Component Reference¶
Lumped Components¶
Resistencia¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Resistencia |
Descripción |
resistencia |
| Schematic entry | R |
| Netlist entry | R |
Tipo |
AnalogComponent |
| Bitmap file | resistencia |
Propiedades |
6 |
| Category | lumped components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| R | 50 Ohm | Sí |
resistencia en Ohmios |
| Temp | 26.85 | no | temperatura de simulación en grados Celsius |
| Tc1 | 0.0 | no | coeficiente de temperatura de primer orden |
| Tc2 | 0.0 | no | coeficiente de temperatura de segundo orden |
| Tnom | 26.85 | no | temperatura a la que se extraen los parámetros |
| Symbol | european | no | schematic symbol [european, US] |
Resistor Us¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Resistencia US |
Descripción |
resistencia |
| Schematic entry | R |
| Netlist entry | R |
Tipo |
AnalogComponent |
| Bitmap file | resistor_us |
Propiedades |
6 |
| Category | lumped components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| R | 50 Ohm | Sí |
resistencia en Ohmios |
| Temp | 26.85 | no | temperatura de simulación en grados Celsius |
| Tc1 | 0.0 | no | coeficiente de temperatura de primer orden |
| Tc2 | 0.0 | no | coeficiente de temperatura de segundo orden |
| Tnom | 26.85 | no | temperatura a la que se extraen los parámetros |
| Symbol | US | no | schematic symbol [european, US] |
Condensador¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Condensador |
Descripción |
condensador |
| Schematic entry | C |
| Netlist entry | C |
Tipo |
AnalogComponent |
| Bitmap file | condensador |
Propiedades |
3 |
| Category | lumped components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| C | 1 pF | Sí |
capacidad en Faradios |
| V | no | tensión inicial para la simulación de transitorio |
|
| Symbol | neutral | no | schematic symbol [neutral, polar] |
Bobina¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Bobina |
Descripción |
bobina |
| Schematic entry | L |
| Netlist entry | L |
Tipo |
AnalogComponent |
| Bitmap file | bobina |
Propiedades |
2 |
| Category | lumped components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| L | 1 nH | Sí |
inductancia en Henrios |
| I | no | initial current for transient simulation |
Tierra¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Tierra |
Descripción |
tierra (potencial de referencia) |
| Schematic entry | GND |
| Netlist entry | |
Tipo |
Componente |
| Bitmap file | gnd |
Propiedades |
0 |
| Category | lumped components |
Conexión de Subcircuito¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Conexión de Subcircuito |
Descripción |
conexión de un subcircuito |
| Schematic entry | Port |
| Netlist entry | P |
Tipo |
Componente |
| Bitmap file | subport |
Propiedades |
2 |
| Category | lumped components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Num | 1 | Sí |
número de la conexión dentro del subcircuito |
Tipo |
analog | no | type of the port (for digital simulation only) [analog, in, out, inout] |
Transformador¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Transformador |
Descripción |
transformador ideal |
| Schematic entry | Tr |
| Netlist entry | Tr |
Tipo |
AnalogComponent |
| Bitmap file | transformer |
Propiedades |
1 |
| Category | lumped components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| T | 1 | Sí |
coeficiente de transformación de tensión |
Symmetric Transformer¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Transformador simétrico |
Descripción |
transformador ideal simétrico |
| Schematic entry | sTr |
| Netlist entry | Tr |
Tipo |
AnalogComponent |
| Bitmap file | symtrans |
Propiedades |
2 |
| Category | lumped components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| T1 | 1 | Sí |
coeficiente de transformación de tensión de la bobina 1 |
| T2 | 1 | Sí |
coeficiente de transformación de tensión de la bobina 2 |
Dc Block¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Bloque dc |
Descripción |
bloque dc |
| Schematic entry | DCBlock |
| Netlist entry | C |
Tipo |
AnalogComponent |
| Bitmap file | dcblock |
Propiedades |
1 |
| Category | lumped components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| C | 1 uF | no | para simulación transitoria: capacidad en Faradios |
Dc Feed¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Alimentación dc |
Descripción |
alimentación dc |
| Schematic entry | DCFeed |
| Netlist entry | L |
Tipo |
AnalogComponent |
| Bitmap file | dcfeed |
Propiedades |
1 |
| Category | lumped components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| L | 1 uH | no | para simulación transitoria: inductancia en Henrios |
Polarización T¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Polarización T |
Descripción |
polarización t |
| Schematic entry | BiasT |
| Netlist entry | X |
Tipo |
AnalogComponent |
| Bitmap file | biast |
Propiedades |
2 |
| Category | lumped components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| L | 1 uH | no | para simulación transitoria: inductancia en Henrios |
| C | 1 uF | no | para simulación transitoria: capacidad en Faradios |
Atenuador¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Atenuador |
Descripción |
atenuador |
| Schematic entry | Attenuator |
| Netlist entry | X |
Tipo |
AnalogComponent |
| Bitmap file | atenuador |
Propiedades |
3 |
| Category | lumped components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| L | 10 dB | Sí |
atenuación de potencia |
| Zref | 50 Ohm | no | impedancia de referencia |
| Temp | 26.85 | no | temperatura de simulación en grados Celsius |
Amplificador¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Amplificador |
Descripción |
amplificador ideal |
| Schematic entry | Amp |
| Netlist entry | X |
Tipo |
AnalogComponent |
| Bitmap file | amplifier |
Propiedades |
4 |
| Category | lumped components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| G | 10 | Sí |
ganancia de tensión |
| Z1 | 50 Ohm | no | impedancia de referencia del conector de entrada |
| Z2 | 50 Ohm | no | impedancia de referencia del conector de salida |
| NF | 0 dB | no | noise figure |
Aislante¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Aislante |
Descripción |
aislante |
| Schematic entry | Isolator |
| Netlist entry | X |
Tipo |
AnalogComponent |
| Bitmap file | aislante |
Propiedades |
3 |
| Category | lumped components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Z1 | 50 Ohm | no | impedancia de referencia del conector de entrada |
| Z2 | 50 Ohm | no | impedancia de referencia del conector de salida |
| Temp | 26.85 | no | temperatura de simulación en grados Celsius |
Circulador¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Circulador |
Descripción |
circulador |
| Schematic entry | Circulator |
| Netlist entry | X |
Tipo |
AnalogComponent |
| Bitmap file | circulador |
Propiedades |
3 |
| Category | lumped components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Z1 | 50 Ohm | no | impedancia de referencia de la conexión 1 |
| Z2 | 50 Ohm | no | impedancia de referencia de la conexión 2 |
| Z3 | 50 Ohm | no | impedancia de referencia de la conexión 3 |
Girador¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Girador |
Descripción |
girador (inversor de impendancia) |
| Schematic entry | Gyrator |
| Netlist entry | X |
Tipo |
AnalogComponent |
| Bitmap file | gyrator |
Propiedades |
2 |
| Category | lumped components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| R | 50 Ohm | Sí |
porcentaje de girador |
| Zref | 50 Ohm | no | impedancia de referencia |
Desplazador de Fase¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Desplazador de Fase |
Descripción |
desplazador de fase |
| Schematic entry | PShift |
| Netlist entry | X |
Tipo |
AnalogComponent |
| Bitmap file | pshifter |
Propiedades |
2 |
| Category | lumped components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| phi | 90 | Sí |
desplazamiento de fase en grados |
| Zref | 50 Ohm | no | impedancia de referencia |
Acoplador¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Acoplador |
Descripción |
acoplador ideal |
| Schematic entry | Coupler |
| Netlist entry | X |
Tipo |
AnalogComponent |
| Bitmap file | coupler |
Propiedades |
3 |
| Category | lumped components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| k | 0.7071 | Sí |
factor de acoplamiento |
| phi | 180 | Sí |
desplazamiento de fase en grados |
| Z | 50 Ohm | no | impedancia de referencia |
Hybrid¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Hybrid |
Descripción |
hybrid (unsymmetrical 3dB coupler) |
| Schematic entry | Hybrid |
| Netlist entry | X |
Tipo |
AnalogComponent |
| Bitmap file | hybrid |
Propiedades |
2 |
| Category | lumped components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| phi | 90 | Sí |
desplazamiento de fase en grados |
| Zref | 50 Ohm | no | impedancia de referencia |
Sonda de Corriente¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Sonda de Corriente |
Descripción |
sonda de corriente |
| Schematic entry | IProbe |
| Netlist entry | Pr |
Tipo |
AnalogComponent |
| Bitmap file | iprobe |
Propiedades |
0 |
| Category | lumped components |
Sonda de Tensión¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Sonda de Tensión |
Descripción |
sonda de tensión |
| Schematic entry | VProbe |
| Netlist entry | Pr |
Tipo |
AnalogComponent |
| Bitmap file | vprobe |
Propiedades |
0 |
| Category | lumped components |
Bobinas acopladas¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Bobinas acopladas |
Descripción |
dos bobinas acopladas |
| Schematic entry | MUT |
| Netlist entry | Tr |
Tipo |
AnalogComponent |
| Bitmap file | mutual |
Propiedades |
3 |
| Category | lumped components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| L1 | 1 mH | no | inductancia de la bobina 1 |
| L2 | 1 mH | no | inductancia de la bobina 2 |
| k | 0.9 | no | Inductancia mutua entre la bobina 1 y 2 |
3 Bobinas Acopladas¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | 3 Bobinas Acopladas |
Descripción |
tres bobinas mutuas |
| Schematic entry | MUT2 |
| Netlist entry | Tr |
Tipo |
AnalogComponent |
| Bitmap file | mutual2 |
Propiedades |
6 |
| Category | lumped components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| L1 | 1 mH | no | inductancia de la bobina 1 |
| L2 | 1 mH | no | inductancia de la bobina 2 |
| L3 | 1 mH | no | inductancia de la bobina 3 |
| k12 | 0.9 | no | Inductancia mutua entre la bobina 1 y 2 |
| k13 | 0.9 | no | Inductancia mutua entre la bobina 1 y 3 |
| k23 | 0.9 | no | Inductancia mutua entre la bobina 2 y 3 |
N Mutual Inductors¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | N Mutual Inductors |
Descripción |
several mutual inductors |
| Schematic entry | MUTX |
| Netlist entry | Tr |
Tipo |
AnalogComponent |
| Bitmap file | mutualx |
Propiedades |
11 |
| Category | lumped components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| coils | 4 | no | number of mutual inductances |
| L1 | 1 mH | no | inductancia de la bobina 1 |
| L2 | 1 mH | no | inductancia de la bobina 2 |
| L3 | 1 mH | no | inductancia de la bobina 3 |
| L4 | 1 mH | no | inductance of coil 4 |
| k12 | 0.9 | no | coupling factor between coil 1 and coil 2 |
| k13 | 0.9 | no | coupling factor between coil 1 and coil 3 |
| k14 | 0.9 | no | coupling factor between coil 1 and coil 4 |
| k23 | 0.9 | no | coupling factor between coil 2 and coil 3 |
| k24 | 0.9 | no | coupling factor between coil 2 and coil 4 |
| k34 | 0.9 | no | coupling factor between coil 3 and coil 4 |
Conmutador¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Conmutador |
Descripción |
conmutador (controlado por tiempo) |
| Schematic entry | Switch |
| Netlist entry | S |
Tipo |
AnalogComponent |
| Bitmap file | switch |
Propiedades |
6 |
| Category | lumped components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| init | off | no | initial state [on, off] |
| time | 1 ms | no | time when state changes (semicolon separated list possible, even numbered lists are repeated) |
| Ron | 0 | no | resistencia del estado “on” en ohmios |
| Roff | 1e12 | no | resistencia del estado “off” en ohmios |
| Temp | 26.85 | no | temperatura de simulación en grados Celsius |
| MaxDuration | 1e-6 | no | Max possible switch transition time (transition time 1/100 smallest value in ‘time’, or this number) |
Relevo¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Relevo |
Descripción |
relevo |
| Schematic entry | Relais |
| Netlist entry | S |
Tipo |
AnalogComponent |
| Bitmap file | relais |
Propiedades |
5 |
| Category | lumped components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Vt | 0.5 V | no | límite de tensión en Voltios |
| Vh | 0.1 V | no | hísteresis de tensión en Voltios |
| Ron | 0 | no | resistencia del estado “on” en Ohmios |
| Roff | 1e12 | no | resistencia del estado “off” en Ohmios |
| Temp | 26.85 | no | temperatura de simulación en grados Celsius |
Equation Defined Rf Device¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Ecuación definada de componente RF |
Descripción |
ecuación definada de componente RF |
| Schematic entry | RFEDD |
| Netlist entry | RF |
Tipo |
AnalogComponent |
| Bitmap file | rfedd |
Propiedades |
7 |
| Category | lumped components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
Tipo |
Y | no | type of parameters [Y, Z, S] |
| Ports | 2 | no | número de conexiones |
| duringDC | open | no | representation during DC analysis [open, short, unspecified, zerofrequency] |
| P11 | 0 | no | parameter equation 11 |
| P12 | 0 | no | parameter equation 12 |
| P21 | 0 | no | parameter equation 21 |
| P22 | 0 | no | parameter equation 22 |
Equation Defined 2-Port Rf Device¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Ecuación definada de componente 2-port RF |
Descripción |
ecuación definada de componente 2-port RF |
| Schematic entry | RFEDD2P |
| Netlist entry | RF |
Tipo |
AnalogComponent |
| Bitmap file | rfedd |
Propiedades |
6 |
| Category | lumped components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
Tipo |
Y | no | type of parameters [Y, Z, S, H, G, A, T] |
| duringDC | open | no | representation during DC analysis [open, short, unspecified, zerofrequency] |
| P11 | 0 | no | parameter equation 11 |
| P12 | 0 | no | parameter equation 12 |
| P21 | 0 | no | parameter equation 21 |
| P22 | 0 | no | parameter equation 22 |
Sources¶
Dc Voltage Source¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Fuente de Tensión dc |
Descripción |
fuente de tensión dc ideal |
| Schematic entry | Vdc |
| Netlist entry | V |
Tipo |
AnalogComponent |
| Bitmap file | dc_voltage |
Propiedades |
1 |
| Category | sources |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| U | 1 V | Sí |
tensión en Voltios |
Dc Current Source¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Fuente de intensidad dc |
Descripción |
fuente de intensidad dc ideal |
| Schematic entry | Idc |
| Netlist entry | I |
Tipo |
AnalogComponent |
| Bitmap file | dc_current |
Propiedades |
1 |
| Category | sources |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| I | 1 mA | Sí |
intensidad en Amperios |
Ac Voltage Source¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Fuente de tensión ac |
Descripción |
fuente de tensión ac ideal |
| Schematic entry | Vac |
| Netlist entry | V |
Tipo |
AnalogComponent |
| Bitmap file | ac_voltage |
Propiedades |
4 |
| Category | sources |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| U | 1 V | Sí |
tensión de pico en Voltios |
| f | 1 GHz | no | frecuencia en Hertzios |
| Phase | 0 | no | fase inicial en grados |
| Theta | 0 | no | Factor de damping (sólo para simulación de transitorio) |
Ac Current Source¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Fuente de intensidad ac |
Descripción |
fuente de intensidad ac ideal |
| Schematic entry | Iac |
| Netlist entry | I |
Tipo |
AnalogComponent |
| Bitmap file | ac_current |
Propiedades |
4 |
| Category | sources |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| I | 1 mA | Sí |
corriente de pico en Amperios |
| f | 1 GHz | no | frecuencia en Hertzios |
| Phase | 0 | no | fase inicial en grados |
| Theta | 0 | no | Factor de damping (sólo para simulación de transitorio) |
Fuente de Alimentación¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Fuente de Alimentación |
Descripción |
fuente de alimentación ac |
| Schematic entry | Pac |
| Netlist entry | P |
Tipo |
AnalogComponent |
| Bitmap file | source |
Propiedades |
5 |
| Category | sources |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Num | 1 | Sí |
número de la conexión |
| Z | 50 Ohm | Sí |
impedancia de la conexión |
| P | 0 dBm | no | (disponible) Potencia AC en Watios |
| f | 1 GHz | no | frecuencia en Hertzios |
| Temp | 26.85 | no | temperatura de simulación en grados Celsius |
Fuente de Tensión de Ruido¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Fuente de Tensión de Ruido |
Descripción |
fuente de tensión de ruido |
| Schematic entry | Vnoise |
| Netlist entry | V |
Tipo |
AnalogComponent |
| Bitmap file | noise_volt |
Propiedades |
4 |
| Category | sources |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| u | 1e-6 | Sí |
densidad espectral de potencia en V²/Hz |
| e | 0 | no | exponente de frecuencia |
| c | 1 | no | coeficiente de frecuencia |
| a | 0 | no | termino sumatorio de frecuencia |
Fuente de Intensidad de Ruido¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Fuente de Intensidad de Ruido |
Descripción |
fuente de intensidad de ruido |
| Schematic entry | Inoise |
| Netlist entry | I |
Tipo |
AnalogComponent |
| Bitmap file | noise_current |
Propiedades |
4 |
| Category | sources |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| i | 1e-6 | Sí |
densidad de potencia espectral actual en A^2/Hz |
| e | 0 | no | exponente de frecuencia |
| c | 1 | no | coeficiente de frecuencia |
| a | 0 | no | termino sumatorio de frecuencia |
Fuente de Corriente Controlada por Tensión¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Fuente de Corriente Controlada por Tensión |
Descripción |
Fuente de corriente controlada por tensión |
| Schematic entry | VCCS |
| Netlist entry | SRC |
Tipo |
AnalogComponent |
| Bitmap file | vccs |
Propiedades |
2 |
| Category | sources |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| G | 1 S | Sí |
transconductancia directa |
| T | 0 | no | tiempo de retardo |
Fuene de Intensidad Controlada por Intensidad¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Fuene de Intensidad Controlada por Intensidad |
Descripción |
fuente de intensidad controlada por intensidad |
| Schematic entry | CCCS |
| Netlist entry | SRC |
Tipo |
AnalogComponent |
| Bitmap file | cccs |
Propiedades |
2 |
| Category | sources |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| G | 1 | Sí |
factor de transferencia directa |
| T | 0 | no | tiempo de retardo |
Fuente de Tensión Controlada por Tensión¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Fuente de Tensión Controlada por Tensión |
Descripción |
fuente de tensión controlada por tensión |
| Schematic entry | VCVS |
| Netlist entry | SRC |
Tipo |
AnalogComponent |
| Bitmap file | vcvs |
Propiedades |
2 |
| Category | sources |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| G | 1 | Sí |
factor de transferencia directa |
| T | 0 | no | tiempo de retardo |
Fuente de Tensión Controlada por Intensidad¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Fuente de Tensión Controlada por Intensidad |
Descripción |
fuente de tensión controlada por intensidad |
| Schematic entry | CCVS |
| Netlist entry | SRC |
Tipo |
AnalogComponent |
| Bitmap file | ccvs |
Propiedades |
2 |
| Category | sources |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| G | 1 Ohm | Sí |
factor de transferencia directa |
| T | 0 | no | tiempo de retardo |
Pulso de Tensión¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Pulso de Tensión |
Descripción |
fuente ideal de pulsos de tensión |
| Schematic entry | Vpulse |
| Netlist entry | V |
Tipo |
AnalogComponent |
| Bitmap file | vpulse |
Propiedades |
6 |
| Category | sources |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| U1 | 0 V | Sí |
tensión antes y después del pulso |
| U2 | 1 V | Sí |
tensión del pulso |
| T1 | 0 | Sí |
momento de inicio del pulso |
| T2 | 1 ms | Sí |
tiempo de fin del pulso |
| Tr | 1 ns | no | tiempo de ascenso del flanco de subida |
| Tf | 1 ns | no | tiempo de caida del flanco de bajada |
Pulso de Intensidad¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Pulso de Intensidad |
Descripción |
fuente ideal de pulsos de intensidad |
| Schematic entry | Ipulse |
| Netlist entry | I |
Tipo |
AnalogComponent |
| Bitmap file | ipulse |
Propiedades |
6 |
| Category | sources |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| I1 | 0 | Sí |
intensidad antes y después del pulso |
| I2 | 1 A | Sí |
intensidad del pulso |
| T1 | 0 | Sí |
momento de inicio del pulso |
| T2 | 1 ms | Sí |
tiempo de fin del pulso |
| Tr | 1 ns | no | tiempo de ascenso del flanco de subida |
| Tf | 1 ns | no | tiempo de caida del flanco de bajada |
Tensión Cuadrada¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Tensión Cuadrada |
Descripción |
fuente de tensión cuadrada ideal |
| Schematic entry | Vrect |
| Netlist entry | V |
Tipo |
AnalogComponent |
| Bitmap file | vrect |
Propiedades |
6 |
| Category | sources |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| U | 1 V | Sí |
tensión de la señal superior |
| TH | 1 ms | Sí |
duración de los pulsos superiores |
| TL | 1 ms | Sí |
duración de los pulsos inferiores |
| Tr | 1 ns | no | tiempo de ascenso del flanco de subida |
| Tf | 1 ns | no | tiempo de caida del flanco de bajada |
| Td | 0 ns | no | Retardo inicial |
Corriente Cuadrada¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Corriente Cuadrada |
Descripción |
fuente de corriente cuadrada ideal |
| Schematic entry | Irect |
| Netlist entry | I |
Tipo |
AnalogComponent |
| Bitmap file | irect |
Propiedades |
6 |
| Category | sources |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| I | 1 mA | Sí |
corriente en el pulso superior |
| TH | 1 ms | Sí |
duración de los pulsos superiores |
| TL | 1 ms | Sí |
duración de los pulsos inferiores |
| Tr | 1 ns | no | tiempo de ascenso del flanco de subida |
| Tf | 1 ns | no | tiempo de caida del flanco de bajada |
| Td | 0 ns | no | Retardo inicial |
Fuentes de Ruido correlacionadas¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Fuentes de Ruido correlacionadas |
Descripción |
fuentes de corriente correlacionadas |
| Schematic entry | IInoise |
| Netlist entry | SRC |
Tipo |
AnalogComponent |
| Bitmap file | noise_ii |
Propiedades |
6 |
| Category | sources |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| i1 | 1e-6 | Sí |
densidad espectral del generador de corriente 1 |
| i2 | 1e-6 | Sí |
densidad espectral del generador de corriente 2 |
| C | 0.5 | Sí |
coeficiente normalizado de correlación |
| e | 0 | no | exponente de frecuencia |
| c | 1 | no | coeficiente de frecuencia |
| a | 0 | no | termino sumatorio de frecuencia |
Fuentes de Ruido correlacionadas¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Fuentes de Ruido correlacionadas |
Descripción |
fuentes de corriente correlacionadas |
| Schematic entry | VVnoise |
| Netlist entry | SRC |
Tipo |
AnalogComponent |
| Bitmap file | noise_vv |
Propiedades |
6 |
| Category | sources |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| v1 | 1e-6 | Sí |
densidad espectral de la fuente de tensión 1 |
| v2 | 1e-6 | Sí |
densidad espectral de la fuente de tensión 2 |
| C | 0.5 | Sí |
coeficiente normalizado de correlación |
| e | 0 | no | exponente de frecuencia |
| c | 1 | no | coeficiente de frecuencia |
| a | 0 | no | termino sumatorio de frecuencia |
Fuentes de Ruido correlacionadas¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Fuentes de Ruido correlacionadas |
Descripción |
fuentes de corriente correlacionadas |
| Schematic entry | IVnoise |
| Netlist entry | SRC |
Tipo |
AnalogComponent |
| Bitmap file | noise_iv |
Propiedades |
6 |
| Category | sources |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| i1 | 1e-6 | Sí |
densidad espectral del generador de corriente 1 |
| v2 | 1e-6 | Sí |
densidad espectral de la fuente de tensión 2 |
| C | 0.5 | Sí |
coeficiente normalizado de correlación |
| e | 0 | no | exponente de frecuencia |
| c | 1 | no | coeficiente de frecuencia |
| a | 0 | no | termino sumatorio de frecuencia |
Am Modulated Source¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Fuente modulada AM |
Descripción |
fuente de tensión ac con modulador de amplitud |
| Schematic entry | AM_Mod |
| Netlist entry | V |
Tipo |
AnalogComponent |
| Bitmap file | am_mod |
Propiedades |
4 |
| Category | sources |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| U | 1 V | Sí |
tensión de pico en Voltios |
| f | 1 GHz | no | frecuencia en Hertzios |
| Phase | 0 | no | fase inicial en grados |
| m | 1.0 | no | nivel de modulación |
Pm Modulated Source¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Fuente modulada PM |
Descripción |
fuente de tensión ac con modulador de fase |
| Schematic entry | PM_Mod |
| Netlist entry | V |
Tipo |
AnalogComponent |
| Bitmap file | pm_mod |
Propiedades |
4 |
| Category | sources |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| U | 1 V | Sí |
tensión de pico en Voltios |
| f | 1 GHz | no | frecuencia en Hertzios |
| Phase | 0 | no | fase inicial en grados |
| M | 1.0 | no | índice de modulación |
Pulso de Corriente Exponencial¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Pulso de Corriente Exponencial |
Descripción |
fuente de corriente exponencial |
| Schematic entry | Iexp |
| Netlist entry | I |
Tipo |
AnalogComponent |
| Bitmap file | iexp |
Propiedades |
6 |
| Category | sources |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| I1 | 0 | Sí |
flanco de subida antes de la corriente |
| I2 | 1 A | Sí |
corriente máxima del pulso |
| T1 | 0 | Sí |
tiempo de inicio del flanco de subida exponencial |
| T2 | 1 ms | Sí |
comienzo de la caida exponencial |
| Tr | 1 ns | no | constante de tiempo del flanco de subida |
| Tf | 1 ns | no | constante de tiempo del flanco de bajada |
Pulso de Tensión Exponencial¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Pulso de Tensión Exponencial |
Descripción |
fuente de tensión exponencial |
| Schematic entry | Vexp |
| Netlist entry | V |
Tipo |
AnalogComponent |
| Bitmap file | vexp |
Propiedades |
6 |
| Category | sources |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| U1 | 0 V | Sí |
tensión antes del flanco de subida |
| U2 | 1 V | Sí |
máxima tensión del pulso |
| T1 | 0 | Sí |
tiempo de inicio del flanco de subida exponencial |
| T2 | 1 ms | Sí |
comienzo de la caida exponencial |
| Tr | 1 ns | no | tiempo de subida del flanco de subida |
| Tf | 1 ns | no | tiempo de caida del flanco de caída |
Fuente de Tensión Basada en un Archivo¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Fuente de Tensión Basada en un Archivo |
Descripción |
Fuente de tensión basada en un archivo |
| Schematic entry | Vfile |
| Netlist entry | V |
Tipo |
AnalogComponent |
| Bitmap file | vfile |
Propiedades |
5 |
| Category | sources |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| File | vfile.dat | Sí |
nombre del archivo de muestras |
| Interpolator | lineal |
no | interpolation type [hold, linear, cubic] |
| Repeat | no | no | repeat waveform [no, yes] |
| G | 1 | no | ganancia de tensión |
| T | 0 | no | tiempo de retardo |
Fuente de Corriente Basada en un Archivo¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Fuente de Corriente Basada en un Archivo |
Descripción |
fuente de corriente basada en un archivo |
| Schematic entry | Ifile |
| Netlist entry | I |
Tipo |
AnalogComponent |
| Bitmap file | ifile |
Propiedades |
5 |
| Category | sources |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| File | ifile.dat | Sí |
nombre del archivo de muestras |
| Interpolator | lineal |
no | interpolation type [hold, linear, cubic] |
| Repeat | no | no | repeat waveform [no, yes] |
| G | 1 | no | ganancia de corriente |
| T | 0 | no | tiempo de retardo |
Probes¶
Transmission Lines¶
Línea de Transmisión¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Línea de Transmisión |
Descripción |
línea de transmisión ideal |
| Schematic entry | TLIN |
| Netlist entry | Line |
Tipo |
AnalogComponent |
| Bitmap file | tline |
Propiedades |
4 |
| Category | transmission lines |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Z | 50 Ohm | Sí |
impedancia característica |
| L | 1 mm | Sí |
longitud eléctrica de la línea |
| Alpha | 0 dB | no | factor de atenuación por longitud en 1/m |
| Temp | 26.85 | no | temperatura de simulación en grados Celsius |
Línea de transmisión de 4 terminales¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Línea de transmisión de 4 terminales |
Descripción |
línea de transmisión de 4 terminales ideal |
| Schematic entry | TLIN4P |
| Netlist entry | Line |
Tipo |
AnalogComponent |
| Bitmap file | tline_4port |
Propiedades |
4 |
| Category | transmission lines |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Z | 50 Ohm | Sí |
impedancia característica |
| L | 1 mm | Sí |
longitud eléctrica de la línea |
| Alpha | 0 dB | no | factor de atenuación por longitud en 1/m |
| Temp | 26.85 | no | temperatura de simulación en grados Celsius |
Coupled Transmission Line¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Coupled Transmission Line |
Descripción |
coupled transmission lines |
| Schematic entry | CTLIN |
| Netlist entry | Line |
Tipo |
AnalogComponent |
| Bitmap file | ctline |
Propiedades |
8 |
| Category | transmission lines |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Ze | 50 Ohm | Sí |
characteristic impedance of even mode |
| Zo | 50 Ohm | Sí |
characteristic impedance of odd mode |
| L | 1 mm | Sí |
longitud eléctrica de la línea |
| Ere | 1 | no | relative dielectric constant of even mode |
| Ero | 1 | no | relative dielectric constant of odd mode |
| Ae | 0 dB | no | attenuation factor per length of even mode |
| Ao | 0 dB | no | attenuation factor per length of odd mode |
| Temp | 26.85 | no | temperatura de simulación en grados Celsius |
Par trenzado¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Par trenzado |
Descripción |
línea de transmisión par trenzado |
| Schematic entry | TWIST |
| Netlist entry | Line |
Tipo |
AnalogComponent |
| Bitmap file | twistedpair |
Propiedades |
9 |
| Category | transmission lines |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| d | 0.5 mm | Sí |
diámetro del conductor |
| D | 0.8 mm | Sí |
diámetro del cable (conductor y aislante) |
| L | 1.5 | Sí |
longitud física de la línea |
| T | 100 | no | trenzas por longitud en 1/m |
| er | 4 | no | constante dieléctrica del aislante |
| mur | 1 | no | permeabilidad relativa del conductor |
| rho | 0.022e-6 | no | resistencia específica del conductor |
| tand | 4e-4 | no | tangente de perdidas |
| Temp | 26.85 | no | temperatura de simulación en grados Celsius |
Línea coaxial¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Línea coaxial |
Descripción |
línea de transmisión coaxial |
| Schematic entry | COAX |
| Netlist entry | Line |
Tipo |
AnalogComponent |
| Bitmap file | coaxial |
Propiedades |
8 |
| Category | transmission lines |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| er | 2.29 | Sí |
permitividad relativa del dieléctrico |
| rho | 0.022e-6 | no | resistencia específica del conductor |
| mur | 1 | no | permeabilidad relativa del conductor |
| D | 2.95 mm | no | diámetro interior de la pantalla |
| d | 0.9 mm | no | diámetro del conductor interior |
| L | 1500 mm | Sí |
longitud mecánica de la línea |
| tand | 4e-4 | no | tangente de perdidas |
| Temp | 26.85 | no | temperatura de simulación en grados Celsius |
Guiaondas rectángular¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Guiaondas rectángular |
Descripción |
Guiaondas rectángular |
| Schematic entry | RECTLINE |
| Netlist entry | Line |
Tipo |
AnalogComponent |
| Bitmap file | rectline |
Propiedades |
9 |
| Category | transmission lines |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| a | 2.95 mm | Sí |
widest side |
| b | 0.9 mm | Sí |
shortest side |
| L | 1500 mm | Sí |
longitud mecánica de la línea |
| er | 1 | no | permitividad relativa del dieléctrico |
| mur | 1 | no | permeabilidad relativa del conductor |
| tand | 0 | no | tangente de perdidas |
| rho | 0.022e-6 | no | resistencia específica del conductor |
| Temp | 26.85 | no | temperatura de simulación en grados Celsius |
| Material | unspecified | no | material parameter for temperature model [unspecified, Copper, StainlessSteel, Gold] |
Rlcg Transmission Line¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | RLCG Transmission Line |
Descripción |
RLCG transmission line |
| Schematic entry | RLCG |
| Netlist entry | Line |
Tipo |
AnalogComponent |
| Bitmap file | rlcg |
Propiedades |
6 |
| Category | transmission lines |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| R | 0.0 | no | resistive load (Ohm/m) |
| L | 0.6e-6 | Sí |
inductive load (H/m) |
| C | 240e-12 | Sí |
capacitive load (F/m) |
| G | 0.0 | no | conductive load (S/m) |
Longitud |
1 mm | Sí |
longitud eléctrica de la línea |
| Temp | 26.85 | no | temperatura de simulación en grados Celsius |
Sustrato¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Sustrato |
Descripción |
definición de sustrato |
| Schematic entry | SUBST |
| Netlist entry | Subst |
Tipo |
AnalogComponent |
| Bitmap file | sustrato |
Propiedades |
6 |
| Category | transmission lines |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| er | 9.8 | Sí |
permitividad relativa |
