Component Reference¶

Lumped Components¶

Resistor¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Resistor
Description	resistor
Schematic entry	`R`
Netlist entry	`R`
Type	AnalogComponent
Bitmap file	resistor
Properties	6
Category	lumped components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
R	50 Ohm	yes	ohmic resistance in Ohms
Temp	26.85	no	simulation temperature in degree Celsius
Tc1	0.0	no	first order temperature coefficient
Tc2	0.0	no	second order temperature coefficient
Tnom	26.85	no	temperature at which parameters were extracted
Symbol	european	no	schematic symbol [european, US]

Resistor Us¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Resistor US
Description	resistor
Schematic entry	`R`
Netlist entry	`R`
Type	AnalogComponent
Bitmap file	resistor_us
Properties	6
Category	lumped components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
R	50 Ohm	yes	ohmic resistance in Ohms
Temp	26.85	no	simulation temperature in degree Celsius
Tc1	0.0	no	first order temperature coefficient
Tc2	0.0	no	second order temperature coefficient
Tnom	26.85	no	temperature at which parameters were extracted
Symbol	US	no	schematic symbol [european, US]

Capacitor¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Capacitor
Description	capacitor
Schematic entry	`C`
Netlist entry	`C`
Type	AnalogComponent
Bitmap file	capacitor
Properties	3
Category	lumped components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
C	1 pF	yes	capacitance in Farad
V		no	initial voltage for transient simulation
Symbol	neutral	no	schematic symbol [neutral, polar]

Inductor¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Inductor
Description	inductor
Schematic entry	`L`
Netlist entry	`L`
Type	AnalogComponent
Bitmap file	inductor
Properties	2
Category	lumped components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
L	1 nH	yes	inductance in Henry
I		no	initial current for transient simulation

Ground¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Ground
Description	ground (reference potential)
Schematic entry	`GND`
Netlist entry
Type	Component
Bitmap file	gnd
Properties	0
Category	lumped components

Subcircuit Port¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Subcircuit Port
Description	port of a subcircuit
Schematic entry	`Port`
Netlist entry	`P`
Type	Component
Bitmap file	subport
Properties	2
Category	lumped components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Num	1	yes	number of the port within the subcircuit
Type	analog	no	type of the port (for digital simulation only) [analog, in, out, inout]

Transformer¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Transformer
Description	ideal transformer
Schematic entry	`Tr`
Netlist entry	`Tr`
Type	AnalogComponent
Bitmap file	transformer
Properties	1
Category	lumped components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
T	1	yes	voltage transformation ratio

Symmetric Transformer¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	symmetric Transformer
Description	ideal symmetrical transformer
Schematic entry	`sTr`
Netlist entry	`Tr`
Type	AnalogComponent
Bitmap file	symtrans
Properties	2
Category	lumped components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
T1	1	yes	voltage transformation ratio of coil 1
T2	1	yes	voltage transformation ratio of coil 2

Dc Block¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	dc Block
Description	dc block
Schematic entry	`DCBlock`
Netlist entry	`C`
Type	AnalogComponent
Bitmap file	dcblock
Properties	1
Category	lumped components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
C	1 uF	no	for transient simulation: capacitance in Farad

Dc Feed¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	dc Feed
Description	dc feed
Schematic entry	`DCFeed`
Netlist entry	`L`
Type	AnalogComponent
Bitmap file	dcfeed
Properties	1
Category	lumped components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
L	1 uH	no	for transient simulation: inductance in Henry

Bias T¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Bias T
Description	bias t
Schematic entry	`BiasT`
Netlist entry	`X`
Type	AnalogComponent
Bitmap file	biast
Properties	2
Category	lumped components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
L	1 uH	no	for transient simulation: inductance in Henry
C	1 uF	no	for transient simulation: capacitance in Farad

Attenuator¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Attenuator
Description	attenuator
Schematic entry	`Attenuator`
Netlist entry	`X`
Type	AnalogComponent
Bitmap file	attenuator
Properties	3
Category	lumped components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
L	10 dB	yes	power attenuation
Zref	50 Ohm	no	reference impedance
Temp	26.85	no	simulation temperature in degree Celsius

Amplifier¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Amplifier
Description	ideal amplifier
Schematic entry	`Amp`
Netlist entry	`X`
Type	AnalogComponent
Bitmap file	amplifier
Properties	4
Category	lumped components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
G	10	yes	voltage gain
Z1	50 Ohm	no	reference impedance of input port
Z2	50 Ohm	no	reference impedance of output port
NF	0 dB	no	noise figure

Isolator¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Isolator
Description	isolator
Schematic entry	`Isolator`
Netlist entry	`X`
Type	AnalogComponent
Bitmap file	isolator
Properties	3
Category	lumped components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Z1	50 Ohm	no	reference impedance of input port
Z2	50 Ohm	no	reference impedance of output port
Temp	26.85	no	simulation temperature in degree Celsius

Circulator¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Circulator
Description	circulator
Schematic entry	`Circulator`
Netlist entry	`X`
Type	AnalogComponent
Bitmap file	circulator
Properties	3
Category	lumped components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Z1	50 Ohm	no	reference impedance of port 1
Z2	50 Ohm	no	reference impedance of port 2
Z3	50 Ohm	no	reference impedance of port 3

Gyrator¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Gyrator
Description	gyrator (impedance inverter)
Schematic entry	`Gyrator`
Netlist entry	`X`
Type	AnalogComponent
Bitmap file	gyrator
Properties	2
Category	lumped components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
R	50 Ohm	yes	gyrator ratio
Zref	50 Ohm	no	reference impedance

Phase Shifter¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Phase Shifter
Description	phase shifter
Schematic entry	`PShift`
Netlist entry	`X`
Type	AnalogComponent
Bitmap file	pshifter
Properties	2
Category	lumped components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
phi	90	yes	phase shift in degree
Zref	50 Ohm	no	reference impedance

Coupler¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Coupler
Description	ideal coupler
Schematic entry	`Coupler`
Netlist entry	`X`
Type	AnalogComponent
Bitmap file	coupler
Properties	3
Category	lumped components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
k	0.7071	yes	coupling factor
phi	180	yes	phase shift of coupling path in degree
Z	50 Ohm	no	reference impedance

Hybrid¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Hybrid
Description	hybrid (unsymmetrical 3dB coupler)
Schematic entry	`Hybrid`
Netlist entry	`X`
Type	AnalogComponent
Bitmap file	hybrid
Properties	2
Category	lumped components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
phi	90	yes	phase shift in degree
Zref	50 Ohm	no	reference impedance

Current Probe¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Current Probe
Description	current probe
Schematic entry	`IProbe`
Netlist entry	`Pr`
Type	AnalogComponent
Bitmap file	iprobe
Properties	0
Category	lumped components

Voltage Probe¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Voltage Probe
Description	voltage probe
Schematic entry	`VProbe`
Netlist entry	`Pr`
Type	AnalogComponent
Bitmap file	vprobe
Properties	0
Category	lumped components

Mutual Inductors¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Mutual Inductors
Description	two mutual inductors
Schematic entry	`MUT`
Netlist entry	`Tr`
Type	AnalogComponent
Bitmap file	mutual
Properties	3
Category	lumped components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
L1	1 mH	no	inductance of coil 1
L2	1 mH	no	inductance of coil 2
k	0.9	no	coupling factor between coil 1 and 2

3 Mutual Inductors¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	3 Mutual Inductors
Description	three mutual inductors
Schematic entry	`MUT2`
Netlist entry	`Tr`
Type	AnalogComponent
Bitmap file	mutual2
Properties	6
Category	lumped components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
L1	1 mH	no	inductance of coil 1
L2	1 mH	no	inductance of coil 2
L3	1 mH	no	inductance of coil 3
k12	0.9	no	coupling factor between coil 1 and 2
k13	0.9	no	coupling factor between coil 1 and 3
k23	0.9	no	coupling factor between coil 2 and 3

N Mutual Inductors¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	N Mutual Inductors
Description	several mutual inductors
Schematic entry	`MUTX`
Netlist entry	`Tr`
Type	AnalogComponent
Bitmap file	mutualx
Properties	11
Category	lumped components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
coils	4	no	number of mutual inductances
L1	1 mH	no	inductance of coil 1
L2	1 mH	no	inductance of coil 2
L3	1 mH	no	inductance of coil 3
L4	1 mH	no	inductance of coil 4
k12	0.9	no	coupling factor between coil 1 and coil 2
k13	0.9	no	coupling factor between coil 1 and coil 3
k14	0.9	no	coupling factor between coil 1 and coil 4
k23	0.9	no	coupling factor between coil 2 and coil 3
k24	0.9	no	coupling factor between coil 2 and coil 4
k34	0.9	no	coupling factor between coil 3 and coil 4

Switch¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Switch
Description	switch (time controlled)
Schematic entry	`Switch`
Netlist entry	`S`
Type	AnalogComponent
Bitmap file	switch
Properties	6
Category	lumped components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
init	off	no	initial state [on, off]
time	1 ms	no	time when state changes (semicolon separated list possible, even numbered lists are repeated)
Ron	0	no	resistance of “on” state in ohms
Roff	1e12	no	resistance of “off” state in ohms
Temp	26.85	no	simulation temperature in degree Celsius
MaxDuration	1e-6	no	Max possible switch transition time (transition time 1/100 smallest value in ‘time’, or this number)

Relay¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Relay
Description	relay
Schematic entry	`Relais`
Netlist entry	`S`
Type	AnalogComponent
Bitmap file	relais
Properties	5
Category	lumped components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Vt	0.5 V	no	threshold voltage in Volts
Vh	0.1 V	no	hysteresis voltage in Volts
Ron	0	no	resistance of “on” state in Ohms
Roff	1e12	no	resistance of “off” state in Ohms
Temp	26.85	no	simulation temperature in degree Celsius

Equation Defined Rf Device¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Equation Defined RF Device
Description	equation defined RF device
Schematic entry	`RFEDD`
Netlist entry	`RF`
Type	AnalogComponent
Bitmap file	rfedd
Properties	7
Category	lumped components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Type	Y	no	type of parameters [Y, Z, S]
Ports	2	no	number of ports
duringDC	open	no	representation during DC analysis [open, short, unspecified, zerofrequency]
P11	0	no	parameter equation 11
P12	0	no	parameter equation 12
P21	0	no	parameter equation 21
P22	0	no	parameter equation 22

Equation Defined 2-Port Rf Device¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Equation Defined 2-port RF Device
Description	equation defined 2-port RF device
Schematic entry	`RFEDD2P`
Netlist entry	`RF`
Type	AnalogComponent
Bitmap file	rfedd
Properties	6
Category	lumped components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Type	Y	no	type of parameters [Y, Z, S, H, G, A, T]
duringDC	open	no	representation during DC analysis [open, short, unspecified, zerofrequency]
P11	0	no	parameter equation 11
P12	0	no	parameter equation 12
P21	0	no	parameter equation 21
P22	0	no	parameter equation 22

Sources¶

Dc Voltage Source¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	dc Voltage Source
Description	ideal dc voltage source
Schematic entry	`Vdc`
Netlist entry	`V`
Type	AnalogComponent
Bitmap file	dc_voltage
Properties	1
Category	sources

Component Parameters¶

Default Parameters
Name	Value	Display	Description
U	1 V	yes	voltage in Volts

Dc Current Source¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	dc Current Source
Description	ideal dc current source
Schematic entry	`Idc`
Netlist entry	`I`
Type	AnalogComponent
Bitmap file	dc_current
Properties	1
Category	sources

Component Parameters¶

Default Parameters
Name	Value	Display	Description
I	1 mA	yes	current in Ampere

Ac Voltage Source¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	ac Voltage Source
Description	ideal ac voltage source
Schematic entry	`Vac`
Netlist entry	`V`
Type	AnalogComponent
Bitmap file	ac_voltage
Properties	4
Category	sources

Component Parameters¶

Default Parameters
Name	Value	Display	Description
U	1 V	yes	peak voltage in Volts
f	1 GHz	no	frequency in Hertz
Phase	0	no	initial phase in degrees
Theta	0	no	damping factor (transient simulation only)

Ac Current Source¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	ac Current Source
Description	ideal ac current source
Schematic entry	`Iac`
Netlist entry	`I`
Type	AnalogComponent
Bitmap file	ac_current
Properties	4
Category	sources

Component Parameters¶

Default Parameters
Name	Value	Display	Description
I	1 mA	yes	peak current in Ampere
f	1 GHz	no	frequency in Hertz
Phase	0	no	initial phase in degrees
Theta	0	no	damping factor (transient simulation only)

Power Source¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Power Source
Description	ac power source
Schematic entry	`Pac`
Netlist entry	`P`
Type	AnalogComponent
Bitmap file	source
Properties	5
Category	sources

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Num	1	yes	number of the port
Z	50 Ohm	yes	port impedance
P	0 dBm	no	(available) ac power in Watts
f	1 GHz	no	frequency in Hertz
Temp	26.85	no	simulation temperature in degree Celsius

Noise Voltage Source¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Noise Voltage Source
Description	noise voltage source
Schematic entry	`Vnoise`
Netlist entry	`V`
Type	AnalogComponent
Bitmap file	noise_volt
Properties	4
Category	sources

Component Parameters¶

Default Parameters
Name	Value	Display	Description
u	1e-6	yes	voltage power spectral density in V^2/Hz
e	0	no	frequency exponent
c	1	no	frequency coefficient
a	0	no	additive frequency term

Noise Current Source¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Noise Current Source
Description	noise current source
Schematic entry	`Inoise`
Netlist entry	`I`
Type	AnalogComponent
Bitmap file	noise_current
Properties	4
Category	sources

Component Parameters¶

Default Parameters
Name	Value	Display	Description
i	1e-6	yes	current power spectral density in A^2/Hz
e	0	no	frequency exponent
c	1	no	frequency coefficient
a	0	no	additive frequency term

Voltage Controlled Current Source¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Voltage Controlled Current Source
Description	voltage controlled current source
Schematic entry	`VCCS`
Netlist entry	`SRC`
Type	AnalogComponent
Bitmap file	vccs
Properties	2
Category	sources

Component Parameters¶

Default Parameters
Name	Value	Display	Description
G	1 S	yes	forward transconductance
T	0	no	delay time

Current Controlled Current Source¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Current Controlled Current Source
Description	current controlled current source
Schematic entry	`CCCS`
Netlist entry	`SRC`
Type	AnalogComponent
Bitmap file	cccs
Properties	2
Category	sources

Component Parameters¶

Default Parameters
Name	Value	Display	Description
G	1	yes	forward transfer factor
T	0	no	delay time

Voltage Controlled Voltage Source¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Voltage Controlled Voltage Source
Description	voltage controlled voltage source
Schematic entry	`VCVS`
Netlist entry	`SRC`
Type	AnalogComponent
Bitmap file	vcvs
Properties	2
Category	sources

Component Parameters¶

Default Parameters
Name	Value	Display	Description
G	1	yes	forward transfer factor
T	0	no	delay time

Current Controlled Voltage Source¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Current Controlled Voltage Source
Description	current controlled voltage source
Schematic entry	`CCVS`
Netlist entry	`SRC`
Type	AnalogComponent
Bitmap file	ccvs
Properties	2
Category	sources

Component Parameters¶

Default Parameters
Name	Value	Display	Description
G	1 Ohm	yes	forward transfer factor
T	0	no	delay time

Voltage Pulse¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Voltage Pulse
Description	ideal voltage pulse source
Schematic entry	`Vpulse`
Netlist entry	`V`
Type	AnalogComponent
Bitmap file	vpulse
Properties	6
Category	sources

Component Parameters¶

Default Parameters
Name	Value	Display	Description
U1	0 V	yes	voltage before and after the pulse
U2	1 V	yes	voltage of the pulse
T1	0	yes	start time of the pulse
T2	1 ms	yes	ending time of the pulse
Tr	1 ns	no	rise time of the leading edge
Tf	1 ns	no	fall time of the trailing edge

Current Pulse¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Current Pulse
Description	ideal current pulse source
Schematic entry	`Ipulse`
Netlist entry	`I`
Type	AnalogComponent
Bitmap file	ipulse
Properties	6
Category	sources

Component Parameters¶

Default Parameters
Name	Value	Display	Description
I1	0	yes	current before and after the pulse
I2	1 A	yes	current of the pulse
T1	0	yes	start time of the pulse
T2	1 ms	yes	ending time of the pulse
Tr	1 ns	no	rise time of the leading edge
Tf	1 ns	no	fall time of the trailing edge

Rectangle Voltage¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Rectangle Voltage
Description	ideal rectangle voltage source
Schematic entry	`Vrect`
Netlist entry	`V`
Type	AnalogComponent
Bitmap file	vrect
Properties	6
Category	sources

Component Parameters¶

Default Parameters
Name	Value	Display	Description
U	1 V	yes	voltage of high signal
TH	1 ms	yes	duration of high pulses
TL	1 ms	yes	duration of low pulses
Tr	1 ns	no	rise time of the leading edge
Tf	1 ns	no	fall time of the trailing edge
Td	0 ns	no	initial delay time

Rectangle Current¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Rectangle Current
Description	ideal rectangle current source
Schematic entry	`Irect`
Netlist entry	`I`
Type	AnalogComponent
Bitmap file	irect
Properties	6
Category	sources

Component Parameters¶

Default Parameters
Name	Value	Display	Description
I	1 mA	yes	current at high pulse
TH	1 ms	yes	duration of high pulses
TL	1 ms	yes	duration of low pulses
Tr	1 ns	no	rise time of the leading edge
Tf	1 ns	no	fall time of the trailing edge
Td	0 ns	no	initial delay time

Correlated Noise Sources¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Correlated Noise Sources
Description	correlated current sources
Schematic entry	`IInoise`
Netlist entry	`SRC`
Type	AnalogComponent
Bitmap file	noise_ii
Properties	6
Category	sources

Component Parameters¶

Default Parameters
Name	Value	Display	Description
i1	1e-6	yes	current power spectral density of source 1
i2	1e-6	yes	current power spectral density of source 2
C	0.5	yes	normalized correlation coefficient
e	0	no	frequency exponent
c	1	no	frequency coefficient
a	0	no	additive frequency term

Correlated Noise Sources¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Correlated Noise Sources
Description	correlated current sources
Schematic entry	`VVnoise`
Netlist entry	`SRC`
Type	AnalogComponent
Bitmap file	noise_vv
Properties	6
Category	sources

Component Parameters¶

Default Parameters
Name	Value	Display	Description
v1	1e-6	yes	voltage power spectral density of source 1
v2	1e-6	yes	voltage power spectral density of source 2
C	0.5	yes	normalized correlation coefficient
e	0	no	frequency exponent
c	1	no	frequency coefficient
a	0	no	additive frequency term

Correlated Noise Sources¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Correlated Noise Sources
Description	correlated current sources
Schematic entry	`IVnoise`
Netlist entry	`SRC`
Type	AnalogComponent
Bitmap file	noise_iv
Properties	6
Category	sources

Component Parameters¶

Default Parameters
Name	Value	Display	Description
i1	1e-6	yes	current power spectral density of source 1
v2	1e-6	yes	voltage power spectral density of source 2
C	0.5	yes	normalized correlation coefficient
e	0	no	frequency exponent
c	1	no	frequency coefficient
a	0	no	additive frequency term

Am Modulated Source¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	AM modulated Source
Description	ac voltage source with amplitude modulator
Schematic entry	`AM_Mod`
Netlist entry	`V`
Type	AnalogComponent
Bitmap file	am_mod
Properties	4
Category	sources

Component Parameters¶

Default Parameters
Name	Value	Display	Description
U	1 V	yes	peak voltage in Volts
f	1 GHz	no	frequency in Hertz
Phase	0	no	initial phase in degrees
m	1.0	no	modulation level

Pm Modulated Source¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	PM modulated Source
Description	ac voltage source with phase modulator
Schematic entry	`PM_Mod`
Netlist entry	`V`
Type	AnalogComponent
Bitmap file	pm_mod
Properties	4
Category	sources

Component Parameters¶

Default Parameters
Name	Value	Display	Description
U	1 V	yes	peak voltage in Volts
f	1 GHz	no	frequency in Hertz
Phase	0	no	initial phase in degrees
M	1.0	no	modulation index

Exponential Current Pulse¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Exponential Current Pulse
Description	exponential current source
Schematic entry	`Iexp`
Netlist entry	`I`
Type	AnalogComponent
Bitmap file	iexp
Properties	6
Category	sources

Component Parameters¶

Default Parameters
Name	Value	Display	Description
I1	0	yes	current before rising edge
I2	1 A	yes	maximum current of the pulse
T1	0	yes	start time of the exponentially rising edge
T2	1 ms	yes	start of exponential decay
Tr	1 ns	no	time constant of the rising edge
Tf	1 ns	no	time constant of the falling edge

Exponential Voltage Pulse¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Exponential Voltage Pulse
Description	exponential voltage source
Schematic entry	`Vexp`
Netlist entry	`V`
Type	AnalogComponent
Bitmap file	vexp
Properties	6
Category	sources

Component Parameters¶

Default Parameters
Name	Value	Display	Description
U1	0 V	yes	voltage before rising edge
U2	1 V	yes	maximum voltage of the pulse
T1	0	yes	start time of the exponentially rising edge
T2	1 ms	yes	start of exponential decay
Tr	1 ns	no	rise time of the rising edge
Tf	1 ns	no	fall time of the falling edge

File Based Voltage Source¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	File Based Voltage Source
Description	file based voltage source
Schematic entry	`Vfile`
Netlist entry	`V`
Type	AnalogComponent
Bitmap file	vfile
Properties	5
Category	sources

Component Parameters¶

Default Parameters
Name	Value	Display	Description
File	vfile.dat	yes	name of the sample file
Interpolator	linear	no	interpolation type [hold, linear, cubic]
Repeat	no	no	repeat waveform [no, yes]
G	1	no	voltage gain
T	0	no	delay time

File Based Current Source¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	File Based Current Source
Description	file based current source
Schematic entry	`Ifile`
Netlist entry	`I`
Type	AnalogComponent
Bitmap file	ifile
Properties	5
Category	sources

Component Parameters¶

Default Parameters
Name	Value	Display	Description
File	ifile.dat	yes	name of the sample file
Interpolator	linear	no	interpolation type [hold, linear, cubic]
Repeat	no	no	repeat waveform [no, yes]
G	1	no	current gain
T	0	no	delay time

Probes¶

Current Probe¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Current Probe
Description	current probe
Schematic entry	`IProbe`
Netlist entry	`Pr`
Type	AnalogComponent
Bitmap file	iprobe
Properties	0
Category	probes

Voltage Probe¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Voltage Probe
Description	voltage probe
Schematic entry	`VProbe`
Netlist entry	`Pr`
Type	AnalogComponent
Bitmap file	vprobe
Properties	0
Category	probes

Transmission Lines¶

Transmission Line¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Transmission Line
Description	ideal transmission line
Schematic entry	`TLIN`
Netlist entry	`Line`
Type	AnalogComponent
Bitmap file	tline
Properties	4
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Z	50 Ohm	yes	characteristic impedance
L	1 mm	yes	electrical length of the line
Alpha	0 dB	no	attenuation factor per length in 1/m
Temp	26.85	no	simulation temperature in degree Celsius

4-Terminal Transmission Line¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	4-Terminal Transmission Line
Description	ideal 4-terminal transmission line
Schematic entry	`TLIN4P`
Netlist entry	`Line`
Type	AnalogComponent
Bitmap file	tline_4port
Properties	4
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Z	50 Ohm	yes	characteristic impedance
L	1 mm	yes	electrical length of the line
Alpha	0 dB	no	attenuation factor per length in 1/m
Temp	26.85	no	simulation temperature in degree Celsius

Coupled Transmission Line¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Coupled Transmission Line
Description	coupled transmission lines
Schematic entry	`CTLIN`
Netlist entry	`Line`
Type	AnalogComponent
Bitmap file	ctline
Properties	8
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Ze	50 Ohm	yes	characteristic impedance of even mode
Zo	50 Ohm	yes	characteristic impedance of odd mode
L	1 mm	yes	electrical length of the line
Ere	1	no	relative dielectric constant of even mode
Ero	1	no	relative dielectric constant of odd mode
Ae	0 dB	no	attenuation factor per length of even mode
Ao	0 dB	no	attenuation factor per length of odd mode
Temp	26.85	no	simulation temperature in degree Celsius

Twisted-Pair¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Twisted-Pair
Description	twisted pair transmission line
Schematic entry	`TWIST`
Netlist entry	`Line`
Type	AnalogComponent
Bitmap file	twistedpair
Properties	9
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Value	Display	Description
d	0.5 mm	yes	diameter of conductor
D	0.8 mm	yes	diameter of wire (conductor and insulator)
L	1.5	yes	physical length of the line
T	100	no	twists per length in 1/m
er	4	no	dielectric constant of insulator
mur	1	no	relative permeability of conductor
rho	0.022e-6	no	specific resistance of conductor
tand	4e-4	no	loss tangent
Temp	26.85	no	simulation temperature in degree Celsius

Coaxial Line¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Coaxial Line
Description	coaxial transmission line
Schematic entry	`COAX`
Netlist entry	`Line`
Type	AnalogComponent
Bitmap file	coaxial
Properties	8
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Value	Display	Description
er	2.29	yes	relative permittivity of dielectric
rho	0.022e-6	no	specific resistance of conductor
mur	1	no	relative permeability of conductor
D	2.95 mm	no	inner diameter of shield
d	0.9 mm	no	diameter of inner conductor
L	1500 mm	yes	mechanical length of the line
tand	4e-4	no	loss tangent
Temp	26.85	no	simulation temperature in degree Celsius

Rectangular Waveguide¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Rectangular Waveguide
Description	Rectangular Waveguide
Schematic entry	`RECTLINE`
Netlist entry	`Line`
Type	AnalogComponent
Bitmap file	rectline
Properties	9
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Value	Display	Description
a	2.95 mm	yes	widest side
b	0.9 mm	yes	shortest side
L	1500 mm	yes	mechanical length of the line
er	1	no	relative permittivity of dielectric
mur	1	no	relative permeability of conductor
tand	0	no	loss tangent
rho	0.022e-6	no	specific resistance of conductor
Temp	26.85	no	simulation temperature in degree Celsius
Material	unspecified	no	material parameter for temperature model [unspecified, Copper, StainlessSteel, Gold]

Rlcg Transmission Line¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	RLCG Transmission Line
Description	RLCG transmission line
Schematic entry	`RLCG`
Netlist entry	`Line`
Type	AnalogComponent
Bitmap file	rlcg
Properties	6
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Value	Display	Description
R	0.0	no	resistive load (Ohm/m)
L	0.6e-6	yes	inductive load (H/m)
C	240e-12	yes	capacitive load (F/m)
G	0.0	no	conductive load (S/m)
Length	1 mm	yes	electrical length of the line
Temp	26.85	no	simulation temperature in degree Celsius

Substrate¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Substrate
Description	substrate definition
Schematic entry	`SUBST`
Netlist entry	`Subst`
Type	AnalogComponent
Bitmap file	substrate
Properties	6
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Value	Display	Description
er	9.8	yes	relative permittivity
h	1 mm	yes	thickness in meters
t	35 um	yes	thickness of metalization
tand	2e-4	yes	loss tangent
rho	0.022e-6	yes	specific resistance of metal
D	0.15e-6	yes	rms substrate roughness

Microstrip Line¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Microstrip Line
Description	microstrip line
Schematic entry	`MLIN`
Netlist entry	`MS`
Type	AnalogComponent
Bitmap file	msline
Properties	6
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Subst	Subst1	yes	name of substrate definition
W	1 mm	yes	width of the line
L	10 mm	yes	length of the line
Model	Hammerstad	no	quasi-static microstrip model [Hammerstad, Wheeler, Schneider]
DispModel	Kirschning	no	microstrip dispersion model [Kirschning, Kobayashi, Yamashita, Hammerstad, Getsinger, Schneider, Pramanick]
Temp	26.85	no	simulation temperature in degree Celsius

Coupled Microstrip Line¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Coupled Microstrip Line
Description	coupled microstrip line
Schematic entry	`MCOUPLED`
Netlist entry	`MS`
Type	AnalogComponent
Bitmap file	mscoupled
Properties	7
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Subst	Subst1	yes	name of substrate definition
W	1 mm	yes	width of the line
L	10 mm	yes	length of the line
S	1 mm	yes	spacing between the lines
Model	Kirschning	no	microstrip model [Kirschning, Hammerstad]
DispModel	Kirschning	no	microstrip dispersion model [Kirschning, Getsinger]
Temp	26.85	no	simulation temperature in degree Celsius

Microstrip Lange Coupler¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Microstrip Lange Coupler
Description	microstrip lange coupler
Schematic entry	`MLANGE`
Netlist entry	`MS`
Type	AnalogComponent
Bitmap file	mslange
Properties	7
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Subst	Subst1	yes	name of substrate definition
W	1 mm	yes	width of the line
L	10 mm	yes	length of the line
S	1 mm	yes	spacing between the lines
Model	Kirschning	no	microstrip model [Kirschning, Hammerstad]
DispModel	Kirschning	no	microstrip dispersion model [Kirschning, Getsinger]
Temp	26.85	no	simulation temperature in degree Celsius

Microstrip Corner¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Microstrip Corner
Description	microstrip corner
Schematic entry	`MCORN`
Netlist entry	`MS`
Type	AnalogComponent
Bitmap file	mscorner
Properties	2
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Subst	Subst1	yes	substrate
W	1 mm	yes	width of line

Microstrip Mitered Bend¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Microstrip Mitered Bend
Description	microstrip mitered bend
Schematic entry	`MMBEND`
Netlist entry	`MS`
Type	AnalogComponent
Bitmap file	msmbend
Properties	2
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Subst	Subst1	yes	substrate
W	1 mm	yes	width of line

Microstrip Step¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Microstrip Step
Description	microstrip impedance step
Schematic entry	`MSTEP`
Netlist entry	`MS`
Type	AnalogComponent
Bitmap file	msstep
Properties	5
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Subst	Subst1	yes	substrate
W1	2 mm	yes	width 1 of the line
W2	1 mm	yes	width 2 of the line
MSModel	Hammerstad	no	quasi-static microstrip model [Hammerstad, Wheeler, Schneider]
MSDispModel	Kirschning	no	microstrip dispersion model [Kirschning, Kobayashi, Yamashita, Hammerstad, Getsinger, Schneider, Pramanick]

Microstrip Tee¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Microstrip Tee
Description	microstrip tee
Schematic entry	`MTEE`
Netlist entry	`MS`
Type	AnalogComponent
Bitmap file	mstee
Properties	8
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Subst	Subst1	yes	substrate
W1	1 mm	yes	width of line 1
W2	1 mm	yes	width of line 2
W3	2 mm	yes	width of line 3
MSModel	Hammerstad	no	quasi-static microstrip model [Hammerstad, Wheeler, Schneider]
MSDispModel	Kirschning	no	microstrip dispersion model [Kirschning, Kobayashi, Yamashita, Hammerstad, Getsinger, Schneider, Pramanick]
Temp	26.85	no	temperature in degree Celsius
Symbol	showNumbers	no	show port numbers in symbol or not [showNumbers, noNumbers]

Microstrip Cross¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Microstrip Cross
Description	microstrip cross
Schematic entry	`MCROSS`
Netlist entry	`MS`
Type	AnalogComponent
Bitmap file	mscross
Properties	8
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Subst	Subst1	yes	substrate
W1	1 mm	yes	width of line 1
W2	2 mm	yes	width of line 2
W3	1 mm	yes	width of line 3
W4	2 mm	yes	width of line 4
MSModel	Hammerstad	no	quasi-static microstrip model [Hammerstad, Wheeler, Schneider]
MSDispModel	Kirschning	no	microstrip dispersion model [Kirschning, Kobayashi, Yamashita, Hammerstad, Getsinger, Schneider, Pramanick]
Symbol	showNumbers	no	show port numbers in symbol or not [showNumbers, noNumbers]

