no	-
PCKAPPA	0.0	no	-
PCF	0.0	no	-
PCLC	0.0	no	-
PCLE	0.0	no	-
PALPHA0	0.0	no	-
PALPHA1	0.0	no	-
PBETA0	0.0	no	-
PVFBCV	0.0	no	-
PVFB	0.0	no	-
PACDE	0.0	no	-
PMOIN	0.0	no	-
PNOFF	0.0	no	-
PVOFFCV	0.0	no	-
KF	0.0	no	-
AF	1.0	no	-
EF	1.0	no	-
Temp	26.85	no	simulation temperature

Bsim4V30Nmos¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	bsim4v30nMOS
Descripció	bsim4v30nMOS verilog device
Schematic entry	`bsim4v30nMOS`
Netlist entry	`BSIM4_`
Tipus	AnalogComponent
Bitmap file	bsim4v30nMOS
Propietats	278
Category	verilog-a devices

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
GMIN	1e-12	no	-
PS	12e-6	no	-
PD	12e-6	no	-
AS	12e-12	no	-
AD	12e-12	no	-
CGBO	-99.0	no	-
CGDO	-99.0	no	-
CGSO	-99.0	no	-
L	3e-6	no	-
W	6e-6	no	-
MOBMOD	-99.0	no	-
RDSMOD	-99.0	no	-
IGCMOD	0	no	-
IGBMOD	0	no	-
CAPMOD	2	no	-
RGATEMOD	2	no	-
RBODYMOD	0	no	-
DIOMOD	1	no	-
TEMPMOD	-99.0	no	-
GEOMOD	0	no	-
RGEOMOD	0	no	-
PERMOD	1	no	-
TNOIMOD	0	no	-
FNOIMOD	0	no	-
EPSROX	3.9	no	-
TOXE	-99.0	no	-
TOXP	-99.0	no	-
TOXM	-99.0	no	-
DTOX	0.0	no	-
XJ	1.5e-7	no	-
GAMMA1	-99.0	no	-
GAMMA2	-99.0	no	-
NDEP	-99.0	no	-
NSUB	6.0e16	no	-
NGATE	0.0	no	-
NSD	1.0e20	no	-
VBX	-99.0	no	-
XT	1.55e-7	no	-
RSH	0.0	no	-
RSHG	0.0	no	-
VTH0	0.6	no	-
VFB	-99.0	no	-
PHIN	0.0	no	-
K1	-99.0	no	-
K2	-99.0	no	-
K3	80.0	no	-
K3B	0.0	no	-
W0	2.5e-6	no	-
LPE0	1.74e-7	no	-
LPEB	0.0	no	-
VBM	-3.0	no	-
DVT0	2.2	no	-
DVT1	0.53	no	-
DVT2	-0.032	no	-
DVTP0	0.0	no	-
DVTP1	0.0	no	-
DVT0W	0.0	no	-
DVT1W	5.3e6	no	-
DVT2W	-0.032	no	-
U0	-99.0	no	-
UA	-99.0	no	-
UB	1.0e-19	no	-
UC	-99.0	no	-
EU	-99.0	no	-
VSAT	8.0e4	no	-
A0	1.0	no	-
AGS	0.0	no	-
B0	0.0	no	-
B1	0.0	no	-
KETA	-0.047	no	-
A1	0.0	no	-
A2	1.0	no	-
WINT	0.0	no	-
LINT	0.0	no	-
DWG	0.0	no	-
DWB	0.0	no	-
VOFF	-0.08	no	-
VOFFL	0.0	no	-
MINV	0.0	no	-
NFACTOR	1.0	no	-
ETA0	0.08	no	-
ETAB	-0.07	no	-
DROUT	0.56	no	-
DSUB	0.56	no	-
CIT	0.0	no	-
CDSC	2.4e-4	no	-
CDSCB	0.0	no	-
CDSCD	0.0	no	-
PCLM	1.3	no	-
PDIBL1	0.39	no	-
PDIBL2	0.0086	no	-
PDIBLB	0.0	no	-
PSCBE1	4.24e8	no	-
PSCBE2	1.0e-5	no	-
PVAG	0.0	no	-
DELTA	0.01	no	-
FPROUT	0.0	no	-
PDITS	0.0	no	-
PDITSD	0.0	no	-
PDITSL	0.0	no	-
LAMBDA	-99.0	no	-
VTL	-99.0	no	-
LC	5.0e-9	no	-
XN	3.0	no	-
RDSW	200.0	no	-
RDSWMIN	0.0	no	-
RDW	100.0	no	-
RDWMIN	0.0	no	-
RSW	100.0	no	-
RSWMIN	0.0	no	-
PRWG	1.0	no	-
PRWB	0.0	no	-
WR	1.0	no	-
NRS	-99.0	no	-
NRD	-99.0	no	-
ALPHA0	0.0	no	-
ALPHA1	0.0	no	-
BETA0	30.0	no	-
AGIDL	0.0	no	-
BGIDL	2.3e9	no	-
CGIDL	0.5	no	-
EGIDL	0.8	no	-
AIGBACC	0.43	no	-
BIGBACC	0.054	no	-
CIGBACC	0.075	no	-
NIGBACC	1.0	no	-
AIGBINV	0.35	no	-
BIGBINV	0.03	no	-
CIGBINV	0.006	no	-
EIGBINV	1.1	no	-
NIGBINV	3.0	no	-
AIGC	-99.0	no	-
BIGC	-99.0	no	-
CIGC	-99.0	no	-
AIGSD	-99.0	no	-
BIGSD	-99.0	no	-
CIGSD	-99.0	no	-
DLCIG	0.0	no	-
NIGC	1.0	no	-
POXEDGE	1.0	no	-
PIGCD	1.0	no	-
NTOX	1.0	no	-
TOXREF	3.0e-9	no	-
XPART	0.4	no	-
CGS0	0.0	no	-
CGD0	0.0	no	-
CGB0	0.0	no	-
CGSL	0.0	no	-
CGDL	0.0	no	-
CKAPPAS	0.6	no	-
CKAPPAD	0.6	no	-
CF	-99.0	no	-
CLC	1.0e-7	no	-
CLE	0.6	no	-
DLC	0.0	no	-
DWC	0.0	no	-
VFBCV	-1.0	no	-
NOFF	1.0	no	-
VOFFCV	0.0	no	-
ACDE	1.0	no	-
MOIN	15.0	no	-
XRCRG1	12.0	no	-
XRCRG2	1.0	no	-
RBPB	50.0	no	-
RBPD	50.0	no	-
RBPS	50.0	no	-
RBDB	50.0	no	-
RBSB	50.0	no	-
GBMIN	1.0e-12	no	-
DMCG	0.0	no	-
DMCI	0.0	no	-
DMDG	0.0	no	-
DMCGT	0.0	no	-
NF	1.0	no	-
DWJ	0.0	no	-
MIN	0.0	no	-
XGW	0.0	no	-
XGL	0.0	no	-
XL	0.0	no	-
XW	0.0	no	-
NGCON	1.0	no	-
IJTHSREV	0.1	no	-
IJTHDREV	0.1	no	-
IJTHSFWD	0.1	no	-
IJTHDFWD	0.1	no	-
XJBVS	1.0	no	-
XJBVD	1.0	no	-
BVS	10.0	no	-
BVD	10.0	no	-
JSS	1.0e-4	no	-
JSD	1.0e-4	no	-
JSWS	0.0	no	-
JSWD	0.0	no	-
JSWGS	0.0	no	-
JSWGD	0.0	no	-
CJS	5.0e-4	no	-
CJD	5.0e-4	no	-
MJS	0.5	no	-
MJD	0.5	no	-
MJSWS	0.33	no	-
MJSWD	0.33	no	-
CJSWS	5.0e-10	no	-
CJSWD	5.0e-10	no	-
CJSWGS	5.0e-10	no	-
CJSWGD	5.0e-10	no	-
MJSWGS	0.33	no	-
MJSWGD	0.33	no	-
PBS	1.0	no	-
PBD	1.0	no	-
PBSWS	1.0	no	-
PBSWD	1.0	no	-
PBSWGS	1.0	no	-
PBSWGD	1.0	no	-
TNOM	27	no	-
UTE	-1.5	no	-
KT1	-0.11	no	-
KT1L	0.0	no	-
KT2	0.022	no	-
UA1	1.0e-9	no	-
UB1	-1.0e-18	no	-
UC1	-99.0	no	-
AT	3.3e4	no	-
PRT	0.0	no	-
NJS	1.0	no	-
NJD	1.0	no	-
XTIS	3.0	no	-
XTID	3.0	no	-
TPB	0.0	no	-
TPBSW	0.0	no	-
TPBSWG	0.0	no	-
TCJ	0.0	no	-
TCJSW	0.0	no	-
TCJSWG	0.0	no	-
SA	0.0	no	-
SB	0.0	no	-
SD	0.0	no	-
SAREF	1e-6	no	-
SBREF	1e-6	no	-
WLOD	0.0	no	-
KU0	0.0	no	-
KVSAT	0.0	no	-
TKU0	0.0	no	-
LKU0	0.0	no	-
WKU0	0.0	no	-
PKU0	0.0	no	-
LLODKU0	0.0	no	-
WLODKU0	0.0	no	-
KVTH0	0.0	no	-
LKVTH0	0.0	no	-
WKVTH0	0.0	no	-
PKVTH0	0.0	no	-
LLODVTH	0.0	no	-
WLODVTH	0.0	no	-
STK2	0.0	no	-
LODK2	1.0	no	-
STETA0	0.0	no	-
LODETA0	1.0	no	-
WL	0.0	no	-
WLN	1.0	no	-
WW	0.0	no	-
WWN	1.0	no	-
WWL	0.0	no	-
LL	0.0	no	-
LLN	1.0	no	-
LW	0.0	no	-
LWN	1.0	no	-
LWL	0.0	no	-
LLC	0.0	no	-
LWC	0.0	no	-
LWLC	0.0	no	-
WLC	0.0	no	-
WWC	0.0	no	-
WWLC	0.0	no	-
NTNOI	1.0	no	-
KF	0.0	no	-
AF	1.0	no	-
EF	1.0	no	-
TEMP	27	no	-

Bsim4V30Pmos¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	bsim4v30pMOS
Descripció	bsim4v30pMOS verilog device
Schematic entry	`bsim4v30pMOS`
Netlist entry	`BSIM4_`
Tipus	AnalogComponent
Bitmap file	bsim4v30pMOS
Propietats	278
Category	verilog-a devices