| h | 1 mm | Sí |
grosor en metros |
| t | 35 um | Sí |
grosor de metalización |
| tand | 2e-4 | Sí |
tangente de perdidas |
| rho | 0.022e-6 | Sí |
resistencia específica del metal |
| D | 0.15e-6 | Sí |
rudeza eficaz del sustrato |
Línea Microstrip¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Línea Microstrip |
Descripción |
línea microstrip |
| Schematic entry | MLIN |
| Netlist entry | MS |
Tipo |
AnalogComponent |
| Bitmap file | msline |
Propiedades |
6 |
| Category | transmission lines |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Subst | Subst1 | Sí |
nombre de la definición del sustrato |
| W | 1 mm | Sí |
ancho de la línea |
| L | 10 mm | Sí |
longitud de la línea |
Modelo |
Hammerstad | no | quasi-static microstrip model [Hammerstad, Wheeler, Schneider] |
| DispModel | Kirschning | no | microstrip dispersion model [Kirschning, Kobayashi, Yamashita, Hammerstad, Getsinger, Schneider, Pramanick] |
| Temp | 26.85 | no | temperatura de simulación en grados Celsius |
Línea Microstrip Acoplada¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Línea Microstrip Acoplada |
Descripción |
línea microstrip acoplada |
| Schematic entry | MCOUPLED |
| Netlist entry | MS |
Tipo |
AnalogComponent |
| Bitmap file | mscoupled |
Propiedades |
7 |
| Category | transmission lines |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Subst | Subst1 | Sí |
nombre de la definición del sustrato |
| W | 1 mm | Sí |
ancho de la línea |
| L | 10 mm | Sí |
longitud de la línea |
| S | 1 mm | Sí |
espaciado entre las líneas |
Modelo |
Kirschning | no | microstrip model [Kirschning, Hammerstad] |
| DispModel | Kirschning | no | microstrip dispersion model [Kirschning, Getsinger] |
| Temp | 26.85 | no | temperatura de simulación en grados Celsius |
Microstrip Lange Coupler¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Microstrip Lange Coupler |
Descripción |
microstrip lange coupler |
| Schematic entry | MLANGE |
| Netlist entry | MS |
Tipo |
AnalogComponent |
| Bitmap file | mslange |
Propiedades |
7 |
| Category | transmission lines |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Subst | Subst1 | Sí |
nombre de la definición del sustrato |
| W | 1 mm | Sí |
ancho de la línea |
| L | 10 mm | Sí |
longitud de la línea |
| S | 1 mm | Sí |
espaciado entre las líneas |
Modelo |
Kirschning | no | microstrip model [Kirschning, Hammerstad] |
| DispModel | Kirschning | no | microstrip dispersion model [Kirschning, Getsinger] |
| Temp | 26.85 | no | temperatura de simulación en grados Celsius |
Esquina Microstrip¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Esquina Microstrip |
Descripción |
microstrip corner |
| Schematic entry | MCORN |
| Netlist entry | MS |
Tipo |
AnalogComponent |
| Bitmap file | mscorner |
Propiedades |
2 |
| Category | transmission lines |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Subst | Subst1 | Sí |
sustrato |
| W | 1 mm | Sí |
ancho de línea |
Microstrip en Esquina Biselada¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Microstrip en Esquina Biselada |
Descripción |
microstrip en esquina biselada |
| Schematic entry | MMBEND |
| Netlist entry | MS |
Tipo |
AnalogComponent |
| Bitmap file | msmbend |
Propiedades |
2 |
| Category | transmission lines |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Subst | Subst1 | Sí |
sustrato |
| W | 1 mm | Sí |
ancho de línea |
Paso Microstrip¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Paso Microstrip |
Descripción |
paso de impedancia microstrip |
| Schematic entry | MSTEP |
| Netlist entry | MS |
Tipo |
AnalogComponent |
| Bitmap file | msstep |
Propiedades |
5 |
| Category | transmission lines |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Subst | Subst1 | Sí |
sustrato |
| W1 | 2 mm | Sí |
ancho 1 de la línea |
| W2 | 1 mm | Sí |
ancho 2 de la línea |
| MSModel | Hammerstad | no | quasi-static microstrip model [Hammerstad, Wheeler, Schneider] |
| MSDispModel | Kirschning | no | microstrip dispersion model [Kirschning, Kobayashi, Yamashita, Hammerstad, Getsinger, Schneider, Pramanick] |
Punto de Partida Microstrip¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Punto de Partida Microstrip |
Descripción |
punto de partida microstrip |
| Schematic entry | MTEE |
| Netlist entry | MS |
Tipo |
AnalogComponent |
| Bitmap file | mstee |
Propiedades |
8 |
| Category | transmission lines |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Subst | Subst1 | Sí |
sustrato |
| W1 | 1 mm | Sí |
ancho de la línea 1 |
| W2 | 1 mm | Sí |
ancho de la línea 2 |
| W3 | 2 mm | Sí |
ancho de la línea 3 |
| MSModel | Hammerstad | no | quasi-static microstrip model [Hammerstad, Wheeler, Schneider] |
| MSDispModel | Kirschning | no | microstrip dispersion model [Kirschning, Kobayashi, Yamashita, Hammerstad, Getsinger, Schneider, Pramanick] |
| Temp | 26.85 | no | temperatura en grados Celsius |
| Symbol | showNumbers | no | show port numbers in symbol or not [showNumbers, noNumbers] |
Cruce Microstrip¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Cruce Microstrip |
Descripción |
cruce microstrip |
| Schematic entry | MCROSS |
| Netlist entry | MS |
Tipo |
AnalogComponent |
| Bitmap file | mscross |
Propiedades |
8 |
| Category | transmission lines |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Subst | Subst1 | Sí |
sustrato |
| W1 | 1 mm | Sí |
ancho de la línea 1 |
| W2 | 2 mm | Sí |
ancho de la línea 2 |
| W3 | 1 mm | Sí |
ancho de la línea 3 |
| W4 | 2 mm | Sí |
ancho de la línea 4 |
| MSModel | Hammerstad | no | quasi-static microstrip model [Hammerstad, Wheeler, Schneider] |
| MSDispModel | Kirschning | no | microstrip dispersion model [Kirschning, Kobayashi, Yamashita, Hammerstad, Getsinger, Schneider, Pramanick] |
| Symbol | showNumbers | no | show port numbers in symbol or not [showNumbers, noNumbers] |
Apertura Microstrip¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Apertura Microstrip |
Descripción |
apertura microstrip |
| Schematic entry | MOPEN |
| Netlist entry | MS |
Tipo |
AnalogComponent |
| Bitmap file | msopen |
Propiedades |
5 |
| Category | transmission lines |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Subst | Subst1 | Sí |
nombre de la definición del sustrato |
| W | 1 mm | Sí |
ancho de la línea |
| MSModel | Hammerstad | no | quasi-static microstrip model [Hammerstad, Wheeler, Schneider] |
| MSDispModel | Kirschning | no | microstrip dispersion model [Kirschning, Kobayashi, Yamashita, Hammerstad, Getsinger, Schneider, Pramanick] |
Modelo |
Kirschning | no | microstrip open end model [Kirschning, Hammerstad, Alexopoulos] |
Gap Microstrip¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Gap Microstrip |
Descripción |
gap microstrip |
| Schematic entry | MGAP |
| Netlist entry | MS |
Tipo |
AnalogComponent |
| Bitmap file | msgap |
Propiedades |
6 |
| Category | transmission lines |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Subst | Subst1 | Sí |
nombre de la definición del sustrato |
| W1 | 1 mm | Sí |
ancho de la línea 1 |
| W2 | 1 mm | Sí |
ancho de la línea 2 |
| S | 1 mm | Sí |
espacio entre los finales del microstrip |
| MSModel | Hammerstad | no | quasi-static microstrip model [Hammerstad, Wheeler, Schneider] |
| MSDispModel | Kirschning | no | microstrip dispersion model [Kirschning, Kobayashi, Yamashita, Hammerstad, Getsinger, Schneider, Pramanick] |
Via Microstrip¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Via Microstrip |
Descripción |
via microstrip |
| Schematic entry | MVIA |
| Netlist entry | MS |
Tipo |
AnalogComponent |
| Bitmap file | msvia |
Propiedades |
3 |
| Category | transmission lines |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Subst | Subst1 | Sí |
sustrato |
| D | 1 mm | Sí |
díametro del conductor de vía redondeado |
| Temp | 26.85 | no | temperatura de simulación en grados Celsius |
Microstrip Radial Stub¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Microstrip Radial Stub |
Descripción |
microstrip radial stub |
| Schematic entry | MRSTUB |
| Netlist entry | MS |
Tipo |
AnalogComponent |
| Bitmap file | msrstub |
Propiedades |
4 |
| Category | transmission lines |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Subst | Subst1 | Sí |
nombre de la definición del sustrato |
| ri | 1 mm | no | inner radius |
| ro | 10 mm | Sí |
outer radius |
| alpha | 90 | Sí |
stub angle (degrees) |
Línea Coplanar¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Línea Coplanar |
Descripción |
línea coplanar |
| Schematic entry | CLIN |
| Netlist entry | CL |
Tipo |
AnalogComponent |
| Bitmap file | coplanar |
Propiedades |
6 |
| Category | transmission lines |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Subst | Subst1 | Sí |
nombre de la definición del sustrato |
| W | 1 mm | Sí |
ancho de la línea |
| S | 1 mm | Sí |
ancho del gap |
| L | 10 mm | Sí |
longitud de la línea |
| Backside | Air | no | material at the backside of the substrate [Metal, Air] |
| Approx | Sí |
no | use approximation instead of precise equation [yes, no] |
Coplanar Abierto¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Coplanar Abierto |
Descripción |
coplanar abierto |
| Schematic entry | COPEN |
| Netlist entry | CL |
Tipo |
AnalogComponent |
| Bitmap file | cpwopen |
Propiedades |
5 |
| Category | transmission lines |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Subst | Subst1 | Sí |
nombre de la definición del sustrato |
| W | 1 mm | Sí |
ancho de la línea |
| S | 1 mm | Sí |
ancho del gap |
| G | 5 mm | Sí |
ancho del gap al final de la línea |
| Backside | Air | no | material at the backside of the substrate [Metal, Air] |
Coplanar Corto¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Coplanar Corto |
Descripción |
coplanar corto |
| Schematic entry | CSHORT |
| Netlist entry | CL |
Tipo |
AnalogComponent |
| Bitmap file | cpwshort |
Propiedades |
4 |
| Category | transmission lines |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Subst | Subst1 | Sí |
nombre de la definición del sustrato |
| W | 1 mm | Sí |
ancho de la línea |
| S | 1 mm | Sí |
ancho del gap |
| Backside | Air | no | material at the backside of the substrate [Metal, Air] |
Gap Coplanar¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Gap Coplanar |
Descripción |
gap coplanar |
| Schematic entry | CGAP |
| Netlist entry | CL |
Tipo |
AnalogComponent |
| Bitmap file | cpwgap |
Propiedades |
4 |
| Category | transmission lines |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Subst | Subst1 | Sí |
nombre de la definición del sustrato |
| W | 1 mm | Sí |
ancho de la línea |
| S | 1 mm | Sí |
ancho del gap |
| G | 0.5 mm | Sí |
ancho del gap entre las dos líneas |
Paso Coplanar¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Paso Coplanar |
Descripción |
paso coplanar |
| Schematic entry | CSTEP |
| Netlist entry | CL |
Tipo |
AnalogComponent |
| Bitmap file | cpwstep |
Propiedades |
5 |
| Category | transmission lines |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Subst | Subst1 | Sí |
nombre de la definición del sustrato |
| W1 | 1 mm | Sí |
ancho de la línea 1 |
| W2 | 2 mm | Sí |
ancho de la línea 2 |
| S | 3 mm | Sí |
distancia entre planos de tierra |
| Backside | Air | no | material at the backside of the substrate [Metal, Air] |
Doblez de Cable¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Doblez de Cable |
Descripción |
Doblez de cable |
| Schematic entry | BOND |
| Netlist entry | Line |
Tipo |
AnalogComponent |
| Bitmap file | bondwire |
Propiedades |
8 |
| Category | transmission lines |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| L | 3 mm | Sí |
longitud del cable |
| D | 50 um | Sí |
diámetro del cable |
| H | 2 mm | Sí |
altura sobre el plano de masa |
| rho | 0.022e-6 | no | resistencia específica del metal |
| mur | 1 | no | permeabilidad relativa del metal |
Modelo |
FREESPACE | no | bond wire model [FREESPACE, MIRROR, DESCHARLES] |
| Subst | Subst1 | Sí |
sustrato |
| Temp | 26.85 | no | temperatura de simulación en grados Celsius |
Nonlinear Components¶
Diodo¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Diodo |
Descripción |
diodo |
| Schematic entry | Diode |
| Netlist entry | D |
Tipo |
AnalogComponent |
| Bitmap file | diodo |
Propiedades |
29 |
| Category | nonlinear components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Is | 1e-15 A | Sí |
corriente de saturación |
| N | 1 | Sí |
coeficiente de emisión |
| Cj0 | 10 fF | Sí |
capacidad de polarización de la unión |
| M | 0.5 | no | coeficiente de graduación |
| Vj | 0.7 V | no | potencial de la unión |
| Fc | 0.5 | no | coeficiente de pérdida de capacidad en polarización directa |
| Cp | 0.0 fF | no | capacidad lineal |
| Isr | 0.0 | no | parámetro de recombinación de la corriente |
| Nr | 2.0 | no | coeficiente de emisión para lsr |
| Rs | 0.0 Ohm | no | resistencia serie en óhmios |
| Tt | 0.0 ps | no | tiempo de tránsito |
| Ikf | 0 | no | high-injection knee current (0=infinito) |
| Kf | 0.0 | no | coeficiente de ruido térmico |
| Af | 1.0 | no | exponente de ruido térmico |
| Ffe | 1.0 | no | exponente de frecuencia de ruido térmico |
| Bv | 0 | no | tensión de ruptura inversa |
| Ibv | 1 mA | no | corriente en la tensión de ruptura inversa |
| Temp | 26.85 | no | temperatura de simulación en grados Celsius |
| Xti | 3.0 | no | exponente de temperatura de la corriente de saturación |
| Eg | 1.11 | no | Ancho del salto de energía en eV |
| Tbv | 0.0 | no | coeficiente de temperatura lineal Bv |
| Trs | 0.0 | no | coeficiente de temperatura lineal Rs |
| Ttt1 | 0.0 | no | coeficiente de temperatura lineal Tt |
| Ttt2 | 0.0 | no | coeficiente de temperatura cuadrático Tt |
| Tm1 | 0.0 | no | coeficiente de temperatura lineal M |
| Tm2 | 0.0 | no | coeficiente de temperatura cuadrático M |
| Tnom | 26.85 | no | temperatura a la que se extraen los parámetros |
| Area | 1.0 | no | area predeterminada para el diodo |
| Symbol | normal | no | schematic symbol [normal, US, Schottky, Zener, Varactor] |
Npn Transistor¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | transitor npn |
Descripción |
transistor de unión bipolar |
| Schematic entry | _BJT |
| Netlist entry | T |
Tipo |
AnalogComponent |
| Bitmap file | npn |
Propiedades |
48 |
| Category | nonlinear components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
Tipo |
npn | Sí |
polarity [npn, pnp] |
| Is | 1e-16 | Sí |
corriente de saturación |
| Nf | 1 | Sí |
coeficiente de emisión directa |
| Nr | 1 | no | coeficiente de emisión inversa |
| Ikf | 0 | no | pico de corriente elevada para beta directa |
| Ikr | 0 | no | pico de corriente elevada para beta inversa |
| Vaf | 0 | Sí |
tensión temprana directa |
| Var | 0 | no | tensión temprana inversa |
| Ise | 0 | no | intensidad de saturación base-emisor |
| Ne | 1.5 | no | coeficiente de emisión de fugas base-emisor |
| Isc | 0 | no | intensidad de saturación base-colector |
| Nc | 2 | no | coeficiente de emisión de fugas base-colector |
| Bf | 100 | Sí |
ganancia (beta) directa |
| Br | 1 | no | ganancia (beta) inversa |
| Rbm | 0 | no | resistencia mínima de la base con corrientes altas |
| Irb | 0 | no | corriente en la base para punto de resistencia media |
| Rc | 0 | no | resistencia óhmica del colector |
| Re | 0 | no | resistencia óhmica del emisor |
| Rb | 0 | no | resistencia de polarización de la base (puede depender de las corrientes altas) |
| Cje | 0 | no | capacidad de pérdidas en la polarización base-emisor |
| Vje | 0.75 | no | potencial de la unión base-emisor |
| Mje | 0.33 | no | factor exponencial de la unión base-emisor |
| Cjc | 0 | no | capacidad de pérdidas en la polarización base-colector |
| Vjc | 0.75 | no | potencial de la unión base-colector |
| Mjc | 0.33 | no | factor exponencial de la unión base colector |
| Xcjc | 1.0 | no | fracción de Cjc que va al conector interno de la base |
| Cjs | 0 | no | capacidad de la polarización colector-sustrato |
| Vjs | 0.75 | no | potencial interno de la unión-sustrato |
| Mjs | 0 | no | factor exponencial unión-sustrato |
| Fc | 0.5 | no | coeficiente de pérdida de capacidad en polarización directa |
| Tf | 0.0 | no | tiempo ideal de tránsito en directa |
| Xtf | 0.0 | no | coeficiente de dependencia de la polarización para Tf (Tiempo de tránsito base polar directa) |
| Vtf | 0.0 | no | dependencia de tensión de Tf en la tensión base-colector |
| Itf | 0.0 | no | efecto de las corrientes altas en Tf (Tiempo de tránsito base polar directa) |
| Tr | 0.0 | no | tiempo de tránsito ideal en inversa |
| Temp | 26.85 | no | temperatura de simulación en grados Celsius |
| Kf | 0.0 | no | coeficiente de ruido térmico |
| Af | 1.0 | no | exponente de ruido térmico |
| Ffe | 1.0 | no | exponente de frecuencia de ruido térmico |
| Kb | 0.0 | no | coeficiente de ruido a ráfagas |
| Ab | 1.0 | no | exponente de ruido a ráfagas |
| Fb | 1.0 | no | frecuencia de esquina del ruido a ráfagas en Hertzios |
| Ptf | 0.0 | no | exceso de fase en grados |
| Xtb | 0.0 | no | exponente de temperatura para la beta inversa y directa |
| Xti | 3.0 | no | exponente de temperatura de la corriente de saturación |
| Eg | 1.11 | no | Ancho del salto de energía en eV |
| Tnom | 26.85 | no | temperatura a la que se extraen los parámetros |
| Area | 1.0 | no | area predeterminada para el transistor bipolar |
Pnp Transistor¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | transistor pnp |
Descripción |
transistor de unión bipolar |
| Schematic entry | _BJT |
| Netlist entry | T |
Tipo |
AnalogComponent |
| Bitmap file | pnp |
Propiedades |
48 |
| Category | nonlinear components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
Tipo |
pnp | Sí |
polarity [npn, pnp] |
| Is | 1e-16 | Sí |
corriente de saturación |
| Nf | 1 | Sí |
coeficiente de emisión directa |
| Nr | 1 | no | coeficiente de emisión inversa |
| Ikf | 0 | no | pico de corriente elevada para beta directa |
| Ikr | 0 | no | pico de corriente elevada para beta inversa |
| Vaf | 0 | Sí |
tensión temprana directa |
| Var | 0 | no | tensión temprana inversa |
| Ise | 0 | no | intensidad de saturación base-emisor |
| Ne | 1.5 | no | coeficiente de emisión de fugas base-emisor |
| Isc | 0 | no | intensidad de saturación base-colector |
| Nc | 2 | no | coeficiente de emisión de fugas base-colector |
| Bf | 100 | Sí |
ganancia (beta) directa |
| Br | 1 | no | ganancia (beta) inversa |
| Rbm | 0 | no | resistencia mínima de la base con corrientes altas |
| Irb | 0 | no | corriente en la base para punto de resistencia media |
| Rc | 0 | no | resistencia óhmica del colector |
| Re | 0 | no | resistencia óhmica del emisor |
| Rb | 0 | no | resistencia de polarización de la base (puede depender de las corrientes altas) |
| Cje | 0 | no | capacidad de pérdidas en la polarización base-emisor |
| Vje | 0.75 | no | potencial de la unión base-emisor |
| Mje | 0.33 | no | factor exponencial de la unión base-emisor |
| Cjc | 0 | no | capacidad de pérdidas en la polarización base-colector |
| Vjc | 0.75 | no | potencial de la unión base-colector |
| Mjc | 0.33 | no | factor exponencial de la unión base colector |
| Xcjc | 1.0 | no | fracción de Cjc que va al conector interno de la base |
| Cjs | 0 | no | capacidad de la polarización colector-sustrato |
| Vjs | 0.75 | no | potencial interno de la unión-sustrato |
| Mjs | 0 | no | factor exponencial unión-sustrato |
| Fc | 0.5 | no | coeficiente de pérdida de capacidad en polarización directa |
| Tf | 0.0 | no | tiempo ideal de tránsito en directa |
| Xtf | 0.0 | no | coeficiente de dependencia de la polarización para Tf (Tiempo de tránsito base polar directa) |
| Vtf | 0.0 | no | dependencia de tensión de Tf en la tensión base-colector |
| Itf | 0.0 | no | efecto de las corrientes altas en Tf (Tiempo de tránsito base polar directa) |
| Tr | 0.0 | no | tiempo de tránsito ideal en inversa |
| Temp | 26.85 | no | temperatura de simulación en grados Celsius |
| Kf | 0.0 | no | coeficiente de ruido térmico |
| Af | 1.0 | no | exponente de ruido térmico |
| Ffe | 1.0 | no | exponente de frecuencia de ruido térmico |
| Kb | 0.0 | no | coeficiente de ruido a ráfagas |
| Ab | 1.0 | no | exponente de ruido a ráfagas |
| Fb | 1.0 | no | frecuencia de esquina del ruido a ráfagas en Hertzios |
| Ptf | 0.0 | no | exceso de fase en grados |
| Xtb | 0.0 | no | exponente de temperatura para la beta inversa y directa |
| Xti | 3.0 | no | exponente de temperatura de la corriente de saturación |
| Eg | 1.11 | no | Ancho del salto de energía en eV |
| Tnom | 26.85 | no | temperatura a la que se extraen los parámetros |
| Area | 1.0 | no | area predeterminada para el transistor bipolar |
Npn Transistor¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | transitor npn |
Descripción |
transistor de unión bipolar con substrato |
| Schematic entry | BJT |
| Netlist entry | T |
Tipo |
AnalogComponent |
| Bitmap file | npnsub |
Propiedades |
48 |
| Category | nonlinear components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
Tipo |
npn | Sí |
polarity [npn, pnp] |
| Is | 1e-16 | Sí |
corriente de saturación |
| Nf | 1 | Sí |
coeficiente de emisión directa |
| Nr | 1 | no | coeficiente de emisión inversa |
| Ikf | 0 | no | pico de corriente elevada para beta directa |
| Ikr | 0 | no | pico de corriente elevada para beta inversa |
| Vaf | 0 | Sí |
tensión temprana directa |
| Var | 0 | no | tensión temprana inversa |
| Ise | 0 | no | intensidad de saturación base-emisor |
| Ne | 1.5 | no | coeficiente de emisión de fugas base-emisor |
| Isc | 0 | no | intensidad de saturación base-colector |
| Nc | 2 | no | coeficiente de emisión de fugas base-colector |
| Bf | 100 | Sí |
ganancia (beta) directa |
| Br | 1 | no | ganancia (beta) inversa |
| Rbm | 0 | no | resistencia mínima de la base con corrientes altas |
| Irb | 0 | no | corriente en la base para punto de resistencia media |
| Rc | 0 | no | resistencia óhmica del colector |
| Re | 0 | no | resistencia óhmica del emisor |
| Rb | 0 | no | resistencia de polarización de la base (puede depender de las corrientes altas) |
| Cje | 0 | no | capacidad de pérdidas en la polarización base-emisor |
| Vje | 0.75 | no | potencial de la unión base-emisor |
| Mje | 0.33 | no | factor exponencial de la unión base-emisor |
| Cjc | 0 | no | capacidad de pérdidas en la polarización base-colector |
| Vjc | 0.75 | no | potencial de la unión base-colector |
| Mjc | 0.33 | no | factor exponencial de la unión base colector |
| Xcjc | 1.0 | no | fracción de Cjc que va al conector interno de la base |
| Cjs | 0 | no | capacidad de la polarización colector-sustrato |
| Vjs | 0.75 | no | potencial interno de la unión-sustrato |
| Mjs | 0 | no | factor exponencial unión-sustrato |
| Fc | 0.5 | no | coeficiente de pérdida de capacidad en polarización directa |
| Tf | 0.0 | no | tiempo ideal de tránsito en directa |
| Xtf | 0.0 | no | coeficiente de dependencia de la polarización para Tf (Tiempo de tránsito base polar directa) |
| Vtf | 0.0 | no | dependencia de tensión de Tf en la tensión base-colector |
| Itf | 0.0 | no | efecto de las corrientes altas en Tf (Tiempo de tránsito base polar directa) |
| Tr | 0.0 | no | tiempo de tránsito ideal en inversa |
| Temp | 26.85 | no | temperatura de simulación en grados Celsius |
| Kf | 0.0 | no | coeficiente de ruido térmico |
| Af | 1.0 | no | exponente de ruido térmico |
| Ffe | 1.0 | no | exponente de frecuencia de ruido térmico |
| Kb | 0.0 | no | coeficiente de ruido a ráfagas |
| Ab | 1.0 | no | exponente de ruido a ráfagas |
| Fb | 1.0 | no | frecuencia de esquina del ruido a ráfagas en Hertzios |
| Ptf | 0.0 | no | exceso de fase en grados |
| Xtb | 0.0 | no | exponente de temperatura para la beta inversa y directa |
| Xti | 3.0 | no | exponente de temperatura de la corriente de saturación |
| Eg | 1.11 | no | Ancho del salto de energía en eV |
| Tnom | 26.85 | no | temperatura a la que se extraen los parámetros |
| Area | 1.0 | no | area predeterminada para el transistor bipolar |
Pnp Transistor¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | transistor pnp |
Descripción |
transistor de unión bipolar con substrato |
| Schematic entry | BJT |
| Netlist entry | T |
Tipo |
AnalogComponent |
| Bitmap file | pnpsub |
Propiedades |
48 |
| Category | nonlinear components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
Tipo |
pnp | Sí |
polarity [npn, pnp] |
| Is | 1e-16 | Sí |
corriente de saturación |
| Nf | 1 | Sí |
coeficiente de emisión directa |
| Nr | 1 | no | coeficiente de emisión inversa |
| Ikf | 0 | no | pico de corriente elevada para beta directa |
| Ikr | 0 | no | pico de corriente elevada para beta inversa |
| Vaf | 0 | Sí |
tensión temprana directa |
| Var | 0 | no | tensión temprana inversa |
| Ise | 0 | no | intensidad de saturación base-emisor |
| Ne | 1.5 | no | coeficiente de emisión de fugas base-emisor |
| Isc | 0 | no | intensidad de saturación base-colector |
| Nc | 2 | no | coeficiente de emisión de fugas base-colector |
| Bf | 100 | Sí |
ganancia (beta) directa |
| Br | 1 | no | ganancia (beta) inversa |
| Rbm | 0 | no | resistencia mínima de la base con corrientes altas |
| Irb | 0 | no | corriente en la base para punto de resistencia media |
| Rc | 0 | no | resistencia óhmica del colector |
| Re | 0 | no | resistencia óhmica del emisor |
| Rb | 0 | no | resistencia de polarización de la base (puede depender de las corrientes altas) |
| Cje | 0 | no | capacidad de pérdidas en la polarización base-emisor |
| Vje | 0.75 | no | potencial de la unión base-emisor |
| Mje | 0.33 | no | factor exponencial de la unión base-emisor |
| Cjc | 0 | no | capacidad de pérdidas en la polarización base-colector |
| Vjc | 0.75 | no | potencial de la unión base-colector |
| Mjc | 0.33 | no | factor exponencial de la unión base colector |
| Xcjc | 1.0 | no | fracción de Cjc que va al conector interno de la base |
| Cjs | 0 | no | capacidad de la polarización colector-sustrato |
| Vjs | 0.75 | no | potencial interno de la unión-sustrato |
| Mjs | 0 | no | factor exponencial unión-sustrato |
| Fc | 0.5 | no | coeficiente de pérdida de capacidad en polarización directa |
| Tf | 0.0 | no | tiempo ideal de tránsito en directa |
| Xtf | 0.0 | no | coeficiente de dependencia de la polarización para Tf (Tiempo de tránsito base polar directa) |
| Vtf | 0.0 | no | dependencia de tensión de Tf en la tensión base-colector |
| Itf | 0.0 | no | efecto de las corrientes altas en Tf (Tiempo de tránsito base polar directa) |
| Tr | 0.0 | no | tiempo de tránsito ideal en inversa |
| Temp | 26.85 | no | temperatura de simulación en grados Celsius |
| Kf | 0.0 | no | coeficiente de ruido térmico |
| Af | 1.0 | no | exponente de ruido térmico |
| Ffe | 1.0 | no | exponente de frecuencia de ruido térmico |
| Kb | 0.0 | no | coeficiente de ruido a ráfagas |
| Ab | 1.0 | no | exponente de ruido a ráfagas |
| Fb | 1.0 | no | frecuencia de esquina del ruido a ráfagas en Hertzios |
| Ptf | 0.0 | no | exceso de fase en grados |
| Xtb | 0.0 | no | exponente de temperatura para la beta inversa y directa |
| Xti | 3.0 | no | exponente de temperatura de la corriente de saturación |
| Eg | 1.11 | no | Ancho del salto de energía en eV |
| Tnom | 26.85 | no | temperatura a la que se extraen los parámetros |
| Area | 1.0 | no | area predeterminada para el transistor bipolar |
N-Jfet¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | JFET-n |
Descripción |
transistor de unión de efecto de campo |
| Schematic entry | JFET |
| Netlist entry | T |
Tipo |
AnalogComponent |
| Bitmap file | nfet |
Propiedades |
24 |
| Category | nonlinear components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
Tipo |
nfet | Sí |
polarity [nfet, pfet] |
| Vt0 | -2.0 V | Sí |
tensión umbral |
| Beta | 1e-4 | Sí |
parámetro de transconductancia |
| Lambda | 0.0 | Sí |
parámetro de modulación de la longitud del canal |
| Rd | 0.0 | no | resistencia de drenador parásita |
| Rs | 0.0 | no | resistencia de surtidor parásita |
| Is | 1e-14 | no | corriente de saturación de la puerta |
| N | 1.0 | no | coeficente de emisión de la puerta |
| Isr | 1e-14 | no | parámetro de corriente de recombinación de la puerta |
| Nr | 2.0 | no | coeficiente de emisión lsr |
| Cgs | 0.0 | no | capacidad de la polarización puerta-surtidor |
| Cgd | 0.0 | no | capacidad de la polarización puerta-drenador |
| Pb | 1.0 | no | potencial de la puerta |
| Fc | 0.5 | no | coeficiente de polarizacación directa de la unión |
| M | 0.5 | no | coeficiente de graduación P-N |
| Kf | 0.0 | no | coeficiente de ruido térmico |
| Af | 1.0 | no | exponente de ruido térmico |
| Ffe | 1.0 | no | exponente de frecuencia de ruido térmico |
| Temp | 26.85 | no | temperatura de simulación en grados Celsius |
| Xti | 3.0 | no | exponente de temperatura de la corriente de saturación |
| Vt0tc | 0.0 | no | coeficiente de temperatura Vt0 |
| Betatce | 0.0 | no | coeficiente de temperatura exponencial Beta |
| Tnom | 26.85 | no | temperatura a la que se extraen los parámetros |
| Area | 1.0 | no | area predeterminada para JFET |
P-Jfet¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | JFET-p |
Descripción |
transistor de unión de efecto de campo |
| Schematic entry | JFET |
| Netlist entry | T |
Tipo |
AnalogComponent |
| Bitmap file | pfet |
Propiedades |
24 |
| Category | nonlinear components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
Tipo |
pfet | Sí |
polarity [nfet, pfet] |
| Vt0 | -2.0 V | Sí |
tensión umbral |
| Beta | 1e-4 | Sí |
parámetro de transconductancia |
| Lambda | 0.0 | Sí |
parámetro de modulación de la longitud del canal |
| Rd | 0.0 | no | resistencia de drenador parásita |
| Rs | 0.0 | no | resistencia de surtidor parásita |
| Is | 1e-14 | no | corriente de saturación de la puerta |
| N | 1.0 | no | coeficente de emisión de la puerta |
| Isr | 1e-14 | no | parámetro de corriente de recombinación de la puerta |
| Nr | 2.0 | no | coeficiente de emisión lsr |
| Cgs | 0.0 | no | capacidad de la polarización puerta-surtidor |
| Cgd | 0.0 | no | capacidad de la polarización puerta-drenador |
| Pb | 1.0 | no | potencial de la puerta |
| Fc | 0.5 | no | coeficiente de polarizacación directa de la unión |
| M | 0.5 | no | coeficiente de graduación P-N |
| Kf | 0.0 | no | coeficiente de ruido térmico |
| Af | 1.0 | no | exponente de ruido térmico |
| Ffe | 1.0 | no | exponente de frecuencia de ruido térmico |
| Temp | 26.85 | no | temperatura de simulación en grados Celsius |
| Xti | 3.0 | no | exponente de temperatura de la corriente de saturación |
| Vt0tc | 0.0 | no | coeficiente de temperatura Vt0 |
| Betatce | 0.0 | no | coeficiente de temperatura exponencial Beta |
| Tnom | 26.85 | no | temperatura a la que se extraen los parámetros |
| Area | 1.0 | no | area predeterminada para JFET |
N-Mosfet¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | MOSFET-n |
Descripción |
transistor de efecto de campo MOS |
| Schematic entry | _MOSFET |
| Netlist entry | T |
Tipo |
AnalogComponent |
| Bitmap file | nmosfet |
Propiedades |
44 |
| Category | nonlinear components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
Tipo |
nfet | no | polarity [nfet, pfet] |
| Vt0 | 1.0 V | Sí |
tensión umbral de polarización |
| Kp | 2e-5 | Sí |
coeficiente de transconductancia en A/V^2 |
| Gamma | 0.0 | no | sustrato umbral en raiz cuadrada de V |
| Phi | 0.6 V | no | potencial de la superficie |
| Lambda | 0.0 | Sí |
parámetro de modulación de la longitud del canal en 1/V |
| Rd | 0.0 Ohm | no | resistencia del drenador |
| Rs | 0.0 Ohm | no | resistencia del surtidor |
| Rg | 0.0 Ohm | no | resistencia de la puerta |
| Is | 1e-14 A | no | corriente de saturación unión-sustrato |
| N | 1.0 | no | coeficiente de emisión de la unión del sustrato |
| W | 1 um | no | ancho del canal |
| L | 1 um | no | longitud del canal |
| Ld | 0.0 | no | longitud de difusión lateral |
| Tox | 0.1 um | no | grosor del óxido |
| Cgso | 0.0 | no | capacidad sobrepuesta de la puerta-surtidor por metro de la anchura del canal en F/m |
| Cgdo | 0.0 | no | capacidad sobrepuesta de la puerta-drenador por metro de la anchura del canal en F/m |
| Cgbo | 0.0 | no | capacidad sobrepuesta puerta-sustrato por metro de longitud del canal en F/m |
| Cbd | 0.0 F | no | capacidad de la polarización de la unión sustrato-drenador |
| Cbs | 0.0 F | no | capacidad de la polarización de la unión sustrato-surtidor |
| Pb | 0.8 V | no | potencial unión-sustrato |
| Mj | 0.5 | no | Parámetero de difusión del substrato |
| Fc | 0.5 | no | bulk junction forward-bias depletion capacitance coefficient |
| Cjsw | 0.0 | no | zero-bias bulk junction periphery capacitance per meter of junction perimeter in F/m |
| Mjsw | 0.33 | no | bulk junction periphery grading coefficient |
| Tt | 0.0 ps | no | tiempo de tránsito del sustrato |
| Nsub | 0.0 | no | substrate bulk doping density in 1/cm^3 |
| Nss | 0.0 | no | densidad del estado de la superficie en 1/cm² |
| Tpg | 1 | no | tipo de material de la puerta: 0 = aluminio; -1=igual que el sustrato; 1=contrario al sustrato |
| Uo | 600.0 | no | movilidad de la superficie en cm²/Vs |
| Rsh | 0.0 | no | hoja de difusión del surtidor y drenador con la resistencia en Ohms/cuadrado |
| Nrd | 1 | no | número de cuadrados de drenador equivalentes |
| Nrs | 1 | no | número de cuadrados de surtidor equivalentes |
| Cj | 0.0 | no | capaicidad de la polarización de la unión inferior del sustrato por metro cuadrado de área de unión en F/m² |
| Js | 0.0 | no | corriente de saturación del sustrato por metro cuadrado del área de la unión en A/m² |
| Ad | 0.0 | no | área de difusión del drenador en m² |
| As | 0.0 | no | área de difusión del surtidor en m² |
| Pd | 0.0 m | no | perímetro de la unión del drenador |
| Ps | 0.0 m | no | perímetro de la unión del surtidor |
| Kf | 0.0 | no | coeficiente de ruido térmico |
