Component Reference¶

Lumped Components¶

Widerstand¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Widerstand
Beschreibung	Widerstand
Schematic entry	`R`
Netlist entry	`R`
Typ	AnalogComponent
Bitmap file	Widerstand
Eigenschaften	6
Category	lumped components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
R	50 Ohm	ja	Ohmscher Widerstand in Ohm
Temp	26.85	nein	Simulationstemperatur in °C
Tc1	0.0	nein	Temperaturkoeffizient erster Ordnung
Tc2	0.0	nein	Temperaturkoeffizient zweiter Ordnung
Tnom	26.85	nein	Temperatur bei der die Modellparameter extrahiert wurden
Symbol	european	nein	schematic symbol [european, US]

Resistor Us¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Widerstand US
Beschreibung	Widerstand
Schematic entry	`R`
Netlist entry	`R`
Typ	AnalogComponent
Bitmap file	resistor_us
Eigenschaften	6
Category	lumped components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
R	50 Ohm	ja	Ohmscher Widerstand in Ohm
Temp	26.85	nein	Simulationstemperatur in °C
Tc1	0.0	nein	Temperaturkoeffizient erster Ordnung
Tc2	0.0	nein	Temperaturkoeffizient zweiter Ordnung
Tnom	26.85	nein	Temperatur bei der die Modellparameter extrahiert wurden
Symbol	US	nein	schematic symbol [european, US]

Kondensator¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Kondensator
Beschreibung	Kondensator
Schematic entry	`C`
Netlist entry	`C`
Typ	AnalogComponent
Bitmap file	Kondensator
Eigenschaften	3
Category	lumped components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
C	1 pF	ja	Kapazität in Farad
V		nein	initial voltage for transient simulation
Symbol	neutral	nein	schematic symbol [neutral, polar]

Spule¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Spule
Beschreibung	Spule
Schematic entry	`L`
Netlist entry	`L`
Typ	AnalogComponent
Bitmap file	Spule
Eigenschaften	2
Category	lumped components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
L	1 nH	ja	Induktivität in Henry
I		nein	initial current for transient simulation

Masse¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Masse
Beschreibung	Masse (Referenzpotential)
Schematic entry	`GND`
Netlist entry
Typ	Component
Bitmap file	gnd
Eigenschaften	0
Category	lumped components

Schaltkreis-Anschluss¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Schaltkreis-Anschluss
Beschreibung	Teilschaltungstor
Schematic entry	`Port`
Netlist entry	`P`
Typ	Component
Bitmap file	subport
Eigenschaften	2
Category	lumped components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Num	1	ja	Tornummer in der Teilschaltung
Typ	analog	nein	type of the port (for digital simulation only) [analog, in, out, inout]

Transformator¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Transformator
Beschreibung	idealer Transformator
Schematic entry	`Tr`
Netlist entry	`Tr`
Typ	AnalogComponent
Bitmap file	transformer
Eigenschaften	1
Category	lumped components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
T	1	ja	Spannungstransformationsverhältnis

Symmetric Transformer¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	symmetrischer Transformator
Beschreibung	idealer symmetrischer Transformator
Schematic entry	`sTr`
Netlist entry	`Tr`
Typ	AnalogComponent
Bitmap file	symtrans
Eigenschaften	2
Category	lumped components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
T1	1	ja	Spannungstransformationsverhältnis der Spule 1
T2	1	ja	Spannungstransformationsverhältnis der Spule 2

Dc Block¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	DC-Sperre
Beschreibung	DC-Sperre
Schematic entry	`DCBlock`
Netlist entry	`C`
Typ	AnalogComponent
Bitmap file	dcblock
Eigenschaften	1
Category	lumped components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
C	1 uF	nein	für die Transientensimulation: Kapazität in Farad

Dc Feed¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	DC-Zuführung
Beschreibung	DC-Zuführung
Schematic entry	`DCFeed`
Netlist entry	`L`
Typ	AnalogComponent
Bitmap file	dcfeed
Eigenschaften	1
Category	lumped components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
L	1 uH	nein	für die Transientensimulation: Induktivität in Henry

Bias T¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Bias T
Beschreibung	Bias T
Schematic entry	`BiasT`
Netlist entry	`X`
Typ	AnalogComponent
Bitmap file	biast
Eigenschaften	2
Category	lumped components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
L	1 uH	nein	für die Transientensimulation: Induktivität in Henry
C	1 uF	nein	für die Transientensimulation: Kapazität in Farad

Dämpfungsglied¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Dämpfungsglied
Beschreibung	Dämpfungsglied
Schematic entry	`Attenuator`
Netlist entry	`X`
Typ	AnalogComponent
Bitmap file	Dämpfungsglied
Eigenschaften	3
Category	lumped components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
L	10 dB	ja	Leistungsdämpfung
Zref	50 Ohm	nein	Referenzimpedanz
Temp	26.85	nein	Simulationstemperatur in °C

Verstärker¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Verstärker
Beschreibung	idealer Verstärker
Schematic entry	`Amp`
Netlist entry	`X`
Typ	AnalogComponent
Bitmap file	amplifier
Eigenschaften	4
Category	lumped components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
G	10	ja	Spannungsverstärkung
Z1	50 Ohm	nein	Referenzimpedanz des Eingangstors
Z2	50 Ohm	nein	Referenzimpedanz des Ausgangstors
NF	0 dB	nein	noise figure

Isolator¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Isolator
Beschreibung	Isolator
Schematic entry	`Isolator`
Netlist entry	`X`
Typ	AnalogComponent
Bitmap file	Isolator
Eigenschaften	3
Category	lumped components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Z1	50 Ohm	nein	Referenzimpedanz des Eingangstors
Z2	50 Ohm	nein	Referenzimpedanz des Ausgangstors
Temp	26.85	nein	Simulationstemperatur in °C

Zirkulator¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Zirkulator
Beschreibung	Zirkulator
Schematic entry	`Circulator`
Netlist entry	`X`
Typ	AnalogComponent
Bitmap file	Zirkulator
Eigenschaften	3
Category	lumped components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Z1	50 Ohm	nein	Referenzimpedanz von Tor 1
Z2	50 Ohm	nein	Referenzimpedanz von Tor 2
Z3	50 Ohm	nein	Referenzimpedanz von Tor 3

Gyrator¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Gyrator
Beschreibung	Gyrator (Impedanzinverter)
Schematic entry	`Gyrator`
Netlist entry	`X`
Typ	AnalogComponent
Bitmap file	gyrator
Eigenschaften	2
Category	lumped components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
R	50 Ohm	ja	Gyratorverhältnis
Zref	50 Ohm	nein	Referenzimpedanz

Phasenschieber¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Phasenschieber
Beschreibung	Phasenschieber
Schematic entry	`PShift`
Netlist entry	`X`
Typ	AnalogComponent
Bitmap file	pshifter
Eigenschaften	2
Category	lumped components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
phi	90	ja	Phasenverschiebung in Grad
Zref	50 Ohm	nein	Referenzimpedanz

Koppler¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Koppler
Beschreibung	idealer Koppler
Schematic entry	`Coupler`
Netlist entry	`X`
Typ	AnalogComponent
Bitmap file	coupler
Eigenschaften	3
Category	lumped components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
k	0.7071	ja	Koppelfaktor
phi	180	ja	Phasenverschiebung des Koppelpfades in Grad
Z	50 Ohm	nein	Referenzimpedanz

Hybrid¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Hybrid
Beschreibung	hybrid (unsymmetrical 3dB coupler)
Schematic entry	`Hybrid`
Netlist entry	`X`
Typ	AnalogComponent
Bitmap file	hybrid
Eigenschaften	2
Category	lumped components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
phi	90	ja	Phasenverschiebung in Grad
Zref	50 Ohm	nein	Referenzimpedanz

Amperemeter¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Amperemeter
Beschreibung	Amperemeter
Schematic entry	`IProbe`
Netlist entry	`Pr`
Typ	AnalogComponent
Bitmap file	iprobe
Eigenschaften	0
Category	lumped components

Voltmeter¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Voltmeter
Beschreibung	Voltmeter
Schematic entry	`VProbe`
Netlist entry	`Pr`
Typ	AnalogComponent
Bitmap file	vprobe
Eigenschaften	0
Category	lumped components

Gekoppelte Induktivitäten¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Gekoppelte Induktivitäten
Beschreibung	zwei gekoppelte Induktivitäten
Schematic entry	`MUT`
Netlist entry	`Tr`
Typ	AnalogComponent
Bitmap file	mutual
Eigenschaften	3
Category	lumped components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
L1	1 mH	nein	Induktivität der Spule 1
L2	1 mH	nein	Induktivität der Spule 2
k	0.9	nein	Koppelfaktor zwischen Spule 1 und 2

3 Gekoppelte Induktivitäten¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	3 Gekoppelte Induktivitäten
Beschreibung	drei gekoppelte Induktivitäten
Schematic entry	`MUT2`
Netlist entry	`Tr`
Typ	AnalogComponent
Bitmap file	mutual2
Eigenschaften	6
Category	lumped components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
L1	1 mH	nein	Induktivität der Spule 1
L2	1 mH	nein	Induktivität der Spule 2
L3	1 mH	nein	Induktivität der Spule 3
k12	0.9	nein	Koppelfaktor zwischen Spule 1 und 2
k13	0.9	nein	Koppelfaktor zwischen Spule 1 und 3
k23	0.9	nein	Koppelfaktor zwischen Spule 2 und 3

N Mutual Inductors¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	N Mutual Inductors
Beschreibung	several mutual inductors
Schematic entry	`MUTX`
Netlist entry	`Tr`
Typ	AnalogComponent
Bitmap file	mutualx
Eigenschaften	11
Category	lumped components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
coils	4	nein	number of mutual inductances
L1	1 mH	nein	Induktivität der Spule 1
L2	1 mH	nein	Induktivität der Spule 2
L3	1 mH	nein	Induktivität der Spule 3
L4	1 mH	nein	inductance of coil 4
k12	0.9	nein	coupling factor between coil 1 and coil 2
k13	0.9	nein	coupling factor between coil 1 and coil 3
k14	0.9	nein	coupling factor between coil 1 and coil 4
k23	0.9	nein	coupling factor between coil 2 and coil 3
k24	0.9	nein	coupling factor between coil 2 and coil 4
k34	0.9	nein	coupling factor between coil 3 and coil 4

Switch¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Switch
Beschreibung	switch (time controlled)
Schematic entry	`Switch`
Netlist entry	`S`
Typ	AnalogComponent
Bitmap file	switch
Eigenschaften	6
Category	lumped components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
init	off	nein	initial state [on, off]
time	1 ms	nein	time when state changes (semicolon separated list possible, even numbered lists are repeated)
Ron	0	nein	Widerstand im “on”-Zustand in Ohm
Roff	1e12	nein	Widerstand im “off”-Zustand in Ohm
Temp	26.85	nein	Simulationstemperatur in °C
MaxDuration	1e-6	nein	Max possible switch transition time (transition time 1/100 smallest value in ‘time’, or this number)

Relay¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Relay
Beschreibung	relay
Schematic entry	`Relais`
Netlist entry	`S`
Typ	AnalogComponent
Bitmap file	relais
Eigenschaften	5
Category	lumped components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Vt	0.5 V	nein	threshold voltage in Volts
Vh	0.1 V	nein	hysteresis voltage in Volts
Ron	0	nein	resistance of “on” state in Ohms
Roff	1e12	nein	resistance of “off” state in Ohms
Temp	26.85	nein	Simulationstemperatur in °C

Equation Defined Rf Device¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Equation Defined RF Device
Beschreibung	equation defined RF device
Schematic entry	`RFEDD`
Netlist entry	`RF`
Typ	AnalogComponent
Bitmap file	rfedd
Eigenschaften	7
Category	lumped components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Typ	Y	nein	type of parameters [Y, Z, S]
Ports	2	nein	Anzahl der Tore
duringDC	open	nein	representation during DC analysis [open, short, unspecified, zerofrequency]
P11	0	nein	parameter equation 11
P12	0	nein	parameter equation 12
P21	0	nein	parameter equation 21
P22	0	nein	parameter equation 22

Equation Defined 2-Port Rf Device¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Equation Defined 2-port RF Device
Beschreibung	equation defined 2-port RF device
Schematic entry	`RFEDD2P`
Netlist entry	`RF`
Typ	AnalogComponent
Bitmap file	rfedd
Eigenschaften	6
Category	lumped components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Typ	Y	nein	type of parameters [Y, Z, S, H, G, A, T]
duringDC	open	nein	representation during DC analysis [open, short, unspecified, zerofrequency]
P11	0	nein	parameter equation 11
P12	0	nein	parameter equation 12
P21	0	nein	parameter equation 21
P22	0	nein	parameter equation 22

Sources¶

Dc Voltage Source¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	DC Spannungsquelle
Beschreibung	ideale DC Spannungsquelle
Schematic entry	`Vdc`
Netlist entry	`V`
Typ	AnalogComponent
Bitmap file	dc_voltage
Eigenschaften	1
Category	sources

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
U	1 V	ja	Spannung in Volt

Dc Current Source¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	DC Stromquelle
Beschreibung	ideale DC Stromquelle
Schematic entry	`Idc`
Netlist entry	`I`
Typ	AnalogComponent
Bitmap file	dc_current
Eigenschaften	1
Category	sources

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
I	1 mA	ja	Strom in Ampere

Ac Voltage Source¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	AC Spannungsquelle
Beschreibung	ideale AC Spannungsquelle
Schematic entry	`Vac`
Netlist entry	`V`
Typ	AnalogComponent
Bitmap file	ac_voltage
Eigenschaften	4
Category	sources

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
U	1 V	ja	Spitzenwert der Spannung in Volt
f	1 GHz	nein	Frequenz in Hertz
Phase	0	nein	Anfangsphasenverschiebung in Grad
Theta	0	nein	Dämpfungsfaktor (nur für Transientensimulation)

Ac Current Source¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	AC Stromquelle
Beschreibung	ideale AC Stromquelle
Schematic entry	`Iac`
Netlist entry	`I`
Typ	AnalogComponent
Bitmap file	ac_current
Eigenschaften	4
Category	sources

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
I	1 mA	ja	Spitzenwert des Stroms in Ampere
f	1 GHz	nein	Frequenz in Hertz
Phase	0	nein	Anfangsphasenverschiebung in Grad
Theta	0	nein	Dämpfungsfaktor (nur für Transientensimulation)

Signalquelle¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Signalquelle
Beschreibung	AC Signalquelle
Schematic entry	`Pac`
Netlist entry	`P`
Typ	AnalogComponent
Bitmap file	source
Eigenschaften	5
Category	sources

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Num	1	ja	Tornummer
Z	50 Ohm	ja	Torimpedanz
P	0 dBm	nein	(available) ac power in Watts
f	1 GHz	nein	Frequenz in Hertz
Temp	26.85	nein	Simulationstemperatur in °C

Rauschspannungsquelle¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Rauschspannungsquelle
Beschreibung	Rauschspannungsquelle
Schematic entry	`Vnoise`
Netlist entry	`V`
Typ	AnalogComponent
Bitmap file	noise_volt
Eigenschaften	4
Category	sources

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
u	1e-6	ja	spektrale Rauschspannungsleistungsdichte in V²/Hz
e	0	nein	Frequenzexponent
c	1	nein	Frequenzkoeffizient
a	0	nein	additiver Frequenzterm

Rauschstromquelle¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Rauschstromquelle
Beschreibung	Rauschstromquelle
Schematic entry	`Inoise`
Netlist entry	`I`
Typ	AnalogComponent
Bitmap file	noise_current
Eigenschaften	4
Category	sources

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
i	1e-6	ja	spektrale Rauschstromleistungsdichte in A²/Hz
e	0	nein	Frequenzexponent
c	1	nein	Frequenzkoeffizient
a	0	nein	additiver Frequenzterm

spannungsgesteuerte Stromquelle¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	spannungsgesteuerte Stromquelle
Beschreibung	spannungsgesteuerte Stromquelle
Schematic entry	`VCCS`
Netlist entry	`SRC`
Typ	AnalogComponent
Bitmap file	vccs
Eigenschaften	2
Category	sources

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
G	1 S	ja	Vorwärtstranskonduktanz
T	0	nein	Verzögerungszeit

stromgesteuerte Stromquelle¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	stromgesteuerte Stromquelle
Beschreibung	stromgesteuerte Stromquelle
Schematic entry	`CCCS`
Netlist entry	`SRC`
Typ	AnalogComponent
Bitmap file	cccs
Eigenschaften	2
Category	sources

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
G	1	ja	Vorwärtstransferfaktor
T	0	nein	Verzögerungszeit

spannungsgesteuerte Spannungsquelle¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	spannungsgesteuerte Spannungsquelle
Beschreibung	spannungsgesteuerte Spannungsquelle
Schematic entry	`VCVS`
Netlist entry	`SRC`
Typ	AnalogComponent
Bitmap file	vcvs
Eigenschaften	2
Category	sources

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
G	1	ja	Vorwärtstransferfaktor
T	0	nein	Verzögerungszeit

stromgesteuerte Spannungsquelle¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	stromgesteuerte Spannungsquelle
Beschreibung	stromgesteuerte Spannungsquelle
Schematic entry	`CCVS`
Netlist entry	`SRC`
Typ	AnalogComponent
Bitmap file	ccvs
Eigenschaften	2
Category	sources

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
G	1 Ohm	ja	Vorwärtstransferfaktor
T	0	nein	Verzögerungszeit

Spannungspulsquelle¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Spannungspulsquelle
Beschreibung	ideale Spannungspulsquelle
Schematic entry	`Vpulse`
Netlist entry	`V`
Typ	AnalogComponent
Bitmap file	vpulse
Eigenschaften	6
Category	sources

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
U1	0 V	ja	Spannung vor und nach dem Puls
U2	1 V	ja	Spannung während des Pulses
T1	0	ja	Anfangszeit des Pulses
T2	1 ms	ja	Endzeit des Pulses
Tr	1 ns	nein	Anstiegszeit des Pulses
Tf	1 ns	nein	Abfallszeit des Pulses

Strompulsquelle¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Strompulsquelle
Beschreibung	ideale Pulsstromquelle
Schematic entry	`Ipulse`
Netlist entry	`I`
Typ	AnalogComponent
Bitmap file	ipulse
Eigenschaften	6
Category	sources

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
I1	0	ja	Strom vor und nach dem Puls
I2	1 A	ja	Strom während des Pulses
T1	0	ja	Anfangszeit des Pulses
T2	1 ms	ja	Endzeit des Pulses
Tr	1 ns	nein	Anstiegszeit des Pulses
Tf	1 ns	nein	Abfallszeit des Pulses

Rechteckspannungsquelle¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Rechteckspannungsquelle
Beschreibung	ideale Rechteckspannungsquelle
Schematic entry	`Vrect`
Netlist entry	`V`
Typ	AnalogComponent
Bitmap file	vrect
Eigenschaften	6
Category	sources

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
U	1 V	ja	Spannung der High-Level Pulse
TH	1 ms	ja	Dauer der High-Level Pulse
TL	1 ms	ja	Dauer der Low-Level Pulse
Tr	1 ns	nein	Anstiegszeit des Pulses
Tf	1 ns	nein	Abfallszeit des Pulses
Td	0 ns	nein	initial delay time

Rechteckstromquelle¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Rechteckstromquelle
Beschreibung	ideale Rechteckstromquelle
Schematic entry	`Irect`
Netlist entry	`I`
Typ	AnalogComponent
Bitmap file	irect
Eigenschaften	6
Category	sources

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
I	1 mA	ja	Strom während des Rechteckpulses
TH	1 ms	ja	Dauer der High-Level Pulse
TL	1 ms	ja	Dauer der Low-Level Pulse
Tr	1 ns	nein	Anstiegszeit des Pulses
Tf	1 ns	nein	Abfallszeit des Pulses
Td	0 ns	nein	initial delay time

Korrelierte Rauschquellen¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Korrelierte Rauschquellen
Beschreibung	korrelierte Stromquellen
Schematic entry	`IInoise`
Netlist entry	`SRC`
Typ	AnalogComponent
Bitmap file	noise_ii
Eigenschaften	6
Category	sources

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
i1	1e-6	ja	spektrale Rauschstromleistungsdichte der Quelle 1
i2	1e-6	ja	spektrale Rauschstromleistungsdichte der Quelle 2
C	0.5	ja	normierter Korrelationskoeffizient
e	0	nein	Frequenzexponent
c	1	nein	Frequenzkoeffizient
a	0	nein	additiver Frequenzterm

Korrelierte Rauschquellen¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Korrelierte Rauschquellen
Beschreibung	korrelierte Stromquellen
Schematic entry	`VVnoise`
Netlist entry	`SRC`
Typ	AnalogComponent
Bitmap file	noise_vv
Eigenschaften	6
Category	sources

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
v1	1e-6	ja	spektrale Rauschspannungsleistungsdichte der Quelle 1
v2	1e-6	ja	spektrale Rauschspannungsleistungsdichte der Quelle 2
C	0.5	ja	normierter Korrelationskoeffizient
e	0	nein	Frequenzexponent
c	1	nein	Frequenzkoeffizient
a	0	nein	additiver Frequenzterm

Korrelierte Rauschquellen¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Korrelierte Rauschquellen
Beschreibung	korrelierte Stromquellen
Schematic entry	`IVnoise`
Netlist entry	`SRC`
Typ	AnalogComponent
Bitmap file	noise_iv
Eigenschaften	6
Category	sources

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
i1	1e-6	ja	spektrale Rauschstromleistungsdichte der Quelle 1
v2	1e-6	ja	spektrale Rauschspannungsleistungsdichte der Quelle 2
C	0.5	ja	normierter Korrelationskoeffizient
e	0	nein	Frequenzexponent
c	1	nein	Frequenzkoeffizient
a	0	nein	additiver Frequenzterm

Am Modulated Source¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	AM modulierte Quelle
Beschreibung	AC-Spannungsquelle mit Amplitudenmodulator
Schematic entry	`AM_Mod`
Netlist entry	`V`
Typ	AnalogComponent
Bitmap file	am_mod
Eigenschaften	4
Category	sources

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
U	1 V	ja	Spitzenwert der Spannung in Volt
f	1 GHz	nein	Frequenz in Hertz
Phase	0	nein	Anfangsphasenverschiebung in Grad
m	1.0	nein	Modulationsindex

Pm Modulated Source¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	PM modulierte Quelle
Beschreibung	AC-Spannungsquelle mit Phasenmodulator
Schematic entry	`PM_Mod`
Netlist entry	`V`
Typ	AnalogComponent
Bitmap file	pm_mod
Eigenschaften	4
Category	sources

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
U	1 V	ja	Spitzenwert der Spannung in Volt
f	1 GHz	nein	Frequenz in Hertz
Phase	0	nein	Anfangsphasenverschiebung in Grad
M	1.0	nein	Modulationsindex

Exponential Current Pulse¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Exponential Current Pulse
Beschreibung	exponential current source
Schematic entry	`Iexp`
Netlist entry	`I`
Typ	AnalogComponent
Bitmap file	iexp
Eigenschaften	6
Category	sources

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
I1	0	ja	current before rising edge
I2	1 A	ja	maximum current of the pulse
T1	0	ja	start time of the exponentially rising edge
T2	1 ms	ja	start of exponential decay
Tr	1 ns	nein	time constant of the rising edge
Tf	1 ns	nein	time constant of the falling edge

Exponential Voltage Pulse¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Exponential Voltage Pulse
Beschreibung	exponential voltage source
Schematic entry	`Vexp`
Netlist entry	`V`
Typ	AnalogComponent
Bitmap file	vexp
Eigenschaften	6
Category	sources

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
U1	0 V	ja	voltage before rising edge
U2	1 V	ja	maximum voltage of the pulse
T1	0	ja	start time of the exponentially rising edge
T2	1 ms	ja	start of exponential decay
Tr	1 ns	nein	rise time of the rising edge
Tf	1 ns	nein	fall time of the falling edge

File Based Voltage Source¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	File Based Voltage Source
Beschreibung	file based voltage source
Schematic entry	`Vfile`
Netlist entry	`V`
Typ	AnalogComponent
Bitmap file	vfile
Eigenschaften	5
Category	sources

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Datei	vfile.dat	ja	name of the sample file
Interpolator	linear	nein	interpolation type [hold, linear, cubic]
Repeat	nein	nein	repeat waveform [no, yes]
G	1	nein	Spannungsverstärkung
T	0	nein	Verzögerungszeit

File Based Current Source¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	File Based Current Source
Beschreibung	file based current source
Schematic entry	`Ifile`
Netlist entry	`I`
Typ	AnalogComponent
Bitmap file	ifile
Eigenschaften	5
Category	sources

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Datei	ifile.dat	ja	name of the sample file
Interpolator	linear	nein	interpolation type [hold, linear, cubic]
Repeat	nein	nein	repeat waveform [no, yes]
G	1	nein	current gain
T	0	nein	Verzögerungszeit

Probes¶

Amperemeter¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Amperemeter
Beschreibung	Amperemeter
Schematic entry	`IProbe`
Netlist entry	`Pr`
Typ	AnalogComponent
Bitmap file	iprobe
Eigenschaften	0
Category	probes

Voltmeter¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Voltmeter
Beschreibung	Voltmeter
Schematic entry	`VProbe`
Netlist entry	`Pr`
Typ	AnalogComponent
Bitmap file	vprobe
Eigenschaften	0
Category	probes

Transmission Lines¶

Übertragungsstrecke¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Übertragungsstrecke
Beschreibung	ideale Leitung
Schematic entry	`TLIN`
Netlist entry	`Line`
Typ	AnalogComponent
Bitmap file	tline
Eigenschaften	4
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Z	50 Ohm	ja	charakteristische Impedanz
L	1 mm	ja	elektrische Länge der Leitung
Alpha	0 dB	nein	attenuation factor per length in 1/m
Temp	26.85	nein	Simulationstemperatur in °C

4-Terminal Transmission Line¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	4-Terminal Transmission Line
Beschreibung	ideal 4-terminal transmission line
Schematic entry	`TLIN4P`
Netlist entry	`Line`
Typ	AnalogComponent
Bitmap file	tline_4port
Eigenschaften	4
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Z	50 Ohm	ja	charakteristische Impedanz
L	1 mm	ja	elektrische Länge der Leitung
Alpha	0 dB	nein	attenuation factor per length in 1/m
Temp	26.85	nein	Simulationstemperatur in °C

Coupled Transmission Line¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Coupled Transmission Line
Beschreibung	coupled transmission lines
Schematic entry	`CTLIN`
Netlist entry	`Line`
Typ	AnalogComponent
Bitmap file	ctline
Eigenschaften	8
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Ze	50 Ohm	ja	characteristic impedance of even mode
Zo	50 Ohm	ja	characteristic impedance of odd mode
L	1 mm	ja	elektrische Länge der Leitung
Ere	1	nein	relative dielectric constant of even mode
Ero	1	nein	relative dielectric constant of odd mode
Ae	0 dB	nein	attenuation factor per length of even mode
Ao	0 dB	nein	attenuation factor per length of odd mode
Temp	26.85	nein	Simulationstemperatur in °C

Twisted-Pair¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Twisted-Pair
Beschreibung	twisted pair transmission line
Schematic entry	`TWIST`
Netlist entry	`Line`
Typ	AnalogComponent
Bitmap file	twistedpair
Eigenschaften	9
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
d	0.5 mm	ja	diameter of conductor
D	0.8 mm	ja	diameter of wire (conductor and insulator)
L	1.5	ja	physical length of the line
T	100	nein	twists per length in 1/m
er	4	nein	dielectric constant of insulator
mur	1	nein	relative Permeabilität des Leiters
rho	0.022e-6	nein	spezifischer Widerstand des Leiters
tand	4e-4	nein	dielektrischer Verlustwinkel
Temp	26.85	nein	Simulationstemperatur in °C

Koaxialkabel¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Koaxialkabel
Beschreibung	Koaxialleitung
Schematic entry	`COAX`
Netlist entry	`Line`
Typ	AnalogComponent
Bitmap file	coaxial
Eigenschaften	8
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
er	2.29	ja	relative Permittivität des Dielektrikums
rho	0.022e-6	nein	spezifischer Widerstand des Leiters
mur	1	nein	relative Permeabilität des Leiters
D	2.95 mm	nein	innerer Durchmesser des Außenleiters
d	0.9 mm	nein	Durchmesser des Innenleiters
L	1500 mm	ja	mechanische Länge der Leitung
tand	4e-4	nein	dielektrischer Verlustwinkel
Temp	26.85	nein	Simulationstemperatur in °C

Rectangular Waveguide¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Rectangular Waveguide
Beschreibung	Rectangular Waveguide
Schematic entry	`RECTLINE`
Netlist entry	`Line`
Typ	AnalogComponent
Bitmap file	rectline
Eigenschaften	9
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
a	2.95 mm	ja	widest side
b	0.9 mm	ja	shortest side
L	1500 mm	ja	mechanische Länge der Leitung
er	1	nein	relative Permittivität des Dielektrikums
mur	1	nein	relative Permeabilität des Leiters
tand	0	nein	dielektrischer Verlustwinkel
rho	0.022e-6	nein	spezifischer Widerstand des Leiters
Temp	26.85	nein	Simulationstemperatur in °C
Material	unspecified	nein	material parameter for temperature model [unspecified, Copper, StainlessSteel, Gold]

Rlcg Transmission Line¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	RLCG Transmission Line
Beschreibung	RLCG transmission line
Schematic entry	`RLCG`
Netlist entry	`Line`
Typ	AnalogComponent
Bitmap file	rlcg
Eigenschaften	6
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
R	0.0	nein	resistive load (Ohm/m)
L	0.6e-6	ja	inductive load (H/m)
C	240e-12	ja	capacitive load (F/m)
G	0.0	nein	conductive load (S/m)
Länge	1 mm	ja	elektrische Länge der Leitung
Temp	26.85	nein	Simulationstemperatur in °C

Substrat¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Substrat
Beschreibung	Substratdefinition
Schematic entry	`SUBST`
Netlist entry	`Subst`
Typ	AnalogComponent
Bitmap file	Substrat
Eigenschaften	6
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
er	9.8	ja	relative Permeabilität
h	1 mm	ja	Höhe in Metern
t	35 um	ja	Metallisierungsdicke
tand	2e-4	ja	dielektrischer Verlustwinkel
rho	0.022e-6	ja	spezifischer Widerstand des Metalls
D	0.15e-6	ja	effektive Oberflächenrauhtiefe

Mikrostreifenleitung¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Mikrostreifenleitung
Beschreibung	Mikrostreifenleitung
Schematic entry	`MLIN`
Netlist entry	`MS`
Typ	AnalogComponent
Bitmap file	msline
Eigenschaften	6
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Subst	Subst1	ja	Name der Substratdefinition
W	1 mm	ja	Leitungsbreite
L	10 mm	ja	Leitungslänge
Model	Hammerstad	nein	quasi-static microstrip model [Hammerstad, Wheeler, Schneider]
DispModel	Kirschning	nein	microstrip dispersion model [Kirschning, Kobayashi, Yamashita, Hammerstad, Getsinger, Schneider, Pramanick]
Temp	26.85	nein	Simulationstemperatur in °C

gekoppelte Mikrostreifenleitung¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	gekoppelte Mikrostreifenleitung
Beschreibung	gekoppelte Mikrostreifenleitung
Schematic entry	`MCOUPLED`
Netlist entry	`MS`
Typ	AnalogComponent
Bitmap file	mscoupled
Eigenschaften	7
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Subst	Subst1	ja	Name der Substratdefinition
W	1 mm	ja	Leitungsbreite
L	10 mm	ja	Leitungslänge
S	1 mm	ja	Abstand zwischen den Leitungen
Model	Kirschning	nein	microstrip model [Kirschning, Hammerstad]
DispModel	Kirschning	nein	microstrip dispersion model [Kirschning, Getsinger]
Temp	26.85	nein	Simulationstemperatur in °C

Microstrip Lange Coupler¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Microstrip Lange Coupler
Beschreibung	microstrip lange coupler
Schematic entry	`MLANGE`
Netlist entry	`MS`
Typ	AnalogComponent
Bitmap file	mslange
Eigenschaften	7
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Subst	Subst1	ja	Name der Substratdefinition
W	1 mm	ja	Leitungsbreite
L	10 mm	ja	Leitungslänge
S	1 mm	ja	Abstand zwischen den Leitungen
Model	Kirschning	nein	microstrip model [Kirschning, Hammerstad]
DispModel	Kirschning	nein	microstrip dispersion model [Kirschning, Getsinger]
Temp	26.85	nein	Simulationstemperatur in °C

Mikrostreifenwinkel¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Mikrostreifenwinkel
Beschreibung	Mikrostreifenwinkel
Schematic entry	`MCORN`
Netlist entry	`MS`
Typ	AnalogComponent
Bitmap file	mscorner
Eigenschaften	2
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Subst	Subst1	ja	Substrat
W	1 mm	ja	Streifenbreite

Abgeflachter Mikrostreifenwinkel¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Abgeflachter Mikrostreifenwinkel
Beschreibung	abgeflachter Mikrostreifenwinkel
Schematic entry	`MMBEND`
Netlist entry	`MS`
Typ	AnalogComponent
Bitmap file	msmbend
Eigenschaften	2
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Subst	Subst1	ja	Substrat
W	1 mm	ja	Streifenbreite

Mikrostreifenabsatz¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Mikrostreifenabsatz
Beschreibung	Mikrostreifenabsatz
Schematic entry	`MSTEP`
Netlist entry	`MS`
Typ	AnalogComponent
Bitmap file	msstep
Eigenschaften	5
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Subst	Subst1	ja	Substrat
W1	2 mm	ja	Breite der Leitung 1
W2	1 mm	ja	Breite der Leitung 2
MSModel	Hammerstad	nein	quasi-static microstrip model [Hammerstad, Wheeler, Schneider]
MSDispModel	Kirschning	nein	microstrip dispersion model [Kirschning, Kobayashi, Yamashita, Hammerstad, Getsinger, Schneider, Pramanick]