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
GMIN	1e-12	no	-
PS	12e-6	no	-
PD	12e-6	no	-
AS	12e-12	no	-
AD	12e-12	no	-
CGBO	-99.0	no	-
CGDO	-99.0	no	-
CGSO	-99.0	no	-
L	3e-6	no	-
W	6e-6	no	-
MOBMOD	-99.0	no	-
RDSMOD	-99.0	no	-
IGCMOD	0	no	-
IGBMOD	0	no	-
CAPMOD	2	no	-
RGATEMOD	2	no	-
RBODYMOD	0	no	-
DIOMOD	1	no	-
TEMPMOD	-99.0	no	-
GEOMOD	0	no	-
RGEOMOD	0	no	-
PERMOD	1	no	-
TNOIMOD	0	no	-
FNOIMOD	0	no	-
EPSROX	3.9	no	-
TOXE	-99.0	no	-
TOXP	-99.0	no	-
TOXM	-99.0	no	-
DTOX	0.0	no	-
XJ	1.5e-7	no	-
GAMMA1	-99.0	no	-
GAMMA2	-99.0	no	-
NDEP	-99.0	no	-
NSUB	6.0e16	no	-
NGATE	0.0	no	-
NSD	1.0e20	no	-
VBX	-99.0	no	-
XT	1.55e-7	no	-
RSH	0.0	no	-
RSHG	0.0	no	-
VTH0	-0.6	no	-
VFB	-99.0	no	-
PHIN	0.0	no	-
K1	-99.0	no	-
K2	-99.0	no	-
K3	80.0	no	-
K3B	0.0	no	-
W0	2.5e-6	no	-
LPE0	1.74e-7	no	-
LPEB	0.0	no	-
VBM	-3.0	no	-
DVT0	2.2	no	-
DVT1	0.53	no	-
DVT2	-0.032	no	-
DVTP0	0.0	no	-
DVTP1	0.0	no	-
DVT0W	0.0	no	-
DVT1W	5.3e6	no	-
DVT2W	-0.032	no	-
U0	-99.0	no	-
UA	-99.0	no	-
UB	1.0e-19	no	-
UC	-99.0	no	-
EU	-99.0	no	-
VSAT	8.0e4	no	-
A0	1.0	no	-
AGS	0.0	no	-
B0	0.0	no	-
B1	0.0	no	-
KETA	-0.047	no	-
A1	0.0	no	-
A2	1.0	no	-
WINT	0.0	no	-
LINT	0.0	no	-
DWG	0.0	no	-
DWB	0.0	no	-
VOFF	-0.08	no	-
VOFFL	0.0	no	-
MINV	0.0	no	-
NFACTOR	1.0	no	-
ETA0	0.08	no	-
ETAB	-0.07	no	-
DROUT	0.56	no	-
DSUB	0.56	no	-
CIT	0.0	no	-
CDSC	2.4e-4	no	-
CDSCB	0.0	no	-
CDSCD	0.0	no	-
PCLM	1.3	no	-
PDIBL1	0.39	no	-
PDIBL2	0.0086	no	-
PDIBLB	0.0	no	-
PSCBE1	4.24e8	no	-
PSCBE2	1.0e-5	no	-
PVAG	0.0	no	-
DELTA	0.01	no	-
FPROUT	0.0	no	-
PDITS	0.0	no	-
PDITSD	0.0	no	-
PDITSL	0.0	no	-
LAMBDA	-99.0	no	-
VTL	-99.0	no	-
LC	5.0e-9	no	-
XN	3.0	no	-
RDSW	200.0	no	-
RDSWMIN	0.0	no	-
RDW	100.0	no	-
RDWMIN	0.0	no	-
RSW	100.0	no	-
RSWMIN	0.0	no	-
PRWG	1.0	no	-
PRWB	0.0	no	-
WR	1.0	no	-
NRS	-99.0	no	-
NRD	-99.0	no	-
ALPHA0	0.0	no	-
ALPHA1	0.0	no	-
BETA0	30.0	no	-
AGIDL	0.0	no	-
BGIDL	2.3e9	no	-
CGIDL	0.5	no	-
EGIDL	0.8	no	-
AIGBACC	0.43	no	-
BIGBACC	0.054	no	-
CIGBACC	0.075	no	-
NIGBACC	1.0	no	-
AIGBINV	0.35	no	-
BIGBINV	0.03	no	-
CIGBINV	0.006	no	-
EIGBINV	1.1	no	-
NIGBINV	3.0	no	-
AIGC	-99.0	no	-
BIGC	-99.0	no	-
CIGC	-99.0	no	-
AIGSD	-99.0	no	-
BIGSD	-99.0	no	-
CIGSD	-99.0	no	-
DLCIG	0.0	no	-
NIGC	1.0	no	-
POXEDGE	1.0	no	-
PIGCD	1.0	no	-
NTOX	1.0	no	-
TOXREF	3.0e-9	no	-
XPART	0.4	no	-
CGS0	0.0	no	-
CGD0	0.0	no	-
CGB0	0.0	no	-
CGSL	0.0	no	-
CGDL	0.0	no	-
CKAPPAS	0.6	no	-
CKAPPAD	0.6	no	-
CF	-99.0	no	-
CLC	1.0e-7	no	-
CLE	0.6	no	-
DLC	0.0	no	-
DWC	0.0	no	-
VFBCV	-1.0	no	-
NOFF	1.0	no	-
VOFFCV	0.0	no	-
ACDE	1.0	no	-
MOIN	15.0	no	-
XRCRG1	12.0	no	-
XRCRG2	1.0	no	-
RBPB	50.0	no	-
RBPD	50.0	no	-
RBPS	50.0	no	-
RBDB	50.0	no	-
RBSB	50.0	no	-
GBMIN	1.0e-12	no	-
DMCG	0.0	no	-
DMCI	0.0	no	-
DMDG	0.0	no	-
DMCGT	0.0	no	-
NF	1.0	no	-
DWJ	0.0	no	-
MIN	0.0	no	-
XGW	0.0	no	-
XGL	0.0	no	-
XL	0.0	no	-
XW	0.0	no	-
NGCON	1.0	no	-
IJTHSREV	0.1	no	-
IJTHDREV	0.1	no	-
IJTHSFWD	0.1	no	-
IJTHDFWD	0.1	no	-
XJBVS	1.0	no	-
XJBVD	1.0	no	-
BVS	10.0	no	-
BVD	10.0	no	-
JSS	1.0e-4	no	-
JSD	1.0e-4	no	-
JSWS	0.0	no	-
JSWD	0.0	no	-
JSWGS	0.0	no	-
JSWGD	0.0	no	-
CJS	5.0e-4	no	-
CJD	5.0e-4	no	-
MJS	0.5	no	-
MJD	0.5	no	-
MJSWS	0.33	no	-
MJSWD	0.33	no	-
CJSWS	5.0e-10	no	-
CJSWD	5.0e-10	no	-
CJSWGS	5.0e-10	no	-
CJSWGD	5.0e-10	no	-
MJSWGS	0.33	no	-
MJSWGD	0.33	no	-
PBS	1.0	no	-
PBD	1.0	no	-
PBSWS	1.0	no	-
PBSWD	1.0	no	-
PBSWGS	1.0	no	-
PBSWGD	1.0	no	-
TNOM	27	no	-
UTE	-1.5	no	-
KT1	-0.11	no	-
KT1L	0.0	no	-
KT2	0.022	no	-
UA1	1.0e-9	no	-
UB1	-1.0e-18	no	-
UC1	-99.0	no	-
AT	3.3e4	no	-
PRT	0.0	no	-
NJS	1.0	no	-
NJD	1.0	no	-
XTIS	3.0	no	-
XTID	3.0	no	-
TPB	0.0	no	-
TPBSW	0.0	no	-
TPBSWG	0.0	no	-
TCJ	0.0	no	-
TCJSW	0.0	no	-
TCJSWG	0.0	no	-
SA	0.0	no	-
SB	0.0	no	-
SD	0.0	no	-
SAREF	1e-6	no	-
SBREF	1e-6	no	-
WLOD	0.0	no	-
KU0	0.0	no	-
KVSAT	0.0	no	-
TKU0	0.0	no	-
LKU0	0.0	no	-
WKU0	0.0	no	-
PKU0	0.0	no	-
LLODKU0	0.0	no	-
WLODKU0	0.0	no	-
KVTH0	0.0	no	-
LKVTH0	0.0	no	-
WKVTH0	0.0	no	-
PKVTH0	0.0	no	-
LLODVTH	0.0	no	-
WLODVTH	0.0	no	-
STK2	0.0	no	-
LODK2	1.0	no	-
STETA0	0.0	no	-
LODETA0	1.0	no	-
WL	0.0	no	-
WLN	1.0	no	-
WW	0.0	no	-
WWN	1.0	no	-
WWL	0.0	no	-
LL	0.0	no	-
LLN	1.0	no	-
LW	0.0	no	-
LWN	1.0	no	-
LWL	0.0	no	-
LLC	0.0	no	-
LWC	0.0	no	-
LWLC	0.0	no	-
WLC	0.0	no	-
WWC	0.0	no	-
WWLC	0.0	no	-
NTNOI	1.0	no	-
KF	0.0	no	-
AF	1.0	no	-
EF	1.0	no	-
TEMP	27	no	-

Npn Hicum L0 V1.2¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	npn HICUM L0 v1.2
Descripció	HICUM Level 0 v1.2 verilog device
Schematic entry	`hicumL0V1p2`
Netlist entry	`T`
Tipus	AnalogComponent
Bitmap file	npnsub_therm
Propietats	94
Category	verilog-a devices

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Tipus	npn	Si	polarity [npn, pnp]
is	1.0e-16	no	(Modified) saturation current (A)
mcf	1.00	no	Non-ideality coefficient of forward collector current
mcr	1.00	no	Non-ideality coefficient of reverse collector current
vef	1.0e6	no	forward Early voltage (normalization volt.) (V)
ver	1.0e6	no	reverse Early voltage (normalization volt.) (V)
iqf	1.0e6	no	forward d.c. high-injection roll-off current (A)
fiqf	0	no	flag for turning on base related critical current
iqr	1.0e6	no	inverse d.c. high-injection roll-off current (A)
iqfh	1.0e6	no	high-injection correction current (A)
tfh	0.0	no	high-injection correction factor
ahq	0	no	Smoothing factor for the d.c. injection width
ibes	1e-18	no	BE saturation current (A)
mbe	1.0	no	BE non-ideality factor
ires	0.0	no	BE recombination saturation current (A)
mre	2.0	no	BE recombination non-ideality factor
ibcs	0.0	no	BC saturation current (A)
mbc	1.0	no	BC non-ideality factor
cje0	1.0e-20	no	Zero-bias BE depletion capacitance (F)
vde	0.9	no	BE built-in voltage (V)
ze	0.5	no	BE exponent factor
aje	2.5	no	Ratio of maximum to zero-bias value
vdedc	0.9	no	BE charge built-in voltage for d.c. transfer current (V)
zedc	0.5	no	charge BE exponent factor for d.c. transfer current
ajedc	2.5	no	BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current
t0	0.0	no	low current transit time at Vbici=0 (s)
dt0h	0.0	no	Base width modulation contribution (s)
tbvl	0.0	no	SCR width modulation contribution (s)
tef0	0.0	no	Storage time in neutral emitter (s)
gte	1.0	no	Exponent factor for emitter transit time
thcs	0.0	no	Saturation time at high current densities (s)
ahc	0.1	no	Smoothing factor for current dependence
tr	0.0	no	Storage time at inverse operation (s)
rci0	150	no	Low-field collector resistance under emitter (Ohm)
vlim	0.5	no	Voltage dividing ohmic and satur.region (V)
vpt	100	no	Punch-through voltage (V)
vces	0.1	no	Saturation voltage (V)
cjci0	1.0e-20	no	Total zero-bias BC depletion capacitance (F)
vdci	0.7	no	BC built-in voltage (V)
zci	0.333	no	BC exponent factor
vptci	100	no	Punch-through voltage of BC junction (V)
cjcx0	1.0e-20	no	Zero-bias external BC depletion capacitance (F)
vdcx	0.7	no	External BC built-in voltage (V)
zcx	0.333	no	External BC exponent factor
vptcx	100	no	Punch-through voltage (V)
fbc	1.0	no	Split factor = Cjci0/Cjc0
rbi0	0.0	no	Internal base resistance at zero-bias (Ohm)
vr0e	2.5	no	forward Early voltage (normalization volt.) (V)
vr0c	1.0e6	no	forward Early voltage (normalization volt.) (V)
fgeo	0.656	no	Geometry factor
rbx	0.0	no	External base series resistance (Ohm)
rcx	0.0	no	Emitter series resistance (Ohm)
re	0.0	no	External collector series resistance (Ohm)
itss	0.0	no	Substrate transistor transfer saturation current (A)
msf	1.0	no	Substrate transistor transfer current non-ideality factor
iscs	0.0	no	SC saturation current (A)
msc	1.0	no	SC non-ideality factor
cjs0	1.0e-20	no	Zero-bias SC depletion capacitance (F)
vds	0.3	no	SC built-in voltage (V)
zs	0.3	no	External SC exponent factor
vpts	100	no	SC punch-through voltage (V)
cbcpar	0.0	no	Collector-base isolation (overlap) capacitance (F)
cbepar	0.0	no	Emitter-base oxide capacitance (F)
eavl	0.0	no	Exponent factor
kavl	0.0	no	Prefactor
kf	0.0	no	flicker noise coefficient (M^(1-AF))
af	2.0	no	flicker noise exponent factor
vgb	1.2	no	Bandgap-voltage (V)
vge	1.17	no	Effective emitter bandgap-voltage (V)
vgc	1.17	no	Effective collector bandgap-voltage (V)
vgs	1.17	no	Effective substrate bandgap-voltage (V)
f1vg	-1.02377e-4	no	Coefficient K1 in T-dependent bandgap equation (V/K)
f2vg	4.3215e-4	no	Coefficient K2 in T-dependent bandgap equation (V/K)
alt0	0.0	no	Frist-order TC of tf0 (1/K)
kt0	0.0	no	Second-order TC of tf0 (1/K^2)
zetact	3.0	no	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	no	Exponent coefficient in BE junction current temperature dependence
zetaci	0.0	no	TC of epi-collector diffusivity
alvs	0.0	no	Relative TC of satur.drift velocity (1/K)
alces	0.0	no	Relative TC of vces (1/K)
zetarbi	0.0	no	TC of internal base resistance
zetarbx	0.0	no	TC of external base resistance
zetarcx	0.0	no	TC of external collector resistance
zetare	0.0	no	TC of emitter resistances
zetaiqf	0.0	no	TC of iqf
alkav	0.0	no	TC of avalanche prefactor (1/K)
aleav	0.0	no	TC of avalanche exponential factor (1/K)
zetarth	0.0	no	Exponent factor for temperature dependent thermal resistance
flsh	0	no	Flag for self-heating calculation
rth	0.0	no	Thermal resistance (K/W)
cth	0.0	no	Thermal capacitance (Ws/K)
tnom	27	no	Temperature for which parameters are valid (C)
dt	0.0	no	Temperature change for particular transistor (K)
Temp	27	no	simulation temperature

Pnp Hicum L0 V1.2¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	pnp HICUM L0 v1.2
Descripció	HICUM Level 0 v1.2 verilog device
Schematic entry	`hicumL0V1p2`
Netlist entry	`T`
Tipus	AnalogComponent
Bitmap file	pnpsub_therm
Propietats	94
Category	verilog-a devices