Microstrip Open¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Microstrip Open
Description	microstrip open
Schematic entry	`MOPEN`
Netlist entry	`MS`
Type	AnalogComponent
Bitmap file	msopen
Properties	5
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Subst	Subst1	yes	name of substrate definition
W	1 mm	yes	width of the line
MSModel	Hammerstad	no	quasi-static microstrip model [Hammerstad, Wheeler, Schneider]
MSDispModel	Kirschning	no	microstrip dispersion model [Kirschning, Kobayashi, Yamashita, Hammerstad, Getsinger, Schneider, Pramanick]
Model	Kirschning	no	microstrip open end model [Kirschning, Hammerstad, Alexopoulos]

Microstrip Gap¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Microstrip Gap
Description	microstrip gap
Schematic entry	`MGAP`
Netlist entry	`MS`
Type	AnalogComponent
Bitmap file	msgap
Properties	6
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Subst	Subst1	yes	name of substrate definition
W1	1 mm	yes	width of the line 1
W2	1 mm	yes	width of the line 2
S	1 mm	yes	spacing between the microstrip ends
MSModel	Hammerstad	no	quasi-static microstrip model [Hammerstad, Wheeler, Schneider]
MSDispModel	Kirschning	no	microstrip dispersion model [Kirschning, Kobayashi, Yamashita, Hammerstad, Getsinger, Schneider, Pramanick]

Microstrip Via¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Microstrip Via
Description	microstrip via
Schematic entry	`MVIA`
Netlist entry	`MS`
Type	AnalogComponent
Bitmap file	msvia
Properties	3
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Subst	Subst1	yes	substrate
D	1 mm	yes	diameter of round via conductor
Temp	26.85	no	simulation temperature in degree Celsius

Microstrip Radial Stub¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Microstrip Radial Stub
Description	microstrip radial stub
Schematic entry	`MRSTUB`
Netlist entry	`MS`
Type	AnalogComponent
Bitmap file	msrstub
Properties	4
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Subst	Subst1	yes	name of substrate definition
ri	1 mm	no	inner radius
ro	10 mm	yes	outer radius
alpha	90	yes	stub angle (degrees)

Coplanar Line¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Coplanar Line
Description	coplanar line
Schematic entry	`CLIN`
Netlist entry	`CL`
Type	AnalogComponent
Bitmap file	coplanar
Properties	6
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Subst	Subst1	yes	name of substrate definition
W	1 mm	yes	width of the line
S	1 mm	yes	width of a gap
L	10 mm	yes	length of the line
Backside	Air	no	material at the backside of the substrate [Metal, Air]
Approx	yes	no	use approximation instead of precise equation [yes, no]

Coplanar Open¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Coplanar Open
Description	coplanar open
Schematic entry	`COPEN`
Netlist entry	`CL`
Type	AnalogComponent
Bitmap file	cpwopen
Properties	5
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Subst	Subst1	yes	name of substrate definition
W	1 mm	yes	width of the line
S	1 mm	yes	width of a gap
G	5 mm	yes	width of gap at end of line
Backside	Air	no	material at the backside of the substrate [Metal, Air]

Coplanar Short¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Coplanar Short
Description	coplanar short
Schematic entry	`CSHORT`
Netlist entry	`CL`
Type	AnalogComponent
Bitmap file	cpwshort
Properties	4
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Subst	Subst1	yes	name of substrate definition
W	1 mm	yes	width of the line
S	1 mm	yes	width of a gap
Backside	Air	no	material at the backside of the substrate [Metal, Air]

Coplanar Gap¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Coplanar Gap
Description	coplanar gap
Schematic entry	`CGAP`
Netlist entry	`CL`
Type	AnalogComponent
Bitmap file	cpwgap
Properties	4
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Subst	Subst1	yes	name of substrate definition
W	1 mm	yes	width of the line
S	1 mm	yes	width of a gap
G	0.5 mm	yes	width of gap between the two lines

Coplanar Step¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Coplanar Step
Description	coplanar step
Schematic entry	`CSTEP`
Netlist entry	`CL`
Type	AnalogComponent
Bitmap file	cpwstep
Properties	5
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Subst	Subst1	yes	name of substrate definition
W1	1 mm	yes	width of line 1
W2	2 mm	yes	width of line 2
S	3 mm	yes	distance between ground planes
Backside	Air	no	material at the backside of the substrate [Metal, Air]

Bond Wire¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Bond Wire
Description	bond wire
Schematic entry	`BOND`
Netlist entry	`Line`
Type	AnalogComponent
Bitmap file	bondwire
Properties	8
Category	transmission lines

Component Parameters¶

Default Parameters
Name	Value	Display	Description
L	3 mm	yes	length of the wire
D	50 um	yes	diameter of the wire
H	2 mm	yes	height above ground plane
rho	0.022e-6	no	specific resistance of the metal
mur	1	no	relative permeability of the metal
Model	FREESPACE	no	bond wire model [FREESPACE, MIRROR, DESCHARLES]
Subst	Subst1	yes	substrate
Temp	26.85	no	simulation temperature in degree Celsius

Nonlinear Components¶

Diode¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Diode
Description	diode
Schematic entry	`Diode`
Netlist entry	`D`
Type	AnalogComponent
Bitmap file	diode
Properties	29
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Is	1e-15 A	yes	saturation current
N	1	yes	emission coefficient
Cj0	10 fF	yes	zero-bias junction capacitance
M	0.5	no	grading coefficient
Vj	0.7 V	no	junction potential
Fc	0.5	no	forward-bias depletion capacitance coefficient
Cp	0.0 fF	no	linear capacitance
Isr	0.0	no	recombination current parameter
Nr	2.0	no	emission coefficient for Isr
Rs	0.0 Ohm	no	ohmic series resistance
Tt	0.0 ps	no	transit time
Ikf	0	no	high-injection knee current (0=infinity)
Kf	0.0	no	flicker noise coefficient
Af	1.0	no	flicker noise exponent
Ffe	1.0	no	flicker noise frequency exponent
Bv	0	no	reverse breakdown voltage
Ibv	1 mA	no	current at reverse breakdown voltage
Temp	26.85	no	simulation temperature in degree Celsius
Xti	3.0	no	saturation current temperature exponent
Eg	1.11	no	energy bandgap in eV
Tbv	0.0	no	Bv linear temperature coefficient
Trs	0.0	no	Rs linear temperature coefficient
Ttt1	0.0	no	Tt linear temperature coefficient
Ttt2	0.0	no	Tt quadratic temperature coefficient
Tm1	0.0	no	M linear temperature coefficient
Tm2	0.0	no	M quadratic temperature coefficient
Tnom	26.85	no	temperature at which parameters were extracted
Area	1.0	no	default area for diode
Symbol	normal	no	schematic symbol [normal, US, Schottky, Zener, Varactor]

Npn Transistor¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	npn transistor
Description	bipolar junction transistor
Schematic entry	`_BJT`
Netlist entry	`T`
Type	AnalogComponent
Bitmap file	npn
Properties	48
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Type	npn	yes	polarity [npn, pnp]
Is	1e-16	yes	saturation current
Nf	1	yes	forward emission coefficient
Nr	1	no	reverse emission coefficient
Ikf	0	no	high current corner for forward beta
Ikr	0	no	high current corner for reverse beta
Vaf	0	yes	forward early voltage
Var	0	no	reverse early voltage
Ise	0	no	base-emitter leakage saturation current
Ne	1.5	no	base-emitter leakage emission coefficient
Isc	0	no	base-collector leakage saturation current
Nc	2	no	base-collector leakage emission coefficient
Bf	100	yes	forward beta
Br	1	no	reverse beta
Rbm	0	no	minimum base resistance for high currents
Irb	0	no	current for base resistance midpoint
Rc	0	no	collector ohmic resistance
Re	0	no	emitter ohmic resistance
Rb	0	no	zero-bias base resistance (may be high-current dependent)
Cje	0	no	base-emitter zero-bias depletion capacitance
Vje	0.75	no	base-emitter junction built-in potential
Mje	0.33	no	base-emitter junction exponential factor
Cjc	0	no	base-collector zero-bias depletion capacitance
Vjc	0.75	no	base-collector junction built-in potential
Mjc	0.33	no	base-collector junction exponential factor
Xcjc	1.0	no	fraction of Cjc that goes to internal base pin
Cjs	0	no	zero-bias collector-substrate capacitance
Vjs	0.75	no	substrate junction built-in potential
Mjs	0	no	substrate junction exponential factor
Fc	0.5	no	forward-bias depletion capacitance coefficient
Tf	0.0	no	ideal forward transit time
Xtf	0.0	no	coefficient of bias-dependence for Tf
Vtf	0.0	no	voltage dependence of Tf on base-collector voltage
Itf	0.0	no	high-current effect on Tf
Tr	0.0	no	ideal reverse transit time
Temp	26.85	no	simulation temperature in degree Celsius
Kf	0.0	no	flicker noise coefficient
Af	1.0	no	flicker noise exponent
Ffe	1.0	no	flicker noise frequency exponent
Kb	0.0	no	burst noise coefficient
Ab	1.0	no	burst noise exponent
Fb	1.0	no	burst noise corner frequency in Hertz
Ptf	0.0	no	excess phase in degrees
Xtb	0.0	no	temperature exponent for forward- and reverse beta
Xti	3.0	no	saturation current temperature exponent
Eg	1.11	no	energy bandgap in eV
Tnom	26.85	no	temperature at which parameters were extracted
Area	1.0	no	default area for bipolar transistor

Pnp Transistor¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	pnp transistor
Description	bipolar junction transistor
Schematic entry	`_BJT`
Netlist entry	`T`
Type	AnalogComponent
Bitmap file	pnp
Properties	48
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Type	pnp	yes	polarity [npn, pnp]
Is	1e-16	yes	saturation current
Nf	1	yes	forward emission coefficient
Nr	1	no	reverse emission coefficient
Ikf	0	no	high current corner for forward beta
Ikr	0	no	high current corner for reverse beta
Vaf	0	yes	forward early voltage
Var	0	no	reverse early voltage
Ise	0	no	base-emitter leakage saturation current
Ne	1.5	no	base-emitter leakage emission coefficient
Isc	0	no	base-collector leakage saturation current
Nc	2	no	base-collector leakage emission coefficient
Bf	100	yes	forward beta
Br	1	no	reverse beta
Rbm	0	no	minimum base resistance for high currents
Irb	0	no	current for base resistance midpoint
Rc	0	no	collector ohmic resistance
Re	0	no	emitter ohmic resistance
Rb	0	no	zero-bias base resistance (may be high-current dependent)
Cje	0	no	base-emitter zero-bias depletion capacitance
Vje	0.75	no	base-emitter junction built-in potential
Mje	0.33	no	base-emitter junction exponential factor
Cjc	0	no	base-collector zero-bias depletion capacitance
Vjc	0.75	no	base-collector junction built-in potential
Mjc	0.33	no	base-collector junction exponential factor
Xcjc	1.0	no	fraction of Cjc that goes to internal base pin
Cjs	0	no	zero-bias collector-substrate capacitance
Vjs	0.75	no	substrate junction built-in potential
Mjs	0	no	substrate junction exponential factor
Fc	0.5	no	forward-bias depletion capacitance coefficient
Tf	0.0	no	ideal forward transit time
Xtf	0.0	no	coefficient of bias-dependence for Tf
Vtf	0.0	no	voltage dependence of Tf on base-collector voltage
Itf	0.0	no	high-current effect on Tf
Tr	0.0	no	ideal reverse transit time
Temp	26.85	no	simulation temperature in degree Celsius
Kf	0.0	no	flicker noise coefficient
Af	1.0	no	flicker noise exponent
Ffe	1.0	no	flicker noise frequency exponent
Kb	0.0	no	burst noise coefficient
Ab	1.0	no	burst noise exponent
Fb	1.0	no	burst noise corner frequency in Hertz
Ptf	0.0	no	excess phase in degrees
Xtb	0.0	no	temperature exponent for forward- and reverse beta
Xti	3.0	no	saturation current temperature exponent
Eg	1.11	no	energy bandgap in eV
Tnom	26.85	no	temperature at which parameters were extracted
Area	1.0	no	default area for bipolar transistor

Npn Transistor¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	npn transistor
Description	bipolar junction transistor with substrate
Schematic entry	`BJT`
Netlist entry	`T`
Type	AnalogComponent
Bitmap file	npnsub
Properties	48
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Type	npn	yes	polarity [npn, pnp]
Is	1e-16	yes	saturation current
Nf	1	yes	forward emission coefficient
Nr	1	no	reverse emission coefficient
Ikf	0	no	high current corner for forward beta
Ikr	0	no	high current corner for reverse beta
Vaf	0	yes	forward early voltage
Var	0	no	reverse early voltage
Ise	0	no	base-emitter leakage saturation current
Ne	1.5	no	base-emitter leakage emission coefficient
Isc	0	no	base-collector leakage saturation current
Nc	2	no	base-collector leakage emission coefficient
Bf	100	yes	forward beta
Br	1	no	reverse beta
Rbm	0	no	minimum base resistance for high currents
Irb	0	no	current for base resistance midpoint
Rc	0	no	collector ohmic resistance
Re	0	no	emitter ohmic resistance
Rb	0	no	zero-bias base resistance (may be high-current dependent)
Cje	0	no	base-emitter zero-bias depletion capacitance
Vje	0.75	no	base-emitter junction built-in potential
Mje	0.33	no	base-emitter junction exponential factor
Cjc	0	no	base-collector zero-bias depletion capacitance
Vjc	0.75	no	base-collector junction built-in potential
Mjc	0.33	no	base-collector junction exponential factor
Xcjc	1.0	no	fraction of Cjc that goes to internal base pin
Cjs	0	no	zero-bias collector-substrate capacitance
Vjs	0.75	no	substrate junction built-in potential
Mjs	0	no	substrate junction exponential factor
Fc	0.5	no	forward-bias depletion capacitance coefficient
Tf	0.0	no	ideal forward transit time
Xtf	0.0	no	coefficient of bias-dependence for Tf
Vtf	0.0	no	voltage dependence of Tf on base-collector voltage
Itf	0.0	no	high-current effect on Tf
Tr	0.0	no	ideal reverse transit time
Temp	26.85	no	simulation temperature in degree Celsius
Kf	0.0	no	flicker noise coefficient
Af	1.0	no	flicker noise exponent
Ffe	1.0	no	flicker noise frequency exponent
Kb	0.0	no	burst noise coefficient
Ab	1.0	no	burst noise exponent
Fb	1.0	no	burst noise corner frequency in Hertz
Ptf	0.0	no	excess phase in degrees
Xtb	0.0	no	temperature exponent for forward- and reverse beta
Xti	3.0	no	saturation current temperature exponent
Eg	1.11	no	energy bandgap in eV
Tnom	26.85	no	temperature at which parameters were extracted
Area	1.0	no	default area for bipolar transistor

Pnp Transistor¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	pnp transistor
Description	bipolar junction transistor with substrate
Schematic entry	`BJT`
Netlist entry	`T`
Type	AnalogComponent
Bitmap file	pnpsub
Properties	48
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Type	pnp	yes	polarity [npn, pnp]
Is	1e-16	yes	saturation current
Nf	1	yes	forward emission coefficient
Nr	1	no	reverse emission coefficient
Ikf	0	no	high current corner for forward beta
Ikr	0	no	high current corner for reverse beta
Vaf	0	yes	forward early voltage
Var	0	no	reverse early voltage
Ise	0	no	base-emitter leakage saturation current
Ne	1.5	no	base-emitter leakage emission coefficient
Isc	0	no	base-collector leakage saturation current
Nc	2	no	base-collector leakage emission coefficient
Bf	100	yes	forward beta
Br	1	no	reverse beta
Rbm	0	no	minimum base resistance for high currents
Irb	0	no	current for base resistance midpoint
Rc	0	no	collector ohmic resistance
Re	0	no	emitter ohmic resistance
Rb	0	no	zero-bias base resistance (may be high-current dependent)
Cje	0	no	base-emitter zero-bias depletion capacitance
Vje	0.75	no	base-emitter junction built-in potential
Mje	0.33	no	base-emitter junction exponential factor
Cjc	0	no	base-collector zero-bias depletion capacitance
Vjc	0.75	no	base-collector junction built-in potential
Mjc	0.33	no	base-collector junction exponential factor
Xcjc	1.0	no	fraction of Cjc that goes to internal base pin
Cjs	0	no	zero-bias collector-substrate capacitance
Vjs	0.75	no	substrate junction built-in potential
Mjs	0	no	substrate junction exponential factor
Fc	0.5	no	forward-bias depletion capacitance coefficient
Tf	0.0	no	ideal forward transit time
Xtf	0.0	no	coefficient of bias-dependence for Tf
Vtf	0.0	no	voltage dependence of Tf on base-collector voltage
Itf	0.0	no	high-current effect on Tf
Tr	0.0	no	ideal reverse transit time
Temp	26.85	no	simulation temperature in degree Celsius
Kf	0.0	no	flicker noise coefficient
Af	1.0	no	flicker noise exponent
Ffe	1.0	no	flicker noise frequency exponent
Kb	0.0	no	burst noise coefficient
Ab	1.0	no	burst noise exponent
Fb	1.0	no	burst noise corner frequency in Hertz
Ptf	0.0	no	excess phase in degrees
Xtb	0.0	no	temperature exponent for forward- and reverse beta
Xti	3.0	no	saturation current temperature exponent
Eg	1.11	no	energy bandgap in eV
Tnom	26.85	no	temperature at which parameters were extracted
Area	1.0	no	default area for bipolar transistor

N-Jfet¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	n-JFET
Description	junction field-effect transistor
Schematic entry	`JFET`
Netlist entry	`T`
Type	AnalogComponent
Bitmap file	nfet
Properties	24
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Type	nfet	yes	polarity [nfet, pfet]
Vt0	-2.0 V	yes	threshold voltage
Beta	1e-4	yes	transconductance parameter
Lambda	0.0	yes	channel-length modulation parameter
Rd	0.0	no	parasitic drain resistance
Rs	0.0	no	parasitic source resistance
Is	1e-14	no	gate-junction saturation current
N	1.0	no	gate-junction emission coefficient
Isr	1e-14	no	gate-junction recombination current parameter
Nr	2.0	no	Isr emission coefficient
Cgs	0.0	no	zero-bias gate-source junction capacitance
Cgd	0.0	no	zero-bias gate-drain junction capacitance
Pb	1.0	no	gate-junction potential
Fc	0.5	no	forward-bias junction capacitance coefficient
M	0.5	no	gate P-N grading coefficient
Kf	0.0	no	flicker noise coefficient
Af	1.0	no	flicker noise exponent
Ffe	1.0	no	flicker noise frequency exponent
Temp	26.85	no	simulation temperature in degree Celsius
Xti	3.0	no	saturation current temperature exponent
Vt0tc	0.0	no	Vt0 temperature coefficient
Betatce	0.0	no	Beta exponential temperature coefficient
Tnom	26.85	no	temperature at which parameters were extracted
Area	1.0	no	default area for JFET

P-Jfet¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	p-JFET
Description	junction field-effect transistor
Schematic entry	`JFET`
Netlist entry	`T`
Type	AnalogComponent
Bitmap file	pfet
Properties	24
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Type	pfet	yes	polarity [nfet, pfet]
Vt0	-2.0 V	yes	threshold voltage
Beta	1e-4	yes	transconductance parameter
Lambda	0.0	yes	channel-length modulation parameter
Rd	0.0	no	parasitic drain resistance
Rs	0.0	no	parasitic source resistance
Is	1e-14	no	gate-junction saturation current
N	1.0	no	gate-junction emission coefficient
Isr	1e-14	no	gate-junction recombination current parameter
Nr	2.0	no	Isr emission coefficient
Cgs	0.0	no	zero-bias gate-source junction capacitance
Cgd	0.0	no	zero-bias gate-drain junction capacitance
Pb	1.0	no	gate-junction potential
Fc	0.5	no	forward-bias junction capacitance coefficient
M	0.5	no	gate P-N grading coefficient
Kf	0.0	no	flicker noise coefficient
Af	1.0	no	flicker noise exponent
Ffe	1.0	no	flicker noise frequency exponent
Temp	26.85	no	simulation temperature in degree Celsius
Xti	3.0	no	saturation current temperature exponent
Vt0tc	0.0	no	Vt0 temperature coefficient
Betatce	0.0	no	Beta exponential temperature coefficient
Tnom	26.85	no	temperature at which parameters were extracted
Area	1.0	no	default area for JFET

N-Mosfet¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	n-MOSFET
Description	MOS field-effect transistor
Schematic entry	`_MOSFET`
Netlist entry	`T`
Type	AnalogComponent
Bitmap file	nmosfet
Properties	44
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Type	nfet	no	polarity [nfet, pfet]
Vt0	1.0 V	yes	zero-bias threshold voltage
Kp	2e-5	yes	transconductance coefficient in A/V^2
Gamma	0.0	no	bulk threshold in sqrt(V)
Phi	0.6 V	no	surface potential
Lambda	0.0	yes	channel-length modulation parameter in 1/V
Rd	0.0 Ohm	no	drain ohmic resistance
Rs	0.0 Ohm	no	source ohmic resistance
Rg	0.0 Ohm	no	gate ohmic resistance
Is	1e-14 A	no	bulk junction saturation current
N	1.0	no	bulk junction emission coefficient
W	1 um	no	channel width
L	1 um	no	channel length
Ld	0.0	no	lateral diffusion length
Tox	0.1 um	no	oxide thickness
Cgso	0.0	no	gate-source overlap capacitance per meter of channel width in F/m
Cgdo	0.0	no	gate-drain overlap capacitance per meter of channel width in F/m
Cgbo	0.0	no	gate-bulk overlap capacitance per meter of channel length in F/m
Cbd	0.0 F	no	zero-bias bulk-drain junction capacitance
Cbs	0.0 F	no	zero-bias bulk-source junction capacitance
Pb	0.8 V	no	bulk junction potential
Mj	0.5	no	bulk junction bottom grading coefficient
Fc	0.5	no	bulk junction forward-bias depletion capacitance coefficient
Cjsw	0.0	no	zero-bias bulk junction periphery capacitance per meter of junction perimeter in F/m
Mjsw	0.33	no	bulk junction periphery grading coefficient
Tt	0.0 ps	no	bulk transit time
Nsub	0.0	no	substrate bulk doping density in 1/cm^3
Nss	0.0	no	surface state density in 1/cm^2
Tpg	1	no	gate material type: 0 = alumina; -1 = same as bulk; 1 = opposite to bulk
Uo	600.0	no	surface mobility in cm^2/Vs
Rsh	0.0	no	drain and source diffusion sheet resistance in Ohms/square
Nrd	1	no	number of equivalent drain squares
Nrs	1	no	number of equivalent source squares
Cj	0.0	no	zero-bias bulk junction bottom capacitance per square meter of junction area in F/m^2
Js	0.0	no	bulk junction saturation current per square meter of junction area in A/m^2
Ad	0.0	no	drain diffusion area in m^2
As	0.0	no	source diffusion area in m^2
Pd	0.0 m	no	drain junction perimeter
Ps	0.0 m	no	source junction perimeter
Kf	0.0	no	flicker noise coefficient
Af	1.0	no	flicker noise exponent
Ffe	1.0	no	flicker noise frequency exponent
Temp	26.85	no	simulation temperature in degree Celsius
Tnom	26.85	no	parameter measurement temperature

P-Mosfet¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	p-MOSFET
Description	MOS field-effect transistor
Schematic entry	`_MOSFET`
Netlist entry	`T`
Type	AnalogComponent
Bitmap file	pmosfet
Properties	44
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Type	pfet	no	polarity [nfet, pfet]
Vt0	-1.0 V	yes	zero-bias threshold voltage
Kp	2e-5	yes	transconductance coefficient in A/V^2
Gamma	0.0	no	bulk threshold in sqrt(V)
Phi	0.6 V	no	surface potential
Lambda	0.0	yes	channel-length modulation parameter in 1/V
Rd	0.0 Ohm	no	drain ohmic resistance
Rs	0.0 Ohm	no	source ohmic resistance
Rg	0.0 Ohm	no	gate ohmic resistance
Is	1e-14 A	no	bulk junction saturation current
N	1.0	no	bulk junction emission coefficient
W	1 um	no	channel width
L	1 um	no	channel length
Ld	0.0	no	lateral diffusion length
Tox	0.1 um	no	oxide thickness
Cgso	0.0	no	gate-source overlap capacitance per meter of channel width in F/m
Cgdo	0.0	no	gate-drain overlap capacitance per meter of channel width in F/m
Cgbo	0.0	no	gate-bulk overlap capacitance per meter of channel length in F/m
Cbd	0.0 F	no	zero-bias bulk-drain junction capacitance
Cbs	0.0 F	no	zero-bias bulk-source junction capacitance
Pb	0.8 V	no	bulk junction potential
Mj	0.5	no	bulk junction bottom grading coefficient
Fc	0.5	no	bulk junction forward-bias depletion capacitance coefficient
Cjsw	0.0	no	zero-bias bulk junction periphery capacitance per meter of junction perimeter in F/m
Mjsw	0.33	no	bulk junction periphery grading coefficient
Tt	0.0 ps	no	bulk transit time
Nsub	0.0	no	substrate bulk doping density in 1/cm^3
Nss	0.0	no	surface state density in 1/cm^2
Tpg	1	no	gate material type: 0 = alumina; -1 = same as bulk; 1 = opposite to bulk
Uo	600.0	no	surface mobility in cm^2/Vs
Rsh	0.0	no	drain and source diffusion sheet resistance in Ohms/square
Nrd	1	no	number of equivalent drain squares
Nrs	1	no	number of equivalent source squares
Cj	0.0	no	zero-bias bulk junction bottom capacitance per square meter of junction area in F/m^2
Js	0.0	no	bulk junction saturation current per square meter of junction area in A/m^2
Ad	0.0	no	drain diffusion area in m^2
As	0.0	no	source diffusion area in m^2
Pd	0.0 m	no	drain junction perimeter
Ps	0.0 m	no	source junction perimeter
Kf	0.0	no	flicker noise coefficient
Af	1.0	no	flicker noise exponent
Ffe	1.0	no	flicker noise frequency exponent
Temp	26.85	no	simulation temperature in degree Celsius
Tnom	26.85	no	parameter measurement temperature

Depletion Mosfet¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	depletion MOSFET
Description	MOS field-effect transistor
Schematic entry	`_MOSFET`
Netlist entry	`T`
Type	AnalogComponent
Bitmap file	dmosfet
Properties	44
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Type	nfet	no	polarity [nfet, pfet]
Vt0	-1.0 V	yes	zero-bias threshold voltage
Kp	2e-5	yes	transconductance coefficient in A/V^2
Gamma	0.0	no	bulk threshold in sqrt(V)
Phi	0.6 V	no	surface potential
Lambda	0.0	yes	channel-length modulation parameter in 1/V
Rd	0.0 Ohm	no	drain ohmic resistance
Rs	0.0 Ohm	no	source ohmic resistance
Rg	0.0 Ohm	no	gate ohmic resistance
Is	1e-14 A	no	bulk junction saturation current
N	1.0	no	bulk junction emission coefficient
W	1 um	no	channel width
L	1 um	no	channel length
Ld	0.0	no	lateral diffusion length
Tox	0.1 um	no	oxide thickness
Cgso	0.0	no	gate-source overlap capacitance per meter of channel width in F/m
Cgdo	0.0	no	gate-drain overlap capacitance per meter of channel width in F/m
Cgbo	0.0	no	gate-bulk overlap capacitance per meter of channel length in F/m
Cbd	0.0 F	no	zero-bias bulk-drain junction capacitance
Cbs	0.0 F	no	zero-bias bulk-source junction capacitance
Pb	0.8 V	no	bulk junction potential
Mj	0.5	no	bulk junction bottom grading coefficient
Fc	0.5	no	bulk junction forward-bias depletion capacitance coefficient
Cjsw	0.0	no	zero-bias bulk junction periphery capacitance per meter of junction perimeter in F/m
Mjsw	0.33	no	bulk junction periphery grading coefficient
Tt	0.0 ps	no	bulk transit time
Nsub	0.0	no	substrate bulk doping density in 1/cm^3
Nss	0.0	no	surface state density in 1/cm^2
Tpg	1	no	gate material type: 0 = alumina; -1 = same as bulk; 1 = opposite to bulk
Uo	600.0	no	surface mobility in cm^2/Vs
Rsh	0.0	no	drain and source diffusion sheet resistance in Ohms/square
Nrd	1	no	number of equivalent drain squares
Nrs	1	no	number of equivalent source squares
Cj	0.0	no	zero-bias bulk junction bottom capacitance per square meter of junction area in F/m^2
Js	0.0	no	bulk junction saturation current per square meter of junction area in A/m^2
Ad	0.0	no	drain diffusion area in m^2
As	0.0	no	source diffusion area in m^2
Pd	0.0 m	no	drain junction perimeter
Ps	0.0 m	no	source junction perimeter
Kf	0.0	no	flicker noise coefficient
Af	1.0	no	flicker noise exponent
Ffe	1.0	no	flicker noise frequency exponent
Temp	26.85	no	simulation temperature in degree Celsius
Tnom	26.85	no	parameter measurement temperature

N-Mosfet¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	n-MOSFET
Description	MOS field-effect transistor with substrate
Schematic entry	`MOSFET`
Netlist entry	`T`
Type	AnalogComponent
Bitmap file	nmosfet_sub
Properties	44
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Type	nfet	no	polarity [nfet, pfet]
Vt0	1.0 V	yes	zero-bias threshold voltage
Kp	2e-5	yes	transconductance coefficient in A/V^2
Gamma	0.0	no	bulk threshold in sqrt(V)
Phi	0.6 V	no	surface potential
Lambda	0.0	yes	channel-length modulation parameter in 1/V
Rd	0.0 Ohm	no	drain ohmic resistance
Rs	0.0 Ohm	no	source ohmic resistance
Rg	0.0 Ohm	no	gate ohmic resistance
Is	1e-14 A	no	bulk junction saturation current
N	1.0	no	bulk junction emission coefficient
W	1 um	no	channel width
L	1 um	no	channel length
Ld	0.0	no	lateral diffusion length
Tox	0.1 um	no	oxide thickness
Cgso	0.0	no	gate-source overlap capacitance per meter of channel width in F/m
Cgdo	0.0	no	gate-drain overlap capacitance per meter of channel width in F/m
Cgbo	0.0	no	gate-bulk overlap capacitance per meter of channel length in F/m
Cbd	0.0 F	no	zero-bias bulk-drain junction capacitance
Cbs	0.0 F	no	zero-bias bulk-source junction capacitance
Pb	0.8 V	no	bulk junction potential
Mj	0.5	no	bulk junction bottom grading coefficient
Fc	0.5	no	bulk junction forward-bias depletion capacitance coefficient
Cjsw	0.0	no	zero-bias bulk junction periphery capacitance per meter of junction perimeter in F/m
Mjsw	0.33	no	bulk junction periphery grading coefficient
Tt	0.0 ps	no	bulk transit time
Nsub	0.0	no	substrate bulk doping density in 1/cm^3
Nss	0.0	no	surface state density in 1/cm^2
Tpg	1	no	gate material type: 0 = alumina; -1 = same as bulk; 1 = opposite to bulk
Uo	600.0	no	surface mobility in cm^2/Vs
Rsh	0.0	no	drain and source diffusion sheet resistance in Ohms/square
Nrd	1	no	number of equivalent drain squares
Nrs	1	no	number of equivalent source squares
Cj	0.0	no	zero-bias bulk junction bottom capacitance per square meter of junction area in F/m^2
Js	0.0	no	bulk junction saturation current per square meter of junction area in A/m^2
Ad	0.0	no	drain diffusion area in m^2
As	0.0	no	source diffusion area in m^2
Pd	0.0 m	no	drain junction perimeter
Ps	0.0 m	no	source junction perimeter
Kf	0.0	no	flicker noise coefficient
Af	1.0	no	flicker noise exponent
Ffe	1.0	no	flicker noise frequency exponent
Temp	26.85	no	simulation temperature in degree Celsius
Tnom	26.85	no	parameter measurement temperature