| Af | 1.0 | no | exponente de ruido térmico |
| Ffe | 1.0 | no | exponente de frecuencia de ruido térmico |
| Temp | 26.85 | no | temperatura de simulación en grados Celsius |
| Tnom | 26.85 | no | temperatura de medida del parámetro |
P-Mosfet¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | MOSFET-p |
Descripción |
transistor de efecto de campo MOS |
| Schematic entry | _MOSFET |
| Netlist entry | T |
Tipo |
AnalogComponent |
| Bitmap file | pmosfet |
Propiedades |
44 |
| Category | nonlinear components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
Tipo |
pfet | no | polarity [nfet, pfet] |
| Vt0 | -1.0 V | Sí |
tensión umbral de polarización |
| Kp | 2e-5 | Sí |
coeficiente de transconductancia en A/V^2 |
| Gamma | 0.0 | no | sustrato umbral en raiz cuadrada de V |
| Phi | 0.6 V | no | potencial de la superficie |
| Lambda | 0.0 | Sí |
parámetro de modulación de la longitud del canal en 1/V |
| Rd | 0.0 Ohm | no | resistencia del drenador |
| Rs | 0.0 Ohm | no | resistencia del surtidor |
| Rg | 0.0 Ohm | no | resistencia de la puerta |
| Is | 1e-14 A | no | corriente de saturación unión-sustrato |
| N | 1.0 | no | coeficiente de emisión de la unión del sustrato |
| W | 1 um | no | ancho del canal |
| L | 1 um | no | longitud del canal |
| Ld | 0.0 | no | longitud de difusión lateral |
| Tox | 0.1 um | no | grosor del óxido |
| Cgso | 0.0 | no | capacidad sobrepuesta de la puerta-surtidor por metro de la anchura del canal en F/m |
| Cgdo | 0.0 | no | capacidad sobrepuesta de la puerta-drenador por metro de la anchura del canal en F/m |
| Cgbo | 0.0 | no | capacidad sobrepuesta puerta-sustrato por metro de longitud del canal en F/m |
| Cbd | 0.0 F | no | capacidad de la polarización de la unión sustrato-drenador |
| Cbs | 0.0 F | no | capacidad de la polarización de la unión sustrato-surtidor |
| Pb | 0.8 V | no | potencial unión-sustrato |
| Mj | 0.5 | no | Parámetero de difusión del substrato |
| Fc | 0.5 | no | bulk junction forward-bias depletion capacitance coefficient |
| Cjsw | 0.0 | no | zero-bias bulk junction periphery capacitance per meter of junction perimeter in F/m |
| Mjsw | 0.33 | no | bulk junction periphery grading coefficient |
| Tt | 0.0 ps | no | tiempo de tránsito del sustrato |
| Nsub | 0.0 | no | substrate bulk doping density in 1/cm^3 |
| Nss | 0.0 | no | densidad del estado de la superficie en 1/cm² |
| Tpg | 1 | no | tipo de material de la puerta: 0 = aluminio; -1=igual que el sustrato; 1=contrario al sustrato |
| Uo | 600.0 | no | movilidad de la superficie en cm²/Vs |
| Rsh | 0.0 | no | hoja de difusión del surtidor y drenador con la resistencia en Ohms/cuadrado |
| Nrd | 1 | no | número de cuadrados de drenador equivalentes |
| Nrs | 1 | no | número de cuadrados de surtidor equivalentes |
| Cj | 0.0 | no | capaicidad de la polarización de la unión inferior del sustrato por metro cuadrado de área de unión en F/m² |
| Js | 0.0 | no | corriente de saturación del sustrato por metro cuadrado del área de la unión en A/m² |
| Ad | 0.0 | no | área de difusión del drenador en m² |
| As | 0.0 | no | área de difusión del surtidor en m² |
| Pd | 0.0 m | no | perímetro de la unión del drenador |
| Ps | 0.0 m | no | perímetro de la unión del surtidor |
| Kf | 0.0 | no | coeficiente de ruido térmico |
| Af | 1.0 | no | exponente de ruido térmico |
| Ffe | 1.0 | no | exponente de frecuencia de ruido térmico |
| Temp | 26.85 | no | temperatura de simulación en grados Celsius |
| Tnom | 26.85 | no | temperatura de medida del parámetro |
Depletion Mosfet¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | depletion MOSFET |
Descripción |
transistor de efecto de campo MOS |
| Schematic entry | _MOSFET |
| Netlist entry | T |
Tipo |
AnalogComponent |
| Bitmap file | dmosfet |
Propiedades |
44 |
| Category | nonlinear components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
Tipo |
nfet | no | polarity [nfet, pfet] |
| Vt0 | -1.0 V | Sí |
tensión umbral de polarización |
| Kp | 2e-5 | Sí |
coeficiente de transconductancia en A/V^2 |
| Gamma | 0.0 | no | sustrato umbral en raiz cuadrada de V |
| Phi | 0.6 V | no | potencial de la superficie |
| Lambda | 0.0 | Sí |
parámetro de modulación de la longitud del canal en 1/V |
| Rd | 0.0 Ohm | no | resistencia del drenador |
| Rs | 0.0 Ohm | no | resistencia del surtidor |
| Rg | 0.0 Ohm | no | resistencia de la puerta |
| Is | 1e-14 A | no | corriente de saturación unión-sustrato |
| N | 1.0 | no | coeficiente de emisión de la unión del sustrato |
| W | 1 um | no | ancho del canal |
| L | 1 um | no | longitud del canal |
| Ld | 0.0 | no | longitud de difusión lateral |
| Tox | 0.1 um | no | grosor del óxido |
| Cgso | 0.0 | no | capacidad sobrepuesta de la puerta-surtidor por metro de la anchura del canal en F/m |
| Cgdo | 0.0 | no | capacidad sobrepuesta de la puerta-drenador por metro de la anchura del canal en F/m |
| Cgbo | 0.0 | no | capacidad sobrepuesta puerta-sustrato por metro de longitud del canal en F/m |
| Cbd | 0.0 F | no | capacidad de la polarización de la unión sustrato-drenador |
| Cbs | 0.0 F | no | capacidad de la polarización de la unión sustrato-surtidor |
| Pb | 0.8 V | no | potencial unión-sustrato |
| Mj | 0.5 | no | Parámetero de difusión del substrato |
| Fc | 0.5 | no | bulk junction forward-bias depletion capacitance coefficient |
| Cjsw | 0.0 | no | zero-bias bulk junction periphery capacitance per meter of junction perimeter in F/m |
| Mjsw | 0.33 | no | bulk junction periphery grading coefficient |
| Tt | 0.0 ps | no | tiempo de tránsito del sustrato |
| Nsub | 0.0 | no | substrate bulk doping density in 1/cm^3 |
| Nss | 0.0 | no | densidad del estado de la superficie en 1/cm² |
| Tpg | 1 | no | tipo de material de la puerta: 0 = aluminio; -1=igual que el sustrato; 1=contrario al sustrato |
| Uo | 600.0 | no | movilidad de la superficie en cm²/Vs |
| Rsh | 0.0 | no | hoja de difusión del surtidor y drenador con la resistencia en Ohms/cuadrado |
| Nrd | 1 | no | número de cuadrados de drenador equivalentes |
| Nrs | 1 | no | número de cuadrados de surtidor equivalentes |
| Cj | 0.0 | no | capaicidad de la polarización de la unión inferior del sustrato por metro cuadrado de área de unión en F/m² |
| Js | 0.0 | no | corriente de saturación del sustrato por metro cuadrado del área de la unión en A/m² |
| Ad | 0.0 | no | área de difusión del drenador en m² |
| As | 0.0 | no | área de difusión del surtidor en m² |
| Pd | 0.0 m | no | perímetro de la unión del drenador |
| Ps | 0.0 m | no | perímetro de la unión del surtidor |
| Kf | 0.0 | no | coeficiente de ruido térmico |
| Af | 1.0 | no | exponente de ruido térmico |
| Ffe | 1.0 | no | exponente de frecuencia de ruido térmico |
| Temp | 26.85 | no | temperatura de simulación en grados Celsius |
| Tnom | 26.85 | no | temperatura de medida del parámetro |
N-Mosfet¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | MOSFET-n |
Descripción |
Transistor de efecto campo MOS con sustrato |
| Schematic entry | MOSFET |
| Netlist entry | T |
Tipo |
AnalogComponent |
| Bitmap file | nmosfet_sub |
Propiedades |
44 |
| Category | nonlinear components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
Tipo |
nfet | no | polarity [nfet, pfet] |
| Vt0 | 1.0 V | Sí |
tensión umbral de polarización |
| Kp | 2e-5 | Sí |
coeficiente de transconductancia en A/V^2 |
| Gamma | 0.0 | no | sustrato umbral en raiz cuadrada de V |
| Phi | 0.6 V | no | potencial de la superficie |
| Lambda | 0.0 | Sí |
parámetro de modulación de la longitud del canal en 1/V |
| Rd | 0.0 Ohm | no | resistencia del drenador |
| Rs | 0.0 Ohm | no | resistencia del surtidor |
| Rg | 0.0 Ohm | no | resistencia de la puerta |
| Is | 1e-14 A | no | corriente de saturación unión-sustrato |
| N | 1.0 | no | coeficiente de emisión de la unión del sustrato |
| W | 1 um | no | ancho del canal |
| L | 1 um | no | longitud del canal |
| Ld | 0.0 | no | longitud de difusión lateral |
| Tox | 0.1 um | no | grosor del óxido |
| Cgso | 0.0 | no | capacidad sobrepuesta de la puerta-surtidor por metro de la anchura del canal en F/m |
| Cgdo | 0.0 | no | capacidad sobrepuesta de la puerta-drenador por metro de la anchura del canal en F/m |
| Cgbo | 0.0 | no | capacidad sobrepuesta puerta-sustrato por metro de longitud del canal en F/m |
| Cbd | 0.0 F | no | capacidad de la polarización de la unión sustrato-drenador |
| Cbs | 0.0 F | no | capacidad de la polarización de la unión sustrato-surtidor |
| Pb | 0.8 V | no | potencial unión-sustrato |
| Mj | 0.5 | no | Parámetero de difusión del substrato |
| Fc | 0.5 | no | bulk junction forward-bias depletion capacitance coefficient |
| Cjsw | 0.0 | no | zero-bias bulk junction periphery capacitance per meter of junction perimeter in F/m |
| Mjsw | 0.33 | no | bulk junction periphery grading coefficient |
| Tt | 0.0 ps | no | tiempo de tránsito del sustrato |
| Nsub | 0.0 | no | substrate bulk doping density in 1/cm^3 |
| Nss | 0.0 | no | densidad del estado de la superficie en 1/cm² |
| Tpg | 1 | no | tipo de material de la puerta: 0 = aluminio; -1=igual que el sustrato; 1=contrario al sustrato |
| Uo | 600.0 | no | movilidad de la superficie en cm²/Vs |
| Rsh | 0.0 | no | hoja de difusión del surtidor y drenador con la resistencia en Ohms/cuadrado |
| Nrd | 1 | no | número de cuadrados de drenador equivalentes |
| Nrs | 1 | no | número de cuadrados de surtidor equivalentes |
| Cj | 0.0 | no | capaicidad de la polarización de la unión inferior del sustrato por metro cuadrado de área de unión en F/m² |
| Js | 0.0 | no | corriente de saturación del sustrato por metro cuadrado del área de la unión en A/m² |
| Ad | 0.0 | no | área de difusión del drenador en m² |
| As | 0.0 | no | área de difusión del surtidor en m² |
| Pd | 0.0 m | no | perímetro de la unión del drenador |
| Ps | 0.0 m | no | perímetro de la unión del surtidor |
| Kf | 0.0 | no | coeficiente de ruido térmico |
| Af | 1.0 | no | exponente de ruido térmico |
| Ffe | 1.0 | no | exponente de frecuencia de ruido térmico |
| Temp | 26.85 | no | temperatura de simulación en grados Celsius |
| Tnom | 26.85 | no | temperatura de medida del parámetro |
P-Mosfet¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | MOSFET-p |
Descripción |
Transistor de efecto campo MOS con sustrato |
| Schematic entry | MOSFET |
| Netlist entry | T |
Tipo |
AnalogComponent |
| Bitmap file | pmosfet_sub |
Propiedades |
44 |
| Category | nonlinear components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
Tipo |
pfet | no | polarity [nfet, pfet] |
| Vt0 | -1.0 V | Sí |
tensión umbral de polarización |
| Kp | 2e-5 | Sí |
coeficiente de transconductancia en A/V^2 |
| Gamma | 0.0 | no | sustrato umbral en raiz cuadrada de V |
| Phi | 0.6 V | no | potencial de la superficie |
| Lambda | 0.0 | Sí |
parámetro de modulación de la longitud del canal en 1/V |
| Rd | 0.0 Ohm | no | resistencia del drenador |
| Rs | 0.0 Ohm | no | resistencia del surtidor |
| Rg | 0.0 Ohm | no | resistencia de la puerta |
| Is | 1e-14 A | no | corriente de saturación unión-sustrato |
| N | 1.0 | no | coeficiente de emisión de la unión del sustrato |
| W | 1 um | no | ancho del canal |
| L | 1 um | no | longitud del canal |
| Ld | 0.0 | no | longitud de difusión lateral |
| Tox | 0.1 um | no | grosor del óxido |
| Cgso | 0.0 | no | capacidad sobrepuesta de la puerta-surtidor por metro de la anchura del canal en F/m |
| Cgdo | 0.0 | no | capacidad sobrepuesta de la puerta-drenador por metro de la anchura del canal en F/m |
| Cgbo | 0.0 | no | capacidad sobrepuesta puerta-sustrato por metro de longitud del canal en F/m |
| Cbd | 0.0 F | no | capacidad de la polarización de la unión sustrato-drenador |
| Cbs | 0.0 F | no | capacidad de la polarización de la unión sustrato-surtidor |
| Pb | 0.8 V | no | potencial unión-sustrato |
| Mj | 0.5 | no | Parámetero de difusión del substrato |
| Fc | 0.5 | no | bulk junction forward-bias depletion capacitance coefficient |
| Cjsw | 0.0 | no | zero-bias bulk junction periphery capacitance per meter of junction perimeter in F/m |
| Mjsw | 0.33 | no | bulk junction periphery grading coefficient |
| Tt | 0.0 ps | no | tiempo de tránsito del sustrato |
| Nsub | 0.0 | no | substrate bulk doping density in 1/cm^3 |
| Nss | 0.0 | no | densidad del estado de la superficie en 1/cm² |
| Tpg | 1 | no | tipo de material de la puerta: 0 = aluminio; -1=igual que el sustrato; 1=contrario al sustrato |
| Uo | 600.0 | no | movilidad de la superficie en cm²/Vs |
| Rsh | 0.0 | no | hoja de difusión del surtidor y drenador con la resistencia en Ohms/cuadrado |
| Nrd | 1 | no | número de cuadrados de drenador equivalentes |
| Nrs | 1 | no | número de cuadrados de surtidor equivalentes |
| Cj | 0.0 | no | capaicidad de la polarización de la unión inferior del sustrato por metro cuadrado de área de unión en F/m² |
| Js | 0.0 | no | corriente de saturación del sustrato por metro cuadrado del área de la unión en A/m² |
| Ad | 0.0 | no | área de difusión del drenador en m² |
| As | 0.0 | no | área de difusión del surtidor en m² |
| Pd | 0.0 m | no | perímetro de la unión del drenador |
| Ps | 0.0 m | no | perímetro de la unión del surtidor |
| Kf | 0.0 | no | coeficiente de ruido térmico |
| Af | 1.0 | no | exponente de ruido térmico |
| Ffe | 1.0 | no | exponente de frecuencia de ruido térmico |
| Temp | 26.85 | no | temperatura de simulación en grados Celsius |
| Tnom | 26.85 | no | temperatura de medida del parámetro |
Depletion Mosfet¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | depletion MOSFET |
Descripción |
Transistor de efecto campo MOS con sustrato |
| Schematic entry | MOSFET |
| Netlist entry | T |
Tipo |
AnalogComponent |
| Bitmap file | dmosfet_sub |
Propiedades |
44 |
| Category | nonlinear components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
Tipo |
nfet | no | polarity [nfet, pfet] |
| Vt0 | -1.0 V | Sí |
tensión umbral de polarización |
| Kp | 2e-5 | Sí |
coeficiente de transconductancia en A/V^2 |
| Gamma | 0.0 | no | sustrato umbral en raiz cuadrada de V |
| Phi | 0.6 V | no | potencial de la superficie |
| Lambda | 0.0 | Sí |
parámetro de modulación de la longitud del canal en 1/V |
| Rd | 0.0 Ohm | no | resistencia del drenador |
| Rs | 0.0 Ohm | no | resistencia del surtidor |
| Rg | 0.0 Ohm | no | resistencia de la puerta |
| Is | 1e-14 A | no | corriente de saturación unión-sustrato |
| N | 1.0 | no | coeficiente de emisión de la unión del sustrato |
| W | 1 um | no | ancho del canal |
| L | 1 um | no | longitud del canal |
| Ld | 0.0 | no | longitud de difusión lateral |
| Tox | 0.1 um | no | grosor del óxido |
| Cgso | 0.0 | no | capacidad sobrepuesta de la puerta-surtidor por metro de la anchura del canal en F/m |
| Cgdo | 0.0 | no | capacidad sobrepuesta de la puerta-drenador por metro de la anchura del canal en F/m |
| Cgbo | 0.0 | no | capacidad sobrepuesta puerta-sustrato por metro de longitud del canal en F/m |
| Cbd | 0.0 F | no | capacidad de la polarización de la unión sustrato-drenador |
| Cbs | 0.0 F | no | capacidad de la polarización de la unión sustrato-surtidor |
| Pb | 0.8 V | no | potencial unión-sustrato |
| Mj | 0.5 | no | Parámetero de difusión del substrato |
| Fc | 0.5 | no | bulk junction forward-bias depletion capacitance coefficient |
| Cjsw | 0.0 | no | zero-bias bulk junction periphery capacitance per meter of junction perimeter in F/m |
| Mjsw | 0.33 | no | bulk junction periphery grading coefficient |
| Tt | 0.0 ps | no | tiempo de tránsito del sustrato |
| Nsub | 0.0 | no | substrate bulk doping density in 1/cm^3 |
| Nss | 0.0 | no | densidad del estado de la superficie en 1/cm² |
| Tpg | 1 | no | tipo de material de la puerta: 0 = aluminio; -1=igual que el sustrato; 1=contrario al sustrato |
| Uo | 600.0 | no | movilidad de la superficie en cm²/Vs |
| Rsh | 0.0 | no | hoja de difusión del surtidor y drenador con la resistencia en Ohms/cuadrado |
| Nrd | 1 | no | número de cuadrados de drenador equivalentes |
| Nrs | 1 | no | número de cuadrados de surtidor equivalentes |
| Cj | 0.0 | no | capaicidad de la polarización de la unión inferior del sustrato por metro cuadrado de área de unión en F/m² |
| Js | 0.0 | no | corriente de saturación del sustrato por metro cuadrado del área de la unión en A/m² |
| Ad | 0.0 | no | área de difusión del drenador en m² |
| As | 0.0 | no | área de difusión del surtidor en m² |
| Pd | 0.0 m | no | perímetro de la unión del drenador |
| Ps | 0.0 m | no | perímetro de la unión del surtidor |
| Kf | 0.0 | no | coeficiente de ruido térmico |
| Af | 1.0 | no | exponente de ruido térmico |
| Ffe | 1.0 | no | exponente de frecuencia de ruido térmico |
| Temp | 26.85 | no | temperatura de simulación en grados Celsius |
| Tnom | 26.85 | no | temperatura de medida del parámetro |
Opamp¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | AmpOp |
Descripción |
amplificador operacional |
| Schematic entry | OpAmp |
| Netlist entry | OP |
Tipo |
AnalogComponent |
| Bitmap file | opamp |
Propiedades |
2 |
| Category | nonlinear components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| G | 1e6 | Sí |
ganancia de tensión |
| Umax | 15 V | no | valor absoluto del voltaje máximo y mínimo de salida |
Dispositivo de Ecuación Definida¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Dispositivo de Ecuación Definida |
Descripción |
dispositivo de ecuación definida |
| Schematic entry | EDD |
| Netlist entry | D |
Tipo |
AnalogComponent |
| Bitmap file | edd |
Propiedades |
4 |
| Category | nonlinear components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
Tipo |
explicit | no | type of equations [explicit, implicit] |
| Branches | 1 | no | número de ramas |
| I1 | 0 | Sí |
current equation 1 |
| Q1 | 0 | no | charge equation 1 |
Diac¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Diac |
Descripción |
diac (diodo disparador bidireccional) |
| Schematic entry | Diac |
| Netlist entry | D |
Tipo |
AnalogComponent |
| Bitmap file | diac |
Propiedades |
7 |
| Category | nonlinear components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Vbo | 30 V | Sí |
(bidireccional) tensión directa de disparo |
| Ibo | 50 uA | no | (bidireccional) corriente directa de disparo |
| Cj0 | 10 pF | no | capacidad parásita |
| Is | 1e-10 A | no | corriente de saturación |
| N | 2 | no | coeficiente de emisión |
| Ri | 10 Ohm | no | resistencia intrínseca de la unión |
| Temp | 26.85 | no | simulación de temperatura |
Triac¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Triac |
Descripción |
triac (tiristor bidireccional) |
| Schematic entry | Triac |
| Netlist entry | D |
Tipo |
AnalogComponent |
| Bitmap file | triac |
Propiedades |
8 |
| Category | nonlinear components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Vbo | 400 V | no | (bidireccional) tensión directa de disparo |
| Igt | 50 uA | Sí |
(bidireccional) corriente de disparo de puerta |
| Cj0 | 10 pF | no | capacidad parásita |
| Is | 1e-10 A | no | corriente de saturación |
| N | 2 | no | coeficiente de emisión |
| Ri | 10 Ohm | no | resistencia intrínseca de la unión |
| Rg | 5 Ohm | no | resistencia de puerta |
| Temp | 26.85 | no | simulación de temperatura |
Tiristor¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Tiristor |
Descripción |
SCR (rectificador controlado de silicio) |
| Schematic entry | SCR |
| Netlist entry | D |
Tipo |
AnalogComponent |
| Bitmap file | thyristor |
Propiedades |
8 |
| Category | nonlinear components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Vbo | 400 V | no | Tensión de ruptura |
| Igt | 50 uA | Sí |
gate trigger current |
| Cj0 | 10 pF | no | capacidad parásita |
| Is | 1e-10 A | no | corriente de saturación |
| N | 2 | no | coeficiente de emisión |
| Ri | 10 Ohm | no | resistencia intrínseca de la unión |
| Rg | 5 Ohm | no | resistencia de puerta |
| Temp | 26.85 | no | simulación de temperatura |
Tunnel Diode¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Tunnel Diode |
Descripción |
resonance tunnel diode |
| Schematic entry | RTD |
| Netlist entry | D |
Tipo |
AnalogComponent |
| Bitmap file | tunneldiode |
Propiedades |
16 |
| Category | nonlinear components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Ip | 4 mA | Sí |
peak current |
| Iv | 0.6 mA | Sí |
valley current |
| Vv | 0.8 V | Sí |
valley voltage |
| Wr | 2.7e-20 | no | resonance energy in Ws |
| eta | 1e-20 | no | Fermi energy in Ws |
| dW | 4.5e-21 | no | resonance width in Ws |
| Tmax | 0.95 | no | maximum of transmission |
| de | 0.9 | no | fitting factor for electron density |
| dv | 2.0 | no | fitting factor for voltage drop |
| nv | 16 | no | fitting factor for diode current |
| Cj0 | 80 fF | no | zero-bias depletion capacitance |
| M | 0.5 | no | coeficiente de graduación |
| Vj | 0.5 V | no | potencial de la unión |
| te | 0.6 ps | no | life-time of electrons |
| Temp | 26.85 | no | temperatura de simulación en grados Celsius |
| Area | 1.0 | no | area predeterminada para el diodo |
Verilog-A Devices¶
Hicum L2 V2.1¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | HICUM L2 v2.1 |
Descripción |
Dispositivo Verilog HICUM Level 2 v2.1 |
| Schematic entry | hicumL2V2p1 |
| Netlist entry | T |
Tipo |
AnalogComponent |
| Bitmap file | npnsub_therm |
Propiedades |
101 |
| Category | verilog-a devices |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| c10 | 1.516E-31 | no | Constante GICCR |
| qp0 | 5.939E-15 | no | Carga del hueco de polarización Cero |
| ich | 1.0E11 | no | Corrección de alta corriente para efectos 2D y 3D |
| hfe | 1.0 | no | Factor de ponderación de carga del emisor minoritario en HTBs |
| hfc | 0.03999 | no | Factor de ponderación de carga del colector minoritario en HBTs |
| hjei | 0.435 | no | Factor de ponderación de carga de la unión B-E en HBTs |
| hjci | 0.09477 | no | Factor de ponderación de carga de la unión B-C en HBTs |
| ibeis | 3.47E-20 | no | Corriente interna de saturación B-E |
| mbei | 1.025 | no | Factor ideal de corriente interna B-E |
| ireis | 390E-12 | no | Corriente de saturación de recombinación interna B-E |
| mrei | 3 | no | Factor ideal de corriente de recombinación interna B-E |
| ibeps | 4.18321E-21 | no | Corriente de saturación periférica B-E |
| mbep | 1.045 | no | Factor ideal de corriente periférica B-E |
| ireps | 1.02846E-14 | no | Corriente de saturación de recombinación periférica B-E |
| mrep | 3 | no | Factor ideal de corriente de recombinación periférica B-E |
| mcf | 1.0 | no | Factor no ideal para III-V HBTs |
| ibcis | 3.02613E-18 | no | Corriente de saturación interna B-C |
| mbci | 1.0 | no | Factor ideal de corriente interna B-C |
| ibcxs | 4.576E-29 | no | Corriente de saturación externa B-C |
| mbcx | 1.0 | no | Factor ideal de corriente externa B-C |
| ibets | 0.0 | no | Corriente de saturación de túnel B-E |
| abet | 36.74 | no | Factor exponencial para la corriente de túnel |
| favl | 14.97 | no | Factor de corriente de avalancha |
| qavl | 7.2407E-14 | no | Factor exponencial para la corriente de avalancha |
| alfav | 0.0 | no | TC relativa para FAVL |
| alqav | 0.0 | no | TC relativa para QAVL |
| rbi0 | 7.9 | no | Resistencia de base interna de polarización Cero |
| rbx | 13.15 | no | Resistencia serie de base externa |
| fgeo | 0.724 | no | Factor para la dependencia geométrica de la corriente de avalancha del emisor |
| fdqr0 | 0 | no | Factor de corrección de la modulación por B-E y B-C de la capa de carga espacial |
| fcrbi | 0.0 | no | Porcentaje de desviación HF a la capacidad interna total (efecto lateral NQS) |
| fqi | 1.0 | no | Porcentaje de la carga interna a minoria total |
| re | 9.77 | no | Resistencia serie del emisor |
| rcx | 10 | no | Resistencia serie del colector externo |
| itss | 2.81242E-19 | no | Corriente de saturación de la transferenica sustrato transistor |
| msf | 1.0 | no | Factor ideal directo de la corriente de transferencia del sustrato |
| iscs | 7.6376E-17 | no | Corriente de saturación del diodo C-S |
| msc | 1.0 | no | Factor ideal de la corriente del diodo C-S |
| tsf | 1.733E-8 | no | Tiempo transitorio para la operación directa del sustrato transistor |
| rsu | 800 | no | Resistencia serie del sustrato |
| csu | 1.778E-14 | no | Capacidad desviada del sustrato |
| cjei0 | 5.24382E-14 | no | Capacidad de la unión B-E interna polarizada a cero |
| vdei | 0.9956 | no | Potencial físico de la unión interna B-E |
| zei | 0.4 | no | Coeficiente de graduación interna B-E |
| aljei | 2.5 | no | Porcentaje del valor máximo de polarización de la capacidad B-E interna |
| cjep0 | 0 | no | Capacidad de deflexión periférica B-E polarizada a cero |
| vdep | 1 | no | Potencial de la unión periférica B-E |
| zep | 0.01 | no | Coeficiente del gradiente periférico B-E |
| aljep | 2.5 | no | Porcentaje del valor máximo de polarización de la capacidad B-E periférica |
| cjci0 | 4.46887E-15 | no | Capacidad de la unión B-C interna polarizada a cero |
| vdci | 0.7 | no | Potencial físico de la unión interna B-C |
| zci | 0.38 | no | Coeficiente de graduación interna B-C |
| vptci | 100 | no | Tensión de ruptura interna B-C |
| cjcx0 | 1.55709E-14 | no | Capacidad de la unión B-C externa polarizada a cero |
| vdcx | 0.733 | no | Potencial de la unión externa B-C |
| zcx | 0.34 | no | Coeficiente de graduación externa B-C |
| vptcx | 100 | no | Tensión de ruptura externa B-C |
| fbc | 0.3487 | no | Factor de particionado de la capacidad parásita B-C |
| cjs0 | 17.68E-15 | no | Capacidad de reducción de la unión C-S polarizada a cero |
| vds | 0.621625 | no | Potencial de la unión C-S |
| zs | 0.122136 | no | Coeficiente de graduación C-S |
| vpts | 1000 | no | Tensión de ruptura C-S |
| t0 | 1.28E-12 | no | Tiempo de transición de baja intensidad en directa con VBC=0V |
| dt0h | 260E-15 | no | Constante de tiempo para la base y capa de carga espacial B-C con modulación |
| tbvl | 2.0E-13 | no | Constante de tiempo para modelado de portadora fija con VCE baja |
| tef0 | 0.0 | no | Tiempo de almacenamiento de emisor neutro |
| gtfe | 1.0 | no | Factor exponencial para la dependencia de corriente del tiempo de almacenamiento de emisor neutro |
| thcs | 46E-15 | no | Constante de tiempo de saturación en densidades de corriente altas |
| alhc | 0.08913 | no | Factor de suavizado para la dependencia de corriente del tiempo de transición de base y colector |
| fthc | 0.8778 | no | Factor de particionado para la porción de la base y el colector |
| rci0 | 50.4277 | no | Resistencia interna del colector en campo eléctrico débil |
| vlim | 0.9 | no | Régimen de velocidad de saturación y tensión de separación óhmica |
| vces | 0.01 | no | Tensión de saturación interna C-E |
| vpt | 10 | no | Tensión de ruptura del colector |
| tr | 1.0E-11 | no | Tiempo de almacenamiento para inversa |
| ceox | 1.71992E-15 | no | Capacidad parásita total B-E |
| ccox | 4.9E-15 | no | Capacidad parásita total B-C |
| alqf | 0.1288 | no | Factor para el tiempo de retardo adicional de aminoración de carga |
| alit | 1.0 | no | Factor para el tiempo de retardo adicional de corriente de transferencia |
| kf | 2.83667E-9 | no | Coeficiente de ruido parpadeante |
| af | 2.0 | no | Factor exponencial de ruido parpadeante |
| krbi | 1.0 | no | Factor de ruido para la resistencia de base interna |
| latb | 10.479 | no | Factor de escala para la carga de aminoración del colector en la dirección del ancho del emisor |
| latl | 0.300012 | no | Factor de escala para la carga de aminoración del colector en la dirección del largo del emisor |
| vgb | 1.112 | no | Banda de salto de tensión extrapolada a 0 K |
| alt0 | 0.0017580 | no | TC relativo de primer orden del parámetro T0 |
| kt0 | 4.07E-6 | no | TC relativo de segundo orden del parámetro T0 |
| zetaci | 0.7 | no | Exponente de temperatura para RCI0 |
| zetacx | 1.0 | no | Exponente de mobilidad de la temperatura en el tiempo de transición del sustrato del transistor |
| alvs | 0.001 | no | TC relativa de saturación en la velocidad de deriva |
| alces | 0.000125 | no | TC relativa de VCES |
| zetarbi | 0.0 | no | Exponente de temperatura de la resistencia de base interna |
| zetarbx | 0.2 | no | Exponente de temperatura de la resistencia de base externa |
| zetarcx | 0.21 | no | Exponente de temparatura de la resistencia de colector externa |
| zetare | 0.7 | no | Exponente de temperatura de la resistencia del emisor |
| alb | 0.007 | no | TC relativa de la ganancia de corriente directa para el modelo V2.1 |
| rth | 1293.95 | no | Resistencia térmica |
| cth | 7.22203E-11 | no | Capacidad térmica |
| tnom | 27.0 | no | Temperatura a la que se especifican los parámetros |
| dt | 0.0 | no | Temperature change w.r.t. chip temperature for particular transistor |
| Temp | 27 | no | simulación de temperatura |
Fbh Hbt¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | FBH HBT |
Descripción |
Modelo HBT por Ferdinand-Braun-Institut (FBH), Berlin |
| Schematic entry | HBT_X |
| Netlist entry | T |
Tipo |
AnalogComponent |
| Bitmap file | npn_therm |
Propiedades |
80 |
| Category | verilog-a devices |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Mode | 1 | no | Ignorado |
| Noise | 1 | no | Ignorado |
| Debug | 0 | no | Ignorado |
| DebugPlus | 0 | no | Ignorado |
| Temp | 25.0 | no | Temperatura de operación del dispositivo, Celsius |
| Rth | 0.1 | no | Resistencia térmica, K/W |
| Cth | 700e-9 | no | Capacidad térmica |
| N | 1 | no | Factor de escala, número de dedos emisores |
| L | 30e-6 | no | Longitud del dedo emisor, m |
| W | 1e-6 | no | Anchura del dedo emisor, m |
| Jsf | 20e-24 | no | Densidad de corriente saturada directa, A/um^2 |
| nf | 1.0 | no | Coeficiente de emisión de corriente directa |
| Vg | 1.3 | no | Energía de activación térmica directa, V, (0==deshabilita la dependencia de la temperatura) |
| Jse | 0.0 | no | Densidad de corriente saturada de fuga B-E, A/um^2 |
| ne | 0.0 | no | Coeficiente de emisión de fuga B-E |
| Rbxx | 1e6 | no | Resistencia limitadora del diodo de fuga B-E, Ohm |
| Vgb | 0.0 | no | energía de activación térmica de fuga B-E, V, (0 == deshabilita la dependencia de la temperatura) |
| Jsee | 0.0 | no | 2ª densidad de corriente de saturació de fuga, A/um^2 |
| nee | 0.0 | no | 2º coeficiente de emisión de fuga B-E |
| Rbbxx | 1e6 | no | 2ª resistencia limitadora del diodo de fuga B-E, Ohm |
| Vgbb | 0.0 | no | 2ª energía de activación térmica de fuga B-E, V, (0 == deshabilita la dependencia de la temperatura) |
| Jsr | 20e-18 | no | Densidad de corriente saturada inversa, A/um^2 |
| nr | 1.0 | no | Coeficiente de emisión de corriente inversa |
| Vgr | 0.0 | no | Energía de activación térmica inversa, V, (0==deshabilita la dependencia de la temperatura) |
| XCjc | 0.5 | no | Fracción de Cjc que va al conector interno de la base |
| Jsc | 0.0 | no | Densidad de corriente saturada de fuga B-C, A/um^2 (0 desconecta el diodo) |
| nc | 0.0 | no | Coeficiente de corriente fuga B-C, A/um^2 (0 desconecta el diodo) |
| Rcxx | 1e6 | no | Resistencia limitadora del diodo de fuga B-C, Ohm |
| Vgc | 0.0 | no | Energía de activación térmica de fuga B-C, V, (0 == deshabilita la dependencia de la temperatura) |
| Bf | 100.0 | no | Beta directa ideal |
| kBeta | 0.0 | no | Coeficiente de temperatura de la ganancia de corriente directa, -1/K (0 == deshabilita la depedencia de la temperatura) |
| Br | 1.0 | no | Beta inversa ideal |
| VAF | 0.0 | no | Tensión Early Directa, V. (0 == deshabilita el Efecto Early) |
| VAR | 0.0 | no | Tensión temprana inversa, V (0 == deshabilita el efecto temprano) |
| IKF | 0.0 | no | Forward high-injection knee current, A, (0 == deshabilita el efecto Webster) |
| IKR | 0.0 | no | Reverse high-injection knee current, A, (0 == deshabilita el efecto Webster) |
| Mc | 0.0 | no | Exponente de ruptura C-E, (0 == deshabilita la ruptura del colector) |
| BVceo | 0.0 | no | Tensión de ruptura C-E, (0 == deshabilita la ruptura del colector) |
| kc | 0.0 | no | Factor de ruptura C-E, (0 == deshabilita la ruptura del colector) |
| BVebo | 0.0 | no | Tensión de ruptura B-E, (0 == deshabilita la ruptura del emisor) |
| Tr | 1.0e-15 | no | Tiempo de transitorio inverso ideal, s |
| Trx | 1.0e-15 | no | Capacidad de difusión BC extrínseca, F |
| Tf | 1.0e-12 | no | Tietiempo ideal de tránsito en directa, s |
| Tft | 0.0 | no | Coeficiente de temperatura del tiempo transitorio en directa |
| Thcs | 0.0 | no | Coeficiente del tiempo de transición en exceso en la salida de la base |
| Ahc | 0.0 | no | Parámetro de suavizado para Thcs |
| Cje | 1.0e-15 | no | Capacidad de reducción de polarización cero en B-E, F/um^2 |
| mje | 0.5 | no | Factor exponencial de la unión B-E |
| Vje | 1.3 | no | Potencial interno de la unión B-E, V |
| Cjc | 1.0e-15 | no | Capacidad de reducción de polarización cero en B-C, F/um^2 |
| mjc | 0.5 | no | factor exponencial unión B-C |
| Vjc | 1.3 | no | Potencial interno de la unión B-C, V |
| kjc | 1.0 | no | no usado |
| Cmin | 0.1e-15 | no | Capacidad de reducción B-C mínima (dependiente de Vbc), F/um^2 |
| J0 | 1e-3 | no | Corriente de colector cuando Cbc alcanza Cmin, A/um^2 (0 == deshabilita la reducción Cbc) |
| XJ0 | 1.0 | no | Fracción de Cmin, límite inferior de la capacidad BC (dependiente de lc) |
| Rci0 | 1e-3 | no | Llegada de la salida de base a tensiones bajas, Ohm*um^2 (0 == deshabilita la salida de base) |
| Jk | 4e-4 | no | Llegada de la salida de base a tensiones altas, Ohm*um^2 (0 == deshabilita la salida de base) |
| RJk | 1e-3 | no | Pendiente de JK en corrientes grandes , Ohm*um^2 |
| Vces | 1e-3 | no | Desplazamiento de tensión al llegar la salida de base, V |
| Rc | 1.0 | no | Resistencia del colector, Ohm/finger |
| Re | 1.0 | no | Resistencia del emisor, Ohm/finger |
| Rb | 1.0 | no | Resistencia de la base extrínseca, Ohm/finger |
| Rb2 | 1.0 | no | Resistencia óhmica de la base interna, Ohm/finger |