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Tipus	pnp	Si	polarity [npn, pnp]
is	1.0e-16	no	(Modified) saturation current (A)
mcf	1.00	no	Non-ideality coefficient of forward collector current
mcr	1.00	no	Non-ideality coefficient of reverse collector current
vef	1.0e6	no	forward Early voltage (normalization volt.) (V)
ver	1.0e6	no	reverse Early voltage (normalization volt.) (V)
iqf	1.0e6	no	forward d.c. high-injection roll-off current (A)
fiqf	0	no	flag for turning on base related critical current
iqr	1.0e6	no	inverse d.c. high-injection roll-off current (A)
iqfh	1.0e6	no	high-injection correction current (A)
tfh	0.0	no	high-injection correction factor
ahq	0	no	Smoothing factor for the d.c. injection width
ibes	1e-18	no	BE saturation current (A)
mbe	1.0	no	BE non-ideality factor
ires	0.0	no	BE recombination saturation current (A)
mre	2.0	no	BE recombination non-ideality factor
ibcs	0.0	no	BC saturation current (A)
mbc	1.0	no	BC non-ideality factor
cje0	1.0e-20	no	Zero-bias BE depletion capacitance (F)
vde	0.9	no	BE built-in voltage (V)
ze	0.5	no	BE exponent factor
aje	2.5	no	Ratio of maximum to zero-bias value
vdedc	0.9	no	BE charge built-in voltage for d.c. transfer current (V)
zedc	0.5	no	charge BE exponent factor for d.c. transfer current
ajedc	2.5	no	BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current
t0	0.0	no	low current transit time at Vbici=0 (s)
dt0h	0.0	no	Base width modulation contribution (s)
tbvl	0.0	no	SCR width modulation contribution (s)
tef0	0.0	no	Storage time in neutral emitter (s)
gte	1.0	no	Exponent factor for emitter transit time
thcs	0.0	no	Saturation time at high current densities (s)
ahc	0.1	no	Smoothing factor for current dependence
tr	0.0	no	Storage time at inverse operation (s)
rci0	150	no	Low-field collector resistance under emitter (Ohm)
vlim	0.5	no	Voltage dividing ohmic and satur.region (V)
vpt	100	no	Punch-through voltage (V)
vces	0.1	no	Saturation voltage (V)
cjci0	1.0e-20	no	Total zero-bias BC depletion capacitance (F)
vdci	0.7	no	BC built-in voltage (V)
zci	0.333	no	BC exponent factor
vptci	100	no	Punch-through voltage of BC junction (V)
cjcx0	1.0e-20	no	Zero-bias external BC depletion capacitance (F)
vdcx	0.7	no	External BC built-in voltage (V)
zcx	0.333	no	External BC exponent factor
vptcx	100	no	Punch-through voltage (V)
fbc	1.0	no	Split factor = Cjci0/Cjc0
rbi0	0.0	no	Internal base resistance at zero-bias (Ohm)
vr0e	2.5	no	forward Early voltage (normalization volt.) (V)
vr0c	1.0e6	no	forward Early voltage (normalization volt.) (V)
fgeo	0.656	no	Geometry factor
rbx	0.0	no	External base series resistance (Ohm)
rcx	0.0	no	Emitter series resistance (Ohm)
re	0.0	no	External collector series resistance (Ohm)
itss	0.0	no	Substrate transistor transfer saturation current (A)
msf	1.0	no	Substrate transistor transfer current non-ideality factor
iscs	0.0	no	SC saturation current (A)
msc	1.0	no	SC non-ideality factor
cjs0	1.0e-20	no	Zero-bias SC depletion capacitance (F)
vds	0.3	no	SC built-in voltage (V)
zs	0.3	no	External SC exponent factor
vpts	100	no	SC punch-through voltage (V)
cbcpar	0.0	no	Collector-base isolation (overlap) capacitance (F)
cbepar	0.0	no	Emitter-base oxide capacitance (F)
eavl	0.0	no	Exponent factor
kavl	0.0	no	Prefactor
kf	0.0	no	flicker noise coefficient (M^(1-AF))
af	2.0	no	flicker noise exponent factor
vgb	1.2	no	Bandgap-voltage (V)
vge	1.17	no	Effective emitter bandgap-voltage (V)
vgc	1.17	no	Effective collector bandgap-voltage (V)
vgs	1.17	no	Effective substrate bandgap-voltage (V)
f1vg	-1.02377e-4	no	Coefficient K1 in T-dependent bandgap equation (V/K)
f2vg	4.3215e-4	no	Coefficient K2 in T-dependent bandgap equation (V/K)
alt0	0.0	no	Frist-order TC of tf0 (1/K)
kt0	0.0	no	Second-order TC of tf0 (1/K^2)
zetact	3.0	no	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	no	Exponent coefficient in BE junction current temperature dependence
zetaci	0.0	no	TC of epi-collector diffusivity
alvs	0.0	no	Relative TC of satur.drift velocity (1/K)
alces	0.0	no	Relative TC of vces (1/K)
zetarbi	0.0	no	TC of internal base resistance
zetarbx	0.0	no	TC of external base resistance
zetarcx	0.0	no	TC of external collector resistance
zetare	0.0	no	TC of emitter resistances
zetaiqf	0.0	no	TC of iqf
alkav	0.0	no	TC of avalanche prefactor (1/K)
aleav	0.0	no	TC of avalanche exponential factor (1/K)
zetarth	0.0	no	Exponent factor for temperature dependent thermal resistance
flsh	0	no	Flag for self-heating calculation
rth	0.0	no	Thermal resistance (K/W)
cth	0.0	no	Thermal capacitance (Ws/K)
tnom	27	no	Temperature for which parameters are valid (C)
dt	0.0	no	Temperature change for particular transistor (K)
Temp	27	no	simulation temperature

Npn Hicum L0 V1.2G¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	npn HICUM L0 v1.2g
Descripció	HICUM Level 0 v1.2g verilog device
Schematic entry	`hicumL0V1p2g`
Netlist entry	`T`
Tipus	AnalogComponent
Bitmap file	npnsub_therm
Propietats	99
Category	verilog-a devices

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Tipus	npn	Si	polarity [npn, pnp]
is	1.0e-16	no	(Modified) saturation current (A)
mcf	1.00	no	Non-ideality coefficient of forward collector current
mcr	1.00	no	Non-ideality coefficient of reverse collector current
vef	1.0e6	no	forward Early voltage (normalization volt.) (V)
ver	1.0e6	no	reverse Early voltage (normalization volt.) (V)
iqf	1.0e6	no	forward d.c. high-injection roll-off current (A)
fiqf	0	no	flag for turning on base related critical current
iqr	1.0e6	no	inverse d.c. high-injection roll-off current (A)
iqfh	1.0e6	no	high-injection correction current (A)
iqfe	0.0	no	high-injection roll-off current
ahq	0.0	no	Smoothing factor for the d.c. injection width
ibes	1e-18	no	BE saturation current (A)
mbe	1.0	no	BE non-ideality factor
ires	0.0	no	BE recombination saturation current (A)
mre	2.0	no	BE recombination non-ideality factor
ibcs	0.0	no	BC saturation current (A)
mbc	1.0	no	BC non-ideality factor
cje0	1.0e-20	no	Zero-bias BE depletion capacitance (F)
vde	0.9	no	BE built-in voltage (V)
ze	0.5	no	BE exponent factor
aje	2.5	no	Ratio of maximum to zero-bias value
vdedc	0.9	no	BE charge built-in voltage for d.c. transfer current (V)
zedc	0.5	no	charge BE exponent factor for d.c. transfer current
ajedc	2.5	no	BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current
t0	0.0	no	low current transit time at Vbici=0 (s)
dt0h	0.0	no	Base width modulation contribution (s)
tbvl	0.0	no	SCR width modulation contribution (s)
tef0	0.0	no	Storage time in neutral emitter (s)
gte	1.0	no	Exponent factor for emitter transit time
thcs	0.0	no	Saturation time at high current densities (s)
ahc	0.1	no	Smoothing factor for current dependence
tr	0.0	no	Storage time at inverse operation (s)
rci0	150	no	Low-field collector resistance under emitter (Ohm)
vlim	0.5	no	Voltage dividing ohmic and satur.region (V)
vpt	100.0	no	Punch-through voltage (V)
vces	0.1	no	Saturation voltage (V)
cjci0	1.0e-20	no	Total zero-bias BC depletion capacitance (F)
vdci	0.7	no	BC built-in voltage (V)
zci	0.333	no	BC exponent factor
vptci	100.0	no	Punch-through voltage of BC junction (V)
cjcx0	1.0e-20	no	Zero-bias external BC depletion capacitance (F)
vdcx	0.7	no	External BC built-in voltage (V)
zcx	0.333	no	External BC exponent factor
vptcx	100.0	no	Punch-through voltage (V)
fbc	1.0	no	Split factor = Cjci0/Cjc0
rbi0	0.0	no	Internal base resistance at zero-bias (Ohm)
vr0e	2.5	no	forward Early voltage (normalization volt.) (V)
vr0c	1.0e6	no	forward Early voltage (normalization volt.) (V)
fgeo	0.656	no	Geometry factor
rbx	0.0	no	External base series resistance (Ohm)
rcx	0.0	no	Emitter series resistance (Ohm)
re	0.0	no	External collector series resistance (Ohm)
itss	0.0	no	Substrate transistor transfer saturation current (A)
msf	1.0	no	Substrate transistor transfer current non-ideality factor
iscs	0.0	no	SC saturation current (A)
msc	1.0	no	SC non-ideality factor
cjs0	1.0e-20	no	Zero-bias SC depletion capacitance (F)
vds	0.3	no	SC built-in voltage (V)
zs	0.3	no	External SC exponent factor
vpts	100.0	no	SC punch-through voltage (V)
cbcpar	0.0	no	Collector-base isolation (overlap) capacitance (F)
cbepar	0.0	no	Emitter-base oxide capacitance (F)
eavl	0.0	no	Exponent factor
kavl	0.0	no	Prefactor
kf	0.0	no	flicker noise coefficient (M^(1-AF))
af	2.0	no	flicker noise exponent factor
vgb	1.2	no	Bandgap-voltage (V)
vge	1.17	no	Effective emitter bandgap-voltage (V)
vgc	1.17	no	Effective collector bandgap-voltage (V)
vgs	1.17	no	Effective substrate bandgap-voltage (V)
f1vg	-1.02377e-4	no	Coefficient K1 in T-dependent bandgap equation (V/K)
f2vg	4.3215e-4	no	Coefficient K2 in T-dependent bandgap equation (V/K)
alt0	0.0	no	Frist-order TC of tf0 (1/K)
kt0	0.0	no	Second-order TC of tf0 (1/K^2)
zetact	3.0	no	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	no	Exponent coefficient in BE junction current temperature dependence
zetaci	0.0	no	TC of epi-collector diffusivity
alvs	0.0	no	Relative TC of satur.drift velocity (1/K)
alces	0.0	no	Relative TC of vces (1/K)
zetarbi	0.0	no	TC of internal base resistance
zetarbx	0.0	no	TC of external base resistance
zetarcx	0.0	no	TC of external collector resistance
zetare	0.0	no	TC of emitter resistances
zetaiqf	0.0	no	TC of iqf (bandgap coefficient of zero bias hole charge)
alkav	0.0	no	TC of avalanche prefactor, identical to alfav of Hicum/L2 (1/K)
aleav	0.0	no	TC of avalanche exponential factor, identical to alqav of Hicum/L2 (1/K)
flsh	0	no	Flag for self-heating calculation
rth	0.0	no	Thermal resistance (K/W)
zetarth	0.0	no	Exponent factor for temperature dependent thermal resistance
cth	0.0	no	Thermal capacitance (Ws/K)
tnom	27	no	Temperature for which parameters are valid (C)
dt	0.0	no	Temperature change for particular transistor (K)
delte	0.0	no	Emitter part coefficient of the zero bias hole charge temperature variation
deltc	0.0	no	Collector part coefficient of the zero bias hole charge temperature variation
zetaver	0.0	no	Bandgap TC parameter of ver
zetavef	0.0	no	Bandgap TC parameter of vef
ibhrec	0.0	no	Specific recombination current at the BC barrier for high forward injection (A)
Temp	27	no	simulation temperature

Pnp Hicum L0 V1.2G¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	pnp HICUM L0 v1.2g
Descripció	HICUM Level 0 v1.2g verilog device
Schematic entry	`hicumL0V1p2g`
Netlist entry	`T`
Tipus	AnalogComponent
Bitmap file	pnpsub_therm
Propietats	99
Category	verilog-a devices

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Tipus	pnp	Si	polarity [npn, pnp]
is	1.0e-16	no	(Modified) saturation current (A)
mcf	1.00	no	Non-ideality coefficient of forward collector current
mcr	1.00	no	Non-ideality coefficient of reverse collector current
vef	1.0e6	no	forward Early voltage (normalization volt.) (V)
ver	1.0e6	no	reverse Early voltage (normalization volt.) (V)
iqf	1.0e6	no	forward d.c. high-injection roll-off current (A)
fiqf	0	no	flag for turning on base related critical current
iqr	1.0e6	no	inverse d.c. high-injection roll-off current (A)
iqfh	1.0e6	no	high-injection correction current (A)
iqfe	0.0	no	high-injection roll-off current
ahq	0.0	no	Smoothing factor for the d.c. injection width
ibes	1e-18	no	BE saturation current (A)
mbe	1.0	no	BE non-ideality factor
ires	0.0	no	BE recombination saturation current (A)
mre	2.0	no	BE recombination non-ideality factor
ibcs	0.0	no	BC saturation current (A)
mbc	1.0	no	BC non-ideality factor
cje0	1.0e-20	no	Zero-bias BE depletion capacitance (F)
vde	0.9	no	BE built-in voltage (V)
ze	0.5	no	BE exponent factor
aje	2.5	no	Ratio of maximum to zero-bias value
vdedc	0.9	no	BE charge built-in voltage for d.c. transfer current (V)
zedc	0.5	no	charge BE exponent factor for d.c. transfer current
ajedc	2.5	no	BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current
t0	0.0	no	low current transit time at Vbici=0 (s)
dt0h	0.0	no	Base width modulation contribution (s)
tbvl	0.0	no	SCR width modulation contribution (s)
tef0	0.0	no	Storage time in neutral emitter (s)
gte	1.0	no	Exponent factor for emitter transit time
thcs	0.0	no	Saturation time at high current densities (s)
ahc	0.1	no	Smoothing factor for current dependence
tr	0.0	no	Storage time at inverse operation (s)
rci0	150	no	Low-field collector resistance under emitter (Ohm)
vlim	0.5	no	Voltage dividing ohmic and satur.region (V)
vpt	100.0	no	Punch-through voltage (V)
vces	0.1	no	Saturation voltage (V)
cjci0	1.0e-20	no	Total zero-bias BC depletion capacitance (F)
vdci	0.7	no	BC built-in voltage (V)
zci	0.333	no	BC exponent factor
vptci	100.0	no	Punch-through voltage of BC junction (V)
cjcx0	1.0e-20	no	Zero-bias external BC depletion capacitance (F)
vdcx	0.7	no	External BC built-in voltage (V)
zcx	0.333	no	External BC exponent factor
vptcx	100.0	no	Punch-through voltage (V)
fbc	1.0	no	Split factor = Cjci0/Cjc0
rbi0	0.0	no	Internal base resistance at zero-bias (Ohm)
vr0e	2.5	no	forward Early voltage (normalization volt.) (V)
vr0c	1.0e6	no	forward Early voltage (normalization volt.) (V)
fgeo	0.656	no	Geometry factor
rbx	0.0	no	External base series resistance (Ohm)
rcx	0.0	no	Emitter series resistance (Ohm)
re	0.0	no	External collector series resistance (Ohm)
itss	0.0	no	Substrate transistor transfer saturation current (A)
msf	1.0	no	Substrate transistor transfer current non-ideality factor
iscs	0.0	no	SC saturation current (A)
msc	1.0	no	SC non-ideality factor
cjs0	1.0e-20	no	Zero-bias SC depletion capacitance (F)
vds	0.3	no	SC built-in voltage (V)
zs	0.3	no	External SC exponent factor
vpts	100.0	no	SC punch-through voltage (V)
cbcpar	0.0	no	Collector-base isolation (overlap) capacitance (F)
cbepar	0.0	no	Emitter-base oxide capacitance (F)
eavl	0.0	no	Exponent factor
kavl	0.0	no	Prefactor
kf	0.0	no	flicker noise coefficient (M^(1-AF))
af	2.0	no	flicker noise exponent factor
vgb	1.2	no	Bandgap-voltage (V)
vge	1.17	no	Effective emitter bandgap-voltage (V)
vgc	1.17	no	Effective collector bandgap-voltage (V)
vgs	1.17	no	Effective substrate bandgap-voltage (V)
f1vg	-1.02377e-4	no	Coefficient K1 in T-dependent bandgap equation (V/K)
f2vg	4.3215e-4	no	Coefficient K2 in T-dependent bandgap equation (V/K)
alt0	0.0	no	Frist-order TC of tf0 (1/K)
kt0	0.0	no	Second-order TC of tf0 (1/K^2)
zetact	3.0	no	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	no	Exponent coefficient in BE junction current temperature dependence
zetaci	0.0	no	TC of epi-collector diffusivity
alvs	0.0	no	Relative TC of satur.drift velocity (1/K)
alces	0.0	no	Relative TC of vces (1/K)
zetarbi	0.0	no	TC of internal base resistance
zetarbx	0.0	no	TC of external base resistance
zetarcx	0.0	no	TC of external collector resistance
zetare	0.0	no	TC of emitter resistances
zetaiqf	0.0	no	TC of iqf (bandgap coefficient of zero bias hole charge)
alkav	0.0	no	TC of avalanche prefactor, identical to alfav of Hicum/L2 (1/K)
aleav	0.0	no	TC of avalanche exponential factor, identical to alqav of Hicum/L2 (1/K)
flsh	0	no	Flag for self-heating calculation
rth	0.0	no	Thermal resistance (K/W)
zetarth	0.0	no	Exponent factor for temperature dependent thermal resistance
cth	0.0	no	Thermal capacitance (Ws/K)
tnom	27	no	Temperature for which parameters are valid (C)
dt	0.0	no	Temperature change for particular transistor (K)
delte	0.0	no	Emitter part coefficient of the zero bias hole charge temperature variation
deltc	0.0	no	Collector part coefficient of the zero bias hole charge temperature variation
zetaver	0.0	no	Bandgap TC parameter of ver
zetavef	0.0	no	Bandgap TC parameter of vef
ibhrec	0.0	no	Specific recombination current at the BC barrier for high forward injection (A)
Temp	27	no	simulation temperature