Mikrostreifen T-Verzweigung¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Mikrostreifen T-Verzweigung
Beschreibung	T-Verzweigung einer Mikrostreifenleitung
Schematic entry	`MTEE`
Netlist entry	`MS`
Typ	AnalogComponent
Bitmap file	mstee
Eigenschaften	8
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Subst	Subst1	ja	Substrat
W1	1 mm	ja	Leitungsbreite 1
W2	1 mm	ja	Leitungsbreite 2
W3	2 mm	ja	Leitungsbreite 3
MSModel	Hammerstad	nein	quasi-static microstrip model [Hammerstad, Wheeler, Schneider]
MSDispModel	Kirschning	nein	microstrip dispersion model [Kirschning, Kobayashi, Yamashita, Hammerstad, Getsinger, Schneider, Pramanick]
Temp	26.85	nein	Temperatur in °C
Symbol	showNumbers	nein	show port numbers in symbol or not [showNumbers, noNumbers]

Mikrostreifenkreuzung¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Mikrostreifenkreuzung
Beschreibung	Mikrostreifenkreuzung
Schematic entry	`MCROSS`
Netlist entry	`MS`
Typ	AnalogComponent
Bitmap file	mscross
Eigenschaften	8
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Subst	Subst1	ja	Substrat
W1	1 mm	ja	Leitungsbreite 1
W2	2 mm	ja	Leitungsbreite 2
W3	1 mm	ja	Leitungsbreite 3
W4	2 mm	ja	Leitungsbreite 4
MSModel	Hammerstad	nein	quasi-static microstrip model [Hammerstad, Wheeler, Schneider]
MSDispModel	Kirschning	nein	microstrip dispersion model [Kirschning, Kobayashi, Yamashita, Hammerstad, Getsinger, Schneider, Pramanick]
Symbol	showNumbers	nein	show port numbers in symbol or not [showNumbers, noNumbers]

Offene Mikrostreifenleitung¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Offene Mikrostreifenleitung
Beschreibung	offenen Mikrostreifenleitung
Schematic entry	`MOPEN`
Netlist entry	`MS`
Typ	AnalogComponent
Bitmap file	msopen
Eigenschaften	5
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Subst	Subst1	ja	Name der Substratdefinition
W	1 mm	ja	Leitungsbreite
MSModel	Hammerstad	nein	quasi-static microstrip model [Hammerstad, Wheeler, Schneider]
MSDispModel	Kirschning	nein	microstrip dispersion model [Kirschning, Kobayashi, Yamashita, Hammerstad, Getsinger, Schneider, Pramanick]
Model	Kirschning	nein	microstrip open end model [Kirschning, Hammerstad, Alexopoulos]

Mikrostreifenlücke¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Mikrostreifenlücke
Beschreibung	Mikrostreifenlücke
Schematic entry	`MGAP`
Netlist entry	`MS`
Typ	AnalogComponent
Bitmap file	msgap
Eigenschaften	6
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Subst	Subst1	ja	Name der Substratdefinition
W1	1 mm	ja	Breite der Leitung 1
W2	1 mm	ja	Breite der Leitung 2
S	1 mm	ja	Abstand zwischen den Mikrostreifenenden
MSModel	Hammerstad	nein	quasi-static microstrip model [Hammerstad, Wheeler, Schneider]
MSDispModel	Kirschning	nein	microstrip dispersion model [Kirschning, Kobayashi, Yamashita, Hammerstad, Getsinger, Schneider, Pramanick]

Mikrostreifendurchkontaktierung¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Mikrostreifendurchkontaktierung
Beschreibung	Mikrostreifendurchkontaktierung
Schematic entry	`MVIA`
Netlist entry	`MS`
Typ	AnalogComponent
Bitmap file	msvia
Eigenschaften	3
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Subst	Subst1	ja	Substrat
D	1 mm	ja	Durchmesser der runden Durchkontaktierung
Temp	26.85	nein	Simulationstemperatur in °C

Microstrip Radial Stub¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Microstrip Radial Stub
Beschreibung	microstrip radial stub
Schematic entry	`MRSTUB`
Netlist entry	`MS`
Typ	AnalogComponent
Bitmap file	msrstub
Eigenschaften	4
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Subst	Subst1	ja	Name der Substratdefinition
ri	1 mm	nein	inner radius
ro	10 mm	ja	outer radius
alpha	90	ja	stub angle (degrees)

Koplanarleitung¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Koplanarleitung
Beschreibung	Koplanarleitung
Schematic entry	`CLIN`
Netlist entry	`CL`
Typ	AnalogComponent
Bitmap file	coplanar
Eigenschaften	6
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Subst	Subst1	ja	Name der Substratdefinition
W	1 mm	ja	Leitungsbreite
S	1 mm	ja	Schlitzbreite
L	10 mm	ja	Leitungslänge
Backside	Air	nein	material at the backside of the substrate [Metal, Air]
Approx	ja	nein	use approximation instead of precise equation [yes, no]

Offene Koplanarleitung¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Offene Koplanarleitung
Beschreibung	offene Koplanarleitung
Schematic entry	`COPEN`
Netlist entry	`CL`
Typ	AnalogComponent
Bitmap file	cpwopen
Eigenschaften	5
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Subst	Subst1	ja	Name der Substratdefinition
W	1 mm	ja	Leitungsbreite
S	1 mm	ja	Schlitzbreite
G	5 mm	ja	Spaltbreite am Ende der Leitung
Backside	Air	nein	material at the backside of the substrate [Metal, Air]

Kurzgeschlossene Koplanarleitung¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Kurzgeschlossene Koplanarleitung
Beschreibung	kurzgeschlossene Koplanarleitung
Schematic entry	`CSHORT`
Netlist entry	`CL`
Typ	AnalogComponent
Bitmap file	cpwshort
Eigenschaften	4
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Subst	Subst1	ja	Name der Substratdefinition
W	1 mm	ja	Leitungsbreite
S	1 mm	ja	Schlitzbreite
Backside	Air	nein	material at the backside of the substrate [Metal, Air]

Koplanarlücke¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Koplanarlücke
Beschreibung	Koplanarlücke
Schematic entry	`CGAP`
Netlist entry	`CL`
Typ	AnalogComponent
Bitmap file	cpwgap
Eigenschaften	4
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Subst	Subst1	ja	Name der Substratdefinition
W	1 mm	ja	Leitungsbreite
S	1 mm	ja	Schlitzbreite
G	0.5 mm	ja	Abstand zwischen den Koplanarleitungsenden

Koplanarabsatz¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Koplanarabsatz
Beschreibung	Koplanarabsatz
Schematic entry	`CSTEP`
Netlist entry	`CL`
Typ	AnalogComponent
Bitmap file	cpwstep
Eigenschaften	5
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Subst	Subst1	ja	Name der Substratdefinition
W1	1 mm	ja	Leitungsbreite 1
W2	2 mm	ja	Leitungsbreite 2
S	3 mm	ja	Abstand zwischen den Masseebenen
Backside	Air	nein	material at the backside of the substrate [Metal, Air]

Bond Wire¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Bond Wire
Beschreibung	bond wire
Schematic entry	`BOND`
Netlist entry	`Line`
Typ	AnalogComponent
Bitmap file	bondwire
Eigenschaften	8
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
L	3 mm	ja	length of the wire
D	50 um	ja	diameter of the wire
H	2 mm	ja	height above ground plane
rho	0.022e-6	nein	specific resistance of the metal
mur	1	nein	relative permeability of the metal
Model	FREESPACE	nein	bond wire model [FREESPACE, MIRROR, DESCHARLES]
Subst	Subst1	ja	Substrat
Temp	26.85	nein	Simulationstemperatur in °C

Nonlinear Components¶

Diode¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Diode
Beschreibung	Diode
Schematic entry	`Diode`
Netlist entry	`D`
Typ	AnalogComponent
Bitmap file	Diode
Eigenschaften	29
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Is	1e-15 A	ja	Sättigungsstrom
N	1	ja	Idealiätsfaktor
Cj0	10 fF	ja	Sperrschichtkapazität bei 0 Volt
M	0.5	nein	Gradationskoeffizient
Vj	0.7 V	nein	Sperrschichtpotential
Fc	0.5	nein	Sperrschichtkapazitäts-Linearisierungskoeffizient
Cp	0.0 fF	nein	konstante Parallelkapazität
Isr	0.0	nein	Rekombinationsstromparameter
Nr	2.0	nein	Emissionskoeffizient von Isr
Rs	0.0 Ohm	nein	ohmscher Serienwiderstand
Tt	0.0 ps	nein	Transitzeit
Ikf	0	nein	high-injection knee current (0=infinity)
Kf	0.0	nein	1/f-Rauschkoeffizient
Af	1.0	nein	1/f-Rauschexponent
Ffe	1.0	nein	Frequenzexponent für 1/f-Rauschen
Bv	0	nein	Durchbruchspannung rückwärts
Ibv	1 mA	nein	Strom bei der Durchbruchspannung im Rückwärtsbetrieb
Temp	26.85	nein	Simulationstemperatur in °C
Xti	3.0	nein	Temperaturexponent des Sättigungsstroms
Eg	1.11	nein	Bandabstand in eV
Tbv	0.0	nein	linearer Temperaturkoeffizient von Bv
Trs	0.0	nein	linearer Temperaturkoeffizient von Rs
Ttt1	0.0	nein	linearer Temperaturkoeffizient von Tt
Ttt2	0.0	nein	quadratischer Temperaturkoeffizient von Tt
Tm1	0.0	nein	linearer Temperaturkoeffizient von M
Tm2	0.0	nein	quadratischer Temperaturkoeffizient von M
Tnom	26.85	nein	Temperatur bei der die Modellparameter extrahiert wurden
Area	1.0	nein	Skalierungsfaktor der Diode
Symbol	normal	nein	schematic symbol [normal, US, Schottky, Zener, Varactor]

Npn Transistor¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	npn Transistor
Beschreibung	Bipolartransistor
Schematic entry	`_BJT`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	npn
Eigenschaften	48
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Typ	npn	ja	polarity [npn, pnp]
Is	1e-16	ja	Sättigungsstrom
Nf	1	ja	Vorwärtsemissionskoeffizient
Nr	1	nein	Rückwärtsemissionskoeffizient
Ikf	0	nein	Knickstrom für Vorwärtstransferstrom
Ikr	0	nein	Knickstrom für Rückwärtstransferstrom
Vaf	0	ja	Early-Spannung vorwärts
Var	0	nein	Early-Spannung rückwärts
Ise	0	nein	nichtidealer Basis-Emitter-Sättigungsstrom
Ne	1.5	nein	Emissionsfaktor für nichtidealen BE-Diodenstrom
Isc	0	nein	nichtidealer Basis-Kollektor-Sättigungsstrom
Nc	2	nein	Emissionsfaktor für nichtidealen BC-Diodenstrom
Bf	100	ja	ideale Vorwärtsstromverstärkung
Br	1	nein	ideale Rückwärtsstromverstärkung
Rbm	0	nein	minimaler Basiswiderstand bei großen Strömen
Irb	0	nein	Basisstrom für Basisbahnwiderstandsmitte
Rc	0	nein	Kollektorwiderstand
Re	0	nein	Emitterwiderstand
Rb	0	nein	konstanter Basisbahnwiderstand
Cje	0	nein	BE-Sperrschichtkapazität bei 0V
Vje	0.75	nein	BE-Diffusionsspannung
Mje	0.33	nein	BE-Gradationskoeffizient
Cjc	0	nein	BC-Sperrschichtkapazität bei 0V
Vjc	0.75	nein	BC-Diffusionsspannung
Mjc	0.33	nein	BC-Gradationskoeffizient
Xcjc	1.0	nein	BC-Aufteilungsfaktor
Cjs	0	nein	CS-Sperrschichtkapazität bei 0V
Vjs	0.75	nein	CS-Diffusionsspannung
Mjs	0	nein	CS-Gradationskoeffizient
Fc	0.5	nein	Sperrschichtkapazitäts-Linearisierungskoeffizient
Tf	0.0	nein	ideale Vorwärtstransitzeit
Xtf	0.0	nein	Koeffizient für Stromabhängigkeit von Tf
Vtf	0.0	nein	Koeffizient für Spannungsabhängigkeit von Tf
Itf	0.0	nein	Bezugsstrom für Stromabhängigkeit von Tf
Tr	0.0	nein	ideale Rückwärtstransitzeit
Temp	26.85	nein	Simulationstemperatur in °C
Kf	0.0	nein	1/f-Rauschkoeffizient
Af	1.0	nein	1/f-Rauschexponent
Ffe	1.0	nein	Frequenzexponent für 1/f-Rauschen
Kb	0.0	nein	Burst-Rauschkoeffizient
Ab	1.0	nein	Burst-Rauschexponent
Fb	1.0	nein	Grenzfrequenz für das Burst-Rauschen in Hertz
Ptf	0.0	nein	Zusatzphase in Grad
Xtb	0.0	nein	Temperaturexponent für die Vorwärts- und Rückwärtsverstärkung
Xti	3.0	nein	Temperaturexponent des Sättigungsstroms
Eg	1.11	nein	Bandabstand in eV
Tnom	26.85	nein	Temperatur bei der die Modellparameter extrahiert wurden
Area	1.0	nein	Flächenfaktor für den Bipolartransistor

Pnp Transistor¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	pnp Transistor
Beschreibung	Bipolartransistor
Schematic entry	`_BJT`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	pnp
Eigenschaften	48
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Typ	pnp	ja	polarity [npn, pnp]
Is	1e-16	ja	Sättigungsstrom
Nf	1	ja	Vorwärtsemissionskoeffizient
Nr	1	nein	Rückwärtsemissionskoeffizient
Ikf	0	nein	Knickstrom für Vorwärtstransferstrom
Ikr	0	nein	Knickstrom für Rückwärtstransferstrom
Vaf	0	ja	Early-Spannung vorwärts
Var	0	nein	Early-Spannung rückwärts
Ise	0	nein	nichtidealer Basis-Emitter-Sättigungsstrom
Ne	1.5	nein	Emissionsfaktor für nichtidealen BE-Diodenstrom
Isc	0	nein	nichtidealer Basis-Kollektor-Sättigungsstrom
Nc	2	nein	Emissionsfaktor für nichtidealen BC-Diodenstrom
Bf	100	ja	ideale Vorwärtsstromverstärkung
Br	1	nein	ideale Rückwärtsstromverstärkung
Rbm	0	nein	minimaler Basiswiderstand bei großen Strömen
Irb	0	nein	Basisstrom für Basisbahnwiderstandsmitte
Rc	0	nein	Kollektorwiderstand
Re	0	nein	Emitterwiderstand
Rb	0	nein	konstanter Basisbahnwiderstand
Cje	0	nein	BE-Sperrschichtkapazität bei 0V
Vje	0.75	nein	BE-Diffusionsspannung
Mje	0.33	nein	BE-Gradationskoeffizient
Cjc	0	nein	BC-Sperrschichtkapazität bei 0V
Vjc	0.75	nein	BC-Diffusionsspannung
Mjc	0.33	nein	BC-Gradationskoeffizient
Xcjc	1.0	nein	BC-Aufteilungsfaktor
Cjs	0	nein	CS-Sperrschichtkapazität bei 0V
Vjs	0.75	nein	CS-Diffusionsspannung
Mjs	0	nein	CS-Gradationskoeffizient
Fc	0.5	nein	Sperrschichtkapazitäts-Linearisierungskoeffizient
Tf	0.0	nein	ideale Vorwärtstransitzeit
Xtf	0.0	nein	Koeffizient für Stromabhängigkeit von Tf
Vtf	0.0	nein	Koeffizient für Spannungsabhängigkeit von Tf
Itf	0.0	nein	Bezugsstrom für Stromabhängigkeit von Tf
Tr	0.0	nein	ideale Rückwärtstransitzeit
Temp	26.85	nein	Simulationstemperatur in °C
Kf	0.0	nein	1/f-Rauschkoeffizient
Af	1.0	nein	1/f-Rauschexponent
Ffe	1.0	nein	Frequenzexponent für 1/f-Rauschen
Kb	0.0	nein	Burst-Rauschkoeffizient
Ab	1.0	nein	Burst-Rauschexponent
Fb	1.0	nein	Grenzfrequenz für das Burst-Rauschen in Hertz
Ptf	0.0	nein	Zusatzphase in Grad
Xtb	0.0	nein	Temperaturexponent für die Vorwärts- und Rückwärtsverstärkung
Xti	3.0	nein	Temperaturexponent des Sättigungsstroms
Eg	1.11	nein	Bandabstand in eV
Tnom	26.85	nein	Temperatur bei der die Modellparameter extrahiert wurden
Area	1.0	nein	Flächenfaktor für den Bipolartransistor

Npn Transistor¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	npn Transistor
Beschreibung	Bipolartransistor mit Substratanschluss
Schematic entry	`BJT`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	npnsub
Eigenschaften	48
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Typ	npn	ja	polarity [npn, pnp]
Is	1e-16	ja	Sättigungsstrom
Nf	1	ja	Vorwärtsemissionskoeffizient
Nr	1	nein	Rückwärtsemissionskoeffizient
Ikf	0	nein	Knickstrom für Vorwärtstransferstrom
Ikr	0	nein	Knickstrom für Rückwärtstransferstrom
Vaf	0	ja	Early-Spannung vorwärts
Var	0	nein	Early-Spannung rückwärts
Ise	0	nein	nichtidealer Basis-Emitter-Sättigungsstrom
Ne	1.5	nein	Emissionsfaktor für nichtidealen BE-Diodenstrom
Isc	0	nein	nichtidealer Basis-Kollektor-Sättigungsstrom
Nc	2	nein	Emissionsfaktor für nichtidealen BC-Diodenstrom
Bf	100	ja	ideale Vorwärtsstromverstärkung
Br	1	nein	ideale Rückwärtsstromverstärkung
Rbm	0	nein	minimaler Basiswiderstand bei großen Strömen
Irb	0	nein	Basisstrom für Basisbahnwiderstandsmitte
Rc	0	nein	Kollektorwiderstand
Re	0	nein	Emitterwiderstand
Rb	0	nein	konstanter Basisbahnwiderstand
Cje	0	nein	BE-Sperrschichtkapazität bei 0V
Vje	0.75	nein	BE-Diffusionsspannung
Mje	0.33	nein	BE-Gradationskoeffizient
Cjc	0	nein	BC-Sperrschichtkapazität bei 0V
Vjc	0.75	nein	BC-Diffusionsspannung
Mjc	0.33	nein	BC-Gradationskoeffizient
Xcjc	1.0	nein	BC-Aufteilungsfaktor
Cjs	0	nein	CS-Sperrschichtkapazität bei 0V
Vjs	0.75	nein	CS-Diffusionsspannung
Mjs	0	nein	CS-Gradationskoeffizient
Fc	0.5	nein	Sperrschichtkapazitäts-Linearisierungskoeffizient
Tf	0.0	nein	ideale Vorwärtstransitzeit
Xtf	0.0	nein	Koeffizient für Stromabhängigkeit von Tf
Vtf	0.0	nein	Koeffizient für Spannungsabhängigkeit von Tf
Itf	0.0	nein	Bezugsstrom für Stromabhängigkeit von Tf
Tr	0.0	nein	ideale Rückwärtstransitzeit
Temp	26.85	nein	Simulationstemperatur in °C
Kf	0.0	nein	1/f-Rauschkoeffizient
Af	1.0	nein	1/f-Rauschexponent
Ffe	1.0	nein	Frequenzexponent für 1/f-Rauschen
Kb	0.0	nein	Burst-Rauschkoeffizient
Ab	1.0	nein	Burst-Rauschexponent
Fb	1.0	nein	Grenzfrequenz für das Burst-Rauschen in Hertz
Ptf	0.0	nein	Zusatzphase in Grad
Xtb	0.0	nein	Temperaturexponent für die Vorwärts- und Rückwärtsverstärkung
Xti	3.0	nein	Temperaturexponent des Sättigungsstroms
Eg	1.11	nein	Bandabstand in eV
Tnom	26.85	nein	Temperatur bei der die Modellparameter extrahiert wurden
Area	1.0	nein	Flächenfaktor für den Bipolartransistor

Pnp Transistor¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	pnp Transistor
Beschreibung	Bipolartransistor mit Substratanschluss
Schematic entry	`BJT`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	pnpsub
Eigenschaften	48
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Typ	pnp	ja	polarity [npn, pnp]
Is	1e-16	ja	Sättigungsstrom
Nf	1	ja	Vorwärtsemissionskoeffizient
Nr	1	nein	Rückwärtsemissionskoeffizient
Ikf	0	nein	Knickstrom für Vorwärtstransferstrom
Ikr	0	nein	Knickstrom für Rückwärtstransferstrom
Vaf	0	ja	Early-Spannung vorwärts
Var	0	nein	Early-Spannung rückwärts
Ise	0	nein	nichtidealer Basis-Emitter-Sättigungsstrom
Ne	1.5	nein	Emissionsfaktor für nichtidealen BE-Diodenstrom
Isc	0	nein	nichtidealer Basis-Kollektor-Sättigungsstrom
Nc	2	nein	Emissionsfaktor für nichtidealen BC-Diodenstrom
Bf	100	ja	ideale Vorwärtsstromverstärkung
Br	1	nein	ideale Rückwärtsstromverstärkung
Rbm	0	nein	minimaler Basiswiderstand bei großen Strömen
Irb	0	nein	Basisstrom für Basisbahnwiderstandsmitte
Rc	0	nein	Kollektorwiderstand
Re	0	nein	Emitterwiderstand
Rb	0	nein	konstanter Basisbahnwiderstand
Cje	0	nein	BE-Sperrschichtkapazität bei 0V
Vje	0.75	nein	BE-Diffusionsspannung
Mje	0.33	nein	BE-Gradationskoeffizient
Cjc	0	nein	BC-Sperrschichtkapazität bei 0V
Vjc	0.75	nein	BC-Diffusionsspannung
Mjc	0.33	nein	BC-Gradationskoeffizient
Xcjc	1.0	nein	BC-Aufteilungsfaktor
Cjs	0	nein	CS-Sperrschichtkapazität bei 0V
Vjs	0.75	nein	CS-Diffusionsspannung
Mjs	0	nein	CS-Gradationskoeffizient
Fc	0.5	nein	Sperrschichtkapazitäts-Linearisierungskoeffizient
Tf	0.0	nein	ideale Vorwärtstransitzeit
Xtf	0.0	nein	Koeffizient für Stromabhängigkeit von Tf
Vtf	0.0	nein	Koeffizient für Spannungsabhängigkeit von Tf
Itf	0.0	nein	Bezugsstrom für Stromabhängigkeit von Tf
Tr	0.0	nein	ideale Rückwärtstransitzeit
Temp	26.85	nein	Simulationstemperatur in °C
Kf	0.0	nein	1/f-Rauschkoeffizient
Af	1.0	nein	1/f-Rauschexponent
Ffe	1.0	nein	Frequenzexponent für 1/f-Rauschen
Kb	0.0	nein	Burst-Rauschkoeffizient
Ab	1.0	nein	Burst-Rauschexponent
Fb	1.0	nein	Grenzfrequenz für das Burst-Rauschen in Hertz
Ptf	0.0	nein	Zusatzphase in Grad
Xtb	0.0	nein	Temperaturexponent für die Vorwärts- und Rückwärtsverstärkung
Xti	3.0	nein	Temperaturexponent des Sättigungsstroms
Eg	1.11	nein	Bandabstand in eV
Tnom	26.85	nein	Temperatur bei der die Modellparameter extrahiert wurden
Area	1.0	nein	Flächenfaktor für den Bipolartransistor

N-Jfet¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	n-JFET
Beschreibung	Feldeffekttransistor mit pn-Übergängen
Schematic entry	`JFET`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	nfet
Eigenschaften	24
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Typ	nfet	ja	polarity [nfet, pfet]
Vt0	-2.0 V	ja	Schwellspannung
Beta	1e-4	ja	Transkonduktanzparameter
Lambda	0.0	ja	Parameter für die Kanallängenmodulation
Rd	0.0	nein	parasitärer Drainwiderstand
Rs	0.0	nein	parasitärer Sourcewiderstand
Is	1e-14	nein	Sättigungsstrom des Gateübergangs
N	1.0	nein	Idealitätsfaktor des Gateübergangs
Isr	1e-14	nein	Emissionsfaktor für nichtidealen Gatestrom
Nr	2.0	nein	Isr Emissionsfaktor
Cgs	0.0	nein	Gate-Source-Sperrschichtkapazität bei 0 Volt
Cgd	0.0	nein	Gate-Drain-Sperrschichtkapazität bei 0 Volt
Pb	1.0	nein	Sperrschichtpotential des Gateübergangs
Fc	0.5	nein	Sperrschichtkapazitäts-Linearisierungskoeffizient
M	0.5	nein	Gradationskoeffizient des Gateübergangs
Kf	0.0	nein	1/f-Rauschkoeffizient
Af	1.0	nein	1/f-Rauschexponent
Ffe	1.0	nein	Frequenzexponent für 1/f-Rauschen
Temp	26.85	nein	Simulationstemperatur in °C
Xti	3.0	nein	Temperaturexponent des Sättigungsstroms
Vt0tc	0.0	nein	Temperaturkoeffizient von Vt0
Betatce	0.0	nein	exponentieller Temperaturkoeffizient von Beta
Tnom	26.85	nein	Temperatur bei der die Modellparameter extrahiert wurden
Area	1.0	nein	Flächenfaktor für den JFET

P-Jfet¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	p-JFET
Beschreibung	Feldeffekttransistor mit pn-Übergängen
Schematic entry	`JFET`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	pfet
Eigenschaften	24
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Typ	pfet	ja	polarity [nfet, pfet]
Vt0	-2.0 V	ja	Schwellspannung
Beta	1e-4	ja	Transkonduktanzparameter
Lambda	0.0	ja	Parameter für die Kanallängenmodulation
Rd	0.0	nein	parasitärer Drainwiderstand
Rs	0.0	nein	parasitärer Sourcewiderstand
Is	1e-14	nein	Sättigungsstrom des Gateübergangs
N	1.0	nein	Idealitätsfaktor des Gateübergangs
Isr	1e-14	nein	Emissionsfaktor für nichtidealen Gatestrom
Nr	2.0	nein	Isr Emissionsfaktor
Cgs	0.0	nein	Gate-Source-Sperrschichtkapazität bei 0 Volt
Cgd	0.0	nein	Gate-Drain-Sperrschichtkapazität bei 0 Volt
Pb	1.0	nein	Sperrschichtpotential des Gateübergangs
Fc	0.5	nein	Sperrschichtkapazitäts-Linearisierungskoeffizient
M	0.5	nein	Gradationskoeffizient des Gateübergangs
Kf	0.0	nein	1/f-Rauschkoeffizient
Af	1.0	nein	1/f-Rauschexponent
Ffe	1.0	nein	Frequenzexponent für 1/f-Rauschen
Temp	26.85	nein	Simulationstemperatur in °C
Xti	3.0	nein	Temperaturexponent des Sättigungsstroms
Vt0tc	0.0	nein	Temperaturkoeffizient von Vt0
Betatce	0.0	nein	exponentieller Temperaturkoeffizient von Beta
Tnom	26.85	nein	Temperatur bei der die Modellparameter extrahiert wurden
Area	1.0	nein	Flächenfaktor für den JFET

N-Mosfet¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	n-MOSFET
Beschreibung	MOS Feldeffekttransistor
Schematic entry	`_MOSFET`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	nmosfet
Eigenschaften	44
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Typ	nfet	nein	polarity [nfet, pfet]
Vt0	1.0 V	ja	Null-Schwellenspannung
Kp	2e-5	ja	Übertragungsleitwert-Parameter in A/V²
Gamma	0.0	nein	Substrat-Schwellenspannungs-Parameter in sqrt(V)
Phi	0.6 V	nein	Oberflächenpotential
Lambda	0.0	ja	Parameter für die Kanallängenmodulation in 1/V
Rd	0.0 Ohm	nein	Drain-Bahnwiderstand
Rs	0.0 Ohm	nein	Source-Bahnwiderstand
Rg	0.0 Ohm	nein	ohmscher Widerstand des Gate-Metallkontaktes
Is	1e-14 A	nein	Substrat-Sperrsättigungsstrom
N	1.0	nein	Emissionsfaktor des Substrat-Übergangs
W	1 um	nein	Kanalbreite
L	1 um	nein	Kanallänge
Ld	0.0	nein	Gate-Diffusionsüberlappung
Tox	0.1 um	nein	Oxiddicke
Cgso	0.0	nein	GS-Überlappungskapazität je Kanalbreite in F/m
Cgdo	0.0	nein	GD-Überlappungskapazität je Kanalbreite in F/m
Cgbo	0.0	nein	GB-Überlappungskapazität je Kanallänge in F/m
Cbd	0.0 F	nein	Null-BD-Sperrschichtkapazität
Cbs	0.0 F	nein	Null-BS-Sperrschichtkapazität
Pb	0.8 V	nein	Substrat-Sperrschicht-Diffusionsspannung
Mj	0.5	nein	Substratboden-Sperrschicht-Gradationsexponent
Fc	0.5	nein	Koeffizient für Durchlassbereich der Sperrschichtkapazität
Cjsw	0.0	nein	Null-Substrat-Seitenwandkapazität je Sperrschichtumfang in F/m
Mjsw	0.33	nein	Substratseitenwand-Sperrschicht-Gradationskoeffizient
Tt	0.0 ps	nein	Transitzeit durch das Substrat
Nsub	0.0	nein	Substrat-Dotierungsdichte in 1/cm³
Nss	0.0	nein	Oberflächenladungsdichte-Koeffizient in 1/cm²
Tpg	1	nein	Typ des Gate-Materials: 0 = Aluminium; -1 = wie Substrat; 1 = Gegenteil von Substrat
Uo	600.0	nein	Oberflächenbeweglichkeit in cm²/Vs
Rsh	0.0	nein	Diffusionsflächenwiderstand von Drain und Source in Ohm/Quadrat
Nrd	1	nein	Drain-Flächenfaktor
Nrs	1	nein	Source-Flächenfaktor
Cj	0.0	nein	Null-Substratbodenkapazität je Sperrschichtfläche in F/m²
Js	0.0	nein	Substrat-Sperrsättigungsstromdichte in A/m²
Ad	0.0	nein	Drain-Diffusionsfläche in m²
As	0.0	nein	Source-Diffusionsfläche in m²
Pd	0.0 m	nein	Umfang der Drain-Sperrschicht
Ps	0.0 m	nein	Umfang der Source-Sperrschicht
Kf	0.0	nein	1/f-Rauschkoeffizient
Af	1.0	nein	1/f-Rauschexponent
Ffe	1.0	nein	Frequenzexponent für 1/f-Rauschen
Temp	26.85	nein	Simulationstemperatur in °C
Tnom	26.85	nein	Temperatur bei der die Modellparameter gemessen wurden

P-Mosfet¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	p-MOSFET
Beschreibung	MOS Feldeffekttransistor
Schematic entry	`_MOSFET`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	pmosfet
Eigenschaften	44
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Typ	pfet	nein	polarity [nfet, pfet]
Vt0	-1.0 V	ja	Null-Schwellenspannung
Kp	2e-5	ja	Übertragungsleitwert-Parameter in A/V²
Gamma	0.0	nein	Substrat-Schwellenspannungs-Parameter in sqrt(V)
Phi	0.6 V	nein	Oberflächenpotential
Lambda	0.0	ja	Parameter für die Kanallängenmodulation in 1/V
Rd	0.0 Ohm	nein	Drain-Bahnwiderstand
Rs	0.0 Ohm	nein	Source-Bahnwiderstand
Rg	0.0 Ohm	nein	ohmscher Widerstand des Gate-Metallkontaktes
Is	1e-14 A	nein	Substrat-Sperrsättigungsstrom
N	1.0	nein	Emissionsfaktor des Substrat-Übergangs
W	1 um	nein	Kanalbreite
L	1 um	nein	Kanallänge
Ld	0.0	nein	Gate-Diffusionsüberlappung
Tox	0.1 um	nein	Oxiddicke
Cgso	0.0	nein	GS-Überlappungskapazität je Kanalbreite in F/m
Cgdo	0.0	nein	GD-Überlappungskapazität je Kanalbreite in F/m
Cgbo	0.0	nein	GB-Überlappungskapazität je Kanallänge in F/m
Cbd	0.0 F	nein	Null-BD-Sperrschichtkapazität
Cbs	0.0 F	nein	Null-BS-Sperrschichtkapazität
Pb	0.8 V	nein	Substrat-Sperrschicht-Diffusionsspannung
Mj	0.5	nein	Substratboden-Sperrschicht-Gradationsexponent
Fc	0.5	nein	Koeffizient für Durchlassbereich der Sperrschichtkapazität
Cjsw	0.0	nein	Null-Substrat-Seitenwandkapazität je Sperrschichtumfang in F/m
Mjsw	0.33	nein	Substratseitenwand-Sperrschicht-Gradationskoeffizient
Tt	0.0 ps	nein	Transitzeit durch das Substrat
Nsub	0.0	nein	Substrat-Dotierungsdichte in 1/cm³
Nss	0.0	nein	Oberflächenladungsdichte-Koeffizient in 1/cm²
Tpg	1	nein	Typ des Gate-Materials: 0 = Aluminium; -1 = wie Substrat; 1 = Gegenteil von Substrat
Uo	600.0	nein	Oberflächenbeweglichkeit in cm²/Vs
Rsh	0.0	nein	Diffusionsflächenwiderstand von Drain und Source in Ohm/Quadrat
Nrd	1	nein	Drain-Flächenfaktor
Nrs	1	nein	Source-Flächenfaktor
Cj	0.0	nein	Null-Substratbodenkapazität je Sperrschichtfläche in F/m²
Js	0.0	nein	Substrat-Sperrsättigungsstromdichte in A/m²
Ad	0.0	nein	Drain-Diffusionsfläche in m²
As	0.0	nein	Source-Diffusionsfläche in m²
Pd	0.0 m	nein	Umfang der Drain-Sperrschicht
Ps	0.0 m	nein	Umfang der Source-Sperrschicht
Kf	0.0	nein	1/f-Rauschkoeffizient
Af	1.0	nein	1/f-Rauschexponent
Ffe	1.0	nein	Frequenzexponent für 1/f-Rauschen
Temp	26.85	nein	Simulationstemperatur in °C
Tnom	26.85	nein	Temperatur bei der die Modellparameter gemessen wurden