| Lc | 0.0 | no | Inductancia del colector, H |
| Le | 0.0 | no | Inductancia del emisor, H |
| Lb | 0.0 | no | Inductancia de la base, H |
| Cq | 0.0 | no | Capacidad de B-C extrínseca, F |
| Cpb | 0.0 | no | Capacidad de la base extrínseca, F |
| Cpc | 0.0 | no | Capacidad del colector extrínseca, F |
| Kfb | 0.0 | no | coeficiente de ruido de parpadeo |
| Afb | 0.0 | no | exponente de ruido de parpadeo |
| Ffeb | 0.0 | no | exponente de la frecuencia del ruido de parpadeo |
| Kb | 0.0 | no | Coeficiente de ruido de ráfaga |
| Ab | 0.0 | no | Exponente del ruido de ráfaga |
| Fb | 0.0 | no | Frecuencia de esquina del ruido de ráfaga, Hz |
| Kfe | 0.0 | no | coeficiente de ruido de parpadeo |
| Afe | 0.0 | no | exponente de ruido de parpadeo |
| Ffee | 0.0 | no | exponente de la frecuencia del ruido de parpadeo |
| Tnom | 20.0 | no | Temperatura ambiente en la que se determinan los parámetros |
Modular Opamp¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | AmpOp modular |
Descripción |
Componente verilog amplificador operacional modular |
| Schematic entry | mod_amp |
| Netlist entry | OP |
Tipo |
AnalogComponent |
| Bitmap file | mod_amp |
Propiedades |
17 |
| Category | verilog-a devices |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| GBP | 1e6 | no | Producto de la ganancia del ancho de banda (Hz) |
| AOLDC | 106.0 | no | Ganancia diferencial en bucle abierto en CC (dB) |
| FP2 | 3e6 | no | Segundo polo de frecuencia (Hz) |
| RO | 75 | no | Resistencia de salida (Ohm) |
| CD | 1e-12 | no | Capacidad de entrada diferencial (F) |
| RD | 2e6 | no | Resistencia de entrada diferencial (Ohm) |
| IOFF | 20e-9 | no | Corriente de offset de entrada (A) |
| IB | 80e-9 | no | Corriente de polarización de entrada (A) |
| VOFF | 7e-4 | no | Tensión de offset de entrada (V) |
| CMRRDC | 90.0 | no | Razón de rechazo en modo común en CC (dB) |
| FCM | 200.0 | no | Esquina de frecuencia cero en modo común (Hz) |
| PSRT | 5e5 | no | Rapidez de respuesta positiva (V/s) |
| NSRT | 5e5 | no | Rapidez de respuesta negativa (V/s) |
| VLIMP | 14 | no | Límite de la tensión de salida positiva (V) |
| VLIMN | -14 | no | Límite de la tensión de salida negativa (V) |
| ILMAX | 35e-3 | no | Corriente continua de salida máxima (A) |
| CSCALE | 50 | no | Corriente límite del factor de escala |
Hicum L2 V2.22¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Transistores HICUM L2 v2.22 |
Descripción |
Dispositivo Verilog HICUM Level 2 v2.22 |
| Schematic entry | hic2_full |
| Netlist entry | T |
Tipo |
AnalogComponent |
| Bitmap file | npnsub_therm |
Propiedades |
114 |
| Category | verilog-a devices |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| c10 | 2.0E-30 | no | GICCR constant (A^2s) |
| qp0 | 2.0E-14 | no | Zero-bias hole charge (Coul) |
| ich | 0.0 | no | High-current correction for 2D and 3D effects (A) |
| hfe | 1.0 | no | Factor de ponderación de carga del emisor minoritario en HTBs |
| hfc | 1.0 | no | Factor de ponderación de carga del colector minoritario en HBTs |
| hjei | 1.0 | no | Factor de ponderación de carga de la unión B-E en HBTs |
| hjci | 1.0 | no | Factor de ponderación de carga de la unión B-C en HBTs |
| ibeis | 1.0E-18 | no | Internal B-E saturation current (A) |
| mbei | 1.0 | no | Factor ideal de corriente interna B-E |
| ireis | 0.0 | no | Internal B-E recombination saturation current (A) |
| mrei | 2.0 | no | Factor ideal de corriente de recombinación interna B-E |
| ibeps | 0.0 | no | Peripheral B-E saturation current (A) |
| mbep | 1.0 | no | Factor ideal de corriente periférica B-E |
| ireps | 0.0 | no | Peripheral B-E recombination saturation current (A) |
| mrep | 2.0 | no | Factor ideal de corriente de recombinación periférica B-E |
| mcf | 1.0 | no | Factor no ideal para III-V HBTs |
| tbhrec | 0.0 | no | Base current recombination time constant at B-C barrier for high forward injection (s) |
| ibcis | 1.0E-16 | no | Internal B-C saturation current (A) |
| mbci | 1.0 | no | Factor ideal de corriente interna B-C |
| ibcxs | 0.0 | no | External B-C saturation current (A) |
| mbcx | 1.0 | no | Factor ideal de corriente externa B-C |
| ibets | 0.0 | no | B-E tunneling saturation current (A) |
| abet | 40 | no | Factor exponencial para la corriente de túnel |
| tunode | 1 | no | Especifica el nodo de conexión de base para la corriente de efecto túnel |
| favl | 0.0 | no | Avalanche current factor (1/V) |
| qavl | 0.0 | no | Exponent factor for avalanche current (Coul) |
| alfav | 0.0 | no | Relative TC for FAVL (1/K) |
| alqav | 0.0 | no | Relative TC for QAVL (1/K) |
| rbi0 | 0.0 | no | Zero bias internal base resistance (Ohm) |
| rbx | 0.0 | no | External base series resistance (Ohm) |
| fgeo | 0.6557 | no | Factor para la dependencia geométrica de la corriente de avalancha del emisor |
| fdqr0 | 0.0 | no | Factor de corrección de la modulación por B-E y B-C de la capa de carga espacial |
| fcrbi | 0.0 | no | Porcentaje de desviación HF a la capacidad interna total (efecto lateral NQS) |
| fqi | 1.0 | no | Porcentaje de la carga interna a minoria total |
| re | 0.0 | no | Emitter series resistance (Ohm) |
| rcx | 0.0 | no | External collector series resistance (Ohm) |
| itss | 0.0 | no | Substrate transistor transfer saturation current (A) |
| msf | 1.0 | no | Factor ideal directo de la corriente de transferencia del sustrato |
| iscs | 0.0 | no | C-S diode saturation current (A) |
| msc | 1.0 | no | Factor ideal de la corriente del diodo C-S |
| tsf | 0.0 | no | Transit time for forward operation of substrate transistor (s) |
| rsu | 0.0 | no | Substrate series resistance (Ohm) |
| csu | 0.0 | no | Substrate shunt capacitance (F) |
| cjei0 | 1.0E-20 | no | Internal B-E zero-bias depletion capacitance (F) |
| vdei | 0.9 | no | Internal B-E built-in potential (V) |
| zei | 0.5 | no | Coeficiente de graduación interna B-E |
| ajei | 2.5 | no | Porcentaje del valor máximo de polarización de la capacidad B-E interna |
| cjep0 | 1.0E-20 | no | Peripheral B-E zero-bias depletion capacitance (F) |
| vdep | 0.9 | no | Peripheral B-E built-in potential (V) |
| zep | 0.5 | no | Coeficiente del gradiente periférico B-E |
| ajep | 2.5 | no | Porcentaje del valor máximo de polarización de la capacidad B-E periférica |
| cjci0 | 1.0E-20 | no | Internal B-C zero-bias depletion capacitance (F) |
| vdci | 0.7 | no | Internal B-C built-in potential (V) |
| zci | 0.4 | no | Coeficiente de graduación interna B-C |
| vptci | 100 | no | Internal B-C punch-through voltage (V) |
| cjcx0 | 1.0E-20 | no | External B-C zero-bias depletion capacitance (F) |
| vdcx | 0.7 | no | External B-C built-in potential (V) |
| zcx | 0.4 | no | Coeficiente de graduación externa B-C |
| vptcx | 100 | no | External B-C punch-through voltage (V) |
| fbcpar | 0.0 | no | Factor de particionado de la capacidad parásita en la unión B-C |
| fbepar | 1.0 | no | Factor de particionado de la capacidad parásita en la unión B-E |
| cjs0 | 0.0 | no | C-S zero-bias depletion capacitance (F) |
| vds | 0.6 | no | C-S built-in potential (V) |
| zs | 0.5 | no | Coeficiente de graduación C-S |
| vpts | 100 | no | C-S punch-through voltage (V) |
| t0 | 0.0 | no | Low current forward transit time at VBC=0V (s) |
| dt0h | 0.0 | no | Time constant for base and B-C space charge layer width modulation (s) |
| tbvl | 0.0 | no | Time constant for modelling carrier jam at low VCE (s) |
| tef0 | 0.0 | no | Neutral emitter storage time (s) |
| gtfe | 1.0 | no | Factor exponencial para la dependencia de corriente del tiempo de almacenamiento de emisor neutro |
| thcs | 0.0 | no | Saturation time constant at high current densities (s) |
| ahc | 0.1 | no | Factor de suavizado para la dependencia de corriente del tiempo de transición de base y colector |
| fthc | 0.0 | no | Factor de particionado para la porción de la base y el colector |
| rci0 | 150 | no | Internal collector resistance at low electric field (Ohm) |
| vlim | 0.5 | no | Voltage separating ohmic and saturation velocity regime (V) |
| vces | 0.1 | no | Internal C-E saturation voltage (V) |
| vpt | 0.0 | no | Collector punch-through voltage (V) |
| tr | 0.0 | no | Storage time for inverse operation (s) |
| cbepar | 0.0 | no | Total parasitic B-E capacitance (F) |
| cbcpar | 0.0 | no | Total parasitic B-C capacitance (F) |
| alqf | 0.0 | no | Factor para el tiempo de retardo adicional de aminoración de carga |
| alit | 0.0 | no | Factor para el tiempo de retardo adicional de corriente de transferencia |
| flnqs | 0 | no | Marca de inflexión ON/OFF de efecto vertical NQS |
| kf | 0.0 | no | Coeficiente de ruido parpadeante |
| af | 2.0 | no | Factor exponencial de ruido parpadeante |
| cfbe | -1 | no | Marca para determinar la etiqueta de la fuente de ruido de parpadeo |
| latb | 0.0 | no | Factor de escala para la carga de aminoración del colector en la dirección del ancho del emisor |
| latl | 0.0 | no | Factor de escala para la carga de aminoración del colector en la dirección del largo del emisor |
| vgb | 1.17 | no | Bandgap voltage extrapolated to 0 K (V) |
| alt0 | 0.0 | no | First order relative TC of parameter T0 (1/K) |
| kt0 | 0.0 | no | TC relativo de segundo orden del parámetro T0 |
| zetaci | 0.0 | no | Exponente de temperatura para RCI0 |
| alvs | 0.0 | no | Relative TC of saturation drift velocity (1/K) |
| alces | 0.0 | no | Relative TC of VCES (1/K) |
| zetarbi | 0.0 | no | Exponente de temperatura de la resistencia de base interna |
| zetarbx | 0.0 | no | Exponente de temperatura de la resistencia de base externa |
| zetarcx | 0.0 | no | Exponente de temparatura de la resistencia de colector externa |
| zetare | 0.0 | no | Exponente de temperatura de la resistencia del emisor |
| zetacx | 1.0 | no | Exponente de mobilidad de la temperatura en el tiempo de transición del sustrato del transistor |
| vge | 1.17 | no | Effective emitter bandgap voltage (V) |
| vgc | 1.17 | no | Effective collector bandgap voltage (V) |
| vgs | 1.17 | no | Effective substrate bandgap voltage (V) |
| f1vg | -1.02377e-4 | no | Ecuación de salto de banda del coeficiente K1 en función de T |
| f2vg | 4.3215e-4 | no | Ecuación de salto de banda del coeficiente K2 en función de T |
| zetact | 3.0 | no | Coeficiente exponencial de transferencia de corriente en función de la temperatura |
| zetabet | 3.5 | no | Coeficiente exponencial de corriente en la unióm B-E en función de la temperatura |
| alb | 0.0 | no | Relative TC of forward current gain for V2.1 model (1/K) |
| flsh | 0 | no | Marca de inflexión ON/OFF del efecto de auto-calentamiento |
| rth | 0.0 | no | Thermal resistance (K/W) |
| cth | 0.0 | no | Thermal capacitance (J/W) |
| flcomp | 0.0 | no | Marca par la compatibilidad con el modelo v2.1 (0=v2.1) |
| tnom | 27.0 | no | Temperature at which parameters are specified (C) |
| dt | 0.0 | no | Temperature change w.r.t. chip temperature for particular transistor (K) |
| Temp | 27 | no | simulación de temperatura |
Amplificador logarítmico¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Amplificador logarítmico |
Descripción |
Componente verilog amplificador logarítmico |
| Schematic entry | log_amp |
| Netlist entry | LA |
Tipo |
AnalogComponent |
| Bitmap file | log_amp |
Propiedades |
17 |
| Category | verilog-a devices |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Kv | 1.0 | no | factor de escala |
| Dk | 0.3 | no | scale factor error (%) |
| Ib1 | 5e-12 | no | input I1 bias current (A) |
| Ibr | 5e-12 | no | input reference bias current (A) |
| M | 5 | no | número de décadas |
| N | 0.1 | no | conformity error (%) |
| Vosout | 3e-3 | no | output offset error (V) |
| Rinp | 1e6 | no | amplifier input resistance (Ohm) |
| Fc | 1e3 | no | amplifier 3dB frequency (Hz) |
| Ro | 1e-3 | no | amplifier output resistance (Ohm) |
| Ntc | 0.002 | no | conformity error temperature coefficient (%/Celsius) |
| Vosouttc | 80e-6 | no | offset temperature coefficient (V/Celsius) |
| Dktc | 0.03 | no | scale factor error temperature coefficient (%/Celsius) |
| Ib1tc | 0.5e-12 | no | input I1 bias current temperature coefficient (A/Celsius) |
| Ibrtc | 0.5e-12 | no | input reference bias current temperature coefficient (A/Celsius) |
| Tnom | 26.85 | no | parameter measurement temperature (Celsius) |
| Temp | 26.85 | no | simulación de temperatura |
Npn Hicum L0 V1.12¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | npn HICUM L0 v1.12 |
Descripción |
Componente verilog HICUM Level 0 v1.12 |
| Schematic entry | hic0_full |
| Netlist entry | T |
Tipo |
AnalogComponent |
| Bitmap file | npnsub_therm |
Propiedades |
86 |
| Category | verilog-a devices |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
Tipo |
npn | Sí |
polarity [npn, pnp] |
| is | 1.0e-16 | no | (Modified) saturation current (A) |
| mcf | 1.00 | no | Coeficiente no ideal de la corriente directa de colector |
| mcr | 1.00 | no | Coeficiente no ideal de la corriente inversa de colector |
| vef | 1.0e6 | no | forward Early voltage (normalization volt.) (V) |
| iqf | 1.0e6 | no | forward d.c. high-injection roll-off current (A) |
| iqr | 1.0e6 | no | inverse d.c. high-injection roll-off current (A) |
| iqfh | 1.0e6 | no | high-injection correction current (A) |
| tfh | 1.0e6 | no | factor de corrección de alta inyección |
| ibes | 1e-18 | no | BE saturation current (A) |
| mbe | 1.0 | no | factor no ideal BE |
| ires | 0.0 | no | BE recombination saturation current (A) |
| mre | 2.0 | no | factor no ideal de recombinación BE |
| ibcs | 0.0 | no | BC saturation current (A) |
| mbc | 1.0 | no | factor no ideal BC |
| cje0 | 1.0e-20 | no | Zero-bias BE depletion capacitance (F) |
| vde | 0.9 | no | BE built-in voltage (V) |
| ze | 0.5 | no | factor exponencial BE |
| aje | 2.5 | no | Razón de máximo a valor de polarización cero |
| t0 | 0.0 | no | low current transit time at Vbici=0 (s) |
| dt0h | 0.0 | no | Base width modulation contribution (s) |
| tbvl | 0.0 | no | SCR width modulation contribution (s) |
| tef0 | 0.0 | no | Storage time in neutral emitter (s) |
| gte | 1.0 | no | Exponent factor for emitter transit time |
| thcs | 0.0 | no | Saturation time at high current densities (s) |
| ahc | 0.1 | no | Smoothing factor for current dependence |
| tr | 0.0 | no | Storage time at inverse operation (s) |
| rci0 | 150 | no | Low-field collector resistance under emitter (Ohm) |
| vlim | 0.5 | no | Voltage dividing ohmic and satur.region (V) |
| vpt | 100 | no | Punch-through voltage (V) |
| vces | 0.1 | no | Saturation voltage (V) |
| cjci0 | 1.0e-20 | no | Total zero-bias BC depletion capacitance (F) |
| vdci | 0.7 | no | BC built-in voltage (V) |
| zci | 0.333 | no | factor exponencial BC |
| vptci | 100 | no | Punch-through voltage of BC junction (V) |
| cjcx0 | 1.0e-20 | no | Zero-bias external BC depletion capacitance (F) |
| vdcx | 0.7 | no | External BC built-in voltage (V) |
| zcx | 0.333 | no | Factor exponencial externo de la unión BC |
| vptcx | 100 | no | Punch-through voltage (V) |
| fbc | 1.0 | no | Factor de separación = Cjci0/Cjc0 |
| rbi0 | 0.0 | no | Internal base resistance at zero-bias (Ohm) |
| vr0e | 2.5 | no | forward Early voltage (normalization volt.) (V) |
| vr0c | 1.0e6 | no | forward Early voltage (normalization volt.) (V) |
| fgeo | 0.656 | no | Factor de geometría |
| rbx | 0.0 | no | External base series resistance (Ohm) |
| rcx | 0.0 | no | Emitter series resistance (Ohm) |
| re | 0.0 | no | External collector series resistance (Ohm) |
| itss | 0.0 | no | Substrate transistor transfer saturation current (A) |
| msf | 1.0 | no | Factor no ideal de transferencia del sustrato de transistor |
| iscs | 0.0 | no | SC saturation current (A) |
| msc | 1.0 | no | Factor no ideal SC |
| cjs0 | 1.0e-20 | no | Zero-bias SC depletion capacitance (F) |
| vds | 0.3 | no | SC built-in voltage (V) |
| zs | 0.3 | no | Factor exponencial externo de la unión SC |
| vpts | 100 | no | SC punch-through voltage (V) |
| cbcpar | 0.0 | no | Collector-base isolation (overlap) capacitance (F) |
| cbepar | 0.0 | no | Emitter-base oxide capacitance (F) |
| eavl | 0.0 | no | Factor exponencial |
| kavl | 0.0 | no | Prefactor |
| kf | 0.0 | no | flicker noise coefficient (M^(1-AF)) |
| af | 2.0 | no | factor exponencial de ruido de centelleo |
| vgb | 1.2 | no | Bandgap-voltage (V) |
| vge | 1.17 | no | Effective emitter bandgap-voltage (V) |
| vgc | 1.17 | no | Effective collector bandgap-voltage (V) |
| vgs | 1.17 | no | Effective substrate bandgap-voltage (V) |
| f1vg | -1.02377e-4 | no | Coefficient K1 in T-dependent bandgap equation (V/K) |
| f2vg | 4.3215e-4 | no | Coefficient K2 in T-dependent bandgap equation (V/K) |
| alt0 | 0.0 | no | Frist-order TC of tf0 (1/K) |
| kt0 | 0.0 | no | Second-order TC of tf0 (1/K^2) |
| zetact | 3.0 | no | Coeficiente exponencial de transferencia de corriente en función de la temperatura |
| zetabet | 3.5 | no | Coeficiente exponencial en función de la temperatura en la corriente de la unión BE |
| zetaci | 0.0 | no | TC de difusividad epi-colector |
| alvs | 0.0 | no | Relative TC of satur.drift velocity (1/K) |
| alces | 0.0 | no | Relative TC of vces (1/K) |
| zetarbi | 0.0 | no | TC de la resistencia interna de base |
| zetarbx | 0.0 | no | TC de la resistencia externa de base |
| zetarcx | 0.0 | no | TC de la resistencia externa de colector |
| zetare | 0.0 | no | TC de resistencias de emisor |
| alkav | 0.0 | no | TC of avalanche prefactor (1/K) |
| aleav | 0.0 | no | TC of avalanche exponential factor (1/K) |
| flsh | 0 | no | Marcador para el cálculo del autocalentamiento |
| rth | 0.0 | no | Thermal resistance (K/W) |
| cth | 0.0 | no | Thermal capacitance (Ws/K) |
| tnom | 27 | no | Temperature for which parameters are valid (C) |
| dt | 0.0 | no | Temperature change for particular transistor (K) |
| Temp | 26.85 | no | simulación de temperatura |
Pnp Hicum L0 V1.12¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | pnp HICUM L0 v1.12 |
Descripción |
Componente verilog HICUM Level 0 v1.12 |
| Schematic entry | hic0_full |
| Netlist entry | T |
Tipo |
AnalogComponent |
| Bitmap file | pnpsub_therm |
Propiedades |
86 |
| Category | verilog-a devices |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
Tipo |
pnp | Sí |
polarity [npn, pnp] |
| is | 1.0e-16 | no | (Modified) saturation current (A) |
| mcf | 1.00 | no | Coeficiente no ideal de la corriente directa de colector |
| mcr | 1.00 | no | Coeficiente no ideal de la corriente inversa de colector |
| vef | 1.0e6 | no | forward Early voltage (normalization volt.) (V) |
| iqf | 1.0e6 | no | forward d.c. high-injection roll-off current (A) |
| iqr | 1.0e6 | no | inverse d.c. high-injection roll-off current (A) |
| iqfh | 1.0e6 | no | high-injection correction current (A) |
| tfh | 1.0e6 | no | factor de corrección de alta inyección |
| ibes | 1e-18 | no | BE saturation current (A) |
| mbe | 1.0 | no | factor no ideal BE |
| ires | 0.0 | no | BE recombination saturation current (A) |
| mre | 2.0 | no | factor no ideal de recombinación BE |
| ibcs | 0.0 | no | BC saturation current (A) |
| mbc | 1.0 | no | factor no ideal BC |
| cje0 | 1.0e-20 | no | Zero-bias BE depletion capacitance (F) |
| vde | 0.9 | no | BE built-in voltage (V) |
| ze | 0.5 | no | factor exponencial BE |
| aje | 2.5 | no | Razón de máximo a valor de polarización cero |
| t0 | 0.0 | no | low current transit time at Vbici=0 (s) |
| dt0h | 0.0 | no | Base width modulation contribution (s) |
| tbvl | 0.0 | no | SCR width modulation contribution (s) |
| tef0 | 0.0 | no | Storage time in neutral emitter (s) |
| gte | 1.0 | no | Exponent factor for emitter transit time |
| thcs | 0.0 | no | Saturation time at high current densities (s) |
| ahc | 0.1 | no | Smoothing factor for current dependence |
| tr | 0.0 | no | Storage time at inverse operation (s) |
| rci0 | 150 | no | Low-field collector resistance under emitter (Ohm) |
| vlim | 0.5 | no | Voltage dividing ohmic and satur.region (V) |
| vpt | 100 | no | Punch-through voltage (V) |
| vces | 0.1 | no | Saturation voltage (V) |
| cjci0 | 1.0e-20 | no | Total zero-bias BC depletion capacitance (F) |
| vdci | 0.7 | no | BC built-in voltage (V) |
| zci | 0.333 | no | factor exponencial BC |
| vptci | 100 | no | Punch-through voltage of BC junction (V) |
| cjcx0 | 1.0e-20 | no | Zero-bias external BC depletion capacitance (F) |
| vdcx | 0.7 | no | External BC built-in voltage (V) |
| zcx | 0.333 | no | Factor exponencial externo de la unión BC |
| vptcx | 100 | no | Punch-through voltage (V) |
| fbc | 1.0 | no | Factor de separación = Cjci0/Cjc0 |
| rbi0 | 0.0 | no | Internal base resistance at zero-bias (Ohm) |
| vr0e | 2.5 | no | forward Early voltage (normalization volt.) (V) |
| vr0c | 1.0e6 | no | forward Early voltage (normalization volt.) (V) |
| fgeo | 0.656 | no | Factor de geometría |
| rbx | 0.0 | no | External base series resistance (Ohm) |
| rcx | 0.0 | no | Emitter series resistance (Ohm) |
| re | 0.0 | no | External collector series resistance (Ohm) |
| itss | 0.0 | no | Substrate transistor transfer saturation current (A) |
| msf | 1.0 | no | Factor no ideal de transferencia del sustrato de transistor |
| iscs | 0.0 | no | SC saturation current (A) |
| msc | 1.0 | no | Factor no ideal SC |
| cjs0 | 1.0e-20 | no | Zero-bias SC depletion capacitance (F) |
| vds | 0.3 | no | SC built-in voltage (V) |
| zs | 0.3 | no | Factor exponencial externo de la unión SC |
| vpts | 100 | no | SC punch-through voltage (V) |
| cbcpar | 0.0 | no | Collector-base isolation (overlap) capacitance (F) |
| cbepar | 0.0 | no | Emitter-base oxide capacitance (F) |
| eavl | 0.0 | no | Factor exponencial |
| kavl | 0.0 | no | Prefactor |
| kf | 0.0 | no | flicker noise coefficient (M^(1-AF)) |
| af | 2.0 | no | factor exponencial de ruido de centelleo |
| vgb | 1.2 | no | Bandgap-voltage (V) |
| vge | 1.17 | no | Effective emitter bandgap-voltage (V) |
| vgc | 1.17 | no | Effective collector bandgap-voltage (V) |
| vgs | 1.17 | no | Effective substrate bandgap-voltage (V) |
| f1vg | -1.02377e-4 | no | Coefficient K1 in T-dependent bandgap equation (V/K) |
| f2vg | 4.3215e-4 | no | Coefficient K2 in T-dependent bandgap equation (V/K) |
| alt0 | 0.0 | no | Frist-order TC of tf0 (1/K) |
| kt0 | 0.0 | no | Second-order TC of tf0 (1/K^2) |
| zetact | 3.0 | no | Coeficiente exponencial de transferencia de corriente en función de la temperatura |
| zetabet | 3.5 | no | Coeficiente exponencial en función de la temperatura en la corriente de la unión BE |
| zetaci | 0.0 | no | TC de difusividad epi-colector |
| alvs | 0.0 | no | Relative TC of satur.drift velocity (1/K) |
| alces | 0.0 | no | Relative TC of vces (1/K) |
| zetarbi | 0.0 | no | TC de la resistencia interna de base |
| zetarbx | 0.0 | no | TC de la resistencia externa de base |
| zetarcx | 0.0 | no | TC de la resistencia externa de colector |
| zetare | 0.0 | no | TC de resistencias de emisor |
| alkav | 0.0 | no | TC of avalanche prefactor (1/K) |
| aleav | 0.0 | no | TC of avalanche exponential factor (1/K) |
| flsh | 0 | no | Marcador para el cálculo del autocalentamiento |
| rth | 0.0 | no | Thermal resistance (K/W) |
| cth | 0.0 | no | Thermal capacitance (Ws/K) |
| tnom | 27 | no | Temperature for which parameters are valid (C) |
| dt | 0.0 | no | Temperature change for particular transistor (K) |
| Temp | 26.85 | no | simulación de temperatura |
Potenciómetro¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Potenciómetro |
Descripción |
Componente verilog potenciómetro |
| Schematic entry | potentiometer |
| Netlist entry | POT |
Tipo |
AnalogComponent |
| Bitmap file | potentiometer |
Propiedades |
11 |
| Category | verilog-a devices |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| R_pot | 1e4 | no | nominal device resistance (Ohm) |
| Rotation | 120 | no | shaft/wiper arm rotation (degrees) |
| Taper_Coeff | 0 | no | coeficiente taper de la ley de resistencia |
| LEVEL | 1 | no | device type selector [1, 2, 3] |
| Max_Rotation | 240.0 | no | maximum shaft/wiper rotation (degrees) |
| Conformity | 0.2 | no | conformity error (%) |
| Linearity | 0.2 | no | linearity error (%) |
| Contact_Res | 1 | no | wiper arm contact resistance (Ohm) |
| Temp_Coeff | 100 | no | resistance temperature coefficient (PPM/Celsius) |
| Tnom | 26.85 | no | parameter measurement temperature (Celsius) |
| Temp | 26.85 | no | simulación de temperatura |
Mesfet¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | MESFET |
Descripción |
Componente verilog MESFET |
| Schematic entry | MESFET |
| Netlist entry | T |
Tipo |
AnalogComponent |
| Bitmap file | MESFET |
Propiedades |
52 |
| Category | verilog-a devices |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| LEVEL | 1 | no | selector de modelo |
| Vto | -1.8 | no | pinch-off voltage (V) |
| Beta | 3e-3 | no | transconductance parameter (A/(V*V)) |
| Alpha | 2.25 | no | saturation voltage parameter (1/V) |
| Lambda | 0.05 | no | channel length modulation parameter (1/V) |
| B | 0.3 | no | doping profile parameter (1/V) |
| Qp | 2.1 | no | parámetro exponencial de la ley de potencia |
| Delta | 0.1 | no | power feedback parameter (1/W) |
| Vmax | 0.5 | no | maximum junction voltage limit before capacitance limiting (V) |
| Vdelta1 | 0.3 | no | capacitance saturation transition voltage (V) |
| Vdelta2 | 0.2 | no | capacitance threshold transition voltage (V) |
| Gamma | 0.015 | no | coeficiente pull del drenador en cc |
| Nsc | 1 | no | parámetro de capacidad umbral |
| Is | 1e-14 | no | diode saturation current (I) |
| N | 1 | no | coeficiente de emisión del diodo |
| Vbi | 1.0 | no | built-in gate potential (V) |
| Bv | 60 | no | gate-drain junction reverse bias breakdown voltage (V) |
| Xti | 3.0 | no | coeficiente de temperatura de la corriente de saturación del diodo |
| Fc | 0.5 | no | coeficiente de pérdida de capacidad en polarización directa |
| Tau | 1e-9 | no | transit time under gate (s) |
| Rin | 1e-3 | no | channel resistance (Ohm) |
| Area | 1 | no | factor área |
| Eg | 1.11 | no | energy gap (eV) |
| M | 0.5 | no | coeficiente de graduación |
| Cgd | 0.2e-12 | no | zero bias gate-drain junction capacitance (F) |
| Cgs | 1e-12 | no | zero bias gate-source junction capacitance (F) |
| Cds | 1e-12 | no | zero bias drain-source junction capacitance (F) |
| Betatc | 0 | no | Beta temperature coefficient (%/Celsius) |
| Alphatc | 0 | no | Alpha temperature coefficient (%/Celsius) |
| Gammatc | 0 | no | Gamma temperature coefficient (%/Celsius) |
| Ng | 2.65 | no | Parámetro preumbral de pendiente de puerta |
| Nd | -0.19 | no | Parámetro preumbral pull de drenador |
| ILEVELS | 3 | no | Selector de ecuación de la corriente puerta-fuente |
| ILEVELD | 3 | no | Selector de ecuación de la corriente puerta-drenador |
| QLEVELS | 2 | no | Selector de ecuación de carga puerta-fuente |
| QLEVELD | 2 | no | Selector de ecuación de carga puerta-drenador |
| QLEVELDS | 2 | no | Selector de ecuación de carga drenador-fuente |
| Vtotc | 0 | no | Vto temperature coefficient |
| Rg | 5.1 | no | gate resistance (Ohms) |
| Rd | 1.3 | no | drain resistance (Ohms) |
| Rs | 1.3 | no | source resistance (Ohms) |
| Rgtc | 0 | no | gate resistance temperature coefficient (1/Celsius) |
| Rdtc | 0 | no | drain resistance temperature coefficient (1/Celsius) |
| Rstc | 0 | no | source resistance temperature coefficient (1/Celsius) |
| Ibv | 1e-3 | no | gate reverse breakdown currrent (A) |
| Rf | 10 | no | forward bias slope resistance (Ohms) |
| R1 | 10 | no | breakdown slope resistance (Ohms) |
| Af | 1 | no | exponente de ruido térmico |
| Kf | 0 | no | coeficiente de ruido térmico |
| Gdsnoi | 1 | no | coeficiente de ruido de descarga |
| Tnom | 26.85 | no | parameter measurement temperature (Celsius) |
| Temp | 26.85 | no | simulación de temperatura |
Epfl-Ekv Nmos 2.6¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | EPFL-EKV NMOS 2.6 |
Descripción |
EPFL-EKV MOS 2.6 verilog device |
| Schematic entry | EKV26MOS |
| Netlist entry | M |
Tipo |
AnalogComponent |
| Bitmap file | EKV26nMOS |
Propiedades |
55 |
| Category | verilog-a devices |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
Tipo |
nmos | Sí |
polarity [nmos, pmos] |
| LEVEL | 1 | no | long = 1, short = 2 |
| L | 0.5e-6 | no | length parameter (m) |
| W | 10e-6 | no | Width parameter (m) |
| Np | 1.0 | no | parallel multiple device number |
| Ns | 1.0 | no | series multiple device number |
| Cox | 3.45e-3 | no | gate oxide capacitance per unit area (F/m**2) |
| Xj | 0.15e-6 | no | metallurgical junction depth (m) |
| Dw | -0.02e-6 | no | channel width correction (m) |
| Dl | -0.05e-6 | no | channel length correction (m) |
| Vto | 0.6 | no | long channel threshold voltage (V) |
| Gamma | 0.71 | no | body effect parameter (V**(1/2)) |
| Phi | 0.97 | no | bulk Fermi potential (V) |
| Kp | 150e-6 | no | transconductance parameter (A/V**2) |
| Theta | 50e-3 | no | mobility reduction coefficient (1/V) |
| EO | 88.0e6 | no | mobility coefficient (V/m) |
| Ucrit | 4.5e6 | no | longitudinal critical field (V/m) |
| Lambda | 0.23 | no | depletion length coefficient |
| Weta | 0.05 | no | narrow-channel effect coefficient |
| Leta | 0.28 | no | longitudinal critical field |
| Q0 | 280e-6 | no | reverse short channel charge density (A*s/m**2) |
| Lk | 0.5e-6 | no | characteristic length (m) |
| Tcv | 1.5e-3 | no | threshold voltage temperature coefficient (V/K) |
| Bex | -1.5 | no | mobility temperature coefficient |
| Ucex | 1.7 | no | Longitudinal critical field temperature exponent |
| Ibbt | 0.0 | no | Ibb temperature coefficient (1/K) |
| Hdif | 0.9e-6 | no | heavily doped diffusion length (m) |
| Rsh | 510.0 | no | drain/source diffusion sheet resistance (Ohm/square) |
| Rsc | 0.0 | no | source contact resistance (Ohm) |
| Rdc | 0.0 | no | drain contact resistance (Ohm) |
| Cgso | 1.5e-10 | no | gate to source overlap capacitance (F/m) |
| Cgdo | 1.5e-10 | no | gate to drain overlap capacitance (F/m) |
| Cgbo | 4.0e-10 | no | gate to bulk overlap capacitance (F/m) |
| Iba | 2e8 | no | first impact ionization coefficient (1/m) |
| Ibb | 3.5e8 | no | second impact ionization coefficient (V/m) |
| Ibn | 1.0 | no | saturation voltage factor for impact ionization |
| Kf | 1.0e-27 | no | coeficiente de ruido térmico |
| Af | 1.0 | no | exponente de ruido térmico |
| Avto | 0.0 | no | area related theshold voltage mismatch parameter (V*m) |
| Akp | 0.0 | no | area related gain mismatch parameter (m) |
| Agamma | 0.0 | no | area related body effect mismatch parameter (sqrt(V)*m) |
| N | 1.0 | no | coeficiente de emisión |
| Is | 1e-14 | no | saturation current (A) |
| Bv | 100 | no | reverse breakdown voltage (V) |
| Ibv | 1e-3 | no | current at reverse breakdown voltage (A) |
| Vj | 1.0 | no | junction potential (V) |
| Cj0 | 300e-15 | no | zero-bias junction capacitance (F) |
| M | 0.5 | no | coeficiente de graduación |
| Area | 1.0 | no | diode relative area |
| Fc | 0.5 | no | coeficiente de pérdida de capacidad en polarización directa |
| Tt | 0.1e-9 | no | transit time (s) |
| Xti | 3.0 | no | exponente de temperatura de la corriente de saturación |
| Xpart | 0.4 | no | charge partition parameter |
| Tnom | 26.85 | no | parameter measurement temperature (Celsius) |
| Temp | 26.85 | no | simulación de temperatura |
Epfl-Ekv Pmos 2.6¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | EPFL-EKV PMOS 2.6 |
Descripción |
EPFL-EKV MOS 2.6 verilog device |
| Schematic entry | EKV26MOS |
| Netlist entry | M |
Tipo |
AnalogComponent |
| Bitmap file | EKV26pMOS |
Propiedades |
55 |
| Category | verilog-a devices |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
Tipo |
pmos | Sí |
polarity [nmos, pmos] |
| LEVEL | 1 | no | long = 1, short = 2 |
| L | 0.5e-6 | no | length parameter (m) |
| W | 10e-6 | no | Width parameter (m) |
| Np | 1.0 | no | parallel multiple device number |
| Ns | 1.0 | no | series multiple device number |
| Cox | 3.45e-3 | no | gate oxide capacitance per unit area (F/m**2) |
| Xj | 0.15e-6 | no | metallurgical junction depth (m) |
| Dw | -0.03e-6 | no | channel width correction (m) |
| Dl | -0.05e-6 | no | channel length correction (m) |
| Vto | -0.55 | no | long channel threshold voltage (V) |
| Gamma | 0.69 | no | body effect parameter (V**(1/2)) |
| Phi | 0.87 | no | bulk Fermi potential (V) |
| Kp | 35e-6 | no | transconductance parameter (A/V**2) |
| Theta | 50e-3 | no | mobility reduction coefficient (1/V) |
| EO | 51.0e6 | no | mobility coefficient (V/m) |
| Ucrit | 18.0e6 | no | longitudinal critical field (V/m) |
| Lambda | 1.1 | no | depletion length coefficient |
| Weta | 0.0 | no | narrow-channel effect coefficient |
| Leta | 0.45 | no | longitudinal critical field |
| Q0 | 200e-6 | no | reverse short channel charge density (A*s/m**2) |
| Lk | 0.6e-6 | no | characteristic length (m) |
| Tcv | -1.4e-3 | no | threshold voltage temperature coefficient (V/K) |
| Bex | -1.4 | no | mobility temperature coefficient |
| Ucex | 2.0 | no | Longitudinal critical field temperature exponent |
| Ibbt | 0.0 | no | Ibb temperature coefficient (1/K) |
| Hdif | 0.9e-6 | no | heavily doped diffusion length (m) |
| Rsh | 990.0 | no | drain/source diffusion sheet resistance (Ohm/square) |
| Rsc | 0.0 | no | source contact resistance (Ohm) |
| Rdc | 0.0 | no | drain contact resistance (Ohm) |
| Cgso | 1.5e-10 | no | gate to source overlap capacitance (F/m) |
| Cgdo | 1.5e-10 | no | gate to drain overlap capacitance (F/m) |
| Cgbo | 4.0e-10 | no | gate to bulk overlap capacitance (F/m) |
| Iba | 0.0 | no | first impact ionization coefficient (1/m) |
| Ibb | 3.0e8 | no | second impact ionization coefficient (V/m) |
| Ibn | 1.0 | no | saturation voltage factor for impact ionization |
| Kf | 1.0e-28 | no | coeficiente de ruido térmico |
| Af | 1.0 | no | exponente de ruido térmico |