Npn Hicum L0 V1.3¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	npn HICUM L0 v1.3
Descripció	HICUM Level 0 v1.3 verilog device
Schematic entry	`hicumL0V1p3`
Netlist entry	`T`
Tipus	AnalogComponent
Bitmap file	pnpsub_therm
Propietats	102
Category	verilog-a devices

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Tipus	npn	Si	polarity [npn, pnp]
is	1.0e-16	no	(Modified) saturation current (A)
it_mod	0	no	Flag for using third order solution for transfer current
mcf	1.00	no	Non-ideality coefficient of forward collector current
mcr	1.00	no	Non-ideality coefficient of reverse collector current
vef	1.0e6	no	forward Early voltage (normalization volt.) (V)
ver	1.0e6	no	reverse Early voltage (normalization volt.) (V)
aver	0.0	no	bias dependence for reverse Early voltage
iqf	1.0e6	no	forward d.c. high-injection roll-off current (A)
fiqf	0	no	flag for turning on base related critical current
iqr	1.0e6	no	inverse d.c. high-injection roll-off current (A)
iqfh	1.0e6	no	high-injection correction current (A)
tfh	0.0	no	high-injection correction factor
ahq	0	no	Smoothing factor for the d.c. injection width
ibes	1e-18	no	BE saturation current (A)
mbe	1.0	no	BE non-ideality factor
ires	0.0	no	BE recombination saturation current (A)
mre	2.0	no	BE recombination non-ideality factor
ibcs	0.0	no	BC saturation current (A)
mbc	1.0	no	BC non-ideality factor
cje0	1.0e-20	no	Zero-bias BE depletion capacitance (F)
vde	0.9	no	BE built-in voltage (V)
ze	0.5	no	BE exponent factor
aje	2.5	no	Ratio of maximum to zero-bias value
vdedc	0.9	no	BE charge built-in voltage for d.c. transfer current (V)
zedc	0.5	no	charge BE exponent factor for d.c. transfer current
ajedc	2.5	no	BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current
t0	0.0	no	low current transit time at Vbici=0 (s)
dt0h	0.0	no	Base width modulation contribution (s)
tbvl	0.0	no	SCR width modulation contribution (s)
tef0	0.0	no	Storage time in neutral emitter (s)
gte	1.0	no	Exponent factor for emitter transit time
thcs	0.0	no	Saturation time at high current densities (s)
ahc	0.1	no	Smoothing factor for current dependence
tr	0.0	no	Storage time at inverse operation (s)
rci0	150	no	Low-field collector resistance under emitter (Ohm)
vlim	0.5	no	Voltage dividing ohmic and satur.region (V)
vpt	100	no	Punch-through voltage (V)
vces	0.1	no	Saturation voltage (V)
cjci0	1.0e-20	no	Total zero-bias BC depletion capacitance (F)
vdci	0.7	no	BC built-in voltage (V)
zci	0.333	no	BC exponent factor
vptci	100	no	Punch-through voltage of BC junction (V)
cjcx0	1.0e-20	no	Zero-bias external BC depletion capacitance (F)
vdcx	0.7	no	External BC built-in voltage (V)
zcx	0.333	no	External BC exponent factor
vptcx	100	no	Punch-through voltage (V)
fbc	1.0	no	Split factor = Cjci0/Cjc0
rbi0	0.0	no	Internal base resistance at zero-bias (Ohm)
vr0e	2.5	no	forward Early voltage (normalization volt.) (V)
vr0c	1.0e6	no	forward Early voltage (normalization volt.) (V)
fgeo	0.656	no	Geometry factor
rbx	0.0	no	External base series resistance (Ohm)
rcx	0.0	no	Emitter series resistance (Ohm)
re	0.0	no	External collector series resistance (Ohm)
itss	0.0	no	Substrate transistor transfer saturation current (A)
msf	1.0	no	Substrate transistor transfer current non-ideality factor
iscs	0.0	no	SC saturation current (A)
msc	1.0	no	SC non-ideality factor
cjs0	1.0e-20	no	Zero-bias SC depletion capacitance (F)
vds	0.3	no	SC built-in voltage (V)
zs	0.3	no	External SC exponent factor
vpts	100	no	SC punch-through voltage (V)
cbcpar	0.0	no	Collector-base isolation (overlap) capacitance (F)
cbepar	0.0	no	Emitter-base oxide capacitance (F)
eavl	0.0	no	Exponent factor
kavl	0.0	no	Prefactor
kf	0.0	no	flicker noise coefficient (M^(1-AF))
af	2.0	no	flicker noise exponent factor
vgb	1.2	no	Bandgap-voltage (V)
vge	1.17	no	Effective emitter bandgap-voltage (V)
vgc	1.17	no	Effective collector bandgap-voltage (V)
vgs	1.17	no	Effective substrate bandgap-voltage (V)
f1vg	-1.02377e-4	no	Coefficient K1 in T-dependent bandgap equation (V/K)
f2vg	4.3215e-4	no	Coefficient K2 in T-dependent bandgap equation (V/K)
alt0	0.0	no	Frist-order TC of tf0 (1/K)
kt0	0.0	no	Second-order TC of tf0 (1/K^2)
zetact	3.0	no	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	no	Exponent coefficient in BE junction current temperature dependence
zetaci	0.0	no	TC of epi-collector diffusivity
alvs	0.0	no	Relative TC of satur.drift velocity (1/K)
alces	0.0	no	Relative TC of vces (1/K)
zetarbi	0.0	no	TC of internal base resistance
zetarbx	0.0	no	TC of external base resistance
zetarcx	0.0	no	TC of external collector resistance
zetare	0.0	no	TC of emitter resistances
zetaiqf	0.0	no	TC of iqf
alkav	0.0	no	TC of avalanche prefactor (1/K)
aleav	0.0	no	TC of avalanche exponential factor (1/K)
zetarth	0.0	no	Exponent factor for temperature dependent thermal resistance
tef_temp	1	no	Flag for turning temperature dependence of tef0 on and off
zetaver	-1.0	no	TC of Reverse Early voltage
zetavgbe	1.0	no	TC of AVER
dvgbe	0.0	no	Bandgap difference between base and BE-junction
aliqfh	0	no	Frist-order TC of iqfh (1/K)
kiqfh	0	no	Second-order TC of iqfh (1/K^2)
flsh	0	no	Flag for self-heating calculation
rth	0.0	no	Thermal resistance (K/W)
cth	0.0	no	Thermal capacitance (Ws/K)
tnom	27	no	Temperature for which parameters are valid (C)
dt	0.0	no	Temperature change for particular transistor (K)
Temp	27	no	simulation temperature

Pnp Hicum L0 V1.3¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	pnp HICUM L0 v1.3
Descripció	HICUM Level 0 v1.3 verilog device
Schematic entry	`hicumL0V1p3`
Netlist entry	`T`
Tipus	AnalogComponent
Bitmap file	pnpsub_therm
Propietats	102
Category	verilog-a devices

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Tipus	pnp	Si	polarity [npn, pnp]
is	1.0e-16	no	(Modified) saturation current (A)
it_mod	0	no	Flag for using third order solution for transfer current
mcf	1.00	no	Non-ideality coefficient of forward collector current
mcr	1.00	no	Non-ideality coefficient of reverse collector current
vef	1.0e6	no	forward Early voltage (normalization volt.) (V)
ver	1.0e6	no	reverse Early voltage (normalization volt.) (V)
aver	0.0	no	bias dependence for reverse Early voltage
iqf	1.0e6	no	forward d.c. high-injection roll-off current (A)
fiqf	0	no	flag for turning on base related critical current
iqr	1.0e6	no	inverse d.c. high-injection roll-off current (A)
iqfh	1.0e6	no	high-injection correction current (A)
tfh	0.0	no	high-injection correction factor
ahq	0	no	Smoothing factor for the d.c. injection width
ibes	1e-18	no	BE saturation current (A)
mbe	1.0	no	BE non-ideality factor
ires	0.0	no	BE recombination saturation current (A)
mre	2.0	no	BE recombination non-ideality factor
ibcs	0.0	no	BC saturation current (A)
mbc	1.0	no	BC non-ideality factor
cje0	1.0e-20	no	Zero-bias BE depletion capacitance (F)
vde	0.9	no	BE built-in voltage (V)
ze	0.5	no	BE exponent factor
aje	2.5	no	Ratio of maximum to zero-bias value
vdedc	0.9	no	BE charge built-in voltage for d.c. transfer current (V)
zedc	0.5	no	charge BE exponent factor for d.c. transfer current
ajedc	2.5	no	BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current
t0	0.0	no	low current transit time at Vbici=0 (s)
dt0h	0.0	no	Base width modulation contribution (s)
tbvl	0.0	no	SCR width modulation contribution (s)
tef0	0.0	no	Storage time in neutral emitter (s)
gte	1.0	no	Exponent factor for emitter transit time
thcs	0.0	no	Saturation time at high current densities (s)
ahc	0.1	no	Smoothing factor for current dependence
tr	0.0	no	Storage time at inverse operation (s)
rci0	150	no	Low-field collector resistance under emitter (Ohm)
vlim	0.5	no	Voltage dividing ohmic and satur.region (V)
vpt	100	no	Punch-through voltage (V)
vces	0.1	no	Saturation voltage (V)
cjci0	1.0e-20	no	Total zero-bias BC depletion capacitance (F)
vdci	0.7	no	BC built-in voltage (V)
zci	0.333	no	BC exponent factor
vptci	100	no	Punch-through voltage of BC junction (V)
cjcx0	1.0e-20	no	Zero-bias external BC depletion capacitance (F)
vdcx	0.7	no	External BC built-in voltage (V)
zcx	0.333	no	External BC exponent factor
vptcx	100	no	Punch-through voltage (V)
fbc	1.0	no	Split factor = Cjci0/Cjc0
rbi0	0.0	no	Internal base resistance at zero-bias (Ohm)
vr0e	2.5	no	forward Early voltage (normalization volt.) (V)
vr0c	1.0e6	no	forward Early voltage (normalization volt.) (V)
fgeo	0.656	no	Geometry factor
rbx	0.0	no	External base series resistance (Ohm)
rcx	0.0	no	Emitter series resistance (Ohm)
re	0.0	no	External collector series resistance (Ohm)
itss	0.0	no	Substrate transistor transfer saturation current (A)
msf	1.0	no	Substrate transistor transfer current non-ideality factor
iscs	0.0	no	SC saturation current (A)
msc	1.0	no	SC non-ideality factor
cjs0	1.0e-20	no	Zero-bias SC depletion capacitance (F)
vds	0.3	no	SC built-in voltage (V)
zs	0.3	no	External SC exponent factor
vpts	100	no	SC punch-through voltage (V)
cbcpar	0.0	no	Collector-base isolation (overlap) capacitance (F)
cbepar	0.0	no	Emitter-base oxide capacitance (F)
eavl	0.0	no	Exponent factor
kavl	0.0	no	Prefactor
kf	0.0	no	flicker noise coefficient (M^(1-AF))
af	2.0	no	flicker noise exponent factor
vgb	1.2	no	Bandgap-voltage (V)
vge	1.17	no	Effective emitter bandgap-voltage (V)
vgc	1.17	no	Effective collector bandgap-voltage (V)
vgs	1.17	no	Effective substrate bandgap-voltage (V)
f1vg	-1.02377e-4	no	Coefficient K1 in T-dependent bandgap equation (V/K)
f2vg	4.3215e-4	no	Coefficient K2 in T-dependent bandgap equation (V/K)
alt0	0.0	no	Frist-order TC of tf0 (1/K)
kt0	0.0	no	Second-order TC of tf0 (1/K^2)
zetact	3.0	no	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	no	Exponent coefficient in BE junction current temperature dependence
zetaci	0.0	no	TC of epi-collector diffusivity
alvs	0.0	no	Relative TC of satur.drift velocity (1/K)
alces	0.0	no	Relative TC of vces (1/K)
zetarbi	0.0	no	TC of internal base resistance
zetarbx	0.0	no	TC of external base resistance
zetarcx	0.0	no	TC of external collector resistance
zetare	0.0	no	TC of emitter resistances
zetaiqf	0.0	no	TC of iqf
alkav	0.0	no	TC of avalanche prefactor (1/K)
aleav	0.0	no	TC of avalanche exponential factor (1/K)
zetarth	0.0	no	Exponent factor for temperature dependent thermal resistance
tef_temp	1	no	Flag for turning temperature dependence of tef0 on and off
zetaver	-1.0	no	TC of Reverse Early voltage
zetavgbe	1.0	no	TC of AVER
dvgbe	0.0	no	Bandgap difference between base and BE-junction
aliqfh	0	no	Frist-order TC of iqfh (1/K)
kiqfh	0	no	Second-order TC of iqfh (1/K^2)
flsh	0	no	Flag for self-heating calculation
rth	0.0	no	Thermal resistance (K/W)
cth	0.0	no	Thermal capacitance (Ws/K)
tnom	27	no	Temperature for which parameters are valid (C)
dt	0.0	no	Temperature change for particular transistor (K)
Temp	27	no	simulation temperature