P-Mosfet¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	p-MOSFET
Description	MOS field-effect transistor with substrate
Schematic entry	`MOSFET`
Netlist entry	`T`
Type	AnalogComponent
Bitmap file	pmosfet_sub
Properties	44
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Type	pfet	no	polarity [nfet, pfet]
Vt0	-1.0 V	yes	zero-bias threshold voltage
Kp	2e-5	yes	transconductance coefficient in A/V^2
Gamma	0.0	no	bulk threshold in sqrt(V)
Phi	0.6 V	no	surface potential
Lambda	0.0	yes	channel-length modulation parameter in 1/V
Rd	0.0 Ohm	no	drain ohmic resistance
Rs	0.0 Ohm	no	source ohmic resistance
Rg	0.0 Ohm	no	gate ohmic resistance
Is	1e-14 A	no	bulk junction saturation current
N	1.0	no	bulk junction emission coefficient
W	1 um	no	channel width
L	1 um	no	channel length
Ld	0.0	no	lateral diffusion length
Tox	0.1 um	no	oxide thickness
Cgso	0.0	no	gate-source overlap capacitance per meter of channel width in F/m
Cgdo	0.0	no	gate-drain overlap capacitance per meter of channel width in F/m
Cgbo	0.0	no	gate-bulk overlap capacitance per meter of channel length in F/m
Cbd	0.0 F	no	zero-bias bulk-drain junction capacitance
Cbs	0.0 F	no	zero-bias bulk-source junction capacitance
Pb	0.8 V	no	bulk junction potential
Mj	0.5	no	bulk junction bottom grading coefficient
Fc	0.5	no	bulk junction forward-bias depletion capacitance coefficient
Cjsw	0.0	no	zero-bias bulk junction periphery capacitance per meter of junction perimeter in F/m
Mjsw	0.33	no	bulk junction periphery grading coefficient
Tt	0.0 ps	no	bulk transit time
Nsub	0.0	no	substrate bulk doping density in 1/cm^3
Nss	0.0	no	surface state density in 1/cm^2
Tpg	1	no	gate material type: 0 = alumina; -1 = same as bulk; 1 = opposite to bulk
Uo	600.0	no	surface mobility in cm^2/Vs
Rsh	0.0	no	drain and source diffusion sheet resistance in Ohms/square
Nrd	1	no	number of equivalent drain squares
Nrs	1	no	number of equivalent source squares
Cj	0.0	no	zero-bias bulk junction bottom capacitance per square meter of junction area in F/m^2
Js	0.0	no	bulk junction saturation current per square meter of junction area in A/m^2
Ad	0.0	no	drain diffusion area in m^2
As	0.0	no	source diffusion area in m^2
Pd	0.0 m	no	drain junction perimeter
Ps	0.0 m	no	source junction perimeter
Kf	0.0	no	flicker noise coefficient
Af	1.0	no	flicker noise exponent
Ffe	1.0	no	flicker noise frequency exponent
Temp	26.85	no	simulation temperature in degree Celsius
Tnom	26.85	no	parameter measurement temperature

Depletion Mosfet¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	depletion MOSFET
Description	MOS field-effect transistor with substrate
Schematic entry	`MOSFET`
Netlist entry	`T`
Type	AnalogComponent
Bitmap file	dmosfet_sub
Properties	44
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Type	nfet	no	polarity [nfet, pfet]
Vt0	-1.0 V	yes	zero-bias threshold voltage
Kp	2e-5	yes	transconductance coefficient in A/V^2
Gamma	0.0	no	bulk threshold in sqrt(V)
Phi	0.6 V	no	surface potential
Lambda	0.0	yes	channel-length modulation parameter in 1/V
Rd	0.0 Ohm	no	drain ohmic resistance
Rs	0.0 Ohm	no	source ohmic resistance
Rg	0.0 Ohm	no	gate ohmic resistance
Is	1e-14 A	no	bulk junction saturation current
N	1.0	no	bulk junction emission coefficient
W	1 um	no	channel width
L	1 um	no	channel length
Ld	0.0	no	lateral diffusion length
Tox	0.1 um	no	oxide thickness
Cgso	0.0	no	gate-source overlap capacitance per meter of channel width in F/m
Cgdo	0.0	no	gate-drain overlap capacitance per meter of channel width in F/m
Cgbo	0.0	no	gate-bulk overlap capacitance per meter of channel length in F/m
Cbd	0.0 F	no	zero-bias bulk-drain junction capacitance
Cbs	0.0 F	no	zero-bias bulk-source junction capacitance
Pb	0.8 V	no	bulk junction potential
Mj	0.5	no	bulk junction bottom grading coefficient
Fc	0.5	no	bulk junction forward-bias depletion capacitance coefficient
Cjsw	0.0	no	zero-bias bulk junction periphery capacitance per meter of junction perimeter in F/m
Mjsw	0.33	no	bulk junction periphery grading coefficient
Tt	0.0 ps	no	bulk transit time
Nsub	0.0	no	substrate bulk doping density in 1/cm^3
Nss	0.0	no	surface state density in 1/cm^2
Tpg	1	no	gate material type: 0 = alumina; -1 = same as bulk; 1 = opposite to bulk
Uo	600.0	no	surface mobility in cm^2/Vs
Rsh	0.0	no	drain and source diffusion sheet resistance in Ohms/square
Nrd	1	no	number of equivalent drain squares
Nrs	1	no	number of equivalent source squares
Cj	0.0	no	zero-bias bulk junction bottom capacitance per square meter of junction area in F/m^2
Js	0.0	no	bulk junction saturation current per square meter of junction area in A/m^2
Ad	0.0	no	drain diffusion area in m^2
As	0.0	no	source diffusion area in m^2
Pd	0.0 m	no	drain junction perimeter
Ps	0.0 m	no	source junction perimeter
Kf	0.0	no	flicker noise coefficient
Af	1.0	no	flicker noise exponent
Ffe	1.0	no	flicker noise frequency exponent
Temp	26.85	no	simulation temperature in degree Celsius
Tnom	26.85	no	parameter measurement temperature

Opamp¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	OpAmp
Description	operational amplifier
Schematic entry	`OpAmp`
Netlist entry	`OP`
Type	AnalogComponent
Bitmap file	opamp
Properties	2
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
G	1e6	yes	voltage gain
Umax	15 V	no	absolute value of maximum and minimum output voltage

Equation Defined Device¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Equation Defined Device
Description	equation defined device
Schematic entry	`EDD`
Netlist entry	`D`
Type	AnalogComponent
Bitmap file	edd
Properties	4
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Type	explicit	no	type of equations [explicit, implicit]
Branches	1	no	number of branches
I1	0	yes	current equation 1
Q1	0	no	charge equation 1

Diac¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Diac
Description	diac (bidirectional trigger diode)
Schematic entry	`Diac`
Netlist entry	`D`
Type	AnalogComponent
Bitmap file	diac
Properties	7
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Vbo	30 V	yes	(bidirectional) breakover voltage
Ibo	50 uA	no	(bidirectional) breakover current
Cj0	10 pF	no	parasitic capacitance
Is	1e-10 A	no	saturation current
N	2	no	emission coefficient
Ri	10 Ohm	no	intrinsic junction resistance
Temp	26.85	no	simulation temperature

Triac¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Triac
Description	triac (bidirectional thyristor)
Schematic entry	`Triac`
Netlist entry	`D`
Type	AnalogComponent
Bitmap file	triac
Properties	8
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Vbo	400 V	no	(bidirectional) breakover voltage
Igt	50 uA	yes	(bidirectional) gate trigger current
Cj0	10 pF	no	parasitic capacitance
Is	1e-10 A	no	saturation current
N	2	no	emission coefficient
Ri	10 Ohm	no	intrinsic junction resistance
Rg	5 Ohm	no	gate resistance
Temp	26.85	no	simulation temperature

Thyristor¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Thyristor
Description	silicon controlled rectifier (SCR)
Schematic entry	`SCR`
Netlist entry	`D`
Type	AnalogComponent
Bitmap file	thyristor
Properties	8
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Vbo	400 V	no	breakover voltage
Igt	50 uA	yes	gate trigger current
Cj0	10 pF	no	parasitic capacitance
Is	1e-10 A	no	saturation current
N	2	no	emission coefficient
Ri	10 Ohm	no	intrinsic junction resistance
Rg	5 Ohm	no	gate resistance
Temp	26.85	no	simulation temperature

Tunnel Diode¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Tunnel Diode
Description	resonance tunnel diode
Schematic entry	`RTD`
Netlist entry	`D`
Type	AnalogComponent
Bitmap file	tunneldiode
Properties	16
Category	nonlinear components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Ip	4 mA	yes	peak current
Iv	0.6 mA	yes	valley current
Vv	0.8 V	yes	valley voltage
Wr	2.7e-20	no	resonance energy in Ws
eta	1e-20	no	Fermi energy in Ws
dW	4.5e-21	no	resonance width in Ws
Tmax	0.95	no	maximum of transmission
de	0.9	no	fitting factor for electron density
dv	2.0	no	fitting factor for voltage drop
nv	16	no	fitting factor for diode current
Cj0	80 fF	no	zero-bias depletion capacitance
M	0.5	no	grading coefficient
Vj	0.5 V	no	junction potential
te	0.6 ps	no	life-time of electrons
Temp	26.85	no	simulation temperature in degree Celsius
Area	1.0	no	default area for diode

Verilog-A Devices¶

Hicum L2 V2.1¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	HICUM L2 v2.1
Description	HICUM Level 2 v2.1 verilog device
Schematic entry	`hicumL2V2p1`
Netlist entry	`T`
Type	AnalogComponent
Bitmap file	npnsub_therm
Properties	101
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Value	Display	Description
c10	1.516E-31	no	GICCR constant
qp0	5.939E-15	no	Zero-bias hole charge
ich	1.0E11	no	High-current correction for 2D and 3D effects
hfe	1.0	no	Emitter minority charge weighting factor in HBTs
hfc	0.03999	no	Collector minority charge weighting factor in HBTs
hjei	0.435	no	B-E depletion charge weighting factor in HBTs
hjci	0.09477	no	B-C depletion charge weighting factor in HBTs
ibeis	3.47E-20	no	Internal B-E saturation current
mbei	1.025	no	Internal B-E current ideality factor
ireis	390E-12	no	Internal B-E recombination saturation current
mrei	3	no	Internal B-E recombination current ideality factor
ibeps	4.18321E-21	no	Peripheral B-E saturation current
mbep	1.045	no	Peripheral B-E current ideality factor
ireps	1.02846E-14	no	Peripheral B-E recombination saturation current
mrep	3	no	Peripheral B-E recombination current ideality factor
mcf	1.0	no	Non-ideality factor for III-V HBTs
ibcis	3.02613E-18	no	Internal B-C saturation current
mbci	1.0	no	Internal B-C current ideality factor
ibcxs	4.576E-29	no	External B-C saturation current
mbcx	1.0	no	External B-C current ideality factor
ibets	0.0	no	B-E tunneling saturation current
abet	36.74	no	Exponent factor for tunneling current
favl	14.97	no	Avalanche current factor
qavl	7.2407E-14	no	Exponent factor for avalanche current
alfav	0.0	no	Relative TC for FAVL
alqav	0.0	no	Relative TC for QAVL
rbi0	7.9	no	Zero bias internal base resistance
rbx	13.15	no	External base series resistance
fgeo	0.724	no	Factor for geometry dependence of emitter current crowding
fdqr0	0	no	Correction factor for modulation by B-E and B-C space charge layer
fcrbi	0.0	no	Ratio of HF shunt to total internal capacitance (lateral NQS effect)
fqi	1.0	no	Ration of internal to total minority charge
re	9.77	no	Emitter series resistance
rcx	10	no	External collector series resistance
itss	2.81242E-19	no	Substrate transistor transfer saturation current
msf	1.0	no	Forward ideality factor of substrate transfer current
iscs	7.6376E-17	no	C-S diode saturation current
msc	1.0	no	Ideality factor of C-S diode current
tsf	1.733E-8	no	Transit time for forward operation of substrate transistor
rsu	800	no	Substrate series resistance
csu	1.778E-14	no	Substrate shunt capacitance
cjei0	5.24382E-14	no	Internal B-E zero-bias depletion capacitance
vdei	0.9956	no	Internal B-E built-in potential
zei	0.4	no	Internal B-E grading coefficient
aljei	2.5	no	Ratio of maximum to zero-bias value of internal B-E capacitance
cjep0	0	no	Peripheral B-E zero-bias depletion capacitance
vdep	1	no	Peripheral B-E built-in potential
zep	0.01	no	Peripheral B-E grading coefficient
aljep	2.5	no	Ratio of maximum to zero-bias value of peripheral B-E capacitance
cjci0	4.46887E-15	no	Internal B-C zero-bias depletion capacitance
vdci	0.7	no	Internal B-C built-in potential
zci	0.38	no	Internal B-C grading coefficient
vptci	100	no	Internal B-C punch-through voltage
cjcx0	1.55709E-14	no	External B-C zero-bias depletion capacitance
vdcx	0.733	no	External B-C built-in potential
zcx	0.34	no	External B-C grading coefficient
vptcx	100	no	External B-C punch-through voltage
fbc	0.3487	no	Partitioning factor of parasitic B-C capacitance
cjs0	17.68E-15	no	C-S zero-bias depletion capacitance
vds	0.621625	no	C-S built-in potential
zs	0.122136	no	C-S grading coefficient
vpts	1000	no	C-S punch-through voltage
t0	1.28E-12	no	Low current forward transit time at VBC=0V
dt0h	260E-15	no	Time constant for base and B-C space charge layer width modulation
tbvl	2.0E-13	no	Time constant for modelling carrier jam at low VCE
tef0	0.0	no	Neutral emitter storage time
gtfe	1.0	no	Exponent factor for current dependence of neutral emitter storage time
thcs	46E-15	no	Saturation time constant at high current densities
alhc	0.08913	no	Smoothing factor for current dependence of base and collector transit time
fthc	0.8778	no	Partitioning factor for base and collector portion
rci0	50.4277	no	Internal collector resistance at low electric field
vlim	0.9	no	Voltage separating ohmic and saturation velocity regime
vces	0.01	no	Internal C-E saturation voltage
vpt	10	no	Collector punch-through voltage
tr	1.0E-11	no	Storage time for inverse operation
ceox	1.71992E-15	no	Total parasitic B-E capacitance
ccox	4.9E-15	no	Total parasitic B-C capacitance
alqf	0.1288	no	Factor for additional delay time of minority charge
alit	1.0	no	Factor for additional delay time of transfer current
kf	2.83667E-9	no	Flicker noise coefficient
af	2.0	no	Flicker noise exponent factor
krbi	1.0	no	Noise factor for internal base resistance
latb	10.479	no	Scaling factor for collector minority charge in direction of emitter width
latl	0.300012	no	Scaling factor for collector minority charge in direction of emitter length
vgb	1.112	no	Bandgap voltage extrapolated to 0 K
alt0	0.0017580	no	First order relative TC of parameter T0
kt0	4.07E-6	no	Second order relative TC of parameter T0
zetaci	0.7	no	Temperature exponent for RCI0
zetacx	1.0	no	Temperature exponent of mobility in substrate transistor transit time
alvs	0.001	no	Relative TC of saturation drift velocity
alces	0.000125	no	Relative TC of VCES
zetarbi	0.0	no	Temperature exponent of internal base resistance
zetarbx	0.2	no	Temperature exponent of external base resistance
zetarcx	0.21	no	Temperature exponent of external collector resistance
zetare	0.7	no	Temperature exponent of emitter resistance
alb	0.007	no	Relative TC of forward current gain for V2.1 model
rth	1293.95	no	Thermal resistance
cth	7.22203E-11	no	Thermal capacitance
tnom	27.0	no	Temperature at which parameters are specified
dt	0.0	no	Temperature change w.r.t. chip temperature for particular transistor
Temp	27	no	simulation temperature

Fbh Hbt¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	FBH HBT
Description	HBT model by Ferdinand-Braun-Institut (FBH), Berlin
Schematic entry	`HBT_X`
Netlist entry	`T`
Type	AnalogComponent
Bitmap file	npn_therm
Properties	80
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Mode	1	no	Ignored
Noise	1	no	Ignored
Debug	0	no	Ignored
DebugPlus	0	no	Ignored
Temp	25.0	no	Device operating temperature, Celsius
Rth	0.1	no	Thermal resistance, K/W
Cth	700e-9	no	Thermal capacitance
N	1	no	Scaling factor, number of emitter fingers
L	30e-6	no	Length of emitter finger, m
W	1e-6	no	Width of emitter finger, m
Jsf	20e-24	no	Forward saturation current density, A/um^2
nf	1.0	no	Forward current emission coefficient
Vg	1.3	no	Forward thermal activation energy, V, (0 == disables temperature dependence)
Jse	0.0	no	B-E leakage saturation current density, A/um^2
ne	0.0	no	B-E leakage emission coefficient
Rbxx	1e6	no	Limiting resistor of B-E leakage diode, Ohm
Vgb	0.0	no	B-E leakage thermal activation energy, V, (0 == disables temperature dependence)
Jsee	0.0	no	2nd B-E leakage saturation current density, A/um^2
nee	0.0	no	2nd B-E leakage emission coefficient
Rbbxx	1e6	no	2nd Limiting resistor of B-E leakage diode, Ohm
Vgbb	0.0	no	2nd B-E leakage thermal activation energy, V, (0 == disables temperature dependence)
Jsr	20e-18	no	Reverse saturation current density, A/um^2
nr	1.0	no	Reverse current emission coefficient
Vgr	0.0	no	Reverse thermal activation energy, V, (0 == disables temperature dependence)
XCjc	0.5	no	Fraction of Cjc that goes to internal base node
Jsc	0.0	no	B-C leakage saturation current density, A/um^2 (0. switches off diode)
nc	0.0	no	B-C leakage emission coefficient (0. switches off diode)
Rcxx	1e6	no	Limiting resistor of B-C leakage diode, Ohm
Vgc	0.0	no	B-C leakage thermal activation energy, V, (0 == disables temperature dependence)
Bf	100.0	no	Ideal forward beta
kBeta	0.0	no	Temperature coefficient of forward current gain, -1/K, (0 == disables temperature dependence)
Br	1.0	no	Ideal reverse beta
VAF	0.0	no	Forward Early voltage, V, (0 == disables Early Effect)
VAR	0.0	no	Reverse Early voltage, V, (0 == disables Early Effect)
IKF	0.0	no	Forward high-injection knee current, A, (0 == disables Webster Effect)
IKR	0.0	no	Reverse high-injection knee current, A, (0 == disables Webster Effect)
Mc	0.0	no	C-E breakdown exponent, (0 == disables collector break-down)
BVceo	0.0	no	C-E breakdown voltage, V, (0 == disables collector break-down)
kc	0.0	no	C-E breakdown factor, (0 == disables collector break-down)
BVebo	0.0	no	B-E breakdown voltage, V, (0 == disables emitter break-down)
Tr	1.0e-15	no	Ideal reverse transit time, s
Trx	1.0e-15	no	Extrinsic BC diffusion capacitance, F
Tf	1.0e-12	no	Ideal forward transit time, s
Tft	0.0	no	Temperature coefficient of forward transit time
Thcs	0.0	no	Excess transit time coefficient at base push-out
Ahc	0.0	no	Smoothing parameter for Thcs
Cje	1.0e-15	no	B-E zero-bias depletion capacitance, F/um^2
mje	0.5	no	B-E junction exponential factor
Vje	1.3	no	B-E junction built-in potential, V
Cjc	1.0e-15	no	B-C zero-bias depletion capacitance, F/um^2
mjc	0.5	no	B-C junction exponential factor
Vjc	1.3	no	B-C junction built-in potential, V
kjc	1.0	no	not used
Cmin	0.1e-15	no	Minimum B-C depletion capacitance (Vbc dependence), F/um^2
J0	1e-3	no	Collector current where Cbc reaches Cmin, A/um^2 (0 == disables Cbc reduction)
XJ0	1.0	no	Fraction of Cmin, lower limit of BC capacitance (Ic dependence)
Rci0	1e-3	no	Onset of base push-out at low voltages, Ohm*um^2 (0 == disables base push-out)
Jk	4e-4	no	Onset of base push-out at high voltages, A/um^2, (0 == disables base push-out)
RJk	1e-3	no	Slope of Jk at high currents , Ohm*um^2
Vces	1e-3	no	Voltage shift of base push-out onset, V
Rc	1.0	no	Collector resistance, Ohm/finger
Re	1.0	no	Emitter resistance, Ohm/finger
Rb	1.0	no	Extrinsic base resistance, Ohm/finger
Rb2	1.0	no	Inner Base ohmic resistance, Ohm/finger
Lc	0.0	no	Collector inductance, H
Le	0.0	no	Emitter inductance, H
Lb	0.0	no	Base inductance, H
Cq	0.0	no	Extrinsic B-C capacitance, F
Cpb	0.0	no	Extrinsic base capacitance, F
Cpc	0.0	no	Extrinsic collector capacitance, F
Kfb	0.0	no	Flicker-noise coefficient
Afb	0.0	no	Flicker-noise exponent
Ffeb	0.0	no	Flicker-noise frequency exponent
Kb	0.0	no	Burst noise coefficient
Ab	0.0	no	Burst noise exponent
Fb	0.0	no	Burst noise corner frequency, Hz
Kfe	0.0	no	Flicker-noise coefficient
Afe	0.0	no	Flicker-noise exponent
Ffee	0.0	no	Flicker-noise frequency exponent
Tnom	20.0	no	Ambient temperature at which the parameters were determined

Modular Opamp¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Modular OpAmp
Description	Modular Operational Amplifier verilog device
Schematic entry	`mod_amp`
Netlist entry	`OP`
Type	AnalogComponent
Bitmap file	mod_amp
Properties	17
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Value	Display	Description
GBP	1e6	no	Gain bandwidth product (Hz)
AOLDC	106.0	no	Open-loop differential gain at DC (dB)
FP2	3e6	no	Second pole frequency (Hz)
RO	75	no	Output resistance (Ohm)
CD	1e-12	no	Differential input capacitance (F)
RD	2e6	no	Differential input resistance (Ohm)
IOFF	20e-9	no	Input offset current (A)
IB	80e-9	no	Input bias current (A)
VOFF	7e-4	no	Input offset voltage (V)
CMRRDC	90.0	no	Common-mode rejection ratio at DC (dB)
FCM	200.0	no	Common-mode zero corner frequency (Hz)
PSRT	5e5	no	Positive slew rate (V/s)
NSRT	5e5	no	Negative slew rate (V/s)
VLIMP	14	no	Positive output voltage limit (V)
VLIMN	-14	no	Negative output voltage limit (V)
ILMAX	35e-3	no	Maximum DC output current (A)
CSCALE	50	no	Current limit scale factor

Hicum L2 V2.22¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	HICUM L2 v2.22
Description	HICUM Level 2 v2.22 verilog device
Schematic entry	`hic2_full`
Netlist entry	`T`
Type	AnalogComponent
Bitmap file	npnsub_therm
Properties	114
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Value	Display	Description
c10	2.0E-30	no	GICCR constant (A^2s)
qp0	2.0E-14	no	Zero-bias hole charge (Coul)
ich	0.0	no	High-current correction for 2D and 3D effects (A)
hfe	1.0	no	Emitter minority charge weighting factor in HBTs
hfc	1.0	no	Collector minority charge weighting factor in HBTs
hjei	1.0	no	B-E depletion charge weighting factor in HBTs
hjci	1.0	no	B-C depletion charge weighting factor in HBTs
ibeis	1.0E-18	no	Internal B-E saturation current (A)
mbei	1.0	no	Internal B-E current ideality factor
ireis	0.0	no	Internal B-E recombination saturation current (A)
mrei	2.0	no	Internal B-E recombination current ideality factor
ibeps	0.0	no	Peripheral B-E saturation current (A)
mbep	1.0	no	Peripheral B-E current ideality factor
ireps	0.0	no	Peripheral B-E recombination saturation current (A)
mrep	2.0	no	Peripheral B-E recombination current ideality factor
mcf	1.0	no	Non-ideality factor for III-V HBTs
tbhrec	0.0	no	Base current recombination time constant at B-C barrier for high forward injection (s)
ibcis	1.0E-16	no	Internal B-C saturation current (A)
mbci	1.0	no	Internal B-C current ideality factor
ibcxs	0.0	no	External B-C saturation current (A)
mbcx	1.0	no	External B-C current ideality factor
ibets	0.0	no	B-E tunneling saturation current (A)
abet	40	no	Exponent factor for tunneling current
tunode	1	no	Specifies the base node connection for the tunneling current
favl	0.0	no	Avalanche current factor (1/V)
qavl	0.0	no	Exponent factor for avalanche current (Coul)
alfav	0.0	no	Relative TC for FAVL (1/K)
alqav	0.0	no	Relative TC for QAVL (1/K)
rbi0	0.0	no	Zero bias internal base resistance (Ohm)
rbx	0.0	no	External base series resistance (Ohm)
fgeo	0.6557	no	Factor for geometry dependence of emitter current crowding
fdqr0	0.0	no	Correction factor for modulation by B-E and B-C space charge layer
fcrbi	0.0	no	Ratio of HF shunt to total internal capacitance (lateral NQS effect)
fqi	1.0	no	Ration of internal to total minority charge
re	0.0	no	Emitter series resistance (Ohm)
rcx	0.0	no	External collector series resistance (Ohm)
itss	0.0	no	Substrate transistor transfer saturation current (A)
msf	1.0	no	Forward ideality factor of substrate transfer current
iscs	0.0	no	C-S diode saturation current (A)
msc	1.0	no	Ideality factor of C-S diode current
tsf	0.0	no	Transit time for forward operation of substrate transistor (s)
rsu	0.0	no	Substrate series resistance (Ohm)
csu	0.0	no	Substrate shunt capacitance (F)
cjei0	1.0E-20	no	Internal B-E zero-bias depletion capacitance (F)
vdei	0.9	no	Internal B-E built-in potential (V)
zei	0.5	no	Internal B-E grading coefficient
ajei	2.5	no	Ratio of maximum to zero-bias value of internal B-E capacitance
cjep0	1.0E-20	no	Peripheral B-E zero-bias depletion capacitance (F)
vdep	0.9	no	Peripheral B-E built-in potential (V)
zep	0.5	no	Peripheral B-E grading coefficient
ajep	2.5	no	Ratio of maximum to zero-bias value of peripheral B-E capacitance
cjci0	1.0E-20	no	Internal B-C zero-bias depletion capacitance (F)
vdci	0.7	no	Internal B-C built-in potential (V)
zci	0.4	no	Internal B-C grading coefficient
vptci	100	no	Internal B-C punch-through voltage (V)
cjcx0	1.0E-20	no	External B-C zero-bias depletion capacitance (F)
vdcx	0.7	no	External B-C built-in potential (V)
zcx	0.4	no	External B-C grading coefficient
vptcx	100	no	External B-C punch-through voltage (V)
fbcpar	0.0	no	Partitioning factor of parasitic B-C cap
fbepar	1.0	no	Partitioning factor of parasitic B-E cap
cjs0	0.0	no	C-S zero-bias depletion capacitance (F)
vds	0.6	no	C-S built-in potential (V)
zs	0.5	no	C-S grading coefficient
vpts	100	no	C-S punch-through voltage (V)
t0	0.0	no	Low current forward transit time at VBC=0V (s)
dt0h	0.0	no	Time constant for base and B-C space charge layer width modulation (s)
tbvl	0.0	no	Time constant for modelling carrier jam at low VCE (s)
tef0	0.0	no	Neutral emitter storage time (s)
gtfe	1.0	no	Exponent factor for current dependence of neutral emitter storage time
thcs	0.0	no	Saturation time constant at high current densities (s)
ahc	0.1	no	Smoothing factor for current dependence of base and collector transit time
fthc	0.0	no	Partitioning factor for base and collector portion
rci0	150	no	Internal collector resistance at low electric field (Ohm)
vlim	0.5	no	Voltage separating ohmic and saturation velocity regime (V)
vces	0.1	no	Internal C-E saturation voltage (V)
vpt	0.0	no	Collector punch-through voltage (V)
tr	0.0	no	Storage time for inverse operation (s)
cbepar	0.0	no	Total parasitic B-E capacitance (F)
cbcpar	0.0	no	Total parasitic B-C capacitance (F)
alqf	0.0	no	Factor for additional delay time of minority charge
alit	0.0	no	Factor for additional delay time of transfer current
flnqs	0	no	Flag for turning on and off of vertical NQS effect
kf	0.0	no	Flicker noise coefficient
af	2.0	no	Flicker noise exponent factor
cfbe	-1	no	Flag for determining where to tag the flicker noise source
latb	0.0	no	Scaling factor for collector minority charge in direction of emitter width
latl	0.0	no	Scaling factor for collector minority charge in direction of emitter length
vgb	1.17	no	Bandgap voltage extrapolated to 0 K (V)
alt0	0.0	no	First order relative TC of parameter T0 (1/K)
kt0	0.0	no	Second order relative TC of parameter T0
zetaci	0.0	no	Temperature exponent for RCI0
alvs	0.0	no	Relative TC of saturation drift velocity (1/K)
alces	0.0	no	Relative TC of VCES (1/K)
zetarbi	0.0	no	Temperature exponent of internal base resistance
zetarbx	0.0	no	Temperature exponent of external base resistance
zetarcx	0.0	no	Temperature exponent of external collector resistance
zetare	0.0	no	Temperature exponent of emitter resistance
zetacx	1.0	no	Temperature exponent of mobility in substrate transistor transit time
vge	1.17	no	Effective emitter bandgap voltage (V)
vgc	1.17	no	Effective collector bandgap voltage (V)
vgs	1.17	no	Effective substrate bandgap voltage (V)
f1vg	-1.02377e-4	no	Coefficient K1 in T-dependent band-gap equation
f2vg	4.3215e-4	no	Coefficient K2 in T-dependent band-gap equation
zetact	3.0	no	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	no	Exponent coefficient in B-E junction current temperature dependence
alb	0.0	no	Relative TC of forward current gain for V2.1 model (1/K)
flsh	0	no	Flag for turning on and off self-heating effect
rth	0.0	no	Thermal resistance (K/W)
cth	0.0	no	Thermal capacitance (J/W)
flcomp	0.0	no	Flag for compatibility with v2.1 model (0=v2.1)
tnom	27.0	no	Temperature at which parameters are specified (C)
dt	0.0	no	Temperature change w.r.t. chip temperature for particular transistor (K)
Temp	27	no	simulation temperature