Depletion Mosfet¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	MOSFET (Verarmungstyp)
Beschreibung	MOS Feldeffekttransistor
Schematic entry	`_MOSFET`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	dmosfet
Eigenschaften	44
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Typ	nfet	nein	polarity [nfet, pfet]
Vt0	-1.0 V	ja	Null-Schwellenspannung
Kp	2e-5	ja	Übertragungsleitwert-Parameter in A/V²
Gamma	0.0	nein	Substrat-Schwellenspannungs-Parameter in sqrt(V)
Phi	0.6 V	nein	Oberflächenpotential
Lambda	0.0	ja	Parameter für die Kanallängenmodulation in 1/V
Rd	0.0 Ohm	nein	Drain-Bahnwiderstand
Rs	0.0 Ohm	nein	Source-Bahnwiderstand
Rg	0.0 Ohm	nein	ohmscher Widerstand des Gate-Metallkontaktes
Is	1e-14 A	nein	Substrat-Sperrsättigungsstrom
N	1.0	nein	Emissionsfaktor des Substrat-Übergangs
W	1 um	nein	Kanalbreite
L	1 um	nein	Kanallänge
Ld	0.0	nein	Gate-Diffusionsüberlappung
Tox	0.1 um	nein	Oxiddicke
Cgso	0.0	nein	GS-Überlappungskapazität je Kanalbreite in F/m
Cgdo	0.0	nein	GD-Überlappungskapazität je Kanalbreite in F/m
Cgbo	0.0	nein	GB-Überlappungskapazität je Kanallänge in F/m
Cbd	0.0 F	nein	Null-BD-Sperrschichtkapazität
Cbs	0.0 F	nein	Null-BS-Sperrschichtkapazität
Pb	0.8 V	nein	Substrat-Sperrschicht-Diffusionsspannung
Mj	0.5	nein	Substratboden-Sperrschicht-Gradationsexponent
Fc	0.5	nein	Koeffizient für Durchlassbereich der Sperrschichtkapazität
Cjsw	0.0	nein	Null-Substrat-Seitenwandkapazität je Sperrschichtumfang in F/m
Mjsw	0.33	nein	Substratseitenwand-Sperrschicht-Gradationskoeffizient
Tt	0.0 ps	nein	Transitzeit durch das Substrat
Nsub	0.0	nein	Substrat-Dotierungsdichte in 1/cm³
Nss	0.0	nein	Oberflächenladungsdichte-Koeffizient in 1/cm²
Tpg	1	nein	Typ des Gate-Materials: 0 = Aluminium; -1 = wie Substrat; 1 = Gegenteil von Substrat
Uo	600.0	nein	Oberflächenbeweglichkeit in cm²/Vs
Rsh	0.0	nein	Diffusionsflächenwiderstand von Drain und Source in Ohm/Quadrat
Nrd	1	nein	Drain-Flächenfaktor
Nrs	1	nein	Source-Flächenfaktor
Cj	0.0	nein	Null-Substratbodenkapazität je Sperrschichtfläche in F/m²
Js	0.0	nein	Substrat-Sperrsättigungsstromdichte in A/m²
Ad	0.0	nein	Drain-Diffusionsfläche in m²
As	0.0	nein	Source-Diffusionsfläche in m²
Pd	0.0 m	nein	Umfang der Drain-Sperrschicht
Ps	0.0 m	nein	Umfang der Source-Sperrschicht
Kf	0.0	nein	1/f-Rauschkoeffizient
Af	1.0	nein	1/f-Rauschexponent
Ffe	1.0	nein	Frequenzexponent für 1/f-Rauschen
Temp	26.85	nein	Simulationstemperatur in °C
Tnom	26.85	nein	Temperatur bei der die Modellparameter gemessen wurden

N-Mosfet¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	n-MOSFET
Beschreibung	MOS field-effect transistor with substrate
Schematic entry	`MOSFET`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	nmosfet_sub
Eigenschaften	44
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Typ	nfet	nein	polarity [nfet, pfet]
Vt0	1.0 V	ja	Null-Schwellenspannung
Kp	2e-5	ja	Übertragungsleitwert-Parameter in A/V²
Gamma	0.0	nein	Substrat-Schwellenspannungs-Parameter in sqrt(V)
Phi	0.6 V	nein	Oberflächenpotential
Lambda	0.0	ja	Parameter für die Kanallängenmodulation in 1/V
Rd	0.0 Ohm	nein	Drain-Bahnwiderstand
Rs	0.0 Ohm	nein	Source-Bahnwiderstand
Rg	0.0 Ohm	nein	ohmscher Widerstand des Gate-Metallkontaktes
Is	1e-14 A	nein	Substrat-Sperrsättigungsstrom
N	1.0	nein	Emissionsfaktor des Substrat-Übergangs
W	1 um	nein	Kanalbreite
L	1 um	nein	Kanallänge
Ld	0.0	nein	Gate-Diffusionsüberlappung
Tox	0.1 um	nein	Oxiddicke
Cgso	0.0	nein	GS-Überlappungskapazität je Kanalbreite in F/m
Cgdo	0.0	nein	GD-Überlappungskapazität je Kanalbreite in F/m
Cgbo	0.0	nein	GB-Überlappungskapazität je Kanallänge in F/m
Cbd	0.0 F	nein	Null-BD-Sperrschichtkapazität
Cbs	0.0 F	nein	Null-BS-Sperrschichtkapazität
Pb	0.8 V	nein	Substrat-Sperrschicht-Diffusionsspannung
Mj	0.5	nein	Substratboden-Sperrschicht-Gradationsexponent
Fc	0.5	nein	Koeffizient für Durchlassbereich der Sperrschichtkapazität
Cjsw	0.0	nein	Null-Substrat-Seitenwandkapazität je Sperrschichtumfang in F/m
Mjsw	0.33	nein	Substratseitenwand-Sperrschicht-Gradationskoeffizient
Tt	0.0 ps	nein	Transitzeit durch das Substrat
Nsub	0.0	nein	Substrat-Dotierungsdichte in 1/cm³
Nss	0.0	nein	Oberflächenladungsdichte-Koeffizient in 1/cm²
Tpg	1	nein	Typ des Gate-Materials: 0 = Aluminium; -1 = wie Substrat; 1 = Gegenteil von Substrat
Uo	600.0	nein	Oberflächenbeweglichkeit in cm²/Vs
Rsh	0.0	nein	Diffusionsflächenwiderstand von Drain und Source in Ohm/Quadrat
Nrd	1	nein	Drain-Flächenfaktor
Nrs	1	nein	Source-Flächenfaktor
Cj	0.0	nein	Null-Substratbodenkapazität je Sperrschichtfläche in F/m²
Js	0.0	nein	Substrat-Sperrsättigungsstromdichte in A/m²
Ad	0.0	nein	Drain-Diffusionsfläche in m²
As	0.0	nein	Source-Diffusionsfläche in m²
Pd	0.0 m	nein	Umfang der Drain-Sperrschicht
Ps	0.0 m	nein	Umfang der Source-Sperrschicht
Kf	0.0	nein	1/f-Rauschkoeffizient
Af	1.0	nein	1/f-Rauschexponent
Ffe	1.0	nein	Frequenzexponent für 1/f-Rauschen
Temp	26.85	nein	Simulationstemperatur in °C
Tnom	26.85	nein	Temperatur bei der die Modellparameter gemessen wurden

P-Mosfet¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	p-MOSFET
Beschreibung	MOS field-effect transistor with substrate
Schematic entry	`MOSFET`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	pmosfet_sub
Eigenschaften	44
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Typ	pfet	nein	polarity [nfet, pfet]
Vt0	-1.0 V	ja	Null-Schwellenspannung
Kp	2e-5	ja	Übertragungsleitwert-Parameter in A/V²
Gamma	0.0	nein	Substrat-Schwellenspannungs-Parameter in sqrt(V)
Phi	0.6 V	nein	Oberflächenpotential
Lambda	0.0	ja	Parameter für die Kanallängenmodulation in 1/V
Rd	0.0 Ohm	nein	Drain-Bahnwiderstand
Rs	0.0 Ohm	nein	Source-Bahnwiderstand
Rg	0.0 Ohm	nein	ohmscher Widerstand des Gate-Metallkontaktes
Is	1e-14 A	nein	Substrat-Sperrsättigungsstrom
N	1.0	nein	Emissionsfaktor des Substrat-Übergangs
W	1 um	nein	Kanalbreite
L	1 um	nein	Kanallänge
Ld	0.0	nein	Gate-Diffusionsüberlappung
Tox	0.1 um	nein	Oxiddicke
Cgso	0.0	nein	GS-Überlappungskapazität je Kanalbreite in F/m
Cgdo	0.0	nein	GD-Überlappungskapazität je Kanalbreite in F/m
Cgbo	0.0	nein	GB-Überlappungskapazität je Kanallänge in F/m
Cbd	0.0 F	nein	Null-BD-Sperrschichtkapazität
Cbs	0.0 F	nein	Null-BS-Sperrschichtkapazität
Pb	0.8 V	nein	Substrat-Sperrschicht-Diffusionsspannung
Mj	0.5	nein	Substratboden-Sperrschicht-Gradationsexponent
Fc	0.5	nein	Koeffizient für Durchlassbereich der Sperrschichtkapazität
Cjsw	0.0	nein	Null-Substrat-Seitenwandkapazität je Sperrschichtumfang in F/m
Mjsw	0.33	nein	Substratseitenwand-Sperrschicht-Gradationskoeffizient
Tt	0.0 ps	nein	Transitzeit durch das Substrat
Nsub	0.0	nein	Substrat-Dotierungsdichte in 1/cm³
Nss	0.0	nein	Oberflächenladungsdichte-Koeffizient in 1/cm²
Tpg	1	nein	Typ des Gate-Materials: 0 = Aluminium; -1 = wie Substrat; 1 = Gegenteil von Substrat
Uo	600.0	nein	Oberflächenbeweglichkeit in cm²/Vs
Rsh	0.0	nein	Diffusionsflächenwiderstand von Drain und Source in Ohm/Quadrat
Nrd	1	nein	Drain-Flächenfaktor
Nrs	1	nein	Source-Flächenfaktor
Cj	0.0	nein	Null-Substratbodenkapazität je Sperrschichtfläche in F/m²
Js	0.0	nein	Substrat-Sperrsättigungsstromdichte in A/m²
Ad	0.0	nein	Drain-Diffusionsfläche in m²
As	0.0	nein	Source-Diffusionsfläche in m²
Pd	0.0 m	nein	Umfang der Drain-Sperrschicht
Ps	0.0 m	nein	Umfang der Source-Sperrschicht
Kf	0.0	nein	1/f-Rauschkoeffizient
Af	1.0	nein	1/f-Rauschexponent
Ffe	1.0	nein	Frequenzexponent für 1/f-Rauschen
Temp	26.85	nein	Simulationstemperatur in °C
Tnom	26.85	nein	Temperatur bei der die Modellparameter gemessen wurden

Depletion Mosfet¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	MOSFET (Verarmungstyp)
Beschreibung	MOS field-effect transistor with substrate
Schematic entry	`MOSFET`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	dmosfet_sub
Eigenschaften	44
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Typ	nfet	nein	polarity [nfet, pfet]
Vt0	-1.0 V	ja	Null-Schwellenspannung
Kp	2e-5	ja	Übertragungsleitwert-Parameter in A/V²
Gamma	0.0	nein	Substrat-Schwellenspannungs-Parameter in sqrt(V)
Phi	0.6 V	nein	Oberflächenpotential
Lambda	0.0	ja	Parameter für die Kanallängenmodulation in 1/V
Rd	0.0 Ohm	nein	Drain-Bahnwiderstand
Rs	0.0 Ohm	nein	Source-Bahnwiderstand
Rg	0.0 Ohm	nein	ohmscher Widerstand des Gate-Metallkontaktes
Is	1e-14 A	nein	Substrat-Sperrsättigungsstrom
N	1.0	nein	Emissionsfaktor des Substrat-Übergangs
W	1 um	nein	Kanalbreite
L	1 um	nein	Kanallänge
Ld	0.0	nein	Gate-Diffusionsüberlappung
Tox	0.1 um	nein	Oxiddicke
Cgso	0.0	nein	GS-Überlappungskapazität je Kanalbreite in F/m
Cgdo	0.0	nein	GD-Überlappungskapazität je Kanalbreite in F/m
Cgbo	0.0	nein	GB-Überlappungskapazität je Kanallänge in F/m
Cbd	0.0 F	nein	Null-BD-Sperrschichtkapazität
Cbs	0.0 F	nein	Null-BS-Sperrschichtkapazität
Pb	0.8 V	nein	Substrat-Sperrschicht-Diffusionsspannung
Mj	0.5	nein	Substratboden-Sperrschicht-Gradationsexponent
Fc	0.5	nein	Koeffizient für Durchlassbereich der Sperrschichtkapazität
Cjsw	0.0	nein	Null-Substrat-Seitenwandkapazität je Sperrschichtumfang in F/m
Mjsw	0.33	nein	Substratseitenwand-Sperrschicht-Gradationskoeffizient
Tt	0.0 ps	nein	Transitzeit durch das Substrat
Nsub	0.0	nein	Substrat-Dotierungsdichte in 1/cm³
Nss	0.0	nein	Oberflächenladungsdichte-Koeffizient in 1/cm²
Tpg	1	nein	Typ des Gate-Materials: 0 = Aluminium; -1 = wie Substrat; 1 = Gegenteil von Substrat
Uo	600.0	nein	Oberflächenbeweglichkeit in cm²/Vs
Rsh	0.0	nein	Diffusionsflächenwiderstand von Drain und Source in Ohm/Quadrat
Nrd	1	nein	Drain-Flächenfaktor
Nrs	1	nein	Source-Flächenfaktor
Cj	0.0	nein	Null-Substratbodenkapazität je Sperrschichtfläche in F/m²
Js	0.0	nein	Substrat-Sperrsättigungsstromdichte in A/m²
Ad	0.0	nein	Drain-Diffusionsfläche in m²
As	0.0	nein	Source-Diffusionsfläche in m²
Pd	0.0 m	nein	Umfang der Drain-Sperrschicht
Ps	0.0 m	nein	Umfang der Source-Sperrschicht
Kf	0.0	nein	1/f-Rauschkoeffizient
Af	1.0	nein	1/f-Rauschexponent
Ffe	1.0	nein	Frequenzexponent für 1/f-Rauschen
Temp	26.85	nein	Simulationstemperatur in °C
Tnom	26.85	nein	Temperatur bei der die Modellparameter gemessen wurden

Opamp¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	OPV
Beschreibung	Operationsverstärker
Schematic entry	`OpAmp`
Netlist entry	`OP`
Typ	AnalogComponent
Bitmap file	opamp
Eigenschaften	2
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
G	1e6	ja	Spannungsverstärkung
Umax	15 V	nein	absoluter Wert der maximalen und minimalen Ausgangsspannung

Equation Defined Device¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Equation Defined Device
Beschreibung	equation defined device
Schematic entry	`EDD`
Netlist entry	`D`
Typ	AnalogComponent
Bitmap file	edd
Eigenschaften	4
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Typ	explicit	nein	type of equations [explicit, implicit]
Branches	1	nein	number of branches
I1	0	ja	current equation 1
Q1	0	nein	charge equation 1

Diac¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Diac
Beschreibung	diac (bidirectional trigger diode)
Schematic entry	`Diac`
Netlist entry	`D`
Typ	AnalogComponent
Bitmap file	diac
Eigenschaften	7
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Vbo	30 V	ja	(bidirectional) breakover voltage
Ibo	50 uA	nein	(bidirectional) breakover current
Cj0	10 pF	nein	parasitic capacitance
Is	1e-10 A	nein	Sättigungsstrom
N	2	nein	Idealiätsfaktor
Ri	10 Ohm	nein	intrinsic junction resistance
Temp	26.85	nein	simulation temperature

Triac¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Triac
Beschreibung	triac (bidirectional thyristor)
Schematic entry	`Triac`
Netlist entry	`D`
Typ	AnalogComponent
Bitmap file	triac
Eigenschaften	8
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Vbo	400 V	nein	(bidirectional) breakover voltage
Igt	50 uA	ja	(bidirectional) gate trigger current
Cj0	10 pF	nein	parasitic capacitance
Is	1e-10 A	nein	Sättigungsstrom
N	2	nein	Idealiätsfaktor
Ri	10 Ohm	nein	intrinsic junction resistance
Rg	5 Ohm	nein	gate resistance
Temp	26.85	nein	simulation temperature

Thyristor¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Thyristor
Beschreibung	silicon controlled rectifier (SCR)
Schematic entry	`SCR`
Netlist entry	`D`
Typ	AnalogComponent
Bitmap file	thyristor
Eigenschaften	8
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Vbo	400 V	nein	breakover voltage
Igt	50 uA	ja	gate trigger current
Cj0	10 pF	nein	parasitic capacitance
Is	1e-10 A	nein	Sättigungsstrom
N	2	nein	Idealiätsfaktor
Ri	10 Ohm	nein	intrinsic junction resistance
Rg	5 Ohm	nein	gate resistance
Temp	26.85	nein	simulation temperature

Tunnel Diode¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Tunnel Diode
Beschreibung	resonance tunnel diode
Schematic entry	`RTD`
Netlist entry	`D`
Typ	AnalogComponent
Bitmap file	tunneldiode
Eigenschaften	16
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Ip	4 mA	ja	peak current
Iv	0.6 mA	ja	valley current
Vv	0.8 V	ja	valley voltage
Wr	2.7e-20	nein	resonance energy in Ws
eta	1e-20	nein	Fermi energy in Ws
dW	4.5e-21	nein	resonance width in Ws
Tmax	0.95	nein	maximum of transmission
de	0.9	nein	fitting factor for electron density
dv	2.0	nein	fitting factor for voltage drop
nv	16	nein	fitting factor for diode current
Cj0	80 fF	nein	zero-bias depletion capacitance
M	0.5	nein	Gradationskoeffizient
Vj	0.5 V	nein	Sperrschichtpotential
te	0.6 ps	nein	life-time of electrons
Temp	26.85	nein	Simulationstemperatur in °C
Area	1.0	nein	Skalierungsfaktor der Diode

Verilog-A Devices¶

Hicum L2 V2.1¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	HICUM L2 v2.1
Beschreibung	HICUM Level 2 v2.1 verilog device
Schematic entry	`hicumL2V2p1`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	npnsub_therm
Eigenschaften	101
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
c10	1.516E-31	nein	GICCR constant
qp0	5.939E-15	nein	Zero-bias hole charge
ich	1.0E11	nein	High-current correction for 2D and 3D effects
hfe	1.0	nein	Emitter minority charge weighting factor in HBTs
hfc	0.03999	nein	Collector minority charge weighting factor in HBTs
hjei	0.435	nein	B-E depletion charge weighting factor in HBTs
hjci	0.09477	nein	B-C depletion charge weighting factor in HBTs
ibeis	3.47E-20	nein	Internal B-E saturation current
mbei	1.025	nein	Internal B-E current ideality factor
ireis	390E-12	nein	Internal B-E recombination saturation current
mrei	3	nein	Internal B-E recombination current ideality factor
ibeps	4.18321E-21	nein	Peripheral B-E saturation current
mbep	1.045	nein	Peripheral B-E current ideality factor
ireps	1.02846E-14	nein	Peripheral B-E recombination saturation current
mrep	3	nein	Peripheral B-E recombination current ideality factor
mcf	1.0	nein	Non-ideality factor for III-V HBTs
ibcis	3.02613E-18	nein	Internal B-C saturation current
mbci	1.0	nein	Internal B-C current ideality factor
ibcxs	4.576E-29	nein	External B-C saturation current
mbcx	1.0	nein	External B-C current ideality factor
ibets	0.0	nein	B-E tunneling saturation current
abet	36.74	nein	Exponent factor for tunneling current
favl	14.97	nein	Avalanche current factor
qavl	7.2407E-14	nein	Exponent factor for avalanche current
alfav	0.0	nein	Relative TC for FAVL
alqav	0.0	nein	Relative TC for QAVL
rbi0	7.9	nein	Zero bias internal base resistance
rbx	13.15	nein	External base series resistance
fgeo	0.724	nein	Factor for geometry dependence of emitter current crowding
fdqr0	0	nein	Correction factor for modulation by B-E and B-C space charge layer
fcrbi	0.0	nein	Ratio of HF shunt to total internal capacitance (lateral NQS effect)
fqi	1.0	nein	Ration of internal to total minority charge
re	9.77	nein	Emitter series resistance
rcx	10	nein	External collector series resistance
itss	2.81242E-19	nein	Substrate transistor transfer saturation current
msf	1.0	nein	Forward ideality factor of substrate transfer current
iscs	7.6376E-17	nein	C-S diode saturation current
msc	1.0	nein	Ideality factor of C-S diode current
tsf	1.733E-8	nein	Transit time for forward operation of substrate transistor
rsu	800	nein	Substrate series resistance
csu	1.778E-14	nein	Substrate shunt capacitance
cjei0	5.24382E-14	nein	Internal B-E zero-bias depletion capacitance
vdei	0.9956	nein	Internal B-E built-in potential
zei	0.4	nein	Internal B-E grading coefficient
aljei	2.5	nein	Ratio of maximum to zero-bias value of internal B-E capacitance
cjep0	0	nein	Peripheral B-E zero-bias depletion capacitance
vdep	1	nein	Peripheral B-E built-in potential
zep	0.01	nein	Peripheral B-E grading coefficient
aljep	2.5	nein	Ratio of maximum to zero-bias value of peripheral B-E capacitance
cjci0	4.46887E-15	nein	Internal B-C zero-bias depletion capacitance
vdci	0.7	nein	Internal B-C built-in potential
zci	0.38	nein	Internal B-C grading coefficient
vptci	100	nein	Internal B-C punch-through voltage
cjcx0	1.55709E-14	nein	External B-C zero-bias depletion capacitance
vdcx	0.733	nein	External B-C built-in potential
zcx	0.34	nein	External B-C grading coefficient
vptcx	100	nein	External B-C punch-through voltage
fbc	0.3487	nein	Partitioning factor of parasitic B-C capacitance
cjs0	17.68E-15	nein	C-S zero-bias depletion capacitance
vds	0.621625	nein	C-S built-in potential
zs	0.122136	nein	C-S grading coefficient
vpts	1000	nein	C-S punch-through voltage
t0	1.28E-12	nein	Low current forward transit time at VBC=0V
dt0h	260E-15	nein	Time constant for base and B-C space charge layer width modulation
tbvl	2.0E-13	nein	Time constant for modelling carrier jam at low VCE
tef0	0.0	nein	Neutral emitter storage time
gtfe	1.0	nein	Exponent factor for current dependence of neutral emitter storage time
thcs	46E-15	nein	Saturation time constant at high current densities
alhc	0.08913	nein	Smoothing factor for current dependence of base and collector transit time
fthc	0.8778	nein	Partitioning factor for base and collector portion
rci0	50.4277	nein	Internal collector resistance at low electric field
vlim	0.9	nein	Voltage separating ohmic and saturation velocity regime
vces	0.01	nein	Internal C-E saturation voltage
vpt	10	nein	Collector punch-through voltage
tr	1.0E-11	nein	Storage time for inverse operation
ceox	1.71992E-15	nein	Total parasitic B-E capacitance
ccox	4.9E-15	nein	Total parasitic B-C capacitance
alqf	0.1288	nein	Factor for additional delay time of minority charge
alit	1.0	nein	Factor for additional delay time of transfer current
kf	2.83667E-9	nein	Flicker noise coefficient
af	2.0	nein	Flicker noise exponent factor
krbi	1.0	nein	Noise factor for internal base resistance
latb	10.479	nein	Scaling factor for collector minority charge in direction of emitter width
latl	0.300012	nein	Scaling factor for collector minority charge in direction of emitter length
vgb	1.112	nein	Bandgap voltage extrapolated to 0 K
alt0	0.0017580	nein	First order relative TC of parameter T0
kt0	4.07E-6	nein	Second order relative TC of parameter T0
zetaci	0.7	nein	Temperature exponent for RCI0
zetacx	1.0	nein	Temperature exponent of mobility in substrate transistor transit time
alvs	0.001	nein	Relative TC of saturation drift velocity
alces	0.000125	nein	Relative TC of VCES
zetarbi	0.0	nein	Temperature exponent of internal base resistance
zetarbx	0.2	nein	Temperature exponent of external base resistance
zetarcx	0.21	nein	Temperature exponent of external collector resistance
zetare	0.7	nein	Temperature exponent of emitter resistance
alb	0.007	nein	Relative TC of forward current gain for V2.1 model
rth	1293.95	nein	Thermal resistance
cth	7.22203E-11	nein	Thermal capacitance
tnom	27.0	nein	Temperature at which parameters are specified
dt	0.0	nein	Temperature change w.r.t. chip temperature for particular transistor
Temp	27	nein	simulation temperature

Fbh Hbt¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	FBH HBT
Beschreibung	HBT model by Ferdinand-Braun-Institut (FBH), Berlin
Schematic entry	`HBT_X`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	npn_therm
Eigenschaften	80
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Mode	1	nein	Ignored
Noise	1	nein	Ignored
Debug	0	nein	Ignored
DebugPlus	0	nein	Ignored
Temp	25.0	nein	Device operating temperature, Celsius
Rth	0.1	nein	Thermal resistance, K/W
Cth	700e-9	nein	Thermal capacitance
N	1	nein	Scaling factor, number of emitter fingers
L	30e-6	nein	Length of emitter finger, m
W	1e-6	nein	Width of emitter finger, m
Jsf	20e-24	nein	Forward saturation current density, A/um^2
nf	1.0	nein	Forward current emission coefficient
Vg	1.3	nein	Forward thermal activation energy, V, (0 == disables temperature dependence)
Jse	0.0	nein	B-E leakage saturation current density, A/um^2
ne	0.0	nein	B-E leakage emission coefficient
Rbxx	1e6	nein	Limiting resistor of B-E leakage diode, Ohm
Vgb	0.0	nein	B-E leakage thermal activation energy, V, (0 == disables temperature dependence)
Jsee	0.0	nein	2nd B-E leakage saturation current density, A/um^2
nee	0.0	nein	2nd B-E leakage emission coefficient
Rbbxx	1e6	nein	2nd Limiting resistor of B-E leakage diode, Ohm
Vgbb	0.0	nein	2nd B-E leakage thermal activation energy, V, (0 == disables temperature dependence)
Jsr	20e-18	nein	Reverse saturation current density, A/um^2
nr	1.0	nein	Reverse current emission coefficient
Vgr	0.0	nein	Reverse thermal activation energy, V, (0 == disables temperature dependence)
XCjc	0.5	nein	Fraction of Cjc that goes to internal base node
Jsc	0.0	nein	B-C leakage saturation current density, A/um^2 (0. switches off diode)
nc	0.0	nein	B-C leakage emission coefficient (0. switches off diode)
Rcxx	1e6	nein	Limiting resistor of B-C leakage diode, Ohm
Vgc	0.0	nein	B-C leakage thermal activation energy, V, (0 == disables temperature dependence)
Bf	100.0	nein	Ideal forward beta
kBeta	0.0	nein	Temperature coefficient of forward current gain, -1/K, (0 == disables temperature dependence)
Br	1.0	nein	Ideal reverse beta
VAF	0.0	nein	Forward Early voltage, V, (0 == disables Early Effect)
VAR	0.0	nein	Reverse Early voltage, V, (0 == disables Early Effect)
IKF	0.0	nein	Forward high-injection knee current, A, (0 == disables Webster Effect)
IKR	0.0	nein	Reverse high-injection knee current, A, (0 == disables Webster Effect)
Mc	0.0	nein	C-E breakdown exponent, (0 == disables collector break-down)
BVceo	0.0	nein	C-E breakdown voltage, V, (0 == disables collector break-down)
kc	0.0	nein	C-E breakdown factor, (0 == disables collector break-down)
BVebo	0.0	nein	B-E breakdown voltage, V, (0 == disables emitter break-down)
Tr	1.0e-15	nein	Ideal reverse transit time, s
Trx	1.0e-15	nein	Extrinsic BC diffusion capacitance, F
Tf	1.0e-12	nein	Ideal forward transit time, s
Tft	0.0	nein	Temperature coefficient of forward transit time
Thcs	0.0	nein	Excess transit time coefficient at base push-out
Ahc	0.0	nein	Smoothing parameter for Thcs
Cje	1.0e-15	nein	B-E zero-bias depletion capacitance, F/um^2
mje	0.5	nein	B-E junction exponential factor
Vje	1.3	nein	B-E junction built-in potential, V
Cjc	1.0e-15	nein	B-C zero-bias depletion capacitance, F/um^2
mjc	0.5	nein	B-C junction exponential factor
Vjc	1.3	nein	B-C junction built-in potential, V
kjc	1.0	nein	not used
Cmin	0.1e-15	nein	Minimum B-C depletion capacitance (Vbc dependence), F/um^2
J0	1e-3	nein	Collector current where Cbc reaches Cmin, A/um^2 (0 == disables Cbc reduction)
XJ0	1.0	nein	Fraction of Cmin, lower limit of BC capacitance (Ic dependence)
Rci0	1e-3	nein	Onset of base push-out at low voltages, Ohm*um^2 (0 == disables base push-out)
Jk	4e-4	nein	Onset of base push-out at high voltages, A/um^2, (0 == disables base push-out)
RJk	1e-3	nein	Slope of Jk at high currents , Ohm*um^2
Vces	1e-3	nein	Voltage shift of base push-out onset, V
Rc	1.0	nein	Collector resistance, Ohm/finger
Re	1.0	nein	Emitter resistance, Ohm/finger
Rb	1.0	nein	Extrinsic base resistance, Ohm/finger
Rb2	1.0	nein	Inner Base ohmic resistance, Ohm/finger
Lc	0.0	nein	Collector inductance, H
Le	0.0	nein	Emitter inductance, H
Lb	0.0	nein	Base inductance, H
Cq	0.0	nein	Extrinsic B-C capacitance, F
Cpb	0.0	nein	Extrinsic base capacitance, F
Cpc	0.0	nein	Extrinsic collector capacitance, F
Kfb	0.0	nein	Flicker-noise coefficient
Afb	0.0	nein	Flicker-noise exponent
Ffeb	0.0	nein	Flicker-noise frequency exponent
Kb	0.0	nein	Burst noise coefficient
Ab	0.0	nein	Burst noise exponent
Fb	0.0	nein	Burst noise corner frequency, Hz
Kfe	0.0	nein	Flicker-noise coefficient
Afe	0.0	nein	Flicker-noise exponent
Ffee	0.0	nein	Flicker-noise frequency exponent
Tnom	20.0	nein	Ambient temperature at which the parameters were determined

Modular Opamp¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Modular OpAmp
Beschreibung	Modular Operational Amplifier verilog device
Schematic entry	`mod_amp`
Netlist entry	`OP`
Typ	AnalogComponent
Bitmap file	mod_amp
Eigenschaften	17
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
GBP	1e6	nein	Gain bandwidth product (Hz)
AOLDC	106.0	nein	Open-loop differential gain at DC (dB)
FP2	3e6	nein	Second pole frequency (Hz)
RO	75	nein	Output resistance (Ohm)
CD	1e-12	nein	Differential input capacitance (F)
RD	2e6	nein	Differential input resistance (Ohm)
IOFF	20e-9	nein	Input offset current (A)
IB	80e-9	nein	Input bias current (A)
VOFF	7e-4	nein	Input offset voltage (V)
CMRRDC	90.0	nein	Common-mode rejection ratio at DC (dB)
FCM	200.0	nein	Common-mode zero corner frequency (Hz)
PSRT	5e5	nein	Positive slew rate (V/s)
NSRT	5e5	nein	Negative slew rate (V/s)
VLIMP	14	nein	Positive output voltage limit (V)
VLIMN	-14	nein	Negative output voltage limit (V)
ILMAX	35e-3	nein	Maximum DC output current (A)
CSCALE	50	nein	Current limit scale factor