Hicum L2 V2.23¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	HICUM L2 v2.23
Descripció	HICUM Level 2 v2.23 verilog device
Schematic entry	`hicumL2V2p23`
Netlist entry	`T`
Tipus	AnalogComponent
Bitmap file	npnsub_therm
Propietats	114
Category	verilog-a devices

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
c10	2.0E-30	no	GICCR constant (A^2s)
qp0	2.0E-14	no	Zero-bias hole charge (Coul)
ich	0.0	no	High-current correction for 2D and 3D effects (A)
hfe	1.0	no	Emitter minority charge weighting factor in HBTs
hfc	1.0	no	Collector minority charge weighting factor in HBTs
hjei	1.0	no	B-E depletion charge weighting factor in HBTs
hjci	1.0	no	B-C depletion charge weighting factor in HBTs
ibeis	1.0E-18	no	Internal B-E saturation current (A)
mbei	1.0	no	Internal B-E current ideality factor
ireis	0.0	no	Internal B-E recombination saturation current (A)
mrei	2.0	no	Internal B-E recombination current ideality factor
ibeps	0.0	no	Peripheral B-E saturation current (A)
mbep	1.0	no	Peripheral B-E current ideality factor
ireps	0.0	no	Peripheral B-E recombination saturation current (A)
mrep	2.0	no	Peripheral B-E recombination current ideality factor
mcf	1.0	no	Non-ideality factor for III-V HBTs
tbhrec	0.0	no	Base current recombination time constant at B-C barrier for high forward injection (s)
ibcis	1.0E-16	no	Internal B-C saturation current (A)
mbci	1.0	no	Internal B-C current ideality factor
ibcxs	0.0	no	External B-C saturation current (A)
mbcx	1.0	no	External B-C current ideality factor
ibets	0.0	no	B-E tunneling saturation current (A)
abet	40	no	Exponent factor for tunneling current
tunode	1	no	Specifies the base node connection for the tunneling current
favl	0.0	no	Avalanche current factor (1/V)
qavl	0.0	no	Exponent factor for avalanche current (Coul)
alfav	0.0	no	Relative TC for FAVL (1/K)
alqav	0.0	no	Relative TC for QAVL (1/K)
rbi0	0.0	no	Zero bias internal base resistance (Ohm)
rbx	0.0	no	External base series resistance (Ohm)
fgeo	0.6557	no	Factor for geometry dependence of emitter current crowding
fdqr0	0.0	no	Correction factor for modulation by B-E and B-C space charge layer
fcrbi	0.0	no	Ratio of HF shunt to total internal capacitance (lateral NQS effect)
fqi	1.0	no	Ration of internal to total minority charge
re	0.0	no	Emitter series resistance (Ohm)
rcx	0.0	no	External collector series resistance (Ohm)
itss	0.0	no	Substrate transistor transfer saturation current (A)
msf	1.0	no	Forward ideality factor of substrate transfer current
iscs	0.0	no	C-S diode saturation current (A)
msc	1.0	no	Ideality factor of C-S diode current
tsf	0.0	no	Transit time for forward operation of substrate transistor (s)
rsu	0.0	no	Substrate series resistance (Ohm)
csu	0.0	no	Substrate shunt capacitance (F)
cjei0	1.0E-20	no	Internal B-E zero-bias depletion capacitance (F)
vdei	0.9	no	Internal B-E built-in potential (V)
zei	0.5	no	Internal B-E grading coefficient
ajei	2.5	no	Ratio of maximum to zero-bias value of internal B-E capacitance
cjep0	1.0E-20	no	Peripheral B-E zero-bias depletion capacitance (F)
vdep	0.9	no	Peripheral B-E built-in potential (V)
zep	0.5	no	Peripheral B-E grading coefficient
ajep	2.5	no	Ratio of maximum to zero-bias value of peripheral B-E capacitance
cjci0	1.0E-20	no	Internal B-C zero-bias depletion capacitance (F)
vdci	0.7	no	Internal B-C built-in potential (V)
zci	0.4	no	Internal B-C grading coefficient
vptci	100	no	Internal B-C punch-through voltage (V)
cjcx0	1.0E-20	no	External B-C zero-bias depletion capacitance (F)
vdcx	0.7	no	External B-C built-in potential (V)
zcx	0.4	no	External B-C grading coefficient
vptcx	100	no	External B-C punch-through voltage (V)
fbcpar	0.0	no	Partitioning factor of parasitic B-C cap
fbepar	1.0	no	Partitioning factor of parasitic B-E cap
cjs0	0.0	no	C-S zero-bias depletion capacitance (F)
vds	0.6	no	C-S built-in potential (V)
zs	0.5	no	C-S grading coefficient
vpts	100	no	C-S punch-through voltage (V)
t0	0.0	no	Low current forward transit time at VBC=0V (s)
dt0h	0.0	no	Time constant for base and B-C space charge layer width modulation (s)
tbvl	0.0	no	Time constant for modelling carrier jam at low VCE (s)
tef0	0.0	no	Neutral emitter storage time (s)
gtfe	1.0	no	Exponent factor for current dependence of neutral emitter storage time
thcs	0.0	no	Saturation time constant at high current densities (s)
ahc	0.1	no	Smoothing factor for current dependence of base and collector transit time
fthc	0.0	no	Partitioning factor for base and collector portion
rci0	150	no	Internal collector resistance at low electric field (Ohm)
vlim	0.5	no	Voltage separating ohmic and saturation velocity regime (V)
vces	0.1	no	Internal C-E saturation voltage (V)
vpt	0.0	no	Collector punch-through voltage (V)
tr	0.0	no	Storage time for inverse operation (s)
cbepar	0.0	no	Total parasitic B-E capacitance (F)
cbcpar	0.0	no	Total parasitic B-C capacitance (F)
alqf	0.0	no	Factor for additional delay time of minority charge
alit	0.0	no	Factor for additional delay time of transfer current
flnqs	0	no	Flag for turning on and off of vertical NQS effect
kf	0.0	no	Flicker noise coefficient
af	2.0	no	Flicker noise exponent factor
cfbe	-1	no	Flag for determining where to tag the flicker noise source
latb	0.0	no	Scaling factor for collector minority charge in direction of emitter width
latl	0.0	no	Scaling factor for collector minority charge in direction of emitter length
vgb	1.17	no	Bandgap voltage extrapolated to 0 K (V)
alt0	0.0	no	First order relative TC of parameter T0 (1/K)
kt0	0.0	no	Second order relative TC of parameter T0
zetaci	0.0	no	Temperature exponent for RCI0
alvs	0.0	no	Relative TC of saturation drift velocity (1/K)
alces	0.0	no	Relative TC of VCES (1/K)
zetarbi	0.0	no	Temperature exponent of internal base resistance
zetarbx	0.0	no	Temperature exponent of external base resistance
zetarcx	0.0	no	Temperature exponent of external collector resistance
zetare	0.0	no	Temperature exponent of emitter resistance
zetacx	1.0	no	Temperature exponent of mobility in substrate transistor transit time
vge	1.17	no	Effective emitter bandgap voltage (V)
vgc	1.17	no	Effective collector bandgap voltage (V)
vgs	1.17	no	Effective substrate bandgap voltage (V)
f1vg	-1.02377e-4	no	Coefficient K1 in T-dependent band-gap equation
f2vg	4.3215e-4	no	Coefficient K2 in T-dependent band-gap equation
zetact	3.0	no	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	no	Exponent coefficient in B-E junction current temperature dependence
alb	0.0	no	Relative TC of forward current gain for V2.1 model (1/K)
flsh	0	no	Flag for turning on and off self-heating effect
rth	0.0	no	Thermal resistance (K/W)
cth	0.0	no	Thermal capacitance (J/W)
flcomp	0.0	no	Flag for compatibility with v2.1 model (0=v2.1)
tnom	27.0	no	Temperature at which parameters are specified (C)
dt	0.0	no	Temperature change w.r.t. chip temperature for particular transistor (K)
Temp	27	no	simulation temperature

Hicum L2 V2.24¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	HICUM L2 v2.24
Descripció	HICUM Level 2 v2.24 verilog device
Schematic entry	`hicumL2V2p24`
Netlist entry	`T`
Tipus	AnalogComponent
Bitmap file	npnsub_therm
Propietats	114
Category	verilog-a devices