| Avto | 0.0 | no | area related theshold voltage mismatch parameter (V*m) |
| Akp | 0.0 | no | area related gain mismatch parameter (m) |
| Agamma | 0.0 | no | area related body effect mismatch parameter (sqrt(V)*m) |
| N | 1.0 | no | coeficiente de emisión |
| Is | 1e-14 | no | saturation current (A) |
| Bv | 100 | no | reverse breakdown voltage (V) |
| Ibv | 1e-3 | no | current at reverse breakdown voltage (A) |
| Vj | 1.0 | no | junction potential (V) |
| Cj0 | 300e-15 | no | zero-bias junction capacitance (F) |
| M | 0.5 | no | coeficiente de graduación |
| Area | 1.0 | no | diode relative area |
| Fc | 0.5 | no | coeficiente de pérdida de capacidad en polarización directa |
| Tt | 0.1e-9 | no | transit time (s) |
| Xti | 3.0 | no | exponente de temperatura de la corriente de saturación |
| Xpart | 0.4 | no | charge partition parameter |
| Tnom | 26.85 | no | parameter measurement temperature (Celsius) |
| Temp | 26.85 | no | simulación de temperatura |
Bsim3V34Nmos¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | bsim3v34nMOS |
Descripción |
bsim3v34nMOS verilog device |
| Schematic entry | bsim3v34nMOS |
| Netlist entry | BSIM3_ |
Tipo |
AnalogComponent |
| Bitmap file | bsim3v34nMOS |
Propiedades |
408 |
| Category | verilog-a devices |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| L | 0.35e-6 | no | - |
| W | 5.0e-6 | no | - |
| PS | 8.0e-6 | no | - |
| PD | 8.0e-6 | no | - |
| AS | 12.0e-12 | no | - |
| AD | 12.0e-12 | no | - |
| NRS | 10.0 | no | - |
| NRD | 10.0 | no | - |
| NQSMOD | 0 | no | - |
| GMIN | 1e-12 | no | - |
| VERSION | 3.24 | no | - |
| PARAMCHK | 0 | no | - |
| MOBMOD | 1 | no | - |
| CAPMOD | 3 | no | - |
| NOIMOD | 4 | no | - |
| BINUNIT | 1 | no | - |
| TOX | 150.0e-10 | no | - |
| TOXM | 150.0e-10 | no | - |
| CDSC | 2.4e-4 | no | - |
| CDSCB | 0.0 | no | - |
| CDSCD | 0.0 | no | - |
| CIT | 0.0 | no | - |
| NFACTOR | 1 | no | - |
| XJ | 0.15e-6 | no | - |
| VSAT | 8.0e4 | no | - |
| AT | 3.3e4 | no | - |
| A0 | 1.0 | no | - |
| AGS | 0.0 | no | - |
| A1 | 0.0 | no | - |
| A2 | 1.0 | no | - |
| KETA | -0.047 | no | - |
| NSUB | -99.0 | no | - |
| NCH | -99.0 | no | - |
| NGATE | 0 | no | - |
| GAMMA1 | -99.0 | no | - |
| GAMMA2 | -99.0 | no | - |
| VBX | -99.0 | no | - |
| VBM | -3.0 | no | - |
| XT | -99.0 | no | - |
| K1 | -99.0 | no | - |
| KT1 | -0.11 | no | - |
| KT1L | 0.0 | no | - |
| KT2 | 0.022 | no | - |
| K2 | -99.0 | no | - |
| K3 | 80.0 | no | - |
| K3B | 0.0 | no | - |
| W0 | 2.5e-6 | no | - |
| NLX | 1.74e-7 | no | - |
| DVT0 | 2.2 | no | - |
| DVT1 | 0.53 | no | - |
| DVT2 | -0.032 | no | - |
| DVT0W | 0.0 | no | - |
| DVT1W | 5.3e6 | no | - |
| DVT2W | -0.032 | no | - |
| DROUT | 0.56 | no | - |
| DSUB | 0.56 | no | - |
| VTHO | 0.7 | no | - |
| VTH0 | 0.7 | no | - |
| UA | 2.25e-9 | no | - |
| UA1 | 4.31e-9 | no | - |
| UB | 5.87e-19 | no | - |
| UB1 | -7.61e-18 | no | - |
| UC | -99.0 | no | - |
| UC1 | -99.0 | no | - |
| U0 | -99.0 | no | - |
| UTE | -1.5 | no | - |
| VOFF | -0.08 | no | - |
| TNOM | 26.85 | no | - |
| CGSO | -99.0 | no | - |
| CGDO | -99.0 | no | - |
| CGBO | -99.0 | no | - |
| XPART | 0.4 | no | - |
| ELM | 5.0 | no | - |
| DELTA | 0.01 | no | - |
| RSH | 0.0 | no | - |
| RDSW | 0 | no | - |
| PRWG | 0.0 | no | - |
| PRWB | 0.0 | no | - |
| PRT | 0.0 | no | - |
| ETA0 | 0.08 | no | - |
| ETAB | -0.07 | no | - |
| PCLM | 1.3 | no | - |
| PDIBLC1 | 0.39 | no | - |
| PDIBLC2 | 0.0086 | no | - |
| PDIBLCB | 0.0 | no | - |
| PSCBE1 | 4.24e8 | no | - |
| PSCBE2 | 1.0e-5 | no | - |
| PVAG | 0.0 | no | - |
| JS | 1.0E-4 | no | - |
| JSW | 0.0 | no | - |
| PB | 1.0 | no | - |
| NJ | 1.0 | no | - |
| XTI | 3.0 | no | - |
| MJ | 0.5 | no | - |
| PBSW | 1.0 | no | - |
| MJSW | 0.33 | no | - |
| PBSWG | 1.0 | no | - |
| MJSWG | 0.33 | no | - |
| CJ | 5.0E-4 | no | - |
| VFBCV | -1.0 | no | - |
| VFB | -99.0 | no | - |
| CJSW | 5.0E-10 | no | - |
| CJSWG | 5.0e-10 | no | - |
| TPB | 0.0 | no | - |
| TCJ | 0.0 | no | - |
| TPBSW | 0.0 | no | - |
| TCJSW | 0.0 | no | - |
| TPBSWG | 0.0 | no | - |
| TCJSWG | 0.0 | no | - |
| ACDE | 1.0 | no | - |
| MOIN | 15.0 | no | - |
| NOFF | 1.0 | no | - |
| VOFFCV | 0.0 | no | - |
| LINT | 0.0 | no | - |
| LL | 0.0 | no | - |
| LLC | 0.0 | no | - |
| LLN | 1.0 | no | - |
| LW | 0.0 | no | - |
| LWC | 0.0 | no | - |
| LWN | 1.0 | no | - |
| LWL | 0.0 | no | - |
| LWLC | 0.0 | no | - |
| LMIN | 0.0 | no | - |
| LMAX | 1.0 | no | - |
| WR | 1.0 | no | - |
| WINT | 0.0 | no | - |
| DWG | 0.0 | no | - |
| DWB | 0.0 | no | - |
| WL | 0.0 | no | - |
| WLC | 0.0 | no | - |
| WLN | 1.0 | no | - |
| WW | 0.0 | no | - |
| WWC | 0.0 | no | - |
| WWN | 1.0 | no | - |
| WWL | 0.0 | no | - |
| WWLC | 0.0 | no | - |
| WMIN | 0.0 | no | - |
| WMAX | 1.0 | no | - |
| B0 | 0.0 | no | - |
| B1 | 0.0 | no | - |
| CGSL | 0.0 | no | - |
| CGDL | 0.0 | no | - |
| CKAPPA | 0.6 | no | - |
| CF | -99.0 | no | - |
| CLC | 0.1e-6 | no | - |
| CLE | 0.6 | no | - |
| DWC | 0.0 | no | - |
| DLC | -99.0 | no | - |
| ALPHA0 | 0.0 | no | - |
| ALPHA1 | 0.0 | no | - |
| BETA0 | 30.0 | no | - |
| IJTH | 0.1 | no | - |
| LCDSC | 0.0 | no | - |
| LCDSCB | 0.0 | no | - |
| LCDSCD | 0.0 | no | - |
| LCIT | 0.0 | no | - |
| LNFACTOR | 0.0 | no | - |
| LXJ | 0.0 | no | - |
| LVSAT | 0.0 | no | - |
| LAT | 0.0 | no | - |
| LA0 | 0.0 | no | - |
| LAGS | 0.0 | no | - |
| LA1 | 0.0 | no | - |
| LA2 | 0.0 | no | - |
| LKETA | 0.0 | no | - |
| LNSUB | 0.0 | no | - |
| LNCH | 0.0 | no | - |
| LNGATE | 0.0 | no | - |
| LGAMMA1 | -99.0 | no | - |
| LGAMMA2 | -99.0 | no | - |
| LVBX | -99.0 | no | - |
| LVBM | 0.0 | no | - |
| LXT | 0.0 | no | - |
| LK1 | -99.0 | no | - |
| LKT1 | 0.0 | no | - |
| LKT1L | 0.0 | no | - |
| LKT2 | 0.0 | no | - |
| LK2 | -99.0 | no | - |
| LK3 | 0.0 | no | - |
| LK3B | 0.0 | no | - |
| LW0 | 0.0 | no | - |
| LNLX | 0.0 | no | - |
| LDVT0 | 0.0 | no | - |
| LDVT1 | 0.0 | no | - |
| LDVT2 | 0.0 | no | - |
| LDVT0W | 0.0 | no | - |
| LDVT1W | 0.0 | no | - |
| LDVT2W | 0.0 | no | - |
| LDROUT | 0.0 | no | - |
| LDSUB | 0.0 | no | - |
| LVTH0 | 0.0 | no | - |
| LVTHO | 0.0 | no | - |
| LUA | 0.0 | no | - |
| LUA1 | 0.0 | no | - |
| LUB | 0.0 | no | - |
| LUB1 | 0.0 | no | - |
| LUC | 0.0 | no | - |
| LUC1 | 0.0 | no | - |
| LU0 | 0.0 | no | - |
| LUTE | 0.0 | no | - |
| LVOFF | 0.0 | no | - |
| LELM | 0.0 | no | - |
| LDELTA | 0.0 | no | - |
| LRDSW | 0.0 | no | - |
| LPRWG | 0.0 | no | - |
| LPRWB | 0.0 | no | - |
| LPRT | 0.0 | no | - |
| LETA0 | 0.0 | no | - |
| LETAB | 0.0 | no | - |
| LPCLM | 0.0 | no | - |
| LPDIBLC1 | 0.0 | no | - |
| LPDIBLC2 | 0.0 | no | - |
| LPDIBLCB | 0.0 | no | - |
| LPSCBE1 | 0.0 | no | - |
| LPSCBE2 | 0.0 | no | - |
| LPVAG | 0.0 | no | - |
| LWR | 0.0 | no | - |
| LDWG | 0.0 | no | - |
| LDWB | 0.0 | no | - |
| LB0 | 0.0 | no | - |
| LB1 | 0.0 | no | - |
| LCGSL | 0.0 | no | - |
| LCGDL | 0.0 | no | - |
| LCKAPPA | 0.0 | no | - |
| LCF | 0.0 | no | - |
| LCLC | 0.0 | no | - |
| LCLE | 0.0 | no | - |
| LALPHA0 | 0.0 | no | - |
| LALPHA1 | 0.0 | no | - |
| LBETA0 | 0.0 | no | - |
| LVFBCV | 0.0 | no | - |
| LVFB | 0.0 | no | - |
| LACDE | 0.0 | no | - |
| LMOIN | 0.0 | no | - |
| LNOFF | 0.0 | no | - |
| LVOFFCV | 0.0 | no | - |
| WCDSC | 0.0 | no | - |
| WCDSCB | 0.0 | no | - |
| WCDSCD | 0.0 | no | - |
| WCIT | 0.0 | no | - |
| WNFACTOR | 0.0 | no | - |
| WXJ | 0.0 | no | - |
| WVSAT | 0.0 | no | - |
| WAT | 0.0 | no | - |
| WA0 | 0.0 | no | - |
| WAGS | 0.0 | no | - |
| WA1 | 0.0 | no | - |
| WA2 | 0.0 | no | - |
| WKETA | 0.0 | no | - |
| WNSUB | 0.0 | no | - |
| WNCH | 0.0 | no | - |
| WNGATE | 0.0 | no | - |
| WGAMMA1 | -99.0 | no | - |
| WGAMMA2 | -99.0 | no | - |
| WVBX | -99.0 | no | - |
| WVBM | 0.0 | no | - |
| WXT | 0.0 | no | - |
| WK1 | -99.0 | no | - |
| WKT1 | 0.0 | no | - |
| WKT1L | 0.0 | no | - |
| WKT2 | 0.0 | no | - |
| WK2 | -99.0 | no | - |
| WK3 | 0.0 | no | - |
| WK3B | 0.0 | no | - |
| WW0 | 0.0 | no | - |
| WNLX | 0.0 | no | - |
| WDVT0 | 0.0 | no | - |
| WDVT1 | 0.0 | no | - |
| WDVT2 | 0.0 | no | - |
| WDVT0W | 0.0 | no | - |
| WDVT1W | 0.0 | no | - |
| WDVT2W | 0.0 | no | - |
| WDROUT | 0.0 | no | - |
| WDSUB | 0.0 | no | - |
| WVTH0 | 0.0 | no | - |
| WVTHO | 0.0 | no | - |
| WUA | 0.0 | no | - |
| WUA1 | 0.0 | no | - |
| WUB | 0.0 | no | - |
| WUB1 | 0.0 | no | - |
| WUC | 0.0 | no | - |
| WUC1 | 0.0 | no | - |
| WU0 | 0.0 | no | - |
| WUTE | 0.0 | no | - |
| WVOFF | 0.0 | no | - |
| WELM | 0.0 | no | - |
| WDELTA | 0.0 | no | - |
| WRDSW | 0.0 | no | - |
| WPRWG | 0.0 | no | - |
| WPRWB | 0.0 | no | - |
| WPRT | 0.0 | no | - |
| WETA0 | 0.0 | no | - |
| WETAB | 0.0 | no | - |
| WPCLM | 0.0 | no | - |
| WPDIBLC1 | 0.0 | no | - |
| WPDIBLC2 | 0.0 | no | - |
| WPDIBLCB | 0.0 | no | - |
| WPSCBE1 | 0.0 | no | - |
| WPSCBE2 | 0.0 | no | - |
| WPVAG | 0.0 | no | - |
| WWR | 0.0 | no | - |
| WDWG | 0.0 | no | - |
| WDWB | 0.0 | no | - |
| WB0 | 0.0 | no | - |
| WB1 | 0.0 | no | - |
| WCGSL | 0.0 | no | - |
| WCGDL | 0.0 | no | - |
| WCKAPPA | 0.0 | no | - |
| WCF | 0.0 | no | - |
| WCLC | 0.0 | no | - |
| WCLE | 0.0 | no | - |
| WALPHA0 | 0.0 | no | - |
| WALPHA1 | 0.0 | no | - |
| WBETA0 | 0.0 | no | - |
| WVFBCV | 0.0 | no | - |
| WVFB | 0.0 | no | - |
| WACDE | 0.0 | no | - |
| WMOIN | 0.0 | no | - |
| WNOFF | 0.0 | no | - |
| WVOFFCV | 0.0 | no | - |
| PCDSC | 0.0 | no | - |
| PCDSCB | 0.0 | no | - |
| PCDSCD | 0.0 | no | - |
| PCIT | 0.0 | no | - |
| PNFACTOR | 0.0 | no | - |
| PXJ | 0.0 | no | - |
| PVSAT | 0.0 | no | - |
| PAT | 0.0 | no | - |
| PA0 | 0.0 | no | - |
| PAGS | 0.0 | no | - |
| PA1 | 0.0 | no | - |
| PA2 | 0.0 | no | - |
| PKETA | 0.0 | no | - |
| PNSUB | 0.0 | no | - |
| PNCH | 0.0 | no | - |
| PNGATE | 0.0 | no | - |
| PGAMMA1 | -99.0 | no | - |
| PGAMMA2 | -99.0 | no | - |
| PVBX | -99.0 | no | - |
| PVBM | 0.0 | no | - |
| PXT | 0.0 | no | - |
| PK1 | -99.0 | no | - |
| PKT1 | 0.0 | no | - |
| PKT1L | 0.0 | no | - |
| PKT2 | 0.0 | no | - |
| PK2 | -99.0 | no | - |
| PK3 | 0.0 | no | - |
| PK3B | 0.0 | no | - |
| PW0 | 0.0 | no | - |
| PNLX | 0.0 | no | - |
| PDVT0 | 0.0 | no | - |
| PDVT1 | 0.0 | no | - |
| PDVT2 | 0.0 | no | - |
| PDVT0W | 0.0 | no | - |
| PDVT1W | 0.0 | no | - |
| PDVT2W | 0.0 | no | - |
| PDROUT | 0.0 | no | - |
| PDSUB | 0.0 | no | - |
| PVTH0 | 0.0 | no | - |
| PVTHO | 0.0 | no | - |
| PUA | 0.0 | no | - |
| PUA1 | 0.0 | no | - |
| PUB | 0.0 | no | - |
| PUB1 | 0.0 | no | - |
| PUC | 0.0 | no | - |
| PUC1 | 0.0 | no | - |
| PU0 | 0.0 | no | - |
| PUTE | 0.0 | no | - |
| PVOFF | 0.0 | no | - |
| PELM | 0.0 | no | - |
| PDELTA | 0.0 | no | - |
| PRDSW | 0.0 | no | - |
| PPRWG | 0.0 | no | - |
| PPRWB | 0.0 | no | - |
| PPRT | 0.0 | no | - |
| PETA0 | 0.0 | no | - |
| PETAB | 0.0 | no | - |
| PPCLM | 0.0 | no | - |
| PPDIBLC1 | 0.0 | no | - |
| PPDIBLC2 | 0.0 | no | - |
| PPDIBLCB | 0.0 | no | - |
| PPSCBE1 | 0.0 | no | - |
| PPSCBE2 | 0.0 | no | - |
| PPVAG | 0.0 | no | - |
| PWR | 0.0 | no | - |
| PDWG | 0.0 | no | - |
| PDWB | 0.0 | no | - |
| PB0 | 0.0 | no | - |
| PB1 | 0.0 | no | - |
| PCGSL | 0.0 | no | - |
| PCGDL | 0.0 | no | - |
| PCKAPPA | 0.0 | no | - |
| PCF | 0.0 | no | - |
| PCLC | 0.0 | no | - |
| PCLE | 0.0 | no | - |
| PALPHA0 | 0.0 | no | - |
| PALPHA1 | 0.0 | no | - |
| PBETA0 | 0.0 | no | - |
| PVFBCV | 0.0 | no | - |
| PVFB | 0.0 | no | - |
| PACDE | 0.0 | no | - |
| PMOIN | 0.0 | no | - |
| PNOFF | 0.0 | no | - |
| PVOFFCV | 0.0 | no | - |
| KF | 0.0 | no | - |
| AF | 1.0 | no | - |
| EF | 1.0 | no | - |
| Temp | 26.85 | no | simulación de temperatura |
Bsim3V34Pmos¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | bsim3v34pMOS |
Descripción |
bsim3v34pMOS verilog device |
| Schematic entry | bsim3v34pMOS |
| Netlist entry | BSIM3_ |
Tipo |
AnalogComponent |
| Bitmap file | bsim3v34pMOS |
Propiedades |
408 |
| Category | verilog-a devices |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| L | 3.5e-6 | no | - |
| W | 5.0e-6 | no | - |
| PS | 8.0e-6 | no | - |
| PD | 8.0e-6 | no | - |
| AS | 12.0e-12 | no | - |
| AD | 12.0e-12 | no | - |
| NRS | 10.0 | no | - |
| NRD | 10.0 | no | - |
| NQSMOD | 0 | no | - |
| GMIN | 1e-12 | no | - |
| VERSION | 3.24 | no | - |
| PARAMCHK | 0 | no | - |
| MOBMOD | 1 | no | - |
| CAPMOD | 3 | no | - |
| NOIMOD | 4 | no | - |
| BINUNIT | 1 | no | - |
| TOX | 150.0e-10 | no | - |
| TOXM | 150.0e-10 | no | - |
| CDSC | 2.4e-4 | no | - |
| CDSCB | 0.0 | no | - |
| CDSCD | 0.0 | no | - |
| CIT | 0.0 | no | - |
| NFACTOR | 1 | no | - |
| XJ | 0.15e-6 | no | - |
| VSAT | 8.0e4 | no | - |
| AT | 3.3e4 | no | - |
| A0 | 1.0 | no | - |
| AGS | 0.0 | no | - |
| A1 | 0.0 | no | - |
| A2 | 1.0 | no | - |
| KETA | -0.047 | no | - |
| NSUB | -99.0 | no | - |
| NCH | -99.0 | no | - |
| NGATE | 0 | no | - |
| GAMMA1 | -99.0 | no | - |
| GAMMA2 | -99.0 | no | - |
| VBX | -99.0 | no | - |
| VBM | -3.0 | no | - |
| XT | -99.0 | no | - |
| K1 | -99.0 | no | - |
| KT1 | -0.11 | no | - |
| KT1L | 0.0 | no | - |
| KT2 | 0.022 | no | - |
| K2 | -99.0 | no | - |
| K3 | 80.0 | no | - |
| K3B | 0.0 | no | - |
| W0 | 2.5e-6 | no | - |
| NLX | 1.74e-7 | no | - |
| DVT0 | 2.2 | no | - |
| DVT1 | 0.53 | no | - |
| DVT2 | -0.032 | no | - |
| DVT0W | 0.0 | no | - |
| DVT1W | 5.3e6 | no | - |
| DVT2W | -0.032 | no | - |
| DROUT | 0.56 | no | - |
| DSUB | 0.56 | no | - |
| VTHO | -0.7 | no | - |
| VTH0 | -0.7 | no | - |
| UA | 2.25e-9 | no | - |
| UA1 | 4.31e-9 | no | - |
| UB | 5.87e-19 | no | - |
| UB1 | -7.61e-18 | no | - |
| UC | -99.0 | no | - |
| UC1 | -99.0 | no | - |
| U0 | -99.0 | no | - |
| UTE | -1.5 | no | - |
| VOFF | -0.08 | no | - |
| TNOM | 26.85 | no | - |
| CGSO | -99.0 | no | - |
| CGDO | -99.0 | no | - |
| CGBO | -99.0 | no | - |
| XPART | 0.4 | no | - |
| ELM | 5.0 | no | - |
| DELTA | 0.01 | no | - |
| RSH | 0.0 | no | - |
| RDSW | 0 | no | - |
| PRWG | 0.0 | no | - |
| PRWB | 0.0 | no | - |
| PRT | 0.0 | no | - |
| ETA0 | 0.08 | no | - |
| ETAB | -0.07 | no | - |
| PCLM | 1.3 | no | - |
| PDIBLC1 | 0.39 | no | - |
| PDIBLC2 | 0.0086 | no | - |
| PDIBLCB | 0.0 | no | - |
| PSCBE1 | 4.24e8 | no | - |
| PSCBE2 | 1.0e-5 | no | - |
| PVAG | 0.0 | no | - |
| JS | 1.0E-4 | no | - |
| JSW | 0.0 | no | - |
| PB | 1.0 | no | - |
| NJ | 1.0 | no | - |
| XTI | 3.0 | no | - |
| MJ | 0.5 | no | - |
| PBSW | 1.0 | no | - |
| MJSW | 0.33 | no | - |
| PBSWG | 1.0 | no | - |
| MJSWG | 0.33 | no | - |
| CJ | 5.0E-4 | no | - |
| VFBCV | -1.0 | no | - |
| VFB | -99.0 | no | - |
| CJSW | 5.0E-10 | no | - |
| CJSWG | 5.0e-10 | no | - |
| TPB | 0.0 | no | - |
| TCJ | 0.0 | no | - |
| TPBSW | 0.0 | no | - |
| TCJSW | 0.0 | no | - |
| TPBSWG | 0.0 | no | - |
| TCJSWG | 0.0 | no | - |
| ACDE | 1.0 | no | - |
| MOIN | 15.0 | no | - |
| NOFF | 1.0 | no | - |
| VOFFCV | 0.0 | no | - |
| LINT | 0.0 | no | - |
| LL | 0.0 | no | - |
| LLC | 0.0 | no | - |
| LLN | 1.0 | no | - |
| LW | 0.0 | no | - |
| LWC | 0.0 | no | - |
| LWN | 1.0 | no | - |
| LWL | 0.0 | no | - |
| LWLC | 0.0 | no | - |
| LMIN | 0.0 | no | - |
| LMAX | 1.0 | no | - |
| WR | 1.0 | no | - |
| WINT | 0.0 | no | - |
| DWG | 0.0 | no | - |
| DWB | 0.0 | no | - |
| WL | 0.0 | no | - |
| WLC | 0.0 | no | - |
| WLN | 1.0 | no | - |
| WW | 0.0 | no | - |
| WWC | 0.0 | no | - |
| WWN | 1.0 | no | - |
| WWL | 0.0 | no | - |
| WWLC | 0.0 | no | - |
| WMIN | 0.0 | no | - |
| WMAX | 1.0 | no | - |
| B0 | 0.0 | no | - |
| B1 | 0.0 | no | - |
| CGSL | 0.0 | no | - |
| CGDL | 0.0 | no | - |
| CKAPPA | 0.6 | no | - |
| CF | -99.0 | no | - |
| CLC | 0.1e-6 | no | - |
| CLE | 0.6 | no | - |
| DWC | 0.0 | no | - |
| DLC | -99.0 | no | - |
| ALPHA0 | 0.0 | no | - |
| ALPHA1 | 0.0 | no | - |
| BETA0 | 30.0 | no | - |
| IJTH | 0.1 | no | - |
| LCDSC | 0.0 | no | - |
| LCDSCB | 0.0 | no | - |
| LCDSCD | 0.0 | no | - |
| LCIT | 0.0 | no | - |
| LNFACTOR | 0.0 | no | - |
| LXJ | 0.0 | no | - |
| LVSAT | 0.0 | no | - |
| LAT | 0.0 | no | - |
| LA0 | 0.0 | no | - |
| LAGS | 0.0 | no | - |
| LA1 | 0.0 | no | - |
| LA2 | 0.0 | no | - |
| LKETA | 0.0 | no | - |
| LNSUB | 0.0 | no | - |
| LNCH | 0.0 | no | - |
| LNGATE | 0.0 | no | - |
| LGAMMA1 | -99.0 | no | - |
| LGAMMA2 | -99.0 | no | - |
| LVBX | -99.0 | no | - |
| LVBM | 0.0 | no | - |
| LXT | 0.0 | no | - |
| LK1 | -99.0 | no | - |
| LKT1 | 0.0 | no | - |
| LKT1L | 0.0 | no | - |
| LKT2 | 0.0 | no | - |
| LK2 | -99.0 | no | - |
| LK3 | 0.0 | no | - |
| LK3B | 0.0 | no | - |
| LW0 | 0.0 | no | - |
| LNLX | 0.0 | no | - |
| LDVT0 | 0.0 | no | - |
| LDVT1 | 0.0 | no | - |
| LDVT2 | 0.0 | no | - |
| LDVT0W | 0.0 | no | - |
| LDVT1W | 0.0 | no | - |
| LDVT2W | 0.0 | no | - |
| LDROUT | 0.0 | no | - |
| LDSUB | 0.0 | no | - |
| LVTH0 | 0.0 | no | - |
| LVTHO | 0.0 | no | - |
| LUA | 0.0 | no | - |
| LUA1 | 0.0 | no | - |
| LUB | 0.0 | no | - |
| LUB1 | 0.0 | no | - |
| LUC | 0.0 | no | - |
| LUC1 | 0.0 | no | - |
| LU0 | 0.0 | no | - |
| LUTE | 0.0 | no | - |
| LVOFF | 0.0 | no | - |
| LELM | 0.0 | no | - |
| LDELTA | 0.0 | no | - |
| LRDSW | 0.0 | no | - |
| LPRWG | 0.0 | no | - |
| LPRWB | 0.0 | no | - |
| LPRT | 0.0 | no | - |
| LETA0 | 0.0 | no | - |
| LETAB | 0.0 | no | - |
| LPCLM | 0.0 | no | - |
| LPDIBLC1 | 0.0 | no | - |
| LPDIBLC2 | 0.0 | no | - |
| LPDIBLCB | 0.0 | no | - |
| LPSCBE1 | 0.0 | no | - |
| LPSCBE2 | 0.0 | no | - |
| LPVAG | 0.0 | no | - |
| LWR | 0.0 | no | - |
| LDWG | 0.0 | no | - |
| LDWB | 0.0 | no | - |
| LB0 | 0.0 | no | - |
| LB1 | 0.0 | no | - |
| LCGSL | 0.0 | no | - |
| LCGDL | 0.0 | no | - |
| LCKAPPA | 0.0 | no | - |
| LCF | 0.0 | no | - |
| LCLC | 0.0 | no | - |
| LCLE | 0.0 | no | - |
| LALPHA0 | 0.0 | no | - |
| LALPHA1 | 0.0 | no | - |
| LBETA0 | 0.0 | no | - |
| LVFBCV | 0.0 | no | - |
| LVFB | 0.0 | no | - |
| LACDE | 0.0 | no | - |
| LMOIN | 0.0 | no | - |
| LNOFF | 0.0 | no | - |
| LVOFFCV | 0.0 | no | - |
| WCDSC | 0.0 | no | - |
| WCDSCB | 0.0 | no | - |
| WCDSCD | 0.0 | no | - |
| WCIT | 0.0 | no | - |
| WNFACTOR | 0.0 | no | - |
| WXJ | 0.0 | no | - |
| WVSAT | 0.0 | no | - |
| WAT | 0.0 | no | - |
| WA0 | 0.0 | no | - |
| WAGS | 0.0 | no | - |
| WA1 | 0.0 | no | - |
| WA2 | 0.0 | no | - |
| WKETA | 0.0 | no | - |
| WNSUB | 0.0 | no | - |
| WNCH | 0.0 | no | - |
| WNGATE | 0.0 | no | - |
| WGAMMA1 | -99.0 | no | - |
| WGAMMA2 | -99.0 | no | - |
| WVBX | -99.0 | no | - |
| WVBM | 0.0 | no | - |
| WXT | 0.0 | no | - |
| WK1 | -99.0 | no | - |
| WKT1 | 0.0 | no | - |
| WKT1L | 0.0 | no | - |
| WKT2 | 0.0 | no | - |
| WK2 | -99.0 | no | - |
| WK3 | 0.0 | no | - |
| WK3B | 0.0 | no | - |
| WW0 | 0.0 | no | - |
| WNLX | 0.0 | no | - |
| WDVT0 | 0.0 | no | - |
| WDVT1 | 0.0 | no | - |
| WDVT2 | 0.0 | no | - |
| WDVT0W | 0.0 | no | - |
| WDVT1W | 0.0 | no | - |
| WDVT2W | 0.0 | no | - |
| WDROUT | 0.0 | no | - |
| WDSUB | 0.0 | no | - |
| WVTH0 | 0.0 | no | - |
| WVTHO | 0.0 | no | - |
| WUA | 0.0 | no | - |
| WUA1 | 0.0 | no | - |
| WUB | 0.0 | no | - |
| WUB1 | 0.0 | no | - |
| WUC | 0.0 | no | - |
| WUC1 | 0.0 | no | - |
| WU0 | 0.0 | no | - |
| WUTE | 0.0 | no | - |
| WVOFF | 0.0 | no | - |
| WELM | 0.0 | no | - |
| WDELTA | 0.0 | no | - |
| WRDSW | 0.0 | no | - |
| WPRWG | 0.0 | no | - |
| WPRWB | 0.0 | no | - |
| WPRT | 0.0 | no | - |
| WETA0 | 0.0 | no | - |
| WETAB | 0.0 | no | - |
| WPCLM | 0.0 | no | - |
| WPDIBLC1 | 0.0 | no | - |
| WPDIBLC2 | 0.0 | no | - |
| WPDIBLCB | 0.0 | no | - |
| WPSCBE1 | 0.0 | no | - |
| WPSCBE2 | 0.0 | no | - |
| WPVAG | 0.0 | no | - |
| WWR | 0.0 | no | - |
| WDWG | 0.0 | no | - |
| WDWB | 0.0 | no | - |
| WB0 | 0.0 | no | - |
| WB1 | 0.0 | no | - |
| WCGSL | 0.0 | no | - |
| WCGDL | 0.0 | no | - |
| WCKAPPA | 0.0 | no | - |
| WCF | 0.0 | no | - |
| WCLC | 0.0 | no | - |
| WCLE | 0.0 | no | - |
| WALPHA0 | 0.0 | no | - |
| WALPHA1 | 0.0 | no | - |
| WBETA0 | 0.0 | no | - |
| WVFBCV | 0.0 | no | - |
| WVFB | 0.0 | no | - |
| WACDE | 0.0 | no | - |
| WMOIN | 0.0 | no | - |
| WNOFF | 0.0 | no | - |
| WVOFFCV | 0.0 | no | - |
| PCDSC | 0.0 | no | - |
| PCDSCB | 0.0 | no | - |
| PCDSCD | 0.0 | no | - |
| PCIT | 0.0 | no | - |
| PNFACTOR | 0.0 | no | - |
| PXJ | 0.0 | no | - |
| PVSAT | 0.0 | no | - |
| PAT | 0.0 | no | - |
| PA0 | 0.0 | no | - |
| PAGS | 0.0 | no | - |
| PA1 | 0.0 | no | - |
| PA2 | 0.0 | no | - |
| PKETA | 0.0 | no | - |
| PNSUB | 0.0 | no | - |
| PNCH | 0.0 | no | - |
| PNGATE | 0.0 | no | - |
| PGAMMA1 | -99.0 | no | - |
| PGAMMA2 | -99.0 | no | - |
| PVBX | -99.0 | no | - |
| PVBM | 0.0 | no | - |
| PXT | 0.0 | no | - |
| PK1 | -99.0 | no | - |
| PKT1 | 0.0 | no | - |
| PKT1L | 0.0 | no | - |
| PKT2 | 0.0 | no | - |
| PK2 | -99.0 | no | - |
| PK3 | 0.0 | no | - |
| PK3B | 0.0 | no | - |
| PW0 | 0.0 | no | - |
| PNLX | 0.0 | no | - |
| PDVT0 | 0.0 | no | - |
| PDVT1 | 0.0 | no | - |
| PDVT2 | 0.0 | no | - |
| PDVT0W | 0.0 | no | - |
| PDVT1W | 0.0 | no | - |
| PDVT2W | 0.0 | no | - |
| PDROUT | 0.0 | no | - |
| PDSUB | 0.0 | no | - |
| PVTH0 | 0.0 | no | - |
| PVTHO | 0.0 | no | - |
| PUA | 0.0 | no | - |
| PUA1 | 0.0 | no | - |
| PUB | 0.0 | no | - |
| PUB1 | 0.0 | no | - |
| PUC | 0.0 | no | - |
| PUC1 | 0.0 | no | - |
| PU0 | 0.0 | no | - |
| PUTE | 0.0 | no | - |
| PVOFF | 0.0 | no | - |
| PELM | 0.0 | no | - |
| PDELTA | 0.0 | no | - |
| PRDSW | 0.0 | no | - |
| PPRWG | 0.0 | no | - |
| PPRWB | 0.0 | no | - |
| PPRT | 0.0 | no | - |
| PETA0 | 0.0 | no | - |
| PETAB | 0.0 | no | - |
| PPCLM | 0.0 | no | - |
| PPDIBLC1 | 0.0 | no | - |
| PPDIBLC2 | 0.0 | no | - |
| PPDIBLCB | 0.0 | no | - |
| PPSCBE1 | 0.0 | no | - |
| PPSCBE2 | 0.0 | no | - |
| PPVAG | 0.0 | no | - |
| PWR | 0.0 | no | - |
| PDWG | 0.0 | no | - |
| PDWB | 0.0 | no | - |
| PB0 | 0.0 | no | - |
| PB1 | 0.0 | no | - |
| PCGSL | 0.0 | no | - |
| PCGDL | 0.0 | no | - |
| PCKAPPA | 0.0 | no | - |
| PCF | 0.0 | no | - |
| PCLC | 0.0 | no | - |
| PCLE | 0.0 | no | - |
| PALPHA0 | 0.0 | no | - |
| PALPHA1 | 0.0 | no | - |
| PBETA0 | 0.0 | no | - |
| PVFBCV | 0.0 | no | - |
| PVFB | 0.0 | no | - |
| PACDE | 0.0 | no | - |
| PMOIN | 0.0 | no | - |
| PNOFF | 0.0 | no | - |
| PVOFFCV | 0.0 | no | - |
| KF | 0.0 | no | - |
| AF | 1.0 | no | - |
| EF | 1.0 | no | - |
| Temp | 26.85 | no | simulación de temperatura |
Bsim4V30Nmos¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | bsim4v30nMOS |
Descripción |
bsim4v30nMOS verilog device |
| Schematic entry | bsim4v30nMOS |
| Netlist entry | BSIM4_ |
Tipo |
AnalogComponent |
| Bitmap file | bsim4v30nMOS |
Propiedades |
278 |
| Category | verilog-a devices |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| GMIN | 1e-12 | no | - |
| PS | 12e-6 | no | - |
| PD | 12e-6 | no | - |
| AS | 12e-12 | no | - |
| AD | 12e-12 | no | - |
| CGBO | -99.0 | no | - |
| CGDO | -99.0 | no | - |
| CGSO | -99.0 | no | - |
| L | 3e-6 | no | - |
| W | 6e-6 | no | - |
| MOBMOD | -99.0 | no | - |
| RDSMOD | -99.0 | no | - |
| IGCMOD | 0 | no | - |
| IGBMOD | 0 | no | - |
| CAPMOD | 2 | no | - |
| RGATEMOD | 2 | no | - |
| RBODYMOD | 0 | no | - |
| DIOMOD | 1 | no | - |
| TEMPMOD | -99.0 | no | - |
| GEOMOD | 0 | no | - |
| RGEOMOD | 0 | no | - |
| PERMOD | 1 | no | - |
| TNOIMOD | 0 | no | - |
| FNOIMOD | 0 | no | - |
| EPSROX | 3.9 | no | - |
| TOXE | -99.0 | no | - |
| TOXP | -99.0 | no | - |
| TOXM | -99.0 | no | - |
| DTOX | 0.0 | no | - |
| XJ | 1.5e-7 | no | - |
| GAMMA1 | -99.0 | no | - |
| GAMMA2 | -99.0 | no | - |
| NDEP | -99.0 | no | - |
| NSUB | 6.0e16 | no | - |
| NGATE | 0.0 | no | - |
| NSD | 1.0e20 | no | - |
| VBX | -99.0 | no | - |
| XT | 1.55e-7 | no | - |
| RSH | 0.0 | no | - |
| RSHG | 0.0 | no | - |
| VTH0 | 0.6 | no | - |
| VFB | -99.0 | no | - |
| PHIN | 0.0 | no | - |
| K1 | -99.0 | no | - |
| K2 | -99.0 | no | - |
| K3 | 80.0 | no | - |
| K3B | 0.0 | no | - |
| W0 | 2.5e-6 | no | - |
| LPE0 | 1.74e-7 | no | - |
| LPEB | 0.0 | no | - |
| VBM | -3.0 | no | - |
| DVT0 | 2.2 | no | - |
| DVT1 | 0.53 | no | - |
| DVT2 | -0.032 | no | - |
| DVTP0 | 0.0 | no | - |
| DVTP1 | 0.0 | no | - |
| DVT0W | 0.0 | no | - |
| DVT1W | 5.3e6 | no | - |
| DVT2W | -0.032 | no | - |
| U0 | -99.0 | no | - |
| UA | -99.0 | no | - |
| UB | 1.0e-19 | no | - |
| UC | -99.0 | no | - |
| EU | -99.0 | no | - |
| VSAT | 8.0e4 | no | - |
| A0 | 1.0 | no | - |
| AGS | 0.0 | no | - |
| B0 | 0.0 | no | - |
| B1 | 0.0 | no | - |
| KETA | -0.047 | no | - |
| A1 | 0.0 | no | - |
| A2 | 1.0 | no | - |
| WINT | 0.0 | no | - |
| LINT | 0.0 | no | - |
| DWG | 0.0 | no | - |
| DWB | 0.0 | no | - |
| VOFF | -0.08 | no | - |
| VOFFL | 0.0 | no | - |
| MINV | 0.0 | no | - |
| NFACTOR | 1.0 | no | - |
| ETA0 | 0.08 | no | - |
| ETAB | -0.07 | no | - |
| DROUT | 0.56 | no | - |
| DSUB | 0.56 | no | - |
| CIT | 0.0 | no | - |
| CDSC | 2.4e-4 | no | - |
| CDSCB | 0.0 | no | - |
| CDSCD | 0.0 | no | - |
| PCLM | 1.3 | no | - |
| PDIBL1 | 0.39 | no | - |
| PDIBL2 | 0.0086 | no | - |
| PDIBLB | 0.0 | no | - |
| PSCBE1 | 4.24e8 | no | - |
| PSCBE2 | 1.0e-5 | no | - |
| PVAG | 0.0 | no | - |
| DELTA | 0.01 | no | - |
| FPROUT | 0.0 | no | - |
| PDITS | 0.0 | no | - |
| PDITSD | 0.0 | no | - |
| PDITSL | 0.0 | no | - |
| LAMBDA | -99.0 | no | - |
| VTL | -99.0 | no | - |
| LC | 5.0e-9 | no | - |
| XN | 3.0 | no | - |
| RDSW | 200.0 | no | - |
| RDSWMIN | 0.0 | no | - |
| RDW | 100.0 | no | - |
| RDWMIN | 0.0 | no | - |
| RSW | 100.0 | no | - |
| RSWMIN | 0.0 | no | - |
| PRWG | 1.0 | no | - |
| PRWB | 0.0 | no | - |
| WR | 1.0 | no | - |
| NRS | -99.0 | no | - |
| NRD | -99.0 | no | - |
| ALPHA0 | 0.0 | no | - |
| ALPHA1 | 0.0 | no | - |
| BETA0 | 30.0 | no | - |
| AGIDL | 0.0 | no | - |
| BGIDL | 2.3e9 | no | - |
| CGIDL | 0.5 | no | - |
| EGIDL | 0.8 | no | - |
| AIGBACC | 0.43 | no | - |
| BIGBACC | 0.054 | no | - |
| CIGBACC | 0.075 | no | - |
| NIGBACC | 1.0 | no | - |
| AIGBINV | 0.35 | no | - |
| BIGBINV | 0.03 | no | - |
| CIGBINV | 0.006 | no | - |
| EIGBINV | 1.1 | no | - |
| NIGBINV | 3.0 | no | - |
| AIGC | -99.0 | no | - |
| BIGC | -99.0 | no | - |
| CIGC | -99.0 | no | - |
| AIGSD | -99.0 | no | - |
| BIGSD | -99.0 | no | - |
| CIGSD | -99.0 | no | - |
| DLCIG | 0.0 | no | - |
| NIGC | 1.0 | no | - |
| POXEDGE | 1.0 | no | - |
| PIGCD | 1.0 | no | - |
| NTOX | 1.0 | no | - |
| TOXREF | 3.0e-9 | no | - |
| XPART | 0.4 | no | - |
| CGS0 | 0.0 | no | - |
| CGD0 | 0.0 | no | - |
| CGB0 | 0.0 | no | - |
| CGSL | 0.0 | no | - |
| CGDL | 0.0 | no | - |
| CKAPPAS | 0.6 | no | - |
| CKAPPAD | 0.6 | no | - |
| CF | -99.0 | no | - |
| CLC | 1.0e-7 | no | - |
| CLE | 0.6 | no | - |
| DLC | 0.0 | no | - |
| DWC | 0.0 | no | - |
| VFBCV | -1.0 | no | - |
| NOFF | 1.0 | no | - |
| VOFFCV | 0.0 | no | - |
| ACDE | 1.0 | no | - |
| MOIN | 15.0 | no | - |
| XRCRG1 | 12.0 | no | - |
| XRCRG2 | 1.0 | no | - |
| RBPB | 50.0 | no | - |
| RBPD | 50.0 | no | - |
| RBPS | 50.0 | no | - |
| RBDB | 50.0 | no | - |
| RBSB | 50.0 | no | - |
| GBMIN | 1.0e-12 | no | - |
| DMCG | 0.0 | no | - |
| DMCI | 0.0 | no | - |
| DMDG | 0.0 | no | - |
| DMCGT | 0.0 | no | - |
| NF | 1.0 | no | - |
| DWJ | 0.0 | no | - |
| MIN | 0.0 | no | - |
| XGW | 0.0 | no | - |
| XGL | 0.0 | no | - |
| XL | 0.0 | no | - |
| XW | 0.0 | no | - |
| NGCON | 1.0 | no | - |
| IJTHSREV | 0.1 | no | - |
| IJTHDREV | 0.1 | no | - |
| IJTHSFWD | 0.1 | no | - |
| IJTHDFWD | 0.1 | no | - |
| XJBVS | 1.0 | no | - |
| XJBVD | 1.0 | no | - |
| BVS | 10.0 | no | - |
| BVD | 10.0 | no | - |
| JSS | 1.0e-4 | no | - |
| JSD | 1.0e-4 | no | - |
| JSWS | 0.0 | no | - |
| JSWD | 0.0 | no | - |
| JSWGS | 0.0 | no | - |
| JSWGD | 0.0 | no | - |
| CJS | 5.0e-4 | no | - |
| CJD | 5.0e-4 | no | - |
| MJS | 0.5 | no | - |
| MJD | 0.5 | no | - |
| MJSWS | 0.33 | no | - |
| MJSWD | 0.33 | no | - |
| CJSWS | 5.0e-10 | no | - |
| CJSWD | 5.0e-10 | no | - |
| CJSWGS | 5.0e-10 | no | - |
| CJSWGD | 5.0e-10 | no | - |
| MJSWGS | 0.33 | no | - |
| MJSWGD | 0.33 | no | - |
| PBS | 1.0 | no | - |
| PBD | 1.0 | no | - |
| PBSWS | 1.0 | no | - |
| PBSWD | 1.0 | no | - |
| PBSWGS | 1.0 | no | - |
| PBSWGD | 1.0 | no | - |
| TNOM | 27 | no | - |
| UTE | -1.5 | no | - |
| KT1 | -0.11 | no | - |
| KT1L | 0.0 | no | - |
| KT2 | 0.022 | no | - |
| UA1 | 1.0e-9 | no | - |
| UB1 | -1.0e-18 | no | - |
| UC1 | -99.0 | no | - |
| AT | 3.3e4 | no | - |
| PRT | 0.0 | no | - |
| NJS | 1.0 | no | - |
| NJD | 1.0 | no | - |
| XTIS | 3.0 | no | - |
| XTID | 3.0 | no | - |
| TPB | 0.0 | no | - |
| TPBSW | 0.0 | no | - |
| TPBSWG | 0.0 | no | - |
| TCJ | 0.0 | no | - |
| TCJSW | 0.0 | no | - |
| TCJSWG | 0.0 | no | - |
| SA | 0.0 | no | - |
| SB | 0.0 | no | - |
| SD | 0.0 | no | - |
| SAREF | 1e-6 | no | - |
| SBREF | 1e-6 | no | - |
| WLOD | 0.0 | no | - |
| KU0 | 0.0 | no | - |
| KVSAT | 0.0 | no | - |
| TKU0 | 0.0 | no | - |
| LKU0 | 0.0 | no | - |
| WKU0 | 0.0 | no | - |
| PKU0 | 0.0 | no | - |
| LLODKU0 | 0.0 | no | - |
| WLODKU0 | 0.0 | no | - |
| KVTH0 | 0.0 | no | - |
| LKVTH0 | 0.0 | no | - |
| WKVTH0 | 0.0 | no | - |
| PKVTH0 | 0.0 | no | - |
| LLODVTH | 0.0 | no | - |
| WLODVTH | 0.0 | no | - |
| STK2 | 0.0 | no | - |
| LODK2 | 1.0 | no | - |
| STETA0 | 0.0 | no | - |
| LODETA0 | 1.0 | no | - |
| WL | 0.0 | no | - |
| WLN | 1.0 | no | - |
| WW | 0.0 | no | - |
| WWN | 1.0 | no | - |
| WWL | 0.0 | no | - |
| LL | 0.0 | no | - |
| LLN | 1.0 | no | - |
| LW | 0.0 | no | - |
| LWN | 1.0 | no | - |
| LWL | 0.0 | no | - |
| LLC | 0.0 | no | - |
| LWC | 0.0 | no | - |
| LWLC | 0.0 | no | - |
| WLC | 0.0 | no | - |
| WWC | 0.0 | no | - |
| WWLC | 0.0 | no | - |
| NTNOI | 1.0 | no | - |
| KF | 0.0 | no | - |
| AF | 1.0 | no | - |
| EF | 1.0 | no | - |
| TEMP | 27 | no | - |
Bsim4V30Pmos¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | bsim4v30pMOS |
Descripción |
bsim4v30pMOS verilog device |
| Schematic entry | bsim4v30pMOS |
| Netlist entry | BSIM4_ |
Tipo |
AnalogComponent |
| Bitmap file | bsim4v30pMOS |
Propiedades |
278 |
| Category | verilog-a devices |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| GMIN | 1e-12 | no | - |
| PS | 12e-6 | no | - |
| PD | 12e-6 | no | - |
| AS | 12e-12 | no | - |
| AD | 12e-12 | no | - |
| CGBO | -99.0 | no | - |
| CGDO | -99.0 | no | - |
| CGSO | -99.0 | no | - |
| L | 3e-6 | no | - |
| W | 6e-6 | no | - |
| MOBMOD | -99.0 | no | - |
| RDSMOD | -99.0 | no | - |
| IGCMOD | 0 | no | - |
| IGBMOD | 0 | no | - |
| CAPMOD | 2 | no | - |
| RGATEMOD | 2 | no | - |
| RBODYMOD | 0 | no | - |
| DIOMOD | 1 | no | - |
| TEMPMOD | -99.0 | no | - |
| GEOMOD | 0 | no | - |
| RGEOMOD | 0 | no | - |
| PERMOD | 1 | no | - |
| TNOIMOD | 0 | no | - |
| FNOIMOD | 0 | no | - |
| EPSROX | 3.9 | no | - |
| TOXE | -99.0 | no | - |
| TOXP | -99.0 | no | - |
| TOXM | -99.0 | no | - |
| DTOX | 0.0 | no | - |
| XJ | 1.5e-7 | no | - |
| GAMMA1 | -99.0 | no | - |
| GAMMA2 | -99.0 | no | - |
| NDEP | -99.0 | no | - |
| NSUB | 6.0e16 | no | - |
| NGATE | 0.0 | no | - |
| NSD | 1.0e20 | no | - |
| VBX | -99.0 | no | - |
| XT | 1.55e-7 | no | - |
| RSH | 0.0 | no | - |
| RSHG | 0.0 | no | - |
| VTH0 | -0.6 | no | - |
| VFB | -99.0 | no | - |
| PHIN | 0.0 | no | - |
| K1 | -99.0 | no | - |
| K2 | -99.0 | no | - |
| K3 | 80.0 | no | - |
| K3B | 0.0 | no | - |
| W0 | 2.5e-6 | no | - |
| LPE0 | 1.74e-7 | no | - |
| LPEB | 0.0 | no | - |
| VBM | -3.0 | no | - |
| DVT0 | 2.2 | no | - |
| DVT1 | 0.53 | no | - |
| DVT2 | -0.032 | no | - |
| DVTP0 | 0.0 | no | - |
| DVTP1 | 0.0 | no | - |
| DVT0W | 0.0 | no | - |
| DVT1W | 5.3e6 | no | - |
| DVT2W | -0.032 | no | - |
| U0 | -99.0 | no | - |
| UA | -99.0 | no | - |
| UB | 1.0e-19 | no | - |
| UC | -99.0 | no | - |
| EU | -99.0 | no | - |
| VSAT | 8.0e4 | no | - |
| A0 | 1.0 | no | - |
| AGS | 0.0 | no | - |
| B0 | 0.0 | no | - |
| B1 | 0.0 | no | - |
| KETA | -0.047 | no | - |
| A1 | 0.0 | no | - |
| A2 | 1.0 | no | - |
| WINT | 0.0 | no | - |
| LINT | 0.0 | no | - |
| DWG | 0.0 | no | - |
| DWB | 0.0 | no | - |
| VOFF | -0.08 | no | - |
| VOFFL | 0.0 | no | - |
| MINV | 0.0 | no | - |
| NFACTOR | 1.0 | no | - |
| ETA0 | 0.08 | no | - |
| ETAB | -0.07 | no | - |
| DROUT | 0.56 | no | - |
| DSUB | 0.56 | no | - |
| CIT | 0.0 | no | - |
| CDSC | 2.4e-4 | no | - |
| CDSCB | 0.0 | no | - |
| CDSCD | 0.0 | no | - |
| PCLM | 1.3 | no | - |
| PDIBL1 | 0.39 | no | - |
| PDIBL2 | 0.0086 | no | - |
| PDIBLB | 0.0 | no | - |
| PSCBE1 | 4.24e8 | no | - |
| PSCBE2 | 1.0e-5 | no | - |
| PVAG | 0.0 | no | - |
| DELTA | 0.01 | no | - |
| FPROUT | 0.0 | no | - |
| PDITS | 0.0 | no | - |
| PDITSD | 0.0 | no | - |
| PDITSL | 0.0 | no | - |
| LAMBDA | -99.0 | no | - |
| VTL | -99.0 | no | - |
| LC | 5.0e-9 | no | - |
| XN | 3.0 | no | - |
| RDSW | 200.0 | no | - |
| RDSWMIN | 0.0 | no | - |
| RDW | 100.0 | no | - |
| RDWMIN | 0.0 | no | - |
| RSW | 100.0 | no | - |
| RSWMIN | 0.0 | no | - |
| PRWG | 1.0 | no | - |
| PRWB | 0.0 | no | - |
| WR | 1.0 | no | - |
| NRS | -99.0 | no | - |
| NRD | -99.0 | no | - |
| ALPHA0 | 0.0 | no | - |
| ALPHA1 | 0.0 | no | - |
| BETA0 | 30.0 | no | - |
| AGIDL | 0.0 | no | - |
| BGIDL | 2.3e9 | no | - |
| CGIDL | 0.5 | no | - |
| EGIDL | 0.8 | no | - |
| AIGBACC | 0.43 | no | - |
| BIGBACC | 0.054 | no | - |
| CIGBACC | 0.075 | no | - |
| NIGBACC | 1.0 | no | - |
| AIGBINV | 0.35 | no | - |
| BIGBINV | 0.03 | no | - |
| CIGBINV | 0.006 | no | - |
| EIGBINV | 1.1 | no | - |
| NIGBINV | 3.0 | no | - |
| AIGC | -99.0 | no | - |
| BIGC | -99.0 | no | - |
| CIGC | -99.0 | no | - |
| AIGSD | -99.0 | no | - |
| BIGSD | -99.0 | no | - |
| CIGSD | -99.0 | no | - |
| DLCIG | 0.0 | no | - |
| NIGC | 1.0 | no | - |
| POXEDGE | 1.0 | no | - |
| PIGCD | 1.0 | no | - |
| NTOX | 1.0 | no | - |
| TOXREF | 3.0e-9 | no | - |
| XPART | 0.4 | no | - |
| CGS0 | 0.0 | no | - |
| CGD0 | 0.0 | no | - |
| CGB0 | 0.0 | no | - |
| CGSL | 0.0 | no | - |
| CGDL | 0.0 | no | - |
| CKAPPAS | 0.6 | no | - |
| CKAPPAD | 0.6 | no | - |
| CF | -99.0 | no | - |
| CLC | 1.0e-7 | no | - |
| CLE | 0.6 | no | - |
| DLC | 0.0 | no | - |
| DWC | 0.0 | no | - |
| VFBCV | -1.0 | no | - |
| NOFF | 1.0 | no | - |
| VOFFCV | 0.0 | no | - |
| ACDE | 1.0 | no | - |
| MOIN | 15.0 | no | - |
| XRCRG1 | 12.0 | no | - |
| XRCRG2 | 1.0 | no | - |
| RBPB | 50.0 | no | - |
| RBPD | 50.0 | no | - |
