Component Reference¶

Lumped Components¶

Odpor¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Odpor
Popis	Odpor
Schematic entry	`R`
Netlist entry	`R`
Typ	AnalogComponent
Bitmap file	Odpor
vlastnosti	6
Category	lumped components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
R	50 Ohm	ano	Ohmický odpor v Ohmech
Temp	26.85	ne	teplota při simulaci ve °C
Tc1	0.0	ne	teplotní koeficient prvního řádu
Tc2	0.0	ne	teplotní koeficient druhého řádu
Tnom	26.85	ne	teplota při které byly extrahovány parametry modelu
Symbol	european	ne	schematic symbol [european, US]

Resistor Us¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Odpor US
Popis	Odpor
Schematic entry	`R`
Netlist entry	`R`
Typ	AnalogComponent
Bitmap file	resistor_us
vlastnosti	6
Category	lumped components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
R	50 Ohm	ano	Ohmický odpor v Ohmech
Temp	26.85	ne	teplota při simulaci ve °C
Tc1	0.0	ne	teplotní koeficient prvního řádu
Tc2	0.0	ne	teplotní koeficient druhého řádu
Tnom	26.85	ne	teplota při které byly extrahovány parametry modelu
Symbol	US	ne	schematic symbol [european, US]

Kondenzátor¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Kondenzátor
Popis	kondenzátor
Schematic entry	`C`
Netlist entry	`C`
Typ	AnalogComponent
Bitmap file	kondenzátor
vlastnosti	3
Category	lumped components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
C	1 pF	ano	kapazita ve Faradech
V		ne	počáteční napětí pro přechodovou simulaci
Symbol	neutral	ne	schematic symbol [neutral, polar]

Cívka¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Cívka
Popis	cívka
Schematic entry	`L`
Netlist entry	`L`
Typ	AnalogComponent
Bitmap file	cívka
vlastnosti	2
Category	lumped components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
L	1 nH	ano	induktivita v Henrech
I		ne	počáteční proud pro přechodovou simulaci

Země¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Země
Popis	zem (referenční potenciál)
Schematic entry	`GND`
Netlist entry
Typ	Komponenta
Bitmap file	gnd
vlastnosti	0
Category	lumped components

Port podobvodu¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Port podobvodu
Popis	port podobvodu
Schematic entry	`Port`
Netlist entry	`P`
Typ	Komponenta
Bitmap file	subport
vlastnosti	2
Category	lumped components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Num	1	ano	číslo portu uvnitř podobvodu
Typ	analog	ne	type of the port (for digital simulation only) [analog, in, out, inout]

Transformátor¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Transformátor
Popis	ideální transformátor
Schematic entry	`Tr`
Netlist entry	`Tr`
Typ	AnalogComponent
Bitmap file	transformer
vlastnosti	1
Category	lumped components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
T	1	ano	transformační poměr napětí

Symmetric Transformer¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	symetrický transformátor
Popis	ideální symetrický transformátor
Schematic entry	`sTr`
Netlist entry	`Tr`
Typ	AnalogComponent
Bitmap file	symtrans
vlastnosti	2
Category	lumped components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
T1	1	ano	transformační poměr napětí jádra 1
T2	1	ano	transformační poměr napětí jádra 2

Dc Block¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	DC uzávěra
Popis	DC blokace
Schematic entry	`DCBlock`
Netlist entry	`C`
Typ	AnalogComponent
Bitmap file	dcblock
vlastnosti	1
Category	lumped components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
C	1 uF	ne	pro přechodovou simulaci: kapazität ve faradech

Dc Feed¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	DC přívod
Popis	DC přívod
Schematic entry	`DCFeed`
Netlist entry	`L`
Typ	AnalogComponent
Bitmap file	dcfeed
vlastnosti	1
Category	lumped components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
L	1 uH	ne	pro přechodovou simulaci: induktivita v Henry

Bias T¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Bias T
Popis	Bias T
Schematic entry	`BiasT`
Netlist entry	`X`
Typ	AnalogComponent
Bitmap file	biast
vlastnosti	2
Category	lumped components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
L	1 uH	ne	pro přechodovou simulaci: induktivita v Henry
C	1 uF	ne	pro přechodovou simulaci: kapazität ve faradech

Útlumový člen¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Útlumový člen
Popis	útlumový člen
Schematic entry	`Attenuator`
Netlist entry	`X`
Typ	AnalogComponent
Bitmap file	útlumový člen
vlastnosti	3
Category	lumped components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
L	10 dB	ano	výkonový útlum
Zref	50 Ohm	ne	referenční impedance
Temp	26.85	ne	teplota při simulaci ve °C

Zesilovač¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Zesilovač
Popis	ideální zesilovač
Schematic entry	`Amp`
Netlist entry	`X`
Typ	AnalogComponent
Bitmap file	amplifier
vlastnosti	4
Category	lumped components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
G	10	ano	Napěťové zesílení
Z1	50 Ohm	ne	referenční impedance vstupního portu
Z2	50 Ohm	ne	referenční impedance výstupního portu
NF	0 dB	ne	noise figure

Isolátor¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Isolátor
Popis	izolátor
Schematic entry	`Isolator`
Netlist entry	`X`
Typ	AnalogComponent
Bitmap file	izolátor
vlastnosti	3
Category	lumped components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Z1	50 Ohm	ne	referenční impedance vstupního portu
Z2	50 Ohm	ne	referenční impedance výstupního portu
Temp	26.85	ne	teplota při simulaci ve °C

Cirkulátor¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Cirkulátor
Popis	cirkulátor
Schematic entry	`Circulator`
Netlist entry	`X`
Typ	AnalogComponent
Bitmap file	cirkulátor
vlastnosti	3
Category	lumped components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Z1	50 Ohm	ne	referenční impedance na portu 1
Z2	50 Ohm	ne	referenční impedance na portu 2
Z3	50 Ohm	ne	referenční impedance na portu 3

Gyrátor¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Gyrátor
Popis	gyrátor (impedanční negátor)
Schematic entry	`Gyrator`
Netlist entry	`X`
Typ	AnalogComponent
Bitmap file	gyrator
vlastnosti	2
Category	lumped components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
R	50 Ohm	ano	gyrátorový poměr
Zref	50 Ohm	ne	referenční impedance

Fázový posunovač¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Fázový posunovač
Popis	fázový posunovač
Schematic entry	`PShift`
Netlist entry	`X`
Typ	AnalogComponent
Bitmap file	pshifter
vlastnosti	2
Category	lumped components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
phi	90	ano	fázové posunutí ve stupních
Zref	50 Ohm	ne	referenční impedance

Vazební člen¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Vazební člen
Popis	ideální vazební člen
Schematic entry	`Coupler`
Netlist entry	`X`
Typ	AnalogComponent
Bitmap file	coupler
vlastnosti	3
Category	lumped components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
k	0.7071	ano	vazební faktor
phi	180	ano	fázové posunutí vazebního členu ve stupních
Z	50 Ohm	ne	referenční impedance

Hybrid¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Hybrid
Popis	hybrid (unsymmetrical 3dB coupler)
Schematic entry	`Hybrid`
Netlist entry	`X`
Typ	AnalogComponent
Bitmap file	hybrid
vlastnosti	2
Category	lumped components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
phi	90	ano	fázové posunutí ve stupních
Zref	50 Ohm	ne	referenční impedance

Ampérmetr¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Ampérmetr
Popis	Ampérmetr
Schematic entry	`IProbe`
Netlist entry	`Pr`
Typ	AnalogComponent
Bitmap file	iprobe
vlastnosti	0
Category	lumped components

Voltmetr¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Voltmetr
Popis	Voltmetr
Schematic entry	`VProbe`
Netlist entry	`Pr`
Typ	AnalogComponent
Bitmap file	vprobe
vlastnosti	0
Category	lumped components

Svázané induktivity¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Svázané induktivity
Popis	3 svázané induktivity
Schematic entry	`MUT`
Netlist entry	`Tr`
Typ	AnalogComponent
Bitmap file	mutual
vlastnosti	3
Category	lumped components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
L1	1 mH	ne	induktivita cívky 1
L2	1 mH	ne	Induktivita cívky 2
k	0.9	ne	faktor svázání mezi cívkou 1 a 2

3 svázané induktivity¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	3 svázané induktivity
Popis	tři svázané induktivity
Schematic entry	`MUT2`
Netlist entry	`Tr`
Typ	AnalogComponent
Bitmap file	mutual2
vlastnosti	6
Category	lumped components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
L1	1 mH	ne	induktivita cívky 1
L2	1 mH	ne	Induktivita cívky 2
L3	1 mH	ne	Induktivita cívky 3
k12	0.9	ne	faktor svázání mezi cívkou 1 a 2
k13	0.9	ne	faktor svázání mezi cívkou 1 a 3
k23	0.9	ne	faktor svázání mezi cívkou 2 a 3

N Mutual Inductors¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	N Mutual Inductors
Popis	several mutual inductors
Schematic entry	`MUTX`
Netlist entry	`Tr`
Typ	AnalogComponent
Bitmap file	mutualx
vlastnosti	11
Category	lumped components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
coils	4	ne	number of mutual inductances
L1	1 mH	ne	induktivita cívky 1
L2	1 mH	ne	Induktivita cívky 2
L3	1 mH	ne	Induktivita cívky 3
L4	1 mH	ne	inductance of coil 4
k12	0.9	ne	coupling factor between coil 1 and coil 2
k13	0.9	ne	coupling factor between coil 1 and coil 3
k14	0.9	ne	coupling factor between coil 1 and coil 4
k23	0.9	ne	coupling factor between coil 2 and coil 3
k24	0.9	ne	coupling factor between coil 2 and coil 4
k34	0.9	ne	coupling factor between coil 3 and coil 4

Spínač¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Spínač
Popis	Spínač (časově řízený)
Schematic entry	`Switch`
Netlist entry	`S`
Typ	AnalogComponent
Bitmap file	switch
vlastnosti	6
Category	lumped components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
init	off	ne	initial state [on, off]
time	1 ms	ne	time when state changes (semicolon separated list possible, even numbered lists are repeated)
Ron	0	ne	odpor v “zapnutém” stavu v Ohmech
Roff	1e12	ne	odpor v “vypnutém” stavu v Ohmech
Temp	26.85	ne	teplota při simulaci ve °C
MaxDuration	1e-6	ne	Max possible switch transition time (transition time 1/100 smallest value in ‘time’, or this number)

Relay¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Relay
Popis	relay
Schematic entry	`Relais`
Netlist entry	`S`
Typ	AnalogComponent
Bitmap file	relais
vlastnosti	5
Category	lumped components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Vt	0.5 V	ne	mezní úroveň napětí ve voltech
Vh	0.1 V	ne	hysterezní napětí ve voltech
Ron	0	ne	Odpor v “zapnutém” stavu v Ohmech
Roff	1e12	ne	odpor ve “vypnutém” stavu v Ohmech
Temp	26.85	ne	teplota při simulaci ve °C

Equation Defined Rf Device¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Equation Defined RF Device
Popis	equation defined RF device
Schematic entry	`RFEDD`
Netlist entry	`RF`
Typ	AnalogComponent
Bitmap file	rfedd
vlastnosti	7
Category	lumped components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Typ	Y	ne	type of parameters [Y, Z, S]
Ports	2	ne	počet portů
duringDC	open	ne	representation during DC analysis [open, short, unspecified, zerofrequency]
P11	0	ne	parameter equation 11
P12	0	ne	parameter equation 12
P21	0	ne	parameter equation 21
P22	0	ne	parameter equation 22

Equation Defined 2-Port Rf Device¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Equation Defined 2-port RF Device
Popis	equation defined 2-port RF device
Schematic entry	`RFEDD2P`
Netlist entry	`RF`
Typ	AnalogComponent
Bitmap file	rfedd
vlastnosti	6
Category	lumped components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Typ	Y	ne	type of parameters [Y, Z, S, H, G, A, T]
duringDC	open	ne	representation during DC analysis [open, short, unspecified, zerofrequency]
P11	0	ne	parameter equation 11
P12	0	ne	parameter equation 12
P21	0	ne	parameter equation 21
P22	0	ne	parameter equation 22

Sources¶

Dc Voltage Source¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	zdroj DC napětí
Popis	ideální zdroj DC napětí
Schematic entry	`Vdc`
Netlist entry	`V`
Typ	AnalogComponent
Bitmap file	dc_voltage
vlastnosti	1
Category	sources

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
U	1 V	ano	Napětí ve voltech

Dc Current Source¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	zdroj DC proudu
Popis	ideální DC zdroj
Schematic entry	`Idc`
Netlist entry	`I`
Typ	AnalogComponent
Bitmap file	dc_current
vlastnosti	1
Category	sources

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
I	1 mA	ano	Proud v ampérech

Ac Voltage Source¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	zdroj AC napětí
Popis	ideální zdroj AC napětí
Schematic entry	`Vac`
Netlist entry	`V`
Typ	AnalogComponent
Bitmap file	ac_voltage
vlastnosti	4
Category	sources

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
U	1 V	ano	špičková hodnota napětí ve voltech
f	1 GHz	ne	frekvence v Hertzích
Phase	0	ne	počáteční fázové posunutí ve stupních
Theta	0	ne	tlumící faktor (pouze pro přechodovou simulaci)

Ac Current Source¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	zdroj AC proudu
Popis	ideální Zdroj AC proudu
Schematic entry	`Iac`
Netlist entry	`I`
Typ	AnalogComponent
Bitmap file	ac_current
vlastnosti	4
Category	sources

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
I	1 mA	ano	špičková hodnota proudu v ampérech
f	1 GHz	ne	frekvence v Hertzích
Phase	0	ne	počáteční fázové posunutí ve stupních
Theta	0	ne	tlumící faktor (pouze pro přechodovou simulaci)

Zdroj signálu¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Zdroj signálu
Popis	zdroj AC signálu
Schematic entry	`Pac`
Netlist entry	`P`
Typ	AnalogComponent
Bitmap file	source
vlastnosti	5
Category	sources

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Num	1	ano	číslo portu
Z	50 Ohm	ano	impedační port
P	0 dBm	ne	(available) ac power in Watts
f	1 GHz	ne	frekvence v Hertzích
Temp	26.85	ne	teplota při simulaci ve °C

zdroj rušivého napětí¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	zdroj rušivého napětí
Popis	zdroj rušivého napětí
Schematic entry	`Vnoise`
Netlist entry	`V`
Typ	AnalogComponent
Bitmap file	noise_volt
vlastnosti	4
Category	sources

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
u	1e-6	ano	spektrální napěťová hustota ve V²/Hz
e	0	ne	frekvenční exponent
c	1	ne	frekvenční koeficient
a	0	ne	dodatkový frekvenční výraz

Zdroj rušivého proudu¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Zdroj rušivého proudu
Popis	Proudový zdroj rušení
Schematic entry	`Inoise`
Netlist entry	`I`
Typ	AnalogComponent
Bitmap file	noise_current
vlastnosti	4
Category	sources

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
i	1e-6	ano	spektrální proudová hustota rušení v A²/Hz
e	0	ne	frekvenční exponent
c	1	ne	frekvenční koeficient
a	0	ne	dodatkový frekvenční výraz

napěťově řízený zdroj proudu¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	napěťově řízený zdroj proudu
Popis	napěťově řízený zdroj proudu
Schematic entry	`VCCS`
Netlist entry	`SRC`
Typ	AnalogComponent
Bitmap file	vccs
vlastnosti	2
Category	sources

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
G	1 S	ano	dopředná konduktance
T	0	ne	doba prodlevy

proudově řízený zdroj proudu¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	proudově řízený zdroj proudu
Popis	proudově řízený zdroj proudu
Schematic entry	`CCCS`
Netlist entry	`SRC`
Typ	AnalogComponent
Bitmap file	cccs
vlastnosti	2
Category	sources

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
G	1	ano	faktor dopředného přenosu
T	0	ne	doba prodlevy

napěťově řízený zdroj napětí¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	napěťově řízený zdroj napětí
Popis	napěťově řízený zdroj napětí
Schematic entry	`VCVS`
Netlist entry	`SRC`
Typ	AnalogComponent
Bitmap file	vcvs
vlastnosti	2
Category	sources

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
G	1	ano	faktor dopředného přenosu
T	0	ne	doba prodlevy

proudově řízený zdroj napětí¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	proudově řízený zdroj napětí
Popis	proudově řízený zdroj napětí
Schematic entry	`CCVS`
Netlist entry	`SRC`
Typ	AnalogComponent
Bitmap file	ccvs
vlastnosti	2
Category	sources

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
G	1 Ohm	ano	faktor dopředného přenosu
T	0	ne	doba prodlevy

Napěťový pulzní zdroj¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Napěťový pulzní zdroj
Popis	ideální napěťový zdroj
Schematic entry	`Vpulse`
Netlist entry	`V`
Typ	AnalogComponent
Bitmap file	vpulse
vlastnosti	6
Category	sources

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
U1	0 V	ano	Napětí před a po pulzu
U2	1 V	ano	Napětí během pulzu
T1	0	ano	počáteční čas pulzu
T2	1 ms	ano	konečný čas pulzu
Tr	1 ns	ne	doba nástupu pulzu
Tf	1 ns	ne	doba zánik pulzu

Pulzní proudový zdroj¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Pulzní proudový zdroj
Popis	ideální pulzní proudový zdroj
Schematic entry	`Ipulse`
Netlist entry	`I`
Typ	AnalogComponent
Bitmap file	ipulse
vlastnosti	6
Category	sources

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
I1	0	ano	proud před a po impulzu
I2	1 A	ano	proud během pulzu
T1	0	ano	počáteční čas pulzu
T2	1 ms	ano	konečný čas pulzu
Tr	1 ns	ne	doba nástupu pulzu
Tf	1 ns	ne	doba zánik pulzu

Zdroj obdélníkového napětí¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Zdroj obdélníkového napětí
Popis	ideální zdroj obdélníkového napětí
Schematic entry	`Vrect`
Netlist entry	`V`
Typ	AnalogComponent
Bitmap file	vrect
vlastnosti	6
Category	sources

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
U	1 V	ano	Napětí horní úrovně pulzu
TH	1 ms	ano	trvání horní úrovně pulzu
TL	1 ms	ano	trvání dolní úrovně pulzu
Tr	1 ns	ne	doba nástupu pulzu
Tf	1 ns	ne	doba zánik pulzu
Td	0 ns	ne	počáteční časová prodleva

Zdroj obdélníkového proudu¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Zdroj obdélníkového proudu
Popis	ideální zdroj obdélníkového proudu
Schematic entry	`Irect`
Netlist entry	`I`
Typ	AnalogComponent
Bitmap file	irect
vlastnosti	6
Category	sources

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
I	1 mA	ano	prou během pulzu
TH	1 ms	ano	trvání horní úrovně pulzu
TL	1 ms	ano	trvání dolní úrovně pulzu
Tr	1 ns	ne	doba nástupu pulzu
Tf	1 ns	ne	doba zánik pulzu
Td	0 ns	ne	počáteční časová prodleva

Korelované zdroje rušení¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Korelované zdroje rušení
Popis	korelované proudové zdroje
Schematic entry	`IInoise`
Netlist entry	`SRC`
Typ	AnalogComponent
Bitmap file	noise_ii
vlastnosti	6
Category	sources

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
i1	1e-6	ano	spektrální výkonová hustota rušení od zdroje 1
i2	1e-6	ano	spektrální výkonová hustota rušení od zdroje 2
C	0.5	ano	normovaný korelační koeficient
e	0	ne	frekvenční exponent
c	1	ne	frekvenční koeficient
a	0	ne	dodatkový frekvenční výraz

Korelované zdroje rušení¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Korelované zdroje rušení
Popis	korelované proudové zdroje
Schematic entry	`VVnoise`
Netlist entry	`SRC`
Typ	AnalogComponent
Bitmap file	noise_vv
vlastnosti	6
Category	sources

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
v1	1e-6	ano	spektrální výkonová hustota rušivého napětí od zdroje 1
v2	1e-6	ano	spektrální výkonová hustota rušivého napětí od zdroje 2
C	0.5	ano	normovaný korelační koeficient
e	0	ne	frekvenční exponent
c	1	ne	frekvenční koeficient
a	0	ne	dodatkový frekvenční výraz

Korelované zdroje rušení¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Korelované zdroje rušení
Popis	korelované proudové zdroje
Schematic entry	`IVnoise`
Netlist entry	`SRC`
Typ	AnalogComponent
Bitmap file	noise_iv
vlastnosti	6
Category	sources

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
i1	1e-6	ano	spektrální výkonová hustota rušení od zdroje 1
v2	1e-6	ano	spektrální výkonová hustota rušivého napětí od zdroje 2
C	0.5	ano	normovaný korelační koeficient
e	0	ne	frekvenční exponent
c	1	ne	frekvenční koeficient
a	0	ne	dodatkový frekvenční výraz

Am Modulated Source¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	AM modulovaný zdroj
Popis	AC zdroj napětí s amplitudovým modulátorem
Schematic entry	`AM_Mod`
Netlist entry	`V`
Typ	AnalogComponent
Bitmap file	am_mod
vlastnosti	4
Category	sources

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
U	1 V	ano	špičková hodnota napětí ve voltech
f	1 GHz	ne	frekvence v Hertzích
Phase	0	ne	počáteční fázové posunutí ve stupních
m	1.0	ne	modulační úroveň

Pm Modulated Source¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	PM modulovaný zdroj
Popis	AC zdroj napětí s fázovým modulátorem
Schematic entry	`PM_Mod`
Netlist entry	`V`
Typ	AnalogComponent
Bitmap file	pm_mod
vlastnosti	4
Category	sources

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
U	1 V	ano	špičková hodnota napětí ve voltech
f	1 GHz	ne	frekvence v Hertzích
Phase	0	ne	počáteční fázové posunutí ve stupních
M	1.0	ne	modulační index

Exponential Current Pulse¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Exponential Current Pulse
Popis	exponential current source
Schematic entry	`Iexp`
Netlist entry	`I`
Typ	AnalogComponent
Bitmap file	iexp
vlastnosti	6
Category	sources

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
I1	0	ano	current before rising edge
I2	1 A	ano	maximum current of the pulse
T1	0	ano	start time of the exponentially rising edge
T2	1 ms	ano	start of exponential decay
Tr	1 ns	ne	time constant of the rising edge
Tf	1 ns	ne	time constant of the falling edge

Exponential Voltage Pulse¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Exponential Voltage Pulse
Popis	exponential voltage source
Schematic entry	`Vexp`
Netlist entry	`V`
Typ	AnalogComponent
Bitmap file	vexp
vlastnosti	6
Category	sources

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
U1	0 V	ano	voltage before rising edge
U2	1 V	ano	maximum voltage of the pulse
T1	0	ano	start time of the exponentially rising edge
T2	1 ms	ano	start of exponential decay
Tr	1 ns	ne	rise time of the rising edge
Tf	1 ns	ne	fall time of the falling edge

File Based Voltage Source¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	File Based Voltage Source
Popis	file based voltage source
Schematic entry	`Vfile`
Netlist entry	`V`
Typ	AnalogComponent
Bitmap file	vfile
vlastnosti	5
Category	sources

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
File	vfile.dat	ano	name of the sample file
Interpolator	lineární	ne	interpolation type [hold, linear, cubic]
Repeat	ne	ne	repeat waveform [no, yes]
G	1	ne	Napěťové zesílení
T	0	ne	doba prodlevy

File Based Current Source¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	File Based Current Source
Popis	file based current source
Schematic entry	`Ifile`
Netlist entry	`I`
Typ	AnalogComponent
Bitmap file	ifile
vlastnosti	5
Category	sources

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
File	ifile.dat	ano	name of the sample file
Interpolator	lineární	ne	interpolation type [hold, linear, cubic]
Repeat	ne	ne	repeat waveform [no, yes]
G	1	ne	current gain
T	0	ne	doba prodlevy

Probes¶

Ampérmetr¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Ampérmetr
Popis	Ampérmetr
Schematic entry	`IProbe`
Netlist entry	`Pr`
Typ	AnalogComponent
Bitmap file	iprobe
vlastnosti	0
Category	probes

Voltmetr¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Voltmetr
Popis	Voltmetr
Schematic entry	`VProbe`
Netlist entry	`Pr`
Typ	AnalogComponent
Bitmap file	vprobe
vlastnosti	0
Category	probes

Transmission Lines¶

Přenosové vedení¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Přenosové vedení
Popis	ideální přenosové vedení
Schematic entry	`TLIN`
Netlist entry	`Line`
Typ	AnalogComponent
Bitmap file	tline
vlastnosti	4
Category	transmission lines

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Z	50 Ohm	ano	charakteristická impedance
L	1 mm	ano	elektrická dálka vedení
Alpha	0 dB	ne	faktor útlumu na jednotku délky v 1/m
Temp	26.85	ne	teplota při simulaci ve °C

4-Terminal Transmission Line¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	4-Terminal Transmission Line
Popis	ideal 4-terminal transmission line
Schematic entry	`TLIN4P`
Netlist entry	`Line`
Typ	AnalogComponent
Bitmap file	tline_4port
vlastnosti	4
Category	transmission lines

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Z	50 Ohm	ano	charakteristická impedance
L	1 mm	ano	elektrická dálka vedení
Alpha	0 dB	ne	faktor útlumu na jednotku délky v 1/m
Temp	26.85	ne	teplota při simulaci ve °C

Coupled Transmission Line¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Coupled Transmission Line
Popis	coupled transmission lines
Schematic entry	`CTLIN`
Netlist entry	`Line`
Typ	AnalogComponent
Bitmap file	ctline
vlastnosti	8
Category	transmission lines

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Ze	50 Ohm	ano	characteristic impedance of even mode
Zo	50 Ohm	ano	characteristic impedance of odd mode
L	1 mm	ano	elektrická dálka vedení
Ere	1	ne	relative dielectric constant of even mode
Ero	1	ne	relative dielectric constant of odd mode
Ae	0 dB	ne	attenuation factor per length of even mode
Ao	0 dB	ne	attenuation factor per length of odd mode
Temp	26.85	ne	teplota při simulaci ve °C

Twisted-Pair¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Twisted-Pair
Popis	twisted pair transmission line
Schematic entry	`TWIST`
Netlist entry	`Line`
Typ	AnalogComponent
Bitmap file	twistedpair
vlastnosti	9
Category	transmission lines

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
d	0.5 mm	ano	diameter of conductor
D	0.8 mm	ano	diameter of wire (conductor and insulator)
L	1.5	ano	physical length of the line
T	100	ne	twists per length in 1/m
er	4	ne	dielectric constant of insulator
mur	1	ne	relativní permeabilita vodiče
rho	0.022e-6	ne	specifický odpor vodiče
tand	4e-4	ne	dielektrický ztrátový úhel
Temp	26.85	ne	teplota při simulaci ve °C

Koaxiální kabel¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Koaxiální kabel
Popis	koaxiální vedení
Schematic entry	`COAX`
Netlist entry	`Line`
Typ	AnalogComponent
Bitmap file	coaxial
vlastnosti	8
Category	transmission lines

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
er	2.29	ano	relativní permitivita dielektrika
rho	0.022e-6	ne	specifický odpor vodiče
mur	1	ne	relativní permeabilita vodiče
D	2.95 mm	ne	vnitřní průměr vnějšího vodiče
d	0.9 mm	ne	průměr vnitřního vodiče
L	1500 mm	ano	mechanická délka vedení
tand	4e-4	ne	dielektrický ztrátový úhel
Temp	26.85	ne	teplota při simulaci ve °C

Obdélníkový vodič¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Obdélníkový vodič
Popis	Obdélníkový vodič
Schematic entry	`RECTLINE`
Netlist entry	`Line`
Typ	AnalogComponent
Bitmap file	rectline
vlastnosti	9
Category	transmission lines

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
a	2.95 mm	ano	widest side
b	0.9 mm	ano	shortest side
L	1500 mm	ano	mechanická délka vedení
er	1	ne	relativní permitivita dielektrika
mur	1	ne	relativní permeabilita vodiče
tand	0	ne	dielektrický ztrátový úhel
rho	0.022e-6	ne	specifický odpor vodiče
Temp	26.85	ne	teplota při simulaci ve °C
Material	unspecified	ne	material parameter for temperature model [unspecified, Copper, StainlessSteel, Gold]

Rlcg Transmission Line¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	RLCG Transmission Line
Popis	RLCG transmission line
Schematic entry	`RLCG`
Netlist entry	`Line`
Typ	AnalogComponent
Bitmap file	rlcg
vlastnosti	6
Category	transmission lines

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
R	0.0	ne	resistive load (Ohm/m)
L	0.6e-6	ano	inductive load (H/m)
C	240e-12	ano	capacitive load (F/m)
G	0.0	ne	conductive load (S/m)
Délka	1 mm	ano	elektrická dálka vedení
Temp	26.85	ne	teplota při simulaci ve °C

Substrát¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Substrát
Popis	definice substrátu
Schematic entry	`SUBST`
Netlist entry	`Subst`
Typ	AnalogComponent
Bitmap file	substrát
vlastnosti	6
Category	transmission lines

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
er	9.8	ano	relativní permitivita
h	1 mm	ano	výška v metrech
t	35 um	ano	tloušťka pokovení
tand	2e-4	ano	dielektrický ztrátový úhel
rho	0.022e-6	ano	specifický odpor kovu
D	0.15e-6	ano	efektivní povrchová drsnost

Mikropáskové vedení¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Mikropáskové vedení
Popis	mikropáskové vedení
Schematic entry	`MLIN`
Netlist entry	`MS`
Typ	AnalogComponent
Bitmap file	msline
vlastnosti	6
Category	transmission lines

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Subst	Subst1	ano	jméno definice substrátu
W	1 mm	ano	šířka vodiče
L	10 mm	ano	délka vodiče
Model	Hammerstad	ne	quasi-static microstrip model [Hammerstad, Wheeler, Schneider]
DispModel	Kirschning	ne	microstrip dispersion model [Kirschning, Kobayashi, Yamashita, Hammerstad, Getsinger, Schneider, Pramanick]
Temp	26.85	ne	teplota při simulaci ve °C

svázané mikropásková vedení¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	svázané mikropásková vedení
Popis	svázané mikropáskové vedení
Schematic entry	`MCOUPLED`
Netlist entry	`MS`
Typ	AnalogComponent
Bitmap file	mscoupled
vlastnosti	7
Category	transmission lines

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Subst	Subst1	ano	jméno definice substrátu
W	1 mm	ano	šířka vodiče
L	10 mm	ano	délka vodiče
S	1 mm	ano	odstup mezi vedeními
Model	Kirschning	ne	microstrip model [Kirschning, Hammerstad]
DispModel	Kirschning	ne	microstrip dispersion model [Kirschning, Getsinger]
Temp	26.85	ne	teplota při simulaci ve °C

Microstrip Lange Coupler¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Microstrip Lange Coupler
Popis	microstrip lange coupler
Schematic entry	`MLANGE`
Netlist entry	`MS`
Typ	AnalogComponent
Bitmap file	mslange
vlastnosti	7
Category	transmission lines

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Subst	Subst1	ano	jméno definice substrátu
W	1 mm	ano	šířka vodiče
L	10 mm	ano	délka vodiče
S	1 mm	ano	odstup mezi vedeními
Model	Kirschning	ne	microstrip model [Kirschning, Hammerstad]
DispModel	Kirschning	ne	microstrip dispersion model [Kirschning, Getsinger]
Temp	26.85	ne	teplota při simulaci ve °C

Úhel mikropásku¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Úhel mikropásku
Popis	úhel mikropásku
Schematic entry	`MCORN`
Netlist entry	`MS`
Typ	AnalogComponent
Bitmap file	mscorner
vlastnosti	2
Category	transmission lines

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Subst	Subst1	ano	substrát
W	1 mm	ano	šířka pásku

Oříznutý mikropásek¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Oříznutý mikropásek
Popis	oříznutý mikropásek
Schematic entry	`MMBEND`
Netlist entry	`MS`
Typ	AnalogComponent
Bitmap file	msmbend
vlastnosti	2
Category	transmission lines

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Subst	Subst1	ano	substrát
W	1 mm	ano	šířka pásku

Odstup mikropásku¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Odstup mikropásku
Popis	Mikropáskový impedanční krok
Schematic entry	`MSTEP`
Netlist entry	`MS`
Typ	AnalogComponent
Bitmap file	msstep
vlastnosti	5
Category	transmission lines

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Subst	Subst1	ano	substrát
W1	2 mm	ano	šířka vedení 1
W2	1 mm	ano	šířka vedení 2
MSModel	Hammerstad	ne	quasi-static microstrip model [Hammerstad, Wheeler, Schneider]
MSDispModel	Kirschning	ne	microstrip dispersion model [Kirschning, Kobayashi, Yamashita, Hammerstad, Getsinger, Schneider, Pramanick]

Mikropáskové T rozdvojení¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Mikropáskové T rozdvojení
Popis	T rozbočení mikropáskového vedení
Schematic entry	`MTEE`
Netlist entry	`MS`
Typ	AnalogComponent
Bitmap file	mstee
vlastnosti	8
Category	transmission lines

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Subst	Subst1	ano	substrát
W1	1 mm	ano	šířka vedení 1
W2	1 mm	ano	šířka vedení 2
W3	2 mm	ano	šířka vedení 3
MSModel	Hammerstad	ne	quasi-static microstrip model [Hammerstad, Wheeler, Schneider]
MSDispModel	Kirschning	ne	microstrip dispersion model [Kirschning, Kobayashi, Yamashita, Hammerstad, Getsinger, Schneider, Pramanick]
Temp	26.85	ne	teplota ve °C
Symbol	showNumbers	ne	show port numbers in symbol or not [showNumbers, noNumbers]