Logarithmic Amplifier¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Logarithmic Amplifier
Description	Logarithmic Amplifier verilog device
Schematic entry	`log_amp`
Netlist entry	`LA`
Type	AnalogComponent
Bitmap file	log_amp
Properties	17
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Kv	1.0	no	scale factor
Dk	0.3	no	scale factor error (%)
Ib1	5e-12	no	input I1 bias current (A)
Ibr	5e-12	no	input reference bias current (A)
M	5	no	number of decades
N	0.1	no	conformity error (%)
Vosout	3e-3	no	output offset error (V)
Rinp	1e6	no	amplifier input resistance (Ohm)
Fc	1e3	no	amplifier 3dB frequency (Hz)
Ro	1e-3	no	amplifier output resistance (Ohm)
Ntc	0.002	no	conformity error temperature coefficient (%/Celsius)
Vosouttc	80e-6	no	offset temperature coefficient (V/Celsius)
Dktc	0.03	no	scale factor error temperature coefficient (%/Celsius)
Ib1tc	0.5e-12	no	input I1 bias current temperature coefficient (A/Celsius)
Ibrtc	0.5e-12	no	input reference bias current temperature coefficient (A/Celsius)
Tnom	26.85	no	parameter measurement temperature (Celsius)
Temp	26.85	no	simulation temperature

Npn Hicum L0 V1.12¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	npn HICUM L0 v1.12
Description	HICUM Level 0 v1.12 verilog device
Schematic entry	`hic0_full`
Netlist entry	`T`
Type	AnalogComponent
Bitmap file	npnsub_therm
Properties	86
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Type	npn	yes	polarity [npn, pnp]
is	1.0e-16	no	(Modified) saturation current (A)
mcf	1.00	no	Non-ideality coefficient of forward collector current
mcr	1.00	no	Non-ideality coefficient of reverse collector current
vef	1.0e6	no	forward Early voltage (normalization volt.) (V)
iqf	1.0e6	no	forward d.c. high-injection roll-off current (A)
iqr	1.0e6	no	inverse d.c. high-injection roll-off current (A)
iqfh	1.0e6	no	high-injection correction current (A)
tfh	1.0e6	no	high-injection correction factor
ibes	1e-18	no	BE saturation current (A)
mbe	1.0	no	BE non-ideality factor
ires	0.0	no	BE recombination saturation current (A)
mre	2.0	no	BE recombination non-ideality factor
ibcs	0.0	no	BC saturation current (A)
mbc	1.0	no	BC non-ideality factor
cje0	1.0e-20	no	Zero-bias BE depletion capacitance (F)
vde	0.9	no	BE built-in voltage (V)
ze	0.5	no	BE exponent factor
aje	2.5	no	Ratio of maximum to zero-bias value
t0	0.0	no	low current transit time at Vbici=0 (s)
dt0h	0.0	no	Base width modulation contribution (s)
tbvl	0.0	no	SCR width modulation contribution (s)
tef0	0.0	no	Storage time in neutral emitter (s)
gte	1.0	no	Exponent factor for emitter transit time
thcs	0.0	no	Saturation time at high current densities (s)
ahc	0.1	no	Smoothing factor for current dependence
tr	0.0	no	Storage time at inverse operation (s)
rci0	150	no	Low-field collector resistance under emitter (Ohm)
vlim	0.5	no	Voltage dividing ohmic and satur.region (V)
vpt	100	no	Punch-through voltage (V)
vces	0.1	no	Saturation voltage (V)
cjci0	1.0e-20	no	Total zero-bias BC depletion capacitance (F)
vdci	0.7	no	BC built-in voltage (V)
zci	0.333	no	BC exponent factor
vptci	100	no	Punch-through voltage of BC junction (V)
cjcx0	1.0e-20	no	Zero-bias external BC depletion capacitance (F)
vdcx	0.7	no	External BC built-in voltage (V)
zcx	0.333	no	External BC exponent factor
vptcx	100	no	Punch-through voltage (V)
fbc	1.0	no	Split factor = Cjci0/Cjc0
rbi0	0.0	no	Internal base resistance at zero-bias (Ohm)
vr0e	2.5	no	forward Early voltage (normalization volt.) (V)
vr0c	1.0e6	no	forward Early voltage (normalization volt.) (V)
fgeo	0.656	no	Geometry factor
rbx	0.0	no	External base series resistance (Ohm)
rcx	0.0	no	Emitter series resistance (Ohm)
re	0.0	no	External collector series resistance (Ohm)
itss	0.0	no	Substrate transistor transfer saturation current (A)
msf	1.0	no	Substrate transistor transfer current non-ideality factor
iscs	0.0	no	SC saturation current (A)
msc	1.0	no	SC non-ideality factor
cjs0	1.0e-20	no	Zero-bias SC depletion capacitance (F)
vds	0.3	no	SC built-in voltage (V)
zs	0.3	no	External SC exponent factor
vpts	100	no	SC punch-through voltage (V)
cbcpar	0.0	no	Collector-base isolation (overlap) capacitance (F)
cbepar	0.0	no	Emitter-base oxide capacitance (F)
eavl	0.0	no	Exponent factor
kavl	0.0	no	Prefactor
kf	0.0	no	flicker noise coefficient (M^(1-AF))
af	2.0	no	flicker noise exponent factor
vgb	1.2	no	Bandgap-voltage (V)
vge	1.17	no	Effective emitter bandgap-voltage (V)
vgc	1.17	no	Effective collector bandgap-voltage (V)
vgs	1.17	no	Effective substrate bandgap-voltage (V)
f1vg	-1.02377e-4	no	Coefficient K1 in T-dependent bandgap equation (V/K)
f2vg	4.3215e-4	no	Coefficient K2 in T-dependent bandgap equation (V/K)
alt0	0.0	no	Frist-order TC of tf0 (1/K)
kt0	0.0	no	Second-order TC of tf0 (1/K^2)
zetact	3.0	no	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	no	Exponent coefficient in BE junction current temperature dependence
zetaci	0.0	no	TC of epi-collector diffusivity
alvs	0.0	no	Relative TC of satur.drift velocity (1/K)
alces	0.0	no	Relative TC of vces (1/K)
zetarbi	0.0	no	TC of internal base resistance
zetarbx	0.0	no	TC of external base resistance
zetarcx	0.0	no	TC of external collector resistance
zetare	0.0	no	TC of emitter resistances
alkav	0.0	no	TC of avalanche prefactor (1/K)
aleav	0.0	no	TC of avalanche exponential factor (1/K)
flsh	0	no	Flag for self-heating calculation
rth	0.0	no	Thermal resistance (K/W)
cth	0.0	no	Thermal capacitance (Ws/K)
tnom	27	no	Temperature for which parameters are valid (C)
dt	0.0	no	Temperature change for particular transistor (K)
Temp	26.85	no	simulation temperature

Pnp Hicum L0 V1.12¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	pnp HICUM L0 v1.12
Description	HICUM Level 0 v1.12 verilog device
Schematic entry	`hic0_full`
Netlist entry	`T`
Type	AnalogComponent
Bitmap file	pnpsub_therm
Properties	86
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Type	pnp	yes	polarity [npn, pnp]
is	1.0e-16	no	(Modified) saturation current (A)
mcf	1.00	no	Non-ideality coefficient of forward collector current
mcr	1.00	no	Non-ideality coefficient of reverse collector current
vef	1.0e6	no	forward Early voltage (normalization volt.) (V)
iqf	1.0e6	no	forward d.c. high-injection roll-off current (A)
iqr	1.0e6	no	inverse d.c. high-injection roll-off current (A)
iqfh	1.0e6	no	high-injection correction current (A)
tfh	1.0e6	no	high-injection correction factor
ibes	1e-18	no	BE saturation current (A)
mbe	1.0	no	BE non-ideality factor
ires	0.0	no	BE recombination saturation current (A)
mre	2.0	no	BE recombination non-ideality factor
ibcs	0.0	no	BC saturation current (A)
mbc	1.0	no	BC non-ideality factor
cje0	1.0e-20	no	Zero-bias BE depletion capacitance (F)
vde	0.9	no	BE built-in voltage (V)
ze	0.5	no	BE exponent factor
aje	2.5	no	Ratio of maximum to zero-bias value
t0	0.0	no	low current transit time at Vbici=0 (s)
dt0h	0.0	no	Base width modulation contribution (s)
tbvl	0.0	no	SCR width modulation contribution (s)
tef0	0.0	no	Storage time in neutral emitter (s)
gte	1.0	no	Exponent factor for emitter transit time
thcs	0.0	no	Saturation time at high current densities (s)
ahc	0.1	no	Smoothing factor for current dependence
tr	0.0	no	Storage time at inverse operation (s)
rci0	150	no	Low-field collector resistance under emitter (Ohm)
vlim	0.5	no	Voltage dividing ohmic and satur.region (V)
vpt	100	no	Punch-through voltage (V)
vces	0.1	no	Saturation voltage (V)
cjci0	1.0e-20	no	Total zero-bias BC depletion capacitance (F)
vdci	0.7	no	BC built-in voltage (V)
zci	0.333	no	BC exponent factor
vptci	100	no	Punch-through voltage of BC junction (V)
cjcx0	1.0e-20	no	Zero-bias external BC depletion capacitance (F)
vdcx	0.7	no	External BC built-in voltage (V)
zcx	0.333	no	External BC exponent factor
vptcx	100	no	Punch-through voltage (V)
fbc	1.0	no	Split factor = Cjci0/Cjc0
rbi0	0.0	no	Internal base resistance at zero-bias (Ohm)
vr0e	2.5	no	forward Early voltage (normalization volt.) (V)
vr0c	1.0e6	no	forward Early voltage (normalization volt.) (V)
fgeo	0.656	no	Geometry factor
rbx	0.0	no	External base series resistance (Ohm)
rcx	0.0	no	Emitter series resistance (Ohm)
re	0.0	no	External collector series resistance (Ohm)
itss	0.0	no	Substrate transistor transfer saturation current (A)
msf	1.0	no	Substrate transistor transfer current non-ideality factor
iscs	0.0	no	SC saturation current (A)
msc	1.0	no	SC non-ideality factor
cjs0	1.0e-20	no	Zero-bias SC depletion capacitance (F)
vds	0.3	no	SC built-in voltage (V)
zs	0.3	no	External SC exponent factor
vpts	100	no	SC punch-through voltage (V)
cbcpar	0.0	no	Collector-base isolation (overlap) capacitance (F)
cbepar	0.0	no	Emitter-base oxide capacitance (F)
eavl	0.0	no	Exponent factor
kavl	0.0	no	Prefactor
kf	0.0	no	flicker noise coefficient (M^(1-AF))
af	2.0	no	flicker noise exponent factor
vgb	1.2	no	Bandgap-voltage (V)
vge	1.17	no	Effective emitter bandgap-voltage (V)
vgc	1.17	no	Effective collector bandgap-voltage (V)
vgs	1.17	no	Effective substrate bandgap-voltage (V)
f1vg	-1.02377e-4	no	Coefficient K1 in T-dependent bandgap equation (V/K)
f2vg	4.3215e-4	no	Coefficient K2 in T-dependent bandgap equation (V/K)
alt0	0.0	no	Frist-order TC of tf0 (1/K)
kt0	0.0	no	Second-order TC of tf0 (1/K^2)
zetact	3.0	no	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	no	Exponent coefficient in BE junction current temperature dependence
zetaci	0.0	no	TC of epi-collector diffusivity
alvs	0.0	no	Relative TC of satur.drift velocity (1/K)
alces	0.0	no	Relative TC of vces (1/K)
zetarbi	0.0	no	TC of internal base resistance
zetarbx	0.0	no	TC of external base resistance
zetarcx	0.0	no	TC of external collector resistance
zetare	0.0	no	TC of emitter resistances
alkav	0.0	no	TC of avalanche prefactor (1/K)
aleav	0.0	no	TC of avalanche exponential factor (1/K)
flsh	0	no	Flag for self-heating calculation
rth	0.0	no	Thermal resistance (K/W)
cth	0.0	no	Thermal capacitance (Ws/K)
tnom	27	no	Temperature for which parameters are valid (C)
dt	0.0	no	Temperature change for particular transistor (K)
Temp	26.85	no	simulation temperature

Potentiometer¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Potentiometer
Description	Potentiometer verilog device
Schematic entry	`potentiometer`
Netlist entry	`POT`
Type	AnalogComponent
Bitmap file	potentiometer
Properties	11
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Value	Display	Description
R_pot	1e4	no	nominal device resistance (Ohm)
Rotation	120	no	shaft/wiper arm rotation (degrees)
Taper_Coeff	0	no	resistive law taper coefficient
LEVEL	1	no	device type selector [1, 2, 3]
Max_Rotation	240.0	no	maximum shaft/wiper rotation (degrees)
Conformity	0.2	no	conformity error (%)
Linearity	0.2	no	linearity error (%)
Contact_Res	1	no	wiper arm contact resistance (Ohm)
Temp_Coeff	100	no	resistance temperature coefficient (PPM/Celsius)
Tnom	26.85	no	parameter measurement temperature (Celsius)
Temp	26.85	no	simulation temperature

Mesfet¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	MESFET
Description	MESFET verilog device
Schematic entry	`MESFET`
Netlist entry	`T`
Type	AnalogComponent
Bitmap file	MESFET
Properties	52
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Value	Display	Description
LEVEL	1	no	model selector
Vto	-1.8	no	pinch-off voltage (V)
Beta	3e-3	no	transconductance parameter (A/(V*V))
Alpha	2.25	no	saturation voltage parameter (1/V)
Lambda	0.05	no	channel length modulation parameter (1/V)
B	0.3	no	doping profile parameter (1/V)
Qp	2.1	no	power law exponent parameter
Delta	0.1	no	power feedback parameter (1/W)
Vmax	0.5	no	maximum junction voltage limit before capacitance limiting (V)
Vdelta1	0.3	no	capacitance saturation transition voltage (V)
Vdelta2	0.2	no	capacitance threshold transition voltage (V)
Gamma	0.015	no	dc drain pull coefficient
Nsc	1	no	subthreshold conductance parameter
Is	1e-14	no	diode saturation current (I)
N	1	no	diode emission coefficient
Vbi	1.0	no	built-in gate potential (V)
Bv	60	no	gate-drain junction reverse bias breakdown voltage (V)
Xti	3.0	no	diode saturation current temperature coefficient
Fc	0.5	no	forward-bias depletion capacitance coefficient
Tau	1e-9	no	transit time under gate (s)
Rin	1e-3	no	channel resistance (Ohm)
Area	1	no	area factor
Eg	1.11	no	energy gap (eV)
M	0.5	no	grading coefficient
Cgd	0.2e-12	no	zero bias gate-drain junction capacitance (F)
Cgs	1e-12	no	zero bias gate-source junction capacitance (F)
Cds	1e-12	no	zero bias drain-source junction capacitance (F)
Betatc	0	no	Beta temperature coefficient (%/Celsius)
Alphatc	0	no	Alpha temperature coefficient (%/Celsius)
Gammatc	0	no	Gamma temperature coefficient (%/Celsius)
Ng	2.65	no	Subthreshold slope gate parameter
Nd	-0.19	no	subthreshold drain pull parameter
ILEVELS	3	no	gate-source current equation selector
ILEVELD	3	no	gate-drain current equation selector
QLEVELS	2	no	gate-source charge equation selector
QLEVELD	2	no	gate-drain charge equation selector
QLEVELDS	2	no	drain-source charge equation selector
Vtotc	0	no	Vto temperature coefficient
Rg	5.1	no	gate resistance (Ohms)
Rd	1.3	no	drain resistance (Ohms)
Rs	1.3	no	source resistance (Ohms)
Rgtc	0	no	gate resistance temperature coefficient (1/Celsius)
Rdtc	0	no	drain resistance temperature coefficient (1/Celsius)
Rstc	0	no	source resistance temperature coefficient (1/Celsius)
Ibv	1e-3	no	gate reverse breakdown currrent (A)
Rf	10	no	forward bias slope resistance (Ohms)
R1	10	no	breakdown slope resistance (Ohms)
Af	1	no	flicker noise exponent
Kf	0	no	flicker noise coefficient
Gdsnoi	1	no	shot noise coefficient
Tnom	26.85	no	parameter measurement temperature (Celsius)
Temp	26.85	no	simulation temperature

Epfl-Ekv Nmos 2.6¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	EPFL-EKV NMOS 2.6
Description	EPFL-EKV MOS 2.6 verilog device
Schematic entry	`EKV26MOS`
Netlist entry	`M`
Type	AnalogComponent
Bitmap file	EKV26nMOS
Properties	55
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Type	nmos	yes	polarity [nmos, pmos]
LEVEL	1	no	long = 1, short = 2
L	0.5e-6	no	length parameter (m)
W	10e-6	no	Width parameter (m)
Np	1.0	no	parallel multiple device number
Ns	1.0	no	series multiple device number
Cox	3.45e-3	no	gate oxide capacitance per unit area (F/m**2)
Xj	0.15e-6	no	metallurgical junction depth (m)
Dw	-0.02e-6	no	channel width correction (m)
Dl	-0.05e-6	no	channel length correction (m)
Vto	0.6	no	long channel threshold voltage (V)
Gamma	0.71	no	body effect parameter (V**(1/2))
Phi	0.97	no	bulk Fermi potential (V)
Kp	150e-6	no	transconductance parameter (A/V**2)
Theta	50e-3	no	mobility reduction coefficient (1/V)
EO	88.0e6	no	mobility coefficient (V/m)
Ucrit	4.5e6	no	longitudinal critical field (V/m)
Lambda	0.23	no	depletion length coefficient
Weta	0.05	no	narrow-channel effect coefficient
Leta	0.28	no	longitudinal critical field
Q0	280e-6	no	reverse short channel charge density (As/m*2)
Lk	0.5e-6	no	characteristic length (m)
Tcv	1.5e-3	no	threshold voltage temperature coefficient (V/K)
Bex	-1.5	no	mobility temperature coefficient
Ucex	1.7	no	Longitudinal critical field temperature exponent
Ibbt	0.0	no	Ibb temperature coefficient (1/K)
Hdif	0.9e-6	no	heavily doped diffusion length (m)
Rsh	510.0	no	drain/source diffusion sheet resistance (Ohm/square)
Rsc	0.0	no	source contact resistance (Ohm)
Rdc	0.0	no	drain contact resistance (Ohm)
Cgso	1.5e-10	no	gate to source overlap capacitance (F/m)
Cgdo	1.5e-10	no	gate to drain overlap capacitance (F/m)
Cgbo	4.0e-10	no	gate to bulk overlap capacitance (F/m)
Iba	2e8	no	first impact ionization coefficient (1/m)
Ibb	3.5e8	no	second impact ionization coefficient (V/m)
Ibn	1.0	no	saturation voltage factor for impact ionization
Kf	1.0e-27	no	flicker noise coefficient
Af	1.0	no	flicker noise exponent
Avto	0.0	no	area related theshold voltage mismatch parameter (V*m)
Akp	0.0	no	area related gain mismatch parameter (m)
Agamma	0.0	no	area related body effect mismatch parameter (sqrt(V)*m)
N	1.0	no	emission coefficient
Is	1e-14	no	saturation current (A)
Bv	100	no	reverse breakdown voltage (V)
Ibv	1e-3	no	current at reverse breakdown voltage (A)
Vj	1.0	no	junction potential (V)
Cj0	300e-15	no	zero-bias junction capacitance (F)
M	0.5	no	grading coefficient
Area	1.0	no	diode relative area
Fc	0.5	no	forward-bias depletion capacitance coefficient
Tt	0.1e-9	no	transit time (s)
Xti	3.0	no	saturation current temperature exponent
Xpart	0.4	no	charge partition parameter
Tnom	26.85	no	parameter measurement temperature (Celsius)
Temp	26.85	no	simulation temperature

Epfl-Ekv Pmos 2.6¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	EPFL-EKV PMOS 2.6
Description	EPFL-EKV MOS 2.6 verilog device
Schematic entry	`EKV26MOS`
Netlist entry	`M`
Type	AnalogComponent
Bitmap file	EKV26pMOS
Properties	55
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Type	pmos	yes	polarity [nmos, pmos]
LEVEL	1	no	long = 1, short = 2
L	0.5e-6	no	length parameter (m)
W	10e-6	no	Width parameter (m)
Np	1.0	no	parallel multiple device number
Ns	1.0	no	series multiple device number
Cox	3.45e-3	no	gate oxide capacitance per unit area (F/m**2)
Xj	0.15e-6	no	metallurgical junction depth (m)
Dw	-0.03e-6	no	channel width correction (m)
Dl	-0.05e-6	no	channel length correction (m)
Vto	-0.55	no	long channel threshold voltage (V)
Gamma	0.69	no	body effect parameter (V**(1/2))
Phi	0.87	no	bulk Fermi potential (V)
Kp	35e-6	no	transconductance parameter (A/V**2)
Theta	50e-3	no	mobility reduction coefficient (1/V)
EO	51.0e6	no	mobility coefficient (V/m)
Ucrit	18.0e6	no	longitudinal critical field (V/m)
Lambda	1.1	no	depletion length coefficient
Weta	0.0	no	narrow-channel effect coefficient
Leta	0.45	no	longitudinal critical field
Q0	200e-6	no	reverse short channel charge density (As/m*2)
Lk	0.6e-6	no	characteristic length (m)
Tcv	-1.4e-3	no	threshold voltage temperature coefficient (V/K)
Bex	-1.4	no	mobility temperature coefficient
Ucex	2.0	no	Longitudinal critical field temperature exponent
Ibbt	0.0	no	Ibb temperature coefficient (1/K)
Hdif	0.9e-6	no	heavily doped diffusion length (m)
Rsh	990.0	no	drain/source diffusion sheet resistance (Ohm/square)
Rsc	0.0	no	source contact resistance (Ohm)
Rdc	0.0	no	drain contact resistance (Ohm)
Cgso	1.5e-10	no	gate to source overlap capacitance (F/m)
Cgdo	1.5e-10	no	gate to drain overlap capacitance (F/m)
Cgbo	4.0e-10	no	gate to bulk overlap capacitance (F/m)
Iba	0.0	no	first impact ionization coefficient (1/m)
Ibb	3.0e8	no	second impact ionization coefficient (V/m)
Ibn	1.0	no	saturation voltage factor for impact ionization
Kf	1.0e-28	no	flicker noise coefficient
Af	1.0	no	flicker noise exponent
Avto	0.0	no	area related theshold voltage mismatch parameter (V*m)
Akp	0.0	no	area related gain mismatch parameter (m)
Agamma	0.0	no	area related body effect mismatch parameter (sqrt(V)*m)
N	1.0	no	emission coefficient
Is	1e-14	no	saturation current (A)
Bv	100	no	reverse breakdown voltage (V)
Ibv	1e-3	no	current at reverse breakdown voltage (A)
Vj	1.0	no	junction potential (V)
Cj0	300e-15	no	zero-bias junction capacitance (F)
M	0.5	no	grading coefficient
Area	1.0	no	diode relative area
Fc	0.5	no	forward-bias depletion capacitance coefficient
Tt	0.1e-9	no	transit time (s)
Xti	3.0	no	saturation current temperature exponent
Xpart	0.4	no	charge partition parameter
Tnom	26.85	no	parameter measurement temperature (Celsius)
Temp	26.85	no	simulation temperature

Bsim3V34Nmos¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	bsim3v34nMOS
Description	bsim3v34nMOS verilog device
Schematic entry	`bsim3v34nMOS`
Netlist entry	`BSIM3_`
Type	AnalogComponent
Bitmap file	bsim3v34nMOS
Properties	408
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Value	Display	Description
L	0.35e-6	no	-
W	5.0e-6	no	-
PS	8.0e-6	no	-
PD	8.0e-6	no	-
AS	12.0e-12	no	-
AD	12.0e-12	no	-
NRS	10.0	no	-
NRD	10.0	no	-
NQSMOD	0	no	-
GMIN	1e-12	no	-
VERSION	3.24	no	-
PARAMCHK	0	no	-
MOBMOD	1	no	-
CAPMOD	3	no	-
NOIMOD	4	no	-
BINUNIT	1	no	-
TOX	150.0e-10	no	-
TOXM	150.0e-10	no	-
CDSC	2.4e-4	no	-
CDSCB	0.0	no	-
CDSCD	0.0	no	-
CIT	0.0	no	-
NFACTOR	1	no	-
XJ	0.15e-6	no	-
VSAT	8.0e4	no	-
AT	3.3e4	no	-
A0	1.0	no	-
AGS	0.0	no	-
A1	0.0	no	-
A2	1.0	no	-
KETA	-0.047	no	-
NSUB	-99.0	no	-
NCH	-99.0	no	-
NGATE	0	no	-
GAMMA1	-99.0	no	-
GAMMA2	-99.0	no	-
VBX	-99.0	no	-
VBM	-3.0	no	-
XT	-99.0	no	-
K1	-99.0	no	-
KT1	-0.11	no	-
KT1L	0.0	no	-
KT2	0.022	no	-
K2	-99.0	no	-
K3	80.0	no	-
K3B	0.0	no	-
W0	2.5e-6	no	-
NLX	1.74e-7	no	-
DVT0	2.2	no	-
DVT1	0.53	no	-
DVT2	-0.032	no	-
DVT0W	0.0	no	-
DVT1W	5.3e6	no	-
DVT2W	-0.032	no	-
DROUT	0.56	no	-
DSUB	0.56	no	-
VTHO	0.7	no	-
VTH0	0.7	no	-
UA	2.25e-9	no	-
UA1	4.31e-9	no	-
UB	5.87e-19	no	-
UB1	-7.61e-18	no	-
UC	-99.0	no	-
UC1	-99.0	no	-
U0	-99.0	no	-
UTE	-1.5	no	-
VOFF	-0.08	no	-
TNOM	26.85	no	-
CGSO	-99.0	no	-
CGDO	-99.0	no	-
CGBO	-99.0	no	-
XPART	0.4	no	-
ELM	5.0	no	-
DELTA	0.01	no	-
RSH	0.0	no	-
RDSW	0	no	-
PRWG	0.0	no	-
PRWB	0.0	no	-
PRT	0.0	no	-
ETA0	0.08	no	-
ETAB	-0.07	no	-
PCLM	1.3	no	-
PDIBLC1	0.39	no	-
PDIBLC2	0.0086	no	-
PDIBLCB	0.0	no	-
PSCBE1	4.24e8	no	-
PSCBE2	1.0e-5	no	-
PVAG	0.0	no	-
JS	1.0E-4	no	-
JSW	0.0	no	-
PB	1.0	no	-
NJ	1.0	no	-
XTI	3.0	no	-
MJ	0.5	no	-
PBSW	1.0	no	-
MJSW	0.33	no	-
PBSWG	1.0	no	-
MJSWG	0.33	no	-
CJ	5.0E-4	no	-
VFBCV	-1.0	no	-
VFB	-99.0	no	-
CJSW	5.0E-10	no	-
CJSWG	5.0e-10	no	-
TPB	0.0	no	-
TCJ	0.0	no	-
TPBSW	0.0	no	-
TCJSW	0.0	no	-
TPBSWG	0.0	no	-
TCJSWG	0.0	no	-
ACDE	1.0	no	-
MOIN	15.0	no	-
NOFF	1.0	no	-
VOFFCV	0.0	no	-
LINT	0.0	no	-
LL	0.0	no	-
LLC	0.0	no	-
LLN	1.0	no	-
LW	0.0	no	-
LWC	0.0	no	-
LWN	1.0	no	-
LWL	0.0	no	-
LWLC	0.0	no	-
LMIN	0.0	no	-
LMAX	1.0	no	-
WR	1.0	no	-
WINT	0.0	no	-
DWG	0.0	no	-
DWB	0.0	no	-
WL	0.0	no	-
WLC	0.0	no	-
WLN	1.0	no	-
WW	0.0	no	-
WWC	0.0	no	-
WWN	1.0	no	-
WWL	0.0	no	-
WWLC	0.0	no	-
WMIN	0.0	no	-
WMAX	1.0	no	-
B0	0.0	no	-
B1	0.0	no	-
CGSL	0.0	no	-
CGDL	0.0	no	-
CKAPPA	0.6	no	-
CF	-99.0	no	-
CLC	0.1e-6	no	-
CLE	0.6	no	-
DWC	0.0	no	-
DLC	-99.0	no	-
ALPHA0	0.0	no	-
ALPHA1	0.0	no	-
BETA0	30.0	no	-
IJTH	0.1	no	-
LCDSC	0.0	no	-
LCDSCB	0.0	no	-
LCDSCD	0.0	no	-
LCIT	0.0	no	-
LNFACTOR	0.0	no	-
LXJ	0.0	no	-
LVSAT	0.0	no	-
LAT	0.0	no	-
LA0	0.0	no	-
LAGS	0.0	no	-
LA1	0.0	no	-
LA2	0.0	no	-
LKETA	0.0	no	-
LNSUB	0.0	no	-
LNCH	0.0	no	-
LNGATE	0.0	no	-
LGAMMA1	-99.0	no	-
LGAMMA2	-99.0	no	-
LVBX	-99.0	no	-
LVBM	0.0	no	-
LXT	0.0	no	-
LK1	-99.0	no	-
LKT1	0.0	no	-
LKT1L	0.0	no	-
LKT2	0.0	no	-
LK2	-99.0	no	-
LK3	0.0	no	-
LK3B	0.0	no	-
LW0	0.0	no	-
LNLX	0.0	no	-
LDVT0	0.0	no	-
LDVT1	0.0	no	-
LDVT2	0.0	no	-
LDVT0W	0.0	no	-
LDVT1W	0.0	no	-
LDVT2W	0.0	no	-
LDROUT	0.0	no	-
LDSUB	0.0	no	-
LVTH0	0.0	no	-
LVTHO	0.0	no	-
LUA	0.0	no	-
LUA1	0.0	no	-
LUB	0.0	no	-
LUB1	0.0	no	-
LUC	0.0	no	-
LUC1	0.0	no	-
LU0	0.0	no	-
LUTE	0.0	no	-
LVOFF	0.0	no	-
LELM	0.0	no	-
LDELTA	0.0	no	-
LRDSW	0.0	no	-
LPRWG	0.0	no	-
LPRWB	0.0	no	-
LPRT	0.0	no	-
LETA0	0.0	no	-
LETAB	0.0	no	-
LPCLM	0.0	no	-
LPDIBLC1	0.0	no	-
LPDIBLC2	0.0	no	-
LPDIBLCB	0.0	no	-
LPSCBE1	0.0	no	-
LPSCBE2	0.0	no	-
LPVAG	0.0	no	-
LWR	0.0	no	-
LDWG	0.0	no	-
LDWB	0.0	no	-
LB0	0.0	no	-
LB1	0.0	no	-
LCGSL	0.0	no	-
LCGDL	0.0	no	-
LCKAPPA	0.0	no	-
LCF	0.0	no	-
LCLC	0.0	no	-
LCLE	0.0	no	-
LALPHA0	0.0	no	-
LALPHA1	0.0	no	-
LBETA0	0.0	no	-
LVFBCV	0.0	no	-
LVFB	0.0	no	-
LACDE	0.0	no	-
LMOIN	0.0	no	-
LNOFF	0.0	no	-
LVOFFCV	0.0	no	-
WCDSC	0.0	no	-
WCDSCB	0.0	no	-
WCDSCD	0.0	no	-
WCIT	0.0	no	-
WNFACTOR	0.0	no	-
WXJ	0.0	no	-
WVSAT	0.0	no	-
WAT	0.0	no	-
WA0	0.0	no	-
WAGS	0.0	no	-
WA1	0.0	no	-
WA2	0.0	no	-
WKETA	0.0	no	-
WNSUB	0.0	no	-
WNCH	0.0	no	-
WNGATE	0.0	no	-
WGAMMA1	-99.0	no	-
WGAMMA2	-99.0	no	-
WVBX	-99.0	no	-
WVBM	0.0	no	-
WXT	0.0	no	-
WK1	-99.0	no	-
WKT1	0.0	no	-
WKT1L	0.0	no	-
WKT2	0.0	no	-
WK2	-99.0	no	-
WK3	0.0	no	-
WK3B	0.0	no	-
WW0	0.0	no	-
WNLX	0.0	no	-
WDVT0	0.0	no	-
WDVT1	0.0	no	-
WDVT2	0.0	no	-
WDVT0W	0.0	no	-
WDVT1W	0.0	no	-
WDVT2W	0.0	no	-
WDROUT	0.0	no	-
WDSUB	0.0	no	-
WVTH0	0.0	no	-
WVTHO	0.0	no	-
WUA	0.0	no	-
WUA1	0.0	no	-
WUB	0.0	no	-
WUB1	0.0	no	-
WUC	0.0	no	-
WUC1	0.0	no	-
WU0	0.0	no	-
WUTE	0.0	no	-
WVOFF	0.0	no	-
WELM	0.0	no	-
WDELTA	0.0	no	-
WRDSW	0.0	no	-
WPRWG	0.0	no	-
WPRWB	0.0	no	-
WPRT	0.0	no	-
WETA0	0.0	no	-
WETAB	0.0	no	-
WPCLM	0.0	no	-
WPDIBLC1	0.0	no	-
WPDIBLC2	0.0	no	-
WPDIBLCB	0.0	no	-
WPSCBE1	0.0	no	-
WPSCBE2	0.0	no	-
WPVAG	0.0	no	-
WWR	0.0	no	-
WDWG	0.0	no	-
WDWB	0.0	no	-
WB0	0.0	no	-
WB1	0.0	no	-
WCGSL	0.0	no	-
WCGDL	0.0	no	-
WCKAPPA	0.0	no	-
WCF	0.0	no	-
WCLC	0.0	no	-
WCLE	0.0	no	-
WALPHA0	0.0	no	-
WALPHA1	0.0	no	-
WBETA0	0.0	no	-
WVFBCV	0.0	no	-
WVFB	0.0	no	-
WACDE	0.0	no	-
WMOIN	0.0	no	-
WNOFF	0.0	no	-
WVOFFCV	0.0	no	-
PCDSC	0.0	no	-
PCDSCB	0.0	no	-
PCDSCD	0.0	no	-
PCIT	0.0	no	-
PNFACTOR	0.0	no	-
PXJ	0.0	no	-
PVSAT	0.0	no	-
PAT	0.0	no	-
PA0	0.0	no	-
PAGS	0.0	no	-
PA1	0.0	no	-
PA2	0.0	no	-
PKETA	0.0	no	-
PNSUB	0.0	no	-
PNCH	0.0	no	-
PNGATE	0.0	no	-
PGAMMA1	-99.0	no	-
PGAMMA2	-99.0	no	-
PVBX	-99.0	no	-
PVBM	0.0	no	-
PXT	0.0	no	-
PK1	-99.0	no	-
PKT1	0.0	no	-
PKT1L	0.0	no	-
PKT2	0.0	no	-
PK2	-99.0	no	-
PK3	0.0	no	-
PK3B	0.0	no	-
PW0	0.0	no	-
PNLX	0.0	no	-
PDVT0	0.0	no	-
PDVT1	0.0	no	-
PDVT2	0.0	no	-
PDVT0W	0.0	no	-
PDVT1W	0.0	no	-
PDVT2W	0.0	no	-
PDROUT	0.0	no	-
PDSUB	0.0	no	-
PVTH0	0.0	no	-
PVTHO	0.0	no	-
PUA	0.0	no	-
PUA1	0.0	no	-
PUB	0.0	no	-
PUB1	0.0	no	-
PUC	0.0	no	-
PUC1	0.0	no	-
PU0	0.0	no	-
PUTE	0.0	no	-
PVOFF	0.0	no	-
PELM	0.0	no	-
PDELTA	0.0	no	-
PRDSW	0.0	no	-
PPRWG	0.0	no	-
PPRWB	0.0	no	-
PPRT	0.0	no	-
PETA0	0.0	no	-
PETAB	0.0	no	-
PPCLM	0.0	no	-
PPDIBLC1	0.0	no	-
PPDIBLC2	0.0	no	-
PPDIBLCB	0.0	no	-
PPSCBE1	0.0	no	-
PPSCBE2	0.0	no	-
PPVAG	0.0	no	-
PWR	0.0	no	-
PDWG	0.0	no	-
PDWB	0.0	no	-
PB0	0.0	no	-
PB1	0.0	no	-
PCGSL	0.0	no	-
PCGDL	0.0	no	-
PCKAPPA	0.0	no	-
PCF	0.0	no	-
PCLC	0.0	no	-
PCLE	0.0	no	-
PALPHA0	0.0	no	-
PALPHA1	0.0	no	-
PBETA0	0.0	no	-
PVFBCV	0.0	no	-
PVFB	0.0	no	-
PACDE	0.0	no	-
PMOIN	0.0	no	-
PNOFF	0.0	no	-
PVOFFCV	0.0	no	-
KF	0.0	no	-
AF	1.0	no	-
EF	1.0	no	-
Temp	26.85	no	simulation temperature