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
c10	2.0E-30	no	GICCR constant (A^2s)
qp0	2.0E-14	no	Zero-bias hole charge (Coul)
ich	0.0	no	High-current correction for 2D and 3D effects (A)
hfe	1.0	no	Emitter minority charge weighting factor in HBTs
hfc	1.0	no	Collector minority charge weighting factor in HBTs
hjei	1.0	no	B-E depletion charge weighting factor in HBTs
hjci	1.0	no	B-C depletion charge weighting factor in HBTs
ibeis	1.0E-18	no	Internal B-E saturation current (A)
mbei	1.0	no	Internal B-E current ideality factor
ireis	0.0	no	Internal B-E recombination saturation current (A)
mrei	2.0	no	Internal B-E recombination current ideality factor
ibeps	0.0	no	Peripheral B-E saturation current (A)
mbep	1.0	no	Peripheral B-E current ideality factor
ireps	0.0	no	Peripheral B-E recombination saturation current (A)
mrep	2.0	no	Peripheral B-E recombination current ideality factor
mcf	1.0	no	Non-ideality factor for III-V HBTs
tbhrec	0.0	no	Base current recombination time constant at B-C barrier for high forward injection (s)
ibcis	1.0E-16	no	Internal B-C saturation current (A)
mbci	1.0	no	Internal B-C current ideality factor
ibcxs	0.0	no	External B-C saturation current (A)
mbcx	1.0	no	External B-C current ideality factor
ibets	0.0	no	B-E tunneling saturation current (A)
abet	40	no	Exponent factor for tunneling current
tunode	1	no	Specifies the base node connection for the tunneling current
favl	0.0	no	Avalanche current factor (1/V)
qavl	0.0	no	Exponent factor for avalanche current (Coul)
alfav	0.0	no	Relative TC for FAVL (1/K)
alqav	0.0	no	Relative TC for QAVL (1/K)
rbi0	0.0	no	Zero bias internal base resistance (Ohm)
rbx	0.0	no	External base series resistance (Ohm)
fgeo	0.6557	no	Factor for geometry dependence of emitter current crowding
fdqr0	0.0	no	Correction factor for modulation by B-E and B-C space charge layer
fcrbi	0.0	no	Ratio of HF shunt to total internal capacitance (lateral NQS effect)
fqi	1.0	no	Ration of internal to total minority charge
re	0.0	no	Emitter series resistance (Ohm)
rcx	0.0	no	External collector series resistance (Ohm)
itss	0.0	no	Substrate transistor transfer saturation current (A)
msf	1.0	no	Forward ideality factor of substrate transfer current
iscs	0.0	no	C-S diode saturation current (A)
msc	1.0	no	Ideality factor of C-S diode current
tsf	0.0	no	Transit time for forward operation of substrate transistor (s)
rsu	0.0	no	Substrate series resistance (Ohm)
csu	0.0	no	Substrate shunt capacitance (F)
cjei0	1.0E-20	no	Internal B-E zero-bias depletion capacitance (F)
vdei	0.9	no	Internal B-E built-in potential (V)
zei	0.5	no	Internal B-E grading coefficient
ajei	2.5	no	Ratio of maximum to zero-bias value of internal B-E capacitance
cjep0	1.0E-20	no	Peripheral B-E zero-bias depletion capacitance (F)
vdep	0.9	no	Peripheral B-E built-in potential (V)
zep	0.5	no	Peripheral B-E grading coefficient
ajep	2.5	no	Ratio of maximum to zero-bias value of peripheral B-E capacitance
cjci0	1.0E-20	no	Internal B-C zero-bias depletion capacitance (F)
vdci	0.7	no	Internal B-C built-in potential (V)
zci	0.4	no	Internal B-C grading coefficient
vptci	100	no	Internal B-C punch-through voltage (V)
cjcx0	1.0E-20	no	External B-C zero-bias depletion capacitance (F)
vdcx	0.7	no	External B-C built-in potential (V)
zcx	0.4	no	External B-C grading coefficient
vptcx	100	no	External B-C punch-through voltage (V)
fbcpar	0.0	no	Partitioning factor of parasitic B-C cap
fbepar	1.0	no	Partitioning factor of parasitic B-E cap
cjs0	0.0	no	C-S zero-bias depletion capacitance (F)
vds	0.6	no	C-S built-in potential (V)
zs	0.5	no	C-S grading coefficient
vpts	100	no	C-S punch-through voltage (V)
t0	0.0	no	Low current forward transit time at VBC=0V (s)
dt0h	0.0	no	Time constant for base and B-C space charge layer width modulation (s)
tbvl	0.0	no	Time constant for modelling carrier jam at low VCE (s)
tef0	0.0	no	Neutral emitter storage time (s)
gtfe	1.0	no	Exponent factor for current dependence of neutral emitter storage time
thcs	0.0	no	Saturation time constant at high current densities (s)
ahc	0.1	no	Smoothing factor for current dependence of base and collector transit time
fthc	0.0	no	Partitioning factor for base and collector portion
rci0	150	no	Internal collector resistance at low electric field (Ohm)
vlim	0.5	no	Voltage separating ohmic and saturation velocity regime (V)
vces	0.1	no	Internal C-E saturation voltage (V)
vpt	100.0	no	Collector punch-through voltage (V)
tr	0.0	no	Storage time for inverse operation (s)
cbepar	0.0	no	Total parasitic B-E capacitance (F)
cbcpar	0.0	no	Total parasitic B-C capacitance (F)
alqf	0.0	no	Factor for additional delay time of minority charge
alit	0.0	no	Factor for additional delay time of transfer current
flnqs	0	no	Flag for turning on and off of vertical NQS effect
kf	0.0	no	Flicker noise coefficient
af	2.0	no	Flicker noise exponent factor
cfbe	-1	no	Flag for determining where to tag the flicker noise source
latb	0.0	no	Scaling factor for collector minority charge in direction of emitter width
latl	0.0	no	Scaling factor for collector minority charge in direction of emitter length
vgb	1.17	no	Bandgap voltage extrapolated to 0 K (V)
alt0	0.0	no	First order relative TC of parameter T0 (1/K)
kt0	0.0	no	Second order relative TC of parameter T0
zetaci	0.0	no	Temperature exponent for RCI0
alvs	0.0	no	Relative TC of saturation drift velocity (1/K)
alces	0.0	no	Relative TC of VCES (1/K)
zetarbi	0.0	no	Temperature exponent of internal base resistance
zetarbx	0.0	no	Temperature exponent of external base resistance
zetarcx	0.0	no	Temperature exponent of external collector resistance
zetare	0.0	no	Temperature exponent of emitter resistance
zetacx	1.0	no	Temperature exponent of mobility in substrate transistor transit time
vge	1.17	no	Effective emitter bandgap voltage (V)
vgc	1.17	no	Effective collector bandgap voltage (V)
vgs	1.17	no	Effective substrate bandgap voltage (V)
f1vg	-1.02377e-4	no	Coefficient K1 in T-dependent band-gap equation
f2vg	4.3215e-4	no	Coefficient K2 in T-dependent band-gap equation
zetact	3.0	no	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	no	Exponent coefficient in B-E junction current temperature dependence
alb	0.0	no	Relative TC of forward current gain for V2.1 model (1/K)
flsh	0	no	Flag for turning on and off self-heating effect
rth	0.0	no	Thermal resistance (K/W)
cth	0.0	no	Thermal capacitance (J/W)
flcomp	0.0	no	Flag for compatibility with v2.1 model (0=v2.1)
tnom	27.0	no	Temperature at which parameters are specified (C)
dt	0.0	no	Temperature change w.r.t. chip temperature for particular transistor (K)
Temp	27.0	no	simulation temperature

Hicum L2 V2.31¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	HICUM L2 V2.31
Descripció	hicumL2V2p31n verilog device
Schematic entry	`hicumL2V2p31n`
Netlist entry	`T`
Tipus	AnalogComponent
Bitmap file	hicumL2V2p31n
Propietats	129
Category	verilog-a devices

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
c10	2.0E-30	no	GICCR constant (A^2s)
qp0	2.0E-14	no	Zero-bias hole charge (Coul)
ich	0.0	no	High-current correction for 2D and 3D effects (A)
hf0	1.0	no	Weight factor for the low current minority charge
hfe	1.0	no	Emitter minority charge weighting factor in HBTs
hfc	1.0	no	Collector minority charge weighting factor in HBTs
hjei	1.0	no	B-E depletion charge weighting factor in HBTs
ahjei	0.0	no	Parameter describing the slope of hjEi(VBE)
rhjei	1.0	no	Smoothing parameter for hjEi(VBE) at high voltage
hjci	1.0	no	B-C depletion charge weighting factor in HBTs
ibeis	1.0E-18	no	Internal B-E saturation current (A)
mbei	1.0	no	Internal B-E current ideality factor
ireis	0.0	no	Internal B-E recombination saturation current (A)
mrei	2.0	no	Internal B-E recombination current ideality factor
ibeps	0.0	no	Peripheral B-E saturation current (A)
mbep	1.0	no	Peripheral B-E current ideality factor
ireps	0.0	no	Peripheral B-E recombination saturation current (A)
mrep	2.0	no	Peripheral B-E recombination current ideality factor
mcf	1.0	no	Non-ideality factor for III-V HBTs
tbhrec	0.0	no	Base current recombination time constant at B-C barrier for high forward injection (s)
ibcis	1.0E-16	no	Internal B-C saturation current (A)
mbci	1.0	no	Internal B-C current ideality factor
ibcxs	0.0	no	External B-C saturation current (A)
mbcx	1.0	no	External B-C current ideality factor
ibets	0.0	no	B-E tunneling saturation current (A)
abet	40	no	Exponent factor for tunneling current
tunode	1	no	Specifies the base node connection for the tunneling current
favl	0.0	no	Avalanche current factor (1/V)
qavl	0.0	no	Exponent factor for avalanche current (Coul)
alfav	0.0	no	Relative TC for FAVL (1/K)
alqav	0.0	no	Relative TC for QAVL (1/K)
rbi0	0.0	no	Zero bias internal base resistance (Ohm)
rbx	0.0	no	External base series resistance (Ohm)
fgeo	0.6557	no	Factor for geometry dependence of emitter current crowding
fdqr0	0.0	no	Correction factor for modulation by B-E and B-C space charge layer
fcrbi	0.0	no	Ratio of HF shunt to total internal capacitance (lateral NQS effect)
fqi	1.0	no	Ration of internal to total minority charge
re	0.0	no	Emitter series resistance (Ohm)
rcx	0.0	no	External collector series resistance (Ohm)
itss	0.0	no	Substrate transistor transfer saturation current (A)
msf	1.0	no	Forward ideality factor of substrate transfer current
iscs	0.0	no	C-S diode saturation current (A)
msc	1.0	no	Ideality factor of C-S diode current
tsf	0.0	no	Transit time for forward operation of substrate transistor (s)
rsu	0.0	no	Substrate series resistance (Ohm)
csu	0.0	no	Substrate shunt capacitance (F)
cjei0	1.0E-20	no	Internal B-E zero-bias depletion capacitance (F)
vdei	0.9	no	Internal B-E built-in potential (V)
zei	0.5	no	Internal B-E grading coefficient
ajei	2.5	no	Ratio of maximum to zero-bias value of internal B-E capacitance
cjep0	1.0E-20	no	Peripheral B-E zero-bias depletion capacitance (F)
vdep	0.9	no	Peripheral B-E built-in potential (V)
zep	0.5	no	Peripheral B-E grading coefficient
ajep	2.5	no	Ratio of maximum to zero-bias value of peripheral B-E capacitance
cjci0	1.0E-20	no	Internal B-C zero-bias depletion capacitance (F)
vdci	0.7	no	Internal B-C built-in potential (V)
zci	0.4	no	Internal B-C grading coefficient
vptci	100	no	Internal B-C punch-through voltage (V)
cjcx0	1.0E-20	no	External B-C zero-bias depletion capacitance (F)
vdcx	0.7	no	External B-C built-in potential (V)
zcx	0.4	no	External B-C grading coefficient
vptcx	100	no	External B-C punch-through voltage (V)
fbcpar	0.0	no	Partitioning factor of parasitic B-C cap
fbepar	1.0	no	Partitioning factor of parasitic B-E cap
cjs0	0.0	no	C-S zero-bias depletion capacitance (F)
vds	0.6	no	C-S built-in potential (V)
zs	0.5	no	C-S grading coefficient
vpts	100	no	C-S punch-through voltage (V)
t0	0.0	no	Low current forward transit time at VBC=0V (s)
dt0h	0.0	no	Time constant for base and B-C space charge layer width modulation (s)
tbvl	0.0	no	Time constant for modeling carrier jam at low VCE (s)
tef0	0.0	no	Neutral emitter storage time (s)
gtfe	1.0	no	Exponent factor for current dependence of neutral emitter storage time
thcs	0.0	no	Saturation time constant at high current densities (s)
ahc	0.1	no	Smoothing factor for current dependence of base and collector transit time
fthc	0.0	no	Partitioning factor for base and collector portion
rci0	150	no	Internal collector resistance at low electric field (Ohm)
vlim	0.5	no	Voltage separating ohmic and saturation velocity regime (V)
vces	0.1	no	Internal C-E saturation voltage (V)
vpt	100.0	no	Collector punch-through voltage (V)
tr	0.0	no	Storage time for inverse operation (s)
vcbar	0.0	no	Barrier voltage (V)
icbar	0.0	no	Normalization parameter (A)
acbar	0.01	no	Smoothing parameter for barrier voltage
delck	2.0	no	fitting factor for critical current
cbepar	0.0	no	Total parasitic B-E capacitance (F)
cbcpar	0.0	no	Total parasitic B-C capacitance (F)
alqf	0.167	no	Factor for additional delay time of minority charge
alit	0.333	no	Factor for additional delay time of transfer current
flnqs	0	no	Flag for turning on and off of vertical NQS effect
kf	0.0	no	Flicker noise coefficient
af	2.0	no	Flicker noise exponent factor
cfbe	-1	no	Flag for determining where to tag the flicker noise source
flcono	0	no	Flag for turning on and off of correlated noise implementation
kfre	0.0	no	Emitter resistance flicker noise coefficient
afre	2.0	no	Emitter resistance flicker noise exponent factor
latb	0.0	no	Scaling factor for collector minority charge in direction of emitter width
latl	0.0	no	Scaling factor for collector minority charge in direction of emitter length
vgb	1.17	no	Bandgap voltage extrapolated to 0 K (V)
alt0	0.0	no	First order relative TC of parameter T0 (1/K)
kt0	0.0	no	Second order relative TC of parameter T0
zetaci	0.0	no	Temperature exponent for RCI0
alvs	0.0	no	Relative TC of saturation drift velocity (1/K)
alces	0.0	no	Relative TC of VCES (1/K)
zetarbi	0.0	no	Temperature exponent of internal base resistance
zetarbx	0.0	no	Temperature exponent of external base resistance
zetarcx	0.0	no	Temperature exponent of external collector resistance
zetare	0.0	no	Temperature exponent of emitter resistance
zetacx	1.0	no	Temperature exponent of mobility in substrate transistor transit time
vge	1.17	no	Effective emitter bandgap voltage (V)
vgc	1.17	no	Effective collector bandgap voltage (V)
vgs	1.17	no	Effective substrate bandgap voltage (V)
f1vg	-1.02377e-4	no	Coefficient K1 in T-dependent band-gap equation
f2vg	4.3215e-4	no	Coefficient K2 in T-dependent band-gap equation
zetact	3.0	no	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	no	Exponent coefficient in B-E junction current temperature dependence
alb	0.0	no	Relative TC of forward current gain for V2.1 model (1/K)
dvgbe	0	no	Bandgap difference between B and B-E junction used for hjEi0 and hf0 (V)
zetahjei	1	no	Temperature coefficient for ahjEi
zetavgbe	1	no	Temperature coefficient for hjEi0
flsh	0	no	Flag for turning on and off self-heating effect
rth	0.0	no	Thermal resistance (K/W)
zetarth	0.0	no	Temperature coefficient for Rth
alrth	0.0	no	First order relative TC of parameter Rth (1/K)
cth	0.0	no	Thermal capacitance (J/W)
flcomp	0.0	no	Flag for compatibility with v2.1 model (0=v2.1)
tnom	27.0	no	Temperature at which parameters are specified (C)
dt	0.0	no	Temperature change w.r.t. chip temperature for particular transistor (K)
Temp	27.0	no	simulation temperature

Photodiode¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Photodiode
Descripció	Photodiode verilog device
Schematic entry	`photodiode`
Netlist entry	`PD`
Tipus	AnalogComponent
Bitmap file	photodiode
Propietats	23
Category	verilog-a devices

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
N	1.35	no	photodiode emission coefficient
Rseries	1e-3	no	series lead resistance (Ohm)
Is	0.34e-12	no	diode dark current (A)
Bv	60	no	reverse breakdown voltage (V)
Ibv	1e-3	no	current at reverse breakdown voltage (A)
Vj	0.7	no	junction potential (V)
Cj0	60e-12	no	zero-bias junction capacitance (F)
M	0.5	no	coeficiente de graduación
Area	1.0	no	diode relative area
Tnom	26.85	no	parameter measurement temperature (Celsius)
Fc	0.5	no	coeficiente de pérdida de capacidad en polarización directa
Tt	10e-9	no	transit time (s)
Xti	3.0	no	exponente de temperatura de la corriente de saturación
Eg	1.16	no	energy gap (eV)
Responsivity	0.5	no	responsivity (A/W)
Rsh	5e8	no	shunt resistance (Ohm)
QEpercent	80	no	quantum efficiency (%)
Lambda	900	no	light wavelength (nm)
LEVEL	1	no	responsivity calculator selector
Kf	1e-12	no	coeficiente de ruido térmico
Af	1.0	no	exponente de ruido térmico
Ffe	1.0	no	exponente de freqüència de ruido térmico
Temp	26.85	no	simulation temperature