Mikropáskové křížení¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Mikropáskové křížení
Popis	Mikropáskové křížení
Schematic entry	`MCROSS`
Netlist entry	`MS`
Typ	AnalogComponent
Bitmap file	mscross
vlastnosti	8
Category	transmission lines

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Subst	Subst1	ano	substrát
W1	1 mm	ano	šířka vedení 1
W2	2 mm	ano	šířka vedení 2
W3	1 mm	ano	šířka vedení 3
W4	2 mm	ano	šířka vedení 4
MSModel	Hammerstad	ne	quasi-static microstrip model [Hammerstad, Wheeler, Schneider]
MSDispModel	Kirschning	ne	microstrip dispersion model [Kirschning, Kobayashi, Yamashita, Hammerstad, Getsinger, Schneider, Pramanick]
Symbol	showNumbers	ne	show port numbers in symbol or not [showNumbers, noNumbers]

Otevřené mikropáskové vedení¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Otevřené mikropáskové vedení
Popis	otevřené mikropáskové vedení
Schematic entry	`MOPEN`
Netlist entry	`MS`
Typ	AnalogComponent
Bitmap file	msopen
vlastnosti	5
Category	transmission lines

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Subst	Subst1	ano	jméno definice substrátu
W	1 mm	ano	šířka vodiče
MSModel	Hammerstad	ne	quasi-static microstrip model [Hammerstad, Wheeler, Schneider]
MSDispModel	Kirschning	ne	microstrip dispersion model [Kirschning, Kobayashi, Yamashita, Hammerstad, Getsinger, Schneider, Pramanick]
Model	Kirschning	ne	microstrip open end model [Kirschning, Hammerstad, Alexopoulos]

mikropásková mezera¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	mikropásková mezera
Popis	mikropásková mezera
Schematic entry	`MGAP`
Netlist entry	`MS`
Typ	AnalogComponent
Bitmap file	msgap
vlastnosti	6
Category	transmission lines

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Subst	Subst1	ano	jméno definice substrátu
W1	1 mm	ano	šířka vedení 1
W2	1 mm	ano	šířka vedení 2
S	1 mm	ano	Odstup mezi mikropáskovým vedením
MSModel	Hammerstad	ne	quasi-static microstrip model [Hammerstad, Wheeler, Schneider]
MSDispModel	Kirschning	ne	microstrip dispersion model [Kirschning, Kobayashi, Yamashita, Hammerstad, Getsinger, Schneider, Pramanick]

Mikropáskové prokontaktování¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Mikropáskové prokontaktování
Popis	mikropáskové prokontaktování
Schematic entry	`MVIA`
Netlist entry	`MS`
Typ	AnalogComponent
Bitmap file	msvia
vlastnosti	3
Category	transmission lines

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Subst	Subst1	ano	substrát
D	1 mm	ano	průměr kulatého prokontaktování
Temp	26.85	ne	teplota při simulaci ve °C

Microstrip Radial Stub¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Microstrip Radial Stub
Popis	microstrip radial stub
Schematic entry	`MRSTUB`
Netlist entry	`MS`
Typ	AnalogComponent
Bitmap file	msrstub
vlastnosti	4
Category	transmission lines

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Subst	Subst1	ano	jméno definice substrátu
ri	1 mm	ne	inner radius
ro	10 mm	ano	outer radius
alpha	90	ano	stub angle (degrees)

Koplanární vedení¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Koplanární vedení
Popis	koplanární vedení
Schematic entry	`CLIN`
Netlist entry	`CL`
Typ	AnalogComponent
Bitmap file	coplanar
vlastnosti	6
Category	transmission lines

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Subst	Subst1	ano	jméno definice substrátu
W	1 mm	ano	šířka vodiče
S	1 mm	ano	šířka přerušení
L	10 mm	ano	délka vodiče
Backside	Air	ne	material at the backside of the substrate [Metal, Air]
Approx	ano	ne	use approximation instead of precise equation [yes, no]

otevřené koplanární vedení¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	otevřené koplanární vedení
Popis	otevřené koplanární vedení
Schematic entry	`COPEN`
Netlist entry	`CL`
Typ	AnalogComponent
Bitmap file	cpwopen
vlastnosti	5
Category	transmission lines

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Subst	Subst1	ano	jméno definice substrátu
W	1 mm	ano	šířka vodiče
S	1 mm	ano	šířka přerušení
G	5 mm	ano	šířka mezery na konci vedení
Backside	Air	ne	material at the backside of the substrate [Metal, Air]

Zkratované koplanární vedení¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Zkratované koplanární vedení
Popis	zkratované koplanární vedení
Schematic entry	`CSHORT`
Netlist entry	`CL`
Typ	AnalogComponent
Bitmap file	cpwshort
vlastnosti	4
Category	transmission lines

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Subst	Subst1	ano	jméno definice substrátu
W	1 mm	ano	šířka vodiče
S	1 mm	ano	šířka přerušení
Backside	Air	ne	material at the backside of the substrate [Metal, Air]

koplanární mezera¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	koplanární mezera
Popis	koplanární mezera
Schematic entry	`CGAP`
Netlist entry	`CL`
Typ	AnalogComponent
Bitmap file	cpwgap
vlastnosti	4
Category	transmission lines

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Subst	Subst1	ano	jméno definice substrátu
W	1 mm	ano	šířka vodiče
S	1 mm	ano	šířka přerušení
G	0.5 mm	ano	Odstup mezi koplanárními vedeními

Koplanární odstup¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Koplanární odstup
Popis	koplanární krok
Schematic entry	`CSTEP`
Netlist entry	`CL`
Typ	AnalogComponent
Bitmap file	cpwstep
vlastnosti	5
Category	transmission lines

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Subst	Subst1	ano	jméno definice substrátu
W1	1 mm	ano	šířka vedení 1
W2	2 mm	ano	šířka vedení 2
S	3 mm	ano	odstup mezi zemnícími plochami
Backside	Air	ne	material at the backside of the substrate [Metal, Air]

Bond Wire¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Bond Wire
Popis	bond wire
Schematic entry	`BOND`
Netlist entry	`Line`
Typ	AnalogComponent
Bitmap file	bondwire
vlastnosti	8
Category	transmission lines

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
L	3 mm	ano	length of the wire
D	50 um	ano	diameter of the wire
H	2 mm	ano	height above ground plane
rho	0.022e-6	ne	specific resistance of the metal
mur	1	ne	relative permeability of the metal
Model	FREESPACE	ne	bond wire model [FREESPACE, MIRROR, DESCHARLES]
Subst	Subst1	ano	substrát
Temp	26.85	ne	teplota při simulaci ve °C

Nonlinear Components¶

Dioda¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Dioda
Popis	dioda
Schematic entry	`Diode`
Netlist entry	`D`
Typ	AnalogComponent
Bitmap file	dioda
vlastnosti	29
Category	nonlinear components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Is	1e-15 A	ano	saturační proud
N	1	ano	koeficient ideality
Cj0	10 fF	ano	kapacita v závěrném směru při 0V
M	0.5	ne	koeficient gradace
Vj	0.7 V	ne	potenciál v závěrném směru
Fc	0.5	ne	linearizační koeficient kapacity v závěrném směru
Cp	0.0 fF	ne	konstantní paralelní kapacita
Isr	0.0	ne	rekombinační proudový parametr
Nr	2.0	ne	emisní koeficient od Isr
Rs	0.0 Ohm	ne	ohmický sériový odpor
Tt	0.0 ps	ne	přechodová doba
Ikf	0	ne	high-injection knee current (0=infinity)
Kf	0.0	ne	koeficient 1/f rušení
Af	1.0	ne	exponent 1/f rušení
Ffe	1.0	ne	frekvenční exponent 1/f rušení
Bv	0	ne	závěrné průrazné napětí
Ibv	1 mA	ne	Proud při průrazu v závěrném směru
Temp	26.85	ne	teplota při simulaci ve °C
Xti	3.0	ne	teplotní exponent saturačního proudu
Eg	1.11	ne	energie valenčního odstupu
Tbv	0.0	ne	lineární teplotní koeficient od Bv
Trs	0.0	ne	lineární teplotní koeficient od Rs
Ttt1	0.0	ne	lineární teplotní koeficient od Tt
Ttt2	0.0	ne	kvadratický tepelný koeficient od Tt
Tm1	0.0	ne	lineární teplotní koeficient od M
Tm2	0.0	ne	kvadratický tepelný koeficient od M
Tnom	26.85	ne	teplota při které byly extrahovány parametry modelu
Area	1.0	ne	plošný faktor diody
Symbol	normal	ne	schematic symbol [normal, US, Schottky, Zener, Varactor]

Npn Transistor¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	npn tranzistor
Popis	bipolární tranzistor
Schematic entry	`_BJT`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	npn
vlastnosti	48
Category	nonlinear components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Typ	npn	ano	polarity [npn, pnp]
Is	1e-16	ano	saturační proud
Nf	1	ano	emisní koeficient v propustném směru
Nr	1	ne	zpětný emisní koeficient
Ikf	0	ne	zlomová hodnota proudu v propustném směru
Ikr	0	ne	zlomová hodnota pro proud v závěrném směru
Vaf	0	ano	Early napětí v propustném směru
Var	0	ne	Early napětí v závěrném směru
Ise	0	ne	neideální saturační Basis-Emitter proud
Ne	1.5	ne	emisní faktor pro neideální proud BE diody
Isc	0	ne	neideální Basis-Kolektor saturační proud
Nc	2	ne	emisní faktor pro neideální proud BC diody
Bf	100	ano	ideální proudové zesílení v propustném směru
Br	1	ne	ideální proudové zesílení v závěrném směru
Rbm	0	ne	minimální odpor báze při velkých proudech
Irb	0	ne	proud báze pro střední odpor báze
Rc	0	ne	odpor kolektoru
Re	0	ne	odpor emitoru
Rb	0	ne	konstantní odpor báze
Cje	0	ne	kapacita závěrného BE přechodu při 0V
Vje	0.75	ne	BE difůzní napětí
Mje	0.33	ne	gradační koeficient BE
Cjc	0	ne	kapacita závěrného přechodu BC při 0V
Vjc	0.75	ne	difůzní napětí BC
Mjc	0.33	ne	gradační koeficient BC
Xcjc	1.0	ne	dělící faktor BC
Cjs	0	ne	kapacita závěrného přechodu CS při 0V
Vjs	0.75	ne	difůzní napětí CS
Mjs	0	ne	gradační koeficient CS
Fc	0.5	ne	linearizační koeficient kapacity v závěrném směru
Tf	0.0	ne	ideální přechodový čas v propustném směru
Xtf	0.0	ne	koeficient proudové závislosti pro Tf
Vtf	0.0	ne	koeficient napěťové závislosti pro Tf
Itf	0.0	ne	vztažný proud proudové závislosti pro Tf
Tr	0.0	ne	ideální závěrný přechodový čas
Temp	26.85	ne	teplota při simulaci ve °C
Kf	0.0	ne	koeficient 1/f rušení
Af	1.0	ne	exponent 1/f rušení
Ffe	1.0	ne	frekvenční exponent 1/f rušení
Kb	0.0	ne	koeficient burst rušení
Ab	1.0	ne	exponent Burst rušení
Fb	1.0	ne	zlomová frekvence Burst trušení v Hertzích
Ptf	0.0	ne	dodatečná fáze ve stupních
Xtb	0.0	ne	teplotní koeficient pro dopředné a závěrné zesílení
Xti	3.0	ne	teplotní exponent saturačního proudu
Eg	1.11	ne	energie valenčního odstupu
Tnom	26.85	ne	teplota při které byly extrahovány parametry modelu
Area	1.0	ne	plošný faktor bipolárního tranzistoru

Pnp Transistor¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	pnp tranzistor
Popis	bipolární tranzistor
Schematic entry	`_BJT`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	pnp
vlastnosti	48
Category	nonlinear components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Typ	pnp	ano	polarity [npn, pnp]
Is	1e-16	ano	saturační proud
Nf	1	ano	emisní koeficient v propustném směru
Nr	1	ne	zpětný emisní koeficient
Ikf	0	ne	zlomová hodnota proudu v propustném směru
Ikr	0	ne	zlomová hodnota pro proud v závěrném směru
Vaf	0	ano	Early napětí v propustném směru
Var	0	ne	Early napětí v závěrném směru
Ise	0	ne	neideální saturační Basis-Emitter proud
Ne	1.5	ne	emisní faktor pro neideální proud BE diody
Isc	0	ne	neideální Basis-Kolektor saturační proud
Nc	2	ne	emisní faktor pro neideální proud BC diody
Bf	100	ano	ideální proudové zesílení v propustném směru
Br	1	ne	ideální proudové zesílení v závěrném směru
Rbm	0	ne	minimální odpor báze při velkých proudech
Irb	0	ne	proud báze pro střední odpor báze
Rc	0	ne	odpor kolektoru
Re	0	ne	odpor emitoru
Rb	0	ne	konstantní odpor báze
Cje	0	ne	kapacita závěrného BE přechodu při 0V
Vje	0.75	ne	BE difůzní napětí
Mje	0.33	ne	gradační koeficient BE
Cjc	0	ne	kapacita závěrného přechodu BC při 0V
Vjc	0.75	ne	difůzní napětí BC
Mjc	0.33	ne	gradační koeficient BC
Xcjc	1.0	ne	dělící faktor BC
Cjs	0	ne	kapacita závěrného přechodu CS při 0V
Vjs	0.75	ne	difůzní napětí CS
Mjs	0	ne	gradační koeficient CS
Fc	0.5	ne	linearizační koeficient kapacity v závěrném směru
Tf	0.0	ne	ideální přechodový čas v propustném směru
Xtf	0.0	ne	koeficient proudové závislosti pro Tf
Vtf	0.0	ne	koeficient napěťové závislosti pro Tf
Itf	0.0	ne	vztažný proud proudové závislosti pro Tf
Tr	0.0	ne	ideální závěrný přechodový čas
Temp	26.85	ne	teplota při simulaci ve °C
Kf	0.0	ne	koeficient 1/f rušení
Af	1.0	ne	exponent 1/f rušení
Ffe	1.0	ne	frekvenční exponent 1/f rušení
Kb	0.0	ne	koeficient burst rušení
Ab	1.0	ne	exponent Burst rušení
Fb	1.0	ne	zlomová frekvence Burst trušení v Hertzích
Ptf	0.0	ne	dodatečná fáze ve stupních
Xtb	0.0	ne	teplotní koeficient pro dopředné a závěrné zesílení
Xti	3.0	ne	teplotní exponent saturačního proudu
Eg	1.11	ne	energie valenčního odstupu
Tnom	26.85	ne	teplota při které byly extrahovány parametry modelu
Area	1.0	ne	plošný faktor bipolárního tranzistoru

Npn Transistor¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	npn tranzistor
Popis	bipolární tranzistor mit Substratanschluss
Schematic entry	`BJT`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	npnsub
vlastnosti	48
Category	nonlinear components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Typ	npn	ano	polarity [npn, pnp]
Is	1e-16	ano	saturační proud
Nf	1	ano	emisní koeficient v propustném směru
Nr	1	ne	zpětný emisní koeficient
Ikf	0	ne	zlomová hodnota proudu v propustném směru
Ikr	0	ne	zlomová hodnota pro proud v závěrném směru
Vaf	0	ano	Early napětí v propustném směru
Var	0	ne	Early napětí v závěrném směru
Ise	0	ne	neideální saturační Basis-Emitter proud
Ne	1.5	ne	emisní faktor pro neideální proud BE diody
Isc	0	ne	neideální Basis-Kolektor saturační proud
Nc	2	ne	emisní faktor pro neideální proud BC diody
Bf	100	ano	ideální proudové zesílení v propustném směru
Br	1	ne	ideální proudové zesílení v závěrném směru
Rbm	0	ne	minimální odpor báze při velkých proudech
Irb	0	ne	proud báze pro střední odpor báze
Rc	0	ne	odpor kolektoru
Re	0	ne	odpor emitoru
Rb	0	ne	konstantní odpor báze
Cje	0	ne	kapacita závěrného BE přechodu při 0V
Vje	0.75	ne	BE difůzní napětí
Mje	0.33	ne	gradační koeficient BE
Cjc	0	ne	kapacita závěrného přechodu BC při 0V
Vjc	0.75	ne	difůzní napětí BC
Mjc	0.33	ne	gradační koeficient BC
Xcjc	1.0	ne	dělící faktor BC
Cjs	0	ne	kapacita závěrného přechodu CS při 0V
Vjs	0.75	ne	difůzní napětí CS
Mjs	0	ne	gradační koeficient CS
Fc	0.5	ne	linearizační koeficient kapacity v závěrném směru
Tf	0.0	ne	ideální přechodový čas v propustném směru
Xtf	0.0	ne	koeficient proudové závislosti pro Tf
Vtf	0.0	ne	koeficient napěťové závislosti pro Tf
Itf	0.0	ne	vztažný proud proudové závislosti pro Tf
Tr	0.0	ne	ideální závěrný přechodový čas
Temp	26.85	ne	teplota při simulaci ve °C
Kf	0.0	ne	koeficient 1/f rušení
Af	1.0	ne	exponent 1/f rušení
Ffe	1.0	ne	frekvenční exponent 1/f rušení
Kb	0.0	ne	koeficient burst rušení
Ab	1.0	ne	exponent Burst rušení
Fb	1.0	ne	zlomová frekvence Burst trušení v Hertzích
Ptf	0.0	ne	dodatečná fáze ve stupních
Xtb	0.0	ne	teplotní koeficient pro dopředné a závěrné zesílení
Xti	3.0	ne	teplotní exponent saturačního proudu
Eg	1.11	ne	energie valenčního odstupu
Tnom	26.85	ne	teplota při které byly extrahovány parametry modelu
Area	1.0	ne	plošný faktor bipolárního tranzistoru

Pnp Transistor¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	pnp tranzistor
Popis	bipolární tranzistor mit Substratanschluss
Schematic entry	`BJT`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	pnpsub
vlastnosti	48
Category	nonlinear components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Typ	pnp	ano	polarity [npn, pnp]
Is	1e-16	ano	saturační proud
Nf	1	ano	emisní koeficient v propustném směru
Nr	1	ne	zpětný emisní koeficient
Ikf	0	ne	zlomová hodnota proudu v propustném směru
Ikr	0	ne	zlomová hodnota pro proud v závěrném směru
Vaf	0	ano	Early napětí v propustném směru
Var	0	ne	Early napětí v závěrném směru
Ise	0	ne	neideální saturační Basis-Emitter proud
Ne	1.5	ne	emisní faktor pro neideální proud BE diody
Isc	0	ne	neideální Basis-Kolektor saturační proud
Nc	2	ne	emisní faktor pro neideální proud BC diody
Bf	100	ano	ideální proudové zesílení v propustném směru
Br	1	ne	ideální proudové zesílení v závěrném směru
Rbm	0	ne	minimální odpor báze při velkých proudech
Irb	0	ne	proud báze pro střední odpor báze
Rc	0	ne	odpor kolektoru
Re	0	ne	odpor emitoru
Rb	0	ne	konstantní odpor báze
Cje	0	ne	kapacita závěrného BE přechodu při 0V
Vje	0.75	ne	BE difůzní napětí
Mje	0.33	ne	gradační koeficient BE
Cjc	0	ne	kapacita závěrného přechodu BC při 0V
Vjc	0.75	ne	difůzní napětí BC
Mjc	0.33	ne	gradační koeficient BC
Xcjc	1.0	ne	dělící faktor BC
Cjs	0	ne	kapacita závěrného přechodu CS při 0V
Vjs	0.75	ne	difůzní napětí CS
Mjs	0	ne	gradační koeficient CS
Fc	0.5	ne	linearizační koeficient kapacity v závěrném směru
Tf	0.0	ne	ideální přechodový čas v propustném směru
Xtf	0.0	ne	koeficient proudové závislosti pro Tf
Vtf	0.0	ne	koeficient napěťové závislosti pro Tf
Itf	0.0	ne	vztažný proud proudové závislosti pro Tf
Tr	0.0	ne	ideální závěrný přechodový čas
Temp	26.85	ne	teplota při simulaci ve °C
Kf	0.0	ne	koeficient 1/f rušení
Af	1.0	ne	exponent 1/f rušení
Ffe	1.0	ne	frekvenční exponent 1/f rušení
Kb	0.0	ne	koeficient burst rušení
Ab	1.0	ne	exponent Burst rušení
Fb	1.0	ne	zlomová frekvence Burst trušení v Hertzích
Ptf	0.0	ne	dodatečná fáze ve stupních
Xtb	0.0	ne	teplotní koeficient pro dopředné a závěrné zesílení
Xti	3.0	ne	teplotní exponent saturačního proudu
Eg	1.11	ne	energie valenčního odstupu
Tnom	26.85	ne	teplota při které byly extrahovány parametry modelu
Area	1.0	ne	plošný faktor bipolárního tranzistoru

N-Jfet¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	n-JFET
Popis	polem řízený tranzistor s pn přechody
Schematic entry	`JFET`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	nfet
vlastnosti	24
Category	nonlinear components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Typ	nfet	ano	polarity [nfet, pfet]
Vt0	-2.0 V	ano	prahové napětí
Beta	1e-4	ano	transkonduktační parametr
Lambda	0.0	ano	parameter pro modulaci délky kanálu
Rd	0.0	ne	parasitní drain odpor
Rs	0.0	ne	parasitní source odpor
Is	1e-14	ne	saturační proud Gate přechodu
N	1.0	ne	faktor ideality Gate přechodu
Isr	1e-14	ne	emisní faktor neideálního Gate proudu
Nr	2.0	ne	Emisní faktor Isr
Cgs	0.0	ne	kapacita závěrného Gate-Source přechodu při 0 voltech
Cgd	0.0	ne	kapacita závěrného Gate-Drain přechodu při 0 voltech
Pb	1.0	ne	potenciál závěrného Gate přechodu
Fc	0.5	ne	linearizační koeficient kapacity závěrného přechodu
M	0.5	ne	gradační koeficient Gate přechodu
Kf	0.0	ne	koeficient 1/f rušení
Af	1.0	ne	exponent 1/f rušení
Ffe	1.0	ne	frekvenční exponent 1/f rušení
Temp	26.85	ne	teplota při simulaci ve °C
Xti	3.0	ne	teplotní exponent saturačního proudu
Vt0tc	0.0	ne	teplotní koefizient od Vt0
Betatce	0.0	ne	exponentielní teplotní koeficient od Beta
Tnom	26.85	ne	teplota při které byly extrahovány parametry modelu
Area	1.0	ne	plošný faktor JFETu

P-Jfet¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	p-JFET
Popis	polem řízený tranzistor s pn přechody
Schematic entry	`JFET`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	pfet
vlastnosti	24
Category	nonlinear components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Typ	pfet	ano	polarity [nfet, pfet]
Vt0	-2.0 V	ano	prahové napětí
Beta	1e-4	ano	transkonduktační parametr
Lambda	0.0	ano	parameter pro modulaci délky kanálu
Rd	0.0	ne	parasitní drain odpor
Rs	0.0	ne	parasitní source odpor
Is	1e-14	ne	saturační proud Gate přechodu
N	1.0	ne	faktor ideality Gate přechodu
Isr	1e-14	ne	emisní faktor neideálního Gate proudu
Nr	2.0	ne	Emisní faktor Isr
Cgs	0.0	ne	kapacita závěrného Gate-Source přechodu při 0 voltech
Cgd	0.0	ne	kapacita závěrného Gate-Drain přechodu při 0 voltech
Pb	1.0	ne	potenciál závěrného Gate přechodu
Fc	0.5	ne	linearizační koeficient kapacity závěrného přechodu
M	0.5	ne	gradační koeficient Gate přechodu
Kf	0.0	ne	koeficient 1/f rušení
Af	1.0	ne	exponent 1/f rušení
Ffe	1.0	ne	frekvenční exponent 1/f rušení
Temp	26.85	ne	teplota při simulaci ve °C
Xti	3.0	ne	teplotní exponent saturačního proudu
Vt0tc	0.0	ne	teplotní koefizient od Vt0
Betatce	0.0	ne	exponentielní teplotní koeficient od Beta
Tnom	26.85	ne	teplota při které byly extrahovány parametry modelu
Area	1.0	ne	plošný faktor JFETu

N-Mosfet¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	n-MOSFET
Popis	MOS polem řízený tranzistor
Schematic entry	`_MOSFET`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	nmosfet
vlastnosti	44
Category	nonlinear components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Typ	nfet	ne	polarity [nfet, pfet]
Vt0	1.0 V	ano	nulové prahové napětí
Kp	2e-5	ano	transkonduktační parametr v A/V²
Gamma	0.0	ne	prahové napětí substrátu v sqrt(V)
Phi	0.6 V	ne	povrchový potenciál
Lambda	0.0	ano	parametr modulace délky kanálu v 1/V
Rd	0.0 Ohm	ne	ohmický odpor drain přechodu
Rs	0.0 Ohm	ne	ohmický odpor source přechodu
Rg	0.0 Ohm	ne	ohmický odpor metalického kontaktu Gate
Is	1e-14 A	ne	saturační proud substrátu v závěrném směru
N	1.0	ne	emisní faktor substrátového přechodu
W	1 um	ne	šířka kanálu
L	1 um	ne	délka kanálu
Ld	0.0	ne	difuzní délka překryvu Gate
Tox	0.1 um	ne	tloušťka oxidové vrtsvy
Cgso	0.0	ne	gate-source (overlap-)kapacita na šířku kanálu ve F/m
Cgdo	0.0	ne	gate-drain (overlap-)kapacita na šířku kanálu v F/m
Cgbo	0.0	ne	gate-bulk (overlap-)kapacita na délku kanálu v F/m
Cbd	0.0 F	ne	zero-bias bulk-drain junction capacitance
Cbs	0.0 F	ne	zero-bias bulk-source junction capacitance
Pb	0.8 V	ne	difůzní napětí závěrného přechodu substrátu
Mj	0.5	ne	gradační koeficient závěrného přechodu substrátu
Fc	0.5	ne	koeficient kapacity závěrného přechodu pro propustný směr
Cjsw	0.0	ne	zero-bias bulk junction periphery capacitance per meter of junction perimeter in F/m
Mjsw	0.33	ne	gradační koeficient bočních stěn substrátu v závěrném směru
Tt	0.0 ps	ne	tranzitní doba pro substrát
Nsub	0.0	ne	dotační hustota substrátu v 1/cm³
Nss	0.0	ne	koeficient povrchové hustoty náboje v 1/cm²
Tpg	1	ne	Typ gate materiálu: 0 = hliník; -1 = stejný jako substrát; 1 = opak substrátu
Uo	600.0	ne	povrchová pohyblivost v cm²/Vs
Rsh	0.0	ne	difůzní plošný odpor drain a source v Ohm/Quadrat
Nrd	1	ne	plošný faktor drain
Nrs	1	ne	plošný faktor source
Cj	0.0	ne	zero-bias bulk junction bottom capacitance per square meter of junction area in F/m^2
Js	0.0	ne	saturační proudová hustota substrátu v závěrném směru v A/m²
Ad	0.0	ne	difůzní plocha drain v m²
As	0.0	ne	difůzní plocha source v m²
Pd	0.0 m	ne	obvod závěrného přechodu drain
Ps	0.0 m	ne	obvod závěrného přechodu source
Kf	0.0	ne	koeficient 1/f rušení
Af	1.0	ne	exponent 1/f rušení
Ffe	1.0	ne	frekvenční exponent 1/f rušení
Temp	26.85	ne	teplota při simulaci ve °C
Tnom	26.85	ne	teplota při měření parametrů modelu

P-Mosfet¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	p-MOSFET
Popis	MOS polem řízený tranzistor
Schematic entry	`_MOSFET`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	pmosfet
vlastnosti	44
Category	nonlinear components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Typ	pfet	ne	polarity [nfet, pfet]
Vt0	-1.0 V	ano	nulové prahové napětí
Kp	2e-5	ano	transkonduktační parametr v A/V²
Gamma	0.0	ne	prahové napětí substrátu v sqrt(V)
Phi	0.6 V	ne	povrchový potenciál
Lambda	0.0	ano	parametr modulace délky kanálu v 1/V
Rd	0.0 Ohm	ne	ohmický odpor drain přechodu
Rs	0.0 Ohm	ne	ohmický odpor source přechodu
Rg	0.0 Ohm	ne	ohmický odpor metalického kontaktu Gate
Is	1e-14 A	ne	saturační proud substrátu v závěrném směru
N	1.0	ne	emisní faktor substrátového přechodu
W	1 um	ne	šířka kanálu
L	1 um	ne	délka kanálu
Ld	0.0	ne	difuzní délka překryvu Gate
Tox	0.1 um	ne	tloušťka oxidové vrtsvy
Cgso	0.0	ne	gate-source (overlap-)kapacita na šířku kanálu ve F/m
Cgdo	0.0	ne	gate-drain (overlap-)kapacita na šířku kanálu v F/m
Cgbo	0.0	ne	gate-bulk (overlap-)kapacita na délku kanálu v F/m
Cbd	0.0 F	ne	zero-bias bulk-drain junction capacitance
Cbs	0.0 F	ne	zero-bias bulk-source junction capacitance
Pb	0.8 V	ne	difůzní napětí závěrného přechodu substrátu
Mj	0.5	ne	gradační koeficient závěrného přechodu substrátu
Fc	0.5	ne	koeficient kapacity závěrného přechodu pro propustný směr
Cjsw	0.0	ne	zero-bias bulk junction periphery capacitance per meter of junction perimeter in F/m
Mjsw	0.33	ne	gradační koeficient bočních stěn substrátu v závěrném směru
Tt	0.0 ps	ne	tranzitní doba pro substrát
Nsub	0.0	ne	dotační hustota substrátu v 1/cm³
Nss	0.0	ne	koeficient povrchové hustoty náboje v 1/cm²
Tpg	1	ne	Typ gate materiálu: 0 = hliník; -1 = stejný jako substrát; 1 = opak substrátu
Uo	600.0	ne	povrchová pohyblivost v cm²/Vs
Rsh	0.0	ne	difůzní plošný odpor drain a source v Ohm/Quadrat
Nrd	1	ne	plošný faktor drain
Nrs	1	ne	plošný faktor source
Cj	0.0	ne	zero-bias bulk junction bottom capacitance per square meter of junction area in F/m^2
Js	0.0	ne	saturační proudová hustota substrátu v závěrném směru v A/m²
Ad	0.0	ne	difůzní plocha drain v m²
As	0.0	ne	difůzní plocha source v m²
Pd	0.0 m	ne	obvod závěrného přechodu drain
Ps	0.0 m	ne	obvod závěrného přechodu source
Kf	0.0	ne	koeficient 1/f rušení
Af	1.0	ne	exponent 1/f rušení
Ffe	1.0	ne	frekvenční exponent 1/f rušení
Temp	26.85	ne	teplota při simulaci ve °C
Tnom	26.85	ne	teplota při měření parametrů modelu

Depletion Mosfet¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	MOSFET (depletion)
Popis	MOS polem řízený tranzistor
Schematic entry	`_MOSFET`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	dmosfet
vlastnosti	44
Category	nonlinear components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Typ	nfet	ne	polarity [nfet, pfet]
Vt0	-1.0 V	ano	nulové prahové napětí
Kp	2e-5	ano	transkonduktační parametr v A/V²
Gamma	0.0	ne	prahové napětí substrátu v sqrt(V)
Phi	0.6 V	ne	povrchový potenciál
Lambda	0.0	ano	parametr modulace délky kanálu v 1/V
Rd	0.0 Ohm	ne	ohmický odpor drain přechodu
Rs	0.0 Ohm	ne	ohmický odpor source přechodu
Rg	0.0 Ohm	ne	ohmický odpor metalického kontaktu Gate
Is	1e-14 A	ne	saturační proud substrátu v závěrném směru
N	1.0	ne	emisní faktor substrátového přechodu
W	1 um	ne	šířka kanálu
L	1 um	ne	délka kanálu
Ld	0.0	ne	difuzní délka překryvu Gate
Tox	0.1 um	ne	tloušťka oxidové vrtsvy
Cgso	0.0	ne	gate-source (overlap-)kapacita na šířku kanálu ve F/m
Cgdo	0.0	ne	gate-drain (overlap-)kapacita na šířku kanálu v F/m
Cgbo	0.0	ne	gate-bulk (overlap-)kapacita na délku kanálu v F/m
Cbd	0.0 F	ne	zero-bias bulk-drain junction capacitance
Cbs	0.0 F	ne	zero-bias bulk-source junction capacitance
Pb	0.8 V	ne	difůzní napětí závěrného přechodu substrátu
Mj	0.5	ne	gradační koeficient závěrného přechodu substrátu
Fc	0.5	ne	koeficient kapacity závěrného přechodu pro propustný směr
Cjsw	0.0	ne	zero-bias bulk junction periphery capacitance per meter of junction perimeter in F/m
Mjsw	0.33	ne	gradační koeficient bočních stěn substrátu v závěrném směru
Tt	0.0 ps	ne	tranzitní doba pro substrát
Nsub	0.0	ne	dotační hustota substrátu v 1/cm³
Nss	0.0	ne	koeficient povrchové hustoty náboje v 1/cm²
Tpg	1	ne	Typ gate materiálu: 0 = hliník; -1 = stejný jako substrát; 1 = opak substrátu
Uo	600.0	ne	povrchová pohyblivost v cm²/Vs
Rsh	0.0	ne	difůzní plošný odpor drain a source v Ohm/Quadrat
Nrd	1	ne	plošný faktor drain
Nrs	1	ne	plošný faktor source
Cj	0.0	ne	zero-bias bulk junction bottom capacitance per square meter of junction area in F/m^2
Js	0.0	ne	saturační proudová hustota substrátu v závěrném směru v A/m²
Ad	0.0	ne	difůzní plocha drain v m²
As	0.0	ne	difůzní plocha source v m²
Pd	0.0 m	ne	obvod závěrného přechodu drain
Ps	0.0 m	ne	obvod závěrného přechodu source
Kf	0.0	ne	koeficient 1/f rušení
Af	1.0	ne	exponent 1/f rušení
Ffe	1.0	ne	frekvenční exponent 1/f rušení
Temp	26.85	ne	teplota při simulaci ve °C
Tnom	26.85	ne	teplota při měření parametrů modelu