Bsim3V34Pmos¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	bsim3v34pMOS
Description	bsim3v34pMOS verilog device
Schematic entry	`bsim3v34pMOS`
Netlist entry	`BSIM3_`
Type	AnalogComponent
Bitmap file	bsim3v34pMOS
Properties	408
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Value	Display	Description
L	3.5e-6	no	-
W	5.0e-6	no	-
PS	8.0e-6	no	-
PD	8.0e-6	no	-
AS	12.0e-12	no	-
AD	12.0e-12	no	-
NRS	10.0	no	-
NRD	10.0	no	-
NQSMOD	0	no	-
GMIN	1e-12	no	-
VERSION	3.24	no	-
PARAMCHK	0	no	-
MOBMOD	1	no	-
CAPMOD	3	no	-
NOIMOD	4	no	-
BINUNIT	1	no	-
TOX	150.0e-10	no	-
TOXM	150.0e-10	no	-
CDSC	2.4e-4	no	-
CDSCB	0.0	no	-
CDSCD	0.0	no	-
CIT	0.0	no	-
NFACTOR	1	no	-
XJ	0.15e-6	no	-
VSAT	8.0e4	no	-
AT	3.3e4	no	-
A0	1.0	no	-
AGS	0.0	no	-
A1	0.0	no	-
A2	1.0	no	-
KETA	-0.047	no	-
NSUB	-99.0	no	-
NCH	-99.0	no	-
NGATE	0	no	-
GAMMA1	-99.0	no	-
GAMMA2	-99.0	no	-
VBX	-99.0	no	-
VBM	-3.0	no	-
XT	-99.0	no	-
K1	-99.0	no	-
KT1	-0.11	no	-
KT1L	0.0	no	-
KT2	0.022	no	-
K2	-99.0	no	-
K3	80.0	no	-
K3B	0.0	no	-
W0	2.5e-6	no	-
NLX	1.74e-7	no	-
DVT0	2.2	no	-
DVT1	0.53	no	-
DVT2	-0.032	no	-
DVT0W	0.0	no	-
DVT1W	5.3e6	no	-
DVT2W	-0.032	no	-
DROUT	0.56	no	-
DSUB	0.56	no	-
VTHO	-0.7	no	-
VTH0	-0.7	no	-
UA	2.25e-9	no	-
UA1	4.31e-9	no	-
UB	5.87e-19	no	-
UB1	-7.61e-18	no	-
UC	-99.0	no	-
UC1	-99.0	no	-
U0	-99.0	no	-
UTE	-1.5	no	-
VOFF	-0.08	no	-
TNOM	26.85	no	-
CGSO	-99.0	no	-
CGDO	-99.0	no	-
CGBO	-99.0	no	-
XPART	0.4	no	-
ELM	5.0	no	-
DELTA	0.01	no	-
RSH	0.0	no	-
RDSW	0	no	-
PRWG	0.0	no	-
PRWB	0.0	no	-
PRT	0.0	no	-
ETA0	0.08	no	-
ETAB	-0.07	no	-
PCLM	1.3	no	-
PDIBLC1	0.39	no	-
PDIBLC2	0.0086	no	-
PDIBLCB	0.0	no	-
PSCBE1	4.24e8	no	-
PSCBE2	1.0e-5	no	-
PVAG	0.0	no	-
JS	1.0E-4	no	-
JSW	0.0	no	-
PB	1.0	no	-
NJ	1.0	no	-
XTI	3.0	no	-
MJ	0.5	no	-
PBSW	1.0	no	-
MJSW	0.33	no	-
PBSWG	1.0	no	-
MJSWG	0.33	no	-
CJ	5.0E-4	no	-
VFBCV	-1.0	no	-
VFB	-99.0	no	-
CJSW	5.0E-10	no	-
CJSWG	5.0e-10	no	-
TPB	0.0	no	-
TCJ	0.0	no	-
TPBSW	0.0	no	-
TCJSW	0.0	no	-
TPBSWG	0.0	no	-
TCJSWG	0.0	no	-
ACDE	1.0	no	-
MOIN	15.0	no	-
NOFF	1.0	no	-
VOFFCV	0.0	no	-
LINT	0.0	no	-
LL	0.0	no	-
LLC	0.0	no	-
LLN	1.0	no	-
LW	0.0	no	-
LWC	0.0	no	-
LWN	1.0	no	-
LWL	0.0	no	-
LWLC	0.0	no	-
LMIN	0.0	no	-
LMAX	1.0	no	-
WR	1.0	no	-
WINT	0.0	no	-
DWG	0.0	no	-
DWB	0.0	no	-
WL	0.0	no	-
WLC	0.0	no	-
WLN	1.0	no	-
WW	0.0	no	-
WWC	0.0	no	-
WWN	1.0	no	-
WWL	0.0	no	-
WWLC	0.0	no	-
WMIN	0.0	no	-
WMAX	1.0	no	-
B0	0.0	no	-
B1	0.0	no	-
CGSL	0.0	no	-
CGDL	0.0	no	-
CKAPPA	0.6	no	-
CF	-99.0	no	-
CLC	0.1e-6	no	-
CLE	0.6	no	-
DWC	0.0	no	-
DLC	-99.0	no	-
ALPHA0	0.0	no	-
ALPHA1	0.0	no	-
BETA0	30.0	no	-
IJTH	0.1	no	-
LCDSC	0.0	no	-
LCDSCB	0.0	no	-
LCDSCD	0.0	no	-
LCIT	0.0	no	-
LNFACTOR	0.0	no	-
LXJ	0.0	no	-
LVSAT	0.0	no	-
LAT	0.0	no	-
LA0	0.0	no	-
LAGS	0.0	no	-
LA1	0.0	no	-
LA2	0.0	no	-
LKETA	0.0	no	-
LNSUB	0.0	no	-
LNCH	0.0	no	-
LNGATE	0.0	no	-
LGAMMA1	-99.0	no	-
LGAMMA2	-99.0	no	-
LVBX	-99.0	no	-
LVBM	0.0	no	-
LXT	0.0	no	-
LK1	-99.0	no	-
LKT1	0.0	no	-
LKT1L	0.0	no	-
LKT2	0.0	no	-
LK2	-99.0	no	-
LK3	0.0	no	-
LK3B	0.0	no	-
LW0	0.0	no	-
LNLX	0.0	no	-
LDVT0	0.0	no	-
LDVT1	0.0	no	-
LDVT2	0.0	no	-
LDVT0W	0.0	no	-
LDVT1W	0.0	no	-
LDVT2W	0.0	no	-
LDROUT	0.0	no	-
LDSUB	0.0	no	-
LVTH0	0.0	no	-
LVTHO	0.0	no	-
LUA	0.0	no	-
LUA1	0.0	no	-
LUB	0.0	no	-
LUB1	0.0	no	-
LUC	0.0	no	-
LUC1	0.0	no	-
LU0	0.0	no	-
LUTE	0.0	no	-
LVOFF	0.0	no	-
LELM	0.0	no	-
LDELTA	0.0	no	-
LRDSW	0.0	no	-
LPRWG	0.0	no	-
LPRWB	0.0	no	-
LPRT	0.0	no	-
LETA0	0.0	no	-
LETAB	0.0	no	-
LPCLM	0.0	no	-
LPDIBLC1	0.0	no	-
LPDIBLC2	0.0	no	-
LPDIBLCB	0.0	no	-
LPSCBE1	0.0	no	-
LPSCBE2	0.0	no	-
LPVAG	0.0	no	-
LWR	0.0	no	-
LDWG	0.0	no	-
LDWB	0.0	no	-
LB0	0.0	no	-
LB1	0.0	no	-
LCGSL	0.0	no	-
LCGDL	0.0	no	-
LCKAPPA	0.0	no	-
LCF	0.0	no	-
LCLC	0.0	no	-
LCLE	0.0	no	-
LALPHA0	0.0	no	-
LALPHA1	0.0	no	-
LBETA0	0.0	no	-
LVFBCV	0.0	no	-
LVFB	0.0	no	-
LACDE	0.0	no	-
LMOIN	0.0	no	-
LNOFF	0.0	no	-
LVOFFCV	0.0	no	-
WCDSC	0.0	no	-
WCDSCB	0.0	no	-
WCDSCD	0.0	no	-
WCIT	0.0	no	-
WNFACTOR	0.0	no	-
WXJ	0.0	no	-
WVSAT	0.0	no	-
WAT	0.0	no	-
WA0	0.0	no	-
WAGS	0.0	no	-
WA1	0.0	no	-
WA2	0.0	no	-
WKETA	0.0	no	-
WNSUB	0.0	no	-
WNCH	0.0	no	-
WNGATE	0.0	no	-
WGAMMA1	-99.0	no	-
WGAMMA2	-99.0	no	-
WVBX	-99.0	no	-
WVBM	0.0	no	-
WXT	0.0	no	-
WK1	-99.0	no	-
WKT1	0.0	no	-
WKT1L	0.0	no	-
WKT2	0.0	no	-
WK2	-99.0	no	-
WK3	0.0	no	-
WK3B	0.0	no	-
WW0	0.0	no	-
WNLX	0.0	no	-
WDVT0	0.0	no	-
WDVT1	0.0	no	-
WDVT2	0.0	no	-
WDVT0W	0.0	no	-
WDVT1W	0.0	no	-
WDVT2W	0.0	no	-
WDROUT	0.0	no	-
WDSUB	0.0	no	-
WVTH0	0.0	no	-
WVTHO	0.0	no	-
WUA	0.0	no	-
WUA1	0.0	no	-
WUB	0.0	no	-
WUB1	0.0	no	-
WUC	0.0	no	-
WUC1	0.0	no	-
WU0	0.0	no	-
WUTE	0.0	no	-
WVOFF	0.0	no	-
WELM	0.0	no	-
WDELTA	0.0	no	-
WRDSW	0.0	no	-
WPRWG	0.0	no	-
WPRWB	0.0	no	-
WPRT	0.0	no	-
WETA0	0.0	no	-
WETAB	0.0	no	-
WPCLM	0.0	no	-
WPDIBLC1	0.0	no	-
WPDIBLC2	0.0	no	-
WPDIBLCB	0.0	no	-
WPSCBE1	0.0	no	-
WPSCBE2	0.0	no	-
WPVAG	0.0	no	-
WWR	0.0	no	-
WDWG	0.0	no	-
WDWB	0.0	no	-
WB0	0.0	no	-
WB1	0.0	no	-
WCGSL	0.0	no	-
WCGDL	0.0	no	-
WCKAPPA	0.0	no	-
WCF	0.0	no	-
WCLC	0.0	no	-
WCLE	0.0	no	-
WALPHA0	0.0	no	-
WALPHA1	0.0	no	-
WBETA0	0.0	no	-
WVFBCV	0.0	no	-
WVFB	0.0	no	-
WACDE	0.0	no	-
WMOIN	0.0	no	-
WNOFF	0.0	no	-
WVOFFCV	0.0	no	-
PCDSC	0.0	no	-
PCDSCB	0.0	no	-
PCDSCD	0.0	no	-
PCIT	0.0	no	-
PNFACTOR	0.0	no	-
PXJ	0.0	no	-
PVSAT	0.0	no	-
PAT	0.0	no	-
PA0	0.0	no	-
PAGS	0.0	no	-
PA1	0.0	no	-
PA2	0.0	no	-
PKETA	0.0	no	-
PNSUB	0.0	no	-
PNCH	0.0	no	-
PNGATE	0.0	no	-
PGAMMA1	-99.0	no	-
PGAMMA2	-99.0	no	-
PVBX	-99.0	no	-
PVBM	0.0	no	-
PXT	0.0	no	-
PK1	-99.0	no	-
PKT1	0.0	no	-
PKT1L	0.0	no	-
PKT2	0.0	no	-
PK2	-99.0	no	-
PK3	0.0	no	-
PK3B	0.0	no	-
PW0	0.0	no	-
PNLX	0.0	no	-
PDVT0	0.0	no	-
PDVT1	0.0	no	-
PDVT2	0.0	no	-
PDVT0W	0.0	no	-
PDVT1W	0.0	no	-
PDVT2W	0.0	no	-
PDROUT	0.0	no	-
PDSUB	0.0	no	-
PVTH0	0.0	no	-
PVTHO	0.0	no	-
PUA	0.0	no	-
PUA1	0.0	no	-
PUB	0.0	no	-
PUB1	0.0	no	-
PUC	0.0	no	-
PUC1	0.0	no	-
PU0	0.0	no	-
PUTE	0.0	no	-
PVOFF	0.0	no	-
PELM	0.0	no	-
PDELTA	0.0	no	-
PRDSW	0.0	no	-
PPRWG	0.0	no	-
PPRWB	0.0	no	-
PPRT	0.0	no	-
PETA0	0.0	no	-
PETAB	0.0	no	-
PPCLM	0.0	no	-
PPDIBLC1	0.0	no	-
PPDIBLC2	0.0	no	-
PPDIBLCB	0.0	no	-
PPSCBE1	0.0	no	-
PPSCBE2	0.0	no	-
PPVAG	0.0	no	-
PWR	0.0	no	-
PDWG	0.0	no	-
PDWB	0.0	no	-
PB0	0.0	no	-
PB1	0.0	no	-
PCGSL	0.0	no	-
PCGDL	0.0	no	-
PCKAPPA	0.0	no	-
PCF	0.0	no	-
PCLC	0.0	no	-
PCLE	0.0	no	-
PALPHA0	0.0	no	-
PALPHA1	0.0	no	-
PBETA0	0.0	no	-
PVFBCV	0.0	no	-
PVFB	0.0	no	-
PACDE	0.0	no	-
PMOIN	0.0	no	-
PNOFF	0.0	no	-
PVOFFCV	0.0	no	-
KF	0.0	no	-
AF	1.0	no	-
EF	1.0	no	-
Temp	26.85	no	simulation temperature

Bsim4V30Nmos¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	bsim4v30nMOS
Description	bsim4v30nMOS verilog device
Schematic entry	`bsim4v30nMOS`
Netlist entry	`BSIM4_`
Type	AnalogComponent
Bitmap file	bsim4v30nMOS
Properties	278
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Value	Display	Description
GMIN	1e-12	no	-
PS	12e-6	no	-
PD	12e-6	no	-
AS	12e-12	no	-
AD	12e-12	no	-
CGBO	-99.0	no	-
CGDO	-99.0	no	-
CGSO	-99.0	no	-
L	3e-6	no	-
W	6e-6	no	-
MOBMOD	-99.0	no	-
RDSMOD	-99.0	no	-
IGCMOD	0	no	-
IGBMOD	0	no	-
CAPMOD	2	no	-
RGATEMOD	2	no	-
RBODYMOD	0	no	-
DIOMOD	1	no	-
TEMPMOD	-99.0	no	-
GEOMOD	0	no	-
RGEOMOD	0	no	-
PERMOD	1	no	-
TNOIMOD	0	no	-
FNOIMOD	0	no	-
EPSROX	3.9	no	-
TOXE	-99.0	no	-
TOXP	-99.0	no	-
TOXM	-99.0	no	-
DTOX	0.0	no	-
XJ	1.5e-7	no	-
GAMMA1	-99.0	no	-
GAMMA2	-99.0	no	-
NDEP	-99.0	no	-
NSUB	6.0e16	no	-
NGATE	0.0	no	-
NSD	1.0e20	no	-
VBX	-99.0	no	-
XT	1.55e-7	no	-
RSH	0.0	no	-
RSHG	0.0	no	-
VTH0	0.6	no	-
VFB	-99.0	no	-
PHIN	0.0	no	-
K1	-99.0	no	-
K2	-99.0	no	-
K3	80.0	no	-
K3B	0.0	no	-
W0	2.5e-6	no	-
LPE0	1.74e-7	no	-
LPEB	0.0	no	-
VBM	-3.0	no	-
DVT0	2.2	no	-
DVT1	0.53	no	-
DVT2	-0.032	no	-
DVTP0	0.0	no	-
DVTP1	0.0	no	-
DVT0W	0.0	no	-
DVT1W	5.3e6	no	-
DVT2W	-0.032	no	-
U0	-99.0	no	-
UA	-99.0	no	-
UB	1.0e-19	no	-
UC	-99.0	no	-
EU	-99.0	no	-
VSAT	8.0e4	no	-
A0	1.0	no	-
AGS	0.0	no	-
B0	0.0	no	-
B1	0.0	no	-
KETA	-0.047	no	-
A1	0.0	no	-
A2	1.0	no	-
WINT	0.0	no	-
LINT	0.0	no	-
DWG	0.0	no	-
DWB	0.0	no	-
VOFF	-0.08	no	-
VOFFL	0.0	no	-
MINV	0.0	no	-
NFACTOR	1.0	no	-
ETA0	0.08	no	-
ETAB	-0.07	no	-
DROUT	0.56	no	-
DSUB	0.56	no	-
CIT	0.0	no	-
CDSC	2.4e-4	no	-
CDSCB	0.0	no	-
CDSCD	0.0	no	-
PCLM	1.3	no	-
PDIBL1	0.39	no	-
PDIBL2	0.0086	no	-
PDIBLB	0.0	no	-
PSCBE1	4.24e8	no	-
PSCBE2	1.0e-5	no	-
PVAG	0.0	no	-
DELTA	0.01	no	-
FPROUT	0.0	no	-
PDITS	0.0	no	-
PDITSD	0.0	no	-
PDITSL	0.0	no	-
LAMBDA	-99.0	no	-
VTL	-99.0	no	-
LC	5.0e-9	no	-
XN	3.0	no	-
RDSW	200.0	no	-
RDSWMIN	0.0	no	-
RDW	100.0	no	-
RDWMIN	0.0	no	-
RSW	100.0	no	-
RSWMIN	0.0	no	-
PRWG	1.0	no	-
PRWB	0.0	no	-
WR	1.0	no	-
NRS	-99.0	no	-
NRD	-99.0	no	-
ALPHA0	0.0	no	-
ALPHA1	0.0	no	-
BETA0	30.0	no	-
AGIDL	0.0	no	-
BGIDL	2.3e9	no	-
CGIDL	0.5	no	-
EGIDL	0.8	no	-
AIGBACC	0.43	no	-
BIGBACC	0.054	no	-
CIGBACC	0.075	no	-
NIGBACC	1.0	no	-
AIGBINV	0.35	no	-
BIGBINV	0.03	no	-
CIGBINV	0.006	no	-
EIGBINV	1.1	no	-
NIGBINV	3.0	no	-
AIGC	-99.0	no	-
BIGC	-99.0	no	-
CIGC	-99.0	no	-
AIGSD	-99.0	no	-
BIGSD	-99.0	no	-
CIGSD	-99.0	no	-
DLCIG	0.0	no	-
NIGC	1.0	no	-
POXEDGE	1.0	no	-
PIGCD	1.0	no	-
NTOX	1.0	no	-
TOXREF	3.0e-9	no	-
XPART	0.4	no	-
CGS0	0.0	no	-
CGD0	0.0	no	-
CGB0	0.0	no	-
CGSL	0.0	no	-
CGDL	0.0	no	-
CKAPPAS	0.6	no	-
CKAPPAD	0.6	no	-
CF	-99.0	no	-
CLC	1.0e-7	no	-
CLE	0.6	no	-
DLC	0.0	no	-
DWC	0.0	no	-
VFBCV	-1.0	no	-
NOFF	1.0	no	-
VOFFCV	0.0	no	-
ACDE	1.0	no	-
MOIN	15.0	no	-
XRCRG1	12.0	no	-
XRCRG2	1.0	no	-
RBPB	50.0	no	-
RBPD	50.0	no	-
RBPS	50.0	no	-
RBDB	50.0	no	-
RBSB	50.0	no	-
GBMIN	1.0e-12	no	-
DMCG	0.0	no	-
DMCI	0.0	no	-
DMDG	0.0	no	-
DMCGT	0.0	no	-
NF	1.0	no	-
DWJ	0.0	no	-
MIN	0.0	no	-
XGW	0.0	no	-
XGL	0.0	no	-
XL	0.0	no	-
XW	0.0	no	-
NGCON	1.0	no	-
IJTHSREV	0.1	no	-
IJTHDREV	0.1	no	-
IJTHSFWD	0.1	no	-
IJTHDFWD	0.1	no	-
XJBVS	1.0	no	-
XJBVD	1.0	no	-
BVS	10.0	no	-
BVD	10.0	no	-
JSS	1.0e-4	no	-
JSD	1.0e-4	no	-
JSWS	0.0	no	-
JSWD	0.0	no	-
JSWGS	0.0	no	-
JSWGD	0.0	no	-
CJS	5.0e-4	no	-
CJD	5.0e-4	no	-
MJS	0.5	no	-
MJD	0.5	no	-
MJSWS	0.33	no	-
MJSWD	0.33	no	-
CJSWS	5.0e-10	no	-
CJSWD	5.0e-10	no	-
CJSWGS	5.0e-10	no	-
CJSWGD	5.0e-10	no	-
MJSWGS	0.33	no	-
MJSWGD	0.33	no	-
PBS	1.0	no	-
PBD	1.0	no	-
PBSWS	1.0	no	-
PBSWD	1.0	no	-
PBSWGS	1.0	no	-
PBSWGD	1.0	no	-
TNOM	27	no	-
UTE	-1.5	no	-
KT1	-0.11	no	-
KT1L	0.0	no	-
KT2	0.022	no	-
UA1	1.0e-9	no	-
UB1	-1.0e-18	no	-
UC1	-99.0	no	-
AT	3.3e4	no	-
PRT	0.0	no	-
NJS	1.0	no	-
NJD	1.0	no	-
XTIS	3.0	no	-
XTID	3.0	no	-
TPB	0.0	no	-
TPBSW	0.0	no	-
TPBSWG	0.0	no	-
TCJ	0.0	no	-
TCJSW	0.0	no	-
TCJSWG	0.0	no	-
SA	0.0	no	-
SB	0.0	no	-
SD	0.0	no	-
SAREF	1e-6	no	-
SBREF	1e-6	no	-
WLOD	0.0	no	-
KU0	0.0	no	-
KVSAT	0.0	no	-
TKU0	0.0	no	-
LKU0	0.0	no	-
WKU0	0.0	no	-
PKU0	0.0	no	-
LLODKU0	0.0	no	-
WLODKU0	0.0	no	-
KVTH0	0.0	no	-
LKVTH0	0.0	no	-
WKVTH0	0.0	no	-
PKVTH0	0.0	no	-
LLODVTH	0.0	no	-
WLODVTH	0.0	no	-
STK2	0.0	no	-
LODK2	1.0	no	-
STETA0	0.0	no	-
LODETA0	1.0	no	-
WL	0.0	no	-
WLN	1.0	no	-
WW	0.0	no	-
WWN	1.0	no	-
WWL	0.0	no	-
LL	0.0	no	-
LLN	1.0	no	-
LW	0.0	no	-
LWN	1.0	no	-
LWL	0.0	no	-
LLC	0.0	no	-
LWC	0.0	no	-
LWLC	0.0	no	-
WLC	0.0	no	-
WWC	0.0	no	-
WWLC	0.0	no	-
NTNOI	1.0	no	-
KF	0.0	no	-
AF	1.0	no	-
EF	1.0	no	-
TEMP	27	no	-