Hicum L2 V2.22¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	HICUM L2 v2.22
Beschreibung	HICUM Level 2 v2.22 verilog device
Schematic entry	`hic2_full`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	npnsub_therm
Eigenschaften	114
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
c10	2.0E-30	nein	GICCR constant (A^2s)
qp0	2.0E-14	nein	Zero-bias hole charge (Coul)
ich	0.0	nein	High-current correction for 2D and 3D effects (A)
hfe	1.0	nein	Emitter minority charge weighting factor in HBTs
hfc	1.0	nein	Collector minority charge weighting factor in HBTs
hjei	1.0	nein	B-E depletion charge weighting factor in HBTs
hjci	1.0	nein	B-C depletion charge weighting factor in HBTs
ibeis	1.0E-18	nein	Internal B-E saturation current (A)
mbei	1.0	nein	Internal B-E current ideality factor
ireis	0.0	nein	Internal B-E recombination saturation current (A)
mrei	2.0	nein	Internal B-E recombination current ideality factor
ibeps	0.0	nein	Peripheral B-E saturation current (A)
mbep	1.0	nein	Peripheral B-E current ideality factor
ireps	0.0	nein	Peripheral B-E recombination saturation current (A)
mrep	2.0	nein	Peripheral B-E recombination current ideality factor
mcf	1.0	nein	Non-ideality factor for III-V HBTs
tbhrec	0.0	nein	Base current recombination time constant at B-C barrier for high forward injection (s)
ibcis	1.0E-16	nein	Internal B-C saturation current (A)
mbci	1.0	nein	Internal B-C current ideality factor
ibcxs	0.0	nein	External B-C saturation current (A)
mbcx	1.0	nein	External B-C current ideality factor
ibets	0.0	nein	B-E tunneling saturation current (A)
abet	40	nein	Exponent factor for tunneling current
tunode	1	nein	Specifies the base node connection for the tunneling current
favl	0.0	nein	Avalanche current factor (1/V)
qavl	0.0	nein	Exponent factor for avalanche current (Coul)
alfav	0.0	nein	Relative TC for FAVL (1/K)
alqav	0.0	nein	Relative TC for QAVL (1/K)
rbi0	0.0	nein	Zero bias internal base resistance (Ohm)
rbx	0.0	nein	External base series resistance (Ohm)
fgeo	0.6557	nein	Factor for geometry dependence of emitter current crowding
fdqr0	0.0	nein	Correction factor for modulation by B-E and B-C space charge layer
fcrbi	0.0	nein	Ratio of HF shunt to total internal capacitance (lateral NQS effect)
fqi	1.0	nein	Ration of internal to total minority charge
re	0.0	nein	Emitter series resistance (Ohm)
rcx	0.0	nein	External collector series resistance (Ohm)
itss	0.0	nein	Substrate transistor transfer saturation current (A)
msf	1.0	nein	Forward ideality factor of substrate transfer current
iscs	0.0	nein	C-S diode saturation current (A)
msc	1.0	nein	Ideality factor of C-S diode current
tsf	0.0	nein	Transit time for forward operation of substrate transistor (s)
rsu	0.0	nein	Substrate series resistance (Ohm)
csu	0.0	nein	Substrate shunt capacitance (F)
cjei0	1.0E-20	nein	Internal B-E zero-bias depletion capacitance (F)
vdei	0.9	nein	Internal B-E built-in potential (V)
zei	0.5	nein	Internal B-E grading coefficient
ajei	2.5	nein	Ratio of maximum to zero-bias value of internal B-E capacitance
cjep0	1.0E-20	nein	Peripheral B-E zero-bias depletion capacitance (F)
vdep	0.9	nein	Peripheral B-E built-in potential (V)
zep	0.5	nein	Peripheral B-E grading coefficient
ajep	2.5	nein	Ratio of maximum to zero-bias value of peripheral B-E capacitance
cjci0	1.0E-20	nein	Internal B-C zero-bias depletion capacitance (F)
vdci	0.7	nein	Internal B-C built-in potential (V)
zci	0.4	nein	Internal B-C grading coefficient
vptci	100	nein	Internal B-C punch-through voltage (V)
cjcx0	1.0E-20	nein	External B-C zero-bias depletion capacitance (F)
vdcx	0.7	nein	External B-C built-in potential (V)
zcx	0.4	nein	External B-C grading coefficient
vptcx	100	nein	External B-C punch-through voltage (V)
fbcpar	0.0	nein	Partitioning factor of parasitic B-C cap
fbepar	1.0	nein	Partitioning factor of parasitic B-E cap
cjs0	0.0	nein	C-S zero-bias depletion capacitance (F)
vds	0.6	nein	C-S built-in potential (V)
zs	0.5	nein	C-S grading coefficient
vpts	100	nein	C-S punch-through voltage (V)
t0	0.0	nein	Low current forward transit time at VBC=0V (s)
dt0h	0.0	nein	Time constant for base and B-C space charge layer width modulation (s)
tbvl	0.0	nein	Time constant for modelling carrier jam at low VCE (s)
tef0	0.0	nein	Neutral emitter storage time (s)
gtfe	1.0	nein	Exponent factor for current dependence of neutral emitter storage time
thcs	0.0	nein	Saturation time constant at high current densities (s)
ahc	0.1	nein	Smoothing factor for current dependence of base and collector transit time
fthc	0.0	nein	Partitioning factor for base and collector portion
rci0	150	nein	Internal collector resistance at low electric field (Ohm)
vlim	0.5	nein	Voltage separating ohmic and saturation velocity regime (V)
vces	0.1	nein	Internal C-E saturation voltage (V)
vpt	0.0	nein	Collector punch-through voltage (V)
tr	0.0	nein	Storage time for inverse operation (s)
cbepar	0.0	nein	Total parasitic B-E capacitance (F)
cbcpar	0.0	nein	Total parasitic B-C capacitance (F)
alqf	0.0	nein	Factor for additional delay time of minority charge
alit	0.0	nein	Factor for additional delay time of transfer current
flnqs	0	nein	Flag for turning on and off of vertical NQS effect
kf	0.0	nein	Flicker noise coefficient
af	2.0	nein	Flicker noise exponent factor
cfbe	-1	nein	Flag for determining where to tag the flicker noise source
latb	0.0	nein	Scaling factor for collector minority charge in direction of emitter width
latl	0.0	nein	Scaling factor for collector minority charge in direction of emitter length
vgb	1.17	nein	Bandgap voltage extrapolated to 0 K (V)
alt0	0.0	nein	First order relative TC of parameter T0 (1/K)
kt0	0.0	nein	Second order relative TC of parameter T0
zetaci	0.0	nein	Temperature exponent for RCI0
alvs	0.0	nein	Relative TC of saturation drift velocity (1/K)
alces	0.0	nein	Relative TC of VCES (1/K)
zetarbi	0.0	nein	Temperature exponent of internal base resistance
zetarbx	0.0	nein	Temperature exponent of external base resistance
zetarcx	0.0	nein	Temperature exponent of external collector resistance
zetare	0.0	nein	Temperature exponent of emitter resistance
zetacx	1.0	nein	Temperature exponent of mobility in substrate transistor transit time
vge	1.17	nein	Effective emitter bandgap voltage (V)
vgc	1.17	nein	Effective collector bandgap voltage (V)
vgs	1.17	nein	Effective substrate bandgap voltage (V)
f1vg	-1.02377e-4	nein	Coefficient K1 in T-dependent band-gap equation
f2vg	4.3215e-4	nein	Coefficient K2 in T-dependent band-gap equation
zetact	3.0	nein	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	nein	Exponent coefficient in B-E junction current temperature dependence
alb	0.0	nein	Relative TC of forward current gain for V2.1 model (1/K)
flsh	0	nein	Flag for turning on and off self-heating effect
rth	0.0	nein	Thermal resistance (K/W)
cth	0.0	nein	Thermal capacitance (J/W)
flcomp	0.0	nein	Flag for compatibility with v2.1 model (0=v2.1)
tnom	27.0	nein	Temperature at which parameters are specified (C)
dt	0.0	nein	Temperature change w.r.t. chip temperature for particular transistor (K)
Temp	27	nein	simulation temperature

Logarithmic Amplifier¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Logarithmic Amplifier
Beschreibung	Logarithmic Amplifier verilog device
Schematic entry	`log_amp`
Netlist entry	`LA`
Typ	AnalogComponent
Bitmap file	log_amp
Eigenschaften	17
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Kv	1.0	nein	scale factor
Dk	0.3	nein	scale factor error (%)
Ib1	5e-12	nein	input I1 bias current (A)
Ibr	5e-12	nein	input reference bias current (A)
M	5	nein	number of decades
N	0.1	nein	conformity error (%)
Vosout	3e-3	nein	output offset error (V)
Rinp	1e6	nein	amplifier input resistance (Ohm)
Fc	1e3	nein	amplifier 3dB frequency (Hz)
Ro	1e-3	nein	amplifier output resistance (Ohm)
Ntc	0.002	nein	conformity error temperature coefficient (%/Celsius)
Vosouttc	80e-6	nein	offset temperature coefficient (V/Celsius)
Dktc	0.03	nein	scale factor error temperature coefficient (%/Celsius)
Ib1tc	0.5e-12	nein	input I1 bias current temperature coefficient (A/Celsius)
Ibrtc	0.5e-12	nein	input reference bias current temperature coefficient (A/Celsius)
Tnom	26.85	nein	parameter measurement temperature (Celsius)
Temp	26.85	nein	simulation temperature

Npn Hicum L0 V1.12¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	npn HICUM L0 v1.12
Beschreibung	HICUM Level 0 v1.12 verilog device
Schematic entry	`hic0_full`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	npnsub_therm
Eigenschaften	86
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Typ	npn	ja	polarity [npn, pnp]
is	1.0e-16	nein	(Modified) saturation current (A)
mcf	1.00	nein	Non-ideality coefficient of forward collector current
mcr	1.00	nein	Non-ideality coefficient of reverse collector current
vef	1.0e6	nein	forward Early voltage (normalization volt.) (V)
iqf	1.0e6	nein	forward d.c. high-injection roll-off current (A)
iqr	1.0e6	nein	inverse d.c. high-injection roll-off current (A)
iqfh	1.0e6	nein	high-injection correction current (A)
tfh	1.0e6	nein	high-injection correction factor
ibes	1e-18	nein	BE saturation current (A)
mbe	1.0	nein	BE non-ideality factor
ires	0.0	nein	BE recombination saturation current (A)
mre	2.0	nein	BE recombination non-ideality factor
ibcs	0.0	nein	BC saturation current (A)
mbc	1.0	nein	BC non-ideality factor
cje0	1.0e-20	nein	Zero-bias BE depletion capacitance (F)
vde	0.9	nein	BE built-in voltage (V)
ze	0.5	nein	BE exponent factor
aje	2.5	nein	Ratio of maximum to zero-bias value
t0	0.0	nein	low current transit time at Vbici=0 (s)
dt0h	0.0	nein	Base width modulation contribution (s)
tbvl	0.0	nein	SCR width modulation contribution (s)
tef0	0.0	nein	Storage time in neutral emitter (s)
gte	1.0	nein	Exponent factor for emitter transit time
thcs	0.0	nein	Saturation time at high current densities (s)
ahc	0.1	nein	Smoothing factor for current dependence
tr	0.0	nein	Storage time at inverse operation (s)
rci0	150	nein	Low-field collector resistance under emitter (Ohm)
vlim	0.5	nein	Voltage dividing ohmic and satur.region (V)
vpt	100	nein	Punch-through voltage (V)
vces	0.1	nein	Saturation voltage (V)
cjci0	1.0e-20	nein	Total zero-bias BC depletion capacitance (F)
vdci	0.7	nein	BC built-in voltage (V)
zci	0.333	nein	BC exponent factor
vptci	100	nein	Punch-through voltage of BC junction (V)
cjcx0	1.0e-20	nein	Zero-bias external BC depletion capacitance (F)
vdcx	0.7	nein	External BC built-in voltage (V)
zcx	0.333	nein	External BC exponent factor
vptcx	100	nein	Punch-through voltage (V)
fbc	1.0	nein	Split factor = Cjci0/Cjc0
rbi0	0.0	nein	Internal base resistance at zero-bias (Ohm)
vr0e	2.5	nein	forward Early voltage (normalization volt.) (V)
vr0c	1.0e6	nein	forward Early voltage (normalization volt.) (V)
fgeo	0.656	nein	Geometry factor
rbx	0.0	nein	External base series resistance (Ohm)
rcx	0.0	nein	Emitter series resistance (Ohm)
re	0.0	nein	External collector series resistance (Ohm)
itss	0.0	nein	Substrate transistor transfer saturation current (A)
msf	1.0	nein	Substrate transistor transfer current non-ideality factor
iscs	0.0	nein	SC saturation current (A)
msc	1.0	nein	SC non-ideality factor
cjs0	1.0e-20	nein	Zero-bias SC depletion capacitance (F)
vds	0.3	nein	SC built-in voltage (V)
zs	0.3	nein	External SC exponent factor
vpts	100	nein	SC punch-through voltage (V)
cbcpar	0.0	nein	Collector-base isolation (overlap) capacitance (F)
cbepar	0.0	nein	Emitter-base oxide capacitance (F)
eavl	0.0	nein	Exponent factor
kavl	0.0	nein	Prefactor
kf	0.0	nein	flicker noise coefficient (M^(1-AF))
af	2.0	nein	flicker noise exponent factor
vgb	1.2	nein	Bandgap-voltage (V)
vge	1.17	nein	Effective emitter bandgap-voltage (V)
vgc	1.17	nein	Effective collector bandgap-voltage (V)
vgs	1.17	nein	Effective substrate bandgap-voltage (V)
f1vg	-1.02377e-4	nein	Coefficient K1 in T-dependent bandgap equation (V/K)
f2vg	4.3215e-4	nein	Coefficient K2 in T-dependent bandgap equation (V/K)
alt0	0.0	nein	Frist-order TC of tf0 (1/K)
kt0	0.0	nein	Second-order TC of tf0 (1/K^2)
zetact	3.0	nein	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	nein	Exponent coefficient in BE junction current temperature dependence
zetaci	0.0	nein	TC of epi-collector diffusivity
alvs	0.0	nein	Relative TC of satur.drift velocity (1/K)
alces	0.0	nein	Relative TC of vces (1/K)
zetarbi	0.0	nein	TC of internal base resistance
zetarbx	0.0	nein	TC of external base resistance
zetarcx	0.0	nein	TC of external collector resistance
zetare	0.0	nein	TC of emitter resistances
alkav	0.0	nein	TC of avalanche prefactor (1/K)
aleav	0.0	nein	TC of avalanche exponential factor (1/K)
flsh	0	nein	Flag for self-heating calculation
rth	0.0	nein	Thermal resistance (K/W)
cth	0.0	nein	Thermal capacitance (Ws/K)
tnom	27	nein	Temperature for which parameters are valid (C)
dt	0.0	nein	Temperature change for particular transistor (K)
Temp	26.85	nein	simulation temperature

Pnp Hicum L0 V1.12¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	pnp HICUM L0 v1.12
Beschreibung	HICUM Level 0 v1.12 verilog device
Schematic entry	`hic0_full`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	pnpsub_therm
Eigenschaften	86
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Typ	pnp	ja	polarity [npn, pnp]
is	1.0e-16	nein	(Modified) saturation current (A)
mcf	1.00	nein	Non-ideality coefficient of forward collector current
mcr	1.00	nein	Non-ideality coefficient of reverse collector current
vef	1.0e6	nein	forward Early voltage (normalization volt.) (V)
iqf	1.0e6	nein	forward d.c. high-injection roll-off current (A)
iqr	1.0e6	nein	inverse d.c. high-injection roll-off current (A)
iqfh	1.0e6	nein	high-injection correction current (A)
tfh	1.0e6	nein	high-injection correction factor
ibes	1e-18	nein	BE saturation current (A)
mbe	1.0	nein	BE non-ideality factor
ires	0.0	nein	BE recombination saturation current (A)
mre	2.0	nein	BE recombination non-ideality factor
ibcs	0.0	nein	BC saturation current (A)
mbc	1.0	nein	BC non-ideality factor
cje0	1.0e-20	nein	Zero-bias BE depletion capacitance (F)
vde	0.9	nein	BE built-in voltage (V)
ze	0.5	nein	BE exponent factor
aje	2.5	nein	Ratio of maximum to zero-bias value
t0	0.0	nein	low current transit time at Vbici=0 (s)
dt0h	0.0	nein	Base width modulation contribution (s)
tbvl	0.0	nein	SCR width modulation contribution (s)
tef0	0.0	nein	Storage time in neutral emitter (s)
gte	1.0	nein	Exponent factor for emitter transit time
thcs	0.0	nein	Saturation time at high current densities (s)
ahc	0.1	nein	Smoothing factor for current dependence
tr	0.0	nein	Storage time at inverse operation (s)
rci0	150	nein	Low-field collector resistance under emitter (Ohm)
vlim	0.5	nein	Voltage dividing ohmic and satur.region (V)
vpt	100	nein	Punch-through voltage (V)
vces	0.1	nein	Saturation voltage (V)
cjci0	1.0e-20	nein	Total zero-bias BC depletion capacitance (F)
vdci	0.7	nein	BC built-in voltage (V)
zci	0.333	nein	BC exponent factor
vptci	100	nein	Punch-through voltage of BC junction (V)
cjcx0	1.0e-20	nein	Zero-bias external BC depletion capacitance (F)
vdcx	0.7	nein	External BC built-in voltage (V)
zcx	0.333	nein	External BC exponent factor
vptcx	100	nein	Punch-through voltage (V)
fbc	1.0	nein	Split factor = Cjci0/Cjc0
rbi0	0.0	nein	Internal base resistance at zero-bias (Ohm)
vr0e	2.5	nein	forward Early voltage (normalization volt.) (V)
vr0c	1.0e6	nein	forward Early voltage (normalization volt.) (V)
fgeo	0.656	nein	Geometry factor
rbx	0.0	nein	External base series resistance (Ohm)
rcx	0.0	nein	Emitter series resistance (Ohm)
re	0.0	nein	External collector series resistance (Ohm)
itss	0.0	nein	Substrate transistor transfer saturation current (A)
msf	1.0	nein	Substrate transistor transfer current non-ideality factor
iscs	0.0	nein	SC saturation current (A)
msc	1.0	nein	SC non-ideality factor
cjs0	1.0e-20	nein	Zero-bias SC depletion capacitance (F)
vds	0.3	nein	SC built-in voltage (V)
zs	0.3	nein	External SC exponent factor
vpts	100	nein	SC punch-through voltage (V)
cbcpar	0.0	nein	Collector-base isolation (overlap) capacitance (F)
cbepar	0.0	nein	Emitter-base oxide capacitance (F)
eavl	0.0	nein	Exponent factor
kavl	0.0	nein	Prefactor
kf	0.0	nein	flicker noise coefficient (M^(1-AF))
af	2.0	nein	flicker noise exponent factor
vgb	1.2	nein	Bandgap-voltage (V)
vge	1.17	nein	Effective emitter bandgap-voltage (V)
vgc	1.17	nein	Effective collector bandgap-voltage (V)
vgs	1.17	nein	Effective substrate bandgap-voltage (V)
f1vg	-1.02377e-4	nein	Coefficient K1 in T-dependent bandgap equation (V/K)
f2vg	4.3215e-4	nein	Coefficient K2 in T-dependent bandgap equation (V/K)
alt0	0.0	nein	Frist-order TC of tf0 (1/K)
kt0	0.0	nein	Second-order TC of tf0 (1/K^2)
zetact	3.0	nein	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	nein	Exponent coefficient in BE junction current temperature dependence
zetaci	0.0	nein	TC of epi-collector diffusivity
alvs	0.0	nein	Relative TC of satur.drift velocity (1/K)
alces	0.0	nein	Relative TC of vces (1/K)
zetarbi	0.0	nein	TC of internal base resistance
zetarbx	0.0	nein	TC of external base resistance
zetarcx	0.0	nein	TC of external collector resistance
zetare	0.0	nein	TC of emitter resistances
alkav	0.0	nein	TC of avalanche prefactor (1/K)
aleav	0.0	nein	TC of avalanche exponential factor (1/K)
flsh	0	nein	Flag for self-heating calculation
rth	0.0	nein	Thermal resistance (K/W)
cth	0.0	nein	Thermal capacitance (Ws/K)
tnom	27	nein	Temperature for which parameters are valid (C)
dt	0.0	nein	Temperature change for particular transistor (K)
Temp	26.85	nein	simulation temperature

Potentiometer¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Potentiometer
Beschreibung	Potentiometer verilog device
Schematic entry	`potentiometer`
Netlist entry	`POT`
Typ	AnalogComponent
Bitmap file	potentiometer
Eigenschaften	11
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
R_pot	1e4	nein	nominal device resistance (Ohm)
Rotation	120	nein	shaft/wiper arm rotation (degrees)
Taper_Coeff	0	nein	resistive law taper coefficient
LEVEL	1	nein	device type selector [1, 2, 3]
Max_Rotation	240.0	nein	maximum shaft/wiper rotation (degrees)
Conformity	0.2	nein	conformity error (%)
Linearity	0.2	nein	linearity error (%)
Contact_Res	1	nein	wiper arm contact resistance (Ohm)
Temp_Coeff	100	nein	resistance temperature coefficient (PPM/Celsius)
Tnom	26.85	nein	parameter measurement temperature (Celsius)
Temp	26.85	nein	simulation temperature

Mesfet¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	MESFET
Beschreibung	MESFET verilog device
Schematic entry	`MESFET`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	MESFET
Eigenschaften	52
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
LEVEL	1	nein	model selector
Vto	-1.8	nein	pinch-off voltage (V)
Beta	3e-3	nein	transconductance parameter (A/(V*V))
Alpha	2.25	nein	saturation voltage parameter (1/V)
Lambda	0.05	nein	channel length modulation parameter (1/V)
B	0.3	nein	doping profile parameter (1/V)
Qp	2.1	nein	power law exponent parameter
Delta	0.1	nein	power feedback parameter (1/W)
Vmax	0.5	nein	maximum junction voltage limit before capacitance limiting (V)
Vdelta1	0.3	nein	capacitance saturation transition voltage (V)
Vdelta2	0.2	nein	capacitance threshold transition voltage (V)
Gamma	0.015	nein	dc drain pull coefficient
Nsc	1	nein	subthreshold conductance parameter
Is	1e-14	nein	diode saturation current (I)
N	1	nein	diode emission coefficient
Vbi	1.0	nein	built-in gate potential (V)
Bv	60	nein	gate-drain junction reverse bias breakdown voltage (V)
Xti	3.0	nein	diode saturation current temperature coefficient
Fc	0.5	nein	Sperrschichtkapazitäts-Linearisierungskoeffizient
Tau	1e-9	nein	transit time under gate (s)
Rin	1e-3	nein	channel resistance (Ohm)
Area	1	nein	area factor
Eg	1.11	nein	energy gap (eV)
M	0.5	nein	Gradationskoeffizient
Cgd	0.2e-12	nein	zero bias gate-drain junction capacitance (F)
Cgs	1e-12	nein	zero bias gate-source junction capacitance (F)
Cds	1e-12	nein	zero bias drain-source junction capacitance (F)
Betatc	0	nein	Beta temperature coefficient (%/Celsius)
Alphatc	0	nein	Alpha temperature coefficient (%/Celsius)
Gammatc	0	nein	Gamma temperature coefficient (%/Celsius)
Ng	2.65	nein	Subthreshold slope gate parameter
Nd	-0.19	nein	subthreshold drain pull parameter
ILEVELS	3	nein	gate-source current equation selector
ILEVELD	3	nein	gate-drain current equation selector
QLEVELS	2	nein	gate-source charge equation selector
QLEVELD	2	nein	gate-drain charge equation selector
QLEVELDS	2	nein	drain-source charge equation selector
Vtotc	0	nein	Vto temperature coefficient
Rg	5.1	nein	gate resistance (Ohms)
Rd	1.3	nein	drain resistance (Ohms)
Rs	1.3	nein	source resistance (Ohms)
Rgtc	0	nein	gate resistance temperature coefficient (1/Celsius)
Rdtc	0	nein	drain resistance temperature coefficient (1/Celsius)
Rstc	0	nein	source resistance temperature coefficient (1/Celsius)
Ibv	1e-3	nein	gate reverse breakdown currrent (A)
Rf	10	nein	forward bias slope resistance (Ohms)
R1	10	nein	breakdown slope resistance (Ohms)
Af	1	nein	1/f-Rauschexponent
Kf	0	nein	1/f-Rauschkoeffizient
Gdsnoi	1	nein	shot noise coefficient
Tnom	26.85	nein	parameter measurement temperature (Celsius)
Temp	26.85	nein	simulation temperature

Epfl-Ekv Nmos 2.6¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	EPFL-EKV NMOS 2.6
Beschreibung	EPFL-EKV MOS 2.6 verilog device
Schematic entry	`EKV26MOS`
Netlist entry	`M`
Typ	AnalogComponent
Bitmap file	EKV26nMOS
Eigenschaften	55
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Typ	nmos	ja	polarity [nmos, pmos]
LEVEL	1	nein	long = 1, short = 2
L	0.5e-6	nein	length parameter (m)
W	10e-6	nein	Width parameter (m)
Np	1.0	nein	parallel multiple device number
Ns	1.0	nein	series multiple device number
Cox	3.45e-3	nein	gate oxide capacitance per unit area (F/m**2)
Xj	0.15e-6	nein	metallurgical junction depth (m)
Dw	-0.02e-6	nein	channel width correction (m)
Dl	-0.05e-6	nein	channel length correction (m)
Vto	0.6	nein	long channel threshold voltage (V)
Gamma	0.71	nein	body effect parameter (V**(1/2))
Phi	0.97	nein	bulk Fermi potential (V)
Kp	150e-6	nein	transconductance parameter (A/V**2)
Theta	50e-3	nein	mobility reduction coefficient (1/V)
EO	88.0e6	nein	mobility coefficient (V/m)
Ucrit	4.5e6	nein	longitudinal critical field (V/m)
Lambda	0.23	nein	depletion length coefficient
Weta	0.05	nein	narrow-channel effect coefficient
Leta	0.28	nein	longitudinal critical field
Q0	280e-6	nein	reverse short channel charge density (As/m*2)
Lk	0.5e-6	nein	characteristic length (m)
Tcv	1.5e-3	nein	threshold voltage temperature coefficient (V/K)
Bex	-1.5	nein	mobility temperature coefficient
Ucex	1.7	nein	Longitudinal critical field temperature exponent
Ibbt	0.0	nein	Ibb temperature coefficient (1/K)
Hdif	0.9e-6	nein	heavily doped diffusion length (m)
Rsh	510.0	nein	drain/source diffusion sheet resistance (Ohm/square)
Rsc	0.0	nein	source contact resistance (Ohm)
Rdc	0.0	nein	drain contact resistance (Ohm)
Cgso	1.5e-10	nein	gate to source overlap capacitance (F/m)
Cgdo	1.5e-10	nein	gate to drain overlap capacitance (F/m)
Cgbo	4.0e-10	nein	gate to bulk overlap capacitance (F/m)
Iba	2e8	nein	first impact ionization coefficient (1/m)
Ibb	3.5e8	nein	second impact ionization coefficient (V/m)
Ibn	1.0	nein	saturation voltage factor for impact ionization
Kf	1.0e-27	nein	1/f-Rauschkoeffizient
Af	1.0	nein	1/f-Rauschexponent
Avto	0.0	nein	area related theshold voltage mismatch parameter (V*m)
Akp	0.0	nein	area related gain mismatch parameter (m)
Agamma	0.0	nein	area related body effect mismatch parameter (sqrt(V)*m)
N	1.0	nein	Idealiätsfaktor
Is	1e-14	nein	saturation current (A)
Bv	100	nein	reverse breakdown voltage (V)
Ibv	1e-3	nein	current at reverse breakdown voltage (A)
Vj	1.0	nein	junction potential (V)
Cj0	300e-15	nein	zero-bias junction capacitance (F)
M	0.5	nein	Gradationskoeffizient
Area	1.0	nein	diode relative area
Fc	0.5	nein	Sperrschichtkapazitäts-Linearisierungskoeffizient
Tt	0.1e-9	nein	transit time (s)
Xti	3.0	nein	Temperaturexponent des Sättigungsstroms
Xpart	0.4	nein	charge partition parameter
Tnom	26.85	nein	parameter measurement temperature (Celsius)
Temp	26.85	nein	simulation temperature

Epfl-Ekv Pmos 2.6¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	EPFL-EKV PMOS 2.6
Beschreibung	EPFL-EKV MOS 2.6 verilog device
Schematic entry	`EKV26MOS`
Netlist entry	`M`
Typ	AnalogComponent
Bitmap file	EKV26pMOS
Eigenschaften	55
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Typ	pmos	ja	polarity [nmos, pmos]
LEVEL	1	nein	long = 1, short = 2
L	0.5e-6	nein	length parameter (m)
W	10e-6	nein	Width parameter (m)
Np	1.0	nein	parallel multiple device number
Ns	1.0	nein	series multiple device number
Cox	3.45e-3	nein	gate oxide capacitance per unit area (F/m**2)
Xj	0.15e-6	nein	metallurgical junction depth (m)
Dw	-0.03e-6	nein	channel width correction (m)
Dl	-0.05e-6	nein	channel length correction (m)
Vto	-0.55	nein	long channel threshold voltage (V)
Gamma	0.69	nein	body effect parameter (V**(1/2))
Phi	0.87	nein	bulk Fermi potential (V)
Kp	35e-6	nein	transconductance parameter (A/V**2)
Theta	50e-3	nein	mobility reduction coefficient (1/V)
EO	51.0e6	nein	mobility coefficient (V/m)
Ucrit	18.0e6	nein	longitudinal critical field (V/m)
Lambda	1.1	nein	depletion length coefficient
Weta	0.0	nein	narrow-channel effect coefficient
Leta	0.45	nein	longitudinal critical field
Q0	200e-6	nein	reverse short channel charge density (As/m*2)
Lk	0.6e-6	nein	characteristic length (m)
Tcv	-1.4e-3	nein	threshold voltage temperature coefficient (V/K)
Bex	-1.4	nein	mobility temperature coefficient
Ucex	2.0	nein	Longitudinal critical field temperature exponent
Ibbt	0.0	nein	Ibb temperature coefficient (1/K)
Hdif	0.9e-6	nein	heavily doped diffusion length (m)
Rsh	990.0	nein	drain/source diffusion sheet resistance (Ohm/square)
Rsc	0.0	nein	source contact resistance (Ohm)
Rdc	0.0	nein	drain contact resistance (Ohm)
Cgso	1.5e-10	nein	gate to source overlap capacitance (F/m)
Cgdo	1.5e-10	nein	gate to drain overlap capacitance (F/m)
Cgbo	4.0e-10	nein	gate to bulk overlap capacitance (F/m)
Iba	0.0	nein	first impact ionization coefficient (1/m)
Ibb	3.0e8	nein	second impact ionization coefficient (V/m)
Ibn	1.0	nein	saturation voltage factor for impact ionization
Kf	1.0e-28	nein	1/f-Rauschkoeffizient
Af	1.0	nein	1/f-Rauschexponent
Avto	0.0	nein	area related theshold voltage mismatch parameter (V*m)
Akp	0.0	nein	area related gain mismatch parameter (m)
Agamma	0.0	nein	area related body effect mismatch parameter (sqrt(V)*m)
N	1.0	nein	Idealiätsfaktor
Is	1e-14	nein	saturation current (A)
Bv	100	nein	reverse breakdown voltage (V)
Ibv	1e-3	nein	current at reverse breakdown voltage (A)
Vj	1.0	nein	junction potential (V)
Cj0	300e-15	nein	zero-bias junction capacitance (F)
M	0.5	nein	Gradationskoeffizient
Area	1.0	nein	diode relative area
Fc	0.5	nein	Sperrschichtkapazitäts-Linearisierungskoeffizient
Tt	0.1e-9	nein	transit time (s)
Xti	3.0	nein	Temperaturexponent des Sättigungsstroms
Xpart	0.4	nein	charge partition parameter
Tnom	26.85	nein	parameter measurement temperature (Celsius)
Temp	26.85	nein	simulation temperature