| RBPS | 50.0 | no | - |
| RBDB | 50.0 | no | - |
| RBSB | 50.0 | no | - |
| GBMIN | 1.0e-12 | no | - |
| DMCG | 0.0 | no | - |
| DMCI | 0.0 | no | - |
| DMDG | 0.0 | no | - |
| DMCGT | 0.0 | no | - |
| NF | 1.0 | no | - |
| DWJ | 0.0 | no | - |
| MIN | 0.0 | no | - |
| XGW | 0.0 | no | - |
| XGL | 0.0 | no | - |
| XL | 0.0 | no | - |
| XW | 0.0 | no | - |
| NGCON | 1.0 | no | - |
| IJTHSREV | 0.1 | no | - |
| IJTHDREV | 0.1 | no | - |
| IJTHSFWD | 0.1 | no | - |
| IJTHDFWD | 0.1 | no | - |
| XJBVS | 1.0 | no | - |
| XJBVD | 1.0 | no | - |
| BVS | 10.0 | no | - |
| BVD | 10.0 | no | - |
| JSS | 1.0e-4 | no | - |
| JSD | 1.0e-4 | no | - |
| JSWS | 0.0 | no | - |
| JSWD | 0.0 | no | - |
| JSWGS | 0.0 | no | - |
| JSWGD | 0.0 | no | - |
| CJS | 5.0e-4 | no | - |
| CJD | 5.0e-4 | no | - |
| MJS | 0.5 | no | - |
| MJD | 0.5 | no | - |
| MJSWS | 0.33 | no | - |
| MJSWD | 0.33 | no | - |
| CJSWS | 5.0e-10 | no | - |
| CJSWD | 5.0e-10 | no | - |
| CJSWGS | 5.0e-10 | no | - |
| CJSWGD | 5.0e-10 | no | - |
| MJSWGS | 0.33 | no | - |
| MJSWGD | 0.33 | no | - |
| PBS | 1.0 | no | - |
| PBD | 1.0 | no | - |
| PBSWS | 1.0 | no | - |
| PBSWD | 1.0 | no | - |
| PBSWGS | 1.0 | no | - |
| PBSWGD | 1.0 | no | - |
| TNOM | 27 | no | - |
| UTE | -1.5 | no | - |
| KT1 | -0.11 | no | - |
| KT1L | 0.0 | no | - |
| KT2 | 0.022 | no | - |
| UA1 | 1.0e-9 | no | - |
| UB1 | -1.0e-18 | no | - |
| UC1 | -99.0 | no | - |
| AT | 3.3e4 | no | - |
| PRT | 0.0 | no | - |
| NJS | 1.0 | no | - |
| NJD | 1.0 | no | - |
| XTIS | 3.0 | no | - |
| XTID | 3.0 | no | - |
| TPB | 0.0 | no | - |
| TPBSW | 0.0 | no | - |
| TPBSWG | 0.0 | no | - |
| TCJ | 0.0 | no | - |
| TCJSW | 0.0 | no | - |
| TCJSWG | 0.0 | no | - |
| SA | 0.0 | no | - |
| SB | 0.0 | no | - |
| SD | 0.0 | no | - |
| SAREF | 1e-6 | no | - |
| SBREF | 1e-6 | no | - |
| WLOD | 0.0 | no | - |
| KU0 | 0.0 | no | - |
| KVSAT | 0.0 | no | - |
| TKU0 | 0.0 | no | - |
| LKU0 | 0.0 | no | - |
| WKU0 | 0.0 | no | - |
| PKU0 | 0.0 | no | - |
| LLODKU0 | 0.0 | no | - |
| WLODKU0 | 0.0 | no | - |
| KVTH0 | 0.0 | no | - |
| LKVTH0 | 0.0 | no | - |
| WKVTH0 | 0.0 | no | - |
| PKVTH0 | 0.0 | no | - |
| LLODVTH | 0.0 | no | - |
| WLODVTH | 0.0 | no | - |
| STK2 | 0.0 | no | - |
| LODK2 | 1.0 | no | - |
| STETA0 | 0.0 | no | - |
| LODETA0 | 1.0 | no | - |
| WL | 0.0 | no | - |
| WLN | 1.0 | no | - |
| WW | 0.0 | no | - |
| WWN | 1.0 | no | - |
| WWL | 0.0 | no | - |
| LL | 0.0 | no | - |
| LLN | 1.0 | no | - |
| LW | 0.0 | no | - |
| LWN | 1.0 | no | - |
| LWL | 0.0 | no | - |
| LLC | 0.0 | no | - |
| LWC | 0.0 | no | - |
| LWLC | 0.0 | no | - |
| WLC | 0.0 | no | - |
| WWC | 0.0 | no | - |
| WWLC | 0.0 | no | - |
| NTNOI | 1.0 | no | - |
| KF | 0.0 | no | - |
| AF | 1.0 | no | - |
| EF | 1.0 | no | - |
| TEMP | 27 | no | - |
Npn Hicum L0 V1.2¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | npn HICUM L0 v1.2 |
Descripción |
HICUM Level 0 v1.2 verilog device |
| Schematic entry | hicumL0V1p2 |
| Netlist entry | T |
Tipo |
AnalogComponent |
| Bitmap file | npnsub_therm |
Propiedades |
94 |
| Category | verilog-a devices |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
Tipo |
npn | Sí |
polarity [npn, pnp] |
| is | 1.0e-16 | no | (Modified) saturation current (A) |
| mcf | 1.00 | no | Coeficiente no ideal de la corriente directa de colector |
| mcr | 1.00 | no | Coeficiente no ideal de la corriente inversa de colector |
| vef | 1.0e6 | no | forward Early voltage (normalization volt.) (V) |
| ver | 1.0e6 | no | reverse Early voltage (normalization volt.) (V) |
| iqf | 1.0e6 | no | forward d.c. high-injection roll-off current (A) |
| fiqf | 0 | no | flag for turning on base related critical current |
| iqr | 1.0e6 | no | inverse d.c. high-injection roll-off current (A) |
| iqfh | 1.0e6 | no | high-injection correction current (A) |
| tfh | 0.0 | no | factor de corrección de alta inyección |
| ahq | 0 | no | Smoothing factor for the d.c. injection width |
| ibes | 1e-18 | no | BE saturation current (A) |
| mbe | 1.0 | no | factor no ideal BE |
| ires | 0.0 | no | BE recombination saturation current (A) |
| mre | 2.0 | no | factor no ideal de recombinación BE |
| ibcs | 0.0 | no | BC saturation current (A) |
| mbc | 1.0 | no | factor no ideal BC |
| cje0 | 1.0e-20 | no | Zero-bias BE depletion capacitance (F) |
| vde | 0.9 | no | BE built-in voltage (V) |
| ze | 0.5 | no | factor exponencial BE |
| aje | 2.5 | no | Razón de máximo a valor de polarización cero |
| vdedc | 0.9 | no | BE charge built-in voltage for d.c. transfer current (V) |
| zedc | 0.5 | no | charge BE exponent factor for d.c. transfer current |
| ajedc | 2.5 | no | BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current |
| t0 | 0.0 | no | low current transit time at Vbici=0 (s) |
| dt0h | 0.0 | no | Base width modulation contribution (s) |
| tbvl | 0.0 | no | SCR width modulation contribution (s) |
| tef0 | 0.0 | no | Storage time in neutral emitter (s) |
| gte | 1.0 | no | Exponent factor for emitter transit time |
| thcs | 0.0 | no | Saturation time at high current densities (s) |
| ahc | 0.1 | no | Smoothing factor for current dependence |
| tr | 0.0 | no | Storage time at inverse operation (s) |
| rci0 | 150 | no | Low-field collector resistance under emitter (Ohm) |
| vlim | 0.5 | no | Voltage dividing ohmic and satur.region (V) |
| vpt | 100 | no | Punch-through voltage (V) |
| vces | 0.1 | no | Saturation voltage (V) |
| cjci0 | 1.0e-20 | no | Total zero-bias BC depletion capacitance (F) |
| vdci | 0.7 | no | BC built-in voltage (V) |
| zci | 0.333 | no | factor exponencial BC |
| vptci | 100 | no | Punch-through voltage of BC junction (V) |
| cjcx0 | 1.0e-20 | no | Zero-bias external BC depletion capacitance (F) |
| vdcx | 0.7 | no | External BC built-in voltage (V) |
| zcx | 0.333 | no | Factor exponencial externo de la unión BC |
| vptcx | 100 | no | Punch-through voltage (V) |
| fbc | 1.0 | no | Factor de separación = Cjci0/Cjc0 |
| rbi0 | 0.0 | no | Internal base resistance at zero-bias (Ohm) |
| vr0e | 2.5 | no | forward Early voltage (normalization volt.) (V) |
| vr0c | 1.0e6 | no | forward Early voltage (normalization volt.) (V) |
| fgeo | 0.656 | no | Factor de geometría |
| rbx | 0.0 | no | External base series resistance (Ohm) |
| rcx | 0.0 | no | Emitter series resistance (Ohm) |
| re | 0.0 | no | External collector series resistance (Ohm) |
| itss | 0.0 | no | Substrate transistor transfer saturation current (A) |
| msf | 1.0 | no | Factor no ideal de transferencia del sustrato de transistor |
| iscs | 0.0 | no | SC saturation current (A) |
| msc | 1.0 | no | Factor no ideal SC |
| cjs0 | 1.0e-20 | no | Zero-bias SC depletion capacitance (F) |
| vds | 0.3 | no | SC built-in voltage (V) |
| zs | 0.3 | no | Factor exponencial externo de la unión SC |
| vpts | 100 | no | SC punch-through voltage (V) |
| cbcpar | 0.0 | no | Collector-base isolation (overlap) capacitance (F) |
| cbepar | 0.0 | no | Emitter-base oxide capacitance (F) |
| eavl | 0.0 | no | Factor exponencial |
| kavl | 0.0 | no | Prefactor |
| kf | 0.0 | no | flicker noise coefficient (M^(1-AF)) |
| af | 2.0 | no | factor exponencial de ruido de centelleo |
| vgb | 1.2 | no | Bandgap-voltage (V) |
| vge | 1.17 | no | Effective emitter bandgap-voltage (V) |
| vgc | 1.17 | no | Effective collector bandgap-voltage (V) |
| vgs | 1.17 | no | Effective substrate bandgap-voltage (V) |
| f1vg | -1.02377e-4 | no | Coefficient K1 in T-dependent bandgap equation (V/K) |
| f2vg | 4.3215e-4 | no | Coefficient K2 in T-dependent bandgap equation (V/K) |
| alt0 | 0.0 | no | Frist-order TC of tf0 (1/K) |
| kt0 | 0.0 | no | Second-order TC of tf0 (1/K^2) |
| zetact | 3.0 | no | Coeficiente exponencial de transferencia de corriente en función de la temperatura |
| zetabet | 3.5 | no | Coeficiente exponencial en función de la temperatura en la corriente de la unión BE |
| zetaci | 0.0 | no | TC de difusividad epi-colector |
| alvs | 0.0 | no | Relative TC of satur.drift velocity (1/K) |
| alces | 0.0 | no | Relative TC of vces (1/K) |
| zetarbi | 0.0 | no | TC de la resistencia interna de base |
| zetarbx | 0.0 | no | TC de la resistencia externa de base |
| zetarcx | 0.0 | no | TC de la resistencia externa de colector |
| zetare | 0.0 | no | TC de resistencias de emisor |
| zetaiqf | 0.0 | no | TC of iqf |
| alkav | 0.0 | no | TC of avalanche prefactor (1/K) |
| aleav | 0.0 | no | TC of avalanche exponential factor (1/K) |
| zetarth | 0.0 | no | Exponent factor for temperature dependent thermal resistance |
| flsh | 0 | no | Marcador para el cálculo del autocalentamiento |
| rth | 0.0 | no | Thermal resistance (K/W) |
| cth | 0.0 | no | Thermal capacitance (Ws/K) |
| tnom | 27 | no | Temperature for which parameters are valid (C) |
| dt | 0.0 | no | Temperature change for particular transistor (K) |
| Temp | 27 | no | simulación de temperatura |
Pnp Hicum L0 V1.2¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | pnp HICUM L0 v1.2 |
Descripción |
HICUM Level 0 v1.2 verilog device |
| Schematic entry | hicumL0V1p2 |
| Netlist entry | T |
Tipo |
AnalogComponent |
| Bitmap file | pnpsub_therm |
Propiedades |
94 |
| Category | verilog-a devices |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
Tipo |
pnp | Sí |
polarity [npn, pnp] |
| is | 1.0e-16 | no | (Modified) saturation current (A) |
| mcf | 1.00 | no | Coeficiente no ideal de la corriente directa de colector |
| mcr | 1.00 | no | Coeficiente no ideal de la corriente inversa de colector |
| vef | 1.0e6 | no | forward Early voltage (normalization volt.) (V) |
| ver | 1.0e6 | no | reverse Early voltage (normalization volt.) (V) |
| iqf | 1.0e6 | no | forward d.c. high-injection roll-off current (A) |
| fiqf | 0 | no | flag for turning on base related critical current |
| iqr | 1.0e6 | no | inverse d.c. high-injection roll-off current (A) |
| iqfh | 1.0e6 | no | high-injection correction current (A) |
| tfh | 0.0 | no | factor de corrección de alta inyección |
| ahq | 0 | no | Smoothing factor for the d.c. injection width |
| ibes | 1e-18 | no | BE saturation current (A) |
| mbe | 1.0 | no | factor no ideal BE |
| ires | 0.0 | no | BE recombination saturation current (A) |
| mre | 2.0 | no | factor no ideal de recombinación BE |
| ibcs | 0.0 | no | BC saturation current (A) |
| mbc | 1.0 | no | factor no ideal BC |
| cje0 | 1.0e-20 | no | Zero-bias BE depletion capacitance (F) |
| vde | 0.9 | no | BE built-in voltage (V) |
| ze | 0.5 | no | factor exponencial BE |
| aje | 2.5 | no | Razón de máximo a valor de polarización cero |
| vdedc | 0.9 | no | BE charge built-in voltage for d.c. transfer current (V) |
| zedc | 0.5 | no | charge BE exponent factor for d.c. transfer current |
| ajedc | 2.5 | no | BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current |
| t0 | 0.0 | no | low current transit time at Vbici=0 (s) |
| dt0h | 0.0 | no | Base width modulation contribution (s) |
| tbvl | 0.0 | no | SCR width modulation contribution (s) |
| tef0 | 0.0 | no | Storage time in neutral emitter (s) |
| gte | 1.0 | no | Exponent factor for emitter transit time |
| thcs | 0.0 | no | Saturation time at high current densities (s) |
| ahc | 0.1 | no | Smoothing factor for current dependence |
| tr | 0.0 | no | Storage time at inverse operation (s) |
| rci0 | 150 | no | Low-field collector resistance under emitter (Ohm) |
| vlim | 0.5 | no | Voltage dividing ohmic and satur.region (V) |
| vpt | 100 | no | Punch-through voltage (V) |
| vces | 0.1 | no | Saturation voltage (V) |
| cjci0 | 1.0e-20 | no | Total zero-bias BC depletion capacitance (F) |
| vdci | 0.7 | no | BC built-in voltage (V) |
| zci | 0.333 | no | factor exponencial BC |
| vptci | 100 | no | Punch-through voltage of BC junction (V) |
| cjcx0 | 1.0e-20 | no | Zero-bias external BC depletion capacitance (F) |
| vdcx | 0.7 | no | External BC built-in voltage (V) |
| zcx | 0.333 | no | Factor exponencial externo de la unión BC |
| vptcx | 100 | no | Punch-through voltage (V) |
| fbc | 1.0 | no | Factor de separación = Cjci0/Cjc0 |
| rbi0 | 0.0 | no | Internal base resistance at zero-bias (Ohm) |
| vr0e | 2.5 | no | forward Early voltage (normalization volt.) (V) |
| vr0c | 1.0e6 | no | forward Early voltage (normalization volt.) (V) |
| fgeo | 0.656 | no | Factor de geometría |
| rbx | 0.0 | no | External base series resistance (Ohm) |
| rcx | 0.0 | no | Emitter series resistance (Ohm) |
| re | 0.0 | no | External collector series resistance (Ohm) |
| itss | 0.0 | no | Substrate transistor transfer saturation current (A) |
| msf | 1.0 | no | Factor no ideal de transferencia del sustrato de transistor |
| iscs | 0.0 | no | SC saturation current (A) |
| msc | 1.0 | no | Factor no ideal SC |
| cjs0 | 1.0e-20 | no | Zero-bias SC depletion capacitance (F) |
| vds | 0.3 | no | SC built-in voltage (V) |
| zs | 0.3 | no | Factor exponencial externo de la unión SC |
| vpts | 100 | no | SC punch-through voltage (V) |
| cbcpar | 0.0 | no | Collector-base isolation (overlap) capacitance (F) |
| cbepar | 0.0 | no | Emitter-base oxide capacitance (F) |
| eavl | 0.0 | no | Factor exponencial |
| kavl | 0.0 | no | Prefactor |
| kf | 0.0 | no | flicker noise coefficient (M^(1-AF)) |
| af | 2.0 | no | factor exponencial de ruido de centelleo |
| vgb | 1.2 | no | Bandgap-voltage (V) |
| vge | 1.17 | no | Effective emitter bandgap-voltage (V) |
| vgc | 1.17 | no | Effective collector bandgap-voltage (V) |
| vgs | 1.17 | no | Effective substrate bandgap-voltage (V) |
| f1vg | -1.02377e-4 | no | Coefficient K1 in T-dependent bandgap equation (V/K) |
| f2vg | 4.3215e-4 | no | Coefficient K2 in T-dependent bandgap equation (V/K) |
| alt0 | 0.0 | no | Frist-order TC of tf0 (1/K) |
| kt0 | 0.0 | no | Second-order TC of tf0 (1/K^2) |
| zetact | 3.0 | no | Coeficiente exponencial de transferencia de corriente en función de la temperatura |
| zetabet | 3.5 | no | Coeficiente exponencial en función de la temperatura en la corriente de la unión BE |
| zetaci | 0.0 | no | TC de difusividad epi-colector |
| alvs | 0.0 | no | Relative TC of satur.drift velocity (1/K) |
| alces | 0.0 | no | Relative TC of vces (1/K) |
| zetarbi | 0.0 | no | TC de la resistencia interna de base |
| zetarbx | 0.0 | no | TC de la resistencia externa de base |
| zetarcx | 0.0 | no | TC de la resistencia externa de colector |
| zetare | 0.0 | no | TC de resistencias de emisor |
| zetaiqf | 0.0 | no | TC of iqf |
| alkav | 0.0 | no | TC of avalanche prefactor (1/K) |
| aleav | 0.0 | no | TC of avalanche exponential factor (1/K) |
| zetarth | 0.0 | no | Exponent factor for temperature dependent thermal resistance |
| flsh | 0 | no | Marcador para el cálculo del autocalentamiento |
| rth | 0.0 | no | Thermal resistance (K/W) |
| cth | 0.0 | no | Thermal capacitance (Ws/K) |
| tnom | 27 | no | Temperature for which parameters are valid (C) |
| dt | 0.0 | no | Temperature change for particular transistor (K) |
| Temp | 27 | no | simulación de temperatura |
Npn Hicum L0 V1.2G¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | npn HICUM L0 v1.2g |
Descripción |
HICUM Level 0 v1.2g verilog device |
| Schematic entry | hicumL0V1p2g |
| Netlist entry | T |
Tipo |
AnalogComponent |
| Bitmap file | npnsub_therm |
Propiedades |
99 |
| Category | verilog-a devices |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
Tipo |
npn | Sí |
polarity [npn, pnp] |
| is | 1.0e-16 | no | (Modified) saturation current (A) |
| mcf | 1.00 | no | Coeficiente no ideal de la corriente directa de colector |
| mcr | 1.00 | no | Coeficiente no ideal de la corriente inversa de colector |
| vef | 1.0e6 | no | forward Early voltage (normalization volt.) (V) |
| ver | 1.0e6 | no | reverse Early voltage (normalization volt.) (V) |
| iqf | 1.0e6 | no | forward d.c. high-injection roll-off current (A) |
| fiqf | 0 | no | flag for turning on base related critical current |
| iqr | 1.0e6 | no | inverse d.c. high-injection roll-off current (A) |
| iqfh | 1.0e6 | no | high-injection correction current (A) |
| iqfe | 0.0 | no | high-injection roll-off current |
| ahq | 0.0 | no | Smoothing factor for the d.c. injection width |
| ibes | 1e-18 | no | BE saturation current (A) |
| mbe | 1.0 | no | factor no ideal BE |
| ires | 0.0 | no | BE recombination saturation current (A) |
| mre | 2.0 | no | factor no ideal de recombinación BE |
| ibcs | 0.0 | no | BC saturation current (A) |
| mbc | 1.0 | no | factor no ideal BC |
| cje0 | 1.0e-20 | no | Zero-bias BE depletion capacitance (F) |
| vde | 0.9 | no | BE built-in voltage (V) |
| ze | 0.5 | no | factor exponencial BE |
| aje | 2.5 | no | Razón de máximo a valor de polarización cero |
| vdedc | 0.9 | no | BE charge built-in voltage for d.c. transfer current (V) |
| zedc | 0.5 | no | charge BE exponent factor for d.c. transfer current |
| ajedc | 2.5 | no | BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current |
| t0 | 0.0 | no | low current transit time at Vbici=0 (s) |
| dt0h | 0.0 | no | Base width modulation contribution (s) |
| tbvl | 0.0 | no | SCR width modulation contribution (s) |
| tef0 | 0.0 | no | Storage time in neutral emitter (s) |
| gte | 1.0 | no | Exponent factor for emitter transit time |
| thcs | 0.0 | no | Saturation time at high current densities (s) |
| ahc | 0.1 | no | Smoothing factor for current dependence |
| tr | 0.0 | no | Storage time at inverse operation (s) |
| rci0 | 150 | no | Low-field collector resistance under emitter (Ohm) |
| vlim | 0.5 | no | Voltage dividing ohmic and satur.region (V) |
| vpt | 100.0 | no | Punch-through voltage (V) |
| vces | 0.1 | no | Saturation voltage (V) |
| cjci0 | 1.0e-20 | no | Total zero-bias BC depletion capacitance (F) |
| vdci | 0.7 | no | BC built-in voltage (V) |
| zci | 0.333 | no | factor exponencial BC |
| vptci | 100.0 | no | Punch-through voltage of BC junction (V) |
| cjcx0 | 1.0e-20 | no | Zero-bias external BC depletion capacitance (F) |
| vdcx | 0.7 | no | External BC built-in voltage (V) |
| zcx | 0.333 | no | Factor exponencial externo de la unión BC |
| vptcx | 100.0 | no | Punch-through voltage (V) |
| fbc | 1.0 | no | Factor de separación = Cjci0/Cjc0 |
| rbi0 | 0.0 | no | Internal base resistance at zero-bias (Ohm) |
| vr0e | 2.5 | no | forward Early voltage (normalization volt.) (V) |
| vr0c | 1.0e6 | no | forward Early voltage (normalization volt.) (V) |
| fgeo | 0.656 | no | Factor de geometría |
| rbx | 0.0 | no | External base series resistance (Ohm) |
| rcx | 0.0 | no | Emitter series resistance (Ohm) |
| re | 0.0 | no | External collector series resistance (Ohm) |
| itss | 0.0 | no | Substrate transistor transfer saturation current (A) |
| msf | 1.0 | no | Factor no ideal de transferencia del sustrato de transistor |
| iscs | 0.0 | no | SC saturation current (A) |
| msc | 1.0 | no | Factor no ideal SC |
| cjs0 | 1.0e-20 | no | Zero-bias SC depletion capacitance (F) |
| vds | 0.3 | no | SC built-in voltage (V) |
| zs | 0.3 | no | Factor exponencial externo de la unión SC |
| vpts | 100.0 | no | SC punch-through voltage (V) |
| cbcpar | 0.0 | no | Collector-base isolation (overlap) capacitance (F) |
| cbepar | 0.0 | no | Emitter-base oxide capacitance (F) |
| eavl | 0.0 | no | Factor exponencial |
| kavl | 0.0 | no | Prefactor |
| kf | 0.0 | no | flicker noise coefficient (M^(1-AF)) |
| af | 2.0 | no | factor exponencial de ruido de centelleo |
| vgb | 1.2 | no | Bandgap-voltage (V) |
| vge | 1.17 | no | Effective emitter bandgap-voltage (V) |
| vgc | 1.17 | no | Effective collector bandgap-voltage (V) |
| vgs | 1.17 | no | Effective substrate bandgap-voltage (V) |
| f1vg | -1.02377e-4 | no | Coefficient K1 in T-dependent bandgap equation (V/K) |
| f2vg | 4.3215e-4 | no | Coefficient K2 in T-dependent bandgap equation (V/K) |
| alt0 | 0.0 | no | Frist-order TC of tf0 (1/K) |
| kt0 | 0.0 | no | Second-order TC of tf0 (1/K^2) |
| zetact | 3.0 | no | Coeficiente exponencial de transferencia de corriente en función de la temperatura |
| zetabet | 3.5 | no | Coeficiente exponencial en función de la temperatura en la corriente de la unión BE |
| zetaci | 0.0 | no | TC de difusividad epi-colector |
| alvs | 0.0 | no | Relative TC of satur.drift velocity (1/K) |
| alces | 0.0 | no | Relative TC of vces (1/K) |
| zetarbi | 0.0 | no | TC de la resistencia interna de base |
| zetarbx | 0.0 | no | TC de la resistencia externa de base |
| zetarcx | 0.0 | no | TC de la resistencia externa de colector |
| zetare | 0.0 | no | TC de resistencias de emisor |
| zetaiqf | 0.0 | no | TC of iqf (bandgap coefficient of zero bias hole charge) |
| alkav | 0.0 | no | TC of avalanche prefactor, identical to alfav of Hicum/L2 (1/K) |
| aleav | 0.0 | no | TC of avalanche exponential factor, identical to alqav of Hicum/L2 (1/K) |
| flsh | 0 | no | Marcador para el cálculo del autocalentamiento |
| rth | 0.0 | no | Thermal resistance (K/W) |
| zetarth | 0.0 | no | Exponent factor for temperature dependent thermal resistance |
| cth | 0.0 | no | Thermal capacitance (Ws/K) |
| tnom | 27 | no | Temperature for which parameters are valid (C) |
| dt | 0.0 | no | Temperature change for particular transistor (K) |
| delte | 0.0 | no | Emitter part coefficient of the zero bias hole charge temperature variation |
| deltc | 0.0 | no | Collector part coefficient of the zero bias hole charge temperature variation |
| zetaver | 0.0 | no | Bandgap TC parameter of ver |
| zetavef | 0.0 | no | Bandgap TC parameter of vef |
| ibhrec | 0.0 | no | Specific recombination current at the BC barrier for high forward injection (A) |
| Temp | 27 | no | simulación de temperatura |
Pnp Hicum L0 V1.2G¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | pnp HICUM L0 v1.2g |
Descripción |
HICUM Level 0 v1.2g verilog device |
| Schematic entry | hicumL0V1p2g |
| Netlist entry | T |
Tipo |
AnalogComponent |
| Bitmap file | pnpsub_therm |
Propiedades |
99 |
| Category | verilog-a devices |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
Tipo |
pnp | Sí |
polarity [npn, pnp] |
| is | 1.0e-16 | no | (Modified) saturation current (A) |
| mcf | 1.00 | no | Coeficiente no ideal de la corriente directa de colector |
| mcr | 1.00 | no | Coeficiente no ideal de la corriente inversa de colector |
| vef | 1.0e6 | no | forward Early voltage (normalization volt.) (V) |
| ver | 1.0e6 | no | reverse Early voltage (normalization volt.) (V) |
| iqf | 1.0e6 | no | forward d.c. high-injection roll-off current (A) |
| fiqf | 0 | no | flag for turning on base related critical current |
| iqr | 1.0e6 | no | inverse d.c. high-injection roll-off current (A) |
| iqfh | 1.0e6 | no | high-injection correction current (A) |
| iqfe | 0.0 | no | high-injection roll-off current |
| ahq | 0.0 | no | Smoothing factor for the d.c. injection width |
| ibes | 1e-18 | no | BE saturation current (A) |
| mbe | 1.0 | no | factor no ideal BE |
| ires | 0.0 | no | BE recombination saturation current (A) |
| mre | 2.0 | no | factor no ideal de recombinación BE |
| ibcs | 0.0 | no | BC saturation current (A) |
| mbc | 1.0 | no | factor no ideal BC |
| cje0 | 1.0e-20 | no | Zero-bias BE depletion capacitance (F) |
| vde | 0.9 | no | BE built-in voltage (V) |
| ze | 0.5 | no | factor exponencial BE |
| aje | 2.5 | no | Razón de máximo a valor de polarización cero |
| vdedc | 0.9 | no | BE charge built-in voltage for d.c. transfer current (V) |
| zedc | 0.5 | no | charge BE exponent factor for d.c. transfer current |
| ajedc | 2.5 | no | BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current |
| t0 | 0.0 | no | low current transit time at Vbici=0 (s) |
| dt0h | 0.0 | no | Base width modulation contribution (s) |
| tbvl | 0.0 | no | SCR width modulation contribution (s) |
| tef0 | 0.0 | no | Storage time in neutral emitter (s) |
| gte | 1.0 | no | Exponent factor for emitter transit time |
| thcs | 0.0 | no | Saturation time at high current densities (s) |
| ahc | 0.1 | no | Smoothing factor for current dependence |
| tr | 0.0 | no | Storage time at inverse operation (s) |
| rci0 | 150 | no | Low-field collector resistance under emitter (Ohm) |
| vlim | 0.5 | no | Voltage dividing ohmic and satur.region (V) |
| vpt | 100.0 | no | Punch-through voltage (V) |
| vces | 0.1 | no | Saturation voltage (V) |
| cjci0 | 1.0e-20 | no | Total zero-bias BC depletion capacitance (F) |
| vdci | 0.7 | no | BC built-in voltage (V) |
| zci | 0.333 | no | factor exponencial BC |
| vptci | 100.0 | no | Punch-through voltage of BC junction (V) |
| cjcx0 | 1.0e-20 | no | Zero-bias external BC depletion capacitance (F) |
| vdcx | 0.7 | no | External BC built-in voltage (V) |
| zcx | 0.333 | no | Factor exponencial externo de la unión BC |
| vptcx | 100.0 | no | Punch-through voltage (V) |
| fbc | 1.0 | no | Factor de separación = Cjci0/Cjc0 |
| rbi0 | 0.0 | no | Internal base resistance at zero-bias (Ohm) |
| vr0e | 2.5 | no | forward Early voltage (normalization volt.) (V) |
| vr0c | 1.0e6 | no | forward Early voltage (normalization volt.) (V) |
| fgeo | 0.656 | no | Factor de geometría |
| rbx | 0.0 | no | External base series resistance (Ohm) |
| rcx | 0.0 | no | Emitter series resistance (Ohm) |
| re | 0.0 | no | External collector series resistance (Ohm) |
| itss | 0.0 | no | Substrate transistor transfer saturation current (A) |
| msf | 1.0 | no | Factor no ideal de transferencia del sustrato de transistor |
| iscs | 0.0 | no | SC saturation current (A) |
| msc | 1.0 | no | Factor no ideal SC |
| cjs0 | 1.0e-20 | no | Zero-bias SC depletion capacitance (F) |
| vds | 0.3 | no | SC built-in voltage (V) |
| zs | 0.3 | no | Factor exponencial externo de la unión SC |
| vpts | 100.0 | no | SC punch-through voltage (V) |
| cbcpar | 0.0 | no | Collector-base isolation (overlap) capacitance (F) |
| cbepar | 0.0 | no | Emitter-base oxide capacitance (F) |
| eavl | 0.0 | no | Factor exponencial |
| kavl | 0.0 | no | Prefactor |
| kf | 0.0 | no | flicker noise coefficient (M^(1-AF)) |
| af | 2.0 | no | factor exponencial de ruido de centelleo |
| vgb | 1.2 | no | Bandgap-voltage (V) |
| vge | 1.17 | no | Effective emitter bandgap-voltage (V) |
| vgc | 1.17 | no | Effective collector bandgap-voltage (V) |
| vgs | 1.17 | no | Effective substrate bandgap-voltage (V) |
| f1vg | -1.02377e-4 | no | Coefficient K1 in T-dependent bandgap equation (V/K) |
| f2vg | 4.3215e-4 | no | Coefficient K2 in T-dependent bandgap equation (V/K) |
| alt0 | 0.0 | no | Frist-order TC of tf0 (1/K) |
| kt0 | 0.0 | no | Second-order TC of tf0 (1/K^2) |
| zetact | 3.0 | no | Coeficiente exponencial de transferencia de corriente en función de la temperatura |
| zetabet | 3.5 | no | Coeficiente exponencial en función de la temperatura en la corriente de la unión BE |
| zetaci | 0.0 | no | TC de difusividad epi-colector |
| alvs | 0.0 | no | Relative TC of satur.drift velocity (1/K) |
| alces | 0.0 | no | Relative TC of vces (1/K) |
| zetarbi | 0.0 | no | TC de la resistencia interna de base |
| zetarbx | 0.0 | no | TC de la resistencia externa de base |
| zetarcx | 0.0 | no | TC de la resistencia externa de colector |
| zetare | 0.0 | no | TC de resistencias de emisor |
| zetaiqf | 0.0 | no | TC of iqf (bandgap coefficient of zero bias hole charge) |
| alkav | 0.0 | no | TC of avalanche prefactor, identical to alfav of Hicum/L2 (1/K) |
| aleav | 0.0 | no | TC of avalanche exponential factor, identical to alqav of Hicum/L2 (1/K) |
| flsh | 0 | no | Marcador para el cálculo del autocalentamiento |
| rth | 0.0 | no | Thermal resistance (K/W) |
| zetarth | 0.0 | no | Exponent factor for temperature dependent thermal resistance |
| cth | 0.0 | no | Thermal capacitance (Ws/K) |
| tnom | 27 | no | Temperature for which parameters are valid (C) |
| dt | 0.0 | no | Temperature change for particular transistor (K) |
| delte | 0.0 | no | Emitter part coefficient of the zero bias hole charge temperature variation |
| deltc | 0.0 | no | Collector part coefficient of the zero bias hole charge temperature variation |
| zetaver | 0.0 | no | Bandgap TC parameter of ver |
| zetavef | 0.0 | no | Bandgap TC parameter of vef |
| ibhrec | 0.0 | no | Specific recombination current at the BC barrier for high forward injection (A) |
| Temp | 27 | no | simulación de temperatura |
Npn Hicum L0 V1.3¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | npn HICUM L0 v1.3 |
Descripción |
HICUM Level 0 v1.3 verilog device |
| Schematic entry | hicumL0V1p3 |
| Netlist entry | T |
Tipo |
AnalogComponent |
| Bitmap file | pnpsub_therm |
Propiedades |
102 |
| Category | verilog-a devices |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
Tipo |
npn | Sí |
polarity [npn, pnp] |
| is | 1.0e-16 | no | (Modified) saturation current (A) |
| it_mod | 0 | no | Flag for using third order solution for transfer current |
| mcf | 1.00 | no | Coeficiente no ideal de la corriente directa de colector |
| mcr | 1.00 | no | Coeficiente no ideal de la corriente inversa de colector |
| vef | 1.0e6 | no | forward Early voltage (normalization volt.) (V) |
| ver | 1.0e6 | no | reverse Early voltage (normalization volt.) (V) |
| aver | 0.0 | no | bias dependence for reverse Early voltage |
| iqf | 1.0e6 | no | forward d.c. high-injection roll-off current (A) |
| fiqf | 0 | no | flag for turning on base related critical current |
| iqr | 1.0e6 | no | inverse d.c. high-injection roll-off current (A) |
| iqfh | 1.0e6 | no | high-injection correction current (A) |
| tfh | 0.0 | no | factor de corrección de alta inyección |
| ahq | 0 | no | Smoothing factor for the d.c. injection width |
| ibes | 1e-18 | no | BE saturation current (A) |
| mbe | 1.0 | no | factor no ideal BE |
| ires | 0.0 | no | BE recombination saturation current (A) |
| mre | 2.0 | no | factor no ideal de recombinación BE |
| ibcs | 0.0 | no | BC saturation current (A) |
| mbc | 1.0 | no | factor no ideal BC |
| cje0 | 1.0e-20 | no | Zero-bias BE depletion capacitance (F) |
| vde | 0.9 | no | BE built-in voltage (V) |
| ze | 0.5 | no | factor exponencial BE |
| aje | 2.5 | no | Razón de máximo a valor de polarización cero |
| vdedc | 0.9 | no | BE charge built-in voltage for d.c. transfer current (V) |
| zedc | 0.5 | no | charge BE exponent factor for d.c. transfer current |
| ajedc | 2.5 | no | BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current |
| t0 | 0.0 | no | low current transit time at Vbici=0 (s) |
| dt0h | 0.0 | no | Base width modulation contribution (s) |
| tbvl | 0.0 | no | SCR width modulation contribution (s) |
| tef0 | 0.0 | no | Storage time in neutral emitter (s) |
| gte | 1.0 | no | Exponent factor for emitter transit time |
| thcs | 0.0 | no | Saturation time at high current densities (s) |
| ahc | 0.1 | no | Smoothing factor for current dependence |
| tr | 0.0 | no | Storage time at inverse operation (s) |
| rci0 | 150 | no | Low-field collector resistance under emitter (Ohm) |
| vlim | 0.5 | no | Voltage dividing ohmic and satur.region (V) |
| vpt | 100 | no | Punch-through voltage (V) |
| vces | 0.1 | no | Saturation voltage (V) |
| cjci0 | 1.0e-20 | no | Total zero-bias BC depletion capacitance (F) |
| vdci | 0.7 | no | BC built-in voltage (V) |
| zci | 0.333 | no | factor exponencial BC |
| vptci | 100 | no | Punch-through voltage of BC junction (V) |
| cjcx0 | 1.0e-20 | no | Zero-bias external BC depletion capacitance (F) |
| vdcx | 0.7 | no | External BC built-in voltage (V) |
| zcx | 0.333 | no | Factor exponencial externo de la unión BC |
| vptcx | 100 | no | Punch-through voltage (V) |
| fbc | 1.0 | no | Factor de separación = Cjci0/Cjc0 |
| rbi0 | 0.0 | no | Internal base resistance at zero-bias (Ohm) |
| vr0e | 2.5 | no | forward Early voltage (normalization volt.) (V) |
| vr0c | 1.0e6 | no | forward Early voltage (normalization volt.) (V) |
| fgeo | 0.656 | no | Factor de geometría |
| rbx | 0.0 | no | External base series resistance (Ohm) |
| rcx | 0.0 | no | Emitter series resistance (Ohm) |
| re | 0.0 | no | External collector series resistance (Ohm) |
| itss | 0.0 | no | Substrate transistor transfer saturation current (A) |
| msf | 1.0 | no | Factor no ideal de transferencia del sustrato de transistor |
| iscs | 0.0 | no | SC saturation current (A) |
| msc | 1.0 | no | Factor no ideal SC |
| cjs0 | 1.0e-20 | no | Zero-bias SC depletion capacitance (F) |
| vds | 0.3 | no | SC built-in voltage (V) |
| zs | 0.3 | no | Factor exponencial externo de la unión SC |
| vpts | 100 | no | SC punch-through voltage (V) |
| cbcpar | 0.0 | no | Collector-base isolation (overlap) capacitance (F) |
| cbepar | 0.0 | no | Emitter-base oxide capacitance (F) |
| eavl | 0.0 | no | Factor exponencial |
| kavl | 0.0 | no | Prefactor |
| kf | 0.0 | no | flicker noise coefficient (M^(1-AF)) |
| af | 2.0 | no | factor exponencial de ruido de centelleo |
| vgb | 1.2 | no | Bandgap-voltage (V) |
| vge | 1.17 | no | Effective emitter bandgap-voltage (V) |
| vgc | 1.17 | no | Effective collector bandgap-voltage (V) |
| vgs | 1.17 | no | Effective substrate bandgap-voltage (V) |
| f1vg | -1.02377e-4 | no | Coefficient K1 in T-dependent bandgap equation (V/K) |
| f2vg | 4.3215e-4 | no | Coefficient K2 in T-dependent bandgap equation (V/K) |
| alt0 | 0.0 | no | Frist-order TC of tf0 (1/K) |
| kt0 | 0.0 | no | Second-order TC of tf0 (1/K^2) |
| zetact | 3.0 | no | Coeficiente exponencial de transferencia de corriente en función de la temperatura |
| zetabet | 3.5 | no | Coeficiente exponencial en función de la temperatura en la corriente de la unión BE |
| zetaci | 0.0 | no | TC de difusividad epi-colector |
| alvs | 0.0 | no | Relative TC of satur.drift velocity (1/K) |
| alces | 0.0 | no | Relative TC of vces (1/K) |
| zetarbi | 0.0 | no | TC de la resistencia interna de base |
| zetarbx | 0.0 | no | TC de la resistencia externa de base |
| zetarcx | 0.0 | no | TC de la resistencia externa de colector |
| zetare | 0.0 | no | TC de resistencias de emisor |