N-Mosfet¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	n-MOSFET
Popis	MOS field-effect transistor with substrate
Schematic entry	`MOSFET`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	nmosfet_sub
vlastnosti	44
Category	nonlinear components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Typ	nfet	ne	polarity [nfet, pfet]
Vt0	1.0 V	ano	nulové prahové napětí
Kp	2e-5	ano	transkonduktační parametr v A/V²
Gamma	0.0	ne	prahové napětí substrátu v sqrt(V)
Phi	0.6 V	ne	povrchový potenciál
Lambda	0.0	ano	parametr modulace délky kanálu v 1/V
Rd	0.0 Ohm	ne	ohmický odpor drain přechodu
Rs	0.0 Ohm	ne	ohmický odpor source přechodu
Rg	0.0 Ohm	ne	ohmický odpor metalického kontaktu Gate
Is	1e-14 A	ne	saturační proud substrátu v závěrném směru
N	1.0	ne	emisní faktor substrátového přechodu
W	1 um	ne	šířka kanálu
L	1 um	ne	délka kanálu
Ld	0.0	ne	difuzní délka překryvu Gate
Tox	0.1 um	ne	tloušťka oxidové vrtsvy
Cgso	0.0	ne	gate-source (overlap-)kapacita na šířku kanálu ve F/m
Cgdo	0.0	ne	gate-drain (overlap-)kapacita na šířku kanálu v F/m
Cgbo	0.0	ne	gate-bulk (overlap-)kapacita na délku kanálu v F/m
Cbd	0.0 F	ne	zero-bias bulk-drain junction capacitance
Cbs	0.0 F	ne	zero-bias bulk-source junction capacitance
Pb	0.8 V	ne	difůzní napětí závěrného přechodu substrátu
Mj	0.5	ne	gradační koeficient závěrného přechodu substrátu
Fc	0.5	ne	koeficient kapacity závěrného přechodu pro propustný směr
Cjsw	0.0	ne	zero-bias bulk junction periphery capacitance per meter of junction perimeter in F/m
Mjsw	0.33	ne	gradační koeficient bočních stěn substrátu v závěrném směru
Tt	0.0 ps	ne	tranzitní doba pro substrát
Nsub	0.0	ne	dotační hustota substrátu v 1/cm³
Nss	0.0	ne	koeficient povrchové hustoty náboje v 1/cm²
Tpg	1	ne	Typ gate materiálu: 0 = hliník; -1 = stejný jako substrát; 1 = opak substrátu
Uo	600.0	ne	povrchová pohyblivost v cm²/Vs
Rsh	0.0	ne	difůzní plošný odpor drain a source v Ohm/Quadrat
Nrd	1	ne	plošný faktor drain
Nrs	1	ne	plošný faktor source
Cj	0.0	ne	zero-bias bulk junction bottom capacitance per square meter of junction area in F/m^2
Js	0.0	ne	saturační proudová hustota substrátu v závěrném směru v A/m²
Ad	0.0	ne	difůzní plocha drain v m²
As	0.0	ne	difůzní plocha source v m²
Pd	0.0 m	ne	obvod závěrného přechodu drain
Ps	0.0 m	ne	obvod závěrného přechodu source
Kf	0.0	ne	koeficient 1/f rušení
Af	1.0	ne	exponent 1/f rušení
Ffe	1.0	ne	frekvenční exponent 1/f rušení
Temp	26.85	ne	teplota při simulaci ve °C
Tnom	26.85	ne	teplota při měření parametrů modelu

P-Mosfet¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	p-MOSFET
Popis	MOS field-effect transistor with substrate
Schematic entry	`MOSFET`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	pmosfet_sub
vlastnosti	44
Category	nonlinear components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Typ	pfet	ne	polarity [nfet, pfet]
Vt0	-1.0 V	ano	nulové prahové napětí
Kp	2e-5	ano	transkonduktační parametr v A/V²
Gamma	0.0	ne	prahové napětí substrátu v sqrt(V)
Phi	0.6 V	ne	povrchový potenciál
Lambda	0.0	ano	parametr modulace délky kanálu v 1/V
Rd	0.0 Ohm	ne	ohmický odpor drain přechodu
Rs	0.0 Ohm	ne	ohmický odpor source přechodu
Rg	0.0 Ohm	ne	ohmický odpor metalického kontaktu Gate
Is	1e-14 A	ne	saturační proud substrátu v závěrném směru
N	1.0	ne	emisní faktor substrátového přechodu
W	1 um	ne	šířka kanálu
L	1 um	ne	délka kanálu
Ld	0.0	ne	difuzní délka překryvu Gate
Tox	0.1 um	ne	tloušťka oxidové vrtsvy
Cgso	0.0	ne	gate-source (overlap-)kapacita na šířku kanálu ve F/m
Cgdo	0.0	ne	gate-drain (overlap-)kapacita na šířku kanálu v F/m
Cgbo	0.0	ne	gate-bulk (overlap-)kapacita na délku kanálu v F/m
Cbd	0.0 F	ne	zero-bias bulk-drain junction capacitance
Cbs	0.0 F	ne	zero-bias bulk-source junction capacitance
Pb	0.8 V	ne	difůzní napětí závěrného přechodu substrátu
Mj	0.5	ne	gradační koeficient závěrného přechodu substrátu
Fc	0.5	ne	koeficient kapacity závěrného přechodu pro propustný směr
Cjsw	0.0	ne	zero-bias bulk junction periphery capacitance per meter of junction perimeter in F/m
Mjsw	0.33	ne	gradační koeficient bočních stěn substrátu v závěrném směru
Tt	0.0 ps	ne	tranzitní doba pro substrát
Nsub	0.0	ne	dotační hustota substrátu v 1/cm³
Nss	0.0	ne	koeficient povrchové hustoty náboje v 1/cm²
Tpg	1	ne	Typ gate materiálu: 0 = hliník; -1 = stejný jako substrát; 1 = opak substrátu
Uo	600.0	ne	povrchová pohyblivost v cm²/Vs
Rsh	0.0	ne	difůzní plošný odpor drain a source v Ohm/Quadrat
Nrd	1	ne	plošný faktor drain
Nrs	1	ne	plošný faktor source
Cj	0.0	ne	zero-bias bulk junction bottom capacitance per square meter of junction area in F/m^2
Js	0.0	ne	saturační proudová hustota substrátu v závěrném směru v A/m²
Ad	0.0	ne	difůzní plocha drain v m²
As	0.0	ne	difůzní plocha source v m²
Pd	0.0 m	ne	obvod závěrného přechodu drain
Ps	0.0 m	ne	obvod závěrného přechodu source
Kf	0.0	ne	koeficient 1/f rušení
Af	1.0	ne	exponent 1/f rušení
Ffe	1.0	ne	frekvenční exponent 1/f rušení
Temp	26.85	ne	teplota při simulaci ve °C
Tnom	26.85	ne	teplota při měření parametrů modelu

Depletion Mosfet¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	MOSFET (depletion)
Popis	MOS field-effect transistor with substrate
Schematic entry	`MOSFET`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	dmosfet_sub
vlastnosti	44
Category	nonlinear components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Typ	nfet	ne	polarity [nfet, pfet]
Vt0	-1.0 V	ano	nulové prahové napětí
Kp	2e-5	ano	transkonduktační parametr v A/V²
Gamma	0.0	ne	prahové napětí substrátu v sqrt(V)
Phi	0.6 V	ne	povrchový potenciál
Lambda	0.0	ano	parametr modulace délky kanálu v 1/V
Rd	0.0 Ohm	ne	ohmický odpor drain přechodu
Rs	0.0 Ohm	ne	ohmický odpor source přechodu
Rg	0.0 Ohm	ne	ohmický odpor metalického kontaktu Gate
Is	1e-14 A	ne	saturační proud substrátu v závěrném směru
N	1.0	ne	emisní faktor substrátového přechodu
W	1 um	ne	šířka kanálu
L	1 um	ne	délka kanálu
Ld	0.0	ne	difuzní délka překryvu Gate
Tox	0.1 um	ne	tloušťka oxidové vrtsvy
Cgso	0.0	ne	gate-source (overlap-)kapacita na šířku kanálu ve F/m
Cgdo	0.0	ne	gate-drain (overlap-)kapacita na šířku kanálu v F/m
Cgbo	0.0	ne	gate-bulk (overlap-)kapacita na délku kanálu v F/m
Cbd	0.0 F	ne	zero-bias bulk-drain junction capacitance
Cbs	0.0 F	ne	zero-bias bulk-source junction capacitance
Pb	0.8 V	ne	difůzní napětí závěrného přechodu substrátu
Mj	0.5	ne	gradační koeficient závěrného přechodu substrátu
Fc	0.5	ne	koeficient kapacity závěrného přechodu pro propustný směr
Cjsw	0.0	ne	zero-bias bulk junction periphery capacitance per meter of junction perimeter in F/m
Mjsw	0.33	ne	gradační koeficient bočních stěn substrátu v závěrném směru
Tt	0.0 ps	ne	tranzitní doba pro substrát
Nsub	0.0	ne	dotační hustota substrátu v 1/cm³
Nss	0.0	ne	koeficient povrchové hustoty náboje v 1/cm²
Tpg	1	ne	Typ gate materiálu: 0 = hliník; -1 = stejný jako substrát; 1 = opak substrátu
Uo	600.0	ne	povrchová pohyblivost v cm²/Vs
Rsh	0.0	ne	difůzní plošný odpor drain a source v Ohm/Quadrat
Nrd	1	ne	plošný faktor drain
Nrs	1	ne	plošný faktor source
Cj	0.0	ne	zero-bias bulk junction bottom capacitance per square meter of junction area in F/m^2
Js	0.0	ne	saturační proudová hustota substrátu v závěrném směru v A/m²
Ad	0.0	ne	difůzní plocha drain v m²
As	0.0	ne	difůzní plocha source v m²
Pd	0.0 m	ne	obvod závěrného přechodu drain
Ps	0.0 m	ne	obvod závěrného přechodu source
Kf	0.0	ne	koeficient 1/f rušení
Af	1.0	ne	exponent 1/f rušení
Ffe	1.0	ne	frekvenční exponent 1/f rušení
Temp	26.85	ne	teplota při simulaci ve °C
Tnom	26.85	ne	teplota při měření parametrů modelu

Opamp¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	OpAmp
Popis	Operační zesilovač
Schematic entry	`OpAmp`
Netlist entry	`OP`
Typ	AnalogComponent
Bitmap file	opamp
vlastnosti	2
Category	nonlinear components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
G	1e6	ano	Napěťové zesílení
Umax	15 V	ne	absolutní hodnota maximálního a minimálního výstupního napětí

Equation Defined Device¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Equation Defined Device
Popis	equation defined device
Schematic entry	`EDD`
Netlist entry	`D`
Typ	AnalogComponent
Bitmap file	edd
vlastnosti	4
Category	nonlinear components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Typ	explicit	ne	type of equations [explicit, implicit]
Branches	1	ne	number of branches
I1	0	ano	current equation 1
Q1	0	ne	charge equation 1

Diac¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Diac
Popis	diac (bidirectional trigger diode)
Schematic entry	`Diac`
Netlist entry	`D`
Typ	AnalogComponent
Bitmap file	diac
vlastnosti	7
Category	nonlinear components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Vbo	30 V	ano	(bidirectional) breakover voltage
Ibo	50 uA	ne	(bidirectional) breakover current
Cj0	10 pF	ne	parasitic capacitance
Is	1e-10 A	ne	saturační proud
N	2	ne	koeficient ideality
Ri	10 Ohm	ne	intrinsic junction resistance
Temp	26.85	ne	simulation temperature

Triac¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Triac
Popis	triac (bidirectional thyristor)
Schematic entry	`Triac`
Netlist entry	`D`
Typ	AnalogComponent
Bitmap file	triac
vlastnosti	8
Category	nonlinear components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Vbo	400 V	ne	(bidirectional) breakover voltage
Igt	50 uA	ano	(bidirectional) gate trigger current
Cj0	10 pF	ne	parasitic capacitance
Is	1e-10 A	ne	saturační proud
N	2	ne	koeficient ideality
Ri	10 Ohm	ne	intrinsic junction resistance
Rg	5 Ohm	ne	gate resistance
Temp	26.85	ne	simulation temperature

Thyristor¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Thyristor
Popis	silicon controlled rectifier (SCR)
Schematic entry	`SCR`
Netlist entry	`D`
Typ	AnalogComponent
Bitmap file	thyristor
vlastnosti	8
Category	nonlinear components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Vbo	400 V	ne	breakover voltage
Igt	50 uA	ano	gate trigger current
Cj0	10 pF	ne	parasitic capacitance
Is	1e-10 A	ne	saturační proud
N	2	ne	koeficient ideality
Ri	10 Ohm	ne	intrinsic junction resistance
Rg	5 Ohm	ne	gate resistance
Temp	26.85	ne	simulation temperature

Tunnel Diode¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Tunnel Diode
Popis	resonance tunnel diode
Schematic entry	`RTD`
Netlist entry	`D`
Typ	AnalogComponent
Bitmap file	tunneldiode
vlastnosti	16
Category	nonlinear components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Ip	4 mA	ano	peak current
Iv	0.6 mA	ano	valley current
Vv	0.8 V	ano	valley voltage
Wr	2.7e-20	ne	resonance energy in Ws
eta	1e-20	ne	Fermi energy in Ws
dW	4.5e-21	ne	resonance width in Ws
Tmax	0.95	ne	maximum of transmission
de	0.9	ne	fitting factor for electron density
dv	2.0	ne	fitting factor for voltage drop
nv	16	ne	fitting factor for diode current
Cj0	80 fF	ne	zero-bias depletion capacitance
M	0.5	ne	koeficient gradace
Vj	0.5 V	ne	potenciál v závěrném směru
te	0.6 ps	ne	life-time of electrons
Temp	26.85	ne	teplota při simulaci ve °C
Area	1.0	ne	plošný faktor diody

Verilog-A Devices¶

Hicum L2 V2.1¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	HICUM L2 v2.1
Popis	HICUM Level 2 v2.1 verilog device
Schematic entry	`hicumL2V2p1`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	npnsub_therm
vlastnosti	101
Category	verilog-a devices

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
c10	1.516E-31	ne	GICCR constant
qp0	5.939E-15	ne	Zero-bias hole charge
ich	1.0E11	ne	Korekce vysokého proudu pro 2D a 3D efekty
hfe	1.0	ne	Emitter minority charge weighting factor in HBTs
hfc	0.03999	ne	Collector minority charge weighting factor in HBTs
hjei	0.435	ne	B-E depletion charge weighting factor in HBTs
hjci	0.09477	ne	B-C depletion charge weighting factor in HBTs
ibeis	3.47E-20	ne	Internal B-E saturation current
mbei	1.025	ne	Internal B-E current ideality factor
ireis	390E-12	ne	Internal B-E recombination saturation current
mrei	3	ne	Internal B-E recombination current ideality factor
ibeps	4.18321E-21	ne	Peripheral B-E saturation current
mbep	1.045	ne	Peripheral B-E current ideality factor
ireps	1.02846E-14	ne	Peripheral B-E recombination saturation current
mrep	3	ne	Peripheral B-E recombination current ideality factor
mcf	1.0	ne	Non-ideality factor for III-V HBTs
ibcis	3.02613E-18	ne	Internal B-C saturation current
mbci	1.0	ne	Internal B-C current ideality factor
ibcxs	4.576E-29	ne	External B-C saturation current
mbcx	1.0	ne	External B-C current ideality factor
ibets	0.0	ne	B-E tunneling saturation current
abet	36.74	ne	Exponent factor for tunneling current
favl	14.97	ne	Avalanche current factor
qavl	7.2407E-14	ne	Exponent factor for avalanche current
alfav	0.0	ne	Relative TC for FAVL
alqav	0.0	ne	Relative TC for QAVL
rbi0	7.9	ne	Zero bias internal base resistance
rbx	13.15	ne	External base series resistance
fgeo	0.724	ne	Factor for geometry dependence of emitter current crowding
fdqr0	0	ne	Correction factor for modulation by B-E and B-C space charge layer
fcrbi	0.0	ne	Ratio of HF shunt to total internal capacitance (lateral NQS effect)
fqi	1.0	ne	Ration of internal to total minority charge
re	9.77	ne	Emitter series resistance
rcx	10	ne	External collector series resistance
itss	2.81242E-19	ne	Substrate transistor transfer saturation current
msf	1.0	ne	Forward ideality factor of substrate transfer current
iscs	7.6376E-17	ne	C-S diode saturation current
msc	1.0	ne	Ideality factor of C-S diode current
tsf	1.733E-8	ne	Transit time for forward operation of substrate transistor
rsu	800	ne	Substrate series resistance
csu	1.778E-14	ne	Substrate shunt capacitance
cjei0	5.24382E-14	ne	Internal B-E zero-bias depletion capacitance
vdei	0.9956	ne	Internal B-E built-in potential
zei	0.4	ne	Internal B-E grading coefficient
aljei	2.5	ne	Ratio of maximum to zero-bias value of internal B-E capacitance
cjep0	0	ne	Peripheral B-E zero-bias depletion capacitance
vdep	1	ne	Peripheral B-E built-in potential
zep	0.01	ne	Peripheral B-E grading coefficient
aljep	2.5	ne	Ratio of maximum to zero-bias value of peripheral B-E capacitance
cjci0	4.46887E-15	ne	Internal B-C zero-bias depletion capacitance
vdci	0.7	ne	Internal B-C built-in potential
zci	0.38	ne	Internal B-C grading coefficient
vptci	100	ne	Internal B-C punch-through voltage
cjcx0	1.55709E-14	ne	External B-C zero-bias depletion capacitance
vdcx	0.733	ne	External B-C built-in potential
zcx	0.34	ne	External B-C grading coefficient
vptcx	100	ne	External B-C punch-through voltage
fbc	0.3487	ne	Partitioning factor of parasitic B-C capacitance
cjs0	17.68E-15	ne	C-S zero-bias depletion capacitance
vds	0.621625	ne	C-S built-in potential
zs	0.122136	ne	C-S grading coefficient
vpts	1000	ne	C-S punch-through voltage
t0	1.28E-12	ne	Low current forward transit time at VBC=0V
dt0h	260E-15	ne	Time constant for base and B-C space charge layer width modulation
tbvl	2.0E-13	ne	Time constant for modelling carrier jam at low VCE
tef0	0.0	ne	Neutral emitter storage time
gtfe	1.0	ne	Exponent factor for current dependence of neutral emitter storage time
thcs	46E-15	ne	Saturation time constant at high current densities
alhc	0.08913	ne	Smoothing factor for current dependence of base and collector transit time
fthc	0.8778	ne	Partitioning factor for base and collector portion
rci0	50.4277	ne	Internal collector resistance at low electric field
vlim	0.9	ne	Voltage separating ohmic and saturation velocity regime
vces	0.01	ne	Internal C-E saturation voltage
vpt	10	ne	Collector punch-through voltage
tr	1.0E-11	ne	Storage time for inverse operation
ceox	1.71992E-15	ne	Total parasitic B-E capacitance
ccox	4.9E-15	ne	Total parasitic B-C capacitance
alqf	0.1288	ne	Factor for additional delay time of minority charge
alit	1.0	ne	Factor for additional delay time of transfer current
kf	2.83667E-9	ne	Flicker noise coefficient
af	2.0	ne	Flicker noise exponent factor
krbi	1.0	ne	Noise factor for internal base resistance
latb	10.479	ne	Scaling factor for collector minority charge in direction of emitter width
latl	0.300012	ne	Scaling factor for collector minority charge in direction of emitter length
vgb	1.112	ne	Bandgap voltage extrapolated to 0 K
alt0	0.0017580	ne	First order relative TC of parameter T0
kt0	4.07E-6	ne	Second order relative TC of parameter T0
zetaci	0.7	ne	Temperature exponent for RCI0
zetacx	1.0	ne	Temperature exponent of mobility in substrate transistor transit time
alvs	0.001	ne	Relative TC of saturation drift velocity
alces	0.000125	ne	Relative TC of VCES
zetarbi	0.0	ne	Temperature exponent of internal base resistance
zetarbx	0.2	ne	Temperature exponent of external base resistance
zetarcx	0.21	ne	Temperature exponent of external collector resistance
zetare	0.7	ne	Temperature exponent of emitter resistance
alb	0.007	ne	Relative TC of forward current gain for V2.1 model
rth	1293.95	ne	Thermal resistance
cth	7.22203E-11	ne	Thermal capacitance
tnom	27.0	ne	Temperature at which parameters are specified
dt	0.0	ne	Temperature change w.r.t. chip temperature for particular transistor
Temp	27	ne	simulation temperature

Fbh Hbt¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	FBH HBT
Popis	HBT model by Ferdinand-Braun-Institut (FBH), Berlin
Schematic entry	`HBT_X`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	npn_therm
vlastnosti	80
Category	verilog-a devices

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Mode	1	ne	Ignored
Noise	1	ne	Ignored
Debug	0	ne	Ignored
DebugPlus	0	ne	Ignored
Temp	25.0	ne	Device operating temperature, Celsius
Rth	0.1	ne	Thermal resistance, K/W
Cth	700e-9	ne	Thermal capacitance
N	1	ne	Scaling factor, number of emitter fingers
L	30e-6	ne	Length of emitter finger, m
W	1e-6	ne	Width of emitter finger, m
Jsf	20e-24	ne	Forward saturation current density, A/um^2
nf	1.0	ne	Forward current emission coefficient
Vg	1.3	ne	Forward thermal activation energy, V, (0 == disables temperature dependence)
Jse	0.0	ne	B-E leakage saturation current density, A/um^2
ne	0.0	ne	B-E leakage emission coefficient
Rbxx	1e6	ne	Limiting resistor of B-E leakage diode, Ohm
Vgb	0.0	ne	B-E leakage thermal activation energy, V, (0 == disables temperature dependence)
Jsee	0.0	ne	2nd B-E leakage saturation current density, A/um^2
nee	0.0	ne	2nd B-E leakage emission coefficient
Rbbxx	1e6	ne	2nd Limiting resistor of B-E leakage diode, Ohm
Vgbb	0.0	ne	2nd B-E leakage thermal activation energy, V, (0 == disables temperature dependence)
Jsr	20e-18	ne	Reverse saturation current density, A/um^2
nr	1.0	ne	Reverse current emission coefficient
Vgr	0.0	ne	Reverse thermal activation energy, V, (0 == disables temperature dependence)
XCjc	0.5	ne	Fraction of Cjc that goes to internal base node
Jsc	0.0	ne	B-C leakage saturation current density, A/um^2 (0. switches off diode)
nc	0.0	ne	B-C leakage emission coefficient (0. switches off diode)
Rcxx	1e6	ne	Limiting resistor of B-C leakage diode, Ohm
Vgc	0.0	ne	B-C leakage thermal activation energy, V, (0 == disables temperature dependence)
Bf	100.0	ne	Ideal forward beta
kBeta	0.0	ne	Temperature coefficient of forward current gain, -1/K, (0 == disables temperature dependence)
Br	1.0	ne	Ideal reverse beta
VAF	0.0	ne	Forward Early voltage, V, (0 == disables Early Effect)
VAR	0.0	ne	Reverse Early voltage, V, (0 == disables Early Effect)
IKF	0.0	ne	Forward high-injection knee current, A, (0 == disables Webster Effect)
IKR	0.0	ne	Reverse high-injection knee current, A, (0 == disables Webster Effect)
Mc	0.0	ne	C-E breakdown exponent, (0 == disables collector break-down)
BVceo	0.0	ne	C-E breakdown voltage, V, (0 == disables collector break-down)
kc	0.0	ne	C-E breakdown factor, (0 == disables collector break-down)
BVebo	0.0	ne	B-E breakdown voltage, V, (0 == disables emitter break-down)
Tr	1.0e-15	ne	Ideal reverse transit time, s
Trx	1.0e-15	ne	Extrinsic BC diffusion capacitance, F
Tf	1.0e-12	ne	Ideal forward transit time, s
Tft	0.0	ne	Temperature coefficient of forward transit time
Thcs	0.0	ne	Excess transit time coefficient at base push-out
Ahc	0.0	ne	Smoothing parameter for Thcs
Cje	1.0e-15	ne	B-E zero-bias depletion capacitance, F/um^2
mje	0.5	ne	B-E junction exponential factor
Vje	1.3	ne	B-E junction built-in potential, V
Cjc	1.0e-15	ne	B-C zero-bias depletion capacitance, F/um^2
mjc	0.5	ne	B-C junction exponential factor
Vjc	1.3	ne	B-C junction built-in potential, V
kjc	1.0	ne	not used
Cmin	0.1e-15	ne	Minimum B-C depletion capacitance (Vbc dependence), F/um^2
J0	1e-3	ne	Collector current where Cbc reaches Cmin, A/um^2 (0 == disables Cbc reduction)
XJ0	1.0	ne	Fraction of Cmin, lower limit of BC capacitance (Ic dependence)
Rci0	1e-3	ne	Onset of base push-out at low voltages, Ohm*um^2 (0 == disables base push-out)
Jk	4e-4	ne	Onset of base push-out at high voltages, A/um^2, (0 == disables base push-out)
RJk	1e-3	ne	Slope of Jk at high currents , Ohm*um^2
Vces	1e-3	ne	Voltage shift of base push-out onset, V
Rc	1.0	ne	Collector resistance, Ohm/finger
Re	1.0	ne	Emitter resistance, Ohm/finger
Rb	1.0	ne	Extrinsic base resistance, Ohm/finger
Rb2	1.0	ne	Inner Base ohmic resistance, Ohm/finger
Lc	0.0	ne	Collector inductance, H
Le	0.0	ne	Emitter inductance, H
Lb	0.0	ne	Base inductance, H
Cq	0.0	ne	Extrinsic B-C capacitance, F
Cpb	0.0	ne	Extrinsic base capacitance, F
Cpc	0.0	ne	Extrinsic collector capacitance, F
Kfb	0.0	ne	Flicker-noise coefficient
Afb	0.0	ne	Flicker-noise exponent
Ffeb	0.0	ne	Flicker-noise frequency exponent
Kb	0.0	ne	Burst noise coefficient
Ab	0.0	ne	Burst noise exponent
Fb	0.0	ne	Burst noise corner frequency, Hz
Kfe	0.0	ne	Flicker-noise coefficient
Afe	0.0	ne	Flicker-noise exponent
Ffee	0.0	ne	Flicker-noise frequency exponent
Tnom	20.0	ne	Ambient temperature at which the parameters were determined

Modular Opamp¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Modular OpAmp
Popis	Modular Operational Amplifier verilog device
Schematic entry	`mod_amp`
Netlist entry	`OP`
Typ	AnalogComponent
Bitmap file	mod_amp
vlastnosti	17
Category	verilog-a devices

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
GBP	1e6	ne	Gain bandwidth product (Hz)
AOLDC	106.0	ne	Open-loop differential gain at DC (dB)
FP2	3e6	ne	Second pole frequency (Hz)
RO	75	ne	Output resistance (Ohm)
CD	1e-12	ne	Differential input capacitance (F)
RD	2e6	ne	Differential input resistance (Ohm)
IOFF	20e-9	ne	Input offset current (A)
IB	80e-9	ne	Input bias current (A)
VOFF	7e-4	ne	Input offset voltage (V)
CMRRDC	90.0	ne	Common-mode rejection ratio at DC (dB)
FCM	200.0	ne	Common-mode zero corner frequency (Hz)
PSRT	5e5	ne	Positive slew rate (V/s)
NSRT	5e5	ne	Negative slew rate (V/s)
VLIMP	14	ne	Positive output voltage limit (V)
VLIMN	-14	ne	Negative output voltage limit (V)
ILMAX	35e-3	ne	Maximum DC output current (A)
CSCALE	50	ne	Current limit scale factor

Hicum L2 V2.22¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	HICUM L2 v2.22
Popis	HICUM Level 2 v2.22 verilog device
Schematic entry	`hic2_full`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	npnsub_therm
vlastnosti	114
Category	verilog-a devices

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
c10	2.0E-30	ne	GICCR constant (A^2s)
qp0	2.0E-14	ne	Zero-bias hole charge (Coul)
ich	0.0	ne	High-current correction for 2D and 3D effects (A)
hfe	1.0	ne	Emitter minority charge weighting factor in HBTs
hfc	1.0	ne	Collector minority charge weighting factor in HBTs
hjei	1.0	ne	B-E depletion charge weighting factor in HBTs
hjci	1.0	ne	B-C depletion charge weighting factor in HBTs
ibeis	1.0E-18	ne	Internal B-E saturation current (A)
mbei	1.0	ne	Internal B-E current ideality factor
ireis	0.0	ne	Internal B-E recombination saturation current (A)
mrei	2.0	ne	Internal B-E recombination current ideality factor
ibeps	0.0	ne	Peripheral B-E saturation current (A)
mbep	1.0	ne	Peripheral B-E current ideality factor
ireps	0.0	ne	Peripheral B-E recombination saturation current (A)
mrep	2.0	ne	Peripheral B-E recombination current ideality factor
mcf	1.0	ne	Non-ideality factor for III-V HBTs
tbhrec	0.0	ne	Base current recombination time constant at B-C barrier for high forward injection (s)
ibcis	1.0E-16	ne	Internal B-C saturation current (A)
mbci	1.0	ne	Internal B-C current ideality factor
ibcxs	0.0	ne	External B-C saturation current (A)
mbcx	1.0	ne	External B-C current ideality factor
ibets	0.0	ne	B-E tunneling saturation current (A)
abet	40	ne	Exponent factor for tunneling current
tunode	1	ne	Specifies the base node connection for the tunneling current
favl	0.0	ne	Avalanche current factor (1/V)
qavl	0.0	ne	Exponent factor for avalanche current (Coul)
alfav	0.0	ne	Relative TC for FAVL (1/K)
alqav	0.0	ne	Relative TC for QAVL (1/K)
rbi0	0.0	ne	Zero bias internal base resistance (Ohm)
rbx	0.0	ne	External base series resistance (Ohm)
fgeo	0.6557	ne	Factor for geometry dependence of emitter current crowding
fdqr0	0.0	ne	Correction factor for modulation by B-E and B-C space charge layer
fcrbi	0.0	ne	Ratio of HF shunt to total internal capacitance (lateral NQS effect)
fqi	1.0	ne	Ration of internal to total minority charge
re	0.0	ne	Emitter series resistance (Ohm)
rcx	0.0	ne	External collector series resistance (Ohm)
itss	0.0	ne	Substrate transistor transfer saturation current (A)
msf	1.0	ne	Forward ideality factor of substrate transfer current
iscs	0.0	ne	C-S diode saturation current (A)
msc	1.0	ne	Ideality factor of C-S diode current
tsf	0.0	ne	Transit time for forward operation of substrate transistor (s)
rsu	0.0	ne	Substrate series resistance (Ohm)
csu	0.0	ne	Substrate shunt capacitance (F)
cjei0	1.0E-20	ne	Internal B-E zero-bias depletion capacitance (F)
vdei	0.9	ne	Internal B-E built-in potential (V)
zei	0.5	ne	Internal B-E grading coefficient
ajei	2.5	ne	Ratio of maximum to zero-bias value of internal B-E capacitance
cjep0	1.0E-20	ne	Peripheral B-E zero-bias depletion capacitance (F)
vdep	0.9	ne	Peripheral B-E built-in potential (V)
zep	0.5	ne	Peripheral B-E grading coefficient
ajep	2.5	ne	Ratio of maximum to zero-bias value of peripheral B-E capacitance
cjci0	1.0E-20	ne	Internal B-C zero-bias depletion capacitance (F)
vdci	0.7	ne	Internal B-C built-in potential (V)
zci	0.4	ne	Internal B-C grading coefficient
vptci	100	ne	Internal B-C punch-through voltage (V)
cjcx0	1.0E-20	ne	External B-C zero-bias depletion capacitance (F)
vdcx	0.7	ne	External B-C built-in potential (V)
zcx	0.4	ne	External B-C grading coefficient
vptcx	100	ne	External B-C punch-through voltage (V)
fbcpar	0.0	ne	Partitioning factor of parasitic B-C cap
fbepar	1.0	ne	Partitioning factor of parasitic B-E cap
cjs0	0.0	ne	C-S zero-bias depletion capacitance (F)
vds	0.6	ne	C-S built-in potential (V)
zs	0.5	ne	C-S grading coefficient
vpts	100	ne	C-S punch-through voltage (V)
t0	0.0	ne	Low current forward transit time at VBC=0V (s)
dt0h	0.0	ne	Time constant for base and B-C space charge layer width modulation (s)
tbvl	0.0	ne	Time constant for modelling carrier jam at low VCE (s)
tef0	0.0	ne	Neutral emitter storage time (s)
gtfe	1.0	ne	Exponent factor for current dependence of neutral emitter storage time
thcs	0.0	ne	Saturation time constant at high current densities (s)
ahc	0.1	ne	Smoothing factor for current dependence of base and collector transit time
fthc	0.0	ne	Partitioning factor for base and collector portion
rci0	150	ne	Internal collector resistance at low electric field (Ohm)
vlim	0.5	ne	Voltage separating ohmic and saturation velocity regime (V)
vces	0.1	ne	Internal C-E saturation voltage (V)
vpt	0.0	ne	Collector punch-through voltage (V)
tr	0.0	ne	Storage time for inverse operation (s)
cbepar	0.0	ne	Total parasitic B-E capacitance (F)
cbcpar	0.0	ne	Total parasitic B-C capacitance (F)
alqf	0.0	ne	Factor for additional delay time of minority charge
alit	0.0	ne	Factor for additional delay time of transfer current
flnqs	0	ne	Flag for turning on and off of vertical NQS effect
kf	0.0	ne	Flicker noise coefficient
af	2.0	ne	Flicker noise exponent factor
cfbe	-1	ne	Flag for determining where to tag the flicker noise source
latb	0.0	ne	Scaling factor for collector minority charge in direction of emitter width
latl	0.0	ne	Scaling factor for collector minority charge in direction of emitter length
vgb	1.17	ne	Bandgap voltage extrapolated to 0 K (V)
alt0	0.0	ne	First order relative TC of parameter T0 (1/K)
kt0	0.0	ne	Second order relative TC of parameter T0
zetaci	0.0	ne	Temperature exponent for RCI0
alvs	0.0	ne	Relative TC of saturation drift velocity (1/K)
alces	0.0	ne	Relative TC of VCES (1/K)
zetarbi	0.0	ne	Temperature exponent of internal base resistance
zetarbx	0.0	ne	Temperature exponent of external base resistance
zetarcx	0.0	ne	Temperature exponent of external collector resistance
zetare	0.0	ne	Temperature exponent of emitter resistance
zetacx	1.0	ne	Temperature exponent of mobility in substrate transistor transit time
vge	1.17	ne	Effective emitter bandgap voltage (V)
vgc	1.17	ne	Effective collector bandgap voltage (V)
vgs	1.17	ne	Effective substrate bandgap voltage (V)
f1vg	-1.02377e-4	ne	Coefficient K1 in T-dependent band-gap equation
f2vg	4.3215e-4	ne	Coefficient K2 in T-dependent band-gap equation
zetact	3.0	ne	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	ne	Exponent coefficient in B-E junction current temperature dependence
alb	0.0	ne	Relative TC of forward current gain for V2.1 model (1/K)
flsh	0	ne	Flag for turning on and off self-heating effect
rth	0.0	ne	Thermal resistance (K/W)
cth	0.0	ne	Thermal capacitance (J/W)
flcomp	0.0	ne	Flag for compatibility with v2.1 model (0=v2.1)
tnom	27.0	ne	Temperature at which parameters are specified (C)
dt	0.0	ne	Temperature change w.r.t. chip temperature for particular transistor (K)
Temp	27	ne	simulation temperature