Bsim4V30Pmos¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	bsim4v30pMOS
Description	bsim4v30pMOS verilog device
Schematic entry	`bsim4v30pMOS`
Netlist entry	`BSIM4_`
Type	AnalogComponent
Bitmap file	bsim4v30pMOS
Properties	278
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Value	Display	Description
GMIN	1e-12	no	-
PS	12e-6	no	-
PD	12e-6	no	-
AS	12e-12	no	-
AD	12e-12	no	-
CGBO	-99.0	no	-
CGDO	-99.0	no	-
CGSO	-99.0	no	-
L	3e-6	no	-
W	6e-6	no	-
MOBMOD	-99.0	no	-
RDSMOD	-99.0	no	-
IGCMOD	0	no	-
IGBMOD	0	no	-
CAPMOD	2	no	-
RGATEMOD	2	no	-
RBODYMOD	0	no	-
DIOMOD	1	no	-
TEMPMOD	-99.0	no	-
GEOMOD	0	no	-
RGEOMOD	0	no	-
PERMOD	1	no	-
TNOIMOD	0	no	-
FNOIMOD	0	no	-
EPSROX	3.9	no	-
TOXE	-99.0	no	-
TOXP	-99.0	no	-
TOXM	-99.0	no	-
DTOX	0.0	no	-
XJ	1.5e-7	no	-
GAMMA1	-99.0	no	-
GAMMA2	-99.0	no	-
NDEP	-99.0	no	-
NSUB	6.0e16	no	-
NGATE	0.0	no	-
NSD	1.0e20	no	-
VBX	-99.0	no	-
XT	1.55e-7	no	-
RSH	0.0	no	-
RSHG	0.0	no	-
VTH0	-0.6	no	-
VFB	-99.0	no	-
PHIN	0.0	no	-
K1	-99.0	no	-
K2	-99.0	no	-
K3	80.0	no	-
K3B	0.0	no	-
W0	2.5e-6	no	-
LPE0	1.74e-7	no	-
LPEB	0.0	no	-
VBM	-3.0	no	-
DVT0	2.2	no	-
DVT1	0.53	no	-
DVT2	-0.032	no	-
DVTP0	0.0	no	-
DVTP1	0.0	no	-
DVT0W	0.0	no	-
DVT1W	5.3e6	no	-
DVT2W	-0.032	no	-
U0	-99.0	no	-
UA	-99.0	no	-
UB	1.0e-19	no	-
UC	-99.0	no	-
EU	-99.0	no	-
VSAT	8.0e4	no	-
A0	1.0	no	-
AGS	0.0	no	-
B0	0.0	no	-
B1	0.0	no	-
KETA	-0.047	no	-
A1	0.0	no	-
A2	1.0	no	-
WINT	0.0	no	-
LINT	0.0	no	-
DWG	0.0	no	-
DWB	0.0	no	-
VOFF	-0.08	no	-
VOFFL	0.0	no	-
MINV	0.0	no	-
NFACTOR	1.0	no	-
ETA0	0.08	no	-
ETAB	-0.07	no	-
DROUT	0.56	no	-
DSUB	0.56	no	-
CIT	0.0	no	-
CDSC	2.4e-4	no	-
CDSCB	0.0	no	-
CDSCD	0.0	no	-
PCLM	1.3	no	-
PDIBL1	0.39	no	-
PDIBL2	0.0086	no	-
PDIBLB	0.0	no	-
PSCBE1	4.24e8	no	-
PSCBE2	1.0e-5	no	-
PVAG	0.0	no	-
DELTA	0.01	no	-
FPROUT	0.0	no	-
PDITS	0.0	no	-
PDITSD	0.0	no	-
PDITSL	0.0	no	-
LAMBDA	-99.0	no	-
VTL	-99.0	no	-
LC	5.0e-9	no	-
XN	3.0	no	-
RDSW	200.0	no	-
RDSWMIN	0.0	no	-
RDW	100.0	no	-
RDWMIN	0.0	no	-
RSW	100.0	no	-
RSWMIN	0.0	no	-
PRWG	1.0	no	-
PRWB	0.0	no	-
WR	1.0	no	-
NRS	-99.0	no	-
NRD	-99.0	no	-
ALPHA0	0.0	no	-
ALPHA1	0.0	no	-
BETA0	30.0	no	-
AGIDL	0.0	no	-
BGIDL	2.3e9	no	-
CGIDL	0.5	no	-
EGIDL	0.8	no	-
AIGBACC	0.43	no	-
BIGBACC	0.054	no	-
CIGBACC	0.075	no	-
NIGBACC	1.0	no	-
AIGBINV	0.35	no	-
BIGBINV	0.03	no	-
CIGBINV	0.006	no	-
EIGBINV	1.1	no	-
NIGBINV	3.0	no	-
AIGC	-99.0	no	-
BIGC	-99.0	no	-
CIGC	-99.0	no	-
AIGSD	-99.0	no	-
BIGSD	-99.0	no	-
CIGSD	-99.0	no	-
DLCIG	0.0	no	-
NIGC	1.0	no	-
POXEDGE	1.0	no	-
PIGCD	1.0	no	-
NTOX	1.0	no	-
TOXREF	3.0e-9	no	-
XPART	0.4	no	-
CGS0	0.0	no	-
CGD0	0.0	no	-
CGB0	0.0	no	-
CGSL	0.0	no	-
CGDL	0.0	no	-
CKAPPAS	0.6	no	-
CKAPPAD	0.6	no	-
CF	-99.0	no	-
CLC	1.0e-7	no	-
CLE	0.6	no	-
DLC	0.0	no	-
DWC	0.0	no	-
VFBCV	-1.0	no	-
NOFF	1.0	no	-
VOFFCV	0.0	no	-
ACDE	1.0	no	-
MOIN	15.0	no	-
XRCRG1	12.0	no	-
XRCRG2	1.0	no	-
RBPB	50.0	no	-
RBPD	50.0	no	-
RBPS	50.0	no	-
RBDB	50.0	no	-
RBSB	50.0	no	-
GBMIN	1.0e-12	no	-
DMCG	0.0	no	-
DMCI	0.0	no	-
DMDG	0.0	no	-
DMCGT	0.0	no	-
NF	1.0	no	-
DWJ	0.0	no	-
MIN	0.0	no	-
XGW	0.0	no	-
XGL	0.0	no	-
XL	0.0	no	-
XW	0.0	no	-
NGCON	1.0	no	-
IJTHSREV	0.1	no	-
IJTHDREV	0.1	no	-
IJTHSFWD	0.1	no	-
IJTHDFWD	0.1	no	-
XJBVS	1.0	no	-
XJBVD	1.0	no	-
BVS	10.0	no	-
BVD	10.0	no	-
JSS	1.0e-4	no	-
JSD	1.0e-4	no	-
JSWS	0.0	no	-
JSWD	0.0	no	-
JSWGS	0.0	no	-
JSWGD	0.0	no	-
CJS	5.0e-4	no	-
CJD	5.0e-4	no	-
MJS	0.5	no	-
MJD	0.5	no	-
MJSWS	0.33	no	-
MJSWD	0.33	no	-
CJSWS	5.0e-10	no	-
CJSWD	5.0e-10	no	-
CJSWGS	5.0e-10	no	-
CJSWGD	5.0e-10	no	-
MJSWGS	0.33	no	-
MJSWGD	0.33	no	-
PBS	1.0	no	-
PBD	1.0	no	-
PBSWS	1.0	no	-
PBSWD	1.0	no	-
PBSWGS	1.0	no	-
PBSWGD	1.0	no	-
TNOM	27	no	-
UTE	-1.5	no	-
KT1	-0.11	no	-
KT1L	0.0	no	-
KT2	0.022	no	-
UA1	1.0e-9	no	-
UB1	-1.0e-18	no	-
UC1	-99.0	no	-
AT	3.3e4	no	-
PRT	0.0	no	-
NJS	1.0	no	-
NJD	1.0	no	-
XTIS	3.0	no	-
XTID	3.0	no	-
TPB	0.0	no	-
TPBSW	0.0	no	-
TPBSWG	0.0	no	-
TCJ	0.0	no	-
TCJSW	0.0	no	-
TCJSWG	0.0	no	-
SA	0.0	no	-
SB	0.0	no	-
SD	0.0	no	-
SAREF	1e-6	no	-
SBREF	1e-6	no	-
WLOD	0.0	no	-
KU0	0.0	no	-
KVSAT	0.0	no	-
TKU0	0.0	no	-
LKU0	0.0	no	-
WKU0	0.0	no	-
PKU0	0.0	no	-
LLODKU0	0.0	no	-
WLODKU0	0.0	no	-
KVTH0	0.0	no	-
LKVTH0	0.0	no	-
WKVTH0	0.0	no	-
PKVTH0	0.0	no	-
LLODVTH	0.0	no	-
WLODVTH	0.0	no	-
STK2	0.0	no	-
LODK2	1.0	no	-
STETA0	0.0	no	-
LODETA0	1.0	no	-
WL	0.0	no	-
WLN	1.0	no	-
WW	0.0	no	-
WWN	1.0	no	-
WWL	0.0	no	-
LL	0.0	no	-
LLN	1.0	no	-
LW	0.0	no	-
LWN	1.0	no	-
LWL	0.0	no	-
LLC	0.0	no	-
LWC	0.0	no	-
LWLC	0.0	no	-
WLC	0.0	no	-
WWC	0.0	no	-
WWLC	0.0	no	-
NTNOI	1.0	no	-
KF	0.0	no	-
AF	1.0	no	-
EF	1.0	no	-
TEMP	27	no	-

Npn Hicum L0 V1.2¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	npn HICUM L0 v1.2
Description	HICUM Level 0 v1.2 verilog device
Schematic entry	`hicumL0V1p2`
Netlist entry	`T`
Type	AnalogComponent
Bitmap file	npnsub_therm
Properties	94
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Type	npn	yes	polarity [npn, pnp]
is	1.0e-16	no	(Modified) saturation current (A)
mcf	1.00	no	Non-ideality coefficient of forward collector current
mcr	1.00	no	Non-ideality coefficient of reverse collector current
vef	1.0e6	no	forward Early voltage (normalization volt.) (V)
ver	1.0e6	no	reverse Early voltage (normalization volt.) (V)
iqf	1.0e6	no	forward d.c. high-injection roll-off current (A)
fiqf	0	no	flag for turning on base related critical current
iqr	1.0e6	no	inverse d.c. high-injection roll-off current (A)
iqfh	1.0e6	no	high-injection correction current (A)
tfh	0.0	no	high-injection correction factor
ahq	0	no	Smoothing factor for the d.c. injection width
ibes	1e-18	no	BE saturation current (A)
mbe	1.0	no	BE non-ideality factor
ires	0.0	no	BE recombination saturation current (A)
mre	2.0	no	BE recombination non-ideality factor
ibcs	0.0	no	BC saturation current (A)
mbc	1.0	no	BC non-ideality factor
cje0	1.0e-20	no	Zero-bias BE depletion capacitance (F)
vde	0.9	no	BE built-in voltage (V)
ze	0.5	no	BE exponent factor
aje	2.5	no	Ratio of maximum to zero-bias value
vdedc	0.9	no	BE charge built-in voltage for d.c. transfer current (V)
zedc	0.5	no	charge BE exponent factor for d.c. transfer current
ajedc	2.5	no	BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current
t0	0.0	no	low current transit time at Vbici=0 (s)
dt0h	0.0	no	Base width modulation contribution (s)
tbvl	0.0	no	SCR width modulation contribution (s)
tef0	0.0	no	Storage time in neutral emitter (s)
gte	1.0	no	Exponent factor for emitter transit time
thcs	0.0	no	Saturation time at high current densities (s)
ahc	0.1	no	Smoothing factor for current dependence
tr	0.0	no	Storage time at inverse operation (s)
rci0	150	no	Low-field collector resistance under emitter (Ohm)
vlim	0.5	no	Voltage dividing ohmic and satur.region (V)
vpt	100	no	Punch-through voltage (V)
vces	0.1	no	Saturation voltage (V)
cjci0	1.0e-20	no	Total zero-bias BC depletion capacitance (F)
vdci	0.7	no	BC built-in voltage (V)
zci	0.333	no	BC exponent factor
vptci	100	no	Punch-through voltage of BC junction (V)
cjcx0	1.0e-20	no	Zero-bias external BC depletion capacitance (F)
vdcx	0.7	no	External BC built-in voltage (V)
zcx	0.333	no	External BC exponent factor
vptcx	100	no	Punch-through voltage (V)
fbc	1.0	no	Split factor = Cjci0/Cjc0
rbi0	0.0	no	Internal base resistance at zero-bias (Ohm)
vr0e	2.5	no	forward Early voltage (normalization volt.) (V)
vr0c	1.0e6	no	forward Early voltage (normalization volt.) (V)
fgeo	0.656	no	Geometry factor
rbx	0.0	no	External base series resistance (Ohm)
rcx	0.0	no	Emitter series resistance (Ohm)
re	0.0	no	External collector series resistance (Ohm)
itss	0.0	no	Substrate transistor transfer saturation current (A)
msf	1.0	no	Substrate transistor transfer current non-ideality factor
iscs	0.0	no	SC saturation current (A)
msc	1.0	no	SC non-ideality factor
cjs0	1.0e-20	no	Zero-bias SC depletion capacitance (F)
vds	0.3	no	SC built-in voltage (V)
zs	0.3	no	External SC exponent factor
vpts	100	no	SC punch-through voltage (V)
cbcpar	0.0	no	Collector-base isolation (overlap) capacitance (F)
cbepar	0.0	no	Emitter-base oxide capacitance (F)
eavl	0.0	no	Exponent factor
kavl	0.0	no	Prefactor
kf	0.0	no	flicker noise coefficient (M^(1-AF))
af	2.0	no	flicker noise exponent factor
vgb	1.2	no	Bandgap-voltage (V)
vge	1.17	no	Effective emitter bandgap-voltage (V)
vgc	1.17	no	Effective collector bandgap-voltage (V)
vgs	1.17	no	Effective substrate bandgap-voltage (V)
f1vg	-1.02377e-4	no	Coefficient K1 in T-dependent bandgap equation (V/K)
f2vg	4.3215e-4	no	Coefficient K2 in T-dependent bandgap equation (V/K)
alt0	0.0	no	Frist-order TC of tf0 (1/K)
kt0	0.0	no	Second-order TC of tf0 (1/K^2)
zetact	3.0	no	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	no	Exponent coefficient in BE junction current temperature dependence
zetaci	0.0	no	TC of epi-collector diffusivity
alvs	0.0	no	Relative TC of satur.drift velocity (1/K)
alces	0.0	no	Relative TC of vces (1/K)
zetarbi	0.0	no	TC of internal base resistance
zetarbx	0.0	no	TC of external base resistance
zetarcx	0.0	no	TC of external collector resistance
zetare	0.0	no	TC of emitter resistances
zetaiqf	0.0	no	TC of iqf
alkav	0.0	no	TC of avalanche prefactor (1/K)
aleav	0.0	no	TC of avalanche exponential factor (1/K)
zetarth	0.0	no	Exponent factor for temperature dependent thermal resistance
flsh	0	no	Flag for self-heating calculation
rth	0.0	no	Thermal resistance (K/W)
cth	0.0	no	Thermal capacitance (Ws/K)
tnom	27	no	Temperature for which parameters are valid (C)
dt	0.0	no	Temperature change for particular transistor (K)
Temp	27	no	simulation temperature

Pnp Hicum L0 V1.2¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	pnp HICUM L0 v1.2
Description	HICUM Level 0 v1.2 verilog device
Schematic entry	`hicumL0V1p2`
Netlist entry	`T`
Type	AnalogComponent
Bitmap file	pnpsub_therm
Properties	94
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Type	pnp	yes	polarity [npn, pnp]
is	1.0e-16	no	(Modified) saturation current (A)
mcf	1.00	no	Non-ideality coefficient of forward collector current
mcr	1.00	no	Non-ideality coefficient of reverse collector current
vef	1.0e6	no	forward Early voltage (normalization volt.) (V)
ver	1.0e6	no	reverse Early voltage (normalization volt.) (V)
iqf	1.0e6	no	forward d.c. high-injection roll-off current (A)
fiqf	0	no	flag for turning on base related critical current
iqr	1.0e6	no	inverse d.c. high-injection roll-off current (A)
iqfh	1.0e6	no	high-injection correction current (A)
tfh	0.0	no	high-injection correction factor
ahq	0	no	Smoothing factor for the d.c. injection width
ibes	1e-18	no	BE saturation current (A)
mbe	1.0	no	BE non-ideality factor
ires	0.0	no	BE recombination saturation current (A)
mre	2.0	no	BE recombination non-ideality factor
ibcs	0.0	no	BC saturation current (A)
mbc	1.0	no	BC non-ideality factor
cje0	1.0e-20	no	Zero-bias BE depletion capacitance (F)
vde	0.9	no	BE built-in voltage (V)
ze	0.5	no	BE exponent factor
aje	2.5	no	Ratio of maximum to zero-bias value
vdedc	0.9	no	BE charge built-in voltage for d.c. transfer current (V)
zedc	0.5	no	charge BE exponent factor for d.c. transfer current
ajedc	2.5	no	BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current
t0	0.0	no	low current transit time at Vbici=0 (s)
dt0h	0.0	no	Base width modulation contribution (s)
tbvl	0.0	no	SCR width modulation contribution (s)
tef0	0.0	no	Storage time in neutral emitter (s)
gte	1.0	no	Exponent factor for emitter transit time
thcs	0.0	no	Saturation time at high current densities (s)
ahc	0.1	no	Smoothing factor for current dependence
tr	0.0	no	Storage time at inverse operation (s)
rci0	150	no	Low-field collector resistance under emitter (Ohm)
vlim	0.5	no	Voltage dividing ohmic and satur.region (V)
vpt	100	no	Punch-through voltage (V)
vces	0.1	no	Saturation voltage (V)
cjci0	1.0e-20	no	Total zero-bias BC depletion capacitance (F)
vdci	0.7	no	BC built-in voltage (V)
zci	0.333	no	BC exponent factor
vptci	100	no	Punch-through voltage of BC junction (V)
cjcx0	1.0e-20	no	Zero-bias external BC depletion capacitance (F)
vdcx	0.7	no	External BC built-in voltage (V)
zcx	0.333	no	External BC exponent factor
vptcx	100	no	Punch-through voltage (V)
fbc	1.0	no	Split factor = Cjci0/Cjc0
rbi0	0.0	no	Internal base resistance at zero-bias (Ohm)
vr0e	2.5	no	forward Early voltage (normalization volt.) (V)
vr0c	1.0e6	no	forward Early voltage (normalization volt.) (V)
fgeo	0.656	no	Geometry factor
rbx	0.0	no	External base series resistance (Ohm)
rcx	0.0	no	Emitter series resistance (Ohm)
re	0.0	no	External collector series resistance (Ohm)
itss	0.0	no	Substrate transistor transfer saturation current (A)
msf	1.0	no	Substrate transistor transfer current non-ideality factor
iscs	0.0	no	SC saturation current (A)
msc	1.0	no	SC non-ideality factor
cjs0	1.0e-20	no	Zero-bias SC depletion capacitance (F)
vds	0.3	no	SC built-in voltage (V)
zs	0.3	no	External SC exponent factor
vpts	100	no	SC punch-through voltage (V)
cbcpar	0.0	no	Collector-base isolation (overlap) capacitance (F)
cbepar	0.0	no	Emitter-base oxide capacitance (F)
eavl	0.0	no	Exponent factor
kavl	0.0	no	Prefactor
kf	0.0	no	flicker noise coefficient (M^(1-AF))
af	2.0	no	flicker noise exponent factor
vgb	1.2	no	Bandgap-voltage (V)
vge	1.17	no	Effective emitter bandgap-voltage (V)
vgc	1.17	no	Effective collector bandgap-voltage (V)
vgs	1.17	no	Effective substrate bandgap-voltage (V)
f1vg	-1.02377e-4	no	Coefficient K1 in T-dependent bandgap equation (V/K)
f2vg	4.3215e-4	no	Coefficient K2 in T-dependent bandgap equation (V/K)
alt0	0.0	no	Frist-order TC of tf0 (1/K)
kt0	0.0	no	Second-order TC of tf0 (1/K^2)
zetact	3.0	no	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	no	Exponent coefficient in BE junction current temperature dependence
zetaci	0.0	no	TC of epi-collector diffusivity
alvs	0.0	no	Relative TC of satur.drift velocity (1/K)
alces	0.0	no	Relative TC of vces (1/K)
zetarbi	0.0	no	TC of internal base resistance
zetarbx	0.0	no	TC of external base resistance
zetarcx	0.0	no	TC of external collector resistance
zetare	0.0	no	TC of emitter resistances
zetaiqf	0.0	no	TC of iqf
alkav	0.0	no	TC of avalanche prefactor (1/K)
aleav	0.0	no	TC of avalanche exponential factor (1/K)
zetarth	0.0	no	Exponent factor for temperature dependent thermal resistance
flsh	0	no	Flag for self-heating calculation
rth	0.0	no	Thermal resistance (K/W)
cth	0.0	no	Thermal capacitance (Ws/K)
tnom	27	no	Temperature for which parameters are valid (C)
dt	0.0	no	Temperature change for particular transistor (K)
Temp	27	no	simulation temperature

Npn Hicum L0 V1.2G¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	npn HICUM L0 v1.2g
Description	HICUM Level 0 v1.2g verilog device
Schematic entry	`hicumL0V1p2g`
Netlist entry	`T`
Type	AnalogComponent
Bitmap file	npnsub_therm
Properties	99
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Type	npn	yes	polarity [npn, pnp]
is	1.0e-16	no	(Modified) saturation current (A)
mcf	1.00	no	Non-ideality coefficient of forward collector current
mcr	1.00	no	Non-ideality coefficient of reverse collector current
vef	1.0e6	no	forward Early voltage (normalization volt.) (V)
ver	1.0e6	no	reverse Early voltage (normalization volt.) (V)
iqf	1.0e6	no	forward d.c. high-injection roll-off current (A)
fiqf	0	no	flag for turning on base related critical current
iqr	1.0e6	no	inverse d.c. high-injection roll-off current (A)
iqfh	1.0e6	no	high-injection correction current (A)
iqfe	0.0	no	high-injection roll-off current
ahq	0.0	no	Smoothing factor for the d.c. injection width
ibes	1e-18	no	BE saturation current (A)
mbe	1.0	no	BE non-ideality factor
ires	0.0	no	BE recombination saturation current (A)
mre	2.0	no	BE recombination non-ideality factor
ibcs	0.0	no	BC saturation current (A)
mbc	1.0	no	BC non-ideality factor
cje0	1.0e-20	no	Zero-bias BE depletion capacitance (F)
vde	0.9	no	BE built-in voltage (V)
ze	0.5	no	BE exponent factor
aje	2.5	no	Ratio of maximum to zero-bias value
vdedc	0.9	no	BE charge built-in voltage for d.c. transfer current (V)
zedc	0.5	no	charge BE exponent factor for d.c. transfer current
ajedc	2.5	no	BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current
t0	0.0	no	low current transit time at Vbici=0 (s)
dt0h	0.0	no	Base width modulation contribution (s)
tbvl	0.0	no	SCR width modulation contribution (s)
tef0	0.0	no	Storage time in neutral emitter (s)
gte	1.0	no	Exponent factor for emitter transit time
thcs	0.0	no	Saturation time at high current densities (s)
ahc	0.1	no	Smoothing factor for current dependence
tr	0.0	no	Storage time at inverse operation (s)
rci0	150	no	Low-field collector resistance under emitter (Ohm)
vlim	0.5	no	Voltage dividing ohmic and satur.region (V)
vpt	100.0	no	Punch-through voltage (V)
vces	0.1	no	Saturation voltage (V)
cjci0	1.0e-20	no	Total zero-bias BC depletion capacitance (F)
vdci	0.7	no	BC built-in voltage (V)
zci	0.333	no	BC exponent factor
vptci	100.0	no	Punch-through voltage of BC junction (V)
cjcx0	1.0e-20	no	Zero-bias external BC depletion capacitance (F)
vdcx	0.7	no	External BC built-in voltage (V)
zcx	0.333	no	External BC exponent factor
vptcx	100.0	no	Punch-through voltage (V)
fbc	1.0	no	Split factor = Cjci0/Cjc0
rbi0	0.0	no	Internal base resistance at zero-bias (Ohm)
vr0e	2.5	no	forward Early voltage (normalization volt.) (V)
vr0c	1.0e6	no	forward Early voltage (normalization volt.) (V)
fgeo	0.656	no	Geometry factor
rbx	0.0	no	External base series resistance (Ohm)
rcx	0.0	no	Emitter series resistance (Ohm)
re	0.0	no	External collector series resistance (Ohm)
itss	0.0	no	Substrate transistor transfer saturation current (A)
msf	1.0	no	Substrate transistor transfer current non-ideality factor
iscs	0.0	no	SC saturation current (A)
msc	1.0	no	SC non-ideality factor
cjs0	1.0e-20	no	Zero-bias SC depletion capacitance (F)
vds	0.3	no	SC built-in voltage (V)
zs	0.3	no	External SC exponent factor
vpts	100.0	no	SC punch-through voltage (V)
cbcpar	0.0	no	Collector-base isolation (overlap) capacitance (F)
cbepar	0.0	no	Emitter-base oxide capacitance (F)
eavl	0.0	no	Exponent factor
kavl	0.0	no	Prefactor
kf	0.0	no	flicker noise coefficient (M^(1-AF))
af	2.0	no	flicker noise exponent factor
vgb	1.2	no	Bandgap-voltage (V)
vge	1.17	no	Effective emitter bandgap-voltage (V)
vgc	1.17	no	Effective collector bandgap-voltage (V)
vgs	1.17	no	Effective substrate bandgap-voltage (V)
f1vg	-1.02377e-4	no	Coefficient K1 in T-dependent bandgap equation (V/K)
f2vg	4.3215e-4	no	Coefficient K2 in T-dependent bandgap equation (V/K)
alt0	0.0	no	Frist-order TC of tf0 (1/K)
kt0	0.0	no	Second-order TC of tf0 (1/K^2)
zetact	3.0	no	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	no	Exponent coefficient in BE junction current temperature dependence
zetaci	0.0	no	TC of epi-collector diffusivity
alvs	0.0	no	Relative TC of satur.drift velocity (1/K)
alces	0.0	no	Relative TC of vces (1/K)
zetarbi	0.0	no	TC of internal base resistance
zetarbx	0.0	no	TC of external base resistance
zetarcx	0.0	no	TC of external collector resistance
zetare	0.0	no	TC of emitter resistances
zetaiqf	0.0	no	TC of iqf (bandgap coefficient of zero bias hole charge)
alkav	0.0	no	TC of avalanche prefactor, identical to alfav of Hicum/L2 (1/K)
aleav	0.0	no	TC of avalanche exponential factor, identical to alqav of Hicum/L2 (1/K)
flsh	0	no	Flag for self-heating calculation
rth	0.0	no	Thermal resistance (K/W)
zetarth	0.0	no	Exponent factor for temperature dependent thermal resistance
cth	0.0	no	Thermal capacitance (Ws/K)
tnom	27	no	Temperature for which parameters are valid (C)
dt	0.0	no	Temperature change for particular transistor (K)
delte	0.0	no	Emitter part coefficient of the zero bias hole charge temperature variation
deltc	0.0	no	Collector part coefficient of the zero bias hole charge temperature variation
zetaver	0.0	no	Bandgap TC parameter of ver
zetavef	0.0	no	Bandgap TC parameter of vef
ibhrec	0.0	no	Specific recombination current at the BC barrier for high forward injection (A)
Temp	27	no	simulation temperature

Pnp Hicum L0 V1.2G¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	pnp HICUM L0 v1.2g
Description	HICUM Level 0 v1.2g verilog device
Schematic entry	`hicumL0V1p2g`
Netlist entry	`T`
Type	AnalogComponent
Bitmap file	pnpsub_therm
Properties	99
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Type	pnp	yes	polarity [npn, pnp]
is	1.0e-16	no	(Modified) saturation current (A)
mcf	1.00	no	Non-ideality coefficient of forward collector current
mcr	1.00	no	Non-ideality coefficient of reverse collector current
vef	1.0e6	no	forward Early voltage (normalization volt.) (V)
ver	1.0e6	no	reverse Early voltage (normalization volt.) (V)
iqf	1.0e6	no	forward d.c. high-injection roll-off current (A)
fiqf	0	no	flag for turning on base related critical current
iqr	1.0e6	no	inverse d.c. high-injection roll-off current (A)
iqfh	1.0e6	no	high-injection correction current (A)
iqfe	0.0	no	high-injection roll-off current
ahq	0.0	no	Smoothing factor for the d.c. injection width
ibes	1e-18	no	BE saturation current (A)
mbe	1.0	no	BE non-ideality factor
ires	0.0	no	BE recombination saturation current (A)
mre	2.0	no	BE recombination non-ideality factor
ibcs	0.0	no	BC saturation current (A)
mbc	1.0	no	BC non-ideality factor
cje0	1.0e-20	no	Zero-bias BE depletion capacitance (F)
vde	0.9	no	BE built-in voltage (V)
ze	0.5	no	BE exponent factor
aje	2.5	no	Ratio of maximum to zero-bias value
vdedc	0.9	no	BE charge built-in voltage for d.c. transfer current (V)
zedc	0.5	no	charge BE exponent factor for d.c. transfer current
ajedc	2.5	no	BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current
t0	0.0	no	low current transit time at Vbici=0 (s)
dt0h	0.0	no	Base width modulation contribution (s)
tbvl	0.0	no	SCR width modulation contribution (s)
tef0	0.0	no	Storage time in neutral emitter (s)
gte	1.0	no	Exponent factor for emitter transit time
thcs	0.0	no	Saturation time at high current densities (s)
ahc	0.1	no	Smoothing factor for current dependence
tr	0.0	no	Storage time at inverse operation (s)
rci0	150	no	Low-field collector resistance under emitter (Ohm)
vlim	0.5	no	Voltage dividing ohmic and satur.region (V)
vpt	100.0	no	Punch-through voltage (V)
vces	0.1	no	Saturation voltage (V)
cjci0	1.0e-20	no	Total zero-bias BC depletion capacitance (F)
vdci	0.7	no	BC built-in voltage (V)
zci	0.333	no	BC exponent factor
vptci	100.0	no	Punch-through voltage of BC junction (V)
cjcx0	1.0e-20	no	Zero-bias external BC depletion capacitance (F)
vdcx	0.7	no	External BC built-in voltage (V)
zcx	0.333	no	External BC exponent factor
vptcx	100.0	no	Punch-through voltage (V)
fbc	1.0	no	Split factor = Cjci0/Cjc0
rbi0	0.0	no	Internal base resistance at zero-bias (Ohm)
vr0e	2.5	no	forward Early voltage (normalization volt.) (V)
vr0c	1.0e6	no	forward Early voltage (normalization volt.) (V)
fgeo	0.656	no	Geometry factor
rbx	0.0	no	External base series resistance (Ohm)
rcx	0.0	no	Emitter series resistance (Ohm)
re	0.0	no	External collector series resistance (Ohm)
itss	0.0	no	Substrate transistor transfer saturation current (A)
msf	1.0	no	Substrate transistor transfer current non-ideality factor
iscs	0.0	no	SC saturation current (A)
msc	1.0	no	SC non-ideality factor
cjs0	1.0e-20	no	Zero-bias SC depletion capacitance (F)
vds	0.3	no	SC built-in voltage (V)
zs	0.3	no	External SC exponent factor
vpts	100.0	no	SC punch-through voltage (V)
cbcpar	0.0	no	Collector-base isolation (overlap) capacitance (F)
cbepar	0.0	no	Emitter-base oxide capacitance (F)
eavl	0.0	no	Exponent factor
kavl	0.0	no	Prefactor
kf	0.0	no	flicker noise coefficient (M^(1-AF))
af	2.0	no	flicker noise exponent factor
vgb	1.2	no	Bandgap-voltage (V)
vge	1.17	no	Effective emitter bandgap-voltage (V)
vgc	1.17	no	Effective collector bandgap-voltage (V)
vgs	1.17	no	Effective substrate bandgap-voltage (V)
f1vg	-1.02377e-4	no	Coefficient K1 in T-dependent bandgap equation (V/K)
f2vg	4.3215e-4	no	Coefficient K2 in T-dependent bandgap equation (V/K)
alt0	0.0	no	Frist-order TC of tf0 (1/K)
kt0	0.0	no	Second-order TC of tf0 (1/K^2)
zetact	3.0	no	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	no	Exponent coefficient in BE junction current temperature dependence
zetaci	0.0	no	TC of epi-collector diffusivity
alvs	0.0	no	Relative TC of satur.drift velocity (1/K)
alces	0.0	no	Relative TC of vces (1/K)
zetarbi	0.0	no	TC of internal base resistance
zetarbx	0.0	no	TC of external base resistance
zetarcx	0.0	no	TC of external collector resistance
zetare	0.0	no	TC of emitter resistances
zetaiqf	0.0	no	TC of iqf (bandgap coefficient of zero bias hole charge)
alkav	0.0	no	TC of avalanche prefactor, identical to alfav of Hicum/L2 (1/K)
aleav	0.0	no	TC of avalanche exponential factor, identical to alqav of Hicum/L2 (1/K)
flsh	0	no	Flag for self-heating calculation
rth	0.0	no	Thermal resistance (K/W)
zetarth	0.0	no	Exponent factor for temperature dependent thermal resistance
cth	0.0	no	Thermal capacitance (Ws/K)
tnom	27	no	Temperature for which parameters are valid (C)
dt	0.0	no	Temperature change for particular transistor (K)
delte	0.0	no	Emitter part coefficient of the zero bias hole charge temperature variation
deltc	0.0	no	Collector part coefficient of the zero bias hole charge temperature variation
zetaver	0.0	no	Bandgap TC parameter of ver
zetavef	0.0	no	Bandgap TC parameter of vef
ibhrec	0.0	no	Specific recombination current at the BC barrier for high forward injection (A)
Temp	27	no	simulation temperature