| zetaiqf | 0.0 | no | TC of iqf |
| alkav | 0.0 | no | TC of avalanche prefactor (1/K) |
| aleav | 0.0 | no | TC of avalanche exponential factor (1/K) |
| zetarth | 0.0 | no | Exponent factor for temperature dependent thermal resistance |
| tef_temp | 1 | no | Flag for turning temperature dependence of tef0 on and off |
| zetaver | -1.0 | no | TC of Reverse Early voltage |
| zetavgbe | 1.0 | no | TC of AVER |
| dvgbe | 0.0 | no | Bandgap difference between base and BE-junction |
| aliqfh | 0 | no | Frist-order TC of iqfh (1/K) |
| kiqfh | 0 | no | Second-order TC of iqfh (1/K^2) |
| flsh | 0 | no | Marcador para el cálculo del autocalentamiento |
| rth | 0.0 | no | Thermal resistance (K/W) |
| cth | 0.0 | no | Thermal capacitance (Ws/K) |
| tnom | 27 | no | Temperature for which parameters are valid (C) |
| dt | 0.0 | no | Temperature change for particular transistor (K) |
| Temp | 27 | no | simulación de temperatura |
Pnp Hicum L0 V1.3¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | pnp HICUM L0 v1.3 |
Descripción |
HICUM Level 0 v1.3 verilog device |
| Schematic entry | hicumL0V1p3 |
| Netlist entry | T |
Tipo |
AnalogComponent |
| Bitmap file | pnpsub_therm |
Propiedades |
102 |
| Category | verilog-a devices |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
Tipo |
pnp | Sí |
polarity [npn, pnp] |
| is | 1.0e-16 | no | (Modified) saturation current (A) |
| it_mod | 0 | no | Flag for using third order solution for transfer current |
| mcf | 1.00 | no | Coeficiente no ideal de la corriente directa de colector |
| mcr | 1.00 | no | Coeficiente no ideal de la corriente inversa de colector |
| vef | 1.0e6 | no | forward Early voltage (normalization volt.) (V) |
| ver | 1.0e6 | no | reverse Early voltage (normalization volt.) (V) |
| aver | 0.0 | no | bias dependence for reverse Early voltage |
| iqf | 1.0e6 | no | forward d.c. high-injection roll-off current (A) |
| fiqf | 0 | no | flag for turning on base related critical current |
| iqr | 1.0e6 | no | inverse d.c. high-injection roll-off current (A) |
| iqfh | 1.0e6 | no | high-injection correction current (A) |
| tfh | 0.0 | no | factor de corrección de alta inyección |
| ahq | 0 | no | Smoothing factor for the d.c. injection width |
| ibes | 1e-18 | no | BE saturation current (A) |
| mbe | 1.0 | no | factor no ideal BE |
| ires | 0.0 | no | BE recombination saturation current (A) |
| mre | 2.0 | no | factor no ideal de recombinación BE |
| ibcs | 0.0 | no | BC saturation current (A) |
| mbc | 1.0 | no | factor no ideal BC |
| cje0 | 1.0e-20 | no | Zero-bias BE depletion capacitance (F) |
| vde | 0.9 | no | BE built-in voltage (V) |
| ze | 0.5 | no | factor exponencial BE |
| aje | 2.5 | no | Razón de máximo a valor de polarización cero |
| vdedc | 0.9 | no | BE charge built-in voltage for d.c. transfer current (V) |
| zedc | 0.5 | no | charge BE exponent factor for d.c. transfer current |
| ajedc | 2.5 | no | BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current |
| t0 | 0.0 | no | low current transit time at Vbici=0 (s) |
| dt0h | 0.0 | no | Base width modulation contribution (s) |
| tbvl | 0.0 | no | SCR width modulation contribution (s) |
| tef0 | 0.0 | no | Storage time in neutral emitter (s) |
| gte | 1.0 | no | Exponent factor for emitter transit time |
| thcs | 0.0 | no | Saturation time at high current densities (s) |
| ahc | 0.1 | no | Smoothing factor for current dependence |
| tr | 0.0 | no | Storage time at inverse operation (s) |
| rci0 | 150 | no | Low-field collector resistance under emitter (Ohm) |
| vlim | 0.5 | no | Voltage dividing ohmic and satur.region (V) |
| vpt | 100 | no | Punch-through voltage (V) |
| vces | 0.1 | no | Saturation voltage (V) |
| cjci0 | 1.0e-20 | no | Total zero-bias BC depletion capacitance (F) |
| vdci | 0.7 | no | BC built-in voltage (V) |
| zci | 0.333 | no | factor exponencial BC |
| vptci | 100 | no | Punch-through voltage of BC junction (V) |
| cjcx0 | 1.0e-20 | no | Zero-bias external BC depletion capacitance (F) |
| vdcx | 0.7 | no | External BC built-in voltage (V) |
| zcx | 0.333 | no | Factor exponencial externo de la unión BC |
| vptcx | 100 | no | Punch-through voltage (V) |
| fbc | 1.0 | no | Factor de separación = Cjci0/Cjc0 |
| rbi0 | 0.0 | no | Internal base resistance at zero-bias (Ohm) |
| vr0e | 2.5 | no | forward Early voltage (normalization volt.) (V) |
| vr0c | 1.0e6 | no | forward Early voltage (normalization volt.) (V) |
| fgeo | 0.656 | no | Factor de geometría |
| rbx | 0.0 | no | External base series resistance (Ohm) |
| rcx | 0.0 | no | Emitter series resistance (Ohm) |
| re | 0.0 | no | External collector series resistance (Ohm) |
| itss | 0.0 | no | Substrate transistor transfer saturation current (A) |
| msf | 1.0 | no | Factor no ideal de transferencia del sustrato de transistor |
| iscs | 0.0 | no | SC saturation current (A) |
| msc | 1.0 | no | Factor no ideal SC |
| cjs0 | 1.0e-20 | no | Zero-bias SC depletion capacitance (F) |
| vds | 0.3 | no | SC built-in voltage (V) |
| zs | 0.3 | no | Factor exponencial externo de la unión SC |
| vpts | 100 | no | SC punch-through voltage (V) |
| cbcpar | 0.0 | no | Collector-base isolation (overlap) capacitance (F) |
| cbepar | 0.0 | no | Emitter-base oxide capacitance (F) |
| eavl | 0.0 | no | Factor exponencial |
| kavl | 0.0 | no | Prefactor |
| kf | 0.0 | no | flicker noise coefficient (M^(1-AF)) |
| af | 2.0 | no | factor exponencial de ruido de centelleo |
| vgb | 1.2 | no | Bandgap-voltage (V) |
| vge | 1.17 | no | Effective emitter bandgap-voltage (V) |
| vgc | 1.17 | no | Effective collector bandgap-voltage (V) |
| vgs | 1.17 | no | Effective substrate bandgap-voltage (V) |
| f1vg | -1.02377e-4 | no | Coefficient K1 in T-dependent bandgap equation (V/K) |
| f2vg | 4.3215e-4 | no | Coefficient K2 in T-dependent bandgap equation (V/K) |
| alt0 | 0.0 | no | Frist-order TC of tf0 (1/K) |
| kt0 | 0.0 | no | Second-order TC of tf0 (1/K^2) |
| zetact | 3.0 | no | Coeficiente exponencial de transferencia de corriente en función de la temperatura |
| zetabet | 3.5 | no | Coeficiente exponencial en función de la temperatura en la corriente de la unión BE |
| zetaci | 0.0 | no | TC de difusividad epi-colector |
| alvs | 0.0 | no | Relative TC of satur.drift velocity (1/K) |
| alces | 0.0 | no | Relative TC of vces (1/K) |
| zetarbi | 0.0 | no | TC de la resistencia interna de base |
| zetarbx | 0.0 | no | TC de la resistencia externa de base |
| zetarcx | 0.0 | no | TC de la resistencia externa de colector |
| zetare | 0.0 | no | TC de resistencias de emisor |
| zetaiqf | 0.0 | no | TC of iqf |
| alkav | 0.0 | no | TC of avalanche prefactor (1/K) |
| aleav | 0.0 | no | TC of avalanche exponential factor (1/K) |
| zetarth | 0.0 | no | Exponent factor for temperature dependent thermal resistance |
| tef_temp | 1 | no | Flag for turning temperature dependence of tef0 on and off |
| zetaver | -1.0 | no | TC of Reverse Early voltage |
| zetavgbe | 1.0 | no | TC of AVER |
| dvgbe | 0.0 | no | Bandgap difference between base and BE-junction |
| aliqfh | 0 | no | Frist-order TC of iqfh (1/K) |
| kiqfh | 0 | no | Second-order TC of iqfh (1/K^2) |
| flsh | 0 | no | Marcador para el cálculo del autocalentamiento |
| rth | 0.0 | no | Thermal resistance (K/W) |
| cth | 0.0 | no | Thermal capacitance (Ws/K) |
| tnom | 27 | no | Temperature for which parameters are valid (C) |
| dt | 0.0 | no | Temperature change for particular transistor (K) |
| Temp | 27 | no | simulación de temperatura |
Hicum L2 V2.23¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | HICUM L2 v2.23 |
Descripción |
HICUM Level 2 v2.23 verilog device |
| Schematic entry | hicumL2V2p23 |
| Netlist entry | T |
Tipo |
AnalogComponent |
| Bitmap file | npnsub_therm |
Propiedades |
114 |
| Category | verilog-a devices |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| c10 | 2.0E-30 | no | GICCR constant (A^2s) |
| qp0 | 2.0E-14 | no | Zero-bias hole charge (Coul) |
| ich | 0.0 | no | High-current correction for 2D and 3D effects (A) |
| hfe | 1.0 | no | Factor de ponderación de carga del emisor minoritario en HTBs |
| hfc | 1.0 | no | Factor de ponderación de carga del colector minoritario en HBTs |
| hjei | 1.0 | no | Factor de ponderación de carga de la unión B-E en HBTs |
| hjci | 1.0 | no | Factor de ponderación de carga de la unión B-C en HBTs |
| ibeis | 1.0E-18 | no | Internal B-E saturation current (A) |
| mbei | 1.0 | no | Factor ideal de corriente interna B-E |
| ireis | 0.0 | no | Internal B-E recombination saturation current (A) |
| mrei | 2.0 | no | Factor ideal de corriente de recombinación interna B-E |
| ibeps | 0.0 | no | Peripheral B-E saturation current (A) |
| mbep | 1.0 | no | Factor ideal de corriente periférica B-E |
| ireps | 0.0 | no | Peripheral B-E recombination saturation current (A) |
| mrep | 2.0 | no | Factor ideal de corriente de recombinación periférica B-E |
| mcf | 1.0 | no | Factor no ideal para III-V HBTs |
| tbhrec | 0.0 | no | Base current recombination time constant at B-C barrier for high forward injection (s) |
| ibcis | 1.0E-16 | no | Internal B-C saturation current (A) |
| mbci | 1.0 | no | Factor ideal de corriente interna B-C |
| ibcxs | 0.0 | no | External B-C saturation current (A) |
| mbcx | 1.0 | no | Factor ideal de corriente externa B-C |
| ibets | 0.0 | no | B-E tunneling saturation current (A) |
| abet | 40 | no | Factor exponencial para la corriente de túnel |
| tunode | 1 | no | Especifica el nodo de conexión de base para la corriente de efecto túnel |
| favl | 0.0 | no | Avalanche current factor (1/V) |
| qavl | 0.0 | no | Exponent factor for avalanche current (Coul) |
| alfav | 0.0 | no | Relative TC for FAVL (1/K) |
| alqav | 0.0 | no | Relative TC for QAVL (1/K) |
| rbi0 | 0.0 | no | Zero bias internal base resistance (Ohm) |
| rbx | 0.0 | no | External base series resistance (Ohm) |
| fgeo | 0.6557 | no | Factor para la dependencia geométrica de la corriente de avalancha del emisor |
| fdqr0 | 0.0 | no | Factor de corrección de la modulación por B-E y B-C de la capa de carga espacial |
| fcrbi | 0.0 | no | Porcentaje de desviación HF a la capacidad interna total (efecto lateral NQS) |
| fqi | 1.0 | no | Porcentaje de la carga interna a minoria total |
| re | 0.0 | no | Emitter series resistance (Ohm) |
| rcx | 0.0 | no | External collector series resistance (Ohm) |
| itss | 0.0 | no | Substrate transistor transfer saturation current (A) |
| msf | 1.0 | no | Factor ideal directo de la corriente de transferencia del sustrato |
| iscs | 0.0 | no | C-S diode saturation current (A) |
| msc | 1.0 | no | Factor ideal de la corriente del diodo C-S |
| tsf | 0.0 | no | Transit time for forward operation of substrate transistor (s) |
| rsu | 0.0 | no | Substrate series resistance (Ohm) |
| csu | 0.0 | no | Substrate shunt capacitance (F) |
| cjei0 | 1.0E-20 | no | Internal B-E zero-bias depletion capacitance (F) |
| vdei | 0.9 | no | Internal B-E built-in potential (V) |
| zei | 0.5 | no | Coeficiente de graduación interna B-E |
| ajei | 2.5 | no | Porcentaje del valor máximo de polarización de la capacidad B-E interna |
| cjep0 | 1.0E-20 | no | Peripheral B-E zero-bias depletion capacitance (F) |
| vdep | 0.9 | no | Peripheral B-E built-in potential (V) |
| zep | 0.5 | no | Coeficiente del gradiente periférico B-E |
| ajep | 2.5 | no | Porcentaje del valor máximo de polarización de la capacidad B-E periférica |
| cjci0 | 1.0E-20 | no | Internal B-C zero-bias depletion capacitance (F) |
| vdci | 0.7 | no | Internal B-C built-in potential (V) |
| zci | 0.4 | no | Coeficiente de graduación interna B-C |
| vptci | 100 | no | Internal B-C punch-through voltage (V) |
| cjcx0 | 1.0E-20 | no | External B-C zero-bias depletion capacitance (F) |
| vdcx | 0.7 | no | External B-C built-in potential (V) |
| zcx | 0.4 | no | Coeficiente de graduación externa B-C |
| vptcx | 100 | no | External B-C punch-through voltage (V) |
| fbcpar | 0.0 | no | Factor de particionado de la capacidad parásita en la unión B-C |
| fbepar | 1.0 | no | Factor de particionado de la capacidad parásita en la unión B-E |
| cjs0 | 0.0 | no | C-S zero-bias depletion capacitance (F) |
| vds | 0.6 | no | C-S built-in potential (V) |
| zs | 0.5 | no | Coeficiente de graduación C-S |
| vpts | 100 | no | C-S punch-through voltage (V) |
| t0 | 0.0 | no | Low current forward transit time at VBC=0V (s) |
| dt0h | 0.0 | no | Time constant for base and B-C space charge layer width modulation (s) |
| tbvl | 0.0 | no | Time constant for modelling carrier jam at low VCE (s) |
| tef0 | 0.0 | no | Neutral emitter storage time (s) |
| gtfe | 1.0 | no | Factor exponencial para la dependencia de corriente del tiempo de almacenamiento de emisor neutro |
| thcs | 0.0 | no | Saturation time constant at high current densities (s) |
| ahc | 0.1 | no | Factor de suavizado para la dependencia de corriente del tiempo de transición de base y colector |
| fthc | 0.0 | no | Factor de particionado para la porción de la base y el colector |
| rci0 | 150 | no | Internal collector resistance at low electric field (Ohm) |
| vlim | 0.5 | no | Voltage separating ohmic and saturation velocity regime (V) |
| vces | 0.1 | no | Internal C-E saturation voltage (V) |
| vpt | 0.0 | no | Collector punch-through voltage (V) |
| tr | 0.0 | no | Storage time for inverse operation (s) |
| cbepar | 0.0 | no | Total parasitic B-E capacitance (F) |
| cbcpar | 0.0 | no | Total parasitic B-C capacitance (F) |
| alqf | 0.0 | no | Factor para el tiempo de retardo adicional de aminoración de carga |
| alit | 0.0 | no | Factor para el tiempo de retardo adicional de corriente de transferencia |
| flnqs | 0 | no | Marca de inflexión ON/OFF de efecto vertical NQS |
| kf | 0.0 | no | Coeficiente de ruido parpadeante |
| af | 2.0 | no | Factor exponencial de ruido parpadeante |
| cfbe | -1 | no | Marca para determinar la etiqueta de la fuente de ruido de parpadeo |
| latb | 0.0 | no | Factor de escala para la carga de aminoración del colector en la dirección del ancho del emisor |
| latl | 0.0 | no | Factor de escala para la carga de aminoración del colector en la dirección del largo del emisor |
| vgb | 1.17 | no | Bandgap voltage extrapolated to 0 K (V) |
| alt0 | 0.0 | no | First order relative TC of parameter T0 (1/K) |
| kt0 | 0.0 | no | TC relativo de segundo orden del parámetro T0 |
| zetaci | 0.0 | no | Exponente de temperatura para RCI0 |
| alvs | 0.0 | no | Relative TC of saturation drift velocity (1/K) |
| alces | 0.0 | no | Relative TC of VCES (1/K) |
| zetarbi | 0.0 | no | Exponente de temperatura de la resistencia de base interna |
| zetarbx | 0.0 | no | Exponente de temperatura de la resistencia de base externa |
| zetarcx | 0.0 | no | Exponente de temparatura de la resistencia de colector externa |
| zetare | 0.0 | no | Exponente de temperatura de la resistencia del emisor |
| zetacx | 1.0 | no | Exponente de mobilidad de la temperatura en el tiempo de transición del sustrato del transistor |
| vge | 1.17 | no | Effective emitter bandgap voltage (V) |
| vgc | 1.17 | no | Effective collector bandgap voltage (V) |
| vgs | 1.17 | no | Effective substrate bandgap voltage (V) |
| f1vg | -1.02377e-4 | no | Ecuación de salto de banda del coeficiente K1 en función de T |
| f2vg | 4.3215e-4 | no | Ecuación de salto de banda del coeficiente K2 en función de T |
| zetact | 3.0 | no | Coeficiente exponencial de transferencia de corriente en función de la temperatura |
| zetabet | 3.5 | no | Coeficiente exponencial de corriente en la unióm B-E en función de la temperatura |
| alb | 0.0 | no | Relative TC of forward current gain for V2.1 model (1/K) |
| flsh | 0 | no | Marca de inflexión ON/OFF del efecto de auto-calentamiento |
| rth | 0.0 | no | Thermal resistance (K/W) |
| cth | 0.0 | no | Thermal capacitance (J/W) |
| flcomp | 0.0 | no | Marca par la compatibilidad con el modelo v2.1 (0=v2.1) |
| tnom | 27.0 | no | Temperature at which parameters are specified (C) |
| dt | 0.0 | no | Temperature change w.r.t. chip temperature for particular transistor (K) |
| Temp | 27 | no | simulación de temperatura |
Hicum L2 V2.24¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | HICUM L2 v2.24 |
Descripción |
HICUM Level 2 v2.24 verilog device |
| Schematic entry | hicumL2V2p24 |
| Netlist entry | T |
Tipo |
AnalogComponent |
| Bitmap file | npnsub_therm |
Propiedades |
114 |
| Category | verilog-a devices |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| c10 | 2.0E-30 | no | GICCR constant (A^2s) |
| qp0 | 2.0E-14 | no | Zero-bias hole charge (Coul) |
| ich | 0.0 | no | High-current correction for 2D and 3D effects (A) |
| hfe | 1.0 | no | Factor de ponderación de carga del emisor minoritario en HTBs |
| hfc | 1.0 | no | Factor de ponderación de carga del colector minoritario en HBTs |
| hjei | 1.0 | no | Factor de ponderación de carga de la unión B-E en HBTs |
| hjci | 1.0 | no | Factor de ponderación de carga de la unión B-C en HBTs |
| ibeis | 1.0E-18 | no | Internal B-E saturation current (A) |
| mbei | 1.0 | no | Factor ideal de corriente interna B-E |
| ireis | 0.0 | no | Internal B-E recombination saturation current (A) |
| mrei | 2.0 | no | Factor ideal de corriente de recombinación interna B-E |
| ibeps | 0.0 | no | Peripheral B-E saturation current (A) |
| mbep | 1.0 | no | Factor ideal de corriente periférica B-E |
| ireps | 0.0 | no | Peripheral B-E recombination saturation current (A) |
| mrep | 2.0 | no | Factor ideal de corriente de recombinación periférica B-E |
| mcf | 1.0 | no | Factor no ideal para III-V HBTs |
| tbhrec | 0.0 | no | Base current recombination time constant at B-C barrier for high forward injection (s) |
| ibcis | 1.0E-16 | no | Internal B-C saturation current (A) |
| mbci | 1.0 | no | Factor ideal de corriente interna B-C |
| ibcxs | 0.0 | no | External B-C saturation current (A) |
| mbcx | 1.0 | no | Factor ideal de corriente externa B-C |
| ibets | 0.0 | no | B-E tunneling saturation current (A) |
| abet | 40 | no | Factor exponencial para la corriente de túnel |
| tunode | 1 | no | Especifica el nodo de conexión de base para la corriente de efecto túnel |
| favl | 0.0 | no | Avalanche current factor (1/V) |
| qavl | 0.0 | no | Exponent factor for avalanche current (Coul) |
| alfav | 0.0 | no | Relative TC for FAVL (1/K) |
| alqav | 0.0 | no | Relative TC for QAVL (1/K) |
| rbi0 | 0.0 | no | Zero bias internal base resistance (Ohm) |
| rbx | 0.0 | no | External base series resistance (Ohm) |
| fgeo | 0.6557 | no | Factor para la dependencia geométrica de la corriente de avalancha del emisor |
| fdqr0 | 0.0 | no | Factor de corrección de la modulación por B-E y B-C de la capa de carga espacial |
| fcrbi | 0.0 | no | Porcentaje de desviación HF a la capacidad interna total (efecto lateral NQS) |
| fqi | 1.0 | no | Porcentaje de la carga interna a minoria total |
| re | 0.0 | no | Emitter series resistance (Ohm) |
| rcx | 0.0 | no | External collector series resistance (Ohm) |
| itss | 0.0 | no | Substrate transistor transfer saturation current (A) |
| msf | 1.0 | no | Factor ideal directo de la corriente de transferencia del sustrato |
| iscs | 0.0 | no | C-S diode saturation current (A) |
| msc | 1.0 | no | Factor ideal de la corriente del diodo C-S |
| tsf | 0.0 | no | Transit time for forward operation of substrate transistor (s) |
| rsu | 0.0 | no | Substrate series resistance (Ohm) |
| csu | 0.0 | no | Substrate shunt capacitance (F) |
| cjei0 | 1.0E-20 | no | Internal B-E zero-bias depletion capacitance (F) |
| vdei | 0.9 | no | Internal B-E built-in potential (V) |
| zei | 0.5 | no | Coeficiente de graduación interna B-E |
| ajei | 2.5 | no | Porcentaje del valor máximo de polarización de la capacidad B-E interna |
| cjep0 | 1.0E-20 | no | Peripheral B-E zero-bias depletion capacitance (F) |
| vdep | 0.9 | no | Peripheral B-E built-in potential (V) |
| zep | 0.5 | no | Coeficiente del gradiente periférico B-E |
| ajep | 2.5 | no | Porcentaje del valor máximo de polarización de la capacidad B-E periférica |
| cjci0 | 1.0E-20 | no | Internal B-C zero-bias depletion capacitance (F) |
| vdci | 0.7 | no | Internal B-C built-in potential (V) |
| zci | 0.4 | no | Coeficiente de graduación interna B-C |
| vptci | 100 | no | Internal B-C punch-through voltage (V) |
| cjcx0 | 1.0E-20 | no | External B-C zero-bias depletion capacitance (F) |
| vdcx | 0.7 | no | External B-C built-in potential (V) |
| zcx | 0.4 | no | Coeficiente de graduación externa B-C |
| vptcx | 100 | no | External B-C punch-through voltage (V) |
| fbcpar | 0.0 | no | Factor de particionado de la capacidad parásita en la unión B-C |
| fbepar | 1.0 | no | Factor de particionado de la capacidad parásita en la unión B-E |
| cjs0 | 0.0 | no | C-S zero-bias depletion capacitance (F) |
| vds | 0.6 | no | C-S built-in potential (V) |
| zs | 0.5 | no | Coeficiente de graduación C-S |
| vpts | 100 | no | C-S punch-through voltage (V) |
| t0 | 0.0 | no | Low current forward transit time at VBC=0V (s) |
| dt0h | 0.0 | no | Time constant for base and B-C space charge layer width modulation (s) |
| tbvl | 0.0 | no | Time constant for modelling carrier jam at low VCE (s) |
| tef0 | 0.0 | no | Neutral emitter storage time (s) |
| gtfe | 1.0 | no | Factor exponencial para la dependencia de corriente del tiempo de almacenamiento de emisor neutro |
| thcs | 0.0 | no | Saturation time constant at high current densities (s) |
| ahc | 0.1 | no | Factor de suavizado para la dependencia de corriente del tiempo de transición de base y colector |
| fthc | 0.0 | no | Factor de particionado para la porción de la base y el colector |
| rci0 | 150 | no | Internal collector resistance at low electric field (Ohm) |
| vlim | 0.5 | no | Voltage separating ohmic and saturation velocity regime (V) |
| vces | 0.1 | no | Internal C-E saturation voltage (V) |
| vpt | 100.0 | no | Collector punch-through voltage (V) |
| tr | 0.0 | no | Storage time for inverse operation (s) |
| cbepar | 0.0 | no | Total parasitic B-E capacitance (F) |
| cbcpar | 0.0 | no | Total parasitic B-C capacitance (F) |
| alqf | 0.0 | no | Factor para el tiempo de retardo adicional de aminoración de carga |
| alit | 0.0 | no | Factor para el tiempo de retardo adicional de corriente de transferencia |
| flnqs | 0 | no | Marca de inflexión ON/OFF de efecto vertical NQS |
| kf | 0.0 | no | Coeficiente de ruido parpadeante |
| af | 2.0 | no | Factor exponencial de ruido parpadeante |
| cfbe | -1 | no | Marca para determinar la etiqueta de la fuente de ruido de parpadeo |
| latb | 0.0 | no | Factor de escala para la carga de aminoración del colector en la dirección del ancho del emisor |
| latl | 0.0 | no | Factor de escala para la carga de aminoración del colector en la dirección del largo del emisor |
| vgb | 1.17 | no | Bandgap voltage extrapolated to 0 K (V) |
| alt0 | 0.0 | no | First order relative TC of parameter T0 (1/K) |
| kt0 | 0.0 | no | TC relativo de segundo orden del parámetro T0 |
| zetaci | 0.0 | no | Exponente de temperatura para RCI0 |
| alvs | 0.0 | no | Relative TC of saturation drift velocity (1/K) |
| alces | 0.0 | no | Relative TC of VCES (1/K) |
| zetarbi | 0.0 | no | Exponente de temperatura de la resistencia de base interna |
| zetarbx | 0.0 | no | Exponente de temperatura de la resistencia de base externa |
| zetarcx | 0.0 | no | Exponente de temparatura de la resistencia de colector externa |
| zetare | 0.0 | no | Exponente de temperatura de la resistencia del emisor |
| zetacx | 1.0 | no | Exponente de mobilidad de la temperatura en el tiempo de transición del sustrato del transistor |
| vge | 1.17 | no | Effective emitter bandgap voltage (V) |
| vgc | 1.17 | no | Effective collector bandgap voltage (V) |
| vgs | 1.17 | no | Effective substrate bandgap voltage (V) |
| f1vg | -1.02377e-4 | no | Ecuación de salto de banda del coeficiente K1 en función de T |
| f2vg | 4.3215e-4 | no | Ecuación de salto de banda del coeficiente K2 en función de T |
| zetact | 3.0 | no | Coeficiente exponencial de transferencia de corriente en función de la temperatura |
| zetabet | 3.5 | no | Coeficiente exponencial de corriente en la unióm B-E en función de la temperatura |
| alb | 0.0 | no | Relative TC of forward current gain for V2.1 model (1/K) |
| flsh | 0 | no | Marca de inflexión ON/OFF del efecto de auto-calentamiento |
| rth | 0.0 | no | Thermal resistance (K/W) |
| cth | 0.0 | no | Thermal capacitance (J/W) |
| flcomp | 0.0 | no | Marca par la compatibilidad con el modelo v2.1 (0=v2.1) |
| tnom | 27.0 | no | Temperature at which parameters are specified (C) |
| dt | 0.0 | no | Temperature change w.r.t. chip temperature for particular transistor (K) |
| Temp | 27.0 | no | simulación de temperatura |
Hicum L2 V2.31¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | HICUM L2 V2.31 |
Descripción |
hicumL2V2p31n verilog device |
| Schematic entry | hicumL2V2p31n |
| Netlist entry | T |
Tipo |
AnalogComponent |
| Bitmap file | hicumL2V2p31n |
Propiedades |
129 |
| Category | verilog-a devices |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| c10 | 2.0E-30 | no | GICCR constant (A^2s) |
| qp0 | 2.0E-14 | no | Zero-bias hole charge (Coul) |
| ich | 0.0 | no | High-current correction for 2D and 3D effects (A) |
| hf0 | 1.0 | no | Weight factor for the low current minority charge |
| hfe | 1.0 | no | Factor de ponderación de carga del emisor minoritario en HTBs |
| hfc | 1.0 | no | Factor de ponderación de carga del colector minoritario en HBTs |
| hjei | 1.0 | no | Factor de ponderación de carga de la unión B-E en HBTs |
| ahjei | 0.0 | no | Parameter describing the slope of hjEi(VBE) |
| rhjei | 1.0 | no | Smoothing parameter for hjEi(VBE) at high voltage |
| hjci | 1.0 | no | Factor de ponderación de carga de la unión B-C en HBTs |
| ibeis | 1.0E-18 | no | Internal B-E saturation current (A) |
| mbei | 1.0 | no | Factor ideal de corriente interna B-E |
| ireis | 0.0 | no | Internal B-E recombination saturation current (A) |
| mrei | 2.0 | no | Factor ideal de corriente de recombinación interna B-E |
| ibeps | 0.0 | no | Peripheral B-E saturation current (A) |
| mbep | 1.0 | no | Factor ideal de corriente periférica B-E |
| ireps | 0.0 | no | Peripheral B-E recombination saturation current (A) |
| mrep | 2.0 | no | Factor ideal de corriente de recombinación periférica B-E |
| mcf | 1.0 | no | Factor no ideal para III-V HBTs |
| tbhrec | 0.0 | no | Base current recombination time constant at B-C barrier for high forward injection (s) |
| ibcis | 1.0E-16 | no | Internal B-C saturation current (A) |
| mbci | 1.0 | no | Factor ideal de corriente interna B-C |
| ibcxs | 0.0 | no | External B-C saturation current (A) |
| mbcx | 1.0 | no | Factor ideal de corriente externa B-C |
| ibets | 0.0 | no | B-E tunneling saturation current (A) |
| abet | 40 | no | Factor exponencial para la corriente de túnel |
| tunode | 1 | no | Especifica el nodo de conexión de base para la corriente de efecto túnel |
| favl | 0.0 | no | Avalanche current factor (1/V) |
| qavl | 0.0 | no | Exponent factor for avalanche current (Coul) |
| alfav | 0.0 | no | Relative TC for FAVL (1/K) |
| alqav | 0.0 | no | Relative TC for QAVL (1/K) |
| rbi0 | 0.0 | no | Zero bias internal base resistance (Ohm) |
| rbx | 0.0 | no | External base series resistance (Ohm) |
| fgeo | 0.6557 | no | Factor para la dependencia geométrica de la corriente de avalancha del emisor |
| fdqr0 | 0.0 | no | Factor de corrección de la modulación por B-E y B-C de la capa de carga espacial |
| fcrbi | 0.0 | no | Porcentaje de desviación HF a la capacidad interna total (efecto lateral NQS) |
| fqi | 1.0 | no | Porcentaje de la carga interna a minoria total |
| re | 0.0 | no | Emitter series resistance (Ohm) |
| rcx | 0.0 | no | External collector series resistance (Ohm) |
| itss | 0.0 | no | Substrate transistor transfer saturation current (A) |
| msf | 1.0 | no | Factor ideal directo de la corriente de transferencia del sustrato |
| iscs | 0.0 | no | C-S diode saturation current (A) |
| msc | 1.0 | no | Factor ideal de la corriente del diodo C-S |
| tsf | 0.0 | no | Transit time for forward operation of substrate transistor (s) |
| rsu | 0.0 | no | Substrate series resistance (Ohm) |
| csu | 0.0 | no | Substrate shunt capacitance (F) |
| cjei0 | 1.0E-20 | no | Internal B-E zero-bias depletion capacitance (F) |
| vdei | 0.9 | no | Internal B-E built-in potential (V) |
| zei | 0.5 | no | Coeficiente de graduación interna B-E |
| ajei | 2.5 | no | Porcentaje del valor máximo de polarización de la capacidad B-E interna |
| cjep0 | 1.0E-20 | no | Peripheral B-E zero-bias depletion capacitance (F) |
| vdep | 0.9 | no | Peripheral B-E built-in potential (V) |
| zep | 0.5 | no | Coeficiente del gradiente periférico B-E |
| ajep | 2.5 | no | Porcentaje del valor máximo de polarización de la capacidad B-E periférica |
| cjci0 | 1.0E-20 | no | Internal B-C zero-bias depletion capacitance (F) |
| vdci | 0.7 | no | Internal B-C built-in potential (V) |
| zci | 0.4 | no | Coeficiente de graduación interna B-C |
| vptci | 100 | no | Internal B-C punch-through voltage (V) |
| cjcx0 | 1.0E-20 | no | External B-C zero-bias depletion capacitance (F) |
| vdcx | 0.7 | no | External B-C built-in potential (V) |
| zcx | 0.4 | no | Coeficiente de graduación externa B-C |
| vptcx | 100 | no | External B-C punch-through voltage (V) |
| fbcpar | 0.0 | no | Factor de particionado de la capacidad parásita en la unión B-C |
| fbepar | 1.0 | no | Factor de particionado de la capacidad parásita en la unión B-E |
| cjs0 | 0.0 | no | C-S zero-bias depletion capacitance (F) |
| vds | 0.6 | no | C-S built-in potential (V) |
| zs | 0.5 | no | Coeficiente de graduación C-S |
| vpts | 100 | no | C-S punch-through voltage (V) |
| t0 | 0.0 | no | Low current forward transit time at VBC=0V (s) |
| dt0h | 0.0 | no | Time constant for base and B-C space charge layer width modulation (s) |
| tbvl | 0.0 | no | Time constant for modeling carrier jam at low VCE (s) |
| tef0 | 0.0 | no | Neutral emitter storage time (s) |
| gtfe | 1.0 | no | Factor exponencial para la dependencia de corriente del tiempo de almacenamiento de emisor neutro |
| thcs | 0.0 | no | Saturation time constant at high current densities (s) |
| ahc | 0.1 | no | Factor de suavizado para la dependencia de corriente del tiempo de transición de base y colector |
| fthc | 0.0 | no | Factor de particionado para la porción de la base y el colector |
| rci0 | 150 | no | Internal collector resistance at low electric field (Ohm) |
| vlim | 0.5 | no | Voltage separating ohmic and saturation velocity regime (V) |
| vces | 0.1 | no | Internal C-E saturation voltage (V) |
| vpt | 100.0 | no | Collector punch-through voltage (V) |
| tr | 0.0 | no | Storage time for inverse operation (s) |
| vcbar | 0.0 | no | Barrier voltage (V) |
| icbar | 0.0 | no | Normalization parameter (A) |
| acbar | 0.01 | no | Smoothing parameter for barrier voltage |
| delck | 2.0 | no | fitting factor for critical current |
| cbepar | 0.0 | no | Total parasitic B-E capacitance (F) |
| cbcpar | 0.0 | no | Total parasitic B-C capacitance (F) |
| alqf | 0.167 | no | Factor para el tiempo de retardo adicional de aminoración de carga |
| alit | 0.333 | no | Factor para el tiempo de retardo adicional de corriente de transferencia |
| flnqs | 0 | no | Marca de inflexión ON/OFF de efecto vertical NQS |
| kf | 0.0 | no | Coeficiente de ruido parpadeante |
| af | 2.0 | no | Factor exponencial de ruido parpadeante |
| cfbe | -1 | no | Marca para determinar la etiqueta de la fuente de ruido de parpadeo |
| flcono | 0 | no | Flag for turning on and off of correlated noise implementation |
| kfre | 0.0 | no | Emitter resistance flicker noise coefficient |
| afre | 2.0 | no | Emitter resistance flicker noise exponent factor |
| latb | 0.0 | no | Factor de escala para la carga de aminoración del colector en la dirección del ancho del emisor |
| latl | 0.0 | no | Factor de escala para la carga de aminoración del colector en la dirección del largo del emisor |
| vgb | 1.17 | no | Bandgap voltage extrapolated to 0 K (V) |
| alt0 | 0.0 | no | First order relative TC of parameter T0 (1/K) |
| kt0 | 0.0 | no | TC relativo de segundo orden del parámetro T0 |
| zetaci | 0.0 | no | Exponente de temperatura para RCI0 |
| alvs | 0.0 | no | Relative TC of saturation drift velocity (1/K) |
| alces | 0.0 | no | Relative TC of VCES (1/K) |
| zetarbi | 0.0 | no | Exponente de temperatura de la resistencia de base interna |
| zetarbx | 0.0 | no | Exponente de temperatura de la resistencia de base externa |
| zetarcx | 0.0 | no | Exponente de temparatura de la resistencia de colector externa |
| zetare | 0.0 | no | Exponente de temperatura de la resistencia del emisor |
| zetacx | 1.0 | no | Exponente de mobilidad de la temperatura en el tiempo de transición del sustrato del transistor |
| vge | 1.17 | no | Effective emitter bandgap voltage (V) |
| vgc | 1.17 | no | Effective collector bandgap voltage (V) |
| vgs | 1.17 | no | Effective substrate bandgap voltage (V) |
| f1vg | -1.02377e-4 | no | Ecuación de salto de banda del coeficiente K1 en función de T |
| f2vg | 4.3215e-4 | no | Ecuación de salto de banda del coeficiente K2 en función de T |
| zetact | 3.0 | no | Coeficiente exponencial de transferencia de corriente en función de la temperatura |
| zetabet | 3.5 | no | Coeficiente exponencial de corriente en la unióm B-E en función de la temperatura |
| alb | 0.0 | no | Relative TC of forward current gain for V2.1 model (1/K) |
| dvgbe | 0 | no | Bandgap difference between B and B-E junction used for hjEi0 and hf0 (V) |
| zetahjei | 1 | no | Temperature coefficient for ahjEi |
| zetavgbe | 1 | no | Temperature coefficient for hjEi0 |
| flsh | 0 | no | Marca de inflexión ON/OFF del efecto de auto-calentamiento |