Logarithmic Amplifier¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Logarithmic Amplifier
Popis	Logarithmic Amplifier verilog device
Schematic entry	`log_amp`
Netlist entry	`LA`
Typ	AnalogComponent
Bitmap file	log_amp
vlastnosti	17
Category	verilog-a devices

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Kv	1.0	ne	scale factor
Dk	0.3	ne	scale factor error (%)
Ib1	5e-12	ne	input I1 bias current (A)
Ibr	5e-12	ne	input reference bias current (A)
M	5	ne	number of decades
N	0.1	ne	conformity error (%)
Vosout	3e-3	ne	output offset error (V)
Rinp	1e6	ne	amplifier input resistance (Ohm)
Fc	1e3	ne	amplifier 3dB frequency (Hz)
Ro	1e-3	ne	amplifier output resistance (Ohm)
Ntc	0.002	ne	conformity error temperature coefficient (%/Celsius)
Vosouttc	80e-6	ne	offset temperature coefficient (V/Celsius)
Dktc	0.03	ne	scale factor error temperature coefficient (%/Celsius)
Ib1tc	0.5e-12	ne	input I1 bias current temperature coefficient (A/Celsius)
Ibrtc	0.5e-12	ne	input reference bias current temperature coefficient (A/Celsius)
Tnom	26.85	ne	parameter measurement temperature (Celsius)
Temp	26.85	ne	simulation temperature

Npn Hicum L0 V1.12¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	npn HICUM L0 v1.12
Popis	HICUM Level 0 v1.12 verilog device
Schematic entry	`hic0_full`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	npnsub_therm
vlastnosti	86
Category	verilog-a devices

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Typ	npn	ano	polarity [npn, pnp]
is	1.0e-16	ne	(Modified) saturation current (A)
mcf	1.00	ne	Non-ideality coefficient of forward collector current
mcr	1.00	ne	Non-ideality coefficient of reverse collector current
vef	1.0e6	ne	forward Early voltage (normalization volt.) (V)
iqf	1.0e6	ne	forward d.c. high-injection roll-off current (A)
iqr	1.0e6	ne	inverse d.c. high-injection roll-off current (A)
iqfh	1.0e6	ne	high-injection correction current (A)
tfh	1.0e6	ne	high-injection correction factor
ibes	1e-18	ne	BE saturation current (A)
mbe	1.0	ne	BE non-ideality factor
ires	0.0	ne	BE recombination saturation current (A)
mre	2.0	ne	BE recombination non-ideality factor
ibcs	0.0	ne	BC saturation current (A)
mbc	1.0	ne	BC non-ideality factor
cje0	1.0e-20	ne	Zero-bias BE depletion capacitance (F)
vde	0.9	ne	BE built-in voltage (V)
ze	0.5	ne	BE exponent factor
aje	2.5	ne	Ratio of maximum to zero-bias value
t0	0.0	ne	low current transit time at Vbici=0 (s)
dt0h	0.0	ne	Base width modulation contribution (s)
tbvl	0.0	ne	SCR width modulation contribution (s)
tef0	0.0	ne	Storage time in neutral emitter (s)
gte	1.0	ne	Exponent factor for emitter transit time
thcs	0.0	ne	Saturation time at high current densities (s)
ahc	0.1	ne	Smoothing factor for current dependence
tr	0.0	ne	Storage time at inverse operation (s)
rci0	150	ne	Low-field collector resistance under emitter (Ohm)
vlim	0.5	ne	Voltage dividing ohmic and satur.region (V)
vpt	100	ne	Punch-through voltage (V)
vces	0.1	ne	Saturation voltage (V)
cjci0	1.0e-20	ne	Total zero-bias BC depletion capacitance (F)
vdci	0.7	ne	BC built-in voltage (V)
zci	0.333	ne	BC exponent factor
vptci	100	ne	Punch-through voltage of BC junction (V)
cjcx0	1.0e-20	ne	Zero-bias external BC depletion capacitance (F)
vdcx	0.7	ne	External BC built-in voltage (V)
zcx	0.333	ne	External BC exponent factor
vptcx	100	ne	Punch-through voltage (V)
fbc	1.0	ne	Split factor = Cjci0/Cjc0
rbi0	0.0	ne	Internal base resistance at zero-bias (Ohm)
vr0e	2.5	ne	forward Early voltage (normalization volt.) (V)
vr0c	1.0e6	ne	forward Early voltage (normalization volt.) (V)
fgeo	0.656	ne	Geometry factor
rbx	0.0	ne	External base series resistance (Ohm)
rcx	0.0	ne	Emitter series resistance (Ohm)
re	0.0	ne	External collector series resistance (Ohm)
itss	0.0	ne	Substrate transistor transfer saturation current (A)
msf	1.0	ne	Substrate transistor transfer current non-ideality factor
iscs	0.0	ne	SC saturation current (A)
msc	1.0	ne	SC non-ideality factor
cjs0	1.0e-20	ne	Zero-bias SC depletion capacitance (F)
vds	0.3	ne	SC built-in voltage (V)
zs	0.3	ne	External SC exponent factor
vpts	100	ne	SC punch-through voltage (V)
cbcpar	0.0	ne	Collector-base isolation (overlap) capacitance (F)
cbepar	0.0	ne	Emitter-base oxide capacitance (F)
eavl	0.0	ne	Exponent factor
kavl	0.0	ne	Prefactor
kf	0.0	ne	flicker noise coefficient (M^(1-AF))
af	2.0	ne	flicker noise exponent factor
vgb	1.2	ne	Bandgap-voltage (V)
vge	1.17	ne	Effective emitter bandgap-voltage (V)
vgc	1.17	ne	Effective collector bandgap-voltage (V)
vgs	1.17	ne	Effective substrate bandgap-voltage (V)
f1vg	-1.02377e-4	ne	Coefficient K1 in T-dependent bandgap equation (V/K)
f2vg	4.3215e-4	ne	Coefficient K2 in T-dependent bandgap equation (V/K)
alt0	0.0	ne	Frist-order TC of tf0 (1/K)
kt0	0.0	ne	Second-order TC of tf0 (1/K^2)
zetact	3.0	ne	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	ne	Exponent coefficient in BE junction current temperature dependence
zetaci	0.0	ne	TC of epi-collector diffusivity
alvs	0.0	ne	Relative TC of satur.drift velocity (1/K)
alces	0.0	ne	Relative TC of vces (1/K)
zetarbi	0.0	ne	TC of internal base resistance
zetarbx	0.0	ne	TC of external base resistance
zetarcx	0.0	ne	TC of external collector resistance
zetare	0.0	ne	TC of emitter resistances
alkav	0.0	ne	TC of avalanche prefactor (1/K)
aleav	0.0	ne	TC of avalanche exponential factor (1/K)
flsh	0	ne	Flag for self-heating calculation
rth	0.0	ne	Thermal resistance (K/W)
cth	0.0	ne	Thermal capacitance (Ws/K)
tnom	27	ne	Temperature for which parameters are valid (C)
dt	0.0	ne	Temperature change for particular transistor (K)
Temp	26.85	ne	simulation temperature

Pnp Hicum L0 V1.12¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	pnp HICUM L0 v1.12
Popis	HICUM Level 0 v1.12 verilog device
Schematic entry	`hic0_full`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	pnpsub_therm
vlastnosti	86
Category	verilog-a devices

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Typ	pnp	ano	polarity [npn, pnp]
is	1.0e-16	ne	(Modified) saturation current (A)
mcf	1.00	ne	Non-ideality coefficient of forward collector current
mcr	1.00	ne	Non-ideality coefficient of reverse collector current
vef	1.0e6	ne	forward Early voltage (normalization volt.) (V)
iqf	1.0e6	ne	forward d.c. high-injection roll-off current (A)
iqr	1.0e6	ne	inverse d.c. high-injection roll-off current (A)
iqfh	1.0e6	ne	high-injection correction current (A)
tfh	1.0e6	ne	high-injection correction factor
ibes	1e-18	ne	BE saturation current (A)
mbe	1.0	ne	BE non-ideality factor
ires	0.0	ne	BE recombination saturation current (A)
mre	2.0	ne	BE recombination non-ideality factor
ibcs	0.0	ne	BC saturation current (A)
mbc	1.0	ne	BC non-ideality factor
cje0	1.0e-20	ne	Zero-bias BE depletion capacitance (F)
vde	0.9	ne	BE built-in voltage (V)
ze	0.5	ne	BE exponent factor
aje	2.5	ne	Ratio of maximum to zero-bias value
t0	0.0	ne	low current transit time at Vbici=0 (s)
dt0h	0.0	ne	Base width modulation contribution (s)
tbvl	0.0	ne	SCR width modulation contribution (s)
tef0	0.0	ne	Storage time in neutral emitter (s)
gte	1.0	ne	Exponent factor for emitter transit time
thcs	0.0	ne	Saturation time at high current densities (s)
ahc	0.1	ne	Smoothing factor for current dependence
tr	0.0	ne	Storage time at inverse operation (s)
rci0	150	ne	Low-field collector resistance under emitter (Ohm)
vlim	0.5	ne	Voltage dividing ohmic and satur.region (V)
vpt	100	ne	Punch-through voltage (V)
vces	0.1	ne	Saturation voltage (V)
cjci0	1.0e-20	ne	Total zero-bias BC depletion capacitance (F)
vdci	0.7	ne	BC built-in voltage (V)
zci	0.333	ne	BC exponent factor
vptci	100	ne	Punch-through voltage of BC junction (V)
cjcx0	1.0e-20	ne	Zero-bias external BC depletion capacitance (F)
vdcx	0.7	ne	External BC built-in voltage (V)
zcx	0.333	ne	External BC exponent factor
vptcx	100	ne	Punch-through voltage (V)
fbc	1.0	ne	Split factor = Cjci0/Cjc0
rbi0	0.0	ne	Internal base resistance at zero-bias (Ohm)
vr0e	2.5	ne	forward Early voltage (normalization volt.) (V)
vr0c	1.0e6	ne	forward Early voltage (normalization volt.) (V)
fgeo	0.656	ne	Geometry factor
rbx	0.0	ne	External base series resistance (Ohm)
rcx	0.0	ne	Emitter series resistance (Ohm)
re	0.0	ne	External collector series resistance (Ohm)
itss	0.0	ne	Substrate transistor transfer saturation current (A)
msf	1.0	ne	Substrate transistor transfer current non-ideality factor
iscs	0.0	ne	SC saturation current (A)
msc	1.0	ne	SC non-ideality factor
cjs0	1.0e-20	ne	Zero-bias SC depletion capacitance (F)
vds	0.3	ne	SC built-in voltage (V)
zs	0.3	ne	External SC exponent factor
vpts	100	ne	SC punch-through voltage (V)
cbcpar	0.0	ne	Collector-base isolation (overlap) capacitance (F)
cbepar	0.0	ne	Emitter-base oxide capacitance (F)
eavl	0.0	ne	Exponent factor
kavl	0.0	ne	Prefactor
kf	0.0	ne	flicker noise coefficient (M^(1-AF))
af	2.0	ne	flicker noise exponent factor
vgb	1.2	ne	Bandgap-voltage (V)
vge	1.17	ne	Effective emitter bandgap-voltage (V)
vgc	1.17	ne	Effective collector bandgap-voltage (V)
vgs	1.17	ne	Effective substrate bandgap-voltage (V)
f1vg	-1.02377e-4	ne	Coefficient K1 in T-dependent bandgap equation (V/K)
f2vg	4.3215e-4	ne	Coefficient K2 in T-dependent bandgap equation (V/K)
alt0	0.0	ne	Frist-order TC of tf0 (1/K)
kt0	0.0	ne	Second-order TC of tf0 (1/K^2)
zetact	3.0	ne	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	ne	Exponent coefficient in BE junction current temperature dependence
zetaci	0.0	ne	TC of epi-collector diffusivity
alvs	0.0	ne	Relative TC of satur.drift velocity (1/K)
alces	0.0	ne	Relative TC of vces (1/K)
zetarbi	0.0	ne	TC of internal base resistance
zetarbx	0.0	ne	TC of external base resistance
zetarcx	0.0	ne	TC of external collector resistance
zetare	0.0	ne	TC of emitter resistances
alkav	0.0	ne	TC of avalanche prefactor (1/K)
aleav	0.0	ne	TC of avalanche exponential factor (1/K)
flsh	0	ne	Flag for self-heating calculation
rth	0.0	ne	Thermal resistance (K/W)
cth	0.0	ne	Thermal capacitance (Ws/K)
tnom	27	ne	Temperature for which parameters are valid (C)
dt	0.0	ne	Temperature change for particular transistor (K)
Temp	26.85	ne	simulation temperature

Potentiometer¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Potentiometer
Popis	Potentiometer verilog device
Schematic entry	`potentiometer`
Netlist entry	`POT`
Typ	AnalogComponent
Bitmap file	potentiometer
vlastnosti	11
Category	verilog-a devices

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
R_pot	1e4	ne	nominal device resistance (Ohm)
Rotation	120	ne	shaft/wiper arm rotation (degrees)
Taper_Coeff	0	ne	resistive law taper coefficient
LEVEL	1	ne	device type selector [1, 2, 3]
Max_Rotation	240.0	ne	maximum shaft/wiper rotation (degrees)
Conformity	0.2	ne	conformity error (%)
Linearity	0.2	ne	linearity error (%)
Contact_Res	1	ne	wiper arm contact resistance (Ohm)
Temp_Coeff	100	ne	resistance temperature coefficient (PPM/Celsius)
Tnom	26.85	ne	parameter measurement temperature (Celsius)
Temp	26.85	ne	simulation temperature

Mesfet¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	MESFET
Popis	MESFET verilog device
Schematic entry	`MESFET`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	MESFET
vlastnosti	52
Category	verilog-a devices

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
LEVEL	1	ne	model selector
Vto	-1.8	ne	pinch-off voltage (V)
Beta	3e-3	ne	transconductance parameter (A/(V*V))
Alpha	2.25	ne	saturation voltage parameter (1/V)
Lambda	0.05	ne	channel length modulation parameter (1/V)
B	0.3	ne	doping profile parameter (1/V)
Qp	2.1	ne	power law exponent parameter
Delta	0.1	ne	power feedback parameter (1/W)
Vmax	0.5	ne	maximum junction voltage limit before capacitance limiting (V)
Vdelta1	0.3	ne	capacitance saturation transition voltage (V)
Vdelta2	0.2	ne	capacitance threshold transition voltage (V)
Gamma	0.015	ne	dc drain pull coefficient
Nsc	1	ne	subthreshold conductance parameter
Is	1e-14	ne	diode saturation current (I)
N	1	ne	diode emission coefficient
Vbi	1.0	ne	built-in gate potential (V)
Bv	60	ne	gate-drain junction reverse bias breakdown voltage (V)
Xti	3.0	ne	diode saturation current temperature coefficient
Fc	0.5	ne	linearizační koeficient kapacity v závěrném směru
Tau	1e-9	ne	transit time under gate (s)
Rin	1e-3	ne	channel resistance (Ohm)
Area	1	ne	area factor
Eg	1.11	ne	energy gap (eV)
M	0.5	ne	koeficient gradace
Cgd	0.2e-12	ne	zero bias gate-drain junction capacitance (F)
Cgs	1e-12	ne	zero bias gate-source junction capacitance (F)
Cds	1e-12	ne	zero bias drain-source junction capacitance (F)
Betatc	0	ne	Beta temperature coefficient (%/Celsius)
Alphatc	0	ne	Alpha temperature coefficient (%/Celsius)
Gammatc	0	ne	Gamma temperature coefficient (%/Celsius)
Ng	2.65	ne	Subthreshold slope gate parameter
Nd	-0.19	ne	subthreshold drain pull parameter
ILEVELS	3	ne	gate-source current equation selector
ILEVELD	3	ne	gate-drain current equation selector
QLEVELS	2	ne	gate-source charge equation selector
QLEVELD	2	ne	gate-drain charge equation selector
QLEVELDS	2	ne	drain-source charge equation selector
Vtotc	0	ne	Vto temperature coefficient
Rg	5.1	ne	gate resistance (Ohms)
Rd	1.3	ne	drain resistance (Ohms)
Rs	1.3	ne	source resistance (Ohms)
Rgtc	0	ne	gate resistance temperature coefficient (1/Celsius)
Rdtc	0	ne	drain resistance temperature coefficient (1/Celsius)
Rstc	0	ne	source resistance temperature coefficient (1/Celsius)
Ibv	1e-3	ne	gate reverse breakdown currrent (A)
Rf	10	ne	forward bias slope resistance (Ohms)
R1	10	ne	breakdown slope resistance (Ohms)
Af	1	ne	exponent 1/f rušení
Kf	0	ne	koeficient 1/f rušení
Gdsnoi	1	ne	shot noise coefficient
Tnom	26.85	ne	parameter measurement temperature (Celsius)
Temp	26.85	ne	simulation temperature

Epfl-Ekv Nmos 2.6¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	EPFL-EKV NMOS 2.6
Popis	EPFL-EKV MOS 2.6 verilog device
Schematic entry	`EKV26MOS`
Netlist entry	`M`
Typ	AnalogComponent
Bitmap file	EKV26nMOS
vlastnosti	55
Category	verilog-a devices

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Typ	nmos	ano	polarity [nmos, pmos]
LEVEL	1	ne	long = 1, short = 2
L	0.5e-6	ne	length parameter (m)
W	10e-6	ne	Width parameter (m)
Np	1.0	ne	parallel multiple device number
Ns	1.0	ne	series multiple device number
Cox	3.45e-3	ne	gate oxide capacitance per unit area (F/m**2)
Xj	0.15e-6	ne	metallurgical junction depth (m)
Dw	-0.02e-6	ne	channel width correction (m)
Dl	-0.05e-6	ne	channel length correction (m)
Vto	0.6	ne	long channel threshold voltage (V)
Gamma	0.71	ne	body effect parameter (V**(1/2))
Phi	0.97	ne	bulk Fermi potential (V)
Kp	150e-6	ne	transconductance parameter (A/V**2)
Theta	50e-3	ne	mobility reduction coefficient (1/V)
EO	88.0e6	ne	mobility coefficient (V/m)
Ucrit	4.5e6	ne	longitudinal critical field (V/m)
Lambda	0.23	ne	depletion length coefficient
Weta	0.05	ne	narrow-channel effect coefficient
Leta	0.28	ne	longitudinal critical field
Q0	280e-6	ne	reverse short channel charge density (As/m*2)
Lk	0.5e-6	ne	characteristic length (m)
Tcv	1.5e-3	ne	threshold voltage temperature coefficient (V/K)
Bex	-1.5	ne	mobility temperature coefficient
Ucex	1.7	ne	Longitudinal critical field temperature exponent
Ibbt	0.0	ne	Ibb temperature coefficient (1/K)
Hdif	0.9e-6	ne	heavily doped diffusion length (m)
Rsh	510.0	ne	drain/source diffusion sheet resistance (Ohm/square)
Rsc	0.0	ne	source contact resistance (Ohm)
Rdc	0.0	ne	drain contact resistance (Ohm)
Cgso	1.5e-10	ne	gate to source overlap capacitance (F/m)
Cgdo	1.5e-10	ne	gate to drain overlap capacitance (F/m)
Cgbo	4.0e-10	ne	gate to bulk overlap capacitance (F/m)
Iba	2e8	ne	first impact ionization coefficient (1/m)
Ibb	3.5e8	ne	second impact ionization coefficient (V/m)
Ibn	1.0	ne	saturation voltage factor for impact ionization
Kf	1.0e-27	ne	koeficient 1/f rušení
Af	1.0	ne	exponent 1/f rušení
Avto	0.0	ne	area related theshold voltage mismatch parameter (V*m)
Akp	0.0	ne	area related gain mismatch parameter (m)
Agamma	0.0	ne	area related body effect mismatch parameter (sqrt(V)*m)
N	1.0	ne	koeficient ideality
Is	1e-14	ne	saturation current (A)
Bv	100	ne	reverse breakdown voltage (V)
Ibv	1e-3	ne	current at reverse breakdown voltage (A)
Vj	1.0	ne	junction potential (V)
Cj0	300e-15	ne	zero-bias junction capacitance (F)
M	0.5	ne	koeficient gradace
Area	1.0	ne	diode relative area
Fc	0.5	ne	linearizační koeficient kapacity v závěrném směru
Tt	0.1e-9	ne	transit time (s)
Xti	3.0	ne	teplotní exponent saturačního proudu
Xpart	0.4	ne	charge partition parameter
Tnom	26.85	ne	parameter measurement temperature (Celsius)
Temp	26.85	ne	simulation temperature

Epfl-Ekv Pmos 2.6¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	EPFL-EKV PMOS 2.6
Popis	EPFL-EKV MOS 2.6 verilog device
Schematic entry	`EKV26MOS`
Netlist entry	`M`
Typ	AnalogComponent
Bitmap file	EKV26pMOS
vlastnosti	55
Category	verilog-a devices

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Typ	pmos	ano	polarity [nmos, pmos]
LEVEL	1	ne	long = 1, short = 2
L	0.5e-6	ne	length parameter (m)
W	10e-6	ne	Width parameter (m)
Np	1.0	ne	parallel multiple device number
Ns	1.0	ne	series multiple device number
Cox	3.45e-3	ne	gate oxide capacitance per unit area (F/m**2)
Xj	0.15e-6	ne	metallurgical junction depth (m)
Dw	-0.03e-6	ne	channel width correction (m)
Dl	-0.05e-6	ne	channel length correction (m)
Vto	-0.55	ne	long channel threshold voltage (V)
Gamma	0.69	ne	body effect parameter (V**(1/2))
Phi	0.87	ne	bulk Fermi potential (V)
Kp	35e-6	ne	transconductance parameter (A/V**2)
Theta	50e-3	ne	mobility reduction coefficient (1/V)
EO	51.0e6	ne	mobility coefficient (V/m)
Ucrit	18.0e6	ne	longitudinal critical field (V/m)
Lambda	1.1	ne	depletion length coefficient
Weta	0.0	ne	narrow-channel effect coefficient
Leta	0.45	ne	longitudinal critical field
Q0	200e-6	ne	reverse short channel charge density (As/m*2)
Lk	0.6e-6	ne	characteristic length (m)
Tcv	-1.4e-3	ne	threshold voltage temperature coefficient (V/K)
Bex	-1.4	ne	mobility temperature coefficient
Ucex	2.0	ne	Longitudinal critical field temperature exponent
Ibbt	0.0	ne	Ibb temperature coefficient (1/K)
Hdif	0.9e-6	ne	heavily doped diffusion length (m)
Rsh	990.0	ne	drain/source diffusion sheet resistance (Ohm/square)
Rsc	0.0	ne	source contact resistance (Ohm)
Rdc	0.0	ne	drain contact resistance (Ohm)
Cgso	1.5e-10	ne	gate to source overlap capacitance (F/m)
Cgdo	1.5e-10	ne	gate to drain overlap capacitance (F/m)
Cgbo	4.0e-10	ne	gate to bulk overlap capacitance (F/m)
Iba	0.0	ne	first impact ionization coefficient (1/m)
Ibb	3.0e8	ne	second impact ionization coefficient (V/m)
Ibn	1.0	ne	saturation voltage factor for impact ionization
Kf	1.0e-28	ne	koeficient 1/f rušení
Af	1.0	ne	exponent 1/f rušení
Avto	0.0	ne	area related theshold voltage mismatch parameter (V*m)
Akp	0.0	ne	area related gain mismatch parameter (m)
Agamma	0.0	ne	area related body effect mismatch parameter (sqrt(V)*m)
N	1.0	ne	koeficient ideality
Is	1e-14	ne	saturation current (A)
Bv	100	ne	reverse breakdown voltage (V)
Ibv	1e-3	ne	current at reverse breakdown voltage (A)
Vj	1.0	ne	junction potential (V)
Cj0	300e-15	ne	zero-bias junction capacitance (F)
M	0.5	ne	koeficient gradace
Area	1.0	ne	diode relative area
Fc	0.5	ne	linearizační koeficient kapacity v závěrném směru
Tt	0.1e-9	ne	transit time (s)
Xti	3.0	ne	teplotní exponent saturačního proudu
Xpart	0.4	ne	charge partition parameter
Tnom	26.85	ne	parameter measurement temperature (Celsius)
Temp	26.85	ne	simulation temperature

Bsim3V34Nmos¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	bsim3v34nMOS
Popis	bsim3v34nMOS verilog device
Schematic entry	`bsim3v34nMOS`
Netlist entry	`BSIM3_`
Typ	AnalogComponent
Bitmap file	bsim3v34nMOS
vlastnosti	408
Category	verilog-a devices