Bsim3V34Nmos¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	bsim3v34nMOS
Beschreibung	bsim3v34nMOS verilog device
Schematic entry	`bsim3v34nMOS`
Netlist entry	`BSIM3_`
Typ	AnalogComponent
Bitmap file	bsim3v34nMOS
Eigenschaften	408
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
L	0.35e-6	nein	-
W	5.0e-6	nein	-
PS	8.0e-6	nein	-
PD	8.0e-6	nein	-
AS	12.0e-12	nein	-
AD	12.0e-12	nein	-
NRS	10.0	nein	-
NRD	10.0	nein	-
NQSMOD	0	nein	-
GMIN	1e-12	nein	-
VERSION	3.24	nein	-
PARAMCHK	0	nein	-
MOBMOD	1	nein	-
CAPMOD	3	nein	-
NOIMOD	4	nein	-
BINUNIT	1	nein	-
TOX	150.0e-10	nein	-
TOXM	150.0e-10	nein	-
CDSC	2.4e-4	nein	-
CDSCB	0.0	nein	-
CDSCD	0.0	nein	-
CIT	0.0	nein	-
NFACTOR	1	nein	-
XJ	0.15e-6	nein	-
VSAT	8.0e4	nein	-
AT	3.3e4	nein	-
A0	1.0	nein	-
AGS	0.0	nein	-
A1	0.0	nein	-
A2	1.0	nein	-
KETA	-0.047	nein	-
NSUB	-99.0	nein	-
NCH	-99.0	nein	-
NGATE	0	nein	-
GAMMA1	-99.0	nein	-
GAMMA2	-99.0	nein	-
VBX	-99.0	nein	-
VBM	-3.0	nein	-
XT	-99.0	nein	-
K1	-99.0	nein	-
KT1	-0.11	nein	-
KT1L	0.0	nein	-
KT2	0.022	nein	-
K2	-99.0	nein	-
K3	80.0	nein	-
K3B	0.0	nein	-
W0	2.5e-6	nein	-
NLX	1.74e-7	nein	-
DVT0	2.2	nein	-
DVT1	0.53	nein	-
DVT2	-0.032	nein	-
DVT0W	0.0	nein	-
DVT1W	5.3e6	nein	-
DVT2W	-0.032	nein	-
DROUT	0.56	nein	-
DSUB	0.56	nein	-
VTHO	0.7	nein	-
VTH0	0.7	nein	-
UA	2.25e-9	nein	-
UA1	4.31e-9	nein	-
UB	5.87e-19	nein	-
UB1	-7.61e-18	nein	-
UC	-99.0	nein	-
UC1	-99.0	nein	-
U0	-99.0	nein	-
UTE	-1.5	nein	-
VOFF	-0.08	nein	-
TNOM	26.85	nein	-
CGSO	-99.0	nein	-
CGDO	-99.0	nein	-
CGBO	-99.0	nein	-
XPART	0.4	nein	-
ELM	5.0	nein	-
DELTA	0.01	nein	-
RSH	0.0	nein	-
RDSW	0	nein	-
PRWG	0.0	nein	-
PRWB	0.0	nein	-
PRT	0.0	nein	-
ETA0	0.08	nein	-
ETAB	-0.07	nein	-
PCLM	1.3	nein	-
PDIBLC1	0.39	nein	-
PDIBLC2	0.0086	nein	-
PDIBLCB	0.0	nein	-
PSCBE1	4.24e8	nein	-
PSCBE2	1.0e-5	nein	-
PVAG	0.0	nein	-
JS	1.0E-4	nein	-
JSW	0.0	nein	-
PB	1.0	nein	-
NJ	1.0	nein	-
XTI	3.0	nein	-
MJ	0.5	nein	-
PBSW	1.0	nein	-
MJSW	0.33	nein	-
PBSWG	1.0	nein	-
MJSWG	0.33	nein	-
CJ	5.0E-4	nein	-
VFBCV	-1.0	nein	-
VFB	-99.0	nein	-
CJSW	5.0E-10	nein	-
CJSWG	5.0e-10	nein	-
TPB	0.0	nein	-
TCJ	0.0	nein	-
TPBSW	0.0	nein	-
TCJSW	0.0	nein	-
TPBSWG	0.0	nein	-
TCJSWG	0.0	nein	-
ACDE	1.0	nein	-
MOIN	15.0	nein	-
NOFF	1.0	nein	-
VOFFCV	0.0	nein	-
LINT	0.0	nein	-
LL	0.0	nein	-
LLC	0.0	nein	-
LLN	1.0	nein	-
LW	0.0	nein	-
LWC	0.0	nein	-
LWN	1.0	nein	-
LWL	0.0	nein	-
LWLC	0.0	nein	-
LMIN	0.0	nein	-
LMAX	1.0	nein	-
WR	1.0	nein	-
WINT	0.0	nein	-
DWG	0.0	nein	-
DWB	0.0	nein	-
WL	0.0	nein	-
WLC	0.0	nein	-
WLN	1.0	nein	-
WW	0.0	nein	-
WWC	0.0	nein	-
WWN	1.0	nein	-
WWL	0.0	nein	-
WWLC	0.0	nein	-
WMIN	0.0	nein	-
WMAX	1.0	nein	-
B0	0.0	nein	-
B1	0.0	nein	-
CGSL	0.0	nein	-
CGDL	0.0	nein	-
CKAPPA	0.6	nein	-
CF	-99.0	nein	-
CLC	0.1e-6	nein	-
CLE	0.6	nein	-
DWC	0.0	nein	-
DLC	-99.0	nein	-
ALPHA0	0.0	nein	-
ALPHA1	0.0	nein	-
BETA0	30.0	nein	-
IJTH	0.1	nein	-
LCDSC	0.0	nein	-
LCDSCB	0.0	nein	-
LCDSCD	0.0	nein	-
LCIT	0.0	nein	-
LNFACTOR	0.0	nein	-
LXJ	0.0	nein	-
LVSAT	0.0	nein	-
LAT	0.0	nein	-
LA0	0.0	nein	-
LAGS	0.0	nein	-
LA1	0.0	nein	-
LA2	0.0	nein	-
LKETA	0.0	nein	-
LNSUB	0.0	nein	-
LNCH	0.0	nein	-
LNGATE	0.0	nein	-
LGAMMA1	-99.0	nein	-
LGAMMA2	-99.0	nein	-
LVBX	-99.0	nein	-
LVBM	0.0	nein	-
LXT	0.0	nein	-
LK1	-99.0	nein	-
LKT1	0.0	nein	-
LKT1L	0.0	nein	-
LKT2	0.0	nein	-
LK2	-99.0	nein	-
LK3	0.0	nein	-
LK3B	0.0	nein	-
LW0	0.0	nein	-
LNLX	0.0	nein	-
LDVT0	0.0	nein	-
LDVT1	0.0	nein	-
LDVT2	0.0	nein	-
LDVT0W	0.0	nein	-
LDVT1W	0.0	nein	-
LDVT2W	0.0	nein	-
LDROUT	0.0	nein	-
LDSUB	0.0	nein	-
LVTH0	0.0	nein	-
LVTHO	0.0	nein	-
LUA	0.0	nein	-
LUA1	0.0	nein	-
LUB	0.0	nein	-
LUB1	0.0	nein	-
LUC	0.0	nein	-
LUC1	0.0	nein	-
LU0	0.0	nein	-
LUTE	0.0	nein	-
LVOFF	0.0	nein	-
LELM	0.0	nein	-
LDELTA	0.0	nein	-
LRDSW	0.0	nein	-
LPRWG	0.0	nein	-
LPRWB	0.0	nein	-
LPRT	0.0	nein	-
LETA0	0.0	nein	-
LETAB	0.0	nein	-
LPCLM	0.0	nein	-
LPDIBLC1	0.0	nein	-
LPDIBLC2	0.0	nein	-
LPDIBLCB	0.0	nein	-
LPSCBE1	0.0	nein	-
LPSCBE2	0.0	nein	-
LPVAG	0.0	nein	-
LWR	0.0	nein	-
LDWG	0.0	nein	-
LDWB	0.0	nein	-
LB0	0.0	nein	-
LB1	0.0	nein	-
LCGSL	0.0	nein	-
LCGDL	0.0	nein	-
LCKAPPA	0.0	nein	-
LCF	0.0	nein	-
LCLC	0.0	nein	-
LCLE	0.0	nein	-
LALPHA0	0.0	nein	-
LALPHA1	0.0	nein	-
LBETA0	0.0	nein	-
LVFBCV	0.0	nein	-
LVFB	0.0	nein	-
LACDE	0.0	nein	-
LMOIN	0.0	nein	-
LNOFF	0.0	nein	-
LVOFFCV	0.0	nein	-
WCDSC	0.0	nein	-
WCDSCB	0.0	nein	-
WCDSCD	0.0	nein	-
WCIT	0.0	nein	-
WNFACTOR	0.0	nein	-
WXJ	0.0	nein	-
WVSAT	0.0	nein	-
WAT	0.0	nein	-
WA0	0.0	nein	-
WAGS	0.0	nein	-
WA1	0.0	nein	-
WA2	0.0	nein	-
WKETA	0.0	nein	-
WNSUB	0.0	nein	-
WNCH	0.0	nein	-
WNGATE	0.0	nein	-
WGAMMA1	-99.0	nein	-
WGAMMA2	-99.0	nein	-
WVBX	-99.0	nein	-
WVBM	0.0	nein	-
WXT	0.0	nein	-
WK1	-99.0	nein	-
WKT1	0.0	nein	-
WKT1L	0.0	nein	-
WKT2	0.0	nein	-
WK2	-99.0	nein	-
WK3	0.0	nein	-
WK3B	0.0	nein	-
WW0	0.0	nein	-
WNLX	0.0	nein	-
WDVT0	0.0	nein	-
WDVT1	0.0	nein	-
WDVT2	0.0	nein	-
WDVT0W	0.0	nein	-
WDVT1W	0.0	nein	-
WDVT2W	0.0	nein	-
WDROUT	0.0	nein	-
WDSUB	0.0	nein	-
WVTH0	0.0	nein	-
WVTHO	0.0	nein	-
WUA	0.0	nein	-
WUA1	0.0	nein	-
WUB	0.0	nein	-
WUB1	0.0	nein	-
WUC	0.0	nein	-
WUC1	0.0	nein	-
WU0	0.0	nein	-
WUTE	0.0	nein	-
WVOFF	0.0	nein	-
WELM	0.0	nein	-
WDELTA	0.0	nein	-
WRDSW	0.0	nein	-
WPRWG	0.0	nein	-
WPRWB	0.0	nein	-
WPRT	0.0	nein	-
WETA0	0.0	nein	-
WETAB	0.0	nein	-
WPCLM	0.0	nein	-
WPDIBLC1	0.0	nein	-
WPDIBLC2	0.0	nein	-
WPDIBLCB	0.0	nein	-
WPSCBE1	0.0	nein	-
WPSCBE2	0.0	nein	-
WPVAG	0.0	nein	-
WWR	0.0	nein	-
WDWG	0.0	nein	-
WDWB	0.0	nein	-
WB0	0.0	nein	-
WB1	0.0	nein	-
WCGSL	0.0	nein	-
WCGDL	0.0	nein	-
WCKAPPA	0.0	nein	-
WCF	0.0	nein	-
WCLC	0.0	nein	-
WCLE	0.0	nein	-
WALPHA0	0.0	nein	-
WALPHA1	0.0	nein	-
WBETA0	0.0	nein	-
WVFBCV	0.0	nein	-
WVFB	0.0	nein	-
WACDE	0.0	nein	-
WMOIN	0.0	nein	-
WNOFF	0.0	nein	-
WVOFFCV	0.0	nein	-
PCDSC	0.0	nein	-
PCDSCB	0.0	nein	-
PCDSCD	0.0	nein	-
PCIT	0.0	nein	-
PNFACTOR	0.0	nein	-
PXJ	0.0	nein	-
PVSAT	0.0	nein	-
PAT	0.0	nein	-
PA0	0.0	nein	-
PAGS	0.0	nein	-
PA1	0.0	nein	-
PA2	0.0	nein	-
PKETA	0.0	nein	-
PNSUB	0.0	nein	-
PNCH	0.0	nein	-
PNGATE	0.0	nein	-
PGAMMA1	-99.0	nein	-
PGAMMA2	-99.0	nein	-
PVBX	-99.0	nein	-
PVBM	0.0	nein	-
PXT	0.0	nein	-
PK1	-99.0	nein	-
PKT1	0.0	nein	-
PKT1L	0.0	nein	-
PKT2	0.0	nein	-
PK2	-99.0	nein	-
PK3	0.0	nein	-
PK3B	0.0	nein	-
PW0	0.0	nein	-
PNLX	0.0	nein	-
PDVT0	0.0	nein	-
PDVT1	0.0	nein	-
PDVT2	0.0	nein	-
PDVT0W	0.0	nein	-
PDVT1W	0.0	nein	-
PDVT2W	0.0	nein	-
PDROUT	0.0	nein	-
PDSUB	0.0	nein	-
PVTH0	0.0	nein	-
PVTHO	0.0	nein	-
PUA	0.0	nein	-
PUA1	0.0	nein	-
PUB	0.0	nein	-
PUB1	0.0	nein	-
PUC	0.0	nein	-
PUC1	0.0	nein	-
PU0	0.0	nein	-
PUTE	0.0	nein	-
PVOFF	0.0	nein	-
PELM	0.0	nein	-
PDELTA	0.0	nein	-
PRDSW	0.0	nein	-
PPRWG	0.0	nein	-
PPRWB	0.0	nein	-
PPRT	0.0	nein	-
PETA0	0.0	nein	-
PETAB	0.0	nein	-
PPCLM	0.0	nein	-
PPDIBLC1	0.0	nein	-
PPDIBLC2	0.0	nein	-
PPDIBLCB	0.0	nein	-
PPSCBE1	0.0	nein	-
PPSCBE2	0.0	nein	-
PPVAG	0.0	nein	-
PWR	0.0	nein	-
PDWG	0.0	nein	-
PDWB	0.0	nein	-
PB0	0.0	nein	-
PB1	0.0	nein	-
PCGSL	0.0	nein	-
PCGDL	0.0	nein	-
PCKAPPA	0.0	nein	-
PCF	0.0	nein	-
PCLC	0.0	nein	-
PCLE	0.0	nein	-
PALPHA0	0.0	nein	-
PALPHA1	0.0	nein	-
PBETA0	0.0	nein	-
PVFBCV	0.0	nein	-
PVFB	0.0	nein	-
PACDE	0.0	nein	-
PMOIN	0.0	nein	-
PNOFF	0.0	nein	-
PVOFFCV	0.0	nein	-
KF	0.0	nein	-
AF	1.0	nein	-
EF	1.0	nein	-
Temp	26.85	nein	simulation temperature

Bsim3V34Pmos¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	bsim3v34pMOS
Beschreibung	bsim3v34pMOS verilog device
Schematic entry	`bsim3v34pMOS`
Netlist entry	`BSIM3_`
Typ	AnalogComponent
Bitmap file	bsim3v34pMOS
Eigenschaften	408
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
L	3.5e-6	nein	-
W	5.0e-6	nein	-
PS	8.0e-6	nein	-
PD	8.0e-6	nein	-
AS	12.0e-12	nein	-
AD	12.0e-12	nein	-
NRS	10.0	nein	-
NRD	10.0	nein	-
NQSMOD	0	nein	-
GMIN	1e-12	nein	-
VERSION	3.24	nein	-
PARAMCHK	0	nein	-
MOBMOD	1	nein	-
CAPMOD	3	nein	-
NOIMOD	4	nein	-
BINUNIT	1	nein	-
TOX	150.0e-10	nein	-
TOXM	150.0e-10	nein	-
CDSC	2.4e-4	nein	-
CDSCB	0.0	nein	-
CDSCD	0.0	nein	-
CIT	0.0	nein	-
NFACTOR	1	nein	-
XJ	0.15e-6	nein	-
VSAT	8.0e4	nein	-
AT	3.3e4	nein	-
A0	1.0	nein	-
AGS	0.0	nein	-
A1	0.0	nein	-
A2	1.0	nein	-
KETA	-0.047	nein	-
NSUB	-99.0	nein	-
NCH	-99.0	nein	-
NGATE	0	nein	-
GAMMA1	-99.0	nein	-
GAMMA2	-99.0	nein	-
VBX	-99.0	nein	-
VBM	-3.0	nein	-
XT	-99.0	nein	-
K1	-99.0	nein	-
KT1	-0.11	nein	-
KT1L	0.0	nein	-
KT2	0.022	nein	-
K2	-99.0	nein	-
K3	80.0	nein	-
K3B	0.0	nein	-
W0	2.5e-6	nein	-
NLX	1.74e-7	nein	-
DVT0	2.2	nein	-
DVT1	0.53	nein	-
DVT2	-0.032	nein	-
DVT0W	0.0	nein	-
DVT1W	5.3e6	nein	-
DVT2W	-0.032	nein	-
DROUT	0.56	nein	-
DSUB	0.56	nein	-
VTHO	-0.7	nein	-
VTH0	-0.7	nein	-
UA	2.25e-9	nein	-
UA1	4.31e-9	nein	-
UB	5.87e-19	nein	-
UB1	-7.61e-18	nein	-
UC	-99.0	nein	-
UC1	-99.0	nein	-
U0	-99.0	nein	-
UTE	-1.5	nein	-
VOFF	-0.08	nein	-
TNOM	26.85	nein	-
CGSO	-99.0	nein	-
CGDO	-99.0	nein	-
CGBO	-99.0	nein	-
XPART	0.4	nein	-
ELM	5.0	nein	-
DELTA	0.01	nein	-
RSH	0.0	nein	-
RDSW	0	nein	-
PRWG	0.0	nein	-
PRWB	0.0	nein	-
PRT	0.0	nein	-
ETA0	0.08	nein	-
ETAB	-0.07	nein	-
PCLM	1.3	nein	-
PDIBLC1	0.39	nein	-
PDIBLC2	0.0086	nein	-
PDIBLCB	0.0	nein	-
PSCBE1	4.24e8	nein	-
PSCBE2	1.0e-5	nein	-
PVAG	0.0	nein	-
JS	1.0E-4	nein	-
JSW	0.0	nein	-
PB	1.0	nein	-
NJ	1.0	nein	-
XTI	3.0	nein	-
MJ	0.5	nein	-
PBSW	1.0	nein	-
MJSW	0.33	nein	-
PBSWG	1.0	nein	-
MJSWG	0.33	nein	-
CJ	5.0E-4	nein	-
VFBCV	-1.0	nein	-
VFB	-99.0	nein	-
CJSW	5.0E-10	nein	-
CJSWG	5.0e-10	nein	-
TPB	0.0	nein	-
TCJ	0.0	nein	-
TPBSW	0.0	nein	-
TCJSW	0.0	nein	-
TPBSWG	0.0	nein	-
TCJSWG	0.0	nein	-
ACDE	1.0	nein	-
MOIN	15.0	nein	-
NOFF	1.0	nein	-
VOFFCV	0.0	nein	-
LINT	0.0	nein	-
LL	0.0	nein	-
LLC	0.0	nein	-
LLN	1.0	nein	-
LW	0.0	nein	-
LWC	0.0	nein	-
LWN	1.0	nein	-
LWL	0.0	nein	-
LWLC	0.0	nein	-
LMIN	0.0	nein	-
LMAX	1.0	nein	-
WR	1.0	nein	-
WINT	0.0	nein	-
DWG	0.0	nein	-
DWB	0.0	nein	-
WL	0.0	nein	-
WLC	0.0	nein	-
WLN	1.0	nein	-
WW	0.0	nein	-
WWC	0.0	nein	-
WWN	1.0	nein	-
WWL	0.0	nein	-
WWLC	0.0	nein	-
WMIN	0.0	nein	-
WMAX	1.0	nein	-
B0	0.0	nein	-
B1	0.0	nein	-
CGSL	0.0	nein	-
CGDL	0.0	nein	-
CKAPPA	0.6	nein	-
CF	-99.0	nein	-
CLC	0.1e-6	nein	-
CLE	0.6	nein	-
DWC	0.0	nein	-
DLC	-99.0	nein	-
ALPHA0	0.0	nein	-
ALPHA1	0.0	nein	-
BETA0	30.0	nein	-
IJTH	0.1	nein	-
LCDSC	0.0	nein	-
LCDSCB	0.0	nein	-
LCDSCD	0.0	nein	-
LCIT	0.0	nein	-
LNFACTOR	0.0	nein	-
LXJ	0.0	nein	-
LVSAT	0.0	nein	-
LAT	0.0	nein	-
LA0	0.0	nein	-
LAGS	0.0	nein	-
LA1	0.0	nein	-
LA2	0.0	nein	-
LKETA	0.0	nein	-
LNSUB	0.0	nein	-
LNCH	0.0	nein	-
LNGATE	0.0	nein	-
LGAMMA1	-99.0	nein	-
LGAMMA2	-99.0	nein	-
LVBX	-99.0	nein	-
LVBM	0.0	nein	-
LXT	0.0	nein	-
LK1	-99.0	nein	-
LKT1	0.0	nein	-
LKT1L	0.0	nein	-
LKT2	0.0	nein	-
LK2	-99.0	nein	-
LK3	0.0	nein	-
LK3B	0.0	nein	-
LW0	0.0	nein	-
LNLX	0.0	nein	-
LDVT0	0.0	nein	-
LDVT1	0.0	nein	-
LDVT2	0.0	nein	-
LDVT0W	0.0	nein	-
LDVT1W	0.0	nein	-
LDVT2W	0.0	nein	-
LDROUT	0.0	nein	-
LDSUB	0.0	nein	-
LVTH0	0.0	nein	-
LVTHO	0.0	nein	-
LUA	0.0	nein	-
LUA1	0.0	nein	-
LUB	0.0	nein	-
LUB1	0.0	nein	-
LUC	0.0	nein	-
LUC1	0.0	nein	-
LU0	0.0	nein	-
LUTE	0.0	nein	-
LVOFF	0.0	nein	-
LELM	0.0	nein	-
LDELTA	0.0	nein	-
LRDSW	0.0	nein	-
LPRWG	0.0	nein	-
LPRWB	0.0	nein	-
LPRT	0.0	nein	-
LETA0	0.0	nein	-
LETAB	0.0	nein	-
LPCLM	0.0	nein	-
LPDIBLC1	0.0	nein	-
LPDIBLC2	0.0	nein	-
LPDIBLCB	0.0	nein	-
LPSCBE1	0.0	nein	-
LPSCBE2	0.0	nein	-
LPVAG	0.0	nein	-
LWR	0.0	nein	-
LDWG	0.0	nein	-
LDWB	0.0	nein	-
LB0	0.0	nein	-
LB1	0.0	nein	-
LCGSL	0.0	nein	-
LCGDL	0.0	nein	-
LCKAPPA	0.0	nein	-
LCF	0.0	nein	-
LCLC	0.0	nein	-
LCLE	0.0	nein	-
LALPHA0	0.0	nein	-
LALPHA1	0.0	nein	-
LBETA0	0.0	nein	-
LVFBCV	0.0	nein	-
LVFB	0.0	nein	-
LACDE	0.0	nein	-
LMOIN	0.0	nein	-
LNOFF	0.0	nein	-
LVOFFCV	0.0	nein	-
WCDSC	0.0	nein	-
WCDSCB	0.0	nein	-
WCDSCD	0.0	nein	-
WCIT	0.0	nein	-
WNFACTOR	0.0	nein	-
WXJ	0.0	nein	-
WVSAT	0.0	nein	-
WAT	0.0	nein	-
WA0	0.0	nein	-
WAGS	0.0	nein	-
WA1	0.0	nein	-
WA2	0.0	nein	-
WKETA	0.0	nein	-
WNSUB	0.0	nein	-
WNCH	0.0	nein	-
WNGATE	0.0	nein	-
WGAMMA1	-99.0	nein	-
WGAMMA2	-99.0	nein	-
WVBX	-99.0	nein	-
WVBM	0.0	nein	-
WXT	0.0	nein	-
WK1	-99.0	nein	-
WKT1	0.0	nein	-
WKT1L	0.0	nein	-
WKT2	0.0	nein	-
WK2	-99.0	nein	-
WK3	0.0	nein	-
WK3B	0.0	nein	-
WW0	0.0	nein	-
WNLX	0.0	nein	-
WDVT0	0.0	nein	-
WDVT1	0.0	nein	-
WDVT2	0.0	nein	-
WDVT0W	0.0	nein	-
WDVT1W	0.0	nein	-
WDVT2W	0.0	nein	-
WDROUT	0.0	nein	-
WDSUB	0.0	nein	-
WVTH0	0.0	nein	-
WVTHO	0.0	nein	-
WUA	0.0	nein	-
WUA1	0.0	nein	-
WUB	0.0	nein	-
WUB1	0.0	nein	-
WUC	0.0	nein	-
WUC1	0.0	nein	-
WU0	0.0	nein	-
WUTE	0.0	nein	-
WVOFF	0.0	nein	-
WELM	0.0	nein	-
WDELTA	0.0	nein	-
WRDSW	0.0	nein	-
WPRWG	0.0	nein	-
WPRWB	0.0	nein	-
WPRT	0.0	nein	-
WETA0	0.0	nein	-
WETAB	0.0	nein	-
WPCLM	0.0	nein	-
WPDIBLC1	0.0	nein	-
WPDIBLC2	0.0	nein	-
WPDIBLCB	0.0	nein	-
WPSCBE1	0.0	nein	-
WPSCBE2	0.0	nein	-
WPVAG	0.0	nein	-
WWR	0.0	nein	-
WDWG	0.0	nein	-
WDWB	0.0	nein	-
WB0	0.0	nein	-
WB1	0.0	nein	-
WCGSL	0.0	nein	-
WCGDL	0.0	nein	-
WCKAPPA	0.0	nein	-
WCF	0.0	nein	-
WCLC	0.0	nein	-
WCLE	0.0	nein	-
WALPHA0	0.0	nein	-
WALPHA1	0.0	nein	-
WBETA0	0.0	nein	-
WVFBCV	0.0	nein	-
WVFB	0.0	nein	-
WACDE	0.0	nein	-
WMOIN	0.0	nein	-
WNOFF	0.0	nein	-
WVOFFCV	0.0	nein	-
PCDSC	0.0	nein	-
PCDSCB	0.0	nein	-
PCDSCD	0.0	nein	-
PCIT	0.0	nein	-
PNFACTOR	0.0	nein	-
PXJ	0.0	nein	-
PVSAT	0.0	nein	-
PAT	0.0	nein	-
PA0	0.0	nein	-
PAGS	0.0	nein	-
PA1	0.0	nein	-
PA2	0.0	nein	-
PKETA	0.0	nein	-
PNSUB	0.0	nein	-
PNCH	0.0	nein	-
PNGATE	0.0	nein	-
PGAMMA1	-99.0	nein	-
PGAMMA2	-99.0	nein	-
PVBX	-99.0	nein	-
PVBM	0.0	nein	-
PXT	0.0	nein	-
PK1	-99.0	nein	-
PKT1	0.0	nein	-
PKT1L	0.0	nein	-
PKT2	0.0	nein	-
PK2	-99.0	nein	-
PK3	0.0	nein	-
PK3B	0.0	nein	-
PW0	0.0	nein	-
PNLX	0.0	nein	-
PDVT0	0.0	nein	-
PDVT1	0.0	nein	-
PDVT2	0.0	nein	-
PDVT0W	0.0	nein	-
PDVT1W	0.0	nein	-
PDVT2W	0.0	nein	-
PDROUT	0.0	nein	-
PDSUB	0.0	nein	-
PVTH0	0.0	nein	-
PVTHO	0.0	nein	-
PUA	0.0	nein	-
PUA1	0.0	nein	-
PUB	0.0	nein	-
PUB1	0.0	nein	-
PUC	0.0	nein	-
PUC1	0.0	nein	-
PU0	0.0	nein	-
PUTE	0.0	nein	-
PVOFF	0.0	nein	-
PELM	0.0	nein	-
PDELTA	0.0	nein	-
PRDSW	0.0	nein	-
PPRWG	0.0	nein	-
PPRWB	0.0	nein	-
PPRT	0.0	nein	-
PETA0	0.0	nein	-
PETAB	0.0	nein	-
PPCLM	0.0	nein	-
PPDIBLC1	0.0	nein	-
PPDIBLC2	0.0	nein	-
PPDIBLCB	0.0	nein	-
PPSCBE1	0.0	nein	-
PPSCBE2	0.0	nein	-
PPVAG	0.0	nein	-
PWR	0.0	nein	-
PDWG	0.0	nein	-
PDWB	0.0	nein	-
PB0	0.0	nein	-
PB1	0.0	nein	-
PCGSL	0.0	nein	-
PCGDL	0.0	nein	-
PCKAPPA	0.0	nein	-
PCF	0.0	nein	-
PCLC	0.0	nein	-
PCLE	0.0	nein	-
PALPHA0	0.0	nein	-
PALPHA1	0.0	nein	-
PBETA0	0.0	nein	-
PVFBCV	0.0	nein	-
PVFB	0.0	nein	-
PACDE	0.0	nein	-
PMOIN	0.0	nein	-
PNOFF	0.0	nein	-
PVOFFCV	0.0	nein	-
KF	0.0	nein	-
AF	1.0	nein	-
EF	1.0	nein	-
Temp	26.85	nein	simulation temperature

Bsim4V30Nmos¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	bsim4v30nMOS
Beschreibung	bsim4v30nMOS verilog device
Schematic entry	`bsim4v30nMOS`
Netlist entry	`BSIM4_`
Typ	AnalogComponent
Bitmap file	bsim4v30nMOS
Eigenschaften	278
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
GMIN	1e-12	nein	-
PS	12e-6	nein	-
PD	12e-6	nein	-
AS	12e-12	nein	-
AD	12e-12	nein	-
CGBO	-99.0	nein	-
CGDO	-99.0	nein	-
CGSO	-99.0	nein	-
L	3e-6	nein	-
W	6e-6	nein	-
MOBMOD	-99.0	nein	-
RDSMOD	-99.0	nein	-
IGCMOD	0	nein	-
IGBMOD	0	nein	-
CAPMOD	2	nein	-
RGATEMOD	2	nein	-
RBODYMOD	0	nein	-
DIOMOD	1	nein	-
TEMPMOD	-99.0	nein	-
GEOMOD	0	nein	-
RGEOMOD	0	nein	-
PERMOD	1	nein	-
TNOIMOD	0	nein	-
FNOIMOD	0	nein	-
EPSROX	3.9	nein	-
TOXE	-99.0	nein	-
TOXP	-99.0	nein	-
TOXM	-99.0	nein	-
DTOX	0.0	nein	-
XJ	1.5e-7	nein	-
GAMMA1	-99.0	nein	-
GAMMA2	-99.0	nein	-
NDEP	-99.0	nein	-
NSUB	6.0e16	nein	-
NGATE	0.0	nein	-
NSD	1.0e20	nein	-
VBX	-99.0	nein	-
XT	1.55e-7	nein	-
RSH	0.0	nein	-
RSHG	0.0	nein	-
VTH0	0.6	nein	-
VFB	-99.0	nein	-
PHIN	0.0	nein	-
K1	-99.0	nein	-
K2	-99.0	nein	-
K3	80.0	nein	-
K3B	0.0	nein	-
W0	2.5e-6	nein	-
LPE0	1.74e-7	nein	-
LPEB	0.0	nein	-
VBM	-3.0	nein	-
DVT0	2.2	nein	-
DVT1	0.53	nein	-
DVT2	-0.032	nein	-
DVTP0	0.0	nein	-
DVTP1	0.0	nein	-
DVT0W	0.0	nein	-
DVT1W	5.3e6	nein	-
DVT2W	-0.032	nein	-
U0	-99.0	nein	-
UA	-99.0	nein	-
UB	1.0e-19	nein	-
UC	-99.0	nein	-
EU	-99.0	nein	-
VSAT	8.0e4	nein	-
A0	1.0	nein	-
AGS	0.0	nein	-
B0	0.0	nein	-
B1	0.0	nein	-
KETA	-0.047	nein	-
A1	0.0	nein	-
A2	1.0	nein	-
WINT	0.0	nein	-
LINT	0.0	nein	-
DWG	0.0	nein	-
DWB	0.0	nein	-
VOFF	-0.08	nein	-
VOFFL	0.0	nein	-
MINV	0.0	nein	-
NFACTOR	1.0	nein	-
ETA0	0.08	nein	-
ETAB	-0.07	nein	-
DROUT	0.56	nein	-
DSUB	0.56	nein	-
CIT	0.0	nein	-
CDSC	2.4e-4	nein	-
CDSCB	0.0	nein	-
CDSCD	0.0	nein	-
PCLM	1.3	nein	-
PDIBL1	0.39	nein	-
PDIBL2	0.0086	nein	-
PDIBLB	0.0	nein	-
PSCBE1	4.24e8	nein	-
PSCBE2	1.0e-5	nein	-
PVAG	0.0	nein	-
DELTA	0.01	nein	-
FPROUT	0.0	nein	-
PDITS	0.0	nein	-
PDITSD	0.0	nein	-
PDITSL	0.0	nein	-
LAMBDA	-99.0	nein	-
VTL	-99.0	nein	-
LC	5.0e-9	nein	-
XN	3.0	nein	-
RDSW	200.0	nein	-
RDSWMIN	0.0	nein	-
RDW	100.0	nein	-
RDWMIN	0.0	nein	-
RSW	100.0	nein	-
RSWMIN	0.0	nein	-
PRWG	1.0	nein	-
PRWB	0.0	nein	-
WR	1.0	nein	-
NRS	-99.0	nein	-
NRD	-99.0	nein	-
ALPHA0	0.0	nein	-
ALPHA1	0.0	nein	-
BETA0	30.0	nein	-
AGIDL	0.0	nein	-
BGIDL	2.3e9	nein	-
CGIDL	0.5	nein	-
EGIDL	0.8	nein	-
AIGBACC	0.43	nein	-
BIGBACC	0.054	nein	-
CIGBACC	0.075	nein	-
NIGBACC	1.0	nein	-
AIGBINV	0.35	nein	-
BIGBINV	0.03	nein	-
CIGBINV	0.006	nein	-
EIGBINV	1.1	nein	-
NIGBINV	3.0	nein	-
AIGC	-99.0	nein	-
BIGC	-99.0	nein	-
CIGC	-99.0	nein	-
AIGSD	-99.0	nein	-
BIGSD	-99.0	nein	-
CIGSD	-99.0	nein	-
DLCIG	0.0	nein	-
NIGC	1.0	nein	-
POXEDGE	1.0	nein	-
PIGCD	1.0	nein	-
NTOX	1.0	nein	-
TOXREF	3.0e-9	nein	-
XPART	0.4	nein	-
CGS0	0.0	nein	-
CGD0	0.0	nein	-
CGB0	0.0	nein	-
CGSL	0.0	nein	-
CGDL	0.0	nein	-
CKAPPAS	0.6	nein	-
CKAPPAD	0.6	nein	-
CF	-99.0	nein	-
CLC	1.0e-7	nein	-
CLE	0.6	nein	-
DLC	0.0	nein	-
DWC	0.0	nein	-
VFBCV	-1.0	nein	-
NOFF	1.0	nein	-
VOFFCV	0.0	nein	-
ACDE	1.0	nein	-
MOIN	15.0	nein	-
XRCRG1	12.0	nein	-
XRCRG2	1.0	nein	-
RBPB	50.0	nein	-
RBPD	50.0	nein	-
RBPS	50.0	nein	-
RBDB	50.0	nein	-
RBSB	50.0	nein	-
GBMIN	1.0e-12	nein	-
DMCG	0.0	nein	-
DMCI	0.0	nein	-
DMDG	0.0	nein	-
DMCGT	0.0	nein	-
NF	1.0	nein	-
DWJ	0.0	nein	-
MIN	0.0	nein	-
XGW	0.0	nein	-
XGL	0.0	nein	-
XL	0.0	nein	-
XW	0.0	nein	-
NGCON	1.0	nein	-
IJTHSREV	0.1	nein	-
IJTHDREV	0.1	nein	-
IJTHSFWD	0.1	nein	-
IJTHDFWD	0.1	nein	-
XJBVS	1.0	nein	-
XJBVD	1.0	nein	-
BVS	10.0	nein	-
BVD	10.0	nein	-
JSS	1.0e-4	nein	-
JSD	1.0e-4	nein	-
JSWS	0.0	nein	-
JSWD	0.0	nein	-
JSWGS	0.0	nein	-
JSWGD	0.0	nein	-
CJS	5.0e-4	nein	-
CJD	5.0e-4	nein	-
MJS	0.5	nein	-
MJD	0.5	nein	-
MJSWS	0.33	nein	-
MJSWD	0.33	nein	-
CJSWS	5.0e-10	nein	-
CJSWD	5.0e-10	nein	-
CJSWGS	5.0e-10	nein	-
CJSWGD	5.0e-10	nein	-
MJSWGS	0.33	nein	-
MJSWGD	0.33	nein	-
PBS	1.0	nein	-
PBD	1.0	nein	-
PBSWS	1.0	nein	-
PBSWD	1.0	nein	-
PBSWGS	1.0	nein	-
PBSWGD	1.0	nein	-
TNOM	27	nein	-
UTE	-1.5	nein	-
KT1	-0.11	nein	-
KT1L	0.0	nein	-
KT2	0.022	nein	-
UA1	1.0e-9	nein	-
UB1	-1.0e-18	nein	-
UC1	-99.0	nein	-
AT	3.3e4	nein	-
PRT	0.0	nein	-
NJS	1.0	nein	-
NJD	1.0	nein	-
XTIS	3.0	nein	-
XTID	3.0	nein	-
TPB	0.0	nein	-
TPBSW	0.0	nein	-
TPBSWG	0.0	nein	-
TCJ	0.0	nein	-
TCJSW	0.0	nein	-
TCJSWG	0.0	nein	-
SA	0.0	nein	-
SB	0.0	nein	-
SD	0.0	nein	-
SAREF	1e-6	nein	-
SBREF	1e-6	nein	-
WLOD	0.0	nein	-
KU0	0.0	nein	-
KVSAT	0.0	nein	-
TKU0	0.0	nein	-
LKU0	0.0	nein	-
WKU0	0.0	nein	-
PKU0	0.0	nein	-
LLODKU0	0.0	nein	-
WLODKU0	0.0	nein	-
KVTH0	0.0	nein	-
LKVTH0	0.0	nein	-
WKVTH0	0.0	nein	-
PKVTH0	0.0	nein	-
LLODVTH	0.0	nein	-
WLODVTH	0.0	nein	-
STK2	0.0	nein	-
LODK2	1.0	nein	-
STETA0	0.0	nein	-
LODETA0	1.0	nein	-
WL	0.0	nein	-
WLN	1.0	nein	-
WW	0.0	nein	-
WWN	1.0	nein	-
WWL	0.0	nein	-
LL	0.0	nein	-
LLN	1.0	nein	-
LW	0.0	nein	-
LWN	1.0	nein	-
LWL	0.0	nein	-
LLC	0.0	nein	-
LWC	0.0	nein	-
LWLC	0.0	nein	-
WLC	0.0	nein	-
WWC	0.0	nein	-
WWLC	0.0	nein	-
NTNOI	1.0	nein	-
KF	0.0	nein	-
AF	1.0	nein	-
EF	1.0	nein	-
TEMP	27	nein	-