Phototransistor¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Phototransistor
Descripció	Phototransistor verilog device
Schematic entry	`phototransistor`
Netlist entry	`PT`
Tipus	AnalogComponent
Bitmap file	phototransistor
Propietats	30
Category	verilog-a devices

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Bf	100	no	ganancia (beta) directa
Br	0.1	no	ganancia (beta) inversa
Is	1e-10	no	dark current (A)
Nf	1	no	coeficiente de emisión directa
Nr	1	no	coeficiente de emisión inversa
Vaf	100	no	forward early voltage (V)
Var	100	no	reverse early voltage (V)
Mje	0.33	no	factor exponencial de la unión base-emisor
Vje	0.75	no	base-emitter junction built-in potential (V)
Cje	1e-12	no	base-emitter zero-bias depletion capacitance (F)
Mjc	0.33	no	factor exponencial de la unión base colector
Vjc	0.75	no	base-collector junction built-in potential (V)
Cjc	2e-12	no	base-collector zero-bias depletion capacitance (F)
Tr	100n	no	ideal reverse transit time (s)
Tf	0.1n	no	ideal forward transit time (s)
Ikf	10	no	high current corner for forward beta (A)
Ikr	10	no	high current corner for reverse beta (A)
Rc	10	no	collector series resistance (Ohm)
Re	1	no	emitter series resistance (Ohm)
Rb	100	no	base series resistance (Ohm)
Kf	1e-12	no	coeficiente de ruido térmico
Ffe	1	no	coeficiente de ruido térmico
Af	1	no	exponente de ruido térmico
Responsivity	1.5	no	responsivity at relative selectivity=100% (A/W)
P0	2.6122e3	no	relative selectivity polynomial coefficient
P1	-1.489e1	no	relative selectivity polynomial coefficient
P2	3.0332e-2	no	relative selectivity polynomial coefficient
P3	-2.5708e-5	no	relative selectivity polynomial coefficient
P4	7.6923e-9	no	relative selectivity polynomial coefficient
Temp	26.85	no	simulation temperature

Nigbt¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	NIGBT
Descripció	NIGBT verilog device
Schematic entry	`nigbt`
Netlist entry	`T`
Tipus	AnalogComponent
Bitmap file	nigbt
Propietats	19
Category	verilog-a devices

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Agd	5.0e-6	no	gate-drain overlap area (m**2)
Area	1.0e-5	no	area of the device (m**2)
Kp	0.38	no	MOS transconductance (A/V**2)
Tau	7.1e-6	no	ambipolar recombination lifetime (s)
Wb	9.0e-5	no	metallurgical base width (m)
BVf	1.0	no	avalanche uniformity factor
BVn	4.0	no	avalanche multiplication exponent
Cgs	1.24e-8	no	gate-source capacitance per unit area (F/cm**2)
Coxd	3.5e-8	no	gate-drain oxide capacitance per unit area (F/cm**2)
Jsne	6.5e-13	no	emitter saturation current density (A/cm**2)
Kf	1.0	no	triode region factor
Mun	1.5e-3	no	electron mobility (cm**2/Vs)
Mup	4.5e-2	no	hole mobility (cm**2/Vs)
Nb	2.0e14	no	base doping (1/cm**3)
Theta	0.02	no	transverse field factor (1/V)
Vt	4.7	no	threshold voltage (V)
Vtd	1.0e-3	no	gate-drain overlap depletion threshold (V)
Tnom	26.85	no	parameter measurement temperature (Celsius)
Temp	26.85	no	simulation temperature (Celsius)

Voltage Controlled Resistor¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Voltage Controlled Resistor
Descripció	fuente de tensión controlada por tensión
Schematic entry	`vcresistor`
Netlist entry	`VCR`
Tipus	AnalogComponent
Bitmap file	vcresistor
Propietats	1
Category	verilog-a devices

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
gain	1	Si	resistance gain

Digital Components¶

Digital Source¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	fuente digital
Descripció	fuente digital
Schematic entry	`DigiSource`
Netlist entry	`S`
Tipus	Componente
Bitmap file	digi_source
Propietats	4
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Num	1	Si	número de la conexión
init	low	no	initial output value [low, high]
times	1ns; 1ns	no	llista de veces que se cambia el valor de salida
V	1 V	no	tensión de alto nivel

Inversor¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Inversor
Descripció	inversor lógico
Schematic entry	`Inv`
Netlist entry	`Y`
Tipus	Componente
Bitmap file	inverter
Propietats	4
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
V	1 V	no	tensión de alto nivel
t	0	no	temps de retardo
TR	10	no	transfer function scaling factor
Symbol	old	no	schematic symbol [old, DIN40900]

N-Port Or¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	puerto-n OR
Descripció	OR lógico
Schematic entry	`OR`
Netlist entry	`Y`
Tipus	Componente
Bitmap file	or
Propietats	5
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
in	2	no	número de puertos de entrada
V	1 V	no	tensión de alto nivel
t	0	no	temps de retardo
TR	10	no	transfer function scaling factor
Symbol	old	no	schematic symbol [old, DIN40900]

N-Port Nor¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	puerto-n NOR
Descripció	NOR lógico
Schematic entry	`NOR`
Netlist entry	`Y`
Tipus	Componente
Bitmap file	nor
Propietats	5
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
in	2	no	número de puertos de entrada
V	1 V	no	tensión de alto nivel
t	0	no	temps de retardo
TR	10	no	transfer function scaling factor
Symbol	old	no	schematic symbol [old, DIN40900]

N-Port And¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	puerto-n AND
Descripció	AND lógico
Schematic entry	`AND`
Netlist entry	`Y`
Tipus	Componente
Bitmap file	and
Propietats	5
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
in	2	no	número de puertos de entrada
V	1 V	no	tensión de alto nivel
t	0	no	temps de retardo
TR	10	no	transfer function scaling factor
Symbol	old	no	schematic symbol [old, DIN40900]

N-Port Nand¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	puerto-n NAND
Descripció	NAND lógico
Schematic entry	`NAND`
Netlist entry	`Y`
Tipus	Componente
Bitmap file	nand
Propietats	5
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
in	2	no	número de puertos de entrada
V	1 V	no	tensión de alto nivel
t	0	no	temps de retardo
TR	10	no	transfer function scaling factor
Symbol	old	no	schematic symbol [old, DIN40900]

N-Port Xor¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	puerto-n XOR
Descripció	XOR lógico
Schematic entry	`XOR`
Netlist entry	`Y`
Tipus	Componente
Bitmap file	xor
Propietats	5
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
in	2	no	número de puertos de entrada
V	1 V	no	tensión de alto nivel
t	0	no	temps de retardo
TR	10	no	transfer function scaling factor
Symbol	old	no	schematic symbol [old, DIN40900]

N-Port Xnor¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	puerto-n XNOR
Descripció	XNOR lógico
Schematic entry	`XNOR`
Netlist entry	`Y`
Tipus	Componente
Bitmap file	xnor
Propietats	5
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
in	2	no	número de puertos de entrada
V	1 V	no	tensión de alto nivel
t	0	no	temps de retardo
TR	10	no	transfer function scaling factor
Symbol	old	no	schematic symbol [old, DIN40900]

Buffer¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Buffer
Descripció	logical buffer
Schematic entry	`Buf`
Netlist entry	`Y`
Tipus	Componente
Bitmap file	buffer
Propietats	4
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
V	1 V	no	tensión de alto nivel
t	0	no	temps de retardo
TR	10	no	transfer function scaling factor
Symbol	old	no	schematic symbol [old, DIN40900]

4X2 Andor¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	4x2 AndOr
Descripció	4x2 andor verilog device
Schematic entry	`andor4x2`
Netlist entry	`Y`
Tipus	Componente
Bitmap file	andor4x2
Propietats	2
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
TR	6	no	transfer function high scaling factor
Delay	1 ns	no	output delay (s)

4X3 Andor¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	4x3 AndOr
Descripció	4x3 andor verilog device
Schematic entry	`andor4x3`
Netlist entry	`Y`
Tipus	Componente
Bitmap file	andor4x3
Propietats	2
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
TR	6	no	transfer function high scaling factor
Delay	1 ns	no	output delay (s)

4X4 Andor¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	4x4 AndOr
Descripció	4x4 andor verilog device
Schematic entry	`andor4x4`
Netlist entry	`Y`
Tipus	Componente
Bitmap file	andor4x4
Propietats	2
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
TR	6	no	transfer function high scaling factor
Delay	1 ns	no	output delay (s)

2To1 Mux¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	2to1 Mux
Descripció	2to1 multiplexer verilog device
Schematic entry	`mux2to1`
Netlist entry	`Y`
Tipus	Componente
Bitmap file	mux2to1
Propietats	2
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
TR	6	no	transfer function high scaling factor
Delay	1 ns	no	output delay (s)

4To1 Mux¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	4to1 Mux
Descripció	4to1 multiplexer verilog device
Schematic entry	`mux4to1`
Netlist entry	`Y`
Tipus	Componente
Bitmap file	mux4to1
Propietats	2
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
TR	6	no	transfer function high scaling factor
Delay	1 ns	no	output delay (s)

8To1 Mux¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	8to1 Mux
Descripció	8to1 multiplexer verilog device
Schematic entry	`mux8to1`
Netlist entry	`Y`
Tipus	Componente
Bitmap file	mux8to1
Propietats	2
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
TR	6	no	transfer function high scaling factor
Delay	1 ns	no	output delay (s)

2To4 Demux¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	2to4 Demux
Descripció	2to4 demultiplexer verilog device
Schematic entry	`dmux2to4`
Netlist entry	`Y`
Tipus	Componente
Bitmap file	dmux2to4
Propietats	2
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
TR	6	no	transfer function high scaling factor
Delay	1 ns	no	output delay (s)

3To8 Demux¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	3to8 Demux
Descripció	3to8 demultiplexer verilog device
Schematic entry	`dmux3to8`
Netlist entry	`Y`
Tipus	Componente
Bitmap file	dmux3to8
Propietats	2
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
TR	6	no	transfer function high scaling factor
Delay	1 ns	no	output delay (s)

4To16 Demux¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	4to16 Demux
Descripció	4to16 demultiplexer verilog device
Schematic entry	`dmux4to16`
Netlist entry	`Y`
Tipus	Componente
Bitmap file	dmux4to16
Propietats	2
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
TR	6	no	transfer function high scaling factor
Delay	1 ns	no	output delay (s)

1Bit Halfadder¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	1Bit HalfAdder
Descripció	1bit half adder verilog device
Schematic entry	`ha1b`
Netlist entry	`Y`
Tipus	Componente
Bitmap file	ha1b
Propietats	2
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
TR	6	no	transfer function high scaling factor
Delay	1 ns	no	output delay (s)

1Bit Fulladder¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	1Bit FullAdder
Descripció	1bit full adder verilog device
Schematic entry	`fa1b`
Netlist entry	`Y`
Tipus	Componente
Bitmap file	fa1b
Propietats	2
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
TR	6	no	transfer function high scaling factor
Delay	1 ns	no	output delay (s)

2Bit Fulladder¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	2Bit FullAdder
Descripció	2bit full adder verilog device
Schematic entry	`fa2b`
Netlist entry	`Y`
Tipus	Componente
Bitmap file	fa2b
Propietats	2
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
TR	6	no	transfer function high scaling factor
Delay	1 ns	no	output delay (s)

Rs-Flipflop¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Biestable RS
Descripció	Biestable RS
Schematic entry	`RSFF`
Netlist entry	`Y`
Tipus	DigitalComponent
Bitmap file	rsflipflop
Propietats	1
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
t	0	no	temps de retardo

D-Flipflop¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Biestable-D
Descripció	Biestable D amb reset asíncrono
Schematic entry	`DFF`
Netlist entry	`Y`
Tipus	DigitalComponent
Bitmap file	dflipflop
Propietats	1
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
t	0	no	temps de retardo

D-Flipflop W/ Sr¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	D-FlipFlop w/ SR
Descripció	D flip flop with set and reset verilog device
Schematic entry	`dff_SR`
Netlist entry	`Y`
Tipus	Componente
Bitmap file	dff_SR
Propietats	3
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
TR_H	6	no	cross coupled gate transfer function high scaling factor
TR_L	5	no	cross coupled gate transfer function low scaling factor
Delay	1 ns	no	cross coupled gate delay (s)

Jk-Flipflop¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Biestable JK
Descripció	Biestable JK amb set y reset asíncronos
Schematic entry	`JKFF`
Netlist entry	`Y`
Tipus	DigitalComponent
Bitmap file	jkflipflop
Propietats	1
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
t	0	no	temps de retardo

Jk-Flipflop W/ Sr¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	JK-FlipFlop w/ SR
Descripció	jk flip flop with set and reset verilog device
Schematic entry	`jkff_SR`
Netlist entry	`Y`
Tipus	Componente
Bitmap file	jkff_SR
Propietats	3
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
TR_H	6	no	cross coupled gate transfer function high scaling factor
TR_L	5	no	cross coupled gate transfer function low scaling factor
Delay	1 ns	no	cross coupled gate delay (s)

T-Flipflop W/ Sr¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	T-FlipFlop w/ SR
Descripció	T flip flop with set and reset verilog device
Schematic entry	`tff_SR`
Netlist entry	`Y`
Tipus	Componente
Bitmap file	tff_SR
Propietats	3
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
TR_H	6	no	cross coupled gate transfer function high scaling factor
TR_L	5	no	cross coupled gate transfer function low scaling factor
Delay	1 ns	no	cross coupled gate delay (s)