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
L	0.35e-6	ne	-
W	5.0e-6	ne	-
PS	8.0e-6	ne	-
PD	8.0e-6	ne	-
AS	12.0e-12	ne	-
AD	12.0e-12	ne	-
NRS	10.0	ne	-
NRD	10.0	ne	-
NQSMOD	0	ne	-
GMIN	1e-12	ne	-
VERSION	3.24	ne	-
PARAMCHK	0	ne	-
MOBMOD	1	ne	-
CAPMOD	3	ne	-
NOIMOD	4	ne	-
BINUNIT	1	ne	-
TOX	150.0e-10	ne	-
TOXM	150.0e-10	ne	-
CDSC	2.4e-4	ne	-
CDSCB	0.0	ne	-
CDSCD	0.0	ne	-
CIT	0.0	ne	-
NFACTOR	1	ne	-
XJ	0.15e-6	ne	-
VSAT	8.0e4	ne	-
AT	3.3e4	ne	-
A0	1.0	ne	-
AGS	0.0	ne	-
A1	0.0	ne	-
A2	1.0	ne	-
KETA	-0.047	ne	-
NSUB	-99.0	ne	-
NCH	-99.0	ne	-
NGATE	0	ne	-
GAMMA1	-99.0	ne	-
GAMMA2	-99.0	ne	-
VBX	-99.0	ne	-
VBM	-3.0	ne	-
XT	-99.0	ne	-
K1	-99.0	ne	-
KT1	-0.11	ne	-
KT1L	0.0	ne	-
KT2	0.022	ne	-
K2	-99.0	ne	-
K3	80.0	ne	-
K3B	0.0	ne	-
W0	2.5e-6	ne	-
NLX	1.74e-7	ne	-
DVT0	2.2	ne	-
DVT1	0.53	ne	-
DVT2	-0.032	ne	-
DVT0W	0.0	ne	-
DVT1W	5.3e6	ne	-
DVT2W	-0.032	ne	-
DROUT	0.56	ne	-
DSUB	0.56	ne	-
VTHO	0.7	ne	-
VTH0	0.7	ne	-
UA	2.25e-9	ne	-
UA1	4.31e-9	ne	-
UB	5.87e-19	ne	-
UB1	-7.61e-18	ne	-
UC	-99.0	ne	-
UC1	-99.0	ne	-
U0	-99.0	ne	-
UTE	-1.5	ne	-
VOFF	-0.08	ne	-
TNOM	26.85	ne	-
CGSO	-99.0	ne	-
CGDO	-99.0	ne	-
CGBO	-99.0	ne	-
XPART	0.4	ne	-
ELM	5.0	ne	-
DELTA	0.01	ne	-
RSH	0.0	ne	-
RDSW	0	ne	-
PRWG	0.0	ne	-
PRWB	0.0	ne	-
PRT	0.0	ne	-
ETA0	0.08	ne	-
ETAB	-0.07	ne	-
PCLM	1.3	ne	-
PDIBLC1	0.39	ne	-
PDIBLC2	0.0086	ne	-
PDIBLCB	0.0	ne	-
PSCBE1	4.24e8	ne	-
PSCBE2	1.0e-5	ne	-
PVAG	0.0	ne	-
JS	1.0E-4	ne	-
JSW	0.0	ne	-
PB	1.0	ne	-
NJ	1.0	ne	-
XTI	3.0	ne	-
MJ	0.5	ne	-
PBSW	1.0	ne	-
MJSW	0.33	ne	-
PBSWG	1.0	ne	-
MJSWG	0.33	ne	-
CJ	5.0E-4	ne	-
VFBCV	-1.0	ne	-
VFB	-99.0	ne	-
CJSW	5.0E-10	ne	-
CJSWG	5.0e-10	ne	-
TPB	0.0	ne	-
TCJ	0.0	ne	-
TPBSW	0.0	ne	-
TCJSW	0.0	ne	-
TPBSWG	0.0	ne	-
TCJSWG	0.0	ne	-
ACDE	1.0	ne	-
MOIN	15.0	ne	-
NOFF	1.0	ne	-
VOFFCV	0.0	ne	-
LINT	0.0	ne	-
LL	0.0	ne	-
LLC	0.0	ne	-
LLN	1.0	ne	-
LW	0.0	ne	-
LWC	0.0	ne	-
LWN	1.0	ne	-
LWL	0.0	ne	-
LWLC	0.0	ne	-
LMIN	0.0	ne	-
LMAX	1.0	ne	-
WR	1.0	ne	-
WINT	0.0	ne	-
DWG	0.0	ne	-
DWB	0.0	ne	-
WL	0.0	ne	-
WLC	0.0	ne	-
WLN	1.0	ne	-
WW	0.0	ne	-
WWC	0.0	ne	-
WWN	1.0	ne	-
WWL	0.0	ne	-
WWLC	0.0	ne	-
WMIN	0.0	ne	-
WMAX	1.0	ne	-
B0	0.0	ne	-
B1	0.0	ne	-
CGSL	0.0	ne	-
CGDL	0.0	ne	-
CKAPPA	0.6	ne	-
CF	-99.0	ne	-
CLC	0.1e-6	ne	-
CLE	0.6	ne	-
DWC	0.0	ne	-
DLC	-99.0	ne	-
ALPHA0	0.0	ne	-
ALPHA1	0.0	ne	-
BETA0	30.0	ne	-
IJTH	0.1	ne	-
LCDSC	0.0	ne	-
LCDSCB	0.0	ne	-
LCDSCD	0.0	ne	-
LCIT	0.0	ne	-
LNFACTOR	0.0	ne	-
LXJ	0.0	ne	-
LVSAT	0.0	ne	-
LAT	0.0	ne	-
LA0	0.0	ne	-
LAGS	0.0	ne	-
LA1	0.0	ne	-
LA2	0.0	ne	-
LKETA	0.0	ne	-
LNSUB	0.0	ne	-
LNCH	0.0	ne	-
LNGATE	0.0	ne	-
LGAMMA1	-99.0	ne	-
LGAMMA2	-99.0	ne	-
LVBX	-99.0	ne	-
LVBM	0.0	ne	-
LXT	0.0	ne	-
LK1	-99.0	ne	-
LKT1	0.0	ne	-
LKT1L	0.0	ne	-
LKT2	0.0	ne	-
LK2	-99.0	ne	-
LK3	0.0	ne	-
LK3B	0.0	ne	-
LW0	0.0	ne	-
LNLX	0.0	ne	-
LDVT0	0.0	ne	-
LDVT1	0.0	ne	-
LDVT2	0.0	ne	-
LDVT0W	0.0	ne	-
LDVT1W	0.0	ne	-
LDVT2W	0.0	ne	-
LDROUT	0.0	ne	-
LDSUB	0.0	ne	-
LVTH0	0.0	ne	-
LVTHO	0.0	ne	-
LUA	0.0	ne	-
LUA1	0.0	ne	-
LUB	0.0	ne	-
LUB1	0.0	ne	-
LUC	0.0	ne	-
LUC1	0.0	ne	-
LU0	0.0	ne	-
LUTE	0.0	ne	-
LVOFF	0.0	ne	-
LELM	0.0	ne	-
LDELTA	0.0	ne	-
LRDSW	0.0	ne	-
LPRWG	0.0	ne	-
LPRWB	0.0	ne	-
LPRT	0.0	ne	-
LETA0	0.0	ne	-
LETAB	0.0	ne	-
LPCLM	0.0	ne	-
LPDIBLC1	0.0	ne	-
LPDIBLC2	0.0	ne	-
LPDIBLCB	0.0	ne	-
LPSCBE1	0.0	ne	-
LPSCBE2	0.0	ne	-
LPVAG	0.0	ne	-
LWR	0.0	ne	-
LDWG	0.0	ne	-
LDWB	0.0	ne	-
LB0	0.0	ne	-
LB1	0.0	ne	-
LCGSL	0.0	ne	-
LCGDL	0.0	ne	-
LCKAPPA	0.0	ne	-
LCF	0.0	ne	-
LCLC	0.0	ne	-
LCLE	0.0	ne	-
LALPHA0	0.0	ne	-
LALPHA1	0.0	ne	-
LBETA0	0.0	ne	-
LVFBCV	0.0	ne	-
LVFB	0.0	ne	-
LACDE	0.0	ne	-
LMOIN	0.0	ne	-
LNOFF	0.0	ne	-
LVOFFCV	0.0	ne	-
WCDSC	0.0	ne	-
WCDSCB	0.0	ne	-
WCDSCD	0.0	ne	-
WCIT	0.0	ne	-
WNFACTOR	0.0	ne	-
WXJ	0.0	ne	-
WVSAT	0.0	ne	-
WAT	0.0	ne	-
WA0	0.0	ne	-
WAGS	0.0	ne	-
WA1	0.0	ne	-
WA2	0.0	ne	-
WKETA	0.0	ne	-
WNSUB	0.0	ne	-
WNCH	0.0	ne	-
WNGATE	0.0	ne	-
WGAMMA1	-99.0	ne	-
WGAMMA2	-99.0	ne	-
WVBX	-99.0	ne	-
WVBM	0.0	ne	-
WXT	0.0	ne	-
WK1	-99.0	ne	-
WKT1	0.0	ne	-
WKT1L	0.0	ne	-
WKT2	0.0	ne	-
WK2	-99.0	ne	-
WK3	0.0	ne	-
WK3B	0.0	ne	-
WW0	0.0	ne	-
WNLX	0.0	ne	-
WDVT0	0.0	ne	-
WDVT1	0.0	ne	-
WDVT2	0.0	ne	-
WDVT0W	0.0	ne	-
WDVT1W	0.0	ne	-
WDVT2W	0.0	ne	-
WDROUT	0.0	ne	-
WDSUB	0.0	ne	-
WVTH0	0.0	ne	-
WVTHO	0.0	ne	-
WUA	0.0	ne	-
WUA1	0.0	ne	-
WUB	0.0	ne	-
WUB1	0.0	ne	-
WUC	0.0	ne	-
WUC1	0.0	ne	-
WU0	0.0	ne	-
WUTE	0.0	ne	-
WVOFF	0.0	ne	-
WELM	0.0	ne	-
WDELTA	0.0	ne	-
WRDSW	0.0	ne	-
WPRWG	0.0	ne	-
WPRWB	0.0	ne	-
WPRT	0.0	ne	-
WETA0	0.0	ne	-
WETAB	0.0	ne	-
WPCLM	0.0	ne	-
WPDIBLC1	0.0	ne	-
WPDIBLC2	0.0	ne	-
WPDIBLCB	0.0	ne	-
WPSCBE1	0.0	ne	-
WPSCBE2	0.0	ne	-
WPVAG	0.0	ne	-
WWR	0.0	ne	-
WDWG	0.0	ne	-
WDWB	0.0	ne	-
WB0	0.0	ne	-
WB1	0.0	ne	-
WCGSL	0.0	ne	-
WCGDL	0.0	ne	-
WCKAPPA	0.0	ne	-
WCF	0.0	ne	-
WCLC	0.0	ne	-
WCLE	0.0	ne	-
WALPHA0	0.0	ne	-
WALPHA1	0.0	ne	-
WBETA0	0.0	ne	-
WVFBCV	0.0	ne	-
WVFB	0.0	ne	-
WACDE	0.0	ne	-
WMOIN	0.0	ne	-
WNOFF	0.0	ne	-
WVOFFCV	0.0	ne	-
PCDSC	0.0	ne	-
PCDSCB	0.0	ne	-
PCDSCD	0.0	ne	-
PCIT	0.0	ne	-
PNFACTOR	0.0	ne	-
PXJ	0.0	ne	-
PVSAT	0.0	ne	-
PAT	0.0	ne	-
PA0	0.0	ne	-
PAGS	0.0	ne	-
PA1	0.0	ne	-
PA2	0.0	ne	-
PKETA	0.0	ne	-
PNSUB	0.0	ne	-
PNCH	0.0	ne	-
PNGATE	0.0	ne	-
PGAMMA1	-99.0	ne	-
PGAMMA2	-99.0	ne	-
PVBX	-99.0	ne	-
PVBM	0.0	ne	-
PXT	0.0	ne	-
PK1	-99.0	ne	-
PKT1	0.0	ne	-
PKT1L	0.0	ne	-
PKT2	0.0	ne	-
PK2	-99.0	ne	-
PK3	0.0	ne	-
PK3B	0.0	ne	-
PW0	0.0	ne	-
PNLX	0.0	ne	-
PDVT0	0.0	ne	-
PDVT1	0.0	ne	-
PDVT2	0.0	ne	-
PDVT0W	0.0	ne	-
PDVT1W	0.0	ne	-
PDVT2W	0.0	ne	-
PDROUT	0.0	ne	-
PDSUB	0.0	ne	-
PVTH0	0.0	ne	-
PVTHO	0.0	ne	-
PUA	0.0	ne	-
PUA1	0.0	ne	-
PUB	0.0	ne	-
PUB1	0.0	ne	-
PUC	0.0	ne	-
PUC1	0.0	ne	-
PU0	0.0	ne	-
PUTE	0.0	ne	-
PVOFF	0.0	ne	-
PELM	0.0	ne	-
PDELTA	0.0	ne	-
PRDSW	0.0	ne	-
PPRWG	0.0	ne	-
PPRWB	0.0	ne	-
PPRT	0.0	ne	-
PETA0	0.0	ne	-
PETAB	0.0	ne	-
PPCLM	0.0	ne	-
PPDIBLC1	0.0	ne	-
PPDIBLC2	0.0	ne	-
PPDIBLCB	0.0	ne	-
PPSCBE1	0.0	ne	-
PPSCBE2	0.0	ne	-
PPVAG	0.0	ne	-
PWR	0.0	ne	-
PDWG	0.0	ne	-
PDWB	0.0	ne	-
PB0	0.0	ne	-
PB1	0.0	ne	-
PCGSL	0.0	ne	-
PCGDL	0.0	ne	-
PCKAPPA	0.0	ne	-
PCF	0.0	ne	-
PCLC	0.0	ne	-
PCLE	0.0	ne	-
PALPHA0	0.0	ne	-
PALPHA1	0.0	ne	-
PBETA0	0.0	ne	-
PVFBCV	0.0	ne	-
PVFB	0.0	ne	-
PACDE	0.0	ne	-
PMOIN	0.0	ne	-
PNOFF	0.0	ne	-
PVOFFCV	0.0	ne	-
KF	0.0	ne	-
AF	1.0	ne	-
EF	1.0	ne	-
Temp	26.85	ne	simulation temperature

Bsim3V34Pmos¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	bsim3v34pMOS
Popis	bsim3v34pMOS verilog device
Schematic entry	`bsim3v34pMOS`
Netlist entry	`BSIM3_`
Typ	AnalogComponent
Bitmap file	bsim3v34pMOS
vlastnosti	408
Category	verilog-a devices

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
L	3.5e-6	ne	-
W	5.0e-6	ne	-
PS	8.0e-6	ne	-
PD	8.0e-6	ne	-
AS	12.0e-12	ne	-
AD	12.0e-12	ne	-
NRS	10.0	ne	-
NRD	10.0	ne	-
NQSMOD	0	ne	-
GMIN	1e-12	ne	-
VERSION	3.24	ne	-
PARAMCHK	0	ne	-
MOBMOD	1	ne	-
CAPMOD	3	ne	-
NOIMOD	4	ne	-
BINUNIT	1	ne	-
TOX	150.0e-10	ne	-
TOXM	150.0e-10	ne	-
CDSC	2.4e-4	ne	-
CDSCB	0.0	ne	-
CDSCD	0.0	ne	-
CIT	0.0	ne	-
NFACTOR	1	ne	-
XJ	0.15e-6	ne	-
VSAT	8.0e4	ne	-
AT	3.3e4	ne	-
A0	1.0	ne	-
AGS	0.0	ne	-
A1	0.0	ne	-
A2	1.0	ne	-
KETA	-0.047	ne	-
NSUB	-99.0	ne	-
NCH	-99.0	ne	-
NGATE	0	ne	-
GAMMA1	-99.0	ne	-
GAMMA2	-99.0	ne	-
VBX	-99.0	ne	-
VBM	-3.0	ne	-
XT	-99.0	ne	-
K1	-99.0	ne	-
KT1	-0.11	ne	-
KT1L	0.0	ne	-
KT2	0.022	ne	-
K2	-99.0	ne	-
K3	80.0	ne	-
K3B	0.0	ne	-
W0	2.5e-6	ne	-
NLX	1.74e-7	ne	-
DVT0	2.2	ne	-
DVT1	0.53	ne	-
DVT2	-0.032	ne	-
DVT0W	0.0	ne	-
DVT1W	5.3e6	ne	-
DVT2W	-0.032	ne	-
DROUT	0.56	ne	-
DSUB	0.56	ne	-
VTHO	-0.7	ne	-
VTH0	-0.7	ne	-
UA	2.25e-9	ne	-
UA1	4.31e-9	ne	-
UB	5.87e-19	ne	-
UB1	-7.61e-18	ne	-
UC	-99.0	ne	-
UC1	-99.0	ne	-
U0	-99.0	ne	-
UTE	-1.5	ne	-
VOFF	-0.08	ne	-
TNOM	26.85	ne	-
CGSO	-99.0	ne	-
CGDO	-99.0	ne	-
CGBO	-99.0	ne	-
XPART	0.4	ne	-
ELM	5.0	ne	-
DELTA	0.01	ne	-
RSH	0.0	ne	-
RDSW	0	ne	-
PRWG	0.0	ne	-
PRWB	0.0	ne	-
PRT	0.0	ne	-
ETA0	0.08	ne	-
ETAB	-0.07	ne	-
PCLM	1.3	ne	-
PDIBLC1	0.39	ne	-
PDIBLC2	0.0086	ne	-
PDIBLCB	0.0	ne	-
PSCBE1	4.24e8	ne	-
PSCBE2	1.0e-5	ne	-
PVAG	0.0	ne	-
JS	1.0E-4	ne	-
JSW	0.0	ne	-
PB	1.0	ne	-
NJ	1.0	ne	-
XTI	3.0	ne	-
MJ	0.5	ne	-
PBSW	1.0	ne	-
MJSW	0.33	ne	-
PBSWG	1.0	ne	-
MJSWG	0.33	ne	-
CJ	5.0E-4	ne	-
VFBCV	-1.0	ne	-
VFB	-99.0	ne	-
CJSW	5.0E-10	ne	-
CJSWG	5.0e-10	ne	-
TPB	0.0	ne	-
TCJ	0.0	ne	-
TPBSW	0.0	ne	-
TCJSW	0.0	ne	-
TPBSWG	0.0	ne	-
TCJSWG	0.0	ne	-
ACDE	1.0	ne	-
MOIN	15.0	ne	-
NOFF	1.0	ne	-
VOFFCV	0.0	ne	-
LINT	0.0	ne	-
LL	0.0	ne	-
LLC	0.0	ne	-
LLN	1.0	ne	-
LW	0.0	ne	-
LWC	0.0	ne	-
LWN	1.0	ne	-
LWL	0.0	ne	-
LWLC	0.0	ne	-
LMIN	0.0	ne	-
LMAX	1.0	ne	-
WR	1.0	ne	-
WINT	0.0	ne	-
DWG	0.0	ne	-
DWB	0.0	ne	-
WL	0.0	ne	-
WLC	0.0	ne	-
WLN	1.0	ne	-
WW	0.0	ne	-
WWC	0.0	ne	-
WWN	1.0	ne	-
WWL	0.0	ne	-
WWLC	0.0	ne	-
WMIN	0.0	ne	-
WMAX	1.0	ne	-
B0	0.0	ne	-
B1	0.0	ne	-
CGSL	0.0	ne	-
CGDL	0.0	ne	-
CKAPPA	0.6	ne	-
CF	-99.0	ne	-
CLC	0.1e-6	ne	-
CLE	0.6	ne	-
DWC	0.0	ne	-
DLC	-99.0	ne	-
ALPHA0	0.0	ne	-
ALPHA1	0.0	ne	-
BETA0	30.0	ne	-
IJTH	0.1	ne	-
LCDSC	0.0	ne	-
LCDSCB	0.0	ne	-
LCDSCD	0.0	ne	-
LCIT	0.0	ne	-
LNFACTOR	0.0	ne	-
LXJ	0.0	ne	-
LVSAT	0.0	ne	-
LAT	0.0	ne	-
LA0	0.0	ne	-
LAGS	0.0	ne	-
LA1	0.0	ne	-
LA2	0.0	ne	-
LKETA	0.0	ne	-
LNSUB	0.0	ne	-
LNCH	0.0	ne	-
LNGATE	0.0	ne	-
LGAMMA1	-99.0	ne	-
LGAMMA2	-99.0	ne	-
LVBX	-99.0	ne	-
LVBM	0.0	ne	-
LXT	0.0	ne	-
LK1	-99.0	ne	-
LKT1	0.0	ne	-
LKT1L	0.0	ne	-
LKT2	0.0	ne	-
LK2	-99.0	ne	-
LK3	0.0	ne	-
LK3B	0.0	ne	-
LW0	0.0	ne	-
LNLX	0.0	ne	-
LDVT0	0.0	ne	-
LDVT1	0.0	ne	-
LDVT2	0.0	ne	-
LDVT0W	0.0	ne	-
LDVT1W	0.0	ne	-
LDVT2W	0.0	ne	-
LDROUT	0.0	ne	-
LDSUB	0.0	ne	-
LVTH0	0.0	ne	-
LVTHO	0.0	ne	-
LUA	0.0	ne	-
LUA1	0.0	ne	-
LUB	0.0	ne	-
LUB1	0.0	ne	-
LUC	0.0	ne	-
LUC1	0.0	ne	-
LU0	0.0	ne	-
LUTE	0.0	ne	-
LVOFF	0.0	ne	-
LELM	0.0	ne	-
LDELTA	0.0	ne	-
LRDSW	0.0	ne	-
LPRWG	0.0	ne	-
LPRWB	0.0	ne	-
LPRT	0.0	ne	-
LETA0	0.0	ne	-
LETAB	0.0	ne	-
LPCLM	0.0	ne	-
LPDIBLC1	0.0	ne	-
LPDIBLC2	0.0	ne	-
LPDIBLCB	0.0	ne	-
LPSCBE1	0.0	ne	-
LPSCBE2	0.0	ne	-
LPVAG	0.0	ne	-
LWR	0.0	ne	-
LDWG	0.0	ne	-
LDWB	0.0	ne	-
LB0	0.0	ne	-
LB1	0.0	ne	-
LCGSL	0.0	ne	-
LCGDL	0.0	ne	-
LCKAPPA	0.0	ne	-
LCF	0.0	ne	-
LCLC	0.0	ne	-
LCLE	0.0	ne	-
LALPHA0	0.0	ne	-
LALPHA1	0.0	ne	-
LBETA0	0.0	ne	-
LVFBCV	0.0	ne	-
LVFB	0.0	ne	-
LACDE	0.0	ne	-
LMOIN	0.0	ne	-
LNOFF	0.0	ne	-
LVOFFCV	0.0	ne	-
WCDSC	0.0	ne	-
WCDSCB	0.0	ne	-
WCDSCD	0.0	ne	-
WCIT	0.0	ne	-
WNFACTOR	0.0	ne	-
WXJ	0.0	ne	-
WVSAT	0.0	ne	-
WAT	0.0	ne	-
WA0	0.0	ne	-
WAGS	0.0	ne	-
WA1	0.0	ne	-
WA2	0.0	ne	-
WKETA	0.0	ne	-
WNSUB	0.0	ne	-
WNCH	0.0	ne	-
WNGATE	0.0	ne	-
WGAMMA1	-99.0	ne	-
WGAMMA2	-99.0	ne	-
WVBX	-99.0	ne	-
WVBM	0.0	ne	-
WXT	0.0	ne	-
WK1	-99.0	ne	-
WKT1	0.0	ne	-
WKT1L	0.0	ne	-
WKT2	0.0	ne	-
WK2	-99.0	ne	-
WK3	0.0	ne	-
WK3B	0.0	ne	-
WW0	0.0	ne	-
WNLX	0.0	ne	-
WDVT0	0.0	ne	-
WDVT1	0.0	ne	-
WDVT2	0.0	ne	-
WDVT0W	0.0	ne	-
WDVT1W	0.0	ne	-
WDVT2W	0.0	ne	-
WDROUT	0.0	ne	-
WDSUB	0.0	ne	-
WVTH0	0.0	ne	-
WVTHO	0.0	ne	-
WUA	0.0	ne	-
WUA1	0.0	ne	-
WUB	0.0	ne	-
WUB1	0.0	ne	-
WUC	0.0	ne	-
WUC1	0.0	ne	-
WU0	0.0	ne	-
WUTE	0.0	ne	-
WVOFF	0.0	ne	-
WELM	0.0	ne	-
WDELTA	0.0	ne	-
WRDSW	0.0	ne	-
WPRWG	0.0	ne	-
WPRWB	0.0	ne	-
WPRT	0.0	ne	-
WETA0	0.0	ne	-
WETAB	0.0	ne	-
WPCLM	0.0	ne	-
WPDIBLC1	0.0	ne	-
WPDIBLC2	0.0	ne	-
WPDIBLCB	0.0	ne	-
WPSCBE1	0.0	ne	-
WPSCBE2	0.0	ne	-
WPVAG	0.0	ne	-
WWR	0.0	ne	-
WDWG	0.0	ne	-
WDWB	0.0	ne	-
WB0	0.0	ne	-
WB1	0.0	ne	-
WCGSL	0.0	ne	-
WCGDL	0.0	ne	-
WCKAPPA	0.0	ne	-
WCF	0.0	ne	-
WCLC	0.0	ne	-
WCLE	0.0	ne	-
WALPHA0	0.0	ne	-
WALPHA1	0.0	ne	-
WBETA0	0.0	ne	-
WVFBCV	0.0	ne	-
WVFB	0.0	ne	-
WACDE	0.0	ne	-
WMOIN	0.0	ne	-
WNOFF	0.0	ne	-
WVOFFCV	0.0	ne	-
PCDSC	0.0	ne	-
PCDSCB	0.0	ne	-
PCDSCD	0.0	ne	-
PCIT	0.0	ne	-
PNFACTOR	0.0	ne	-
PXJ	0.0	ne	-
PVSAT	0.0	ne	-
PAT	0.0	ne	-
PA0	0.0	ne	-
PAGS	0.0	ne	-
PA1	0.0	ne	-
PA2	0.0	ne	-
PKETA	0.0	ne	-
PNSUB	0.0	ne	-
PNCH	0.0	ne	-
PNGATE	0.0	ne	-
PGAMMA1	-99.0	ne	-
PGAMMA2	-99.0	ne	-
PVBX	-99.0	ne	-
PVBM	0.0	ne	-
PXT	0.0	ne	-
PK1	-99.0	ne	-
PKT1	0.0	ne	-
PKT1L	0.0	ne	-
PKT2	0.0	ne	-
PK2	-99.0	ne	-
PK3	0.0	ne	-
PK3B	0.0	ne	-
PW0	0.0	ne	-
PNLX	0.0	ne	-
PDVT0	0.0	ne	-
PDVT1	0.0	ne	-
PDVT2	0.0	ne	-
PDVT0W	0.0	ne	-
PDVT1W	0.0	ne	-
PDVT2W	0.0	ne	-
PDROUT	0.0	ne	-
PDSUB	0.0	ne	-
PVTH0	0.0	ne	-
PVTHO	0.0	ne	-
PUA	0.0	ne	-
PUA1	0.0	ne	-
PUB	0.0	ne	-
PUB1	0.0	ne	-
PUC	0.0	ne	-
PUC1	0.0	ne	-
PU0	0.0	ne	-
PUTE	0.0	ne	-
PVOFF	0.0	ne	-
PELM	0.0	ne	-
PDELTA	0.0	ne	-
PRDSW	0.0	ne	-
PPRWG	0.0	ne	-
PPRWB	0.0	ne	-
PPRT	0.0	ne	-
PETA0	0.0	ne	-
PETAB	0.0	ne	-
PPCLM	0.0	ne	-
PPDIBLC1	0.0	ne	-
PPDIBLC2	0.0	ne	-
PPDIBLCB	0.0	ne	-
PPSCBE1	0.0	ne	-
PPSCBE2	0.0	ne	-
PPVAG	0.0	ne	-
PWR	0.0	ne	-
PDWG	0.0	ne	-
PDWB	0.0	ne	-
PB0	0.0	ne	-
PB1	0.0	ne	-
PCGSL	0.0	ne	-
PCGDL	0.0	ne	-
PCKAPPA	0.0	ne	-
PCF	0.0	ne	-
PCLC	0.0	ne	-
PCLE	0.0	ne	-
PALPHA0	0.0	ne	-
PALPHA1	0.0	ne	-
PBETA0	0.0	ne	-
PVFBCV	0.0	ne	-
PVFB	0.0	ne	-
PACDE	0.0	ne	-
PMOIN	0.0	ne	-
PNOFF	0.0	ne	-
PVOFFCV	0.0	ne	-
KF	0.0	ne	-
AF	1.0	ne	-
EF	1.0	ne	-
Temp	26.85	ne	simulation temperature

Bsim4V30Nmos¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	bsim4v30nMOS
Popis	bsim4v30nMOS verilog device
Schematic entry	`bsim4v30nMOS`
Netlist entry	`BSIM4_`
Typ	AnalogComponent
Bitmap file	bsim4v30nMOS
vlastnosti	278
Category	verilog-a devices

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
GMIN	1e-12	ne	-
PS	12e-6	ne	-
PD	12e-6	ne	-
AS	12e-12	ne	-
AD	12e-12	ne	-
CGBO	-99.0	ne	-
CGDO	-99.0	ne	-
CGSO	-99.0	ne	-
L	3e-6	ne	-
W	6e-6	ne	-
MOBMOD	-99.0	ne	-
RDSMOD	-99.0	ne	-
IGCMOD	0	ne	-
IGBMOD	0	ne	-
CAPMOD	2	ne	-
RGATEMOD	2	ne	-
RBODYMOD	0	ne	-
DIOMOD	1	ne	-
TEMPMOD	-99.0	ne	-
GEOMOD	0	ne	-
RGEOMOD	0	ne	-
PERMOD	1	ne	-
TNOIMOD	0	ne	-
FNOIMOD	0	ne	-
EPSROX	3.9	ne	-
TOXE	-99.0	ne	-
TOXP	-99.0	ne	-
TOXM	-99.0	ne	-
DTOX	0.0	ne	-
XJ	1.5e-7	ne	-
GAMMA1	-99.0	ne	-
GAMMA2	-99.0	ne	-
NDEP	-99.0	ne	-
NSUB	6.0e16	ne	-
NGATE	0.0	ne	-
NSD	1.0e20	ne	-
VBX	-99.0	ne	-
XT	1.55e-7	ne	-
RSH	0.0	ne	-
RSHG	0.0	ne	-
VTH0	0.6	ne	-
VFB	-99.0	ne	-
PHIN	0.0	ne	-
K1	-99.0	ne	-
K2	-99.0	ne	-
K3	80.0	ne	-
K3B	0.0	ne	-
W0	2.5e-6	ne	-
LPE0	1.74e-7	ne	-
LPEB	0.0	ne	-
VBM	-3.0	ne	-
DVT0	2.2	ne	-
DVT1	0.53	ne	-
DVT2	-0.032	ne	-
DVTP0	0.0	ne	-
DVTP1	0.0	ne	-
DVT0W	0.0	ne	-
DVT1W	5.3e6	ne	-
DVT2W	-0.032	ne	-
U0	-99.0	ne	-
UA	-99.0	ne	-
UB	1.0e-19	ne	-
UC	-99.0	ne	-
EU	-99.0	ne	-
VSAT	8.0e4	ne	-
A0	1.0	ne	-
AGS	0.0	ne	-
B0	0.0	ne	-
B1	0.0	ne	-
KETA	-0.047	ne	-
A1	0.0	ne	-
A2	1.0	ne	-
WINT	0.0	ne	-
LINT	0.0	ne	-
DWG	0.0	ne	-
DWB	0.0	ne	-
VOFF	-0.08	ne	-
VOFFL	0.0	ne	-
MINV	0.0	ne	-
NFACTOR	1.0	ne	-
ETA0	0.08	ne	-
ETAB	-0.07	ne	-
DROUT	0.56	ne	-
DSUB	0.56	ne	-
CIT	0.0	ne	-
CDSC	2.4e-4	ne	-
CDSCB	0.0	ne	-
CDSCD	0.0	ne	-
PCLM	1.3	ne	-
PDIBL1	0.39	ne	-
PDIBL2	0.0086	ne	-
PDIBLB	0.0	ne	-
PSCBE1	4.24e8	ne	-
PSCBE2	1.0e-5	ne	-
PVAG	0.0	ne	-
DELTA	0.01	ne	-
FPROUT	0.0	ne	-
PDITS	0.0	ne	-
PDITSD	0.0	ne	-
PDITSL	0.0	ne	-
LAMBDA	-99.0	ne	-
VTL	-99.0	ne	-
LC	5.0e-9	ne	-
XN	3.0	ne	-
RDSW	200.0	ne	-
RDSWMIN	0.0	ne	-
RDW	100.0	ne	-
RDWMIN	0.0	ne	-
RSW	100.0	ne	-
RSWMIN	0.0	ne	-
PRWG	1.0	ne	-
PRWB	0.0	ne	-
WR	1.0	ne	-
NRS	-99.0	ne	-
NRD	-99.0	ne	-
ALPHA0	0.0	ne	-
ALPHA1	0.0	ne	-
BETA0	30.0	ne	-
AGIDL	0.0	ne	-
BGIDL	2.3e9	ne	-
CGIDL	0.5	ne	-
EGIDL	0.8	ne	-
AIGBACC	0.43	ne	-
BIGBACC	0.054	ne	-
CIGBACC	0.075	ne	-
NIGBACC	1.0	ne	-
AIGBINV	0.35	ne	-
BIGBINV	0.03	ne	-
CIGBINV	0.006	ne	-
EIGBINV	1.1	ne	-
NIGBINV	3.0	ne	-
AIGC	-99.0	ne	-
BIGC	-99.0	ne	-
CIGC	-99.0	ne	-
AIGSD	-99.0	ne	-
BIGSD	-99.0	ne	-
CIGSD	-99.0	ne	-
DLCIG	0.0	ne	-
NIGC	1.0	ne	-
POXEDGE	1.0	ne	-
PIGCD	1.0	ne	-
NTOX	1.0	ne	-
TOXREF	3.0e-9	ne	-
XPART	0.4	ne	-
CGS0	0.0	ne	-
CGD0	0.0	ne	-
CGB0	0.0	ne	-
CGSL	0.0	ne	-
CGDL	0.0	ne	-
CKAPPAS	0.6	ne	-
CKAPPAD	0.6	ne	-
CF	-99.0	ne	-
CLC	1.0e-7	ne	-
CLE	0.6	ne	-
DLC	0.0	ne	-
DWC	0.0	ne	-
VFBCV	-1.0	ne	-
NOFF	1.0	ne	-
VOFFCV	0.0	ne	-
ACDE	1.0	ne	-
MOIN	15.0	ne	-
XRCRG1	12.0	ne	-
XRCRG2	1.0	ne	-
RBPB	50.0	ne	-
RBPD	50.0	ne	-
RBPS	50.0	ne	-
RBDB	50.0	ne	-
RBSB	50.0	ne	-
GBMIN	1.0e-12	ne	-
DMCG	0.0	ne	-
DMCI	0.0	ne	-
DMDG	0.0	ne	-
DMCGT	0.0	ne	-
NF	1.0	ne	-
DWJ	0.0	ne	-
MIN	0.0	ne	-
XGW	0.0	ne	-
XGL	0.0	ne	-
XL	0.0	ne	-
XW	0.0	ne	-
NGCON	1.0	ne	-
IJTHSREV	0.1	ne	-
IJTHDREV	0.1	ne	-
IJTHSFWD	0.1	ne	-
IJTHDFWD	0.1	ne	-
XJBVS	1.0	ne	-
XJBVD	1.0	ne	-
BVS	10.0	ne	-
BVD	10.0	ne	-
JSS	1.0e-4	ne	-
JSD	1.0e-4	ne	-
JSWS	0.0	ne	-
JSWD	0.0	ne	-
JSWGS	0.0	ne	-
JSWGD	0.0	ne	-
CJS	5.0e-4	ne	-
CJD	5.0e-4	ne	-
MJS	0.5	ne	-
MJD	0.5	ne	-
MJSWS	0.33	ne	-
MJSWD	0.33	ne	-
CJSWS	5.0e-10	ne	-
CJSWD	5.0e-10	ne	-
CJSWGS	5.0e-10	ne	-
CJSWGD	5.0e-10	ne	-
MJSWGS	0.33	ne	-
MJSWGD	0.33	ne	-
PBS	1.0	ne	-
PBD	1.0	ne	-
PBSWS	1.0	ne	-
PBSWD	1.0	ne	-
PBSWGS	1.0	ne	-
PBSWGD	1.0	ne	-
TNOM	27	ne	-
UTE	-1.5	ne	-
KT1	-0.11	ne	-
KT1L	0.0	ne	-
KT2	0.022	ne	-
UA1	1.0e-9	ne	-
UB1	-1.0e-18	ne	-
UC1	-99.0	ne	-
AT	3.3e4	ne	-
PRT	0.0	ne	-
NJS	1.0	ne	-
NJD	1.0	ne	-
XTIS	3.0	ne	-
XTID	3.0	ne	-
TPB	0.0	ne	-
TPBSW	0.0	ne	-
TPBSWG	0.0	ne	-
TCJ	0.0	ne	-
TCJSW	0.0	ne	-
TCJSWG	0.0	ne	-
SA	0.0	ne	-
SB	0.0	ne	-
SD	0.0	ne	-
SAREF	1e-6	ne	-
SBREF	1e-6	ne	-
WLOD	0.0	ne	-
KU0	0.0	ne	-
KVSAT	0.0	ne	-
TKU0	0.0	ne	-
LKU0	0.0	ne	-
WKU0	0.0	ne	-
PKU0	0.0	ne	-
LLODKU0	0.0	ne	-
WLODKU0	0.0	ne	-
KVTH0	0.0	ne	-
LKVTH0	0.0	ne	-
WKVTH0	0.0	ne	-
PKVTH0	0.0	ne	-
LLODVTH	0.0	ne	-
WLODVTH	0.0	ne	-
STK2	0.0	ne	-
LODK2	1.0	ne	-
STETA0	0.0	ne	-
LODETA0	1.0	ne	-
WL	0.0	ne	-
WLN	1.0	ne	-
WW	0.0	ne	-
WWN	1.0	ne	-
WWL	0.0	ne	-
LL	0.0	ne	-
LLN	1.0	ne	-
LW	0.0	ne	-
LWN	1.0	ne	-
LWL	0.0	ne	-
LLC	0.0	ne	-
LWC	0.0	ne	-
LWLC	0.0	ne	-
WLC	0.0	ne	-
WWC	0.0	ne	-
WWLC	0.0	ne	-
NTNOI	1.0	ne	-
KF	0.0	ne	-
AF	1.0	ne	-
EF	1.0	ne	-
TEMP	27	ne	-

Bsim4V30Pmos¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	bsim4v30pMOS
Popis	bsim4v30pMOS verilog device
Schematic entry	`bsim4v30pMOS`
Netlist entry	`BSIM4_`
Typ	AnalogComponent
Bitmap file	bsim4v30pMOS
vlastnosti	278
Category	verilog-a devices