Bsim4V30Pmos¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	bsim4v30pMOS
Beschreibung	bsim4v30pMOS verilog device
Schematic entry	`bsim4v30pMOS`
Netlist entry	`BSIM4_`
Typ	AnalogComponent
Bitmap file	bsim4v30pMOS
Eigenschaften	278
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
GMIN	1e-12	nein	-
PS	12e-6	nein	-
PD	12e-6	nein	-
AS	12e-12	nein	-
AD	12e-12	nein	-
CGBO	-99.0	nein	-
CGDO	-99.0	nein	-
CGSO	-99.0	nein	-
L	3e-6	nein	-
W	6e-6	nein	-
MOBMOD	-99.0	nein	-
RDSMOD	-99.0	nein	-
IGCMOD	0	nein	-
IGBMOD	0	nein	-
CAPMOD	2	nein	-
RGATEMOD	2	nein	-
RBODYMOD	0	nein	-
DIOMOD	1	nein	-
TEMPMOD	-99.0	nein	-
GEOMOD	0	nein	-
RGEOMOD	0	nein	-
PERMOD	1	nein	-
TNOIMOD	0	nein	-
FNOIMOD	0	nein	-
EPSROX	3.9	nein	-
TOXE	-99.0	nein	-
TOXP	-99.0	nein	-
TOXM	-99.0	nein	-
DTOX	0.0	nein	-
XJ	1.5e-7	nein	-
GAMMA1	-99.0	nein	-
GAMMA2	-99.0	nein	-
NDEP	-99.0	nein	-
NSUB	6.0e16	nein	-
NGATE	0.0	nein	-
NSD	1.0e20	nein	-
VBX	-99.0	nein	-
XT	1.55e-7	nein	-
RSH	0.0	nein	-
RSHG	0.0	nein	-
VTH0	-0.6	nein	-
VFB	-99.0	nein	-
PHIN	0.0	nein	-
K1	-99.0	nein	-
K2	-99.0	nein	-
K3	80.0	nein	-
K3B	0.0	nein	-
W0	2.5e-6	nein	-
LPE0	1.74e-7	nein	-
LPEB	0.0	nein	-
VBM	-3.0	nein	-
DVT0	2.2	nein	-
DVT1	0.53	nein	-
DVT2	-0.032	nein	-
DVTP0	0.0	nein	-
DVTP1	0.0	nein	-
DVT0W	0.0	nein	-
DVT1W	5.3e6	nein	-
DVT2W	-0.032	nein	-
U0	-99.0	nein	-
UA	-99.0	nein	-
UB	1.0e-19	nein	-
UC	-99.0	nein	-
EU	-99.0	nein	-
VSAT	8.0e4	nein	-
A0	1.0	nein	-
AGS	0.0	nein	-
B0	0.0	nein	-
B1	0.0	nein	-
KETA	-0.047	nein	-
A1	0.0	nein	-
A2	1.0	nein	-
WINT	0.0	nein	-
LINT	0.0	nein	-
DWG	0.0	nein	-
DWB	0.0	nein	-
VOFF	-0.08	nein	-
VOFFL	0.0	nein	-
MINV	0.0	nein	-
NFACTOR	1.0	nein	-
ETA0	0.08	nein	-
ETAB	-0.07	nein	-
DROUT	0.56	nein	-
DSUB	0.56	nein	-
CIT	0.0	nein	-
CDSC	2.4e-4	nein	-
CDSCB	0.0	nein	-
CDSCD	0.0	nein	-
PCLM	1.3	nein	-
PDIBL1	0.39	nein	-
PDIBL2	0.0086	nein	-
PDIBLB	0.0	nein	-
PSCBE1	4.24e8	nein	-
PSCBE2	1.0e-5	nein	-
PVAG	0.0	nein	-
DELTA	0.01	nein	-
FPROUT	0.0	nein	-
PDITS	0.0	nein	-
PDITSD	0.0	nein	-
PDITSL	0.0	nein	-
LAMBDA	-99.0	nein	-
VTL	-99.0	nein	-
LC	5.0e-9	nein	-
XN	3.0	nein	-
RDSW	200.0	nein	-
RDSWMIN	0.0	nein	-
RDW	100.0	nein	-
RDWMIN	0.0	nein	-
RSW	100.0	nein	-
RSWMIN	0.0	nein	-
PRWG	1.0	nein	-
PRWB	0.0	nein	-
WR	1.0	nein	-
NRS	-99.0	nein	-
NRD	-99.0	nein	-
ALPHA0	0.0	nein	-
ALPHA1	0.0	nein	-
BETA0	30.0	nein	-
AGIDL	0.0	nein	-
BGIDL	2.3e9	nein	-
CGIDL	0.5	nein	-
EGIDL	0.8	nein	-
AIGBACC	0.43	nein	-
BIGBACC	0.054	nein	-
CIGBACC	0.075	nein	-
NIGBACC	1.0	nein	-
AIGBINV	0.35	nein	-
BIGBINV	0.03	nein	-
CIGBINV	0.006	nein	-
EIGBINV	1.1	nein	-
NIGBINV	3.0	nein	-
AIGC	-99.0	nein	-
BIGC	-99.0	nein	-
CIGC	-99.0	nein	-
AIGSD	-99.0	nein	-
BIGSD	-99.0	nein	-
CIGSD	-99.0	nein	-
DLCIG	0.0	nein	-
NIGC	1.0	nein	-
POXEDGE	1.0	nein	-
PIGCD	1.0	nein	-
NTOX	1.0	nein	-
TOXREF	3.0e-9	nein	-
XPART	0.4	nein	-
CGS0	0.0	nein	-
CGD0	0.0	nein	-
CGB0	0.0	nein	-
CGSL	0.0	nein	-
CGDL	0.0	nein	-
CKAPPAS	0.6	nein	-
CKAPPAD	0.6	nein	-
CF	-99.0	nein	-
CLC	1.0e-7	nein	-
CLE	0.6	nein	-
DLC	0.0	nein	-
DWC	0.0	nein	-
VFBCV	-1.0	nein	-
NOFF	1.0	nein	-
VOFFCV	0.0	nein	-
ACDE	1.0	nein	-
MOIN	15.0	nein	-
XRCRG1	12.0	nein	-
XRCRG2	1.0	nein	-
RBPB	50.0	nein	-
RBPD	50.0	nein	-
RBPS	50.0	nein	-
RBDB	50.0	nein	-
RBSB	50.0	nein	-
GBMIN	1.0e-12	nein	-
DMCG	0.0	nein	-
DMCI	0.0	nein	-
DMDG	0.0	nein	-
DMCGT	0.0	nein	-
NF	1.0	nein	-
DWJ	0.0	nein	-
MIN	0.0	nein	-
XGW	0.0	nein	-
XGL	0.0	nein	-
XL	0.0	nein	-
XW	0.0	nein	-
NGCON	1.0	nein	-
IJTHSREV	0.1	nein	-
IJTHDREV	0.1	nein	-
IJTHSFWD	0.1	nein	-
IJTHDFWD	0.1	nein	-
XJBVS	1.0	nein	-
XJBVD	1.0	nein	-
BVS	10.0	nein	-
BVD	10.0	nein	-
JSS	1.0e-4	nein	-
JSD	1.0e-4	nein	-
JSWS	0.0	nein	-
JSWD	0.0	nein	-
JSWGS	0.0	nein	-
JSWGD	0.0	nein	-
CJS	5.0e-4	nein	-
CJD	5.0e-4	nein	-
MJS	0.5	nein	-
MJD	0.5	nein	-
MJSWS	0.33	nein	-
MJSWD	0.33	nein	-
CJSWS	5.0e-10	nein	-
CJSWD	5.0e-10	nein	-
CJSWGS	5.0e-10	nein	-
CJSWGD	5.0e-10	nein	-
MJSWGS	0.33	nein	-
MJSWGD	0.33	nein	-
PBS	1.0	nein	-
PBD	1.0	nein	-
PBSWS	1.0	nein	-
PBSWD	1.0	nein	-
PBSWGS	1.0	nein	-
PBSWGD	1.0	nein	-
TNOM	27	nein	-
UTE	-1.5	nein	-
KT1	-0.11	nein	-
KT1L	0.0	nein	-
KT2	0.022	nein	-
UA1	1.0e-9	nein	-
UB1	-1.0e-18	nein	-
UC1	-99.0	nein	-
AT	3.3e4	nein	-
PRT	0.0	nein	-
NJS	1.0	nein	-
NJD	1.0	nein	-
XTIS	3.0	nein	-
XTID	3.0	nein	-
TPB	0.0	nein	-
TPBSW	0.0	nein	-
TPBSWG	0.0	nein	-
TCJ	0.0	nein	-
TCJSW	0.0	nein	-
TCJSWG	0.0	nein	-
SA	0.0	nein	-
SB	0.0	nein	-
SD	0.0	nein	-
SAREF	1e-6	nein	-
SBREF	1e-6	nein	-
WLOD	0.0	nein	-
KU0	0.0	nein	-
KVSAT	0.0	nein	-
TKU0	0.0	nein	-
LKU0	0.0	nein	-
WKU0	0.0	nein	-
PKU0	0.0	nein	-
LLODKU0	0.0	nein	-
WLODKU0	0.0	nein	-
KVTH0	0.0	nein	-
LKVTH0	0.0	nein	-
WKVTH0	0.0	nein	-
PKVTH0	0.0	nein	-
LLODVTH	0.0	nein	-
WLODVTH	0.0	nein	-
STK2	0.0	nein	-
LODK2	1.0	nein	-
STETA0	0.0	nein	-
LODETA0	1.0	nein	-
WL	0.0	nein	-
WLN	1.0	nein	-
WW	0.0	nein	-
WWN	1.0	nein	-
WWL	0.0	nein	-
LL	0.0	nein	-
LLN	1.0	nein	-
LW	0.0	nein	-
LWN	1.0	nein	-
LWL	0.0	nein	-
LLC	0.0	nein	-
LWC	0.0	nein	-
LWLC	0.0	nein	-
WLC	0.0	nein	-
WWC	0.0	nein	-
WWLC	0.0	nein	-
NTNOI	1.0	nein	-
KF	0.0	nein	-
AF	1.0	nein	-
EF	1.0	nein	-
TEMP	27	nein	-

Npn Hicum L0 V1.2¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	npn HICUM L0 v1.2
Beschreibung	HICUM Level 0 v1.2 verilog device
Schematic entry	`hicumL0V1p2`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	npnsub_therm
Eigenschaften	94
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Typ	npn	ja	polarity [npn, pnp]
is	1.0e-16	nein	(Modified) saturation current (A)
mcf	1.00	nein	Non-ideality coefficient of forward collector current
mcr	1.00	nein	Non-ideality coefficient of reverse collector current
vef	1.0e6	nein	forward Early voltage (normalization volt.) (V)
ver	1.0e6	nein	reverse Early voltage (normalization volt.) (V)
iqf	1.0e6	nein	forward d.c. high-injection roll-off current (A)
fiqf	0	nein	flag for turning on base related critical current
iqr	1.0e6	nein	inverse d.c. high-injection roll-off current (A)
iqfh	1.0e6	nein	high-injection correction current (A)
tfh	0.0	nein	high-injection correction factor
ahq	0	nein	Smoothing factor for the d.c. injection width
ibes	1e-18	nein	BE saturation current (A)
mbe	1.0	nein	BE non-ideality factor
ires	0.0	nein	BE recombination saturation current (A)
mre	2.0	nein	BE recombination non-ideality factor
ibcs	0.0	nein	BC saturation current (A)
mbc	1.0	nein	BC non-ideality factor
cje0	1.0e-20	nein	Zero-bias BE depletion capacitance (F)
vde	0.9	nein	BE built-in voltage (V)
ze	0.5	nein	BE exponent factor
aje	2.5	nein	Ratio of maximum to zero-bias value
vdedc	0.9	nein	BE charge built-in voltage for d.c. transfer current (V)
zedc	0.5	nein	charge BE exponent factor for d.c. transfer current
ajedc	2.5	nein	BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current
t0	0.0	nein	low current transit time at Vbici=0 (s)
dt0h	0.0	nein	Base width modulation contribution (s)
tbvl	0.0	nein	SCR width modulation contribution (s)
tef0	0.0	nein	Storage time in neutral emitter (s)
gte	1.0	nein	Exponent factor for emitter transit time
thcs	0.0	nein	Saturation time at high current densities (s)
ahc	0.1	nein	Smoothing factor for current dependence
tr	0.0	nein	Storage time at inverse operation (s)
rci0	150	nein	Low-field collector resistance under emitter (Ohm)
vlim	0.5	nein	Voltage dividing ohmic and satur.region (V)
vpt	100	nein	Punch-through voltage (V)
vces	0.1	nein	Saturation voltage (V)
cjci0	1.0e-20	nein	Total zero-bias BC depletion capacitance (F)
vdci	0.7	nein	BC built-in voltage (V)
zci	0.333	nein	BC exponent factor
vptci	100	nein	Punch-through voltage of BC junction (V)
cjcx0	1.0e-20	nein	Zero-bias external BC depletion capacitance (F)
vdcx	0.7	nein	External BC built-in voltage (V)
zcx	0.333	nein	External BC exponent factor
vptcx	100	nein	Punch-through voltage (V)
fbc	1.0	nein	Split factor = Cjci0/Cjc0
rbi0	0.0	nein	Internal base resistance at zero-bias (Ohm)
vr0e	2.5	nein	forward Early voltage (normalization volt.) (V)
vr0c	1.0e6	nein	forward Early voltage (normalization volt.) (V)
fgeo	0.656	nein	Geometry factor
rbx	0.0	nein	External base series resistance (Ohm)
rcx	0.0	nein	Emitter series resistance (Ohm)
re	0.0	nein	External collector series resistance (Ohm)
itss	0.0	nein	Substrate transistor transfer saturation current (A)
msf	1.0	nein	Substrate transistor transfer current non-ideality factor
iscs	0.0	nein	SC saturation current (A)
msc	1.0	nein	SC non-ideality factor
cjs0	1.0e-20	nein	Zero-bias SC depletion capacitance (F)
vds	0.3	nein	SC built-in voltage (V)
zs	0.3	nein	External SC exponent factor
vpts	100	nein	SC punch-through voltage (V)
cbcpar	0.0	nein	Collector-base isolation (overlap) capacitance (F)
cbepar	0.0	nein	Emitter-base oxide capacitance (F)
eavl	0.0	nein	Exponent factor
kavl	0.0	nein	Prefactor
kf	0.0	nein	flicker noise coefficient (M^(1-AF))
af	2.0	nein	flicker noise exponent factor
vgb	1.2	nein	Bandgap-voltage (V)
vge	1.17	nein	Effective emitter bandgap-voltage (V)
vgc	1.17	nein	Effective collector bandgap-voltage (V)
vgs	1.17	nein	Effective substrate bandgap-voltage (V)
f1vg	-1.02377e-4	nein	Coefficient K1 in T-dependent bandgap equation (V/K)
f2vg	4.3215e-4	nein	Coefficient K2 in T-dependent bandgap equation (V/K)
alt0	0.0	nein	Frist-order TC of tf0 (1/K)
kt0	0.0	nein	Second-order TC of tf0 (1/K^2)
zetact	3.0	nein	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	nein	Exponent coefficient in BE junction current temperature dependence
zetaci	0.0	nein	TC of epi-collector diffusivity
alvs	0.0	nein	Relative TC of satur.drift velocity (1/K)
alces	0.0	nein	Relative TC of vces (1/K)
zetarbi	0.0	nein	TC of internal base resistance
zetarbx	0.0	nein	TC of external base resistance
zetarcx	0.0	nein	TC of external collector resistance
zetare	0.0	nein	TC of emitter resistances
zetaiqf	0.0	nein	TC of iqf
alkav	0.0	nein	TC of avalanche prefactor (1/K)
aleav	0.0	nein	TC of avalanche exponential factor (1/K)
zetarth	0.0	nein	Exponent factor for temperature dependent thermal resistance
flsh	0	nein	Flag for self-heating calculation
rth	0.0	nein	Thermal resistance (K/W)
cth	0.0	nein	Thermal capacitance (Ws/K)
tnom	27	nein	Temperature for which parameters are valid (C)
dt	0.0	nein	Temperature change for particular transistor (K)
Temp	27	nein	simulation temperature

Pnp Hicum L0 V1.2¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	pnp HICUM L0 v1.2
Beschreibung	HICUM Level 0 v1.2 verilog device
Schematic entry	`hicumL0V1p2`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	pnpsub_therm
Eigenschaften	94
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Typ	pnp	ja	polarity [npn, pnp]
is	1.0e-16	nein	(Modified) saturation current (A)
mcf	1.00	nein	Non-ideality coefficient of forward collector current
mcr	1.00	nein	Non-ideality coefficient of reverse collector current
vef	1.0e6	nein	forward Early voltage (normalization volt.) (V)
ver	1.0e6	nein	reverse Early voltage (normalization volt.) (V)
iqf	1.0e6	nein	forward d.c. high-injection roll-off current (A)
fiqf	0	nein	flag for turning on base related critical current
iqr	1.0e6	nein	inverse d.c. high-injection roll-off current (A)
iqfh	1.0e6	nein	high-injection correction current (A)
tfh	0.0	nein	high-injection correction factor
ahq	0	nein	Smoothing factor for the d.c. injection width
ibes	1e-18	nein	BE saturation current (A)
mbe	1.0	nein	BE non-ideality factor
ires	0.0	nein	BE recombination saturation current (A)
mre	2.0	nein	BE recombination non-ideality factor
ibcs	0.0	nein	BC saturation current (A)
mbc	1.0	nein	BC non-ideality factor
cje0	1.0e-20	nein	Zero-bias BE depletion capacitance (F)
vde	0.9	nein	BE built-in voltage (V)
ze	0.5	nein	BE exponent factor
aje	2.5	nein	Ratio of maximum to zero-bias value
vdedc	0.9	nein	BE charge built-in voltage for d.c. transfer current (V)
zedc	0.5	nein	charge BE exponent factor for d.c. transfer current
ajedc	2.5	nein	BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current
t0	0.0	nein	low current transit time at Vbici=0 (s)
dt0h	0.0	nein	Base width modulation contribution (s)
tbvl	0.0	nein	SCR width modulation contribution (s)
tef0	0.0	nein	Storage time in neutral emitter (s)
gte	1.0	nein	Exponent factor for emitter transit time
thcs	0.0	nein	Saturation time at high current densities (s)
ahc	0.1	nein	Smoothing factor for current dependence
tr	0.0	nein	Storage time at inverse operation (s)
rci0	150	nein	Low-field collector resistance under emitter (Ohm)
vlim	0.5	nein	Voltage dividing ohmic and satur.region (V)
vpt	100	nein	Punch-through voltage (V)
vces	0.1	nein	Saturation voltage (V)
cjci0	1.0e-20	nein	Total zero-bias BC depletion capacitance (F)
vdci	0.7	nein	BC built-in voltage (V)
zci	0.333	nein	BC exponent factor
vptci	100	nein	Punch-through voltage of BC junction (V)
cjcx0	1.0e-20	nein	Zero-bias external BC depletion capacitance (F)
vdcx	0.7	nein	External BC built-in voltage (V)
zcx	0.333	nein	External BC exponent factor
vptcx	100	nein	Punch-through voltage (V)
fbc	1.0	nein	Split factor = Cjci0/Cjc0
rbi0	0.0	nein	Internal base resistance at zero-bias (Ohm)
vr0e	2.5	nein	forward Early voltage (normalization volt.) (V)
vr0c	1.0e6	nein	forward Early voltage (normalization volt.) (V)
fgeo	0.656	nein	Geometry factor
rbx	0.0	nein	External base series resistance (Ohm)
rcx	0.0	nein	Emitter series resistance (Ohm)
re	0.0	nein	External collector series resistance (Ohm)
itss	0.0	nein	Substrate transistor transfer saturation current (A)
msf	1.0	nein	Substrate transistor transfer current non-ideality factor
iscs	0.0	nein	SC saturation current (A)
msc	1.0	nein	SC non-ideality factor
cjs0	1.0e-20	nein	Zero-bias SC depletion capacitance (F)
vds	0.3	nein	SC built-in voltage (V)
zs	0.3	nein	External SC exponent factor
vpts	100	nein	SC punch-through voltage (V)
cbcpar	0.0	nein	Collector-base isolation (overlap) capacitance (F)
cbepar	0.0	nein	Emitter-base oxide capacitance (F)
eavl	0.0	nein	Exponent factor
kavl	0.0	nein	Prefactor
kf	0.0	nein	flicker noise coefficient (M^(1-AF))
af	2.0	nein	flicker noise exponent factor
vgb	1.2	nein	Bandgap-voltage (V)
vge	1.17	nein	Effective emitter bandgap-voltage (V)
vgc	1.17	nein	Effective collector bandgap-voltage (V)
vgs	1.17	nein	Effective substrate bandgap-voltage (V)
f1vg	-1.02377e-4	nein	Coefficient K1 in T-dependent bandgap equation (V/K)
f2vg	4.3215e-4	nein	Coefficient K2 in T-dependent bandgap equation (V/K)
alt0	0.0	nein	Frist-order TC of tf0 (1/K)
kt0	0.0	nein	Second-order TC of tf0 (1/K^2)
zetact	3.0	nein	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	nein	Exponent coefficient in BE junction current temperature dependence
zetaci	0.0	nein	TC of epi-collector diffusivity
alvs	0.0	nein	Relative TC of satur.drift velocity (1/K)
alces	0.0	nein	Relative TC of vces (1/K)
zetarbi	0.0	nein	TC of internal base resistance
zetarbx	0.0	nein	TC of external base resistance
zetarcx	0.0	nein	TC of external collector resistance
zetare	0.0	nein	TC of emitter resistances
zetaiqf	0.0	nein	TC of iqf
alkav	0.0	nein	TC of avalanche prefactor (1/K)
aleav	0.0	nein	TC of avalanche exponential factor (1/K)
zetarth	0.0	nein	Exponent factor for temperature dependent thermal resistance
flsh	0	nein	Flag for self-heating calculation
rth	0.0	nein	Thermal resistance (K/W)
cth	0.0	nein	Thermal capacitance (Ws/K)
tnom	27	nein	Temperature for which parameters are valid (C)
dt	0.0	nein	Temperature change for particular transistor (K)
Temp	27	nein	simulation temperature

Npn Hicum L0 V1.2G¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	npn HICUM L0 v1.2g
Beschreibung	HICUM Level 0 v1.2g verilog device
Schematic entry	`hicumL0V1p2g`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	npnsub_therm
Eigenschaften	99
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Typ	npn	ja	polarity [npn, pnp]
is	1.0e-16	nein	(Modified) saturation current (A)
mcf	1.00	nein	Non-ideality coefficient of forward collector current
mcr	1.00	nein	Non-ideality coefficient of reverse collector current
vef	1.0e6	nein	forward Early voltage (normalization volt.) (V)
ver	1.0e6	nein	reverse Early voltage (normalization volt.) (V)
iqf	1.0e6	nein	forward d.c. high-injection roll-off current (A)
fiqf	0	nein	flag for turning on base related critical current
iqr	1.0e6	nein	inverse d.c. high-injection roll-off current (A)
iqfh	1.0e6	nein	high-injection correction current (A)
iqfe	0.0	nein	high-injection roll-off current
ahq	0.0	nein	Smoothing factor for the d.c. injection width
ibes	1e-18	nein	BE saturation current (A)
mbe	1.0	nein	BE non-ideality factor
ires	0.0	nein	BE recombination saturation current (A)
mre	2.0	nein	BE recombination non-ideality factor
ibcs	0.0	nein	BC saturation current (A)
mbc	1.0	nein	BC non-ideality factor
cje0	1.0e-20	nein	Zero-bias BE depletion capacitance (F)
vde	0.9	nein	BE built-in voltage (V)
ze	0.5	nein	BE exponent factor
aje	2.5	nein	Ratio of maximum to zero-bias value
vdedc	0.9	nein	BE charge built-in voltage for d.c. transfer current (V)
zedc	0.5	nein	charge BE exponent factor for d.c. transfer current
ajedc	2.5	nein	BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current
t0	0.0	nein	low current transit time at Vbici=0 (s)
dt0h	0.0	nein	Base width modulation contribution (s)
tbvl	0.0	nein	SCR width modulation contribution (s)
tef0	0.0	nein	Storage time in neutral emitter (s)
gte	1.0	nein	Exponent factor for emitter transit time
thcs	0.0	nein	Saturation time at high current densities (s)
ahc	0.1	nein	Smoothing factor for current dependence
tr	0.0	nein	Storage time at inverse operation (s)
rci0	150	nein	Low-field collector resistance under emitter (Ohm)
vlim	0.5	nein	Voltage dividing ohmic and satur.region (V)
vpt	100.0	nein	Punch-through voltage (V)
vces	0.1	nein	Saturation voltage (V)
cjci0	1.0e-20	nein	Total zero-bias BC depletion capacitance (F)
vdci	0.7	nein	BC built-in voltage (V)
zci	0.333	nein	BC exponent factor
vptci	100.0	nein	Punch-through voltage of BC junction (V)
cjcx0	1.0e-20	nein	Zero-bias external BC depletion capacitance (F)
vdcx	0.7	nein	External BC built-in voltage (V)
zcx	0.333	nein	External BC exponent factor
vptcx	100.0	nein	Punch-through voltage (V)
fbc	1.0	nein	Split factor = Cjci0/Cjc0
rbi0	0.0	nein	Internal base resistance at zero-bias (Ohm)
vr0e	2.5	nein	forward Early voltage (normalization volt.) (V)
vr0c	1.0e6	nein	forward Early voltage (normalization volt.) (V)
fgeo	0.656	nein	Geometry factor
rbx	0.0	nein	External base series resistance (Ohm)
rcx	0.0	nein	Emitter series resistance (Ohm)
re	0.0	nein	External collector series resistance (Ohm)
itss	0.0	nein	Substrate transistor transfer saturation current (A)
msf	1.0	nein	Substrate transistor transfer current non-ideality factor
iscs	0.0	nein	SC saturation current (A)
msc	1.0	nein	SC non-ideality factor
cjs0	1.0e-20	nein	Zero-bias SC depletion capacitance (F)
vds	0.3	nein	SC built-in voltage (V)
zs	0.3	nein	External SC exponent factor
vpts	100.0	nein	SC punch-through voltage (V)
cbcpar	0.0	nein	Collector-base isolation (overlap) capacitance (F)
cbepar	0.0	nein	Emitter-base oxide capacitance (F)
eavl	0.0	nein	Exponent factor
kavl	0.0	nein	Prefactor
kf	0.0	nein	flicker noise coefficient (M^(1-AF))
af	2.0	nein	flicker noise exponent factor
vgb	1.2	nein	Bandgap-voltage (V)
vge	1.17	nein	Effective emitter bandgap-voltage (V)
vgc	1.17	nein	Effective collector bandgap-voltage (V)
vgs	1.17	nein	Effective substrate bandgap-voltage (V)
f1vg	-1.02377e-4	nein	Coefficient K1 in T-dependent bandgap equation (V/K)
f2vg	4.3215e-4	nein	Coefficient K2 in T-dependent bandgap equation (V/K)
alt0	0.0	nein	Frist-order TC of tf0 (1/K)
kt0	0.0	nein	Second-order TC of tf0 (1/K^2)
zetact	3.0	nein	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	nein	Exponent coefficient in BE junction current temperature dependence
zetaci	0.0	nein	TC of epi-collector diffusivity
alvs	0.0	nein	Relative TC of satur.drift velocity (1/K)
alces	0.0	nein	Relative TC of vces (1/K)
zetarbi	0.0	nein	TC of internal base resistance
zetarbx	0.0	nein	TC of external base resistance
zetarcx	0.0	nein	TC of external collector resistance
zetare	0.0	nein	TC of emitter resistances
zetaiqf	0.0	nein	TC of iqf (bandgap coefficient of zero bias hole charge)
alkav	0.0	nein	TC of avalanche prefactor, identical to alfav of Hicum/L2 (1/K)
aleav	0.0	nein	TC of avalanche exponential factor, identical to alqav of Hicum/L2 (1/K)
flsh	0	nein	Flag for self-heating calculation
rth	0.0	nein	Thermal resistance (K/W)
zetarth	0.0	nein	Exponent factor for temperature dependent thermal resistance
cth	0.0	nein	Thermal capacitance (Ws/K)
tnom	27	nein	Temperature for which parameters are valid (C)
dt	0.0	nein	Temperature change for particular transistor (K)
delte	0.0	nein	Emitter part coefficient of the zero bias hole charge temperature variation
deltc	0.0	nein	Collector part coefficient of the zero bias hole charge temperature variation
zetaver	0.0	nein	Bandgap TC parameter of ver
zetavef	0.0	nein	Bandgap TC parameter of vef
ibhrec	0.0	nein	Specific recombination current at the BC barrier for high forward injection (A)
Temp	27	nein	simulation temperature

Pnp Hicum L0 V1.2G¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	pnp HICUM L0 v1.2g
Beschreibung	HICUM Level 0 v1.2g verilog device
Schematic entry	`hicumL0V1p2g`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	pnpsub_therm
Eigenschaften	99
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Typ	pnp	ja	polarity [npn, pnp]
is	1.0e-16	nein	(Modified) saturation current (A)
mcf	1.00	nein	Non-ideality coefficient of forward collector current
mcr	1.00	nein	Non-ideality coefficient of reverse collector current
vef	1.0e6	nein	forward Early voltage (normalization volt.) (V)
ver	1.0e6	nein	reverse Early voltage (normalization volt.) (V)
iqf	1.0e6	nein	forward d.c. high-injection roll-off current (A)
fiqf	0	nein	flag for turning on base related critical current
iqr	1.0e6	nein	inverse d.c. high-injection roll-off current (A)
iqfh	1.0e6	nein	high-injection correction current (A)
iqfe	0.0	nein	high-injection roll-off current
ahq	0.0	nein	Smoothing factor for the d.c. injection width
ibes	1e-18	nein	BE saturation current (A)
mbe	1.0	nein	BE non-ideality factor
ires	0.0	nein	BE recombination saturation current (A)
mre	2.0	nein	BE recombination non-ideality factor
ibcs	0.0	nein	BC saturation current (A)
mbc	1.0	nein	BC non-ideality factor
cje0	1.0e-20	nein	Zero-bias BE depletion capacitance (F)
vde	0.9	nein	BE built-in voltage (V)
ze	0.5	nein	BE exponent factor
aje	2.5	nein	Ratio of maximum to zero-bias value
vdedc	0.9	nein	BE charge built-in voltage for d.c. transfer current (V)
zedc	0.5	nein	charge BE exponent factor for d.c. transfer current
ajedc	2.5	nein	BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current
t0	0.0	nein	low current transit time at Vbici=0 (s)
dt0h	0.0	nein	Base width modulation contribution (s)
tbvl	0.0	nein	SCR width modulation contribution (s)
tef0	0.0	nein	Storage time in neutral emitter (s)
gte	1.0	nein	Exponent factor for emitter transit time
thcs	0.0	nein	Saturation time at high current densities (s)
ahc	0.1	nein	Smoothing factor for current dependence
tr	0.0	nein	Storage time at inverse operation (s)
rci0	150	nein	Low-field collector resistance under emitter (Ohm)
vlim	0.5	nein	Voltage dividing ohmic and satur.region (V)
vpt	100.0	nein	Punch-through voltage (V)
vces	0.1	nein	Saturation voltage (V)
cjci0	1.0e-20	nein	Total zero-bias BC depletion capacitance (F)
vdci	0.7	nein	BC built-in voltage (V)
zci	0.333	nein	BC exponent factor
vptci	100.0	nein	Punch-through voltage of BC junction (V)
cjcx0	1.0e-20	nein	Zero-bias external BC depletion capacitance (F)
vdcx	0.7	nein	External BC built-in voltage (V)
zcx	0.333	nein	External BC exponent factor
vptcx	100.0	nein	Punch-through voltage (V)
fbc	1.0	nein	Split factor = Cjci0/Cjc0
rbi0	0.0	nein	Internal base resistance at zero-bias (Ohm)
vr0e	2.5	nein	forward Early voltage (normalization volt.) (V)
vr0c	1.0e6	nein	forward Early voltage (normalization volt.) (V)
fgeo	0.656	nein	Geometry factor
rbx	0.0	nein	External base series resistance (Ohm)
rcx	0.0	nein	Emitter series resistance (Ohm)
re	0.0	nein	External collector series resistance (Ohm)
itss	0.0	nein	Substrate transistor transfer saturation current (A)
msf	1.0	nein	Substrate transistor transfer current non-ideality factor
iscs	0.0	nein	SC saturation current (A)
msc	1.0	nein	SC non-ideality factor
cjs0	1.0e-20	nein	Zero-bias SC depletion capacitance (F)
vds	0.3	nein	SC built-in voltage (V)
zs	0.3	nein	External SC exponent factor
vpts	100.0	nein	SC punch-through voltage (V)
cbcpar	0.0	nein	Collector-base isolation (overlap) capacitance (F)
cbepar	0.0	nein	Emitter-base oxide capacitance (F)
eavl	0.0	nein	Exponent factor
kavl	0.0	nein	Prefactor
kf	0.0	nein	flicker noise coefficient (M^(1-AF))
af	2.0	nein	flicker noise exponent factor
vgb	1.2	nein	Bandgap-voltage (V)
vge	1.17	nein	Effective emitter bandgap-voltage (V)
vgc	1.17	nein	Effective collector bandgap-voltage (V)
vgs	1.17	nein	Effective substrate bandgap-voltage (V)
f1vg	-1.02377e-4	nein	Coefficient K1 in T-dependent bandgap equation (V/K)
f2vg	4.3215e-4	nein	Coefficient K2 in T-dependent bandgap equation (V/K)
alt0	0.0	nein	Frist-order TC of tf0 (1/K)
kt0	0.0	nein	Second-order TC of tf0 (1/K^2)
zetact	3.0	nein	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	nein	Exponent coefficient in BE junction current temperature dependence
zetaci	0.0	nein	TC of epi-collector diffusivity
alvs	0.0	nein	Relative TC of satur.drift velocity (1/K)
alces	0.0	nein	Relative TC of vces (1/K)
zetarbi	0.0	nein	TC of internal base resistance
zetarbx	0.0	nein	TC of external base resistance
zetarcx	0.0	nein	TC of external collector resistance
zetare	0.0	nein	TC of emitter resistances
zetaiqf	0.0	nein	TC of iqf (bandgap coefficient of zero bias hole charge)
alkav	0.0	nein	TC of avalanche prefactor, identical to alfav of Hicum/L2 (1/K)
aleav	0.0	nein	TC of avalanche exponential factor, identical to alqav of Hicum/L2 (1/K)
flsh	0	nein	Flag for self-heating calculation
rth	0.0	nein	Thermal resistance (K/W)
zetarth	0.0	nein	Exponent factor for temperature dependent thermal resistance
cth	0.0	nein	Thermal capacitance (Ws/K)
tnom	27	nein	Temperature for which parameters are valid (C)
dt	0.0	nein	Temperature change for particular transistor (K)
delte	0.0	nein	Emitter part coefficient of the zero bias hole charge temperature variation
deltc	0.0	nein	Collector part coefficient of the zero bias hole charge temperature variation
zetaver	0.0	nein	Bandgap TC parameter of ver
zetavef	0.0	nein	Bandgap TC parameter of vef
ibhrec	0.0	nein	Specific recombination current at the BC barrier for high forward injection (A)
Temp	27	nein	simulation temperature