Npn Hicum L0 V1.3¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	npn HICUM L0 v1.3
Description	HICUM Level 0 v1.3 verilog device
Schematic entry	`hicumL0V1p3`
Netlist entry	`T`
Type	AnalogComponent
Bitmap file	pnpsub_therm
Properties	102
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Type	npn	yes	polarity [npn, pnp]
is	1.0e-16	no	(Modified) saturation current (A)
it_mod	0	no	Flag for using third order solution for transfer current
mcf	1.00	no	Non-ideality coefficient of forward collector current
mcr	1.00	no	Non-ideality coefficient of reverse collector current
vef	1.0e6	no	forward Early voltage (normalization volt.) (V)
ver	1.0e6	no	reverse Early voltage (normalization volt.) (V)
aver	0.0	no	bias dependence for reverse Early voltage
iqf	1.0e6	no	forward d.c. high-injection roll-off current (A)
fiqf	0	no	flag for turning on base related critical current
iqr	1.0e6	no	inverse d.c. high-injection roll-off current (A)
iqfh	1.0e6	no	high-injection correction current (A)
tfh	0.0	no	high-injection correction factor
ahq	0	no	Smoothing factor for the d.c. injection width
ibes	1e-18	no	BE saturation current (A)
mbe	1.0	no	BE non-ideality factor
ires	0.0	no	BE recombination saturation current (A)
mre	2.0	no	BE recombination non-ideality factor
ibcs	0.0	no	BC saturation current (A)
mbc	1.0	no	BC non-ideality factor
cje0	1.0e-20	no	Zero-bias BE depletion capacitance (F)
vde	0.9	no	BE built-in voltage (V)
ze	0.5	no	BE exponent factor
aje	2.5	no	Ratio of maximum to zero-bias value
vdedc	0.9	no	BE charge built-in voltage for d.c. transfer current (V)
zedc	0.5	no	charge BE exponent factor for d.c. transfer current
ajedc	2.5	no	BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current
t0	0.0	no	low current transit time at Vbici=0 (s)
dt0h	0.0	no	Base width modulation contribution (s)
tbvl	0.0	no	SCR width modulation contribution (s)
tef0	0.0	no	Storage time in neutral emitter (s)
gte	1.0	no	Exponent factor for emitter transit time
thcs	0.0	no	Saturation time at high current densities (s)
ahc	0.1	no	Smoothing factor for current dependence
tr	0.0	no	Storage time at inverse operation (s)
rci0	150	no	Low-field collector resistance under emitter (Ohm)
vlim	0.5	no	Voltage dividing ohmic and satur.region (V)
vpt	100	no	Punch-through voltage (V)
vces	0.1	no	Saturation voltage (V)
cjci0	1.0e-20	no	Total zero-bias BC depletion capacitance (F)
vdci	0.7	no	BC built-in voltage (V)
zci	0.333	no	BC exponent factor
vptci	100	no	Punch-through voltage of BC junction (V)
cjcx0	1.0e-20	no	Zero-bias external BC depletion capacitance (F)
vdcx	0.7	no	External BC built-in voltage (V)
zcx	0.333	no	External BC exponent factor
vptcx	100	no	Punch-through voltage (V)
fbc	1.0	no	Split factor = Cjci0/Cjc0
rbi0	0.0	no	Internal base resistance at zero-bias (Ohm)
vr0e	2.5	no	forward Early voltage (normalization volt.) (V)
vr0c	1.0e6	no	forward Early voltage (normalization volt.) (V)
fgeo	0.656	no	Geometry factor
rbx	0.0	no	External base series resistance (Ohm)
rcx	0.0	no	Emitter series resistance (Ohm)
re	0.0	no	External collector series resistance (Ohm)
itss	0.0	no	Substrate transistor transfer saturation current (A)
msf	1.0	no	Substrate transistor transfer current non-ideality factor
iscs	0.0	no	SC saturation current (A)
msc	1.0	no	SC non-ideality factor
cjs0	1.0e-20	no	Zero-bias SC depletion capacitance (F)
vds	0.3	no	SC built-in voltage (V)
zs	0.3	no	External SC exponent factor
vpts	100	no	SC punch-through voltage (V)
cbcpar	0.0	no	Collector-base isolation (overlap) capacitance (F)
cbepar	0.0	no	Emitter-base oxide capacitance (F)
eavl	0.0	no	Exponent factor
kavl	0.0	no	Prefactor
kf	0.0	no	flicker noise coefficient (M^(1-AF))
af	2.0	no	flicker noise exponent factor
vgb	1.2	no	Bandgap-voltage (V)
vge	1.17	no	Effective emitter bandgap-voltage (V)
vgc	1.17	no	Effective collector bandgap-voltage (V)
vgs	1.17	no	Effective substrate bandgap-voltage (V)
f1vg	-1.02377e-4	no	Coefficient K1 in T-dependent bandgap equation (V/K)
f2vg	4.3215e-4	no	Coefficient K2 in T-dependent bandgap equation (V/K)
alt0	0.0	no	Frist-order TC of tf0 (1/K)
kt0	0.0	no	Second-order TC of tf0 (1/K^2)
zetact	3.0	no	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	no	Exponent coefficient in BE junction current temperature dependence
zetaci	0.0	no	TC of epi-collector diffusivity
alvs	0.0	no	Relative TC of satur.drift velocity (1/K)
alces	0.0	no	Relative TC of vces (1/K)
zetarbi	0.0	no	TC of internal base resistance
zetarbx	0.0	no	TC of external base resistance
zetarcx	0.0	no	TC of external collector resistance
zetare	0.0	no	TC of emitter resistances
zetaiqf	0.0	no	TC of iqf
alkav	0.0	no	TC of avalanche prefactor (1/K)
aleav	0.0	no	TC of avalanche exponential factor (1/K)
zetarth	0.0	no	Exponent factor for temperature dependent thermal resistance
tef_temp	1	no	Flag for turning temperature dependence of tef0 on and off
zetaver	-1.0	no	TC of Reverse Early voltage
zetavgbe	1.0	no	TC of AVER
dvgbe	0.0	no	Bandgap difference between base and BE-junction
aliqfh	0	no	Frist-order TC of iqfh (1/K)
kiqfh	0	no	Second-order TC of iqfh (1/K^2)
flsh	0	no	Flag for self-heating calculation
rth	0.0	no	Thermal resistance (K/W)
cth	0.0	no	Thermal capacitance (Ws/K)
tnom	27	no	Temperature for which parameters are valid (C)
dt	0.0	no	Temperature change for particular transistor (K)
Temp	27	no	simulation temperature

Pnp Hicum L0 V1.3¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	pnp HICUM L0 v1.3
Description	HICUM Level 0 v1.3 verilog device
Schematic entry	`hicumL0V1p3`
Netlist entry	`T`
Type	AnalogComponent
Bitmap file	pnpsub_therm
Properties	102
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Type	pnp	yes	polarity [npn, pnp]
is	1.0e-16	no	(Modified) saturation current (A)
it_mod	0	no	Flag for using third order solution for transfer current
mcf	1.00	no	Non-ideality coefficient of forward collector current
mcr	1.00	no	Non-ideality coefficient of reverse collector current
vef	1.0e6	no	forward Early voltage (normalization volt.) (V)
ver	1.0e6	no	reverse Early voltage (normalization volt.) (V)
aver	0.0	no	bias dependence for reverse Early voltage
iqf	1.0e6	no	forward d.c. high-injection roll-off current (A)
fiqf	0	no	flag for turning on base related critical current
iqr	1.0e6	no	inverse d.c. high-injection roll-off current (A)
iqfh	1.0e6	no	high-injection correction current (A)
tfh	0.0	no	high-injection correction factor
ahq	0	no	Smoothing factor for the d.c. injection width
ibes	1e-18	no	BE saturation current (A)
mbe	1.0	no	BE non-ideality factor
ires	0.0	no	BE recombination saturation current (A)
mre	2.0	no	BE recombination non-ideality factor
ibcs	0.0	no	BC saturation current (A)
mbc	1.0	no	BC non-ideality factor
cje0	1.0e-20	no	Zero-bias BE depletion capacitance (F)
vde	0.9	no	BE built-in voltage (V)
ze	0.5	no	BE exponent factor
aje	2.5	no	Ratio of maximum to zero-bias value
vdedc	0.9	no	BE charge built-in voltage for d.c. transfer current (V)
zedc	0.5	no	charge BE exponent factor for d.c. transfer current
ajedc	2.5	no	BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current
t0	0.0	no	low current transit time at Vbici=0 (s)
dt0h	0.0	no	Base width modulation contribution (s)
tbvl	0.0	no	SCR width modulation contribution (s)
tef0	0.0	no	Storage time in neutral emitter (s)
gte	1.0	no	Exponent factor for emitter transit time
thcs	0.0	no	Saturation time at high current densities (s)
ahc	0.1	no	Smoothing factor for current dependence
tr	0.0	no	Storage time at inverse operation (s)
rci0	150	no	Low-field collector resistance under emitter (Ohm)
vlim	0.5	no	Voltage dividing ohmic and satur.region (V)
vpt	100	no	Punch-through voltage (V)
vces	0.1	no	Saturation voltage (V)
cjci0	1.0e-20	no	Total zero-bias BC depletion capacitance (F)
vdci	0.7	no	BC built-in voltage (V)
zci	0.333	no	BC exponent factor
vptci	100	no	Punch-through voltage of BC junction (V)
cjcx0	1.0e-20	no	Zero-bias external BC depletion capacitance (F)
vdcx	0.7	no	External BC built-in voltage (V)
zcx	0.333	no	External BC exponent factor
vptcx	100	no	Punch-through voltage (V)
fbc	1.0	no	Split factor = Cjci0/Cjc0
rbi0	0.0	no	Internal base resistance at zero-bias (Ohm)
vr0e	2.5	no	forward Early voltage (normalization volt.) (V)
vr0c	1.0e6	no	forward Early voltage (normalization volt.) (V)
fgeo	0.656	no	Geometry factor
rbx	0.0	no	External base series resistance (Ohm)
rcx	0.0	no	Emitter series resistance (Ohm)
re	0.0	no	External collector series resistance (Ohm)
itss	0.0	no	Substrate transistor transfer saturation current (A)
msf	1.0	no	Substrate transistor transfer current non-ideality factor
iscs	0.0	no	SC saturation current (A)
msc	1.0	no	SC non-ideality factor
cjs0	1.0e-20	no	Zero-bias SC depletion capacitance (F)
vds	0.3	no	SC built-in voltage (V)
zs	0.3	no	External SC exponent factor
vpts	100	no	SC punch-through voltage (V)
cbcpar	0.0	no	Collector-base isolation (overlap) capacitance (F)
cbepar	0.0	no	Emitter-base oxide capacitance (F)
eavl	0.0	no	Exponent factor
kavl	0.0	no	Prefactor
kf	0.0	no	flicker noise coefficient (M^(1-AF))
af	2.0	no	flicker noise exponent factor
vgb	1.2	no	Bandgap-voltage (V)
vge	1.17	no	Effective emitter bandgap-voltage (V)
vgc	1.17	no	Effective collector bandgap-voltage (V)
vgs	1.17	no	Effective substrate bandgap-voltage (V)
f1vg	-1.02377e-4	no	Coefficient K1 in T-dependent bandgap equation (V/K)
f2vg	4.3215e-4	no	Coefficient K2 in T-dependent bandgap equation (V/K)
alt0	0.0	no	Frist-order TC of tf0 (1/K)
kt0	0.0	no	Second-order TC of tf0 (1/K^2)
zetact	3.0	no	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	no	Exponent coefficient in BE junction current temperature dependence
zetaci	0.0	no	TC of epi-collector diffusivity
alvs	0.0	no	Relative TC of satur.drift velocity (1/K)
alces	0.0	no	Relative TC of vces (1/K)
zetarbi	0.0	no	TC of internal base resistance
zetarbx	0.0	no	TC of external base resistance
zetarcx	0.0	no	TC of external collector resistance
zetare	0.0	no	TC of emitter resistances
zetaiqf	0.0	no	TC of iqf
alkav	0.0	no	TC of avalanche prefactor (1/K)
aleav	0.0	no	TC of avalanche exponential factor (1/K)
zetarth	0.0	no	Exponent factor for temperature dependent thermal resistance
tef_temp	1	no	Flag for turning temperature dependence of tef0 on and off
zetaver	-1.0	no	TC of Reverse Early voltage
zetavgbe	1.0	no	TC of AVER
dvgbe	0.0	no	Bandgap difference between base and BE-junction
aliqfh	0	no	Frist-order TC of iqfh (1/K)
kiqfh	0	no	Second-order TC of iqfh (1/K^2)
flsh	0	no	Flag for self-heating calculation
rth	0.0	no	Thermal resistance (K/W)
cth	0.0	no	Thermal capacitance (Ws/K)
tnom	27	no	Temperature for which parameters are valid (C)
dt	0.0	no	Temperature change for particular transistor (K)
Temp	27	no	simulation temperature

Hicum L2 V2.23¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	HICUM L2 v2.23
Description	HICUM Level 2 v2.23 verilog device
Schematic entry	`hicumL2V2p23`
Netlist entry	`T`
Type	AnalogComponent
Bitmap file	npnsub_therm
Properties	114
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Value	Display	Description
c10	2.0E-30	no	GICCR constant (A^2s)
qp0	2.0E-14	no	Zero-bias hole charge (Coul)
ich	0.0	no	High-current correction for 2D and 3D effects (A)
hfe	1.0	no	Emitter minority charge weighting factor in HBTs
hfc	1.0	no	Collector minority charge weighting factor in HBTs
hjei	1.0	no	B-E depletion charge weighting factor in HBTs
hjci	1.0	no	B-C depletion charge weighting factor in HBTs
ibeis	1.0E-18	no	Internal B-E saturation current (A)
mbei	1.0	no	Internal B-E current ideality factor
ireis	0.0	no	Internal B-E recombination saturation current (A)
mrei	2.0	no	Internal B-E recombination current ideality factor
ibeps	0.0	no	Peripheral B-E saturation current (A)
mbep	1.0	no	Peripheral B-E current ideality factor
ireps	0.0	no	Peripheral B-E recombination saturation current (A)
mrep	2.0	no	Peripheral B-E recombination current ideality factor
mcf	1.0	no	Non-ideality factor for III-V HBTs
tbhrec	0.0	no	Base current recombination time constant at B-C barrier for high forward injection (s)
ibcis	1.0E-16	no	Internal B-C saturation current (A)
mbci	1.0	no	Internal B-C current ideality factor
ibcxs	0.0	no	External B-C saturation current (A)
mbcx	1.0	no	External B-C current ideality factor
ibets	0.0	no	B-E tunneling saturation current (A)
abet	40	no	Exponent factor for tunneling current
tunode	1	no	Specifies the base node connection for the tunneling current
favl	0.0	no	Avalanche current factor (1/V)
qavl	0.0	no	Exponent factor for avalanche current (Coul)
alfav	0.0	no	Relative TC for FAVL (1/K)
alqav	0.0	no	Relative TC for QAVL (1/K)
rbi0	0.0	no	Zero bias internal base resistance (Ohm)
rbx	0.0	no	External base series resistance (Ohm)
fgeo	0.6557	no	Factor for geometry dependence of emitter current crowding
fdqr0	0.0	no	Correction factor for modulation by B-E and B-C space charge layer
fcrbi	0.0	no	Ratio of HF shunt to total internal capacitance (lateral NQS effect)
fqi	1.0	no	Ration of internal to total minority charge
re	0.0	no	Emitter series resistance (Ohm)
rcx	0.0	no	External collector series resistance (Ohm)
itss	0.0	no	Substrate transistor transfer saturation current (A)
msf	1.0	no	Forward ideality factor of substrate transfer current
iscs	0.0	no	C-S diode saturation current (A)
msc	1.0	no	Ideality factor of C-S diode current
tsf	0.0	no	Transit time for forward operation of substrate transistor (s)
rsu	0.0	no	Substrate series resistance (Ohm)
csu	0.0	no	Substrate shunt capacitance (F)
cjei0	1.0E-20	no	Internal B-E zero-bias depletion capacitance (F)
vdei	0.9	no	Internal B-E built-in potential (V)
zei	0.5	no	Internal B-E grading coefficient
ajei	2.5	no	Ratio of maximum to zero-bias value of internal B-E capacitance
cjep0	1.0E-20	no	Peripheral B-E zero-bias depletion capacitance (F)
vdep	0.9	no	Peripheral B-E built-in potential (V)
zep	0.5	no	Peripheral B-E grading coefficient
ajep	2.5	no	Ratio of maximum to zero-bias value of peripheral B-E capacitance
cjci0	1.0E-20	no	Internal B-C zero-bias depletion capacitance (F)
vdci	0.7	no	Internal B-C built-in potential (V)
zci	0.4	no	Internal B-C grading coefficient
vptci	100	no	Internal B-C punch-through voltage (V)
cjcx0	1.0E-20	no	External B-C zero-bias depletion capacitance (F)
vdcx	0.7	no	External B-C built-in potential (V)
zcx	0.4	no	External B-C grading coefficient
vptcx	100	no	External B-C punch-through voltage (V)
fbcpar	0.0	no	Partitioning factor of parasitic B-C cap
fbepar	1.0	no	Partitioning factor of parasitic B-E cap
cjs0	0.0	no	C-S zero-bias depletion capacitance (F)
vds	0.6	no	C-S built-in potential (V)
zs	0.5	no	C-S grading coefficient
vpts	100	no	C-S punch-through voltage (V)
t0	0.0	no	Low current forward transit time at VBC=0V (s)
dt0h	0.0	no	Time constant for base and B-C space charge layer width modulation (s)
tbvl	0.0	no	Time constant for modelling carrier jam at low VCE (s)
tef0	0.0	no	Neutral emitter storage time (s)
gtfe	1.0	no	Exponent factor for current dependence of neutral emitter storage time
thcs	0.0	no	Saturation time constant at high current densities (s)
ahc	0.1	no	Smoothing factor for current dependence of base and collector transit time
fthc	0.0	no	Partitioning factor for base and collector portion
rci0	150	no	Internal collector resistance at low electric field (Ohm)
vlim	0.5	no	Voltage separating ohmic and saturation velocity regime (V)
vces	0.1	no	Internal C-E saturation voltage (V)
vpt	0.0	no	Collector punch-through voltage (V)
tr	0.0	no	Storage time for inverse operation (s)
cbepar	0.0	no	Total parasitic B-E capacitance (F)
cbcpar	0.0	no	Total parasitic B-C capacitance (F)
alqf	0.0	no	Factor for additional delay time of minority charge
alit	0.0	no	Factor for additional delay time of transfer current
flnqs	0	no	Flag for turning on and off of vertical NQS effect
kf	0.0	no	Flicker noise coefficient
af	2.0	no	Flicker noise exponent factor
cfbe	-1	no	Flag for determining where to tag the flicker noise source
latb	0.0	no	Scaling factor for collector minority charge in direction of emitter width
latl	0.0	no	Scaling factor for collector minority charge in direction of emitter length
vgb	1.17	no	Bandgap voltage extrapolated to 0 K (V)
alt0	0.0	no	First order relative TC of parameter T0 (1/K)
kt0	0.0	no	Second order relative TC of parameter T0
zetaci	0.0	no	Temperature exponent for RCI0
alvs	0.0	no	Relative TC of saturation drift velocity (1/K)
alces	0.0	no	Relative TC of VCES (1/K)
zetarbi	0.0	no	Temperature exponent of internal base resistance
zetarbx	0.0	no	Temperature exponent of external base resistance
zetarcx	0.0	no	Temperature exponent of external collector resistance
zetare	0.0	no	Temperature exponent of emitter resistance
zetacx	1.0	no	Temperature exponent of mobility in substrate transistor transit time
vge	1.17	no	Effective emitter bandgap voltage (V)
vgc	1.17	no	Effective collector bandgap voltage (V)
vgs	1.17	no	Effective substrate bandgap voltage (V)
f1vg	-1.02377e-4	no	Coefficient K1 in T-dependent band-gap equation
f2vg	4.3215e-4	no	Coefficient K2 in T-dependent band-gap equation
zetact	3.0	no	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	no	Exponent coefficient in B-E junction current temperature dependence
alb	0.0	no	Relative TC of forward current gain for V2.1 model (1/K)
flsh	0	no	Flag for turning on and off self-heating effect
rth	0.0	no	Thermal resistance (K/W)
cth	0.0	no	Thermal capacitance (J/W)
flcomp	0.0	no	Flag for compatibility with v2.1 model (0=v2.1)
tnom	27.0	no	Temperature at which parameters are specified (C)
dt	0.0	no	Temperature change w.r.t. chip temperature for particular transistor (K)
Temp	27	no	simulation temperature

Hicum L2 V2.24¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	HICUM L2 v2.24
Description	HICUM Level 2 v2.24 verilog device
Schematic entry	`hicumL2V2p24`
Netlist entry	`T`
Type	AnalogComponent
Bitmap file	npnsub_therm
Properties	114
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Value	Display	Description
c10	2.0E-30	no	GICCR constant (A^2s)
qp0	2.0E-14	no	Zero-bias hole charge (Coul)
ich	0.0	no	High-current correction for 2D and 3D effects (A)
hfe	1.0	no	Emitter minority charge weighting factor in HBTs
hfc	1.0	no	Collector minority charge weighting factor in HBTs
hjei	1.0	no	B-E depletion charge weighting factor in HBTs
hjci	1.0	no	B-C depletion charge weighting factor in HBTs
ibeis	1.0E-18	no	Internal B-E saturation current (A)
mbei	1.0	no	Internal B-E current ideality factor
ireis	0.0	no	Internal B-E recombination saturation current (A)
mrei	2.0	no	Internal B-E recombination current ideality factor
ibeps	0.0	no	Peripheral B-E saturation current (A)
mbep	1.0	no	Peripheral B-E current ideality factor
ireps	0.0	no	Peripheral B-E recombination saturation current (A)
mrep	2.0	no	Peripheral B-E recombination current ideality factor
mcf	1.0	no	Non-ideality factor for III-V HBTs
tbhrec	0.0	no	Base current recombination time constant at B-C barrier for high forward injection (s)
ibcis	1.0E-16	no	Internal B-C saturation current (A)
mbci	1.0	no	Internal B-C current ideality factor
ibcxs	0.0	no	External B-C saturation current (A)
mbcx	1.0	no	External B-C current ideality factor
ibets	0.0	no	B-E tunneling saturation current (A)
abet	40	no	Exponent factor for tunneling current
tunode	1	no	Specifies the base node connection for the tunneling current
favl	0.0	no	Avalanche current factor (1/V)
qavl	0.0	no	Exponent factor for avalanche current (Coul)
alfav	0.0	no	Relative TC for FAVL (1/K)
alqav	0.0	no	Relative TC for QAVL (1/K)
rbi0	0.0	no	Zero bias internal base resistance (Ohm)
rbx	0.0	no	External base series resistance (Ohm)
fgeo	0.6557	no	Factor for geometry dependence of emitter current crowding
fdqr0	0.0	no	Correction factor for modulation by B-E and B-C space charge layer
fcrbi	0.0	no	Ratio of HF shunt to total internal capacitance (lateral NQS effect)
fqi	1.0	no	Ration of internal to total minority charge
re	0.0	no	Emitter series resistance (Ohm)
rcx	0.0	no	External collector series resistance (Ohm)
itss	0.0	no	Substrate transistor transfer saturation current (A)
msf	1.0	no	Forward ideality factor of substrate transfer current
iscs	0.0	no	C-S diode saturation current (A)
msc	1.0	no	Ideality factor of C-S diode current
tsf	0.0	no	Transit time for forward operation of substrate transistor (s)
rsu	0.0	no	Substrate series resistance (Ohm)
csu	0.0	no	Substrate shunt capacitance (F)
cjei0	1.0E-20	no	Internal B-E zero-bias depletion capacitance (F)
vdei	0.9	no	Internal B-E built-in potential (V)
zei	0.5	no	Internal B-E grading coefficient
ajei	2.5	no	Ratio of maximum to zero-bias value of internal B-E capacitance
cjep0	1.0E-20	no	Peripheral B-E zero-bias depletion capacitance (F)
vdep	0.9	no	Peripheral B-E built-in potential (V)
zep	0.5	no	Peripheral B-E grading coefficient
ajep	2.5	no	Ratio of maximum to zero-bias value of peripheral B-E capacitance
cjci0	1.0E-20	no	Internal B-C zero-bias depletion capacitance (F)
vdci	0.7	no	Internal B-C built-in potential (V)
zci	0.4	no	Internal B-C grading coefficient
vptci	100	no	Internal B-C punch-through voltage (V)
cjcx0	1.0E-20	no	External B-C zero-bias depletion capacitance (F)
vdcx	0.7	no	External B-C built-in potential (V)
zcx	0.4	no	External B-C grading coefficient
vptcx	100	no	External B-C punch-through voltage (V)
fbcpar	0.0	no	Partitioning factor of parasitic B-C cap
fbepar	1.0	no	Partitioning factor of parasitic B-E cap
cjs0	0.0	no	C-S zero-bias depletion capacitance (F)
vds	0.6	no	C-S built-in potential (V)
zs	0.5	no	C-S grading coefficient
vpts	100	no	C-S punch-through voltage (V)
t0	0.0	no	Low current forward transit time at VBC=0V (s)
dt0h	0.0	no	Time constant for base and B-C space charge layer width modulation (s)
tbvl	0.0	no	Time constant for modelling carrier jam at low VCE (s)
tef0	0.0	no	Neutral emitter storage time (s)
gtfe	1.0	no	Exponent factor for current dependence of neutral emitter storage time
thcs	0.0	no	Saturation time constant at high current densities (s)
ahc	0.1	no	Smoothing factor for current dependence of base and collector transit time
fthc	0.0	no	Partitioning factor for base and collector portion
rci0	150	no	Internal collector resistance at low electric field (Ohm)
vlim	0.5	no	Voltage separating ohmic and saturation velocity regime (V)
vces	0.1	no	Internal C-E saturation voltage (V)
vpt	100.0	no	Collector punch-through voltage (V)
tr	0.0	no	Storage time for inverse operation (s)
cbepar	0.0	no	Total parasitic B-E capacitance (F)
cbcpar	0.0	no	Total parasitic B-C capacitance (F)
alqf	0.0	no	Factor for additional delay time of minority charge
alit	0.0	no	Factor for additional delay time of transfer current
flnqs	0	no	Flag for turning on and off of vertical NQS effect
kf	0.0	no	Flicker noise coefficient
af	2.0	no	Flicker noise exponent factor
cfbe	-1	no	Flag for determining where to tag the flicker noise source
latb	0.0	no	Scaling factor for collector minority charge in direction of emitter width
latl	0.0	no	Scaling factor for collector minority charge in direction of emitter length
vgb	1.17	no	Bandgap voltage extrapolated to 0 K (V)
alt0	0.0	no	First order relative TC of parameter T0 (1/K)
kt0	0.0	no	Second order relative TC of parameter T0
zetaci	0.0	no	Temperature exponent for RCI0
alvs	0.0	no	Relative TC of saturation drift velocity (1/K)
alces	0.0	no	Relative TC of VCES (1/K)
zetarbi	0.0	no	Temperature exponent of internal base resistance
zetarbx	0.0	no	Temperature exponent of external base resistance
zetarcx	0.0	no	Temperature exponent of external collector resistance
zetare	0.0	no	Temperature exponent of emitter resistance
zetacx	1.0	no	Temperature exponent of mobility in substrate transistor transit time
vge	1.17	no	Effective emitter bandgap voltage (V)
vgc	1.17	no	Effective collector bandgap voltage (V)
vgs	1.17	no	Effective substrate bandgap voltage (V)
f1vg	-1.02377e-4	no	Coefficient K1 in T-dependent band-gap equation
f2vg	4.3215e-4	no	Coefficient K2 in T-dependent band-gap equation
zetact	3.0	no	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	no	Exponent coefficient in B-E junction current temperature dependence
alb	0.0	no	Relative TC of forward current gain for V2.1 model (1/K)
flsh	0	no	Flag for turning on and off self-heating effect
rth	0.0	no	Thermal resistance (K/W)
cth	0.0	no	Thermal capacitance (J/W)
flcomp	0.0	no	Flag for compatibility with v2.1 model (0=v2.1)
tnom	27.0	no	Temperature at which parameters are specified (C)
dt	0.0	no	Temperature change w.r.t. chip temperature for particular transistor (K)
Temp	27.0	no	simulation temperature