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
GMIN	1e-12	ne	-
PS	12e-6	ne	-
PD	12e-6	ne	-
AS	12e-12	ne	-
AD	12e-12	ne	-
CGBO	-99.0	ne	-
CGDO	-99.0	ne	-
CGSO	-99.0	ne	-
L	3e-6	ne	-
W	6e-6	ne	-
MOBMOD	-99.0	ne	-
RDSMOD	-99.0	ne	-
IGCMOD	0	ne	-
IGBMOD	0	ne	-
CAPMOD	2	ne	-
RGATEMOD	2	ne	-
RBODYMOD	0	ne	-
DIOMOD	1	ne	-
TEMPMOD	-99.0	ne	-
GEOMOD	0	ne	-
RGEOMOD	0	ne	-
PERMOD	1	ne	-
TNOIMOD	0	ne	-
FNOIMOD	0	ne	-
EPSROX	3.9	ne	-
TOXE	-99.0	ne	-
TOXP	-99.0	ne	-
TOXM	-99.0	ne	-
DTOX	0.0	ne	-
XJ	1.5e-7	ne	-
GAMMA1	-99.0	ne	-
GAMMA2	-99.0	ne	-
NDEP	-99.0	ne	-
NSUB	6.0e16	ne	-
NGATE	0.0	ne	-
NSD	1.0e20	ne	-
VBX	-99.0	ne	-
XT	1.55e-7	ne	-
RSH	0.0	ne	-
RSHG	0.0	ne	-
VTH0	-0.6	ne	-
VFB	-99.0	ne	-
PHIN	0.0	ne	-
K1	-99.0	ne	-
K2	-99.0	ne	-
K3	80.0	ne	-
K3B	0.0	ne	-
W0	2.5e-6	ne	-
LPE0	1.74e-7	ne	-
LPEB	0.0	ne	-
VBM	-3.0	ne	-
DVT0	2.2	ne	-
DVT1	0.53	ne	-
DVT2	-0.032	ne	-
DVTP0	0.0	ne	-
DVTP1	0.0	ne	-
DVT0W	0.0	ne	-
DVT1W	5.3e6	ne	-
DVT2W	-0.032	ne	-
U0	-99.0	ne	-
UA	-99.0	ne	-
UB	1.0e-19	ne	-
UC	-99.0	ne	-
EU	-99.0	ne	-
VSAT	8.0e4	ne	-
A0	1.0	ne	-
AGS	0.0	ne	-
B0	0.0	ne	-
B1	0.0	ne	-
KETA	-0.047	ne	-
A1	0.0	ne	-
A2	1.0	ne	-
WINT	0.0	ne	-
LINT	0.0	ne	-
DWG	0.0	ne	-
DWB	0.0	ne	-
VOFF	-0.08	ne	-
VOFFL	0.0	ne	-
MINV	0.0	ne	-
NFACTOR	1.0	ne	-
ETA0	0.08	ne	-
ETAB	-0.07	ne	-
DROUT	0.56	ne	-
DSUB	0.56	ne	-
CIT	0.0	ne	-
CDSC	2.4e-4	ne	-
CDSCB	0.0	ne	-
CDSCD	0.0	ne	-
PCLM	1.3	ne	-
PDIBL1	0.39	ne	-
PDIBL2	0.0086	ne	-
PDIBLB	0.0	ne	-
PSCBE1	4.24e8	ne	-
PSCBE2	1.0e-5	ne	-
PVAG	0.0	ne	-
DELTA	0.01	ne	-
FPROUT	0.0	ne	-
PDITS	0.0	ne	-
PDITSD	0.0	ne	-
PDITSL	0.0	ne	-
LAMBDA	-99.0	ne	-
VTL	-99.0	ne	-
LC	5.0e-9	ne	-
XN	3.0	ne	-
RDSW	200.0	ne	-
RDSWMIN	0.0	ne	-
RDW	100.0	ne	-
RDWMIN	0.0	ne	-
RSW	100.0	ne	-
RSWMIN	0.0	ne	-
PRWG	1.0	ne	-
PRWB	0.0	ne	-
WR	1.0	ne	-
NRS	-99.0	ne	-
NRD	-99.0	ne	-
ALPHA0	0.0	ne	-
ALPHA1	0.0	ne	-
BETA0	30.0	ne	-
AGIDL	0.0	ne	-
BGIDL	2.3e9	ne	-
CGIDL	0.5	ne	-
EGIDL	0.8	ne	-
AIGBACC	0.43	ne	-
BIGBACC	0.054	ne	-
CIGBACC	0.075	ne	-
NIGBACC	1.0	ne	-
AIGBINV	0.35	ne	-
BIGBINV	0.03	ne	-
CIGBINV	0.006	ne	-
EIGBINV	1.1	ne	-
NIGBINV	3.0	ne	-
AIGC	-99.0	ne	-
BIGC	-99.0	ne	-
CIGC	-99.0	ne	-
AIGSD	-99.0	ne	-
BIGSD	-99.0	ne	-
CIGSD	-99.0	ne	-
DLCIG	0.0	ne	-
NIGC	1.0	ne	-
POXEDGE	1.0	ne	-
PIGCD	1.0	ne	-
NTOX	1.0	ne	-
TOXREF	3.0e-9	ne	-
XPART	0.4	ne	-
CGS0	0.0	ne	-
CGD0	0.0	ne	-
CGB0	0.0	ne	-
CGSL	0.0	ne	-
CGDL	0.0	ne	-
CKAPPAS	0.6	ne	-
CKAPPAD	0.6	ne	-
CF	-99.0	ne	-
CLC	1.0e-7	ne	-
CLE	0.6	ne	-
DLC	0.0	ne	-
DWC	0.0	ne	-
VFBCV	-1.0	ne	-
NOFF	1.0	ne	-
VOFFCV	0.0	ne	-
ACDE	1.0	ne	-
MOIN	15.0	ne	-
XRCRG1	12.0	ne	-
XRCRG2	1.0	ne	-
RBPB	50.0	ne	-
RBPD	50.0	ne	-
RBPS	50.0	ne	-
RBDB	50.0	ne	-
RBSB	50.0	ne	-
GBMIN	1.0e-12	ne	-
DMCG	0.0	ne	-
DMCI	0.0	ne	-
DMDG	0.0	ne	-
DMCGT	0.0	ne	-
NF	1.0	ne	-
DWJ	0.0	ne	-
MIN	0.0	ne	-
XGW	0.0	ne	-
XGL	0.0	ne	-
XL	0.0	ne	-
XW	0.0	ne	-
NGCON	1.0	ne	-
IJTHSREV	0.1	ne	-
IJTHDREV	0.1	ne	-
IJTHSFWD	0.1	ne	-
IJTHDFWD	0.1	ne	-
XJBVS	1.0	ne	-
XJBVD	1.0	ne	-
BVS	10.0	ne	-
BVD	10.0	ne	-
JSS	1.0e-4	ne	-
JSD	1.0e-4	ne	-
JSWS	0.0	ne	-
JSWD	0.0	ne	-
JSWGS	0.0	ne	-
JSWGD	0.0	ne	-
CJS	5.0e-4	ne	-
CJD	5.0e-4	ne	-
MJS	0.5	ne	-
MJD	0.5	ne	-
MJSWS	0.33	ne	-
MJSWD	0.33	ne	-
CJSWS	5.0e-10	ne	-
CJSWD	5.0e-10	ne	-
CJSWGS	5.0e-10	ne	-
CJSWGD	5.0e-10	ne	-
MJSWGS	0.33	ne	-
MJSWGD	0.33	ne	-
PBS	1.0	ne	-
PBD	1.0	ne	-
PBSWS	1.0	ne	-
PBSWD	1.0	ne	-
PBSWGS	1.0	ne	-
PBSWGD	1.0	ne	-
TNOM	27	ne	-
UTE	-1.5	ne	-
KT1	-0.11	ne	-
KT1L	0.0	ne	-
KT2	0.022	ne	-
UA1	1.0e-9	ne	-
UB1	-1.0e-18	ne	-
UC1	-99.0	ne	-
AT	3.3e4	ne	-
PRT	0.0	ne	-
NJS	1.0	ne	-
NJD	1.0	ne	-
XTIS	3.0	ne	-
XTID	3.0	ne	-
TPB	0.0	ne	-
TPBSW	0.0	ne	-
TPBSWG	0.0	ne	-
TCJ	0.0	ne	-
TCJSW	0.0	ne	-
TCJSWG	0.0	ne	-
SA	0.0	ne	-
SB	0.0	ne	-
SD	0.0	ne	-
SAREF	1e-6	ne	-
SBREF	1e-6	ne	-
WLOD	0.0	ne	-
KU0	0.0	ne	-
KVSAT	0.0	ne	-
TKU0	0.0	ne	-
LKU0	0.0	ne	-
WKU0	0.0	ne	-
PKU0	0.0	ne	-
LLODKU0	0.0	ne	-
WLODKU0	0.0	ne	-
KVTH0	0.0	ne	-
LKVTH0	0.0	ne	-
WKVTH0	0.0	ne	-
PKVTH0	0.0	ne	-
LLODVTH	0.0	ne	-
WLODVTH	0.0	ne	-
STK2	0.0	ne	-
LODK2	1.0	ne	-
STETA0	0.0	ne	-
LODETA0	1.0	ne	-
WL	0.0	ne	-
WLN	1.0	ne	-
WW	0.0	ne	-
WWN	1.0	ne	-
WWL	0.0	ne	-
LL	0.0	ne	-
LLN	1.0	ne	-
LW	0.0	ne	-
LWN	1.0	ne	-
LWL	0.0	ne	-
LLC	0.0	ne	-
LWC	0.0	ne	-
LWLC	0.0	ne	-
WLC	0.0	ne	-
WWC	0.0	ne	-
WWLC	0.0	ne	-
NTNOI	1.0	ne	-
KF	0.0	ne	-
AF	1.0	ne	-
EF	1.0	ne	-
TEMP	27	ne	-

Npn Hicum L0 V1.2¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	npn HICUM L0 v1.2
Popis	HICUM Level 0 v1.2 verilog device
Schematic entry	`hicumL0V1p2`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	npnsub_therm
vlastnosti	94
Category	verilog-a devices

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Typ	npn	ano	polarity [npn, pnp]
is	1.0e-16	ne	(Modified) saturation current (A)
mcf	1.00	ne	Non-ideality coefficient of forward collector current
mcr	1.00	ne	Non-ideality coefficient of reverse collector current
vef	1.0e6	ne	forward Early voltage (normalization volt.) (V)
ver	1.0e6	ne	reverse Early voltage (normalization volt.) (V)
iqf	1.0e6	ne	forward d.c. high-injection roll-off current (A)
fiqf	0	ne	flag for turning on base related critical current
iqr	1.0e6	ne	inverse d.c. high-injection roll-off current (A)
iqfh	1.0e6	ne	high-injection correction current (A)
tfh	0.0	ne	high-injection correction factor
ahq	0	ne	Smoothing factor for the d.c. injection width
ibes	1e-18	ne	BE saturation current (A)
mbe	1.0	ne	BE non-ideality factor
ires	0.0	ne	BE recombination saturation current (A)
mre	2.0	ne	BE recombination non-ideality factor
ibcs	0.0	ne	BC saturation current (A)
mbc	1.0	ne	BC non-ideality factor
cje0	1.0e-20	ne	Zero-bias BE depletion capacitance (F)
vde	0.9	ne	BE built-in voltage (V)
ze	0.5	ne	BE exponent factor
aje	2.5	ne	Ratio of maximum to zero-bias value
vdedc	0.9	ne	BE charge built-in voltage for d.c. transfer current (V)
zedc	0.5	ne	charge BE exponent factor for d.c. transfer current
ajedc	2.5	ne	BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current
t0	0.0	ne	low current transit time at Vbici=0 (s)
dt0h	0.0	ne	Base width modulation contribution (s)
tbvl	0.0	ne	SCR width modulation contribution (s)
tef0	0.0	ne	Storage time in neutral emitter (s)
gte	1.0	ne	Exponent factor for emitter transit time
thcs	0.0	ne	Saturation time at high current densities (s)
ahc	0.1	ne	Smoothing factor for current dependence
tr	0.0	ne	Storage time at inverse operation (s)
rci0	150	ne	Low-field collector resistance under emitter (Ohm)
vlim	0.5	ne	Voltage dividing ohmic and satur.region (V)
vpt	100	ne	Punch-through voltage (V)
vces	0.1	ne	Saturation voltage (V)
cjci0	1.0e-20	ne	Total zero-bias BC depletion capacitance (F)
vdci	0.7	ne	BC built-in voltage (V)
zci	0.333	ne	BC exponent factor
vptci	100	ne	Punch-through voltage of BC junction (V)
cjcx0	1.0e-20	ne	Zero-bias external BC depletion capacitance (F)
vdcx	0.7	ne	External BC built-in voltage (V)
zcx	0.333	ne	External BC exponent factor
vptcx	100	ne	Punch-through voltage (V)
fbc	1.0	ne	Split factor = Cjci0/Cjc0
rbi0	0.0	ne	Internal base resistance at zero-bias (Ohm)
vr0e	2.5	ne	forward Early voltage (normalization volt.) (V)
vr0c	1.0e6	ne	forward Early voltage (normalization volt.) (V)
fgeo	0.656	ne	Geometry factor
rbx	0.0	ne	External base series resistance (Ohm)
rcx	0.0	ne	Emitter series resistance (Ohm)
re	0.0	ne	External collector series resistance (Ohm)
itss	0.0	ne	Substrate transistor transfer saturation current (A)
msf	1.0	ne	Substrate transistor transfer current non-ideality factor
iscs	0.0	ne	SC saturation current (A)
msc	1.0	ne	SC non-ideality factor
cjs0	1.0e-20	ne	Zero-bias SC depletion capacitance (F)
vds	0.3	ne	SC built-in voltage (V)
zs	0.3	ne	External SC exponent factor
vpts	100	ne	SC punch-through voltage (V)
cbcpar	0.0	ne	Collector-base isolation (overlap) capacitance (F)
cbepar	0.0	ne	Emitter-base oxide capacitance (F)
eavl	0.0	ne	Exponent factor
kavl	0.0	ne	Prefactor
kf	0.0	ne	flicker noise coefficient (M^(1-AF))
af	2.0	ne	flicker noise exponent factor
vgb	1.2	ne	Bandgap-voltage (V)
vge	1.17	ne	Effective emitter bandgap-voltage (V)
vgc	1.17	ne	Effective collector bandgap-voltage (V)
vgs	1.17	ne	Effective substrate bandgap-voltage (V)
f1vg	-1.02377e-4	ne	Coefficient K1 in T-dependent bandgap equation (V/K)
f2vg	4.3215e-4	ne	Coefficient K2 in T-dependent bandgap equation (V/K)
alt0	0.0	ne	Frist-order TC of tf0 (1/K)
kt0	0.0	ne	Second-order TC of tf0 (1/K^2)
zetact	3.0	ne	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	ne	Exponent coefficient in BE junction current temperature dependence
zetaci	0.0	ne	TC of epi-collector diffusivity
alvs	0.0	ne	Relative TC of satur.drift velocity (1/K)
alces	0.0	ne	Relative TC of vces (1/K)
zetarbi	0.0	ne	TC of internal base resistance
zetarbx	0.0	ne	TC of external base resistance
zetarcx	0.0	ne	TC of external collector resistance
zetare	0.0	ne	TC of emitter resistances
zetaiqf	0.0	ne	TC of iqf
alkav	0.0	ne	TC of avalanche prefactor (1/K)
aleav	0.0	ne	TC of avalanche exponential factor (1/K)
zetarth	0.0	ne	Exponent factor for temperature dependent thermal resistance
flsh	0	ne	Flag for self-heating calculation
rth	0.0	ne	Thermal resistance (K/W)
cth	0.0	ne	Thermal capacitance (Ws/K)
tnom	27	ne	Temperature for which parameters are valid (C)
dt	0.0	ne	Temperature change for particular transistor (K)
Temp	27	ne	simulation temperature

Pnp Hicum L0 V1.2¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	pnp HICUM L0 v1.2
Popis	HICUM Level 0 v1.2 verilog device
Schematic entry	`hicumL0V1p2`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	pnpsub_therm
vlastnosti	94
Category	verilog-a devices

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Typ	pnp	ano	polarity [npn, pnp]
is	1.0e-16	ne	(Modified) saturation current (A)
mcf	1.00	ne	Non-ideality coefficient of forward collector current
mcr	1.00	ne	Non-ideality coefficient of reverse collector current
vef	1.0e6	ne	forward Early voltage (normalization volt.) (V)
ver	1.0e6	ne	reverse Early voltage (normalization volt.) (V)
iqf	1.0e6	ne	forward d.c. high-injection roll-off current (A)
fiqf	0	ne	flag for turning on base related critical current
iqr	1.0e6	ne	inverse d.c. high-injection roll-off current (A)
iqfh	1.0e6	ne	high-injection correction current (A)
tfh	0.0	ne	high-injection correction factor
ahq	0	ne	Smoothing factor for the d.c. injection width
ibes	1e-18	ne	BE saturation current (A)
mbe	1.0	ne	BE non-ideality factor
ires	0.0	ne	BE recombination saturation current (A)
mre	2.0	ne	BE recombination non-ideality factor
ibcs	0.0	ne	BC saturation current (A)
mbc	1.0	ne	BC non-ideality factor
cje0	1.0e-20	ne	Zero-bias BE depletion capacitance (F)
vde	0.9	ne	BE built-in voltage (V)
ze	0.5	ne	BE exponent factor
aje	2.5	ne	Ratio of maximum to zero-bias value
vdedc	0.9	ne	BE charge built-in voltage for d.c. transfer current (V)
zedc	0.5	ne	charge BE exponent factor for d.c. transfer current
ajedc	2.5	ne	BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current
t0	0.0	ne	low current transit time at Vbici=0 (s)
dt0h	0.0	ne	Base width modulation contribution (s)
tbvl	0.0	ne	SCR width modulation contribution (s)
tef0	0.0	ne	Storage time in neutral emitter (s)
gte	1.0	ne	Exponent factor for emitter transit time
thcs	0.0	ne	Saturation time at high current densities (s)
ahc	0.1	ne	Smoothing factor for current dependence
tr	0.0	ne	Storage time at inverse operation (s)
rci0	150	ne	Low-field collector resistance under emitter (Ohm)
vlim	0.5	ne	Voltage dividing ohmic and satur.region (V)
vpt	100	ne	Punch-through voltage (V)
vces	0.1	ne	Saturation voltage (V)
cjci0	1.0e-20	ne	Total zero-bias BC depletion capacitance (F)
vdci	0.7	ne	BC built-in voltage (V)
zci	0.333	ne	BC exponent factor
vptci	100	ne	Punch-through voltage of BC junction (V)
cjcx0	1.0e-20	ne	Zero-bias external BC depletion capacitance (F)
vdcx	0.7	ne	External BC built-in voltage (V)
zcx	0.333	ne	External BC exponent factor
vptcx	100	ne	Punch-through voltage (V)
fbc	1.0	ne	Split factor = Cjci0/Cjc0
rbi0	0.0	ne	Internal base resistance at zero-bias (Ohm)
vr0e	2.5	ne	forward Early voltage (normalization volt.) (V)
vr0c	1.0e6	ne	forward Early voltage (normalization volt.) (V)
fgeo	0.656	ne	Geometry factor
rbx	0.0	ne	External base series resistance (Ohm)
rcx	0.0	ne	Emitter series resistance (Ohm)
re	0.0	ne	External collector series resistance (Ohm)
itss	0.0	ne	Substrate transistor transfer saturation current (A)
msf	1.0	ne	Substrate transistor transfer current non-ideality factor
iscs	0.0	ne	SC saturation current (A)
msc	1.0	ne	SC non-ideality factor
cjs0	1.0e-20	ne	Zero-bias SC depletion capacitance (F)
vds	0.3	ne	SC built-in voltage (V)
zs	0.3	ne	External SC exponent factor
vpts	100	ne	SC punch-through voltage (V)
cbcpar	0.0	ne	Collector-base isolation (overlap) capacitance (F)
cbepar	0.0	ne	Emitter-base oxide capacitance (F)
eavl	0.0	ne	Exponent factor
kavl	0.0	ne	Prefactor
kf	0.0	ne	flicker noise coefficient (M^(1-AF))
af	2.0	ne	flicker noise exponent factor
vgb	1.2	ne	Bandgap-voltage (V)
vge	1.17	ne	Effective emitter bandgap-voltage (V)
vgc	1.17	ne	Effective collector bandgap-voltage (V)
vgs	1.17	ne	Effective substrate bandgap-voltage (V)
f1vg	-1.02377e-4	ne	Coefficient K1 in T-dependent bandgap equation (V/K)
f2vg	4.3215e-4	ne	Coefficient K2 in T-dependent bandgap equation (V/K)
alt0	0.0	ne	Frist-order TC of tf0 (1/K)
kt0	0.0	ne	Second-order TC of tf0 (1/K^2)
zetact	3.0	ne	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	ne	Exponent coefficient in BE junction current temperature dependence
zetaci	0.0	ne	TC of epi-collector diffusivity
alvs	0.0	ne	Relative TC of satur.drift velocity (1/K)
alces	0.0	ne	Relative TC of vces (1/K)
zetarbi	0.0	ne	TC of internal base resistance
zetarbx	0.0	ne	TC of external base resistance
zetarcx	0.0	ne	TC of external collector resistance
zetare	0.0	ne	TC of emitter resistances
zetaiqf	0.0	ne	TC of iqf
alkav	0.0	ne	TC of avalanche prefactor (1/K)
aleav	0.0	ne	TC of avalanche exponential factor (1/K)
zetarth	0.0	ne	Exponent factor for temperature dependent thermal resistance
flsh	0	ne	Flag for self-heating calculation
rth	0.0	ne	Thermal resistance (K/W)
cth	0.0	ne	Thermal capacitance (Ws/K)
tnom	27	ne	Temperature for which parameters are valid (C)
dt	0.0	ne	Temperature change for particular transistor (K)
Temp	27	ne	simulation temperature

Npn Hicum L0 V1.2G¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	npn HICUM L0 v1.2g
Popis	HICUM Level 0 v1.2g verilog device
Schematic entry	`hicumL0V1p2g`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	npnsub_therm
vlastnosti	99
Category	verilog-a devices

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Typ	npn	ano	polarity [npn, pnp]
is	1.0e-16	ne	(Modified) saturation current (A)
mcf	1.00	ne	Non-ideality coefficient of forward collector current
mcr	1.00	ne	Non-ideality coefficient of reverse collector current
vef	1.0e6	ne	forward Early voltage (normalization volt.) (V)
ver	1.0e6	ne	reverse Early voltage (normalization volt.) (V)
iqf	1.0e6	ne	forward d.c. high-injection roll-off current (A)
fiqf	0	ne	flag for turning on base related critical current
iqr	1.0e6	ne	inverse d.c. high-injection roll-off current (A)
iqfh	1.0e6	ne	high-injection correction current (A)
iqfe	0.0	ne	high-injection roll-off current
ahq	0.0	ne	Smoothing factor for the d.c. injection width
ibes	1e-18	ne	BE saturation current (A)
mbe	1.0	ne	BE non-ideality factor
ires	0.0	ne	BE recombination saturation current (A)
mre	2.0	ne	BE recombination non-ideality factor
ibcs	0.0	ne	BC saturation current (A)
mbc	1.0	ne	BC non-ideality factor
cje0	1.0e-20	ne	Zero-bias BE depletion capacitance (F)
vde	0.9	ne	BE built-in voltage (V)
ze	0.5	ne	BE exponent factor
aje	2.5	ne	Ratio of maximum to zero-bias value
vdedc	0.9	ne	BE charge built-in voltage for d.c. transfer current (V)
zedc	0.5	ne	charge BE exponent factor for d.c. transfer current
ajedc	2.5	ne	BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current
t0	0.0	ne	low current transit time at Vbici=0 (s)
dt0h	0.0	ne	Base width modulation contribution (s)
tbvl	0.0	ne	SCR width modulation contribution (s)
tef0	0.0	ne	Storage time in neutral emitter (s)
gte	1.0	ne	Exponent factor for emitter transit time
thcs	0.0	ne	Saturation time at high current densities (s)
ahc	0.1	ne	Smoothing factor for current dependence
tr	0.0	ne	Storage time at inverse operation (s)
rci0	150	ne	Low-field collector resistance under emitter (Ohm)
vlim	0.5	ne	Voltage dividing ohmic and satur.region (V)
vpt	100.0	ne	Punch-through voltage (V)
vces	0.1	ne	Saturation voltage (V)
cjci0	1.0e-20	ne	Total zero-bias BC depletion capacitance (F)
vdci	0.7	ne	BC built-in voltage (V)
zci	0.333	ne	BC exponent factor
vptci	100.0	ne	Punch-through voltage of BC junction (V)
cjcx0	1.0e-20	ne	Zero-bias external BC depletion capacitance (F)
vdcx	0.7	ne	External BC built-in voltage (V)
zcx	0.333	ne	External BC exponent factor
vptcx	100.0	ne	Punch-through voltage (V)
fbc	1.0	ne	Split factor = Cjci0/Cjc0
rbi0	0.0	ne	Internal base resistance at zero-bias (Ohm)
vr0e	2.5	ne	forward Early voltage (normalization volt.) (V)
vr0c	1.0e6	ne	forward Early voltage (normalization volt.) (V)
fgeo	0.656	ne	Geometry factor
rbx	0.0	ne	External base series resistance (Ohm)
rcx	0.0	ne	Emitter series resistance (Ohm)
re	0.0	ne	External collector series resistance (Ohm)
itss	0.0	ne	Substrate transistor transfer saturation current (A)
msf	1.0	ne	Substrate transistor transfer current non-ideality factor
iscs	0.0	ne	SC saturation current (A)
msc	1.0	ne	SC non-ideality factor
cjs0	1.0e-20	ne	Zero-bias SC depletion capacitance (F)
vds	0.3	ne	SC built-in voltage (V)
zs	0.3	ne	External SC exponent factor
vpts	100.0	ne	SC punch-through voltage (V)
cbcpar	0.0	ne	Collector-base isolation (overlap) capacitance (F)
cbepar	0.0	ne	Emitter-base oxide capacitance (F)
eavl	0.0	ne	Exponent factor
kavl	0.0	ne	Prefactor
kf	0.0	ne	flicker noise coefficient (M^(1-AF))
af	2.0	ne	flicker noise exponent factor
vgb	1.2	ne	Bandgap-voltage (V)
vge	1.17	ne	Effective emitter bandgap-voltage (V)
vgc	1.17	ne	Effective collector bandgap-voltage (V)
vgs	1.17	ne	Effective substrate bandgap-voltage (V)
f1vg	-1.02377e-4	ne	Coefficient K1 in T-dependent bandgap equation (V/K)
f2vg	4.3215e-4	ne	Coefficient K2 in T-dependent bandgap equation (V/K)
alt0	0.0	ne	Frist-order TC of tf0 (1/K)
kt0	0.0	ne	Second-order TC of tf0 (1/K^2)
zetact	3.0	ne	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	ne	Exponent coefficient in BE junction current temperature dependence
zetaci	0.0	ne	TC of epi-collector diffusivity
alvs	0.0	ne	Relative TC of satur.drift velocity (1/K)
alces	0.0	ne	Relative TC of vces (1/K)
zetarbi	0.0	ne	TC of internal base resistance
zetarbx	0.0	ne	TC of external base resistance
zetarcx	0.0	ne	TC of external collector resistance
zetare	0.0	ne	TC of emitter resistances
zetaiqf	0.0	ne	TC of iqf (bandgap coefficient of zero bias hole charge)
alkav	0.0	ne	TC of avalanche prefactor, identical to alfav of Hicum/L2 (1/K)
aleav	0.0	ne	TC of avalanche exponential factor, identical to alqav of Hicum/L2 (1/K)
flsh	0	ne	Flag for self-heating calculation
rth	0.0	ne	Thermal resistance (K/W)
zetarth	0.0	ne	Exponent factor for temperature dependent thermal resistance
cth	0.0	ne	Thermal capacitance (Ws/K)
tnom	27	ne	Temperature for which parameters are valid (C)
dt	0.0	ne	Temperature change for particular transistor (K)
delte	0.0	ne	Emitter part coefficient of the zero bias hole charge temperature variation
deltc	0.0	ne	Collector part coefficient of the zero bias hole charge temperature variation
zetaver	0.0	ne	Bandgap TC parameter of ver
zetavef	0.0	ne	Bandgap TC parameter of vef
ibhrec	0.0	ne	Specific recombination current at the BC barrier for high forward injection (A)
Temp	27	ne	simulation temperature

Pnp Hicum L0 V1.2G¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	pnp HICUM L0 v1.2g
Popis	HICUM Level 0 v1.2g verilog device
Schematic entry	`hicumL0V1p2g`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	pnpsub_therm
vlastnosti	99
Category	verilog-a devices

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Typ	pnp	ano	polarity [npn, pnp]
is	1.0e-16	ne	(Modified) saturation current (A)
mcf	1.00	ne	Non-ideality coefficient of forward collector current
mcr	1.00	ne	Non-ideality coefficient of reverse collector current
vef	1.0e6	ne	forward Early voltage (normalization volt.) (V)
ver	1.0e6	ne	reverse Early voltage (normalization volt.) (V)
iqf	1.0e6	ne	forward d.c. high-injection roll-off current (A)
fiqf	0	ne	flag for turning on base related critical current
iqr	1.0e6	ne	inverse d.c. high-injection roll-off current (A)
iqfh	1.0e6	ne	high-injection correction current (A)
iqfe	0.0	ne	high-injection roll-off current
ahq	0.0	ne	Smoothing factor for the d.c. injection width
ibes	1e-18	ne	BE saturation current (A)
mbe	1.0	ne	BE non-ideality factor
ires	0.0	ne	BE recombination saturation current (A)
mre	2.0	ne	BE recombination non-ideality factor
ibcs	0.0	ne	BC saturation current (A)
mbc	1.0	ne	BC non-ideality factor
cje0	1.0e-20	ne	Zero-bias BE depletion capacitance (F)
vde	0.9	ne	BE built-in voltage (V)
ze	0.5	ne	BE exponent factor
aje	2.5	ne	Ratio of maximum to zero-bias value
vdedc	0.9	ne	BE charge built-in voltage for d.c. transfer current (V)
zedc	0.5	ne	charge BE exponent factor for d.c. transfer current
ajedc	2.5	ne	BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current
t0	0.0	ne	low current transit time at Vbici=0 (s)
dt0h	0.0	ne	Base width modulation contribution (s)
tbvl	0.0	ne	SCR width modulation contribution (s)
tef0	0.0	ne	Storage time in neutral emitter (s)
gte	1.0	ne	Exponent factor for emitter transit time
thcs	0.0	ne	Saturation time at high current densities (s)
ahc	0.1	ne	Smoothing factor for current dependence
tr	0.0	ne	Storage time at inverse operation (s)
rci0	150	ne	Low-field collector resistance under emitter (Ohm)
vlim	0.5	ne	Voltage dividing ohmic and satur.region (V)
vpt	100.0	ne	Punch-through voltage (V)
vces	0.1	ne	Saturation voltage (V)
cjci0	1.0e-20	ne	Total zero-bias BC depletion capacitance (F)
vdci	0.7	ne	BC built-in voltage (V)
zci	0.333	ne	BC exponent factor
vptci	100.0	ne	Punch-through voltage of BC junction (V)
cjcx0	1.0e-20	ne	Zero-bias external BC depletion capacitance (F)
vdcx	0.7	ne	External BC built-in voltage (V)
zcx	0.333	ne	External BC exponent factor
vptcx	100.0	ne	Punch-through voltage (V)
fbc	1.0	ne	Split factor = Cjci0/Cjc0
rbi0	0.0	ne	Internal base resistance at zero-bias (Ohm)
vr0e	2.5	ne	forward Early voltage (normalization volt.) (V)
vr0c	1.0e6	ne	forward Early voltage (normalization volt.) (V)
fgeo	0.656	ne	Geometry factor
rbx	0.0	ne	External base series resistance (Ohm)
rcx	0.0	ne	Emitter series resistance (Ohm)
re	0.0	ne	External collector series resistance (Ohm)
itss	0.0	ne	Substrate transistor transfer saturation current (A)
msf	1.0	ne	Substrate transistor transfer current non-ideality factor
iscs	0.0	ne	SC saturation current (A)
msc	1.0	ne	SC non-ideality factor
cjs0	1.0e-20	ne	Zero-bias SC depletion capacitance (F)
vds	0.3	ne	SC built-in voltage (V)
zs	0.3	ne	External SC exponent factor
vpts	100.0	ne	SC punch-through voltage (V)
cbcpar	0.0	ne	Collector-base isolation (overlap) capacitance (F)
cbepar	0.0	ne	Emitter-base oxide capacitance (F)
eavl	0.0	ne	Exponent factor
kavl	0.0	ne	Prefactor
kf	0.0	ne	flicker noise coefficient (M^(1-AF))
af	2.0	ne	flicker noise exponent factor
vgb	1.2	ne	Bandgap-voltage (V)
vge	1.17	ne	Effective emitter bandgap-voltage (V)
vgc	1.17	ne	Effective collector bandgap-voltage (V)
vgs	1.17	ne	Effective substrate bandgap-voltage (V)
f1vg	-1.02377e-4	ne	Coefficient K1 in T-dependent bandgap equation (V/K)
f2vg	4.3215e-4	ne	Coefficient K2 in T-dependent bandgap equation (V/K)
alt0	0.0	ne	Frist-order TC of tf0 (1/K)
kt0	0.0	ne	Second-order TC of tf0 (1/K^2)
zetact	3.0	ne	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	ne	Exponent coefficient in BE junction current temperature dependence
zetaci	0.0	ne	TC of epi-collector diffusivity
alvs	0.0	ne	Relative TC of satur.drift velocity (1/K)
alces	0.0	ne	Relative TC of vces (1/K)
zetarbi	0.0	ne	TC of internal base resistance
zetarbx	0.0	ne	TC of external base resistance
zetarcx	0.0	ne	TC of external collector resistance
zetare	0.0	ne	TC of emitter resistances
zetaiqf	0.0	ne	TC of iqf (bandgap coefficient of zero bias hole charge)
alkav	0.0	ne	TC of avalanche prefactor, identical to alfav of Hicum/L2 (1/K)
aleav	0.0	ne	TC of avalanche exponential factor, identical to alqav of Hicum/L2 (1/K)
flsh	0	ne	Flag for self-heating calculation
rth	0.0	ne	Thermal resistance (K/W)
zetarth	0.0	ne	Exponent factor for temperature dependent thermal resistance
cth	0.0	ne	Thermal capacitance (Ws/K)
tnom	27	ne	Temperature for which parameters are valid (C)
dt	0.0	ne	Temperature change for particular transistor (K)
delte	0.0	ne	Emitter part coefficient of the zero bias hole charge temperature variation
deltc	0.0	ne	Collector part coefficient of the zero bias hole charge temperature variation
zetaver	0.0	ne	Bandgap TC parameter of ver
zetavef	0.0	ne	Bandgap TC parameter of vef
ibhrec	0.0	ne	Specific recombination current at the BC barrier for high forward injection (A)
Temp	27	ne	simulation temperature