Npn Hicum L0 V1.3¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	npn HICUM L0 v1.3
Beschreibung	HICUM Level 0 v1.3 verilog device
Schematic entry	`hicumL0V1p3`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	pnpsub_therm
Eigenschaften	102
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Typ	npn	ja	polarity [npn, pnp]
is	1.0e-16	nein	(Modified) saturation current (A)
it_mod	0	nein	Flag for using third order solution for transfer current
mcf	1.00	nein	Non-ideality coefficient of forward collector current
mcr	1.00	nein	Non-ideality coefficient of reverse collector current
vef	1.0e6	nein	forward Early voltage (normalization volt.) (V)
ver	1.0e6	nein	reverse Early voltage (normalization volt.) (V)
aver	0.0	nein	bias dependence for reverse Early voltage
iqf	1.0e6	nein	forward d.c. high-injection roll-off current (A)
fiqf	0	nein	flag for turning on base related critical current
iqr	1.0e6	nein	inverse d.c. high-injection roll-off current (A)
iqfh	1.0e6	nein	high-injection correction current (A)
tfh	0.0	nein	high-injection correction factor
ahq	0	nein	Smoothing factor for the d.c. injection width
ibes	1e-18	nein	BE saturation current (A)
mbe	1.0	nein	BE non-ideality factor
ires	0.0	nein	BE recombination saturation current (A)
mre	2.0	nein	BE recombination non-ideality factor
ibcs	0.0	nein	BC saturation current (A)
mbc	1.0	nein	BC non-ideality factor
cje0	1.0e-20	nein	Zero-bias BE depletion capacitance (F)
vde	0.9	nein	BE built-in voltage (V)
ze	0.5	nein	BE exponent factor
aje	2.5	nein	Ratio of maximum to zero-bias value
vdedc	0.9	nein	BE charge built-in voltage for d.c. transfer current (V)
zedc	0.5	nein	charge BE exponent factor for d.c. transfer current
ajedc	2.5	nein	BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current
t0	0.0	nein	low current transit time at Vbici=0 (s)
dt0h	0.0	nein	Base width modulation contribution (s)
tbvl	0.0	nein	SCR width modulation contribution (s)
tef0	0.0	nein	Storage time in neutral emitter (s)
gte	1.0	nein	Exponent factor for emitter transit time
thcs	0.0	nein	Saturation time at high current densities (s)
ahc	0.1	nein	Smoothing factor for current dependence
tr	0.0	nein	Storage time at inverse operation (s)
rci0	150	nein	Low-field collector resistance under emitter (Ohm)
vlim	0.5	nein	Voltage dividing ohmic and satur.region (V)
vpt	100	nein	Punch-through voltage (V)
vces	0.1	nein	Saturation voltage (V)
cjci0	1.0e-20	nein	Total zero-bias BC depletion capacitance (F)
vdci	0.7	nein	BC built-in voltage (V)
zci	0.333	nein	BC exponent factor
vptci	100	nein	Punch-through voltage of BC junction (V)
cjcx0	1.0e-20	nein	Zero-bias external BC depletion capacitance (F)
vdcx	0.7	nein	External BC built-in voltage (V)
zcx	0.333	nein	External BC exponent factor
vptcx	100	nein	Punch-through voltage (V)
fbc	1.0	nein	Split factor = Cjci0/Cjc0
rbi0	0.0	nein	Internal base resistance at zero-bias (Ohm)
vr0e	2.5	nein	forward Early voltage (normalization volt.) (V)
vr0c	1.0e6	nein	forward Early voltage (normalization volt.) (V)
fgeo	0.656	nein	Geometry factor
rbx	0.0	nein	External base series resistance (Ohm)
rcx	0.0	nein	Emitter series resistance (Ohm)
re	0.0	nein	External collector series resistance (Ohm)
itss	0.0	nein	Substrate transistor transfer saturation current (A)
msf	1.0	nein	Substrate transistor transfer current non-ideality factor
iscs	0.0	nein	SC saturation current (A)
msc	1.0	nein	SC non-ideality factor
cjs0	1.0e-20	nein	Zero-bias SC depletion capacitance (F)
vds	0.3	nein	SC built-in voltage (V)
zs	0.3	nein	External SC exponent factor
vpts	100	nein	SC punch-through voltage (V)
cbcpar	0.0	nein	Collector-base isolation (overlap) capacitance (F)
cbepar	0.0	nein	Emitter-base oxide capacitance (F)
eavl	0.0	nein	Exponent factor
kavl	0.0	nein	Prefactor
kf	0.0	nein	flicker noise coefficient (M^(1-AF))
af	2.0	nein	flicker noise exponent factor
vgb	1.2	nein	Bandgap-voltage (V)
vge	1.17	nein	Effective emitter bandgap-voltage (V)
vgc	1.17	nein	Effective collector bandgap-voltage (V)
vgs	1.17	nein	Effective substrate bandgap-voltage (V)
f1vg	-1.02377e-4	nein	Coefficient K1 in T-dependent bandgap equation (V/K)
f2vg	4.3215e-4	nein	Coefficient K2 in T-dependent bandgap equation (V/K)
alt0	0.0	nein	Frist-order TC of tf0 (1/K)
kt0	0.0	nein	Second-order TC of tf0 (1/K^2)
zetact	3.0	nein	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	nein	Exponent coefficient in BE junction current temperature dependence
zetaci	0.0	nein	TC of epi-collector diffusivity
alvs	0.0	nein	Relative TC of satur.drift velocity (1/K)
alces	0.0	nein	Relative TC of vces (1/K)
zetarbi	0.0	nein	TC of internal base resistance
zetarbx	0.0	nein	TC of external base resistance
zetarcx	0.0	nein	TC of external collector resistance
zetare	0.0	nein	TC of emitter resistances
zetaiqf	0.0	nein	TC of iqf
alkav	0.0	nein	TC of avalanche prefactor (1/K)
aleav	0.0	nein	TC of avalanche exponential factor (1/K)
zetarth	0.0	nein	Exponent factor for temperature dependent thermal resistance
tef_temp	1	nein	Flag for turning temperature dependence of tef0 on and off
zetaver	-1.0	nein	TC of Reverse Early voltage
zetavgbe	1.0	nein	TC of AVER
dvgbe	0.0	nein	Bandgap difference between base and BE-junction
aliqfh	0	nein	Frist-order TC of iqfh (1/K)
kiqfh	0	nein	Second-order TC of iqfh (1/K^2)
flsh	0	nein	Flag for self-heating calculation
rth	0.0	nein	Thermal resistance (K/W)
cth	0.0	nein	Thermal capacitance (Ws/K)
tnom	27	nein	Temperature for which parameters are valid (C)
dt	0.0	nein	Temperature change for particular transistor (K)
Temp	27	nein	simulation temperature

Pnp Hicum L0 V1.3¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	pnp HICUM L0 v1.3
Beschreibung	HICUM Level 0 v1.3 verilog device
Schematic entry	`hicumL0V1p3`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	pnpsub_therm
Eigenschaften	102
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Typ	pnp	ja	polarity [npn, pnp]
is	1.0e-16	nein	(Modified) saturation current (A)
it_mod	0	nein	Flag for using third order solution for transfer current
mcf	1.00	nein	Non-ideality coefficient of forward collector current
mcr	1.00	nein	Non-ideality coefficient of reverse collector current
vef	1.0e6	nein	forward Early voltage (normalization volt.) (V)
ver	1.0e6	nein	reverse Early voltage (normalization volt.) (V)
aver	0.0	nein	bias dependence for reverse Early voltage
iqf	1.0e6	nein	forward d.c. high-injection roll-off current (A)
fiqf	0	nein	flag for turning on base related critical current
iqr	1.0e6	nein	inverse d.c. high-injection roll-off current (A)
iqfh	1.0e6	nein	high-injection correction current (A)
tfh	0.0	nein	high-injection correction factor
ahq	0	nein	Smoothing factor for the d.c. injection width
ibes	1e-18	nein	BE saturation current (A)
mbe	1.0	nein	BE non-ideality factor
ires	0.0	nein	BE recombination saturation current (A)
mre	2.0	nein	BE recombination non-ideality factor
ibcs	0.0	nein	BC saturation current (A)
mbc	1.0	nein	BC non-ideality factor
cje0	1.0e-20	nein	Zero-bias BE depletion capacitance (F)
vde	0.9	nein	BE built-in voltage (V)
ze	0.5	nein	BE exponent factor
aje	2.5	nein	Ratio of maximum to zero-bias value
vdedc	0.9	nein	BE charge built-in voltage for d.c. transfer current (V)
zedc	0.5	nein	charge BE exponent factor for d.c. transfer current
ajedc	2.5	nein	BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current
t0	0.0	nein	low current transit time at Vbici=0 (s)
dt0h	0.0	nein	Base width modulation contribution (s)
tbvl	0.0	nein	SCR width modulation contribution (s)
tef0	0.0	nein	Storage time in neutral emitter (s)
gte	1.0	nein	Exponent factor for emitter transit time
thcs	0.0	nein	Saturation time at high current densities (s)
ahc	0.1	nein	Smoothing factor for current dependence
tr	0.0	nein	Storage time at inverse operation (s)
rci0	150	nein	Low-field collector resistance under emitter (Ohm)
vlim	0.5	nein	Voltage dividing ohmic and satur.region (V)
vpt	100	nein	Punch-through voltage (V)
vces	0.1	nein	Saturation voltage (V)
cjci0	1.0e-20	nein	Total zero-bias BC depletion capacitance (F)
vdci	0.7	nein	BC built-in voltage (V)
zci	0.333	nein	BC exponent factor
vptci	100	nein	Punch-through voltage of BC junction (V)
cjcx0	1.0e-20	nein	Zero-bias external BC depletion capacitance (F)
vdcx	0.7	nein	External BC built-in voltage (V)
zcx	0.333	nein	External BC exponent factor
vptcx	100	nein	Punch-through voltage (V)
fbc	1.0	nein	Split factor = Cjci0/Cjc0
rbi0	0.0	nein	Internal base resistance at zero-bias (Ohm)
vr0e	2.5	nein	forward Early voltage (normalization volt.) (V)
vr0c	1.0e6	nein	forward Early voltage (normalization volt.) (V)
fgeo	0.656	nein	Geometry factor
rbx	0.0	nein	External base series resistance (Ohm)
rcx	0.0	nein	Emitter series resistance (Ohm)
re	0.0	nein	External collector series resistance (Ohm)
itss	0.0	nein	Substrate transistor transfer saturation current (A)
msf	1.0	nein	Substrate transistor transfer current non-ideality factor
iscs	0.0	nein	SC saturation current (A)
msc	1.0	nein	SC non-ideality factor
cjs0	1.0e-20	nein	Zero-bias SC depletion capacitance (F)
vds	0.3	nein	SC built-in voltage (V)
zs	0.3	nein	External SC exponent factor
vpts	100	nein	SC punch-through voltage (V)
cbcpar	0.0	nein	Collector-base isolation (overlap) capacitance (F)
cbepar	0.0	nein	Emitter-base oxide capacitance (F)
eavl	0.0	nein	Exponent factor
kavl	0.0	nein	Prefactor
kf	0.0	nein	flicker noise coefficient (M^(1-AF))
af	2.0	nein	flicker noise exponent factor
vgb	1.2	nein	Bandgap-voltage (V)
vge	1.17	nein	Effective emitter bandgap-voltage (V)
vgc	1.17	nein	Effective collector bandgap-voltage (V)
vgs	1.17	nein	Effective substrate bandgap-voltage (V)
f1vg	-1.02377e-4	nein	Coefficient K1 in T-dependent bandgap equation (V/K)
f2vg	4.3215e-4	nein	Coefficient K2 in T-dependent bandgap equation (V/K)
alt0	0.0	nein	Frist-order TC of tf0 (1/K)
kt0	0.0	nein	Second-order TC of tf0 (1/K^2)
zetact	3.0	nein	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	nein	Exponent coefficient in BE junction current temperature dependence
zetaci	0.0	nein	TC of epi-collector diffusivity
alvs	0.0	nein	Relative TC of satur.drift velocity (1/K)
alces	0.0	nein	Relative TC of vces (1/K)
zetarbi	0.0	nein	TC of internal base resistance
zetarbx	0.0	nein	TC of external base resistance
zetarcx	0.0	nein	TC of external collector resistance
zetare	0.0	nein	TC of emitter resistances
zetaiqf	0.0	nein	TC of iqf
alkav	0.0	nein	TC of avalanche prefactor (1/K)
aleav	0.0	nein	TC of avalanche exponential factor (1/K)
zetarth	0.0	nein	Exponent factor for temperature dependent thermal resistance
tef_temp	1	nein	Flag for turning temperature dependence of tef0 on and off
zetaver	-1.0	nein	TC of Reverse Early voltage
zetavgbe	1.0	nein	TC of AVER
dvgbe	0.0	nein	Bandgap difference between base and BE-junction
aliqfh	0	nein	Frist-order TC of iqfh (1/K)
kiqfh	0	nein	Second-order TC of iqfh (1/K^2)
flsh	0	nein	Flag for self-heating calculation
rth	0.0	nein	Thermal resistance (K/W)
cth	0.0	nein	Thermal capacitance (Ws/K)
tnom	27	nein	Temperature for which parameters are valid (C)
dt	0.0	nein	Temperature change for particular transistor (K)
Temp	27	nein	simulation temperature

Hicum L2 V2.23¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	HICUM L2 v2.23
Beschreibung	HICUM Level 2 v2.23 verilog device
Schematic entry	`hicumL2V2p23`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	npnsub_therm
Eigenschaften	114
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
c10	2.0E-30	nein	GICCR constant (A^2s)
qp0	2.0E-14	nein	Zero-bias hole charge (Coul)
ich	0.0	nein	High-current correction for 2D and 3D effects (A)
hfe	1.0	nein	Emitter minority charge weighting factor in HBTs
hfc	1.0	nein	Collector minority charge weighting factor in HBTs
hjei	1.0	nein	B-E depletion charge weighting factor in HBTs
hjci	1.0	nein	B-C depletion charge weighting factor in HBTs
ibeis	1.0E-18	nein	Internal B-E saturation current (A)
mbei	1.0	nein	Internal B-E current ideality factor
ireis	0.0	nein	Internal B-E recombination saturation current (A)
mrei	2.0	nein	Internal B-E recombination current ideality factor
ibeps	0.0	nein	Peripheral B-E saturation current (A)
mbep	1.0	nein	Peripheral B-E current ideality factor
ireps	0.0	nein	Peripheral B-E recombination saturation current (A)
mrep	2.0	nein	Peripheral B-E recombination current ideality factor
mcf	1.0	nein	Non-ideality factor for III-V HBTs
tbhrec	0.0	nein	Base current recombination time constant at B-C barrier for high forward injection (s)
ibcis	1.0E-16	nein	Internal B-C saturation current (A)
mbci	1.0	nein	Internal B-C current ideality factor
ibcxs	0.0	nein	External B-C saturation current (A)
mbcx	1.0	nein	External B-C current ideality factor
ibets	0.0	nein	B-E tunneling saturation current (A)
abet	40	nein	Exponent factor for tunneling current
tunode	1	nein	Specifies the base node connection for the tunneling current
favl	0.0	nein	Avalanche current factor (1/V)
qavl	0.0	nein	Exponent factor for avalanche current (Coul)
alfav	0.0	nein	Relative TC for FAVL (1/K)
alqav	0.0	nein	Relative TC for QAVL (1/K)
rbi0	0.0	nein	Zero bias internal base resistance (Ohm)
rbx	0.0	nein	External base series resistance (Ohm)
fgeo	0.6557	nein	Factor for geometry dependence of emitter current crowding
fdqr0	0.0	nein	Correction factor for modulation by B-E and B-C space charge layer
fcrbi	0.0	nein	Ratio of HF shunt to total internal capacitance (lateral NQS effect)
fqi	1.0	nein	Ration of internal to total minority charge
re	0.0	nein	Emitter series resistance (Ohm)
rcx	0.0	nein	External collector series resistance (Ohm)
itss	0.0	nein	Substrate transistor transfer saturation current (A)
msf	1.0	nein	Forward ideality factor of substrate transfer current
iscs	0.0	nein	C-S diode saturation current (A)
msc	1.0	nein	Ideality factor of C-S diode current
tsf	0.0	nein	Transit time for forward operation of substrate transistor (s)
rsu	0.0	nein	Substrate series resistance (Ohm)
csu	0.0	nein	Substrate shunt capacitance (F)
cjei0	1.0E-20	nein	Internal B-E zero-bias depletion capacitance (F)
vdei	0.9	nein	Internal B-E built-in potential (V)
zei	0.5	nein	Internal B-E grading coefficient
ajei	2.5	nein	Ratio of maximum to zero-bias value of internal B-E capacitance
cjep0	1.0E-20	nein	Peripheral B-E zero-bias depletion capacitance (F)
vdep	0.9	nein	Peripheral B-E built-in potential (V)
zep	0.5	nein	Peripheral B-E grading coefficient
ajep	2.5	nein	Ratio of maximum to zero-bias value of peripheral B-E capacitance
cjci0	1.0E-20	nein	Internal B-C zero-bias depletion capacitance (F)
vdci	0.7	nein	Internal B-C built-in potential (V)
zci	0.4	nein	Internal B-C grading coefficient
vptci	100	nein	Internal B-C punch-through voltage (V)
cjcx0	1.0E-20	nein	External B-C zero-bias depletion capacitance (F)
vdcx	0.7	nein	External B-C built-in potential (V)
zcx	0.4	nein	External B-C grading coefficient
vptcx	100	nein	External B-C punch-through voltage (V)
fbcpar	0.0	nein	Partitioning factor of parasitic B-C cap
fbepar	1.0	nein	Partitioning factor of parasitic B-E cap
cjs0	0.0	nein	C-S zero-bias depletion capacitance (F)
vds	0.6	nein	C-S built-in potential (V)
zs	0.5	nein	C-S grading coefficient
vpts	100	nein	C-S punch-through voltage (V)
t0	0.0	nein	Low current forward transit time at VBC=0V (s)
dt0h	0.0	nein	Time constant for base and B-C space charge layer width modulation (s)
tbvl	0.0	nein	Time constant for modelling carrier jam at low VCE (s)
tef0	0.0	nein	Neutral emitter storage time (s)
gtfe	1.0	nein	Exponent factor for current dependence of neutral emitter storage time
thcs	0.0	nein	Saturation time constant at high current densities (s)
ahc	0.1	nein	Smoothing factor for current dependence of base and collector transit time
fthc	0.0	nein	Partitioning factor for base and collector portion
rci0	150	nein	Internal collector resistance at low electric field (Ohm)
vlim	0.5	nein	Voltage separating ohmic and saturation velocity regime (V)
vces	0.1	nein	Internal C-E saturation voltage (V)
vpt	0.0	nein	Collector punch-through voltage (V)
tr	0.0	nein	Storage time for inverse operation (s)
cbepar	0.0	nein	Total parasitic B-E capacitance (F)
cbcpar	0.0	nein	Total parasitic B-C capacitance (F)
alqf	0.0	nein	Factor for additional delay time of minority charge
alit	0.0	nein	Factor for additional delay time of transfer current
flnqs	0	nein	Flag for turning on and off of vertical NQS effect
kf	0.0	nein	Flicker noise coefficient
af	2.0	nein	Flicker noise exponent factor
cfbe	-1	nein	Flag for determining where to tag the flicker noise source
latb	0.0	nein	Scaling factor for collector minority charge in direction of emitter width
latl	0.0	nein	Scaling factor for collector minority charge in direction of emitter length
vgb	1.17	nein	Bandgap voltage extrapolated to 0 K (V)
alt0	0.0	nein	First order relative TC of parameter T0 (1/K)
kt0	0.0	nein	Second order relative TC of parameter T0
zetaci	0.0	nein	Temperature exponent for RCI0
alvs	0.0	nein	Relative TC of saturation drift velocity (1/K)
alces	0.0	nein	Relative TC of VCES (1/K)
zetarbi	0.0	nein	Temperature exponent of internal base resistance
zetarbx	0.0	nein	Temperature exponent of external base resistance
zetarcx	0.0	nein	Temperature exponent of external collector resistance
zetare	0.0	nein	Temperature exponent of emitter resistance
zetacx	1.0	nein	Temperature exponent of mobility in substrate transistor transit time
vge	1.17	nein	Effective emitter bandgap voltage (V)
vgc	1.17	nein	Effective collector bandgap voltage (V)
vgs	1.17	nein	Effective substrate bandgap voltage (V)
f1vg	-1.02377e-4	nein	Coefficient K1 in T-dependent band-gap equation
f2vg	4.3215e-4	nein	Coefficient K2 in T-dependent band-gap equation
zetact	3.0	nein	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	nein	Exponent coefficient in B-E junction current temperature dependence
alb	0.0	nein	Relative TC of forward current gain for V2.1 model (1/K)
flsh	0	nein	Flag for turning on and off self-heating effect
rth	0.0	nein	Thermal resistance (K/W)
cth	0.0	nein	Thermal capacitance (J/W)
flcomp	0.0	nein	Flag for compatibility with v2.1 model (0=v2.1)
tnom	27.0	nein	Temperature at which parameters are specified (C)
dt	0.0	nein	Temperature change w.r.t. chip temperature for particular transistor (K)
Temp	27	nein	simulation temperature

Hicum L2 V2.24¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	HICUM L2 v2.24
Beschreibung	HICUM Level 2 v2.24 verilog device
Schematic entry	`hicumL2V2p24`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	npnsub_therm
Eigenschaften	114
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
c10	2.0E-30	nein	GICCR constant (A^2s)
qp0	2.0E-14	nein	Zero-bias hole charge (Coul)
ich	0.0	nein	High-current correction for 2D and 3D effects (A)
hfe	1.0	nein	Emitter minority charge weighting factor in HBTs
hfc	1.0	nein	Collector minority charge weighting factor in HBTs
hjei	1.0	nein	B-E depletion charge weighting factor in HBTs
hjci	1.0	nein	B-C depletion charge weighting factor in HBTs
ibeis	1.0E-18	nein	Internal B-E saturation current (A)
mbei	1.0	nein	Internal B-E current ideality factor
ireis	0.0	nein	Internal B-E recombination saturation current (A)
mrei	2.0	nein	Internal B-E recombination current ideality factor
ibeps	0.0	nein	Peripheral B-E saturation current (A)
mbep	1.0	nein	Peripheral B-E current ideality factor
ireps	0.0	nein	Peripheral B-E recombination saturation current (A)
mrep	2.0	nein	Peripheral B-E recombination current ideality factor
mcf	1.0	nein	Non-ideality factor for III-V HBTs
tbhrec	0.0	nein	Base current recombination time constant at B-C barrier for high forward injection (s)
ibcis	1.0E-16	nein	Internal B-C saturation current (A)
mbci	1.0	nein	Internal B-C current ideality factor
ibcxs	0.0	nein	External B-C saturation current (A)
mbcx	1.0	nein	External B-C current ideality factor
ibets	0.0	nein	B-E tunneling saturation current (A)
abet	40	nein	Exponent factor for tunneling current
tunode	1	nein	Specifies the base node connection for the tunneling current
favl	0.0	nein	Avalanche current factor (1/V)
qavl	0.0	nein	Exponent factor for avalanche current (Coul)
alfav	0.0	nein	Relative TC for FAVL (1/K)
alqav	0.0	nein	Relative TC for QAVL (1/K)
rbi0	0.0	nein	Zero bias internal base resistance (Ohm)
rbx	0.0	nein	External base series resistance (Ohm)
fgeo	0.6557	nein	Factor for geometry dependence of emitter current crowding
fdqr0	0.0	nein	Correction factor for modulation by B-E and B-C space charge layer
fcrbi	0.0	nein	Ratio of HF shunt to total internal capacitance (lateral NQS effect)
fqi	1.0	nein	Ration of internal to total minority charge
re	0.0	nein	Emitter series resistance (Ohm)
rcx	0.0	nein	External collector series resistance (Ohm)
itss	0.0	nein	Substrate transistor transfer saturation current (A)
msf	1.0	nein	Forward ideality factor of substrate transfer current
iscs	0.0	nein	C-S diode saturation current (A)
msc	1.0	nein	Ideality factor of C-S diode current
tsf	0.0	nein	Transit time for forward operation of substrate transistor (s)
rsu	0.0	nein	Substrate series resistance (Ohm)
csu	0.0	nein	Substrate shunt capacitance (F)
cjei0	1.0E-20	nein	Internal B-E zero-bias depletion capacitance (F)
vdei	0.9	nein	Internal B-E built-in potential (V)
zei	0.5	nein	Internal B-E grading coefficient
ajei	2.5	nein	Ratio of maximum to zero-bias value of internal B-E capacitance
cjep0	1.0E-20	nein	Peripheral B-E zero-bias depletion capacitance (F)
vdep	0.9	nein	Peripheral B-E built-in potential (V)
zep	0.5	nein	Peripheral B-E grading coefficient
ajep	2.5	nein	Ratio of maximum to zero-bias value of peripheral B-E capacitance
cjci0	1.0E-20	nein	Internal B-C zero-bias depletion capacitance (F)
vdci	0.7	nein	Internal B-C built-in potential (V)
zci	0.4	nein	Internal B-C grading coefficient
vptci	100	nein	Internal B-C punch-through voltage (V)
cjcx0	1.0E-20	nein	External B-C zero-bias depletion capacitance (F)
vdcx	0.7	nein	External B-C built-in potential (V)
zcx	0.4	nein	External B-C grading coefficient
vptcx	100	nein	External B-C punch-through voltage (V)
fbcpar	0.0	nein	Partitioning factor of parasitic B-C cap
fbepar	1.0	nein	Partitioning factor of parasitic B-E cap
cjs0	0.0	nein	C-S zero-bias depletion capacitance (F)
vds	0.6	nein	C-S built-in potential (V)
zs	0.5	nein	C-S grading coefficient
vpts	100	nein	C-S punch-through voltage (V)
t0	0.0	nein	Low current forward transit time at VBC=0V (s)
dt0h	0.0	nein	Time constant for base and B-C space charge layer width modulation (s)
tbvl	0.0	nein	Time constant for modelling carrier jam at low VCE (s)
tef0	0.0	nein	Neutral emitter storage time (s)
gtfe	1.0	nein	Exponent factor for current dependence of neutral emitter storage time
thcs	0.0	nein	Saturation time constant at high current densities (s)
ahc	0.1	nein	Smoothing factor for current dependence of base and collector transit time
fthc	0.0	nein	Partitioning factor for base and collector portion
rci0	150	nein	Internal collector resistance at low electric field (Ohm)
vlim	0.5	nein	Voltage separating ohmic and saturation velocity regime (V)
vces	0.1	nein	Internal C-E saturation voltage (V)
vpt	100.0	nein	Collector punch-through voltage (V)
tr	0.0	nein	Storage time for inverse operation (s)
cbepar	0.0	nein	Total parasitic B-E capacitance (F)
cbcpar	0.0	nein	Total parasitic B-C capacitance (F)
alqf	0.0	nein	Factor for additional delay time of minority charge
alit	0.0	nein	Factor for additional delay time of transfer current
flnqs	0	nein	Flag for turning on and off of vertical NQS effect
kf	0.0	nein	Flicker noise coefficient
af	2.0	nein	Flicker noise exponent factor
cfbe	-1	nein	Flag for determining where to tag the flicker noise source
latb	0.0	nein	Scaling factor for collector minority charge in direction of emitter width
latl	0.0	nein	Scaling factor for collector minority charge in direction of emitter length
vgb	1.17	nein	Bandgap voltage extrapolated to 0 K (V)
alt0	0.0	nein	First order relative TC of parameter T0 (1/K)
kt0	0.0	nein	Second order relative TC of parameter T0
zetaci	0.0	nein	Temperature exponent for RCI0
alvs	0.0	nein	Relative TC of saturation drift velocity (1/K)
alces	0.0	nein	Relative TC of VCES (1/K)
zetarbi	0.0	nein	Temperature exponent of internal base resistance
zetarbx	0.0	nein	Temperature exponent of external base resistance
zetarcx	0.0	nein	Temperature exponent of external collector resistance
zetare	0.0	nein	Temperature exponent of emitter resistance
zetacx	1.0	nein	Temperature exponent of mobility in substrate transistor transit time
vge	1.17	nein	Effective emitter bandgap voltage (V)
vgc	1.17	nein	Effective collector bandgap voltage (V)
vgs	1.17	nein	Effective substrate bandgap voltage (V)
f1vg	-1.02377e-4	nein	Coefficient K1 in T-dependent band-gap equation
f2vg	4.3215e-4	nein	Coefficient K2 in T-dependent band-gap equation
zetact	3.0	nein	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	nein	Exponent coefficient in B-E junction current temperature dependence
alb	0.0	nein	Relative TC of forward current gain for V2.1 model (1/K)
flsh	0	nein	Flag for turning on and off self-heating effect
rth	0.0	nein	Thermal resistance (K/W)
cth	0.0	nein	Thermal capacitance (J/W)
flcomp	0.0	nein	Flag for compatibility with v2.1 model (0=v2.1)
tnom	27.0	nein	Temperature at which parameters are specified (C)
dt	0.0	nein	Temperature change w.r.t. chip temperature for particular transistor (K)
Temp	27.0	nein	simulation temperature