Gated D-Latch¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Gated D-Latch
Descripció	gated D latch verilog device
Schematic entry	`gatedDlatch`
Netlist entry	`Y`
Tipus	Componente
Bitmap file	gatedDlatch
Propietats	3
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
TR_H	6	no	cross coupled gate transfer function high scaling factor
TR_L	5	no	cross coupled gate transfer function low scaling factor
Delay	1 ns	no	cross coupled gate delay (s)

Logic 0¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Logic 0
Descripció	logic 0 verilog device
Schematic entry	`logic_0`
Netlist entry	`S`
Tipus	Componente
Bitmap file	logic_0
Propietats	1
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
LEVEL	0	no	logic 0 voltage level (V)

Logic 1¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Logic 1
Descripció	logic 1 verilog device
Schematic entry	`logic_1`
Netlist entry	`S`
Tipus	Componente
Bitmap file	logic_1
Propietats	1
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
LEVEL	1	no	logic 1 voltage level (V)

2Bit Pattern¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	2Bit Pattern
Descripció	2bit pattern generator verilog device
Schematic entry	`pad2bit`
Netlist entry	`Y`
Tipus	Componente
Bitmap file	pad2bit
Propietats	1
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Number	0	no	pad output value

3Bit Pattern¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	3Bit Pattern
Descripció	3bit pattern generator verilog device
Schematic entry	`pad3bit`
Netlist entry	`Y`
Tipus	Componente
Bitmap file	pad3bit
Propietats	1
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Number	0	no	pad output value

4Bit Pattern¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	4Bit Pattern
Descripció	4bit pattern generator verilog device
Schematic entry	`pad4bit`
Netlist entry	`Y`
Tipus	Componente
Bitmap file	pad4bit
Propietats	1
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Number	0	no	pad output value

A2D Level Shifter¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	A2D Level Shifter
Descripció	data voltage level shifter (analogue to digital) verilog device
Schematic entry	`DLS_nto1`
Netlist entry	`Y`
Tipus	AnalogComponent
Bitmap file	DLS_nto1
Propietats	2
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
LEVEL	5 V	no	voltage level (V)
Delay	1 ns	no	time delay (s)

D2A Level Shifter¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	D2A Level Shifter
Descripció	data voltage level shifter (digital to analogue) verilog device
Schematic entry	`DLS_1ton`
Netlist entry	`Y`
Tipus	AnalogComponent
Bitmap file	DLS_1ton
Propietats	2
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
LEVEL	5 V	no	voltage level
Delay	1 ns	no	time delay (s)

4Bit Bin2Grey¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	4Bit Bin2Grey
Descripció	4bit binary to grey converter verilog device
Schematic entry	`binarytogrey4bit`
Netlist entry	`Y`
Tipus	Componente
Bitmap file	binarytogrey4bit
Propietats	2
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
TR	6	no	transfer function scaling factor
Delay	1 ns	no	output delay (s)

4Bit Grey2Bin¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	4Bit Grey2Bin
Descripció	4bit grey to binary converter verilog device
Schematic entry	`greytobinary4bit`
Netlist entry	`Y`
Tipus	Componente
Bitmap file	greytobinary4bit
Propietats	2
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
TR	6	no	transfer function scaling factor
Delay	1 ns	no	output delay (s)

1Bit Comparator¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	1Bit Comparator
Descripció	1bit comparator verilog device
Schematic entry	`comp_1bit`
Netlist entry	`Y`
Tipus	Componente
Bitmap file	comp_1bit
Propietats	2
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
TR	6	no	transfer function high scaling factor
Delay	1 ns	no	output delay (s)

2Bit Comparator¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	2Bit Comparator
Descripció	2bit comparator verilog device
Schematic entry	`comp_2bit`
Netlist entry	`Y`
Tipus	Componente
Bitmap file	comp_2bit
Propietats	2
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
TR	6	no	transfer function high scaling factor
Delay	1 ns	no	output delay (s)

4Bit Comparator¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	4Bit Comparator
Descripció	4bit comparator verilog device
Schematic entry	`comp_4bit`
Netlist entry	`Y`
Tipus	Componente
Bitmap file	comp_4bit
Propietats	2
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
TR	6	no	transfer function high scaling factor
Delay	1 ns	no	output delay (s)

4Bit Hpri-Bin¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	4Bit HPRI-Bin
Descripció	4bit highest priority encoder (binary form) verilog device
Schematic entry	`hpribin4bit`
Netlist entry	`Y`
Tipus	Componente
Bitmap file	hpribin4bit
Propietats	2
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
TR	6	no	transfer function scaling factor
Delay	1 ns	no	output delay (s)

Vhdl File¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Fitxer VHDL
Descripció	Fitxer VHDL
Schematic entry	`VHDL`
Netlist entry	`X`
Tipus	DigitalComponent
Bitmap file	vhdlfile
Propietats	1
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
File	sub.vhdl	no	Nom del fitxer VHDL

Verilog File¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Verilog file
Descripció	Verilog file
Schematic entry	`Verilog`
Netlist entry	`X`
Tipus	DigitalComponent
Bitmap file	vhdlfile
Propietats	1
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
File	sub.v	no	Name of Verilog file

Digital Simulation¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	simulación digital
Descripció	simulación digital
Schematic entry	`.Digi`
Netlist entry	`Digi`
Tipus	DigitalComponent
Bitmap file	digi
Propietats	3
Category	digital components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Tipus	TruthTable	Si	type of simulation [TruthTable, TimeList]
time	10 ns	no	duración de la simulación de la Lista de Tiempos
Model	VHDL	no	netlist format [VHDL, Verilog]

File Components¶

Spice Netlist¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	netlist SPICE
Descripció	fitxer netlist SPICE
Schematic entry	`SPICE`
Netlist entry	`X`
Tipus	AnalogComponent
Bitmap file	spicefile
Propietats	4
Category	file components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
File		Si	x
Ports		no	x
Sim	Si	no	x
Preprocessor	none	no	x

1-Port S Parameter File¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	fitxer de parámetros S de 1-conexión
Descripció	fitxer del parámetro S
Schematic entry	`SPfile`
Netlist entry	`X`
Tipus	AnalogComponent
Bitmap file	spfile1
Propietats	5
Category	file components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
File	test.s1p	Si	nombre del fitxer del parámetro s
Dades	rectangular	no	data type [rectangular, polar]
Interpolator	lineal	no	interpolation type [linear, cubic]
duringDC	open	no	representation during DC analysis [open, short, shortall, unspecified]
Ports	1	no	número de conexiones

2-Port S Parameter File¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	fitxer de parámetros S de 2-conexiones
Descripció	fitxer del parámetro S
Schematic entry	`SPfile`
Netlist entry	`X`
Tipus	AnalogComponent
Bitmap file	spfile2
Propietats	5
Category	file components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
File	test.s2p	Si	nombre del fitxer del parámetro s
Dades	rectangular	no	data type [rectangular, polar]
Interpolator	lineal	no	interpolation type [linear, cubic]
duringDC	open	no	representation during DC analysis [open, short, shortall, unspecified]
Ports	2	no	número de conexiones

N-Port S Parameter File¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	fitxer de parámetros S de n-conexiones
Descripció	fitxer del parámetro S
Schematic entry	`SPfile`
Netlist entry	`X`
Tipus	AnalogComponent
Bitmap file	spfile3
Propietats	5
Category	file components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
File	test.s3p	Si	nombre del fitxer del parámetro s
Dades	rectangular	no	data type [rectangular, polar]
Interpolator	lineal	no	interpolation type [linear, cubic]
duringDC	open	no	representation during DC analysis [open, short, shortall, unspecified]
Ports	3	no	número de conexiones

Subcircuito¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Subcircuito
Descripció	subcircuit
Schematic entry	`Sub`
Netlist entry	`SUB`
Tipus	Componente
Bitmap file	subcircuit
Propietats	1
Category	file components

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
File		no	nombre del fitxer del esquema qucs

Simulations¶

Dc Simulation¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	simulación dc
Descripció	simulación dc
Schematic entry	`.DC`
Netlist entry	`DC`
Tipus	AnalogComponent
Bitmap file	dc
Propietats	9
Category	simulations

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Temp	26.85	no	temperatura de simulación en grados Celsius
reltol	0.001	no	tolerancia relativa para converger
abstol	1 pA	no	tolerancia absoluta para les intensidades
vntol	1 uV	no	tolerancia absoluta para les tensiones
saveOPs	no	no	put operating points into dataset [yes, no]
MaxIter	150	no	numero máximo de les iteraciones antes de un error
saveAll	no	no	save subcircuit nodes into dataset [yes, no]
convHelper	none	no	preferred convergence algorithm [none, gMinStepping, SteepestDescent, LineSearch, Attenuation, SourceStepping]
Solver	CroutLU	no	method for solving the circuit matrix [CroutLU, DoolittleLU, HouseholderQR, HouseholderLQ, GolubSVD]

Transient Simulation¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Simulació transitoria
Descripció	simulación transitoria
Schematic entry	`.TR`
Netlist entry	`TR`
Tipus	AnalogComponent
Bitmap file	tran
Propietats	20
Category	simulations

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Tipus	lin	Si	sweep type [lin, log, list, const]
Start	0	Si	temps de inici en segundos
Stop	1 ms	Si	temps de paro en segundos
Points	11	no	número de pasos de temps de la simulación
IntegrationMethod	Trapezoidal	no	integration method [Euler, Trapezoidal, Gear, AdamsMoulton]
Order	2	no	order of integration method (1-6)
InitialStep	1 ns	no	tamaño del pas inicial en segundos
MinStep	1e-16	no	tamaño del pas mínimo en segundos
MaxIter	150	no	numero máximo de les iteraciones antes de un error
reltol	0.001	no	tolerancia relativa para converger
abstol	1 pA	no	tolerancia absoluta para les intensidades
vntol	1 uV	no	tolerancia absoluta para les tensiones
Temp	26.85	no	temperatura de simulación en grados Celsius
LTEreltol	1e-3	no	tolerancia relativa del error de redondeo local
LTEabstol	1e-6	no	tolerancia absoluta del error de redondeo local
LTEfactor	1	no	sobrestimación del error de redondeo local
Solver	CroutLU	no	method for solving the circuit matrix [CroutLU, DoolittleLU, HouseholderQR, HouseholderLQ, GolubSVD]
relaxTSR	no	no	relax time step raster [no, yes]
initialDC	Si	no	perform an initial DC analysis [yes, no]
MaxStep	0	no	maximum step size in seconds

Ac Simulation¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	simulación ac
Descripció	simulación ac
Schematic entry	`.AC`
Netlist entry	`AC`
Tipus	AnalogComponent
Bitmap file	ac
Propietats	5
Category	simulations

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Tipus	lin	Si	sweep type [lin, log, list, const]
Start	1 GHz	Si	freqüència de inici en Hertzios
Stop	10 GHz	Si	freqüència de parada en Hertzios
Points	19	Si	número de pasos en la simulación
Noise	no	no	calculate noise voltages [yes, no]

S-Parameter Simulation¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	simulación del parámetro S
Descripció	simulación del parámetro S
Schematic entry	`.SP`
Netlist entry	`SP`
Tipus	AnalogComponent
Bitmap file	sparameter
Propietats	9
Category	simulations

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Tipus	lin	Si	sweep type [lin, log, list, const]
Start	1 GHz	Si	freqüència de inici en Hertzios
Stop	10 GHz	Si	freqüència de parada en Hertzios
Points	19	Si	número de pasos en la simulación
Noise	no	no	calculate noise parameters [yes, no]
NoiseIP	1	no	conexión de entrada para la figura de ruido
NoiseOP	2	no	conexión de salida para la figura de ruido
saveCVs	no	no	put characteristic values into dataset [yes, no]
saveAll	no	no	save subcircuit characteristic values into dataset [yes, no]

Harmonic Balance¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Equilibrio armónico
Descripció	Simulació de equilibrio armónico
Schematic entry	`.HB`
Netlist entry	`HB`
Tipus	AnalogComponent
Bitmap file	hb
Propietats	6
Category	simulations

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
f	1 GHz	no	freqüència en Hertzios
n	4	Si	número de armónicos
iabstol	1 pA	no	tolerancia absoluta para les intensidades
vabstol	1 uV	no	tolerancia absoluta para les tensiones
reltol	0.001	no	tolerancia relativa para converger
MaxIter	150	no	numero máximo de les iteraciones antes de un error

Parameter Sweep¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	Paràmetre de barrido
Descripció	Paràmetre de barrido
Schematic entry	`.SW`
Netlist entry	`SW`
Tipus	AnalogComponent
Bitmap file	sweep
Propietats	6
Category	simulations

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Sim		Si	simulación a realizar antes de activar el parámetro de barrido
Tipus	lin	Si	sweep type [lin, log, list, const]
Param	R1	Si	parámetro para el barrido
Start	5 Ohm	Si	valor de inici para el barrido
Stop	50 Ohm	Si	valor final para el barrido
Points	20	Si	número de pasos en la simulación

Digital Simulation¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	simulación digital
Descripció	simulación digital
Schematic entry	`.Digi`
Netlist entry	`Digi`
Tipus	DigitalComponent
Bitmap file	digi
Propietats	3
Category	simulations

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Tipus	TruthTable	Si	type of simulation [TruthTable, TimeList]
time	10 ns	no	duración de la simulación de la Lista de Tiempos
Model	VHDL	no	netlist format [VHDL, Verilog]

Optimización¶

Symbol¶

Component Data¶

Component Data
Field	Valor
Caption	optimización
Descripció	Optimización
Schematic entry	`.Opt`
Netlist entry	`Opt`
Tipus	AnalogComponent
Bitmap file	optimize
Propietats	2
Category	simulations

Paràmetres del componente¶

Default Parameters
Nom	Valor	Display	Descripció
Sim		no
DE	3\|50\|2\|20\|0.85\|1\|3\|1e-6\|10\|100	no