Npn Hicum L0 V1.3¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	npn HICUM L0 v1.3
Popis	HICUM Level 0 v1.3 verilog device
Schematic entry	`hicumL0V1p3`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	pnpsub_therm
vlastnosti	102
Category	verilog-a devices

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Typ	npn	ano	polarity [npn, pnp]
is	1.0e-16	ne	(Modified) saturation current (A)
it_mod	0	ne	Flag for using third order solution for transfer current
mcf	1.00	ne	Non-ideality coefficient of forward collector current
mcr	1.00	ne	Non-ideality coefficient of reverse collector current
vef	1.0e6	ne	forward Early voltage (normalization volt.) (V)
ver	1.0e6	ne	reverse Early voltage (normalization volt.) (V)
aver	0.0	ne	bias dependence for reverse Early voltage
iqf	1.0e6	ne	forward d.c. high-injection roll-off current (A)
fiqf	0	ne	flag for turning on base related critical current
iqr	1.0e6	ne	inverse d.c. high-injection roll-off current (A)
iqfh	1.0e6	ne	high-injection correction current (A)
tfh	0.0	ne	high-injection correction factor
ahq	0	ne	Smoothing factor for the d.c. injection width
ibes	1e-18	ne	BE saturation current (A)
mbe	1.0	ne	BE non-ideality factor
ires	0.0	ne	BE recombination saturation current (A)
mre	2.0	ne	BE recombination non-ideality factor
ibcs	0.0	ne	BC saturation current (A)
mbc	1.0	ne	BC non-ideality factor
cje0	1.0e-20	ne	Zero-bias BE depletion capacitance (F)
vde	0.9	ne	BE built-in voltage (V)
ze	0.5	ne	BE exponent factor
aje	2.5	ne	Ratio of maximum to zero-bias value
vdedc	0.9	ne	BE charge built-in voltage for d.c. transfer current (V)
zedc	0.5	ne	charge BE exponent factor for d.c. transfer current
ajedc	2.5	ne	BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current
t0	0.0	ne	low current transit time at Vbici=0 (s)
dt0h	0.0	ne	Base width modulation contribution (s)
tbvl	0.0	ne	SCR width modulation contribution (s)
tef0	0.0	ne	Storage time in neutral emitter (s)
gte	1.0	ne	Exponent factor for emitter transit time
thcs	0.0	ne	Saturation time at high current densities (s)
ahc	0.1	ne	Smoothing factor for current dependence
tr	0.0	ne	Storage time at inverse operation (s)
rci0	150	ne	Low-field collector resistance under emitter (Ohm)
vlim	0.5	ne	Voltage dividing ohmic and satur.region (V)
vpt	100	ne	Punch-through voltage (V)
vces	0.1	ne	Saturation voltage (V)
cjci0	1.0e-20	ne	Total zero-bias BC depletion capacitance (F)
vdci	0.7	ne	BC built-in voltage (V)
zci	0.333	ne	BC exponent factor
vptci	100	ne	Punch-through voltage of BC junction (V)
cjcx0	1.0e-20	ne	Zero-bias external BC depletion capacitance (F)
vdcx	0.7	ne	External BC built-in voltage (V)
zcx	0.333	ne	External BC exponent factor
vptcx	100	ne	Punch-through voltage (V)
fbc	1.0	ne	Split factor = Cjci0/Cjc0
rbi0	0.0	ne	Internal base resistance at zero-bias (Ohm)
vr0e	2.5	ne	forward Early voltage (normalization volt.) (V)
vr0c	1.0e6	ne	forward Early voltage (normalization volt.) (V)
fgeo	0.656	ne	Geometry factor
rbx	0.0	ne	External base series resistance (Ohm)
rcx	0.0	ne	Emitter series resistance (Ohm)
re	0.0	ne	External collector series resistance (Ohm)
itss	0.0	ne	Substrate transistor transfer saturation current (A)
msf	1.0	ne	Substrate transistor transfer current non-ideality factor
iscs	0.0	ne	SC saturation current (A)
msc	1.0	ne	SC non-ideality factor
cjs0	1.0e-20	ne	Zero-bias SC depletion capacitance (F)
vds	0.3	ne	SC built-in voltage (V)
zs	0.3	ne	External SC exponent factor
vpts	100	ne	SC punch-through voltage (V)
cbcpar	0.0	ne	Collector-base isolation (overlap) capacitance (F)
cbepar	0.0	ne	Emitter-base oxide capacitance (F)
eavl	0.0	ne	Exponent factor
kavl	0.0	ne	Prefactor
kf	0.0	ne	flicker noise coefficient (M^(1-AF))
af	2.0	ne	flicker noise exponent factor
vgb	1.2	ne	Bandgap-voltage (V)
vge	1.17	ne	Effective emitter bandgap-voltage (V)
vgc	1.17	ne	Effective collector bandgap-voltage (V)
vgs	1.17	ne	Effective substrate bandgap-voltage (V)
f1vg	-1.02377e-4	ne	Coefficient K1 in T-dependent bandgap equation (V/K)
f2vg	4.3215e-4	ne	Coefficient K2 in T-dependent bandgap equation (V/K)
alt0	0.0	ne	Frist-order TC of tf0 (1/K)
kt0	0.0	ne	Second-order TC of tf0 (1/K^2)
zetact	3.0	ne	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	ne	Exponent coefficient in BE junction current temperature dependence
zetaci	0.0	ne	TC of epi-collector diffusivity
alvs	0.0	ne	Relative TC of satur.drift velocity (1/K)
alces	0.0	ne	Relative TC of vces (1/K)
zetarbi	0.0	ne	TC of internal base resistance
zetarbx	0.0	ne	TC of external base resistance
zetarcx	0.0	ne	TC of external collector resistance
zetare	0.0	ne	TC of emitter resistances
zetaiqf	0.0	ne	TC of iqf
alkav	0.0	ne	TC of avalanche prefactor (1/K)
aleav	0.0	ne	TC of avalanche exponential factor (1/K)
zetarth	0.0	ne	Exponent factor for temperature dependent thermal resistance
tef_temp	1	ne	Flag for turning temperature dependence of tef0 on and off
zetaver	-1.0	ne	TC of Reverse Early voltage
zetavgbe	1.0	ne	TC of AVER
dvgbe	0.0	ne	Bandgap difference between base and BE-junction
aliqfh	0	ne	Frist-order TC of iqfh (1/K)
kiqfh	0	ne	Second-order TC of iqfh (1/K^2)
flsh	0	ne	Flag for self-heating calculation
rth	0.0	ne	Thermal resistance (K/W)
cth	0.0	ne	Thermal capacitance (Ws/K)
tnom	27	ne	Temperature for which parameters are valid (C)
dt	0.0	ne	Temperature change for particular transistor (K)
Temp	27	ne	simulation temperature

Pnp Hicum L0 V1.3¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	pnp HICUM L0 v1.3
Popis	HICUM Level 0 v1.3 verilog device
Schematic entry	`hicumL0V1p3`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	pnpsub_therm
vlastnosti	102
Category	verilog-a devices

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Typ	pnp	ano	polarity [npn, pnp]
is	1.0e-16	ne	(Modified) saturation current (A)
it_mod	0	ne	Flag for using third order solution for transfer current
mcf	1.00	ne	Non-ideality coefficient of forward collector current
mcr	1.00	ne	Non-ideality coefficient of reverse collector current
vef	1.0e6	ne	forward Early voltage (normalization volt.) (V)
ver	1.0e6	ne	reverse Early voltage (normalization volt.) (V)
aver	0.0	ne	bias dependence for reverse Early voltage
iqf	1.0e6	ne	forward d.c. high-injection roll-off current (A)
fiqf	0	ne	flag for turning on base related critical current
iqr	1.0e6	ne	inverse d.c. high-injection roll-off current (A)
iqfh	1.0e6	ne	high-injection correction current (A)
tfh	0.0	ne	high-injection correction factor
ahq	0	ne	Smoothing factor for the d.c. injection width
ibes	1e-18	ne	BE saturation current (A)
mbe	1.0	ne	BE non-ideality factor
ires	0.0	ne	BE recombination saturation current (A)
mre	2.0	ne	BE recombination non-ideality factor
ibcs	0.0	ne	BC saturation current (A)
mbc	1.0	ne	BC non-ideality factor
cje0	1.0e-20	ne	Zero-bias BE depletion capacitance (F)
vde	0.9	ne	BE built-in voltage (V)
ze	0.5	ne	BE exponent factor
aje	2.5	ne	Ratio of maximum to zero-bias value
vdedc	0.9	ne	BE charge built-in voltage for d.c. transfer current (V)
zedc	0.5	ne	charge BE exponent factor for d.c. transfer current
ajedc	2.5	ne	BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current
t0	0.0	ne	low current transit time at Vbici=0 (s)
dt0h	0.0	ne	Base width modulation contribution (s)
tbvl	0.0	ne	SCR width modulation contribution (s)
tef0	0.0	ne	Storage time in neutral emitter (s)
gte	1.0	ne	Exponent factor for emitter transit time
thcs	0.0	ne	Saturation time at high current densities (s)
ahc	0.1	ne	Smoothing factor for current dependence
tr	0.0	ne	Storage time at inverse operation (s)
rci0	150	ne	Low-field collector resistance under emitter (Ohm)
vlim	0.5	ne	Voltage dividing ohmic and satur.region (V)
vpt	100	ne	Punch-through voltage (V)
vces	0.1	ne	Saturation voltage (V)
cjci0	1.0e-20	ne	Total zero-bias BC depletion capacitance (F)
vdci	0.7	ne	BC built-in voltage (V)
zci	0.333	ne	BC exponent factor
vptci	100	ne	Punch-through voltage of BC junction (V)
cjcx0	1.0e-20	ne	Zero-bias external BC depletion capacitance (F)
vdcx	0.7	ne	External BC built-in voltage (V)
zcx	0.333	ne	External BC exponent factor
vptcx	100	ne	Punch-through voltage (V)
fbc	1.0	ne	Split factor = Cjci0/Cjc0
rbi0	0.0	ne	Internal base resistance at zero-bias (Ohm)
vr0e	2.5	ne	forward Early voltage (normalization volt.) (V)
vr0c	1.0e6	ne	forward Early voltage (normalization volt.) (V)
fgeo	0.656	ne	Geometry factor
rbx	0.0	ne	External base series resistance (Ohm)
rcx	0.0	ne	Emitter series resistance (Ohm)
re	0.0	ne	External collector series resistance (Ohm)
itss	0.0	ne	Substrate transistor transfer saturation current (A)
msf	1.0	ne	Substrate transistor transfer current non-ideality factor
iscs	0.0	ne	SC saturation current (A)
msc	1.0	ne	SC non-ideality factor
cjs0	1.0e-20	ne	Zero-bias SC depletion capacitance (F)
vds	0.3	ne	SC built-in voltage (V)
zs	0.3	ne	External SC exponent factor
vpts	100	ne	SC punch-through voltage (V)
cbcpar	0.0	ne	Collector-base isolation (overlap) capacitance (F)
cbepar	0.0	ne	Emitter-base oxide capacitance (F)
eavl	0.0	ne	Exponent factor
kavl	0.0	ne	Prefactor
kf	0.0	ne	flicker noise coefficient (M^(1-AF))
af	2.0	ne	flicker noise exponent factor
vgb	1.2	ne	Bandgap-voltage (V)
vge	1.17	ne	Effective emitter bandgap-voltage (V)
vgc	1.17	ne	Effective collector bandgap-voltage (V)
vgs	1.17	ne	Effective substrate bandgap-voltage (V)
f1vg	-1.02377e-4	ne	Coefficient K1 in T-dependent bandgap equation (V/K)
f2vg	4.3215e-4	ne	Coefficient K2 in T-dependent bandgap equation (V/K)
alt0	0.0	ne	Frist-order TC of tf0 (1/K)
kt0	0.0	ne	Second-order TC of tf0 (1/K^2)
zetact	3.0	ne	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	ne	Exponent coefficient in BE junction current temperature dependence
zetaci	0.0	ne	TC of epi-collector diffusivity
alvs	0.0	ne	Relative TC of satur.drift velocity (1/K)
alces	0.0	ne	Relative TC of vces (1/K)
zetarbi	0.0	ne	TC of internal base resistance
zetarbx	0.0	ne	TC of external base resistance
zetarcx	0.0	ne	TC of external collector resistance
zetare	0.0	ne	TC of emitter resistances
zetaiqf	0.0	ne	TC of iqf
alkav	0.0	ne	TC of avalanche prefactor (1/K)
aleav	0.0	ne	TC of avalanche exponential factor (1/K)
zetarth	0.0	ne	Exponent factor for temperature dependent thermal resistance
tef_temp	1	ne	Flag for turning temperature dependence of tef0 on and off
zetaver	-1.0	ne	TC of Reverse Early voltage
zetavgbe	1.0	ne	TC of AVER
dvgbe	0.0	ne	Bandgap difference between base and BE-junction
aliqfh	0	ne	Frist-order TC of iqfh (1/K)
kiqfh	0	ne	Second-order TC of iqfh (1/K^2)
flsh	0	ne	Flag for self-heating calculation
rth	0.0	ne	Thermal resistance (K/W)
cth	0.0	ne	Thermal capacitance (Ws/K)
tnom	27	ne	Temperature for which parameters are valid (C)
dt	0.0	ne	Temperature change for particular transistor (K)
Temp	27	ne	simulation temperature

Hicum L2 V2.23¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	HICUM L2 v2.23
Popis	HICUM Level 2 v2.23 verilog device
Schematic entry	`hicumL2V2p23`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	npnsub_therm
vlastnosti	114
Category	verilog-a devices

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
c10	2.0E-30	ne	GICCR constant (A^2s)
qp0	2.0E-14	ne	Zero-bias hole charge (Coul)
ich	0.0	ne	High-current correction for 2D and 3D effects (A)
hfe	1.0	ne	Emitter minority charge weighting factor in HBTs
hfc	1.0	ne	Collector minority charge weighting factor in HBTs
hjei	1.0	ne	B-E depletion charge weighting factor in HBTs
hjci	1.0	ne	B-C depletion charge weighting factor in HBTs
ibeis	1.0E-18	ne	Internal B-E saturation current (A)
mbei	1.0	ne	Internal B-E current ideality factor
ireis	0.0	ne	Internal B-E recombination saturation current (A)
mrei	2.0	ne	Internal B-E recombination current ideality factor
ibeps	0.0	ne	Peripheral B-E saturation current (A)
mbep	1.0	ne	Peripheral B-E current ideality factor
ireps	0.0	ne	Peripheral B-E recombination saturation current (A)
mrep	2.0	ne	Peripheral B-E recombination current ideality factor
mcf	1.0	ne	Non-ideality factor for III-V HBTs
tbhrec	0.0	ne	Base current recombination time constant at B-C barrier for high forward injection (s)
ibcis	1.0E-16	ne	Internal B-C saturation current (A)
mbci	1.0	ne	Internal B-C current ideality factor
ibcxs	0.0	ne	External B-C saturation current (A)
mbcx	1.0	ne	External B-C current ideality factor
ibets	0.0	ne	B-E tunneling saturation current (A)
abet	40	ne	Exponent factor for tunneling current
tunode	1	ne	Specifies the base node connection for the tunneling current
favl	0.0	ne	Avalanche current factor (1/V)
qavl	0.0	ne	Exponent factor for avalanche current (Coul)
alfav	0.0	ne	Relative TC for FAVL (1/K)
alqav	0.0	ne	Relative TC for QAVL (1/K)
rbi0	0.0	ne	Zero bias internal base resistance (Ohm)
rbx	0.0	ne	External base series resistance (Ohm)
fgeo	0.6557	ne	Factor for geometry dependence of emitter current crowding
fdqr0	0.0	ne	Correction factor for modulation by B-E and B-C space charge layer
fcrbi	0.0	ne	Ratio of HF shunt to total internal capacitance (lateral NQS effect)
fqi	1.0	ne	Ration of internal to total minority charge
re	0.0	ne	Emitter series resistance (Ohm)
rcx	0.0	ne	External collector series resistance (Ohm)
itss	0.0	ne	Substrate transistor transfer saturation current (A)
msf	1.0	ne	Forward ideality factor of substrate transfer current
iscs	0.0	ne	C-S diode saturation current (A)
msc	1.0	ne	Ideality factor of C-S diode current
tsf	0.0	ne	Transit time for forward operation of substrate transistor (s)
rsu	0.0	ne	Substrate series resistance (Ohm)
csu	0.0	ne	Substrate shunt capacitance (F)
cjei0	1.0E-20	ne	Internal B-E zero-bias depletion capacitance (F)
vdei	0.9	ne	Internal B-E built-in potential (V)
zei	0.5	ne	Internal B-E grading coefficient
ajei	2.5	ne	Ratio of maximum to zero-bias value of internal B-E capacitance
cjep0	1.0E-20	ne	Peripheral B-E zero-bias depletion capacitance (F)
vdep	0.9	ne	Peripheral B-E built-in potential (V)
zep	0.5	ne	Peripheral B-E grading coefficient
ajep	2.5	ne	Ratio of maximum to zero-bias value of peripheral B-E capacitance
cjci0	1.0E-20	ne	Internal B-C zero-bias depletion capacitance (F)
vdci	0.7	ne	Internal B-C built-in potential (V)
zci	0.4	ne	Internal B-C grading coefficient
vptci	100	ne	Internal B-C punch-through voltage (V)
cjcx0	1.0E-20	ne	External B-C zero-bias depletion capacitance (F)
vdcx	0.7	ne	External B-C built-in potential (V)
zcx	0.4	ne	External B-C grading coefficient
vptcx	100	ne	External B-C punch-through voltage (V)
fbcpar	0.0	ne	Partitioning factor of parasitic B-C cap
fbepar	1.0	ne	Partitioning factor of parasitic B-E cap
cjs0	0.0	ne	C-S zero-bias depletion capacitance (F)
vds	0.6	ne	C-S built-in potential (V)
zs	0.5	ne	C-S grading coefficient
vpts	100	ne	C-S punch-through voltage (V)
t0	0.0	ne	Low current forward transit time at VBC=0V (s)
dt0h	0.0	ne	Time constant for base and B-C space charge layer width modulation (s)
tbvl	0.0	ne	Time constant for modelling carrier jam at low VCE (s)
tef0	0.0	ne	Neutral emitter storage time (s)
gtfe	1.0	ne	Exponent factor for current dependence of neutral emitter storage time
thcs	0.0	ne	Saturation time constant at high current densities (s)
ahc	0.1	ne	Smoothing factor for current dependence of base and collector transit time
fthc	0.0	ne	Partitioning factor for base and collector portion
rci0	150	ne	Internal collector resistance at low electric field (Ohm)
vlim	0.5	ne	Voltage separating ohmic and saturation velocity regime (V)
vces	0.1	ne	Internal C-E saturation voltage (V)
vpt	0.0	ne	Collector punch-through voltage (V)
tr	0.0	ne	Storage time for inverse operation (s)
cbepar	0.0	ne	Total parasitic B-E capacitance (F)
cbcpar	0.0	ne	Total parasitic B-C capacitance (F)
alqf	0.0	ne	Factor for additional delay time of minority charge
alit	0.0	ne	Factor for additional delay time of transfer current
flnqs	0	ne	Flag for turning on and off of vertical NQS effect
kf	0.0	ne	Flicker noise coefficient
af	2.0	ne	Flicker noise exponent factor
cfbe	-1	ne	Flag for determining where to tag the flicker noise source
latb	0.0	ne	Scaling factor for collector minority charge in direction of emitter width
latl	0.0	ne	Scaling factor for collector minority charge in direction of emitter length
vgb	1.17	ne	Bandgap voltage extrapolated to 0 K (V)
alt0	0.0	ne	First order relative TC of parameter T0 (1/K)
kt0	0.0	ne	Second order relative TC of parameter T0
zetaci	0.0	ne	Temperature exponent for RCI0
alvs	0.0	ne	Relative TC of saturation drift velocity (1/K)
alces	0.0	ne	Relative TC of VCES (1/K)
zetarbi	0.0	ne	Temperature exponent of internal base resistance
zetarbx	0.0	ne	Temperature exponent of external base resistance
zetarcx	0.0	ne	Temperature exponent of external collector resistance
zetare	0.0	ne	Temperature exponent of emitter resistance
zetacx	1.0	ne	Temperature exponent of mobility in substrate transistor transit time
vge	1.17	ne	Effective emitter bandgap voltage (V)
vgc	1.17	ne	Effective collector bandgap voltage (V)
vgs	1.17	ne	Effective substrate bandgap voltage (V)
f1vg	-1.02377e-4	ne	Coefficient K1 in T-dependent band-gap equation
f2vg	4.3215e-4	ne	Coefficient K2 in T-dependent band-gap equation
zetact	3.0	ne	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	ne	Exponent coefficient in B-E junction current temperature dependence
alb	0.0	ne	Relative TC of forward current gain for V2.1 model (1/K)
flsh	0	ne	Flag for turning on and off self-heating effect
rth	0.0	ne	Thermal resistance (K/W)
cth	0.0	ne	Thermal capacitance (J/W)
flcomp	0.0	ne	Flag for compatibility with v2.1 model (0=v2.1)
tnom	27.0	ne	Temperature at which parameters are specified (C)
dt	0.0	ne	Temperature change w.r.t. chip temperature for particular transistor (K)
Temp	27	ne	simulation temperature

Hicum L2 V2.24¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	HICUM L2 v2.24
Popis	HICUM Level 2 v2.24 verilog device
Schematic entry	`hicumL2V2p24`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	npnsub_therm
vlastnosti	114
Category	verilog-a devices

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
c10	2.0E-30	ne	GICCR constant (A^2s)
qp0	2.0E-14	ne	Zero-bias hole charge (Coul)
ich	0.0	ne	High-current correction for 2D and 3D effects (A)
hfe	1.0	ne	Emitter minority charge weighting factor in HBTs
hfc	1.0	ne	Collector minority charge weighting factor in HBTs
hjei	1.0	ne	B-E depletion charge weighting factor in HBTs
hjci	1.0	ne	B-C depletion charge weighting factor in HBTs
ibeis	1.0E-18	ne	Internal B-E saturation current (A)
mbei	1.0	ne	Internal B-E current ideality factor
ireis	0.0	ne	Internal B-E recombination saturation current (A)
mrei	2.0	ne	Internal B-E recombination current ideality factor
ibeps	0.0	ne	Peripheral B-E saturation current (A)
mbep	1.0	ne	Peripheral B-E current ideality factor
ireps	0.0	ne	Peripheral B-E recombination saturation current (A)
mrep	2.0	ne	Peripheral B-E recombination current ideality factor
mcf	1.0	ne	Non-ideality factor for III-V HBTs
tbhrec	0.0	ne	Base current recombination time constant at B-C barrier for high forward injection (s)
ibcis	1.0E-16	ne	Internal B-C saturation current (A)
mbci	1.0	ne	Internal B-C current ideality factor
ibcxs	0.0	ne	External B-C saturation current (A)
mbcx	1.0	ne	External B-C current ideality factor
ibets	0.0	ne	B-E tunneling saturation current (A)
abet	40	ne	Exponent factor for tunneling current
tunode	1	ne	Specifies the base node connection for the tunneling current
favl	0.0	ne	Avalanche current factor (1/V)
qavl	0.0	ne	Exponent factor for avalanche current (Coul)
alfav	0.0	ne	Relative TC for FAVL (1/K)
alqav	0.0	ne	Relative TC for QAVL (1/K)
rbi0	0.0	ne	Zero bias internal base resistance (Ohm)
rbx	0.0	ne	External base series resistance (Ohm)
fgeo	0.6557	ne	Factor for geometry dependence of emitter current crowding
fdqr0	0.0	ne	Correction factor for modulation by B-E and B-C space charge layer
fcrbi	0.0	ne	Ratio of HF shunt to total internal capacitance (lateral NQS effect)
fqi	1.0	ne	Ration of internal to total minority charge
re	0.0	ne	Emitter series resistance (Ohm)
rcx	0.0	ne	External collector series resistance (Ohm)
itss	0.0	ne	Substrate transistor transfer saturation current (A)
msf	1.0	ne	Forward ideality factor of substrate transfer current
iscs	0.0	ne	C-S diode saturation current (A)
msc	1.0	ne	Ideality factor of C-S diode current
tsf	0.0	ne	Transit time for forward operation of substrate transistor (s)
rsu	0.0	ne	Substrate series resistance (Ohm)
csu	0.0	ne	Substrate shunt capacitance (F)
cjei0	1.0E-20	ne	Internal B-E zero-bias depletion capacitance (F)
vdei	0.9	ne	Internal B-E built-in potential (V)
zei	0.5	ne	Internal B-E grading coefficient
ajei	2.5	ne	Ratio of maximum to zero-bias value of internal B-E capacitance
cjep0	1.0E-20	ne	Peripheral B-E zero-bias depletion capacitance (F)
vdep	0.9	ne	Peripheral B-E built-in potential (V)
zep	0.5	ne	Peripheral B-E grading coefficient
ajep	2.5	ne	Ratio of maximum to zero-bias value of peripheral B-E capacitance
cjci0	1.0E-20	ne	Internal B-C zero-bias depletion capacitance (F)
vdci	0.7	ne	Internal B-C built-in potential (V)
zci	0.4	ne	Internal B-C grading coefficient
vptci	100	ne	Internal B-C punch-through voltage (V)
cjcx0	1.0E-20	ne	External B-C zero-bias depletion capacitance (F)
vdcx	0.7	ne	External B-C built-in potential (V)
zcx	0.4	ne	External B-C grading coefficient
vptcx	100	ne	External B-C punch-through voltage (V)
fbcpar	0.0	ne	Partitioning factor of parasitic B-C cap
fbepar	1.0	ne	Partitioning factor of parasitic B-E cap
cjs0	0.0	ne	C-S zero-bias depletion capacitance (F)
vds	0.6	ne	C-S built-in potential (V)
zs	0.5	ne	C-S grading coefficient
vpts	100	ne	C-S punch-through voltage (V)
t0	0.0	ne	Low current forward transit time at VBC=0V (s)
dt0h	0.0	ne	Time constant for base and B-C space charge layer width modulation (s)
tbvl	0.0	ne	Time constant for modelling carrier jam at low VCE (s)
tef0	0.0	ne	Neutral emitter storage time (s)
gtfe	1.0	ne	Exponent factor for current dependence of neutral emitter storage time
thcs	0.0	ne	Saturation time constant at high current densities (s)
ahc	0.1	ne	Smoothing factor for current dependence of base and collector transit time
fthc	0.0	ne	Partitioning factor for base and collector portion
rci0	150	ne	Internal collector resistance at low electric field (Ohm)
vlim	0.5	ne	Voltage separating ohmic and saturation velocity regime (V)
vces	0.1	ne	Internal C-E saturation voltage (V)
vpt	100.0	ne	Collector punch-through voltage (V)
tr	0.0	ne	Storage time for inverse operation (s)
cbepar	0.0	ne	Total parasitic B-E capacitance (F)
cbcpar	0.0	ne	Total parasitic B-C capacitance (F)
alqf	0.0	ne	Factor for additional delay time of minority charge
alit	0.0	ne	Factor for additional delay time of transfer current
flnqs	0	ne	Flag for turning on and off of vertical NQS effect
kf	0.0	ne	Flicker noise coefficient
af	2.0	ne	Flicker noise exponent factor
cfbe	-1	ne	Flag for determining where to tag the flicker noise source
latb	0.0	ne	Scaling factor for collector minority charge in direction of emitter width
latl	0.0	ne	Scaling factor for collector minority charge in direction of emitter length
vgb	1.17	ne	Bandgap voltage extrapolated to 0 K (V)
alt0	0.0	ne	First order relative TC of parameter T0 (1/K)
kt0	0.0	ne	Second order relative TC of parameter T0
zetaci	0.0	ne	Temperature exponent for RCI0
alvs	0.0	ne	Relative TC of saturation drift velocity (1/K)
alces	0.0	ne	Relative TC of VCES (1/K)
zetarbi	0.0	ne	Temperature exponent of internal base resistance
zetarbx	0.0	ne	Temperature exponent of external base resistance
zetarcx	0.0	ne	Temperature exponent of external collector resistance
zetare	0.0	ne	Temperature exponent of emitter resistance
zetacx	1.0	ne	Temperature exponent of mobility in substrate transistor transit time
vge	1.17	ne	Effective emitter bandgap voltage (V)
vgc	1.17	ne	Effective collector bandgap voltage (V)
vgs	1.17	ne	Effective substrate bandgap voltage (V)
f1vg	-1.02377e-4	ne	Coefficient K1 in T-dependent band-gap equation
f2vg	4.3215e-4	ne	Coefficient K2 in T-dependent band-gap equation
zetact	3.0	ne	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	ne	Exponent coefficient in B-E junction current temperature dependence
alb	0.0	ne	Relative TC of forward current gain for V2.1 model (1/K)
flsh	0	ne	Flag for turning on and off self-heating effect
rth	0.0	ne	Thermal resistance (K/W)
cth	0.0	ne	Thermal capacitance (J/W)
flcomp	0.0	ne	Flag for compatibility with v2.1 model (0=v2.1)
tnom	27.0	ne	Temperature at which parameters are specified (C)
dt	0.0	ne	Temperature change w.r.t. chip temperature for particular transistor (K)
Temp	27.0	ne	simulation temperature

Hicum L2 V2.31¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	HICUM L2 V2.31
Popis	hicumL2V2p31n verilog device
Schematic entry	`hicumL2V2p31n`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	hicumL2V2p31n
vlastnosti	129
Category	verilog-a devices