Hicum L2 V2.31¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	HICUM L2 V2.31
Beschreibung	hicumL2V2p31n verilog device
Schematic entry	`hicumL2V2p31n`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	hicumL2V2p31n
Eigenschaften	129
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
c10	2.0E-30	nein	GICCR constant (A^2s)
qp0	2.0E-14	nein	Zero-bias hole charge (Coul)
ich	0.0	nein	High-current correction for 2D and 3D effects (A)
hf0	1.0	nein	Weight factor for the low current minority charge
hfe	1.0	nein	Emitter minority charge weighting factor in HBTs
hfc	1.0	nein	Collector minority charge weighting factor in HBTs
hjei	1.0	nein	B-E depletion charge weighting factor in HBTs
ahjei	0.0	nein	Parameter describing the slope of hjEi(VBE)
rhjei	1.0	nein	Smoothing parameter for hjEi(VBE) at high voltage
hjci	1.0	nein	B-C depletion charge weighting factor in HBTs
ibeis	1.0E-18	nein	Internal B-E saturation current (A)
mbei	1.0	nein	Internal B-E current ideality factor
ireis	0.0	nein	Internal B-E recombination saturation current (A)
mrei	2.0	nein	Internal B-E recombination current ideality factor
ibeps	0.0	nein	Peripheral B-E saturation current (A)
mbep	1.0	nein	Peripheral B-E current ideality factor
ireps	0.0	nein	Peripheral B-E recombination saturation current (A)
mrep	2.0	nein	Peripheral B-E recombination current ideality factor
mcf	1.0	nein	Non-ideality factor for III-V HBTs
tbhrec	0.0	nein	Base current recombination time constant at B-C barrier for high forward injection (s)
ibcis	1.0E-16	nein	Internal B-C saturation current (A)
mbci	1.0	nein	Internal B-C current ideality factor
ibcxs	0.0	nein	External B-C saturation current (A)
mbcx	1.0	nein	External B-C current ideality factor
ibets	0.0	nein	B-E tunneling saturation current (A)
abet	40	nein	Exponent factor for tunneling current
tunode	1	nein	Specifies the base node connection for the tunneling current
favl	0.0	nein	Avalanche current factor (1/V)
qavl	0.0	nein	Exponent factor for avalanche current (Coul)
alfav	0.0	nein	Relative TC for FAVL (1/K)
alqav	0.0	nein	Relative TC for QAVL (1/K)
rbi0	0.0	nein	Zero bias internal base resistance (Ohm)
rbx	0.0	nein	External base series resistance (Ohm)
fgeo	0.6557	nein	Factor for geometry dependence of emitter current crowding
fdqr0	0.0	nein	Correction factor for modulation by B-E and B-C space charge layer
fcrbi	0.0	nein	Ratio of HF shunt to total internal capacitance (lateral NQS effect)
fqi	1.0	nein	Ration of internal to total minority charge
re	0.0	nein	Emitter series resistance (Ohm)
rcx	0.0	nein	External collector series resistance (Ohm)
itss	0.0	nein	Substrate transistor transfer saturation current (A)
msf	1.0	nein	Forward ideality factor of substrate transfer current
iscs	0.0	nein	C-S diode saturation current (A)
msc	1.0	nein	Ideality factor of C-S diode current
tsf	0.0	nein	Transit time for forward operation of substrate transistor (s)
rsu	0.0	nein	Substrate series resistance (Ohm)
csu	0.0	nein	Substrate shunt capacitance (F)
cjei0	1.0E-20	nein	Internal B-E zero-bias depletion capacitance (F)
vdei	0.9	nein	Internal B-E built-in potential (V)
zei	0.5	nein	Internal B-E grading coefficient
ajei	2.5	nein	Ratio of maximum to zero-bias value of internal B-E capacitance
cjep0	1.0E-20	nein	Peripheral B-E zero-bias depletion capacitance (F)
vdep	0.9	nein	Peripheral B-E built-in potential (V)
zep	0.5	nein	Peripheral B-E grading coefficient
ajep	2.5	nein	Ratio of maximum to zero-bias value of peripheral B-E capacitance
cjci0	1.0E-20	nein	Internal B-C zero-bias depletion capacitance (F)
vdci	0.7	nein	Internal B-C built-in potential (V)
zci	0.4	nein	Internal B-C grading coefficient
vptci	100	nein	Internal B-C punch-through voltage (V)
cjcx0	1.0E-20	nein	External B-C zero-bias depletion capacitance (F)
vdcx	0.7	nein	External B-C built-in potential (V)
zcx	0.4	nein	External B-C grading coefficient
vptcx	100	nein	External B-C punch-through voltage (V)
fbcpar	0.0	nein	Partitioning factor of parasitic B-C cap
fbepar	1.0	nein	Partitioning factor of parasitic B-E cap
cjs0	0.0	nein	C-S zero-bias depletion capacitance (F)
vds	0.6	nein	C-S built-in potential (V)
zs	0.5	nein	C-S grading coefficient
vpts	100	nein	C-S punch-through voltage (V)
t0	0.0	nein	Low current forward transit time at VBC=0V (s)
dt0h	0.0	nein	Time constant for base and B-C space charge layer width modulation (s)
tbvl	0.0	nein	Time constant for modeling carrier jam at low VCE (s)
tef0	0.0	nein	Neutral emitter storage time (s)
gtfe	1.0	nein	Exponent factor for current dependence of neutral emitter storage time
thcs	0.0	nein	Saturation time constant at high current densities (s)
ahc	0.1	nein	Smoothing factor for current dependence of base and collector transit time
fthc	0.0	nein	Partitioning factor for base and collector portion
rci0	150	nein	Internal collector resistance at low electric field (Ohm)
vlim	0.5	nein	Voltage separating ohmic and saturation velocity regime (V)
vces	0.1	nein	Internal C-E saturation voltage (V)
vpt	100.0	nein	Collector punch-through voltage (V)
tr	0.0	nein	Storage time for inverse operation (s)
vcbar	0.0	nein	Barrier voltage (V)
icbar	0.0	nein	Normalization parameter (A)
acbar	0.01	nein	Smoothing parameter for barrier voltage
delck	2.0	nein	fitting factor for critical current
cbepar	0.0	nein	Total parasitic B-E capacitance (F)
cbcpar	0.0	nein	Total parasitic B-C capacitance (F)
alqf	0.167	nein	Factor for additional delay time of minority charge
alit	0.333	nein	Factor for additional delay time of transfer current
flnqs	0	nein	Flag for turning on and off of vertical NQS effect
kf	0.0	nein	Flicker noise coefficient
af	2.0	nein	Flicker noise exponent factor
cfbe	-1	nein	Flag for determining where to tag the flicker noise source
flcono	0	nein	Flag for turning on and off of correlated noise implementation
kfre	0.0	nein	Emitter resistance flicker noise coefficient
afre	2.0	nein	Emitter resistance flicker noise exponent factor
latb	0.0	nein	Scaling factor for collector minority charge in direction of emitter width
latl	0.0	nein	Scaling factor for collector minority charge in direction of emitter length
vgb	1.17	nein	Bandgap voltage extrapolated to 0 K (V)
alt0	0.0	nein	First order relative TC of parameter T0 (1/K)
kt0	0.0	nein	Second order relative TC of parameter T0
zetaci	0.0	nein	Temperature exponent for RCI0
alvs	0.0	nein	Relative TC of saturation drift velocity (1/K)
alces	0.0	nein	Relative TC of VCES (1/K)
zetarbi	0.0	nein	Temperature exponent of internal base resistance
zetarbx	0.0	nein	Temperature exponent of external base resistance
zetarcx	0.0	nein	Temperature exponent of external collector resistance
zetare	0.0	nein	Temperature exponent of emitter resistance
zetacx	1.0	nein	Temperature exponent of mobility in substrate transistor transit time
vge	1.17	nein	Effective emitter bandgap voltage (V)
vgc	1.17	nein	Effective collector bandgap voltage (V)
vgs	1.17	nein	Effective substrate bandgap voltage (V)
f1vg	-1.02377e-4	nein	Coefficient K1 in T-dependent band-gap equation
f2vg	4.3215e-4	nein	Coefficient K2 in T-dependent band-gap equation
zetact	3.0	nein	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	nein	Exponent coefficient in B-E junction current temperature dependence
alb	0.0	nein	Relative TC of forward current gain for V2.1 model (1/K)
dvgbe	0	nein	Bandgap difference between B and B-E junction used for hjEi0 and hf0 (V)
zetahjei	1	nein	Temperature coefficient for ahjEi
zetavgbe	1	nein	Temperature coefficient for hjEi0
flsh	0	nein	Flag for turning on and off self-heating effect
rth	0.0	nein	Thermal resistance (K/W)
zetarth	0.0	nein	Temperature coefficient for Rth
alrth	0.0	nein	First order relative TC of parameter Rth (1/K)
cth	0.0	nein	Thermal capacitance (J/W)
flcomp	0.0	nein	Flag for compatibility with v2.1 model (0=v2.1)
tnom	27.0	nein	Temperature at which parameters are specified (C)
dt	0.0	nein	Temperature change w.r.t. chip temperature for particular transistor (K)
Temp	27.0	nein	simulation temperature

Photodiode¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Photodiode
Beschreibung	Photodiode verilog device
Schematic entry	`photodiode`
Netlist entry	`PD`
Typ	AnalogComponent
Bitmap file	photodiode
Eigenschaften	23
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
N	1.35	nein	photodiode emission coefficient
Rseries	1e-3	nein	series lead resistance (Ohm)
Is	0.34e-12	nein	diode dark current (A)
Bv	60	nein	reverse breakdown voltage (V)
Ibv	1e-3	nein	current at reverse breakdown voltage (A)
Vj	0.7	nein	junction potential (V)
Cj0	60e-12	nein	zero-bias junction capacitance (F)
M	0.5	nein	Gradationskoeffizient
Area	1.0	nein	diode relative area
Tnom	26.85	nein	parameter measurement temperature (Celsius)
Fc	0.5	nein	Sperrschichtkapazitäts-Linearisierungskoeffizient
Tt	10e-9	nein	transit time (s)
Xti	3.0	nein	Temperaturexponent des Sättigungsstroms
Eg	1.16	nein	energy gap (eV)
Responsivity	0.5	nein	responsivity (A/W)
Rsh	5e8	nein	shunt resistance (Ohm)
QEpercent	80	nein	quantum efficiency (%)
Lambda	900	nein	light wavelength (nm)
LEVEL	1	nein	responsivity calculator selector
Kf	1e-12	nein	1/f-Rauschkoeffizient
Af	1.0	nein	1/f-Rauschexponent
Ffe	1.0	nein	Frequenzexponent für 1/f-Rauschen
Temp	26.85	nein	simulation temperature

Phototransistor¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Phototransistor
Beschreibung	Phototransistor verilog device
Schematic entry	`phototransistor`
Netlist entry	`PT`
Typ	AnalogComponent
Bitmap file	phototransistor
Eigenschaften	30
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Bf	100	nein	ideale Vorwärtsstromverstärkung
Br	0.1	nein	ideale Rückwärtsstromverstärkung
Is	1e-10	nein	dark current (A)
Nf	1	nein	Vorwärtsemissionskoeffizient
Nr	1	nein	Rückwärtsemissionskoeffizient
Vaf	100	nein	forward early voltage (V)
Var	100	nein	reverse early voltage (V)
Mje	0.33	nein	BE-Gradationskoeffizient
Vje	0.75	nein	base-emitter junction built-in potential (V)
Cje	1e-12	nein	base-emitter zero-bias depletion capacitance (F)
Mjc	0.33	nein	BC-Gradationskoeffizient
Vjc	0.75	nein	base-collector junction built-in potential (V)
Cjc	2e-12	nein	base-collector zero-bias depletion capacitance (F)
Tr	100n	nein	ideal reverse transit time (s)
Tf	0.1n	nein	ideal forward transit time (s)
Ikf	10	nein	high current corner for forward beta (A)
Ikr	10	nein	high current corner for reverse beta (A)
Rc	10	nein	collector series resistance (Ohm)
Re	1	nein	emitter series resistance (Ohm)
Rb	100	nein	base series resistance (Ohm)
Kf	1e-12	nein	1/f-Rauschkoeffizient
Ffe	1	nein	1/f-Rauschkoeffizient
Af	1	nein	1/f-Rauschexponent
Responsivity	1.5	nein	responsivity at relative selectivity=100% (A/W)
P0	2.6122e3	nein	relative selectivity polynomial coefficient
P1	-1.489e1	nein	relative selectivity polynomial coefficient
P2	3.0332e-2	nein	relative selectivity polynomial coefficient
P3	-2.5708e-5	nein	relative selectivity polynomial coefficient
P4	7.6923e-9	nein	relative selectivity polynomial coefficient
Temp	26.85	nein	simulation temperature

Nigbt¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	NIGBT
Beschreibung	NIGBT verilog device
Schematic entry	`nigbt`
Netlist entry	`T`
Typ	AnalogComponent
Bitmap file	nigbt
Eigenschaften	19
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Agd	5.0e-6	nein	gate-drain overlap area (m**2)
Area	1.0e-5	nein	area of the device (m**2)
Kp	0.38	nein	MOS transconductance (A/V**2)
Tau	7.1e-6	nein	ambipolar recombination lifetime (s)
Wb	9.0e-5	nein	metallurgical base width (m)
BVf	1.0	nein	avalanche uniformity factor
BVn	4.0	nein	avalanche multiplication exponent
Cgs	1.24e-8	nein	gate-source capacitance per unit area (F/cm**2)
Coxd	3.5e-8	nein	gate-drain oxide capacitance per unit area (F/cm**2)
Jsne	6.5e-13	nein	emitter saturation current density (A/cm**2)
Kf	1.0	nein	triode region factor
Mun	1.5e-3	nein	electron mobility (cm**2/Vs)
Mup	4.5e-2	nein	hole mobility (cm**2/Vs)
Nb	2.0e14	nein	base doping (1/cm**3)
Theta	0.02	nein	transverse field factor (1/V)
Vt	4.7	nein	threshold voltage (V)
Vtd	1.0e-3	nein	gate-drain overlap depletion threshold (V)
Tnom	26.85	nein	parameter measurement temperature (Celsius)
Temp	26.85	nein	simulation temperature (Celsius)

Voltage Controlled Resistor¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Voltage Controlled Resistor
Beschreibung	spannungsgesteuerte Spannungsquelle
Schematic entry	`vcresistor`
Netlist entry	`VCR`
Typ	AnalogComponent
Bitmap file	vcresistor
Eigenschaften	1
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
gain	1	ja	Widerstands gain

Digital Components¶

Digital Source¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Digital-Quelle
Beschreibung	Digital-Quelle
Schematic entry	`DigiSource`
Netlist entry	`S`
Typ	Component
Bitmap file	digi_source
Eigenschaften	4
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Num	1	ja	Tornummer
init	low	nein	initial output value [low, high]
times	1ns; 1ns	nein	Zeitenliste für die Veränderung der Ausgabewerte
V	1 V	nein	Spannung des High-Pegels

Inverter¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Inverter
Beschreibung	logischer Inverter
Schematic entry	`Inv`
Netlist entry	`Y`
Typ	Component
Bitmap file	inverter
Eigenschaften	4
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
V	1 V	nein	Spannung des High-Pegels
t	0	nein	Verzögerungszeit
TR	10	nein	transfer function scaling factor
Symbol	old	nein	schematic symbol [old, DIN40900]

N-Port Or¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	n-Tor ODER
Beschreibung	logisches ODER
Schematic entry	`OR`
Netlist entry	`Y`
Typ	Component
Bitmap file	or
Eigenschaften	5
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
in	2	nein	Anzahl der Eingänge
V	1 V	nein	Spannung des High-Pegels
t	0	nein	Verzögerungszeit
TR	10	nein	transfer function scaling factor
Symbol	old	nein	schematic symbol [old, DIN40900]

N-Port Nor¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	n-Tor NOR
Beschreibung	logisches NOR
Schematic entry	`NOR`
Netlist entry	`Y`
Typ	Component
Bitmap file	nor
Eigenschaften	5
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
in	2	nein	Anzahl der Eingänge
V	1 V	nein	Spannung des High-Pegels
t	0	nein	Verzögerungszeit
TR	10	nein	transfer function scaling factor
Symbol	old	nein	schematic symbol [old, DIN40900]

N-Port And¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	n-Tor UND
Beschreibung	logisches UND
Schematic entry	`AND`
Netlist entry	`Y`
Typ	Component
Bitmap file	and
Eigenschaften	5
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
in	2	nein	Anzahl der Eingänge
V	1 V	nein	Spannung des High-Pegels
t	0	nein	Verzögerungszeit
TR	10	nein	transfer function scaling factor
Symbol	old	nein	schematic symbol [old, DIN40900]

N-Port Nand¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	n-Tor NAND
Beschreibung	logisches NAND
Schematic entry	`NAND`
Netlist entry	`Y`
Typ	Component
Bitmap file	nand
Eigenschaften	5
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
in	2	nein	Anzahl der Eingänge
V	1 V	nein	Spannung des High-Pegels
t	0	nein	Verzögerungszeit
TR	10	nein	transfer function scaling factor
Symbol	old	nein	schematic symbol [old, DIN40900]

N-Port Xor¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	n-Tor XOR
Beschreibung	logisches XOR
Schematic entry	`XOR`
Netlist entry	`Y`
Typ	Component
Bitmap file	xor
Eigenschaften	5
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
in	2	nein	Anzahl der Eingänge
V	1 V	nein	Spannung des High-Pegels
t	0	nein	Verzögerungszeit
TR	10	nein	transfer function scaling factor
Symbol	old	nein	schematic symbol [old, DIN40900]

N-Port Xnor¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	n-Tor XNOR
Beschreibung	logisches XNOR
Schematic entry	`XNOR`
Netlist entry	`Y`
Typ	Component
Bitmap file	xnor
Eigenschaften	5
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
in	2	nein	Anzahl der Eingänge
V	1 V	nein	Spannung des High-Pegels
t	0	nein	Verzögerungszeit
TR	10	nein	transfer function scaling factor
Symbol	old	nein	schematic symbol [old, DIN40900]

Buffer¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Buffer
Beschreibung	logical buffer
Schematic entry	`Buf`
Netlist entry	`Y`
Typ	Component
Bitmap file	buffer
Eigenschaften	4
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
V	1 V	nein	Spannung des High-Pegels
t	0	nein	Verzögerungszeit
TR	10	nein	transfer function scaling factor
Symbol	old	nein	schematic symbol [old, DIN40900]

4X2 Andor¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	4x2 AndOr
Beschreibung	4x2 andor verilog device
Schematic entry	`andor4x2`
Netlist entry	`Y`
Typ	Component
Bitmap file	andor4x2
Eigenschaften	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
TR	6	nein	transfer function high scaling factor
Delay	1 ns	nein	output delay (s)

4X3 Andor¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	4x3 AndOr
Beschreibung	4x3 andor verilog device
Schematic entry	`andor4x3`
Netlist entry	`Y`
Typ	Component
Bitmap file	andor4x3
Eigenschaften	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
TR	6	nein	transfer function high scaling factor
Delay	1 ns	nein	output delay (s)

4X4 Andor¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	4x4 AndOr
Beschreibung	4x4 andor verilog device
Schematic entry	`andor4x4`
Netlist entry	`Y`
Typ	Component
Bitmap file	andor4x4
Eigenschaften	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
TR	6	nein	transfer function high scaling factor
Delay	1 ns	nein	output delay (s)

2To1 Mux¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	2to1 Mux
Beschreibung	2to1 multiplexer verilog device
Schematic entry	`mux2to1`
Netlist entry	`Y`
Typ	Component
Bitmap file	mux2to1
Eigenschaften	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
TR	6	nein	transfer function high scaling factor
Delay	1 ns	nein	output delay (s)

4To1 Mux¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	4to1 Mux
Beschreibung	4to1 multiplexer verilog device
Schematic entry	`mux4to1`
Netlist entry	`Y`
Typ	Component
Bitmap file	mux4to1
Eigenschaften	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
TR	6	nein	transfer function high scaling factor
Delay	1 ns	nein	output delay (s)

8To1 Mux¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	8to1 Mux
Beschreibung	8to1 multiplexer verilog device
Schematic entry	`mux8to1`
Netlist entry	`Y`
Typ	Component
Bitmap file	mux8to1
Eigenschaften	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
TR	6	nein	transfer function high scaling factor
Delay	1 ns	nein	output delay (s)

2To4 Demux¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	2to4 Demux
Beschreibung	2to4 demultiplexer verilog device
Schematic entry	`dmux2to4`
Netlist entry	`Y`
Typ	Component
Bitmap file	dmux2to4
Eigenschaften	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
TR	6	nein	transfer function high scaling factor
Delay	1 ns	nein	output delay (s)

3To8 Demux¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	3to8 Demux
Beschreibung	3to8 demultiplexer verilog device
Schematic entry	`dmux3to8`
Netlist entry	`Y`
Typ	Component
Bitmap file	dmux3to8
Eigenschaften	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
TR	6	nein	transfer function high scaling factor
Delay	1 ns	nein	output delay (s)

4To16 Demux¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	4to16 Demux
Beschreibung	4to16 demultiplexer verilog device
Schematic entry	`dmux4to16`
Netlist entry	`Y`
Typ	Component
Bitmap file	dmux4to16
Eigenschaften	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
TR	6	nein	transfer function high scaling factor
Delay	1 ns	nein	output delay (s)

1Bit Halfadder¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	1Bit HalfAdder
Beschreibung	1bit half adder verilog device
Schematic entry	`ha1b`
Netlist entry	`Y`
Typ	Component
Bitmap file	ha1b
Eigenschaften	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
TR	6	nein	transfer function high scaling factor
Delay	1 ns	nein	output delay (s)

1Bit Fulladder¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	1Bit FullAdder
Beschreibung	1bit full adder verilog device
Schematic entry	`fa1b`
Netlist entry	`Y`
Typ	Component
Bitmap file	fa1b
Eigenschaften	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
TR	6	nein	transfer function high scaling factor
Delay	1 ns	nein	output delay (s)

2Bit Fulladder¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	2Bit FullAdder
Beschreibung	2bit full adder verilog device
Schematic entry	`fa2b`
Netlist entry	`Y`
Typ	Component
Bitmap file	fa2b
Eigenschaften	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
TR	6	nein	transfer function high scaling factor
Delay	1 ns	nein	output delay (s)

Rs-Flipflop¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	RS-Speicherglied
Beschreibung	RS-Speicherglied
Schematic entry	`RSFF`
Netlist entry	`Y`
Typ	DigitalComponent
Bitmap file	rsflipflop
Eigenschaften	1
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
t	0	nein	Verzögerungszeit

D-Flipflop¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	D-Speicherglied
Beschreibung	D-Speicherglied mit asynchronem Reseteingang
Schematic entry	`DFF`
Netlist entry	`Y`
Typ	DigitalComponent
Bitmap file	dflipflop
Eigenschaften	1
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
t	0	nein	Verzögerungszeit

D-Flipflop W/ Sr¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	D-FlipFlop w/ SR
Beschreibung	D flip flop with set and reset verilog device
Schematic entry	`dff_SR`
Netlist entry	`Y`
Typ	Component
Bitmap file	dff_SR
Eigenschaften	3
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
TR_H	6	nein	cross coupled gate transfer function high scaling factor
TR_L	5	nein	cross coupled gate transfer function low scaling factor
Delay	1 ns	nein	cross coupled gate delay (s)

Jk-Flipflop¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	JK-Speicherglied
Beschreibung	JK-Speicherglied mit asynchronen Set- und Reseteingängen
Schematic entry	`JKFF`
Netlist entry	`Y`
Typ	DigitalComponent
Bitmap file	jkflipflop
Eigenschaften	1
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
t	0	nein	Verzögerungszeit

Jk-Flipflop W/ Sr¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	JK-FlipFlop w/ SR
Beschreibung	jk flip flop with set and reset verilog device
Schematic entry	`jkff_SR`
Netlist entry	`Y`
Typ	Component
Bitmap file	jkff_SR
Eigenschaften	3
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
TR_H	6	nein	cross coupled gate transfer function high scaling factor
TR_L	5	nein	cross coupled gate transfer function low scaling factor
Delay	1 ns	nein	cross coupled gate delay (s)

T-Flipflop W/ Sr¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	T-FlipFlop w/ SR
Beschreibung	T flip flop with set and reset verilog device
Schematic entry	`tff_SR`
Netlist entry	`Y`
Typ	Component
Bitmap file	tff_SR
Eigenschaften	3
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
TR_H	6	nein	cross coupled gate transfer function high scaling factor
TR_L	5	nein	cross coupled gate transfer function low scaling factor
Delay	1 ns	nein	cross coupled gate delay (s)

Gated D-Latch¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Gated D-Latch
Beschreibung	gated D latch verilog device
Schematic entry	`gatedDlatch`
Netlist entry	`Y`
Typ	Component
Bitmap file	gatedDlatch
Eigenschaften	3
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
TR_H	6	nein	cross coupled gate transfer function high scaling factor
TR_L	5	nein	cross coupled gate transfer function low scaling factor
Delay	1 ns	nein	cross coupled gate delay (s)

Logic 0¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Logic 0
Beschreibung	logic 0 verilog device
Schematic entry	`logic_0`
Netlist entry	`S`
Typ	Component
Bitmap file	logic_0
Eigenschaften	1
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
LEVEL	0	nein	logic 0 voltage level (V)

Logic 1¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Logic 1
Beschreibung	logic 1 verilog device
Schematic entry	`logic_1`
Netlist entry	`S`
Typ	Component
Bitmap file	logic_1
Eigenschaften	1
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
LEVEL	1	nein	logic 1 voltage level (V)

2Bit Pattern¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	2Bit Pattern
Beschreibung	2bit pattern generator verilog device
Schematic entry	`pad2bit`
Netlist entry	`Y`
Typ	Component
Bitmap file	pad2bit
Eigenschaften	1
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Number	0	nein	pad output value

3Bit Pattern¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	3Bit Pattern
Beschreibung	3bit pattern generator verilog device
Schematic entry	`pad3bit`
Netlist entry	`Y`
Typ	Component
Bitmap file	pad3bit
Eigenschaften	1
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Number	0	nein	pad output value

4Bit Pattern¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	4Bit Pattern
Beschreibung	4bit pattern generator verilog device
Schematic entry	`pad4bit`
Netlist entry	`Y`
Typ	Component
Bitmap file	pad4bit
Eigenschaften	1
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Number	0	nein	pad output value

A2D Level Shifter¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	A2D Level Shifter
Beschreibung	data voltage level shifter (analogue to digital) verilog device
Schematic entry	`DLS_nto1`
Netlist entry	`Y`
Typ	AnalogComponent
Bitmap file	DLS_nto1
Eigenschaften	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
LEVEL	5 V	nein	voltage level (V)
Delay	1 ns	nein	time delay (s)

D2A Level Shifter¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	D2A Level Shifter
Beschreibung	data voltage level shifter (digital to analogue) verilog device
Schematic entry	`DLS_1ton`
Netlist entry	`Y`
Typ	AnalogComponent
Bitmap file	DLS_1ton
Eigenschaften	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
LEVEL	5 V	nein	voltage level
Delay	1 ns	nein	time delay (s)

4Bit Bin2Grey¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	4Bit Bin2Grey
Beschreibung	4bit binary to grey converter verilog device
Schematic entry	`binarytogrey4bit`
Netlist entry	`Y`
Typ	Component
Bitmap file	binarytogrey4bit
Eigenschaften	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
TR	6	nein	transfer function scaling factor
Delay	1 ns	nein	output delay (s)

4Bit Grey2Bin¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	4Bit Grey2Bin
Beschreibung	4bit grey to binary converter verilog device
Schematic entry	`greytobinary4bit`
Netlist entry	`Y`
Typ	Component
Bitmap file	greytobinary4bit
Eigenschaften	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
TR	6	nein	transfer function scaling factor
Delay	1 ns	nein	output delay (s)

1Bit Comparator¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	1Bit Comparator
Beschreibung	1bit comparator verilog device
Schematic entry	`comp_1bit`
Netlist entry	`Y`
Typ	Component
Bitmap file	comp_1bit
Eigenschaften	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
TR	6	nein	transfer function high scaling factor
Delay	1 ns	nein	output delay (s)

2Bit Comparator¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	2Bit Comparator
Beschreibung	2bit comparator verilog device
Schematic entry	`comp_2bit`
Netlist entry	`Y`
Typ	Component
Bitmap file	comp_2bit
Eigenschaften	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
TR	6	nein	transfer function high scaling factor
Delay	1 ns	nein	output delay (s)

4Bit Comparator¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	4Bit Comparator
Beschreibung	4bit comparator verilog device
Schematic entry	`comp_4bit`
Netlist entry	`Y`
Typ	Component
Bitmap file	comp_4bit
Eigenschaften	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
TR	6	nein	transfer function high scaling factor
Delay	1 ns	nein	output delay (s)

4Bit Hpri-Bin¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	4Bit HPRI-Bin
Beschreibung	4bit highest priority encoder (binary form) verilog device
Schematic entry	`hpribin4bit`
Netlist entry	`Y`
Typ	Component
Bitmap file	hpribin4bit
Eigenschaften	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
TR	6	nein	transfer function scaling factor
Delay	1 ns	nein	output delay (s)

Vhdl File¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	VHDL file
Beschreibung	VHDL file
Schematic entry	`VHDL`
Netlist entry	`X`
Typ	DigitalComponent
Bitmap file	vhdlfile
Eigenschaften	1
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Datei	sub.vhdl	nein	Name of VHDL file

Verilog File¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Verilog file
Beschreibung	Verilog file
Schematic entry	`Verilog`
Netlist entry	`X`
Typ	DigitalComponent
Bitmap file	vhdlfile
Eigenschaften	1
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Datei	sub.v	nein	Name of Verilog file

Digital Simulation¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Digitalsimulation
Beschreibung	Digitalsimulation
Schematic entry	`.Digi`
Netlist entry	`Digi`
Typ	DigitalComponent
Bitmap file	digi
Eigenschaften	3
Category	digital components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Typ	TruthTable	ja	type of simulation [TruthTable, TimeList]
time	10 ns	nein	Zeitdauer der TimeList Simulation
Model	VHDL	nein	netlist format [VHDL, Verilog]

File Components¶

Spice Netlist¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	SPICE Netzliste
Beschreibung	SPICE Netzlistendatei
Schematic entry	`SPICE`
Netlist entry	`X`
Typ	AnalogComponent
Bitmap file	spicefile
Eigenschaften	4
Category	file components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Datei		ja	x
Ports		nein	x
Sim	ja	nein	x
Preprocessor	none	nein	x

1-Port S Parameter File¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	1-Tor S-Parameter Datei
Beschreibung	S-Parameter Datei
Schematic entry	`SPfile`
Netlist entry	`X`
Typ	AnalogComponent
Bitmap file	spfile1
Eigenschaften	5
Category	file components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Datei	test.s1p	ja	Name der S-Parameter Datei
Daten	rectangular	nein	data type [rectangular, polar]
Interpolator	linear	nein	interpolation type [linear, cubic]
duringDC	open	nein	representation during DC analysis [open, short, shortall, unspecified]
Ports	1	nein	Anzahl der Tore

2-Port S Parameter File¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	2-Tor S-Parameter Datei
Beschreibung	S-Parameter Datei
Schematic entry	`SPfile`
Netlist entry	`X`
Typ	AnalogComponent
Bitmap file	spfile2
Eigenschaften	5
Category	file components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Datei	test.s2p	ja	Name der S-Parameter Datei
Daten	rectangular	nein	data type [rectangular, polar]
Interpolator	linear	nein	interpolation type [linear, cubic]
duringDC	open	nein	representation during DC analysis [open, short, shortall, unspecified]
Ports	2	nein	Anzahl der Tore

N-Port S Parameter File¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	n-Tor S-Parameter Datei
Beschreibung	S-Parameter Datei
Schematic entry	`SPfile`
Netlist entry	`X`
Typ	AnalogComponent
Bitmap file	spfile3
Eigenschaften	5
Category	file components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Datei	test.s3p	ja	Name der S-Parameter Datei
Daten	rectangular	nein	data type [rectangular, polar]
Interpolator	linear	nein	interpolation type [linear, cubic]
duringDC	open	nein	representation during DC analysis [open, short, shortall, unspecified]
Ports	3	nein	Anzahl der Tore

Schaltkreis¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Schaltkreis
Beschreibung	Teilschaltung
Schematic entry	`Sub`
Netlist entry	`SUB`
Typ	Component
Bitmap file	Teilschaltung
Eigenschaften	1
Category	file components

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Datei		nein	Name der Qucs Schaltplandatei

Simulations¶

Dc Simulation¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	DC-Simulation
Beschreibung	DC-Simulation
Schematic entry	`.DC`
Netlist entry	`DC`
Typ	AnalogComponent
Bitmap file	dc
Eigenschaften	9
Category	simulations

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Temp	26.85	nein	Simulationstemperatur in °C
reltol	0.001	nein	relative Toleranz für Konvergenz
abstol	1 pA	nein	absolute Toleranz für Ströme
vntol	1 uV	nein	absolute Toleranz für Spannungen
saveOPs	nein	nein	put operating points into dataset [yes, no]
MaxIter	150	nein	maximale Anzahl der Iterationen
saveAll	nein	nein	save subcircuit nodes into dataset [yes, no]
convHelper	none	nein	preferred convergence algorithm [none, gMinStepping, SteepestDescent, LineSearch, Attenuation, SourceStepping]
Solver	CroutLU	nein	method for solving the circuit matrix [CroutLU, DoolittleLU, HouseholderQR, HouseholderLQ, GolubSVD]

Transient Simulation¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Transientsimulation
Beschreibung	Transientsimulation
Schematic entry	`.TR`
Netlist entry	`TR`
Typ	AnalogComponent
Bitmap file	tran
Eigenschaften	20
Category	simulations

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Typ	lin	ja	sweep type [lin, log, list, const]
Start	0	ja	Startzeit in Sekunden
Stop	1 ms	ja	Stopzeit in Sekunden
Points	11	nein	Anzahl der Simulationszeitschritte
IntegrationMethod	Trapezoidal	nein	integration method [Euler, Trapezoidal, Gear, AdamsMoulton]
Order	2	nein	order of integration method (1-6)
InitialStep	1 ns	nein	Anfangsschrittweite in Sekunden
MinStep	1e-16	nein	minimale Schrittweite in Sekunden
MaxIter	150	nein	maximale Anzahl der Iterationen
reltol	0.001	nein	relative Toleranz für Konvergenz
abstol	1 pA	nein	absolute Toleranz für Ströme
vntol	1 uV	nein	absolute Toleranz für Spannungen
Temp	26.85	nein	Simulationstemperatur in °C
LTEreltol	1e-3	nein	relative Toleranz des lokalen Abbruchfehlers
LTEabstol	1e-6	nein	absolute Toleranz des lokalen Abbruchfehlers
LTEfactor	1	nein	Faktor für die Überbewertung des lokalen Abbruchfehlers
Solver	CroutLU	nein	method for solving the circuit matrix [CroutLU, DoolittleLU, HouseholderQR, HouseholderLQ, GolubSVD]
relaxTSR	nein	nein	relax time step raster [no, yes]
initialDC	ja	nein	perform an initial DC analysis [yes, no]
MaxStep	0	nein	maximum step size in seconds

Ac Simulation¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	AC-Simulation
Beschreibung	AC-Simulation
Schematic entry	`.AC`
Netlist entry	`AC`
Typ	AnalogComponent
Bitmap file	ac
Eigenschaften	5
Category	simulations

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Typ	lin	ja	sweep type [lin, log, list, const]
Start	1 GHz	ja	Startfrequenz in Hertz
Stop	10 GHz	ja	Stopfrequenz in Hertz
Points	19	ja	Anzahl der Simulationsschritte
Noise	nein	nein	calculate noise voltages [yes, no]

S-Parameter Simulation¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	S-Parameter Simulation
Beschreibung	S-Parameter Simulation
Schematic entry	`.SP`
Netlist entry	`SP`
Typ	AnalogComponent
Bitmap file	sparameter
Eigenschaften	9
Category	simulations

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Typ	lin	ja	sweep type [lin, log, list, const]
Start	1 GHz	ja	Startfrequenz in Hertz
Stop	10 GHz	ja	Stopfrequenz in Hertz
Points	19	ja	Anzahl der Simulationsschritte
Noise	nein	nein	calculate noise parameters [yes, no]
NoiseIP	1	nein	Eingangstor für die Rauschzahl
NoiseOP	2	nein	Ausgangstor für die Rauschzahl
saveCVs	nein	nein	put characteristic values into dataset [yes, no]
saveAll	nein	nein	save subcircuit characteristic values into dataset [yes, no]

Harmonic Balance¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Harmonic balance
Beschreibung	Harmonic balance simulation
Schematic entry	`.HB`
Netlist entry	`HB`
Typ	AnalogComponent
Bitmap file	hb
Eigenschaften	6
Category	simulations

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
f	1 GHz	nein	Frequenz in Hertz
n	4	ja	Anzahl der Harmonischen
iabstol	1 pA	nein	absolute Toleranz für Ströme
vabstol	1 uV	nein	absolute Toleranz für Spannungen
reltol	0.001	nein	relative Toleranz für Konvergenz
MaxIter	150	nein	maximale Anzahl der Iterationen

Parameter Sweep¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Parameterdurchlauf
Beschreibung	Parameterdurchlauf
Schematic entry	`.SW`
Netlist entry	`SW`
Typ	AnalogComponent
Bitmap file	sweep
Eigenschaften	6
Category	simulations

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Sim		ja	Simulation für den Parameterdurchlauf
Typ	lin	ja	sweep type [lin, log, list, const]
Param	R1	ja	Durchlaufvariable
Start	5 Ohm	ja	Startwert des Durchlaufs
Stop	50 Ohm	ja	Stopwert des Durchlaufs
Points	20	ja	Anzahl der Simulationsschritte

Digital Simulation¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	Digitalsimulation
Beschreibung	Digitalsimulation
Schematic entry	`.Digi`
Netlist entry	`Digi`
Typ	DigitalComponent
Bitmap file	digi
Eigenschaften	3
Category	simulations

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Typ	TruthTable	ja	type of simulation [TruthTable, TimeList]
time	10 ns	nein	Zeitdauer der TimeList Simulation
Model	VHDL	nein	netlist format [VHDL, Verilog]

Optimization¶

Symbol¶

Component Data¶

Component Data
Field	Wert
Caption	optimization
Beschreibung	Optimization
Schematic entry	`.Opt`
Netlist entry	`Opt`
Typ	AnalogComponent
Bitmap file	optimize
Eigenschaften	2
Category	simulations

Component Parameters¶

Default Parameters
Name	Wert	Display	Beschreibung
Sim		nein
DE	3\|50\|2\|20\|0.85\|1\|3\|1e-6\|10\|100	nein