| rth | 0.0 | no | Thermal resistance (K/W) |
| zetarth | 0.0 | no | Temperature coefficient for Rth |
| alrth | 0.0 | no | First order relative TC of parameter Rth (1/K) |
| cth | 0.0 | no | Thermal capacitance (J/W) |
| flcomp | 0.0 | no | Marca par la compatibilidad con el modelo v2.1 (0=v2.1) |
| tnom | 27.0 | no | Temperature at which parameters are specified (C) |
| dt | 0.0 | no | Temperature change w.r.t. chip temperature for particular transistor (K) |
| Temp | 27.0 | no | simulación de temperatura |
Photodiode¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Photodiode |
Descripción |
Photodiode verilog device |
| Schematic entry | photodiode |
| Netlist entry | PD |
Tipo |
AnalogComponent |
| Bitmap file | photodiode |
Propiedades |
23 |
| Category | verilog-a devices |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| N | 1.35 | no | photodiode emission coefficient |
| Rseries | 1e-3 | no | series lead resistance (Ohm) |
| Is | 0.34e-12 | no | diode dark current (A) |
| Bv | 60 | no | reverse breakdown voltage (V) |
| Ibv | 1e-3 | no | current at reverse breakdown voltage (A) |
| Vj | 0.7 | no | junction potential (V) |
| Cj0 | 60e-12 | no | zero-bias junction capacitance (F) |
| M | 0.5 | no | coeficiente de graduación |
| Area | 1.0 | no | diode relative area |
| Tnom | 26.85 | no | parameter measurement temperature (Celsius) |
| Fc | 0.5 | no | coeficiente de pérdida de capacidad en polarización directa |
| Tt | 10e-9 | no | transit time (s) |
| Xti | 3.0 | no | exponente de temperatura de la corriente de saturación |
| Eg | 1.16 | no | energy gap (eV) |
| Responsivity | 0.5 | no | responsivity (A/W) |
| Rsh | 5e8 | no | shunt resistance (Ohm) |
| QEpercent | 80 | no | quantum efficiency (%) |
| Lambda | 900 | no | light wavelength (nm) |
| LEVEL | 1 | no | responsivity calculator selector |
| Kf | 1e-12 | no | coeficiente de ruido térmico |
| Af | 1.0 | no | exponente de ruido térmico |
| Ffe | 1.0 | no | exponente de frecuencia de ruido térmico |
| Temp | 26.85 | no | simulación de temperatura |
Phototransistor¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Phototransistor |
Descripción |
Phototransistor verilog device |
| Schematic entry | phototransistor |
| Netlist entry | PT |
Tipo |
AnalogComponent |
| Bitmap file | phototransistor |
Propiedades |
30 |
| Category | verilog-a devices |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Bf | 100 | no | ganancia (beta) directa |
| Br | 0.1 | no | ganancia (beta) inversa |
| Is | 1e-10 | no | dark current (A) |
| Nf | 1 | no | coeficiente de emisión directa |
| Nr | 1 | no | coeficiente de emisión inversa |
| Vaf | 100 | no | forward early voltage (V) |
| Var | 100 | no | reverse early voltage (V) |
| Mje | 0.33 | no | factor exponencial de la unión base-emisor |
| Vje | 0.75 | no | base-emitter junction built-in potential (V) |
| Cje | 1e-12 | no | base-emitter zero-bias depletion capacitance (F) |
| Mjc | 0.33 | no | factor exponencial de la unión base colector |
| Vjc | 0.75 | no | base-collector junction built-in potential (V) |
| Cjc | 2e-12 | no | base-collector zero-bias depletion capacitance (F) |
| Tr | 100n | no | ideal reverse transit time (s) |
| Tf | 0.1n | no | ideal forward transit time (s) |
| Ikf | 10 | no | high current corner for forward beta (A) |
| Ikr | 10 | no | high current corner for reverse beta (A) |
| Rc | 10 | no | collector series resistance (Ohm) |
| Re | 1 | no | emitter series resistance (Ohm) |
| Rb | 100 | no | base series resistance (Ohm) |
| Kf | 1e-12 | no | coeficiente de ruido térmico |
| Ffe | 1 | no | coeficiente de ruido térmico |
| Af | 1 | no | exponente de ruido térmico |
| Responsivity | 1.5 | no | responsivity at relative selectivity=100% (A/W) |
| P0 | 2.6122e3 | no | relative selectivity polynomial coefficient |
| P1 | -1.489e1 | no | relative selectivity polynomial coefficient |
| P2 | 3.0332e-2 | no | relative selectivity polynomial coefficient |
| P3 | -2.5708e-5 | no | relative selectivity polynomial coefficient |
| P4 | 7.6923e-9 | no | relative selectivity polynomial coefficient |
| Temp | 26.85 | no | simulación de temperatura |
Nigbt¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | NIGBT |
Descripción |
NIGBT verilog device |
| Schematic entry | nigbt |
| Netlist entry | T |
Tipo |
AnalogComponent |
| Bitmap file | nigbt |
Propiedades |
19 |
| Category | verilog-a devices |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Agd | 5.0e-6 | no | gate-drain overlap area (m**2) |
| Area | 1.0e-5 | no | area of the device (m**2) |
| Kp | 0.38 | no | MOS transconductance (A/V**2) |
| Tau | 7.1e-6 | no | ambipolar recombination lifetime (s) |
| Wb | 9.0e-5 | no | metallurgical base width (m) |
| BVf | 1.0 | no | avalanche uniformity factor |
| BVn | 4.0 | no | avalanche multiplication exponent |
| Cgs | 1.24e-8 | no | gate-source capacitance per unit area (F/cm**2) |
| Coxd | 3.5e-8 | no | gate-drain oxide capacitance per unit area (F/cm**2) |
| Jsne | 6.5e-13 | no | emitter saturation current density (A/cm**2) |
| Kf | 1.0 | no | triode region factor |
| Mun | 1.5e-3 | no | electron mobility (cm**2/Vs) |
| Mup | 4.5e-2 | no | hole mobility (cm**2/Vs) |
| Nb | 2.0e14 | no | base doping (1/cm**3) |
| Theta | 0.02 | no | transverse field factor (1/V) |
| Vt | 4.7 | no | threshold voltage (V) |
| Vtd | 1.0e-3 | no | gate-drain overlap depletion threshold (V) |
| Tnom | 26.85 | no | parameter measurement temperature (Celsius) |
| Temp | 26.85 | no | simulation temperature (Celsius) |
Voltage Controlled Resistor¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Voltage Controlled Resistor |
Descripción |
fuente de tensión controlada por tensión |
| Schematic entry | vcresistor |
| Netlist entry | VCR |
Tipo |
AnalogComponent |
| Bitmap file | vcresistor |
Propiedades |
1 |
| Category | verilog-a devices |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| gain | 1 | Sí |
resistance gain |
Digital Components¶
Digital Source¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | fuente digital |
Descripción |
fuente digital |
| Schematic entry | DigiSource |
| Netlist entry | S |
Tipo |
Componente |
| Bitmap file | digi_source |
Propiedades |
4 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Num | 1 | Sí |
número de la conexión |
| init | low | no | initial output value [low, high] |
| times | 1ns; 1ns | no | lista de veces que se cambia el valor de salida |
| V | 1 V | no | tensión de alto nivel |
Inversor¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Inversor |
Descripción |
inversor lógico |
| Schematic entry | Inv |
| Netlist entry | Y |
Tipo |
Componente |
| Bitmap file | inverter |
Propiedades |
4 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| V | 1 V | no | tensión de alto nivel |
| t | 0 | no | tiempo de retardo |
| TR | 10 | no | transfer function scaling factor |
| Symbol | old | no | schematic symbol [old, DIN40900] |
N-Port Or¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | puerto-n OR |
Descripción |
OR lógico |
| Schematic entry | OR |
| Netlist entry | Y |
Tipo |
Componente |
| Bitmap file | or |
Propiedades |
5 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| in | 2 | no | número de puertos de entrada |
| V | 1 V | no | tensión de alto nivel |
| t | 0 | no | tiempo de retardo |
| TR | 10 | no | transfer function scaling factor |
| Symbol | old | no | schematic symbol [old, DIN40900] |
N-Port Nor¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | puerto-n NOR |
Descripción |
NOR lógico |
| Schematic entry | NOR |
| Netlist entry | Y |
Tipo |
Componente |
| Bitmap file | nor |
Propiedades |
5 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| in | 2 | no | número de puertos de entrada |
| V | 1 V | no | tensión de alto nivel |
| t | 0 | no | tiempo de retardo |
| TR | 10 | no | transfer function scaling factor |
| Symbol | old | no | schematic symbol [old, DIN40900] |
N-Port And¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | puerto-n AND |
Descripción |
AND lógico |
| Schematic entry | AND |
| Netlist entry | Y |
Tipo |
Componente |
| Bitmap file | and |
Propiedades |
5 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| in | 2 | no | número de puertos de entrada |
| V | 1 V | no | tensión de alto nivel |
| t | 0 | no | tiempo de retardo |
| TR | 10 | no | transfer function scaling factor |
| Symbol | old | no | schematic symbol [old, DIN40900] |
N-Port Nand¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | puerto-n NAND |
Descripción |
NAND lógico |
| Schematic entry | NAND |
| Netlist entry | Y |
Tipo |
Componente |
| Bitmap file | nand |
Propiedades |
5 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| in | 2 | no | número de puertos de entrada |
| V | 1 V | no | tensión de alto nivel |
| t | 0 | no | tiempo de retardo |
| TR | 10 | no | transfer function scaling factor |
| Symbol | old | no | schematic symbol [old, DIN40900] |
N-Port Xor¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | puerto-n XOR |
Descripción |
XOR lógico |
| Schematic entry | XOR |
| Netlist entry | Y |
Tipo |
Componente |
| Bitmap file | xor |
Propiedades |
5 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| in | 2 | no | número de puertos de entrada |
| V | 1 V | no | tensión de alto nivel |
| t | 0 | no | tiempo de retardo |
| TR | 10 | no | transfer function scaling factor |
| Symbol | old | no | schematic symbol [old, DIN40900] |
N-Port Xnor¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | puerto-n XNOR |
Descripción |
XNOR lógico |
| Schematic entry | XNOR |
| Netlist entry | Y |
Tipo |
Componente |
| Bitmap file | xnor |
Propiedades |
5 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| in | 2 | no | número de puertos de entrada |
| V | 1 V | no | tensión de alto nivel |
| t | 0 | no | tiempo de retardo |
| TR | 10 | no | transfer function scaling factor |
| Symbol | old | no | schematic symbol [old, DIN40900] |
Buffer¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Buffer |
Descripción |
logical buffer |
| Schematic entry | Buf |
| Netlist entry | Y |
Tipo |
Componente |
| Bitmap file | buffer |
Propiedades |
4 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| V | 1 V | no | tensión de alto nivel |
| t | 0 | no | tiempo de retardo |
| TR | 10 | no | transfer function scaling factor |
| Symbol | old | no | schematic symbol [old, DIN40900] |
4X2 Andor¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | 4x2 AndOr |
Descripción |
4x2 andor verilog device |
| Schematic entry | andor4x2 |
| Netlist entry | Y |
Tipo |
Componente |
| Bitmap file | andor4x2 |
Propiedades |
2 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| TR | 6 | no | transfer function high scaling factor |
| Delay | 1 ns | no | output delay (s) |
4X3 Andor¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | 4x3 AndOr |
Descripción |
4x3 andor verilog device |
| Schematic entry | andor4x3 |
| Netlist entry | Y |
Tipo |
Componente |
| Bitmap file | andor4x3 |
Propiedades |
2 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| TR | 6 | no | transfer function high scaling factor |
| Delay | 1 ns | no | output delay (s) |
4X4 Andor¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | 4x4 AndOr |
Descripción |
4x4 andor verilog device |
| Schematic entry | andor4x4 |
| Netlist entry | Y |
Tipo |
Componente |
| Bitmap file | andor4x4 |
Propiedades |
2 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| TR | 6 | no | transfer function high scaling factor |
| Delay | 1 ns | no | output delay (s) |
2To1 Mux¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | 2to1 Mux |
Descripción |
2to1 multiplexer verilog device |
| Schematic entry | mux2to1 |
| Netlist entry | Y |
Tipo |
Componente |
| Bitmap file | mux2to1 |
Propiedades |
2 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| TR | 6 | no | transfer function high scaling factor |
| Delay | 1 ns | no | output delay (s) |
4To1 Mux¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | 4to1 Mux |
Descripción |
4to1 multiplexer verilog device |
| Schematic entry | mux4to1 |
| Netlist entry | Y |
Tipo |
Componente |
| Bitmap file | mux4to1 |
Propiedades |
2 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| TR | 6 | no | transfer function high scaling factor |
| Delay | 1 ns | no | output delay (s) |
8To1 Mux¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | 8to1 Mux |
Descripción |
8to1 multiplexer verilog device |
| Schematic entry | mux8to1 |
| Netlist entry | Y |
Tipo |
Componente |
| Bitmap file | mux8to1 |
Propiedades |
2 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| TR | 6 | no | transfer function high scaling factor |
| Delay | 1 ns | no | output delay (s) |
2To4 Demux¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | 2to4 Demux |
Descripción |
2to4 demultiplexer verilog device |
| Schematic entry | dmux2to4 |
| Netlist entry | Y |
Tipo |
Componente |
| Bitmap file | dmux2to4 |
Propiedades |
2 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| TR | 6 | no | transfer function high scaling factor |
| Delay | 1 ns | no | output delay (s) |
3To8 Demux¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | 3to8 Demux |
Descripción |
3to8 demultiplexer verilog device |
| Schematic entry | dmux3to8 |
| Netlist entry | Y |
Tipo |
Componente |
| Bitmap file | dmux3to8 |
Propiedades |
2 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| TR | 6 | no | transfer function high scaling factor |
| Delay | 1 ns | no | output delay (s) |
4To16 Demux¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | 4to16 Demux |
Descripción |
4to16 demultiplexer verilog device |
| Schematic entry | dmux4to16 |
| Netlist entry | Y |
Tipo |
Componente |
| Bitmap file | dmux4to16 |
Propiedades |
2 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| TR | 6 | no | transfer function high scaling factor |
| Delay | 1 ns | no | output delay (s) |
1Bit Halfadder¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | 1Bit HalfAdder |
Descripción |
1bit half adder verilog device |
| Schematic entry | ha1b |
| Netlist entry | Y |
Tipo |
Componente |
| Bitmap file | ha1b |
Propiedades |
2 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| TR | 6 | no | transfer function high scaling factor |
| Delay | 1 ns | no | output delay (s) |
1Bit Fulladder¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | 1Bit FullAdder |
Descripción |
1bit full adder verilog device |
| Schematic entry | fa1b |
| Netlist entry | Y |
Tipo |
Componente |
| Bitmap file | fa1b |
Propiedades |
2 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| TR | 6 | no | transfer function high scaling factor |
| Delay | 1 ns | no | output delay (s) |
2Bit Fulladder¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | 2Bit FullAdder |
Descripción |
2bit full adder verilog device |
| Schematic entry | fa2b |
| Netlist entry | Y |
Tipo |
Componente |
| Bitmap file | fa2b |
Propiedades |
2 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| TR | 6 | no | transfer function high scaling factor |
| Delay | 1 ns | no | output delay (s) |
Rs-Flipflop¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Biestable RS |
Descripción |
Biestable RS |
| Schematic entry | RSFF |
| Netlist entry | Y |
Tipo |
DigitalComponent |
| Bitmap file | rsflipflop |
Propiedades |
1 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| t | 0 | no | tiempo de retardo |
D-Flipflop¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Biestable-D |
Descripción |
Biestable D con reset asíncrono |
| Schematic entry | DFF |
| Netlist entry | Y |
Tipo |
DigitalComponent |
| Bitmap file | dflipflop |
Propiedades |
1 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| t | 0 | no | tiempo de retardo |
D-Flipflop W/ Sr¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | D-FlipFlop w/ SR |
Descripción |
D flip flop with set and reset verilog device |
| Schematic entry | dff_SR |
| Netlist entry | Y |
Tipo |
Componente |
| Bitmap file | dff_SR |
Propiedades |
3 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| TR_H | 6 | no | cross coupled gate transfer function high scaling factor |
| TR_L | 5 | no | cross coupled gate transfer function low scaling factor |
| Delay | 1 ns | no | cross coupled gate delay (s) |
Jk-Flipflop¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Biestable JK |
Descripción |
Biestable JK con set y reset asíncronos |
| Schematic entry | JKFF |
| Netlist entry | Y |
Tipo |
DigitalComponent |
| Bitmap file | jkflipflop |
Propiedades |
1 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| t | 0 | no | tiempo de retardo |
Jk-Flipflop W/ Sr¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | JK-FlipFlop w/ SR |
Descripción |
jk flip flop with set and reset verilog device |
| Schematic entry | jkff_SR |
| Netlist entry | Y |
Tipo |
Componente |
| Bitmap file | jkff_SR |
Propiedades |
3 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| TR_H | 6 | no | cross coupled gate transfer function high scaling factor |
| TR_L | 5 | no | cross coupled gate transfer function low scaling factor |
| Delay | 1 ns | no | cross coupled gate delay (s) |
T-Flipflop W/ Sr¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | T-FlipFlop w/ SR |
Descripción |
T flip flop with set and reset verilog device |
| Schematic entry | tff_SR |
| Netlist entry | Y |
Tipo |
Componente |
| Bitmap file | tff_SR |
Propiedades |
3 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| TR_H | 6 | no | cross coupled gate transfer function high scaling factor |
| TR_L | 5 | no | cross coupled gate transfer function low scaling factor |
| Delay | 1 ns | no | cross coupled gate delay (s) |
Gated D-Latch¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Gated D-Latch |
Descripción |
gated D latch verilog device |
| Schematic entry | gatedDlatch |
| Netlist entry | Y |
Tipo |
Componente |
| Bitmap file | gatedDlatch |
Propiedades |
3 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| TR_H | 6 | no | cross coupled gate transfer function high scaling factor |
| TR_L | 5 | no | cross coupled gate transfer function low scaling factor |
| Delay | 1 ns | no | cross coupled gate delay (s) |
Logic 0¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Logic 0 |
Descripción |
logic 0 verilog device |
| Schematic entry | logic_0 |
| Netlist entry | S |
Tipo |
Componente |
| Bitmap file | logic_0 |
Propiedades |
1 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| LEVEL | 0 | no | logic 0 voltage level (V) |
Logic 1¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Logic 1 |
Descripción |
logic 1 verilog device |
| Schematic entry | logic_1 |
| Netlist entry | S |
Tipo |
Componente |
| Bitmap file | logic_1 |
Propiedades |
1 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| LEVEL | 1 | no | logic 1 voltage level (V) |
2Bit Pattern¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | 2Bit Pattern |
Descripción |
2bit pattern generator verilog device |
| Schematic entry | pad2bit |
| Netlist entry | Y |
Tipo |
Componente |
| Bitmap file | pad2bit |
Propiedades |
1 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Number | 0 | no | pad output value |
3Bit Pattern¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | 3Bit Pattern |
Descripción |
3bit pattern generator verilog device |
| Schematic entry | pad3bit |
| Netlist entry | Y |
Tipo |
Componente |
| Bitmap file | pad3bit |
Propiedades |
1 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Number | 0 | no | pad output value |
4Bit Pattern¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | 4Bit Pattern |
Descripción |
4bit pattern generator verilog device |
| Schematic entry | pad4bit |
| Netlist entry | Y |
Tipo |
Componente |
| Bitmap file | pad4bit |
Propiedades |
1 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Number | 0 | no | pad output value |
A2D Level Shifter¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | A2D Level Shifter |
Descripción |
data voltage level shifter (analogue to digital) verilog device |
| Schematic entry | DLS_nto1 |
| Netlist entry | Y |
Tipo |
AnalogComponent |
| Bitmap file | DLS_nto1 |
Propiedades |
2 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| LEVEL | 5 V | no | voltage level (V) |
| Delay | 1 ns | no | time delay (s) |
D2A Level Shifter¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | D2A Level Shifter |
Descripción |
data voltage level shifter (digital to analogue) verilog device |
| Schematic entry | DLS_1ton |
| Netlist entry | Y |
Tipo |
AnalogComponent |
| Bitmap file | DLS_1ton |
Propiedades |
2 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| LEVEL | 5 V | no | voltage level |
| Delay | 1 ns | no | time delay (s) |
4Bit Bin2Grey¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | 4Bit Bin2Grey |
Descripción |
4bit binary to grey converter verilog device |
| Schematic entry | binarytogrey4bit |
| Netlist entry | Y |
Tipo |
Componente |
| Bitmap file | binarytogrey4bit |
Propiedades |
2 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| TR | 6 | no | transfer function scaling factor |
| Delay | 1 ns | no | output delay (s) |
4Bit Grey2Bin¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | 4Bit Grey2Bin |
Descripción |
4bit grey to binary converter verilog device |
| Schematic entry | greytobinary4bit |
| Netlist entry | Y |
Tipo |
Componente |
| Bitmap file | greytobinary4bit |
Propiedades |
2 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| TR | 6 | no | transfer function scaling factor |
| Delay | 1 ns | no | output delay (s) |
1Bit Comparator¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | 1Bit Comparator |
Descripción |
1bit comparator verilog device |
| Schematic entry | comp_1bit |
| Netlist entry | Y |
Tipo |
Componente |
| Bitmap file | comp_1bit |
Propiedades |
2 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| TR | 6 | no | transfer function high scaling factor |
| Delay | 1 ns | no | output delay (s) |
2Bit Comparator¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | 2Bit Comparator |
Descripción |
2bit comparator verilog device |
| Schematic entry | comp_2bit |
| Netlist entry | Y |
Tipo |
Componente |
| Bitmap file | comp_2bit |
Propiedades |
2 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| TR | 6 | no | transfer function high scaling factor |
| Delay | 1 ns | no | output delay (s) |
4Bit Comparator¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | 4Bit Comparator |
Descripción |
4bit comparator verilog device |
| Schematic entry | comp_4bit |
| Netlist entry | Y |
Tipo |
Componente |
| Bitmap file | comp_4bit |
Propiedades |
2 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| TR | 6 | no | transfer function high scaling factor |
| Delay | 1 ns | no | output delay (s) |
4Bit Hpri-Bin¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | 4Bit HPRI-Bin |
Descripción |
4bit highest priority encoder (binary form) verilog device |
| Schematic entry | hpribin4bit |
| Netlist entry | Y |
Tipo |
Componente |
| Bitmap file | hpribin4bit |
Propiedades |
2 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| TR | 6 | no | transfer function scaling factor |
| Delay | 1 ns | no | output delay (s) |
Vhdl File¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Archivo VHDL |
Descripción |
Archivo VHDL |
| Schematic entry | VHDL |
| Netlist entry | X |
Tipo |
DigitalComponent |
| Bitmap file | vhdlfile |
Propiedades |
1 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| File | sub.vhdl | no | Nombre del archivo VHDL |
Verilog File¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Archivo Verilog |
Descripción |
Archivo Verilog |
| Schematic entry | Verilog |
| Netlist entry | X |
Tipo |
DigitalComponent |
| Bitmap file | vhdlfile |
Propiedades |
1 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| File | sub.v | no | Nombre del archivo Verilog |
Digital Simulation¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | simulación digital |
Descripción |
simulación digital |
| Schematic entry | .Digi |
| Netlist entry | Digi |
Tipo |
DigitalComponent |
| Bitmap file | digi |
Propiedades |
3 |
| Category | digital components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
Tipo |
TruthTable | Sí |
type of simulation [TruthTable, TimeList] |
| time | 10 ns | no | duración de la simulación de la Lista de Tiempos |
Modelo |
VHDL | no | netlist format [VHDL, Verilog] |
File Components¶
Spice Netlist¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | netlist SPICE |
Descripción |
archivo netlist SPICE |
| Schematic entry | SPICE |
| Netlist entry | X |
Tipo |
AnalogComponent |
| Bitmap file | spicefile |
Propiedades |
4 |
| Category | file components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| File | Sí |
x | |
| Ports | no | x | |
| Sim | Sí |
no | x |
| Preprocessor | none | no | x |
1-Port S Parameter File¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | archivo de parámetros S de 1-conexión |
Descripción |
archivo del parámetro S |
| Schematic entry | SPfile |
| Netlist entry | X |
Tipo |
AnalogComponent |
| Bitmap file | spfile1 |
Propiedades |
5 |
| Category | file components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| File | test.s1p | Sí |
nombre del archivo del parámetro s |
Datos |
rectangular | no | data type [rectangular, polar] |
| Interpolator | lineal |
no | interpolation type [linear, cubic] |
| duringDC | open | no | representation during DC analysis [open, short, shortall, unspecified] |
| Ports | 1 | no | número de conexiones |
2-Port S Parameter File¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | archivo de parámetros S de 2-conexiones |
Descripción |
archivo del parámetro S |
| Schematic entry | SPfile |
| Netlist entry | X |
Tipo |
AnalogComponent |
| Bitmap file | spfile2 |
Propiedades |
5 |
| Category | file components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| File | test.s2p | Sí |
nombre del archivo del parámetro s |
Datos |
rectangular | no | data type [rectangular, polar] |
| Interpolator | lineal |
no | interpolation type [linear, cubic] |
| duringDC | open | no | representation during DC analysis [open, short, shortall, unspecified] |
| Ports | 2 | no | número de conexiones |
N-Port S Parameter File¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | archivo de parámetros S de n-conexiones |
Descripción |
archivo del parámetro S |
| Schematic entry | SPfile |
| Netlist entry | X |
Tipo |
AnalogComponent |
| Bitmap file | spfile3 |
Propiedades |
5 |
| Category | file components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| File | test.s3p | Sí |
nombre del archivo del parámetro s |
Datos |
rectangular | no | data type [rectangular, polar] |
| Interpolator | lineal |
no | interpolation type [linear, cubic] |
| duringDC | open | no | representation during DC analysis [open, short, shortall, unspecified] |
| Ports | 3 | no | número de conexiones |
Subcircuito¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Subcircuito |
Descripción |
subcircuito |
| Schematic entry | Sub |
| Netlist entry | SUB |
Tipo |
Componente |
| Bitmap file | subcircuito |
Propiedades |
1 |
| Category | file components |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| File | no | nombre del archivo del esquema qucs |
Simulations¶
Dc Simulation¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | simulación dc |
Descripción |
simulación dc |
| Schematic entry | .DC |
| Netlist entry | DC |
Tipo |
AnalogComponent |
| Bitmap file | dc |
Propiedades |
9 |
| Category | simulations |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Temp | 26.85 | no | temperatura de simulación en grados Celsius |
| reltol | 0.001 | no | tolerancia relativa para converger |
| abstol | 1 pA | no | tolerancia absoluta para las intensidades |
| vntol | 1 uV | no | tolerancia absoluta para las tensiones |
| saveOPs | no | no | put operating points into dataset [yes, no] |
| MaxIter | 150 | no | numero máximo de las iteraciones antes de un error |
| saveAll | no | no | save subcircuit nodes into dataset [yes, no] |
| convHelper | none | no | preferred convergence algorithm [none, gMinStepping, SteepestDescent, LineSearch, Attenuation, SourceStepping] |
| Solver | CroutLU | no | method for solving the circuit matrix [CroutLU, DoolittleLU, HouseholderQR, HouseholderLQ, GolubSVD] |
Transient Simulation¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Simulación transitoria |
Descripción |
simulación transitoria |
| Schematic entry | .TR |
| Netlist entry | TR |
Tipo |
AnalogComponent |
| Bitmap file | tran |
Propiedades |
20 |
| Category | simulations |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
Tipo |
lin | Sí |
sweep type [lin, log, list, const] |
| Start | 0 | Sí |
tiempo de inicio en segundos |
| Stop | 1 ms | Sí |
tiempo de paro en segundos |
| Points | 11 | no | número de pasos de tiempo de la simulación |
| IntegrationMethod | Trapezoidal | no | integration method [Euler, Trapezoidal, Gear, AdamsMoulton] |
| Order | 2 | no | order of integration method (1-6) |
| InitialStep | 1 ns | no | tamaño del paso inicial en segundos |
| MinStep | 1e-16 | no | tamaño del paso mínimo en segundos |
| MaxIter | 150 | no | numero máximo de las iteraciones antes de un error |
| reltol | 0.001 | no | tolerancia relativa para converger |
| abstol | 1 pA | no | tolerancia absoluta para las intensidades |
| vntol | 1 uV | no | tolerancia absoluta para las tensiones |
| Temp | 26.85 | no | temperatura de simulación en grados Celsius |
| LTEreltol | 1e-3 | no | tolerancia relativa del error de redondeo local |
| LTEabstol | 1e-6 | no | tolerancia absoluta del error de redondeo local |
| LTEfactor | 1 | no | sobrestimación del error de redondeo local |
| Solver | CroutLU | no | method for solving the circuit matrix [CroutLU, DoolittleLU, HouseholderQR, HouseholderLQ, GolubSVD] |
| relaxTSR | no | no | relax time step raster [no, yes] |
| initialDC | Sí |
no | perform an initial DC analysis [yes, no] |
| MaxStep | 0 | no | tamaño máximo del paso en segundos |
Ac Simulation¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | simulación ac |
Descripción |
simulación ac |
| Schematic entry | .AC |
| Netlist entry | AC |
Tipo |
AnalogComponent |
| Bitmap file | ac |
Propiedades |
5 |
| Category | simulations |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
Tipo |
lin | Sí |
sweep type [lin, log, list, const] |
| Start | 1 GHz | Sí |
frecuencia de inicio en Hertzios |
| Stop | 10 GHz | Sí |
frecuencia de parada en Hertzios |
| Points | 19 | Sí |
número de pasos en la simulación |
| Noise | no | no | calculate noise voltages [yes, no] |
S-Parameter Simulation¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | simulación del parámetro S |
Descripción |
simulación del parámetro S |
| Schematic entry | .SP |
| Netlist entry | SP |
Tipo |
AnalogComponent |
| Bitmap file | sparameter |
Propiedades |
9 |
| Category | simulations |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
Tipo |
lin | Sí |
sweep type [lin, log, list, const] |
| Start | 1 GHz | Sí |
frecuencia de inicio en Hertzios |
| Stop | 10 GHz | Sí |
frecuencia de parada en Hertzios |
| Points | 19 | Sí |
número de pasos en la simulación |
| Noise | no | no | calculate noise parameters [yes, no] |
| NoiseIP | 1 | no | conexión de entrada para la figura de ruido |
| NoiseOP | 2 | no | conexión de salida para la figura de ruido |
| saveCVs | no | no | put characteristic values into dataset [yes, no] |
| saveAll | no | no | save subcircuit characteristic values into dataset [yes, no] |
Harmonic Balance¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Equilibrio armónico |
Descripción |
Simulación de equilibrio armónico |
| Schematic entry | .HB |
| Netlist entry | HB |
Tipo |
AnalogComponent |
| Bitmap file | hb |
Propiedades |
6 |
| Category | simulations |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| f | 1 GHz | no | frecuencia en Hertzios |
| n | 4 | Sí |
número de armónicos |
| iabstol | 1 pA | no | tolerancia absoluta para las intensidades |
| vabstol | 1 uV | no | tolerancia absoluta para las tensiones |
| reltol | 0.001 | no | tolerancia relativa para converger |
| MaxIter | 150 | no | numero máximo de las iteraciones antes de un error |
Parameter Sweep¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | Parámetro de barrido |
Descripción |
Parámetro de barrido |
| Schematic entry | .SW |
| Netlist entry | SW |
Tipo |
AnalogComponent |
| Bitmap file | sweep |
Propiedades |
6 |
| Category | simulations |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Sim | Sí |
simulación a realizar antes de activar el parámetro de barrido |
|
Tipo |
lin | Sí |
sweep type [lin, log, list, const] |
| Param | R1 | Sí |
parámetro para el barrido |
| Start | 5 Ohm | Sí |
valor de inicio para el barrido |
| Stop | 50 Ohm | Sí |
valor final para el barrido |
| Points | 20 | Sí |
número de pasos en la simulación |
Digital Simulation¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | simulación digital |
Descripción |
simulación digital |
| Schematic entry | .Digi |
| Netlist entry | Digi |
Tipo |
DigitalComponent |
| Bitmap file | digi |
Propiedades |
3 |
| Category | simulations |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
Tipo |
TruthTable | Sí |
type of simulation [TruthTable, TimeList] |
| time | 10 ns | no | duración de la simulación de la Lista de Tiempos |
Modelo |
VHDL | no | netlist format [VHDL, Verilog] |
Optimización¶
Symbol¶
Component Data¶
| Field | Valor |
|---|---|
| Caption | optimización |
Descripción |
Optimización |
| Schematic entry | .Opt |
| Netlist entry | Opt |
Tipo |
AnalogComponent |
| Bitmap file | optimize |
Propiedades |
2 |
| Category | simulations |
Parámetros del componente¶
Nombre |
Valor |
Display | Descripción |
|---|---|---|---|
| Sim | no | ||
| DE | 3|50|2|20|0.85|1|3|1e-6|10|100 | no |