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
c10	2.0E-30	ne	GICCR constant (A^2s)
qp0	2.0E-14	ne	Zero-bias hole charge (Coul)
ich	0.0	ne	High-current correction for 2D and 3D effects (A)
hf0	1.0	ne	Weight factor for the low current minority charge
hfe	1.0	ne	Emitter minority charge weighting factor in HBTs
hfc	1.0	ne	Collector minority charge weighting factor in HBTs
hjei	1.0	ne	B-E depletion charge weighting factor in HBTs
ahjei	0.0	ne	Parameter describing the slope of hjEi(VBE)
rhjei	1.0	ne	Smoothing parameter for hjEi(VBE) at high voltage
hjci	1.0	ne	B-C depletion charge weighting factor in HBTs
ibeis	1.0E-18	ne	Internal B-E saturation current (A)
mbei	1.0	ne	Internal B-E current ideality factor
ireis	0.0	ne	Internal B-E recombination saturation current (A)
mrei	2.0	ne	Internal B-E recombination current ideality factor
ibeps	0.0	ne	Peripheral B-E saturation current (A)
mbep	1.0	ne	Peripheral B-E current ideality factor
ireps	0.0	ne	Peripheral B-E recombination saturation current (A)
mrep	2.0	ne	Peripheral B-E recombination current ideality factor
mcf	1.0	ne	Non-ideality factor for III-V HBTs
tbhrec	0.0	ne	Base current recombination time constant at B-C barrier for high forward injection (s)
ibcis	1.0E-16	ne	Internal B-C saturation current (A)
mbci	1.0	ne	Internal B-C current ideality factor
ibcxs	0.0	ne	External B-C saturation current (A)
mbcx	1.0	ne	External B-C current ideality factor
ibets	0.0	ne	B-E tunneling saturation current (A)
abet	40	ne	Exponent factor for tunneling current
tunode	1	ne	Specifies the base node connection for the tunneling current
favl	0.0	ne	Avalanche current factor (1/V)
qavl	0.0	ne	Exponent factor for avalanche current (Coul)
alfav	0.0	ne	Relative TC for FAVL (1/K)
alqav	0.0	ne	Relative TC for QAVL (1/K)
rbi0	0.0	ne	Zero bias internal base resistance (Ohm)
rbx	0.0	ne	External base series resistance (Ohm)
fgeo	0.6557	ne	Factor for geometry dependence of emitter current crowding
fdqr0	0.0	ne	Correction factor for modulation by B-E and B-C space charge layer
fcrbi	0.0	ne	Ratio of HF shunt to total internal capacitance (lateral NQS effect)
fqi	1.0	ne	Ration of internal to total minority charge
re	0.0	ne	Emitter series resistance (Ohm)
rcx	0.0	ne	External collector series resistance (Ohm)
itss	0.0	ne	Substrate transistor transfer saturation current (A)
msf	1.0	ne	Forward ideality factor of substrate transfer current
iscs	0.0	ne	C-S diode saturation current (A)
msc	1.0	ne	Ideality factor of C-S diode current
tsf	0.0	ne	Transit time for forward operation of substrate transistor (s)
rsu	0.0	ne	Substrate series resistance (Ohm)
csu	0.0	ne	Substrate shunt capacitance (F)
cjei0	1.0E-20	ne	Internal B-E zero-bias depletion capacitance (F)
vdei	0.9	ne	Internal B-E built-in potential (V)
zei	0.5	ne	Internal B-E grading coefficient
ajei	2.5	ne	Ratio of maximum to zero-bias value of internal B-E capacitance
cjep0	1.0E-20	ne	Peripheral B-E zero-bias depletion capacitance (F)
vdep	0.9	ne	Peripheral B-E built-in potential (V)
zep	0.5	ne	Peripheral B-E grading coefficient
ajep	2.5	ne	Ratio of maximum to zero-bias value of peripheral B-E capacitance
cjci0	1.0E-20	ne	Internal B-C zero-bias depletion capacitance (F)
vdci	0.7	ne	Internal B-C built-in potential (V)
zci	0.4	ne	Internal B-C grading coefficient
vptci	100	ne	Internal B-C punch-through voltage (V)
cjcx0	1.0E-20	ne	External B-C zero-bias depletion capacitance (F)
vdcx	0.7	ne	External B-C built-in potential (V)
zcx	0.4	ne	External B-C grading coefficient
vptcx	100	ne	External B-C punch-through voltage (V)
fbcpar	0.0	ne	Partitioning factor of parasitic B-C cap
fbepar	1.0	ne	Partitioning factor of parasitic B-E cap
cjs0	0.0	ne	C-S zero-bias depletion capacitance (F)
vds	0.6	ne	C-S built-in potential (V)
zs	0.5	ne	C-S grading coefficient
vpts	100	ne	C-S punch-through voltage (V)
t0	0.0	ne	Low current forward transit time at VBC=0V (s)
dt0h	0.0	ne	Time constant for base and B-C space charge layer width modulation (s)
tbvl	0.0	ne	Time constant for modeling carrier jam at low VCE (s)
tef0	0.0	ne	Neutral emitter storage time (s)
gtfe	1.0	ne	Exponent factor for current dependence of neutral emitter storage time
thcs	0.0	ne	Saturation time constant at high current densities (s)
ahc	0.1	ne	Smoothing factor for current dependence of base and collector transit time
fthc	0.0	ne	Partitioning factor for base and collector portion
rci0	150	ne	Internal collector resistance at low electric field (Ohm)
vlim	0.5	ne	Voltage separating ohmic and saturation velocity regime (V)
vces	0.1	ne	Internal C-E saturation voltage (V)
vpt	100.0	ne	Collector punch-through voltage (V)
tr	0.0	ne	Storage time for inverse operation (s)
vcbar	0.0	ne	Barrier voltage (V)
icbar	0.0	ne	Normalization parameter (A)
acbar	0.01	ne	Smoothing parameter for barrier voltage
delck	2.0	ne	fitting factor for critical current
cbepar	0.0	ne	Total parasitic B-E capacitance (F)
cbcpar	0.0	ne	Total parasitic B-C capacitance (F)
alqf	0.167	ne	Factor for additional delay time of minority charge
alit	0.333	ne	Factor for additional delay time of transfer current
flnqs	0	ne	Flag for turning on and off of vertical NQS effect
kf	0.0	ne	Flicker noise coefficient
af	2.0	ne	Flicker noise exponent factor
cfbe	-1	ne	Flag for determining where to tag the flicker noise source
flcono	0	ne	Flag for turning on and off of correlated noise implementation
kfre	0.0	ne	Emitter resistance flicker noise coefficient
afre	2.0	ne	Emitter resistance flicker noise exponent factor
latb	0.0	ne	Scaling factor for collector minority charge in direction of emitter width
latl	0.0	ne	Scaling factor for collector minority charge in direction of emitter length
vgb	1.17	ne	Bandgap voltage extrapolated to 0 K (V)
alt0	0.0	ne	First order relative TC of parameter T0 (1/K)
kt0	0.0	ne	Second order relative TC of parameter T0
zetaci	0.0	ne	Temperature exponent for RCI0
alvs	0.0	ne	Relative TC of saturation drift velocity (1/K)
alces	0.0	ne	Relative TC of VCES (1/K)
zetarbi	0.0	ne	Temperature exponent of internal base resistance
zetarbx	0.0	ne	Temperature exponent of external base resistance
zetarcx	0.0	ne	Temperature exponent of external collector resistance
zetare	0.0	ne	Temperature exponent of emitter resistance
zetacx	1.0	ne	Temperature exponent of mobility in substrate transistor transit time
vge	1.17	ne	Effective emitter bandgap voltage (V)
vgc	1.17	ne	Effective collector bandgap voltage (V)
vgs	1.17	ne	Effective substrate bandgap voltage (V)
f1vg	-1.02377e-4	ne	Coefficient K1 in T-dependent band-gap equation
f2vg	4.3215e-4	ne	Coefficient K2 in T-dependent band-gap equation
zetact	3.0	ne	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	ne	Exponent coefficient in B-E junction current temperature dependence
alb	0.0	ne	Relative TC of forward current gain for V2.1 model (1/K)
dvgbe	0	ne	Bandgap difference between B and B-E junction used for hjEi0 and hf0 (V)
zetahjei	1	ne	Temperature coefficient for ahjEi
zetavgbe	1	ne	Temperature coefficient for hjEi0
flsh	0	ne	Flag for turning on and off self-heating effect
rth	0.0	ne	Thermal resistance (K/W)
zetarth	0.0	ne	Temperature coefficient for Rth
alrth	0.0	ne	First order relative TC of parameter Rth (1/K)
cth	0.0	ne	Thermal capacitance (J/W)
flcomp	0.0	ne	Flag for compatibility with v2.1 model (0=v2.1)
tnom	27.0	ne	Temperature at which parameters are specified (C)
dt	0.0	ne	Temperature change w.r.t. chip temperature for particular transistor (K)
Temp	27.0	ne	simulation temperature

Photodiode¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Photodiode
Popis	Photodiode verilog device
Schematic entry	`photodiode`
Netlist entry	`PD`
Typ	AnalogComponent
Bitmap file	photodiode
vlastnosti	23
Category	verilog-a devices

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
N	1.35	ne	photodiode emission coefficient
Rseries	1e-3	ne	series lead resistance (Ohm)
Is	0.34e-12	ne	diode dark current (A)
Bv	60	ne	reverse breakdown voltage (V)
Ibv	1e-3	ne	current at reverse breakdown voltage (A)
Vj	0.7	ne	junction potential (V)
Cj0	60e-12	ne	zero-bias junction capacitance (F)
M	0.5	ne	koeficient gradace
Area	1.0	ne	diode relative area
Tnom	26.85	ne	parameter measurement temperature (Celsius)
Fc	0.5	ne	linearizační koeficient kapacity v závěrném směru
Tt	10e-9	ne	transit time (s)
Xti	3.0	ne	teplotní exponent saturačního proudu
Eg	1.16	ne	energy gap (eV)
Responsivity	0.5	ne	responsivity (A/W)
Rsh	5e8	ne	shunt resistance (Ohm)
QEpercent	80	ne	quantum efficiency (%)
Lambda	900	ne	light wavelength (nm)
LEVEL	1	ne	responsivity calculator selector
Kf	1e-12	ne	koeficient 1/f rušení
Af	1.0	ne	exponent 1/f rušení
Ffe	1.0	ne	frekvenční exponent 1/f rušení
Temp	26.85	ne	simulation temperature

Phototransistor¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Phototransistor
Popis	Phototransistor verilog device
Schematic entry	`phototransistor`
Netlist entry	`PT`
Typ	AnalogComponent
Bitmap file	phototransistor
vlastnosti	30
Category	verilog-a devices

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Bf	100	ne	ideální proudové zesílení v propustném směru
Br	0.1	ne	ideální proudové zesílení v závěrném směru
Is	1e-10	ne	dark current (A)
Nf	1	ne	emisní koeficient v propustném směru
Nr	1	ne	zpětný emisní koeficient
Vaf	100	ne	forward early voltage (V)
Var	100	ne	reverse early voltage (V)
Mje	0.33	ne	gradační koeficient BE
Vje	0.75	ne	base-emitter junction built-in potential (V)
Cje	1e-12	ne	base-emitter zero-bias depletion capacitance (F)
Mjc	0.33	ne	gradační koeficient BC
Vjc	0.75	ne	base-collector junction built-in potential (V)
Cjc	2e-12	ne	base-collector zero-bias depletion capacitance (F)
Tr	100n	ne	ideal reverse transit time (s)
Tf	0.1n	ne	ideal forward transit time (s)
Ikf	10	ne	high current corner for forward beta (A)
Ikr	10	ne	high current corner for reverse beta (A)
Rc	10	ne	collector series resistance (Ohm)
Re	1	ne	emitter series resistance (Ohm)
Rb	100	ne	base series resistance (Ohm)
Kf	1e-12	ne	koeficient 1/f rušení
Ffe	1	ne	koeficient 1/f rušení
Af	1	ne	exponent 1/f rušení
Responsivity	1.5	ne	responsivity at relative selectivity=100% (A/W)
P0	2.6122e3	ne	relative selectivity polynomial coefficient
P1	-1.489e1	ne	relative selectivity polynomial coefficient
P2	3.0332e-2	ne	relative selectivity polynomial coefficient
P3	-2.5708e-5	ne	relative selectivity polynomial coefficient
P4	7.6923e-9	ne	relative selectivity polynomial coefficient
Temp	26.85	ne	simulation temperature

Nigbt¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	NIGBT
Popis	NIGBT verilog device
Schematic entry	`nigbt`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	nigbt
vlastnosti	19
Category	verilog-a devices

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Agd	5.0e-6	ne	gate-drain overlap area (m**2)
Area	1.0e-5	ne	area of the device (m**2)
Kp	0.38	ne	MOS transconductance (A/V**2)
Tau	7.1e-6	ne	ambipolar recombination lifetime (s)
Wb	9.0e-5	ne	metallurgical base width (m)
BVf	1.0	ne	avalanche uniformity factor
BVn	4.0	ne	avalanche multiplication exponent
Cgs	1.24e-8	ne	gate-source capacitance per unit area (F/cm**2)
Coxd	3.5e-8	ne	gate-drain oxide capacitance per unit area (F/cm**2)
Jsne	6.5e-13	ne	emitter saturation current density (A/cm**2)
Kf	1.0	ne	triode region factor
Mun	1.5e-3	ne	electron mobility (cm**2/Vs)
Mup	4.5e-2	ne	hole mobility (cm**2/Vs)
Nb	2.0e14	ne	base doping (1/cm**3)
Theta	0.02	ne	transverse field factor (1/V)
Vt	4.7	ne	threshold voltage (V)
Vtd	1.0e-3	ne	gate-drain overlap depletion threshold (V)
Tnom	26.85	ne	parameter measurement temperature (Celsius)
Temp	26.85	ne	simulation temperature (Celsius)

Voltage Controlled Resistor¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Voltage Controlled Resistor
Popis	napěťově řízený zdroj napětí
Schematic entry	`vcresistor`
Netlist entry	`VCR`
Typ	AnalogComponent
Bitmap file	vcresistor
vlastnosti	1
Category	verilog-a devices

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
gain	1	ano	resistance gain

Digital Components¶

Digital Source¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	digitální zdroj
Popis	digitální zdroj
Schematic entry	`DigiSource`
Netlist entry	`S`
Typ	Komponenta
Bitmap file	digi_source
vlastnosti	4
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Num	1	ano	číslo portu
init	low	ne	initial output value [low, high]
times	1ns; 1ns	ne	seznam pro okamžiky změn výstupních parametrů
V	1 V	ne	napětí horní úrovně

Negátor¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Negátor
Popis	logický negátor
Schematic entry	`Inv`
Netlist entry	`Y`
Typ	Komponenta
Bitmap file	inverter
vlastnosti	4
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
V	1 V	ne	napětí horní úrovně
t	0	ne	doba prodlevy
TR	10	ne	transfer function scaling factor
Symbol	old	ne	schematic symbol [old, DIN40900]

N-Port Or¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	n-port OR
Popis	logický OR
Schematic entry	`OR`
Netlist entry	`Y`
Typ	Komponenta
Bitmap file	or
vlastnosti	5
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
in	2	ne	počet vstupů
V	1 V	ne	napětí horní úrovně
t	0	ne	doba prodlevy
TR	10	ne	transfer function scaling factor
Symbol	old	ne	schematic symbol [old, DIN40900]

N-Port Nor¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	n-port NOR
Popis	logický NOR
Schematic entry	`NOR`
Netlist entry	`Y`
Typ	Komponenta
Bitmap file	nor
vlastnosti	5
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
in	2	ne	počet vstupů
V	1 V	ne	napětí horní úrovně
t	0	ne	doba prodlevy
TR	10	ne	transfer function scaling factor
Symbol	old	ne	schematic symbol [old, DIN40900]

N-Port And¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	n-port AND
Popis	logický AND
Schematic entry	`AND`
Netlist entry	`Y`
Typ	Komponenta
Bitmap file	and
vlastnosti	5
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
in	2	ne	počet vstupů
V	1 V	ne	napětí horní úrovně
t	0	ne	doba prodlevy
TR	10	ne	transfer function scaling factor
Symbol	old	ne	schematic symbol [old, DIN40900]

N-Port Nand¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	n-port NAND
Popis	logický NAND
Schematic entry	`NAND`
Netlist entry	`Y`
Typ	Komponenta
Bitmap file	nand
vlastnosti	5
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
in	2	ne	počet vstupů
V	1 V	ne	napětí horní úrovně
t	0	ne	doba prodlevy
TR	10	ne	transfer function scaling factor
Symbol	old	ne	schematic symbol [old, DIN40900]

N-Port Xor¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	n-port XOR
Popis	logický XOR
Schematic entry	`XOR`
Netlist entry	`Y`
Typ	Komponenta
Bitmap file	xor
vlastnosti	5
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
in	2	ne	počet vstupů
V	1 V	ne	napětí horní úrovně
t	0	ne	doba prodlevy
TR	10	ne	transfer function scaling factor
Symbol	old	ne	schematic symbol [old, DIN40900]

N-Port Xnor¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	n-port XNOR
Popis	logický XNOR
Schematic entry	`XNOR`
Netlist entry	`Y`
Typ	Komponenta
Bitmap file	xnor
vlastnosti	5
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
in	2	ne	počet vstupů
V	1 V	ne	napětí horní úrovně
t	0	ne	doba prodlevy
TR	10	ne	transfer function scaling factor
Symbol	old	ne	schematic symbol [old, DIN40900]

Buffer¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Buffer
Popis	logical buffer
Schematic entry	`Buf`
Netlist entry	`Y`
Typ	Komponenta
Bitmap file	buffer
vlastnosti	4
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
V	1 V	ne	napětí horní úrovně
t	0	ne	doba prodlevy
TR	10	ne	transfer function scaling factor
Symbol	old	ne	schematic symbol [old, DIN40900]

4X2 Andor¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	4x2 AndOr
Popis	4x2 andor verilog device
Schematic entry	`andor4x2`
Netlist entry	`Y`
Typ	Komponenta
Bitmap file	andor4x2
vlastnosti	2
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
TR	6	ne	transfer function high scaling factor
Delay	1 ns	ne	output delay (s)

4X3 Andor¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	4x3 AndOr
Popis	4x3 andor verilog device
Schematic entry	`andor4x3`
Netlist entry	`Y`
Typ	Komponenta
Bitmap file	andor4x3
vlastnosti	2
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
TR	6	ne	transfer function high scaling factor
Delay	1 ns	ne	output delay (s)

4X4 Andor¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	4x4 AndOr
Popis	4x4 andor verilog device
Schematic entry	`andor4x4`
Netlist entry	`Y`
Typ	Komponenta
Bitmap file	andor4x4
vlastnosti	2
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
TR	6	ne	transfer function high scaling factor
Delay	1 ns	ne	output delay (s)

2To1 Mux¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	2to1 Mux
Popis	2to1 multiplexer verilog device
Schematic entry	`mux2to1`
Netlist entry	`Y`
Typ	Komponenta
Bitmap file	mux2to1
vlastnosti	2
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
TR	6	ne	transfer function high scaling factor
Delay	1 ns	ne	output delay (s)

4To1 Mux¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	4to1 Mux
Popis	4to1 multiplexer verilog device
Schematic entry	`mux4to1`
Netlist entry	`Y`
Typ	Komponenta
Bitmap file	mux4to1
vlastnosti	2
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
TR	6	ne	transfer function high scaling factor
Delay	1 ns	ne	output delay (s)

8To1 Mux¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	8to1 Mux
Popis	8to1 multiplexer verilog device
Schematic entry	`mux8to1`
Netlist entry	`Y`
Typ	Komponenta
Bitmap file	mux8to1
vlastnosti	2
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
TR	6	ne	transfer function high scaling factor
Delay	1 ns	ne	output delay (s)

2To4 Demux¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	2to4 Demux
Popis	2to4 demultiplexer verilog device
Schematic entry	`dmux2to4`
Netlist entry	`Y`
Typ	Komponenta
Bitmap file	dmux2to4
vlastnosti	2
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
TR	6	ne	transfer function high scaling factor
Delay	1 ns	ne	output delay (s)

3To8 Demux¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	3to8 Demux
Popis	3to8 demultiplexer verilog device
Schematic entry	`dmux3to8`
Netlist entry	`Y`
Typ	Komponenta
Bitmap file	dmux3to8
vlastnosti	2
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
TR	6	ne	transfer function high scaling factor
Delay	1 ns	ne	output delay (s)

4To16 Demux¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	4to16 Demux
Popis	4to16 demultiplexer verilog device
Schematic entry	`dmux4to16`
Netlist entry	`Y`
Typ	Komponenta
Bitmap file	dmux4to16
vlastnosti	2
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
TR	6	ne	transfer function high scaling factor
Delay	1 ns	ne	output delay (s)

1Bit Halfadder¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	1Bit HalfAdder
Popis	1bit half adder verilog device
Schematic entry	`ha1b`
Netlist entry	`Y`
Typ	Komponenta
Bitmap file	ha1b
vlastnosti	2
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
TR	6	ne	transfer function high scaling factor
Delay	1 ns	ne	output delay (s)

1Bit Fulladder¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	1Bit FullAdder
Popis	1bit full adder verilog device
Schematic entry	`fa1b`
Netlist entry	`Y`
Typ	Komponenta
Bitmap file	fa1b
vlastnosti	2
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
TR	6	ne	transfer function high scaling factor
Delay	1 ns	ne	output delay (s)

2Bit Fulladder¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	2Bit FullAdder
Popis	2bit full adder verilog device
Schematic entry	`fa2b`
Netlist entry	`Y`
Typ	Komponenta
Bitmap file	fa2b
vlastnosti	2
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
TR	6	ne	transfer function high scaling factor
Delay	1 ns	ne	output delay (s)

Rs-Flipflop¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	RS-FlipFlop
Popis	RS flip flop
Schematic entry	`RSFF`
Netlist entry	`Y`
Typ	DigitalComponent
Bitmap file	rsflipflop
vlastnosti	1
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
t	0	ne	doba prodlevy

D-Flipflop¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	D-FlipFlop
Popis	D flip flop s asynchronním reset vstupem
Schematic entry	`DFF`
Netlist entry	`Y`
Typ	DigitalComponent
Bitmap file	dflipflop
vlastnosti	1
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
t	0	ne	doba prodlevy

D-Flipflop W/ Sr¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	D-FlipFlop w/ SR
Popis	D flip flop with set and reset verilog device
Schematic entry	`dff_SR`
Netlist entry	`Y`
Typ	Komponenta
Bitmap file	dff_SR
vlastnosti	3
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
TR_H	6	ne	cross coupled gate transfer function high scaling factor
TR_L	5	ne	cross coupled gate transfer function low scaling factor
Delay	1 ns	ne	cross coupled gate delay (s)

Jk-Flipflop¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	JK-FlipFlop
Popis	JK flip flop s asynchroními set a reset vstupy
Schematic entry	`JKFF`
Netlist entry	`Y`
Typ	DigitalComponent
Bitmap file	jkflipflop
vlastnosti	1
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
t	0	ne	doba prodlevy

Jk-Flipflop W/ Sr¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	JK-FlipFlop w/ SR
Popis	jk flip flop with set and reset verilog device
Schematic entry	`jkff_SR`
Netlist entry	`Y`
Typ	Komponenta
Bitmap file	jkff_SR
vlastnosti	3
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
TR_H	6	ne	cross coupled gate transfer function high scaling factor
TR_L	5	ne	cross coupled gate transfer function low scaling factor
Delay	1 ns	ne	cross coupled gate delay (s)

T-Flipflop W/ Sr¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	T-FlipFlop w/ SR
Popis	T flip flop with set and reset verilog device
Schematic entry	`tff_SR`
Netlist entry	`Y`
Typ	Komponenta
Bitmap file	tff_SR
vlastnosti	3
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
TR_H	6	ne	cross coupled gate transfer function high scaling factor
TR_L	5	ne	cross coupled gate transfer function low scaling factor
Delay	1 ns	ne	cross coupled gate delay (s)

Gated D-Latch¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Gated D-Latch
Popis	gated D latch verilog device
Schematic entry	`gatedDlatch`
Netlist entry	`Y`
Typ	Komponenta
Bitmap file	gatedDlatch
vlastnosti	3
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
TR_H	6	ne	cross coupled gate transfer function high scaling factor
TR_L	5	ne	cross coupled gate transfer function low scaling factor
Delay	1 ns	ne	cross coupled gate delay (s)

Logic 0¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Logic 0
Popis	logic 0 verilog device
Schematic entry	`logic_0`
Netlist entry	`S`
Typ	Komponenta
Bitmap file	logic_0
vlastnosti	1
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
LEVEL	0	ne	logic 0 voltage level (V)

Logic 1¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Logic 1
Popis	logic 1 verilog device
Schematic entry	`logic_1`
Netlist entry	`S`
Typ	Komponenta
Bitmap file	logic_1
vlastnosti	1
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
LEVEL	1	ne	logic 1 voltage level (V)

2Bit Pattern¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	2Bit Pattern
Popis	2bit pattern generator verilog device
Schematic entry	`pad2bit`
Netlist entry	`Y`
Typ	Komponenta
Bitmap file	pad2bit
vlastnosti	1
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Number	0	ne	pad output value

3Bit Pattern¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	3Bit Pattern
Popis	3bit pattern generator verilog device
Schematic entry	`pad3bit`
Netlist entry	`Y`
Typ	Komponenta
Bitmap file	pad3bit
vlastnosti	1
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Number	0	ne	pad output value

4Bit Pattern¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	4Bit Pattern
Popis	4bit pattern generator verilog device
Schematic entry	`pad4bit`
Netlist entry	`Y`
Typ	Komponenta
Bitmap file	pad4bit
vlastnosti	1
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Number	0	ne	pad output value

A2D Level Shifter¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	A2D Level Shifter
Popis	data voltage level shifter (analogue to digital) verilog device
Schematic entry	`DLS_nto1`
Netlist entry	`Y`
Typ	AnalogComponent
Bitmap file	DLS_nto1
vlastnosti	2
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
LEVEL	5 V	ne	voltage level (V)
Delay	1 ns	ne	time delay (s)

D2A Level Shifter¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	D2A Level Shifter
Popis	data voltage level shifter (digital to analogue) verilog device
Schematic entry	`DLS_1ton`
Netlist entry	`Y`
Typ	AnalogComponent
Bitmap file	DLS_1ton
vlastnosti	2
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
LEVEL	5 V	ne	voltage level
Delay	1 ns	ne	time delay (s)

4Bit Bin2Grey¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	4Bit Bin2Grey
Popis	4bit binary to grey converter verilog device
Schematic entry	`binarytogrey4bit`
Netlist entry	`Y`
Typ	Komponenta
Bitmap file	binarytogrey4bit
vlastnosti	2
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
TR	6	ne	transfer function scaling factor
Delay	1 ns	ne	output delay (s)

4Bit Grey2Bin¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	4Bit Grey2Bin
Popis	4bit grey to binary converter verilog device
Schematic entry	`greytobinary4bit`
Netlist entry	`Y`
Typ	Komponenta
Bitmap file	greytobinary4bit
vlastnosti	2
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
TR	6	ne	transfer function scaling factor
Delay	1 ns	ne	output delay (s)

1Bit Comparator¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	1Bit Comparator
Popis	1bit comparator verilog device
Schematic entry	`comp_1bit`
Netlist entry	`Y`
Typ	Komponenta
Bitmap file	comp_1bit
vlastnosti	2
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
TR	6	ne	transfer function high scaling factor
Delay	1 ns	ne	output delay (s)

2Bit Comparator¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	2Bit Comparator
Popis	2bit comparator verilog device
Schematic entry	`comp_2bit`
Netlist entry	`Y`
Typ	Komponenta
Bitmap file	comp_2bit
vlastnosti	2
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
TR	6	ne	transfer function high scaling factor
Delay	1 ns	ne	output delay (s)

4Bit Comparator¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	4Bit Comparator
Popis	4bit comparator verilog device
Schematic entry	`comp_4bit`
Netlist entry	`Y`
Typ	Komponenta
Bitmap file	comp_4bit
vlastnosti	2
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
TR	6	ne	transfer function high scaling factor
Delay	1 ns	ne	output delay (s)

4Bit Hpri-Bin¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	4Bit HPRI-Bin
Popis	4bit highest priority encoder (binary form) verilog device
Schematic entry	`hpribin4bit`
Netlist entry	`Y`
Typ	Komponenta
Bitmap file	hpribin4bit
vlastnosti	2
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
TR	6	ne	transfer function scaling factor
Delay	1 ns	ne	output delay (s)

Vhdl File¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	VHDL soubor
Popis	VHDL soubor
Schematic entry	`VHDL`
Netlist entry	`X`
Typ	DigitalComponent
Bitmap file	vhdlfile
vlastnosti	1
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
File	sub.vhdl	ne	Jméno VHDL souboru

Verilog File¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Verilog file
Popis	Verilog file
Schematic entry	`Verilog`
Netlist entry	`X`
Typ	DigitalComponent
Bitmap file	vhdlfile
vlastnosti	1
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
File	sub.v	ne	Name of Verilog file

Digital Simulation¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	digitální simulace
Popis	digitální simulace
Schematic entry	`.Digi`
Netlist entry	`Digi`
Typ	DigitalComponent
Bitmap file	digi
vlastnosti	3
Category	digital components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Typ	TruthTable	ano	type of simulation [TruthTable, TimeList]
time	10 ns	ne	Trvání TimeList simulace
Model	VHDL	ne	netlist format [VHDL, Verilog]

File Components¶

Spice Netlist¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	SPICE netlist
Popis	SPICE netlist soubor
Schematic entry	`SPICE`
Netlist entry	`X`
Typ	AnalogComponent
Bitmap file	spicefile
vlastnosti	4
Category	file components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
File		ano	x
Ports		ne	x
Sim	ano	ne	x
Preprocessor	none	ne	x

1-Port S Parameter File¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	1-port S-parametr soubor
Popis	S-parametrový soubor
Schematic entry	`SPfile`
Netlist entry	`X`
Typ	AnalogComponent
Bitmap file	spfile1
vlastnosti	5
Category	file components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
File	test.s1p	ano	Jméno souboru s S-parametry
data	rectangular	ne	data type [rectangular, polar]
Interpolator	lineární	ne	interpolation type [linear, cubic]
duringDC	open	ne	representation during DC analysis [open, short, shortall, unspecified]
Ports	1	ne	počet portů

2-Port S Parameter File¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	2-port S parameter soubor
Popis	S-parametrový soubor
Schematic entry	`SPfile`
Netlist entry	`X`
Typ	AnalogComponent
Bitmap file	spfile2
vlastnosti	5
Category	file components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
File	test.s2p	ano	Jméno souboru s S-parametry
data	rectangular	ne	data type [rectangular, polar]
Interpolator	lineární	ne	interpolation type [linear, cubic]
duringDC	open	ne	representation during DC analysis [open, short, shortall, unspecified]
Ports	2	ne	počet portů

N-Port S Parameter File¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	n-port S parameter soubor
Popis	S-parametrový soubor
Schematic entry	`SPfile`
Netlist entry	`X`
Typ	AnalogComponent
Bitmap file	spfile3
vlastnosti	5
Category	file components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
File	test.s3p	ano	Jméno souboru s S-parametry
data	rectangular	ne	data type [rectangular, polar]
Interpolator	lineární	ne	interpolation type [linear, cubic]
duringDC	open	ne	representation during DC analysis [open, short, shortall, unspecified]
Ports	3	ne	počet portů

Podobvod¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Podobvod
Popis	podobvod
Schematic entry	`Sub`
Netlist entry	`SUB`
Typ	Komponenta
Bitmap file	podobvod
vlastnosti	1
Category	file components

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
File		ne	Jméno souboru elektrického schématu formátu Qucs

Simulations¶

Dc Simulation¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	DC simulace
Popis	DC simulace
Schematic entry	`.DC`
Netlist entry	`DC`
Typ	AnalogComponent
Bitmap file	dc
vlastnosti	9
Category	simulations

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Temp	26.85	ne	teplota při simulaci ve °C
reltol	0.001	ne	relativení tolerance pro konvergenci
abstol	1 pA	ne	absolutní tolerance pro proudy
vntol	1 uV	ne	absolutní tolerance pro napětí
saveOPs	ne	ne	put operating points into dataset [yes, no]
MaxIter	150	ne	maximální počet iterací
saveAll	ne	ne	save subcircuit nodes into dataset [yes, no]
convHelper	none	ne	preferred convergence algorithm [none, gMinStepping, SteepestDescent, LineSearch, Attenuation, SourceStepping]
Solver	CroutLU	ne	method for solving the circuit matrix [CroutLU, DoolittleLU, HouseholderQR, HouseholderLQ, GolubSVD]

Transient Simulation¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Přechodová simulace
Popis	přechodová simulace
Schematic entry	`.TR`
Netlist entry	`TR`
Typ	AnalogComponent
Bitmap file	tran
vlastnosti	20
Category	simulations

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Typ	lin	ano	sweep type [lin, log, list, const]
Start	0	ano	čas spuštění v sekundách
Stop	1 ms	ano	čas zastavení v sekundách
Points	11	ne	počet časových kroků simulace
IntegrationMethod	Trapezoidal	ne	integration method [Euler, Trapezoidal, Gear, AdamsMoulton]
Order	2	ne	order of integration method (1-6)
InitialStep	1 ns	ne	počáteční délka kroku v sekundách
MinStep	1e-16	ne	minimální délka kroku v sekundách
MaxIter	150	ne	maximální počet iterací
reltol	0.001	ne	relativení tolerance pro konvergenci
abstol	1 pA	ne	absolutní tolerance pro proudy
vntol	1 uV	ne	absolutní tolerance pro napětí
Temp	26.85	ne	teplota při simulaci ve °C
LTEreltol	1e-3	ne	relativní tolerance lokální chyby ukončení
LTEabstol	1e-6	ne	absolutní tolerance lokální chyby ukončení
LTEfactor	1	ne	Faktor pro přehodnocení lokální chyby ukončení
Solver	CroutLU	ne	method for solving the circuit matrix [CroutLU, DoolittleLU, HouseholderQR, HouseholderLQ, GolubSVD]
relaxTSR	ne	ne	relax time step raster [no, yes]
initialDC	ano	ne	perform an initial DC analysis [yes, no]
MaxStep	0	ne	maximální velikost kroku v sekundách

Ac Simulation¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	AC-Simulace
Popis	AC-Simulace
Schematic entry	`.AC`
Netlist entry	`AC`
Typ	AnalogComponent
Bitmap file	ac
vlastnosti	5
Category	simulations

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Typ	lin	ano	sweep type [lin, log, list, const]
Start	1 GHz	ano	Počáteční frekvence v Hertzích
Stop	10 GHz	ano	Koncová frekvence v Hertzích
Points	19	ano	počet simulačních kroků
Noise	ne	ne	calculate noise voltages [yes, no]

S-Parameter Simulation¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	S parameter simulace
Popis	S parametr simulace
Schematic entry	`.SP`
Netlist entry	`SP`
Typ	AnalogComponent
Bitmap file	sparameter
vlastnosti	9
Category	simulations

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Typ	lin	ano	sweep type [lin, log, list, const]
Start	1 GHz	ano	Počáteční frekvence v Hertzích
Stop	10 GHz	ano	Koncová frekvence v Hertzích
Points	19	ano	počet simulačních kroků
Noise	ne	ne	calculate noise parameters [yes, no]
NoiseIP	1	ne	vstupní port pro číslo rušení
NoiseOP	2	ne	výstupní port pro číslo rušení
saveCVs	ne	ne	put characteristic values into dataset [yes, no]
saveAll	ne	ne	save subcircuit characteristic values into dataset [yes, no]

Harmonic Balance¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Harmonic balance
Popis	Harmonic balance simulace
Schematic entry	`.HB`
Netlist entry	`HB`
Typ	AnalogComponent
Bitmap file	hb
vlastnosti	6
Category	simulations

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
f	1 GHz	ne	frekvence v Hertzích
n	4	ano	počet harmonických
iabstol	1 pA	ne	absolutní tolerance pro proudy
vabstol	1 uV	ne	absolutní tolerance pro napětí
reltol	0.001	ne	relativení tolerance pro konvergenci
MaxIter	150	ne	maximální počet iterací

Parameter Sweep¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	Variace parametru
Popis	Variace parametru
Schematic entry	`.SW`
Netlist entry	`SW`
Typ	AnalogComponent
Bitmap file	sweep
vlastnosti	6
Category	simulations

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Sim		ano	simulace pro variaci parametru
Typ	lin	ano	sweep type [lin, log, list, const]
Param	R1	ano	parametr k variaci
Start	5 Ohm	ano	počáteční hodnota variace
Stop	50 Ohm	ano	konečná hodnota variace
Points	20	ano	počet simulačních kroků

Digital Simulation¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	digitální simulace
Popis	digitální simulace
Schematic entry	`.Digi`
Netlist entry	`Digi`
Typ	DigitalComponent
Bitmap file	digi
vlastnosti	3
Category	simulations

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Typ	TruthTable	ano	type of simulation [TruthTable, TimeList]
time	10 ns	ne	Trvání TimeList simulace
Model	VHDL	ne	netlist format [VHDL, Verilog]

Optimalizace¶

Symbol¶

Component Data¶

Component Data
Field	hodnota
Caption	optimalizace
Popis	Optimalizace
Schematic entry	`.Opt`
Netlist entry	`Opt`
Typ	AnalogComponent
Bitmap file	optimize
vlastnosti	2
Category	simulations

Parametry komponenty¶

Default Parameters
jméno	hodnota	Display	Popis
Sim		ne
DE	3\|50\|2\|20\|0.85\|1\|3\|1e-6\|10\|100	ne