Hicum L2 V2.31¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	HICUM L2 V2.31
Description	hicumL2V2p31n verilog device
Schematic entry	`hicumL2V2p31n`
Netlist entry	`T`
Type	AnalogComponent
Bitmap file	hicumL2V2p31n
Properties	129
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Value	Display	Description
c10	2.0E-30	no	GICCR constant (A^2s)
qp0	2.0E-14	no	Zero-bias hole charge (Coul)
ich	0.0	no	High-current correction for 2D and 3D effects (A)
hf0	1.0	no	Weight factor for the low current minority charge
hfe	1.0	no	Emitter minority charge weighting factor in HBTs
hfc	1.0	no	Collector minority charge weighting factor in HBTs
hjei	1.0	no	B-E depletion charge weighting factor in HBTs
ahjei	0.0	no	Parameter describing the slope of hjEi(VBE)
rhjei	1.0	no	Smoothing parameter for hjEi(VBE) at high voltage
hjci	1.0	no	B-C depletion charge weighting factor in HBTs
ibeis	1.0E-18	no	Internal B-E saturation current (A)
mbei	1.0	no	Internal B-E current ideality factor
ireis	0.0	no	Internal B-E recombination saturation current (A)
mrei	2.0	no	Internal B-E recombination current ideality factor
ibeps	0.0	no	Peripheral B-E saturation current (A)
mbep	1.0	no	Peripheral B-E current ideality factor
ireps	0.0	no	Peripheral B-E recombination saturation current (A)
mrep	2.0	no	Peripheral B-E recombination current ideality factor
mcf	1.0	no	Non-ideality factor for III-V HBTs
tbhrec	0.0	no	Base current recombination time constant at B-C barrier for high forward injection (s)
ibcis	1.0E-16	no	Internal B-C saturation current (A)
mbci	1.0	no	Internal B-C current ideality factor
ibcxs	0.0	no	External B-C saturation current (A)
mbcx	1.0	no	External B-C current ideality factor
ibets	0.0	no	B-E tunneling saturation current (A)
abet	40	no	Exponent factor for tunneling current
tunode	1	no	Specifies the base node connection for the tunneling current
favl	0.0	no	Avalanche current factor (1/V)
qavl	0.0	no	Exponent factor for avalanche current (Coul)
alfav	0.0	no	Relative TC for FAVL (1/K)
alqav	0.0	no	Relative TC for QAVL (1/K)
rbi0	0.0	no	Zero bias internal base resistance (Ohm)
rbx	0.0	no	External base series resistance (Ohm)
fgeo	0.6557	no	Factor for geometry dependence of emitter current crowding
fdqr0	0.0	no	Correction factor for modulation by B-E and B-C space charge layer
fcrbi	0.0	no	Ratio of HF shunt to total internal capacitance (lateral NQS effect)
fqi	1.0	no	Ration of internal to total minority charge
re	0.0	no	Emitter series resistance (Ohm)
rcx	0.0	no	External collector series resistance (Ohm)
itss	0.0	no	Substrate transistor transfer saturation current (A)
msf	1.0	no	Forward ideality factor of substrate transfer current
iscs	0.0	no	C-S diode saturation current (A)
msc	1.0	no	Ideality factor of C-S diode current
tsf	0.0	no	Transit time for forward operation of substrate transistor (s)
rsu	0.0	no	Substrate series resistance (Ohm)
csu	0.0	no	Substrate shunt capacitance (F)
cjei0	1.0E-20	no	Internal B-E zero-bias depletion capacitance (F)
vdei	0.9	no	Internal B-E built-in potential (V)
zei	0.5	no	Internal B-E grading coefficient
ajei	2.5	no	Ratio of maximum to zero-bias value of internal B-E capacitance
cjep0	1.0E-20	no	Peripheral B-E zero-bias depletion capacitance (F)
vdep	0.9	no	Peripheral B-E built-in potential (V)
zep	0.5	no	Peripheral B-E grading coefficient
ajep	2.5	no	Ratio of maximum to zero-bias value of peripheral B-E capacitance
cjci0	1.0E-20	no	Internal B-C zero-bias depletion capacitance (F)
vdci	0.7	no	Internal B-C built-in potential (V)
zci	0.4	no	Internal B-C grading coefficient
vptci	100	no	Internal B-C punch-through voltage (V)
cjcx0	1.0E-20	no	External B-C zero-bias depletion capacitance (F)
vdcx	0.7	no	External B-C built-in potential (V)
zcx	0.4	no	External B-C grading coefficient
vptcx	100	no	External B-C punch-through voltage (V)
fbcpar	0.0	no	Partitioning factor of parasitic B-C cap
fbepar	1.0	no	Partitioning factor of parasitic B-E cap
cjs0	0.0	no	C-S zero-bias depletion capacitance (F)
vds	0.6	no	C-S built-in potential (V)
zs	0.5	no	C-S grading coefficient
vpts	100	no	C-S punch-through voltage (V)
t0	0.0	no	Low current forward transit time at VBC=0V (s)
dt0h	0.0	no	Time constant for base and B-C space charge layer width modulation (s)
tbvl	0.0	no	Time constant for modeling carrier jam at low VCE (s)
tef0	0.0	no	Neutral emitter storage time (s)
gtfe	1.0	no	Exponent factor for current dependence of neutral emitter storage time
thcs	0.0	no	Saturation time constant at high current densities (s)
ahc	0.1	no	Smoothing factor for current dependence of base and collector transit time
fthc	0.0	no	Partitioning factor for base and collector portion
rci0	150	no	Internal collector resistance at low electric field (Ohm)
vlim	0.5	no	Voltage separating ohmic and saturation velocity regime (V)
vces	0.1	no	Internal C-E saturation voltage (V)
vpt	100.0	no	Collector punch-through voltage (V)
tr	0.0	no	Storage time for inverse operation (s)
vcbar	0.0	no	Barrier voltage (V)
icbar	0.0	no	Normalization parameter (A)
acbar	0.01	no	Smoothing parameter for barrier voltage
delck	2.0	no	fitting factor for critical current
cbepar	0.0	no	Total parasitic B-E capacitance (F)
cbcpar	0.0	no	Total parasitic B-C capacitance (F)
alqf	0.167	no	Factor for additional delay time of minority charge
alit	0.333	no	Factor for additional delay time of transfer current
flnqs	0	no	Flag for turning on and off of vertical NQS effect
kf	0.0	no	Flicker noise coefficient
af	2.0	no	Flicker noise exponent factor
cfbe	-1	no	Flag for determining where to tag the flicker noise source
flcono	0	no	Flag for turning on and off of correlated noise implementation
kfre	0.0	no	Emitter resistance flicker noise coefficient
afre	2.0	no	Emitter resistance flicker noise exponent factor
latb	0.0	no	Scaling factor for collector minority charge in direction of emitter width
latl	0.0	no	Scaling factor for collector minority charge in direction of emitter length
vgb	1.17	no	Bandgap voltage extrapolated to 0 K (V)
alt0	0.0	no	First order relative TC of parameter T0 (1/K)
kt0	0.0	no	Second order relative TC of parameter T0
zetaci	0.0	no	Temperature exponent for RCI0
alvs	0.0	no	Relative TC of saturation drift velocity (1/K)
alces	0.0	no	Relative TC of VCES (1/K)
zetarbi	0.0	no	Temperature exponent of internal base resistance
zetarbx	0.0	no	Temperature exponent of external base resistance
zetarcx	0.0	no	Temperature exponent of external collector resistance
zetare	0.0	no	Temperature exponent of emitter resistance
zetacx	1.0	no	Temperature exponent of mobility in substrate transistor transit time
vge	1.17	no	Effective emitter bandgap voltage (V)
vgc	1.17	no	Effective collector bandgap voltage (V)
vgs	1.17	no	Effective substrate bandgap voltage (V)
f1vg	-1.02377e-4	no	Coefficient K1 in T-dependent band-gap equation
f2vg	4.3215e-4	no	Coefficient K2 in T-dependent band-gap equation
zetact	3.0	no	Exponent coefficient in transfer current temperature dependence
zetabet	3.5	no	Exponent coefficient in B-E junction current temperature dependence
alb	0.0	no	Relative TC of forward current gain for V2.1 model (1/K)
dvgbe	0	no	Bandgap difference between B and B-E junction used for hjEi0 and hf0 (V)
zetahjei	1	no	Temperature coefficient for ahjEi
zetavgbe	1	no	Temperature coefficient for hjEi0
flsh	0	no	Flag for turning on and off self-heating effect
rth	0.0	no	Thermal resistance (K/W)
zetarth	0.0	no	Temperature coefficient for Rth
alrth	0.0	no	First order relative TC of parameter Rth (1/K)
cth	0.0	no	Thermal capacitance (J/W)
flcomp	0.0	no	Flag for compatibility with v2.1 model (0=v2.1)
tnom	27.0	no	Temperature at which parameters are specified (C)
dt	0.0	no	Temperature change w.r.t. chip temperature for particular transistor (K)
Temp	27.0	no	simulation temperature

Photodiode¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Photodiode
Description	Photodiode verilog device
Schematic entry	`photodiode`
Netlist entry	`PD`
Type	AnalogComponent
Bitmap file	photodiode
Properties	23
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Value	Display	Description
N	1.35	no	photodiode emission coefficient
Rseries	1e-3	no	series lead resistance (Ohm)
Is	0.34e-12	no	diode dark current (A)
Bv	60	no	reverse breakdown voltage (V)
Ibv	1e-3	no	current at reverse breakdown voltage (A)
Vj	0.7	no	junction potential (V)
Cj0	60e-12	no	zero-bias junction capacitance (F)
M	0.5	no	grading coefficient
Area	1.0	no	diode relative area
Tnom	26.85	no	parameter measurement temperature (Celsius)
Fc	0.5	no	forward-bias depletion capacitance coefficient
Tt	10e-9	no	transit time (s)
Xti	3.0	no	saturation current temperature exponent
Eg	1.16	no	energy gap (eV)
Responsivity	0.5	no	responsivity (A/W)
Rsh	5e8	no	shunt resistance (Ohm)
QEpercent	80	no	quantum efficiency (%)
Lambda	900	no	light wavelength (nm)
LEVEL	1	no	responsivity calculator selector
Kf	1e-12	no	flicker noise coefficient
Af	1.0	no	flicker noise exponent
Ffe	1.0	no	flicker noise frequency exponent
Temp	26.85	no	simulation temperature

Phototransistor¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Phototransistor
Description	Phototransistor verilog device
Schematic entry	`phototransistor`
Netlist entry	`PT`
Type	AnalogComponent
Bitmap file	phototransistor
Properties	30
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Bf	100	no	forward beta
Br	0.1	no	reverse beta
Is	1e-10	no	dark current (A)
Nf	1	no	forward emission coefficient
Nr	1	no	reverse emission coefficient
Vaf	100	no	forward early voltage (V)
Var	100	no	reverse early voltage (V)
Mje	0.33	no	base-emitter junction exponential factor
Vje	0.75	no	base-emitter junction built-in potential (V)
Cje	1e-12	no	base-emitter zero-bias depletion capacitance (F)
Mjc	0.33	no	base-collector junction exponential factor
Vjc	0.75	no	base-collector junction built-in potential (V)
Cjc	2e-12	no	base-collector zero-bias depletion capacitance (F)
Tr	100n	no	ideal reverse transit time (s)
Tf	0.1n	no	ideal forward transit time (s)
Ikf	10	no	high current corner for forward beta (A)
Ikr	10	no	high current corner for reverse beta (A)
Rc	10	no	collector series resistance (Ohm)
Re	1	no	emitter series resistance (Ohm)
Rb	100	no	base series resistance (Ohm)
Kf	1e-12	no	flicker noise coefficient
Ffe	1	no	flicker noise coefficient
Af	1	no	flicker noise exponent
Responsivity	1.5	no	responsivity at relative selectivity=100% (A/W)
P0	2.6122e3	no	relative selectivity polynomial coefficient
P1	-1.489e1	no	relative selectivity polynomial coefficient
P2	3.0332e-2	no	relative selectivity polynomial coefficient
P3	-2.5708e-5	no	relative selectivity polynomial coefficient
P4	7.6923e-9	no	relative selectivity polynomial coefficient
Temp	26.85	no	simulation temperature

Nigbt¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	NIGBT
Description	NIGBT verilog device
Schematic entry	`nigbt`
Netlist entry	`T`
Type	AnalogComponent
Bitmap file	nigbt
Properties	19
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Agd	5.0e-6	no	gate-drain overlap area (m**2)
Area	1.0e-5	no	area of the device (m**2)
Kp	0.38	no	MOS transconductance (A/V**2)
Tau	7.1e-6	no	ambipolar recombination lifetime (s)
Wb	9.0e-5	no	metallurgical base width (m)
BVf	1.0	no	avalanche uniformity factor
BVn	4.0	no	avalanche multiplication exponent
Cgs	1.24e-8	no	gate-source capacitance per unit area (F/cm**2)
Coxd	3.5e-8	no	gate-drain oxide capacitance per unit area (F/cm**2)
Jsne	6.5e-13	no	emitter saturation current density (A/cm**2)
Kf	1.0	no	triode region factor
Mun	1.5e-3	no	electron mobility (cm**2/Vs)
Mup	4.5e-2	no	hole mobility (cm**2/Vs)
Nb	2.0e14	no	base doping (1/cm**3)
Theta	0.02	no	transverse field factor (1/V)
Vt	4.7	no	threshold voltage (V)
Vtd	1.0e-3	no	gate-drain overlap depletion threshold (V)
Tnom	26.85	no	parameter measurement temperature (Celsius)
Temp	26.85	no	simulation temperature (Celsius)

Voltage Controlled Resistor¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Voltage Controlled Resistor
Description	voltage controlled voltage source
Schematic entry	`vcresistor`
Netlist entry	`VCR`
Type	AnalogComponent
Bitmap file	vcresistor
Properties	1
Category	verilog-a devices

Component Parameters¶

Default Parameters
Name	Value	Display	Description
gain	1	yes	resistance gain

Digital Components¶

Digital Source¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	digital source
Description	digital source
Schematic entry	`DigiSource`
Netlist entry	`S`
Type	Component
Bitmap file	digi_source
Properties	4
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Num	1	yes	number of the port
init	low	no	initial output value [low, high]
times	1ns; 1ns	no	list of times for changing output value
V	1 V	no	voltage of high level

Inverter¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Inverter
Description	logical inverter
Schematic entry	`Inv`
Netlist entry	`Y`
Type	Component
Bitmap file	inverter
Properties	4
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
V	1 V	no	voltage of high level
t	0	no	delay time
TR	10	no	transfer function scaling factor
Symbol	old	no	schematic symbol [old, DIN40900]

N-Port Or¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	n-port OR
Description	logical OR
Schematic entry	`OR`
Netlist entry	`Y`
Type	Component
Bitmap file	or
Properties	5
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
in	2	no	number of input ports
V	1 V	no	voltage of high level
t	0	no	delay time
TR	10	no	transfer function scaling factor
Symbol	old	no	schematic symbol [old, DIN40900]

N-Port Nor¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	n-port NOR
Description	logical NOR
Schematic entry	`NOR`
Netlist entry	`Y`
Type	Component
Bitmap file	nor
Properties	5
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
in	2	no	number of input ports
V	1 V	no	voltage of high level
t	0	no	delay time
TR	10	no	transfer function scaling factor
Symbol	old	no	schematic symbol [old, DIN40900]

N-Port And¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	n-port AND
Description	logical AND
Schematic entry	`AND`
Netlist entry	`Y`
Type	Component
Bitmap file	and
Properties	5
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
in	2	no	number of input ports
V	1 V	no	voltage of high level
t	0	no	delay time
TR	10	no	transfer function scaling factor
Symbol	old	no	schematic symbol [old, DIN40900]

N-Port Nand¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	n-port NAND
Description	logical NAND
Schematic entry	`NAND`
Netlist entry	`Y`
Type	Component
Bitmap file	nand
Properties	5
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
in	2	no	number of input ports
V	1 V	no	voltage of high level
t	0	no	delay time
TR	10	no	transfer function scaling factor
Symbol	old	no	schematic symbol [old, DIN40900]

N-Port Xor¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	n-port XOR
Description	logical XOR
Schematic entry	`XOR`
Netlist entry	`Y`
Type	Component
Bitmap file	xor
Properties	5
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
in	2	no	number of input ports
V	1 V	no	voltage of high level
t	0	no	delay time
TR	10	no	transfer function scaling factor
Symbol	old	no	schematic symbol [old, DIN40900]

N-Port Xnor¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	n-port XNOR
Description	logical XNOR
Schematic entry	`XNOR`
Netlist entry	`Y`
Type	Component
Bitmap file	xnor
Properties	5
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
in	2	no	number of input ports
V	1 V	no	voltage of high level
t	0	no	delay time
TR	10	no	transfer function scaling factor
Symbol	old	no	schematic symbol [old, DIN40900]

Buffer¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Buffer
Description	logical buffer
Schematic entry	`Buf`
Netlist entry	`Y`
Type	Component
Bitmap file	buffer
Properties	4
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
V	1 V	no	voltage of high level
t	0	no	delay time
TR	10	no	transfer function scaling factor
Symbol	old	no	schematic symbol [old, DIN40900]

4X2 Andor¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	4x2 AndOr
Description	4x2 andor verilog device
Schematic entry	`andor4x2`
Netlist entry	`Y`
Type	Component
Bitmap file	andor4x2
Properties	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
TR	6	no	transfer function high scaling factor
Delay	1 ns	no	output delay (s)

4X3 Andor¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	4x3 AndOr
Description	4x3 andor verilog device
Schematic entry	`andor4x3`
Netlist entry	`Y`
Type	Component
Bitmap file	andor4x3
Properties	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
TR	6	no	transfer function high scaling factor
Delay	1 ns	no	output delay (s)

4X4 Andor¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	4x4 AndOr
Description	4x4 andor verilog device
Schematic entry	`andor4x4`
Netlist entry	`Y`
Type	Component
Bitmap file	andor4x4
Properties	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
TR	6	no	transfer function high scaling factor
Delay	1 ns	no	output delay (s)

2To1 Mux¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	2to1 Mux
Description	2to1 multiplexer verilog device
Schematic entry	`mux2to1`
Netlist entry	`Y`
Type	Component
Bitmap file	mux2to1
Properties	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
TR	6	no	transfer function high scaling factor
Delay	1 ns	no	output delay (s)

4To1 Mux¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	4to1 Mux
Description	4to1 multiplexer verilog device
Schematic entry	`mux4to1`
Netlist entry	`Y`
Type	Component
Bitmap file	mux4to1
Properties	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
TR	6	no	transfer function high scaling factor
Delay	1 ns	no	output delay (s)

8To1 Mux¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	8to1 Mux
Description	8to1 multiplexer verilog device
Schematic entry	`mux8to1`
Netlist entry	`Y`
Type	Component
Bitmap file	mux8to1
Properties	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
TR	6	no	transfer function high scaling factor
Delay	1 ns	no	output delay (s)

2To4 Demux¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	2to4 Demux
Description	2to4 demultiplexer verilog device
Schematic entry	`dmux2to4`
Netlist entry	`Y`
Type	Component
Bitmap file	dmux2to4
Properties	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
TR	6	no	transfer function high scaling factor
Delay	1 ns	no	output delay (s)

3To8 Demux¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	3to8 Demux
Description	3to8 demultiplexer verilog device
Schematic entry	`dmux3to8`
Netlist entry	`Y`
Type	Component
Bitmap file	dmux3to8
Properties	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
TR	6	no	transfer function high scaling factor
Delay	1 ns	no	output delay (s)

4To16 Demux¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	4to16 Demux
Description	4to16 demultiplexer verilog device
Schematic entry	`dmux4to16`
Netlist entry	`Y`
Type	Component
Bitmap file	dmux4to16
Properties	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
TR	6	no	transfer function high scaling factor
Delay	1 ns	no	output delay (s)

1Bit Halfadder¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	1Bit HalfAdder
Description	1bit half adder verilog device
Schematic entry	`ha1b`
Netlist entry	`Y`
Type	Component
Bitmap file	ha1b
Properties	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
TR	6	no	transfer function high scaling factor
Delay	1 ns	no	output delay (s)

1Bit Fulladder¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	1Bit FullAdder
Description	1bit full adder verilog device
Schematic entry	`fa1b`
Netlist entry	`Y`
Type	Component
Bitmap file	fa1b
Properties	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
TR	6	no	transfer function high scaling factor
Delay	1 ns	no	output delay (s)

2Bit Fulladder¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	2Bit FullAdder
Description	2bit full adder verilog device
Schematic entry	`fa2b`
Netlist entry	`Y`
Type	Component
Bitmap file	fa2b
Properties	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
TR	6	no	transfer function high scaling factor
Delay	1 ns	no	output delay (s)

Rs-Flipflop¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	RS-FlipFlop
Description	RS flip flop
Schematic entry	`RSFF`
Netlist entry	`Y`
Type	DigitalComponent
Bitmap file	rsflipflop
Properties	1
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
t	0	no	delay time

D-Flipflop¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	D-FlipFlop
Description	D flip flop with asynchron reset
Schematic entry	`DFF`
Netlist entry	`Y`
Type	DigitalComponent
Bitmap file	dflipflop
Properties	1
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
t	0	no	delay time

D-Flipflop W/ Sr¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	D-FlipFlop w/ SR
Description	D flip flop with set and reset verilog device
Schematic entry	`dff_SR`
Netlist entry	`Y`
Type	Component
Bitmap file	dff_SR
Properties	3
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
TR_H	6	no	cross coupled gate transfer function high scaling factor
TR_L	5	no	cross coupled gate transfer function low scaling factor
Delay	1 ns	no	cross coupled gate delay (s)

Jk-Flipflop¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	JK-FlipFlop
Description	JK flip flop with asynchron set and reset
Schematic entry	`JKFF`
Netlist entry	`Y`
Type	DigitalComponent
Bitmap file	jkflipflop
Properties	1
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
t	0	no	delay time

Jk-Flipflop W/ Sr¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	JK-FlipFlop w/ SR
Description	jk flip flop with set and reset verilog device
Schematic entry	`jkff_SR`
Netlist entry	`Y`
Type	Component
Bitmap file	jkff_SR
Properties	3
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
TR_H	6	no	cross coupled gate transfer function high scaling factor
TR_L	5	no	cross coupled gate transfer function low scaling factor
Delay	1 ns	no	cross coupled gate delay (s)

T-Flipflop W/ Sr¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	T-FlipFlop w/ SR
Description	T flip flop with set and reset verilog device
Schematic entry	`tff_SR`
Netlist entry	`Y`
Type	Component
Bitmap file	tff_SR
Properties	3
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
TR_H	6	no	cross coupled gate transfer function high scaling factor
TR_L	5	no	cross coupled gate transfer function low scaling factor
Delay	1 ns	no	cross coupled gate delay (s)

Gated D-Latch¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Gated D-Latch
Description	gated D latch verilog device
Schematic entry	`gatedDlatch`
Netlist entry	`Y`
Type	Component
Bitmap file	gatedDlatch
Properties	3
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
TR_H	6	no	cross coupled gate transfer function high scaling factor
TR_L	5	no	cross coupled gate transfer function low scaling factor
Delay	1 ns	no	cross coupled gate delay (s)

Logic 0¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Logic 0
Description	logic 0 verilog device
Schematic entry	`logic_0`
Netlist entry	`S`
Type	Component
Bitmap file	logic_0
Properties	1
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
LEVEL	0	no	logic 0 voltage level (V)

Logic 1¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Logic 1
Description	logic 1 verilog device
Schematic entry	`logic_1`
Netlist entry	`S`
Type	Component
Bitmap file	logic_1
Properties	1
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
LEVEL	1	no	logic 1 voltage level (V)

2Bit Pattern¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	2Bit Pattern
Description	2bit pattern generator verilog device
Schematic entry	`pad2bit`
Netlist entry	`Y`
Type	Component
Bitmap file	pad2bit
Properties	1
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Number	0	no	pad output value

3Bit Pattern¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	3Bit Pattern
Description	3bit pattern generator verilog device
Schematic entry	`pad3bit`
Netlist entry	`Y`
Type	Component
Bitmap file	pad3bit
Properties	1
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Number	0	no	pad output value

4Bit Pattern¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	4Bit Pattern
Description	4bit pattern generator verilog device
Schematic entry	`pad4bit`
Netlist entry	`Y`
Type	Component
Bitmap file	pad4bit
Properties	1
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Number	0	no	pad output value

A2D Level Shifter¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	A2D Level Shifter
Description	data voltage level shifter (analogue to digital) verilog device
Schematic entry	`DLS_nto1`
Netlist entry	`Y`
Type	AnalogComponent
Bitmap file	DLS_nto1
Properties	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
LEVEL	5 V	no	voltage level (V)
Delay	1 ns	no	time delay (s)

D2A Level Shifter¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	D2A Level Shifter
Description	data voltage level shifter (digital to analogue) verilog device
Schematic entry	`DLS_1ton`
Netlist entry	`Y`
Type	AnalogComponent
Bitmap file	DLS_1ton
Properties	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
LEVEL	5 V	no	voltage level
Delay	1 ns	no	time delay (s)

4Bit Bin2Grey¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	4Bit Bin2Grey
Description	4bit binary to grey converter verilog device
Schematic entry	`binarytogrey4bit`
Netlist entry	`Y`
Type	Component
Bitmap file	binarytogrey4bit
Properties	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
TR	6	no	transfer function scaling factor
Delay	1 ns	no	output delay (s)

4Bit Grey2Bin¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	4Bit Grey2Bin
Description	4bit grey to binary converter verilog device
Schematic entry	`greytobinary4bit`
Netlist entry	`Y`
Type	Component
Bitmap file	greytobinary4bit
Properties	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
TR	6	no	transfer function scaling factor
Delay	1 ns	no	output delay (s)

1Bit Comparator¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	1Bit Comparator
Description	1bit comparator verilog device
Schematic entry	`comp_1bit`
Netlist entry	`Y`
Type	Component
Bitmap file	comp_1bit
Properties	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
TR	6	no	transfer function high scaling factor
Delay	1 ns	no	output delay (s)

2Bit Comparator¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	2Bit Comparator
Description	2bit comparator verilog device
Schematic entry	`comp_2bit`
Netlist entry	`Y`
Type	Component
Bitmap file	comp_2bit
Properties	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
TR	6	no	transfer function high scaling factor
Delay	1 ns	no	output delay (s)

4Bit Comparator¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	4Bit Comparator
Description	4bit comparator verilog device
Schematic entry	`comp_4bit`
Netlist entry	`Y`
Type	Component
Bitmap file	comp_4bit
Properties	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
TR	6	no	transfer function high scaling factor
Delay	1 ns	no	output delay (s)

4Bit Hpri-Bin¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	4Bit HPRI-Bin
Description	4bit highest priority encoder (binary form) verilog device
Schematic entry	`hpribin4bit`
Netlist entry	`Y`
Type	Component
Bitmap file	hpribin4bit
Properties	2
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
TR	6	no	transfer function scaling factor
Delay	1 ns	no	output delay (s)

Vhdl File¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	VHDL file
Description	VHDL file
Schematic entry	`VHDL`
Netlist entry	`X`
Type	DigitalComponent
Bitmap file	vhdlfile
Properties	1
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
File	sub.vhdl	no	Name of VHDL file

Verilog File¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Verilog file
Description	Verilog file
Schematic entry	`Verilog`
Netlist entry	`X`
Type	DigitalComponent
Bitmap file	vhdlfile
Properties	1
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
File	sub.v	no	Name of Verilog file

Digital Simulation¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	digital simulation
Description	digital simulation
Schematic entry	`.Digi`
Netlist entry	`Digi`
Type	DigitalComponent
Bitmap file	digi
Properties	3
Category	digital components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Type	TruthTable	yes	type of simulation [TruthTable, TimeList]
time	10 ns	no	duration of TimeList simulation
Model	VHDL	no	netlist format [VHDL, Verilog]

File Components¶

Spice Netlist¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	SPICE netlist
Description	SPICE netlist file
Schematic entry	`SPICE`
Netlist entry	`X`
Type	AnalogComponent
Bitmap file	spicefile
Properties	4
Category	file components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
File		yes	x
Ports		no	x
Sim	yes	no	x
Preprocessor	none	no	x

1-Port S Parameter File¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	1-port S parameter file
Description	S parameter file
Schematic entry	`SPfile`
Netlist entry	`X`
Type	AnalogComponent
Bitmap file	spfile1
Properties	5
Category	file components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
File	test.s1p	yes	name of the s parameter file
Data	rectangular	no	data type [rectangular, polar]
Interpolator	linear	no	interpolation type [linear, cubic]
duringDC	open	no	representation during DC analysis [open, short, shortall, unspecified]
Ports	1	no	number of ports

2-Port S Parameter File¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	2-port S parameter file
Description	S parameter file
Schematic entry	`SPfile`
Netlist entry	`X`
Type	AnalogComponent
Bitmap file	spfile2
Properties	5
Category	file components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
File	test.s2p	yes	name of the s parameter file
Data	rectangular	no	data type [rectangular, polar]
Interpolator	linear	no	interpolation type [linear, cubic]
duringDC	open	no	representation during DC analysis [open, short, shortall, unspecified]
Ports	2	no	number of ports

N-Port S Parameter File¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	n-port S parameter file
Description	S parameter file
Schematic entry	`SPfile`
Netlist entry	`X`
Type	AnalogComponent
Bitmap file	spfile3
Properties	5
Category	file components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
File	test.s3p	yes	name of the s parameter file
Data	rectangular	no	data type [rectangular, polar]
Interpolator	linear	no	interpolation type [linear, cubic]
duringDC	open	no	representation during DC analysis [open, short, shortall, unspecified]
Ports	3	no	number of ports

Subcircuit¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Subcircuit
Description	subcircuit
Schematic entry	`Sub`
Netlist entry	`SUB`
Type	Component
Bitmap file	subcircuit
Properties	1
Category	file components

Component Parameters¶

Default Parameters
Name	Value	Display	Description
File		no	name of qucs schematic file

Simulations¶

Dc Simulation¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	dc simulation
Description	dc simulation
Schematic entry	`.DC`
Netlist entry	`DC`
Type	AnalogComponent
Bitmap file	dc
Properties	9
Category	simulations

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Temp	26.85	no	simulation temperature in degree Celsius
reltol	0.001	no	relative tolerance for convergence
abstol	1 pA	no	absolute tolerance for currents
vntol	1 uV	no	absolute tolerance for voltages
saveOPs	no	no	put operating points into dataset [yes, no]
MaxIter	150	no	maximum number of iterations until error
saveAll	no	no	save subcircuit nodes into dataset [yes, no]
convHelper	none	no	preferred convergence algorithm [none, gMinStepping, SteepestDescent, LineSearch, Attenuation, SourceStepping]
Solver	CroutLU	no	method for solving the circuit matrix [CroutLU, DoolittleLU, HouseholderQR, HouseholderLQ, GolubSVD]

Transient Simulation¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Transient simulation
Description	transient simulation
Schematic entry	`.TR`
Netlist entry	`TR`
Type	AnalogComponent
Bitmap file	tran
Properties	20
Category	simulations

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Type	lin	yes	sweep type [lin, log, list, const]
Start	0	yes	start time in seconds
Stop	1 ms	yes	stop time in seconds
Points	11	no	number of simulation time steps
IntegrationMethod	Trapezoidal	no	integration method [Euler, Trapezoidal, Gear, AdamsMoulton]
Order	2	no	order of integration method (1-6)
InitialStep	1 ns	no	initial step size in seconds
MinStep	1e-16	no	minimum step size in seconds
MaxIter	150	no	maximum number of iterations until error
reltol	0.001	no	relative tolerance for convergence
abstol	1 pA	no	absolute tolerance for currents
vntol	1 uV	no	absolute tolerance for voltages
Temp	26.85	no	simulation temperature in degree Celsius
LTEreltol	1e-3	no	relative tolerance of local truncation error
LTEabstol	1e-6	no	absolute tolerance of local truncation error
LTEfactor	1	no	overestimation of local truncation error
Solver	CroutLU	no	method for solving the circuit matrix [CroutLU, DoolittleLU, HouseholderQR, HouseholderLQ, GolubSVD]
relaxTSR	no	no	relax time step raster [no, yes]
initialDC	yes	no	perform an initial DC analysis [yes, no]
MaxStep	0	no	maximum step size in seconds

Ac Simulation¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	ac simulation
Description	ac simulation
Schematic entry	`.AC`
Netlist entry	`AC`
Type	AnalogComponent
Bitmap file	ac
Properties	5
Category	simulations

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Type	lin	yes	sweep type [lin, log, list, const]
Start	1 GHz	yes	start frequency in Hertz
Stop	10 GHz	yes	stop frequency in Hertz
Points	19	yes	number of simulation steps
Noise	no	no	calculate noise voltages [yes, no]

S-Parameter Simulation¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	S-parameter simulation
Description	S parameter simulation
Schematic entry	`.SP`
Netlist entry	`SP`
Type	AnalogComponent
Bitmap file	sparameter
Properties	9
Category	simulations

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Type	lin	yes	sweep type [lin, log, list, const]
Start	1 GHz	yes	start frequency in Hertz
Stop	10 GHz	yes	stop frequency in Hertz
Points	19	yes	number of simulation steps
Noise	no	no	calculate noise parameters [yes, no]
NoiseIP	1	no	input port for noise figure
NoiseOP	2	no	output port for noise figure
saveCVs	no	no	put characteristic values into dataset [yes, no]
saveAll	no	no	save subcircuit characteristic values into dataset [yes, no]

Harmonic Balance¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Harmonic balance
Description	Harmonic balance simulation
Schematic entry	`.HB`
Netlist entry	`HB`
Type	AnalogComponent
Bitmap file	hb
Properties	6
Category	simulations

Component Parameters¶

Default Parameters
Name	Value	Display	Description
f	1 GHz	no	frequency in Hertz
n	4	yes	number of harmonics
iabstol	1 pA	no	absolute tolerance for currents
vabstol	1 uV	no	absolute tolerance for voltages
reltol	0.001	no	relative tolerance for convergence
MaxIter	150	no	maximum number of iterations until error

Parameter Sweep¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	Parameter sweep
Description	Parameter sweep
Schematic entry	`.SW`
Netlist entry	`SW`
Type	AnalogComponent
Bitmap file	sweep
Properties	6
Category	simulations

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Sim		yes	simulation to perform parameter sweep on
Type	lin	yes	sweep type [lin, log, list, const]
Param	R1	yes	parameter to sweep
Start	5 Ohm	yes	start value for sweep
Stop	50 Ohm	yes	stop value for sweep
Points	20	yes	number of simulation steps

Digital Simulation¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	digital simulation
Description	digital simulation
Schematic entry	`.Digi`
Netlist entry	`Digi`
Type	DigitalComponent
Bitmap file	digi
Properties	3
Category	simulations

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Type	TruthTable	yes	type of simulation [TruthTable, TimeList]
time	10 ns	no	duration of TimeList simulation
Model	VHDL	no	netlist format [VHDL, Verilog]

Optimization¶

Symbol¶

Component Data¶

Component Data
Field	Value
Caption	optimization
Description	Optimization
Schematic entry	`.Opt`
Netlist entry	`Opt`
Type	AnalogComponent
Bitmap file	optimize
Properties	2
Category	simulations

Component Parameters¶

Default Parameters
Name	Value	Display	Description
Sim		no
DE	3\|50\|2\|20\|0.85\|1\|3\|1e-6\|10\|100	no