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Qucs-core
0.0.19
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00001 /* 00002 * device.h - device class definitions 00003 * 00004 * Copyright (C) 2004, 2005, 2006 Stefan Jahn <stefan@lkcc.org> 00005 * 00006 * This is free software; you can redistribute it and/or modify 00007 * it under the terms of the GNU General Public License as published by 00008 * the Free Software Foundation; either version 2, or (at your option) 00009 * any later version. 00010 * 00011 * This software is distributed in the hope that it will be useful, 00012 * but WITHOUT ANY WARRANTY; without even the implied warranty of 00013 * MERCHANTABILITY or FITNESS FOR A PARTICULAR PURPOSE. See the 00014 * GNU General Public License for more details. 00015 * 00016 * You should have received a copy of the GNU General Public License 00017 * along with this package; see the file COPYING. If not, write to 00018 * the Free Software Foundation, Inc., 51 Franklin Street - Fifth Floor, 00019 * Boston, MA 02110-1301, USA. 00020 * 00021 * $Id$ 00022 * 00023 */ 00024 00025 #ifndef __DEVICE_H__ 00026 #define __DEVICE_H__ 00027 00028 namespace qucs { 00029 00030 class circuit; 00031 class node; 00032 class net; 00033 00034 namespace device { 00035 00036 // creates external resistor circuit 00037 circuit * 00038 splitResistor ( 00039 circuit * base, // calling circuit (this) 00040 circuit * res, // additional resistor circuit (can be NULL) 00041 const char * c, // name of the additional circuit 00042 const char * n, // name of the inserted (internal) node 00043 int internal); // number of new node (the original external node) 00044 00045 // removes external resistor circuit 00046 void 00047 disableResistor ( 00048 circuit * base, // calling circuit (this) 00049 circuit * res, // additional resistor circuit 00050 int internal); // number of new node (the original external node) 00051 00052 // creates external capacitor circuit 00053 circuit * 00054 splitCapacitor ( 00055 circuit * base, // calling circuit (this) 00056 circuit * cap, // additional capacitor circuit (can be NULL) 00057 const char * c, // name of the additional circuit 00058 node * n1, // first node of new capacitor 00059 node * n2); // second node of new capacitor 00060 00061 // removes external capacitor circuit 00062 void 00063 disableCapacitor ( 00064 circuit * base, // calling circuit (this) 00065 circuit * cap); // additional capacitor circuit 00066 00067 // checks whether circuit is enabled 00068 int 00069 deviceEnabled ( 00070 circuit * c); // circuit to be checked 00071 00072 // computes current and its derivative for a MOS pn-junction 00073 void 00074 pnJunctionMOS ( 00075 nr_double_t Upn, // pn-voltage 00076 nr_double_t Iss, // saturation current 00077 nr_double_t Ute, // temperature voltage 00078 nr_double_t& I, // result current 00079 nr_double_t& g); // result derivative 00080 00081 // computes current and its derivative for a bipolar pn-junction 00082 void 00083 pnJunctionBIP ( 00084 nr_double_t Upn, // pn-voltage 00085 nr_double_t Iss, // saturation current 00086 nr_double_t Ute, // temperature voltage 00087 nr_double_t& I, // result current 00088 nr_double_t& g); // result derivative 00089 00090 // limits the forward pn-voltage 00091 nr_double_t 00092 pnVoltage ( 00093 nr_double_t Ud, // current pn-voltage 00094 nr_double_t Uold, // previous pn-voltage 00095 nr_double_t Ut, // temperature voltage 00096 nr_double_t Ucrit); // critical voltage 00097 00098 // computes the exponential pn-junction current 00099 nr_double_t 00100 pnCurrent ( 00101 nr_double_t Upn, // pn-voltage 00102 nr_double_t Iss, // saturation current 00103 nr_double_t Ute); // temperature voltage 00104 00105 // computes the exponential pn-junction current's derivative 00106 nr_double_t 00107 pnConductance ( 00108 nr_double_t Upn, // pn-voltage 00109 nr_double_t Iss, // saturation current 00110 nr_double_t Ute); // temperature voltage 00111 00112 // computes pn-junction depletion capacitance 00113 nr_double_t 00114 pnCapacitance ( 00115 nr_double_t Uj, // pn-voltage 00116 nr_double_t Cj, // zero-bias capacitance 00117 nr_double_t Vj, // built-in potential 00118 nr_double_t Mj, // grading coefficient 00119 nr_double_t Fc); // forward-bias coefficient 00120 00121 // computes pn-junction depletion charge 00122 nr_double_t 00123 pnCharge ( 00124 nr_double_t Uj, // pn-voltage 00125 nr_double_t Cj, // zero-bias capacitance 00126 nr_double_t Vj, // built-in potential 00127 nr_double_t Mj, // grading coefficient 00128 nr_double_t Fc); // forward-bias coefficient 00129 00130 // computes pn-junction depletion capacitance 00131 nr_double_t 00132 pnCapacitance ( 00133 nr_double_t Uj, // pn-voltage 00134 nr_double_t Cj, // zero-bias capacitance 00135 nr_double_t Vj, // built-in potential 00136 nr_double_t Mj); // grading coefficient 00137 00138 // computes pn-junction depletion charge 00139 nr_double_t 00140 pnCharge ( 00141 nr_double_t Uj, // pn-voltage 00142 nr_double_t Cj, // zero-bias capacitance 00143 nr_double_t Vj, // built-in potential 00144 nr_double_t Mj); // grading coefficient 00145 00146 // compute critical voltage of pn-junction 00147 nr_double_t 00148 pnCriticalVoltage ( 00149 nr_double_t Iss, // saturation current 00150 nr_double_t Ute); // temperature voltage 00151 00152 // limits the forward fet-voltage 00153 nr_double_t 00154 fetVoltage ( 00155 nr_double_t Ufet, // current fet voltage 00156 nr_double_t Uold, // previous fet voltage 00157 nr_double_t Uth); // threshold voltage 00158 00159 // limits the drain-source voltage 00160 nr_double_t 00161 fetVoltageDS ( 00162 nr_double_t Ufet, // current fet voltage 00163 nr_double_t Uold); // previous fet voltage 00164 00165 // calculates the overlap capacitance for mosfet (meyer model) 00166 void 00167 fetCapacitanceMeyer ( 00168 nr_double_t Ugs, // gate-source voltage 00169 nr_double_t Ugd, // gate-drain voltage 00170 nr_double_t Uth, // threshold voltage 00171 nr_double_t Udsat, // drain-source saturation voltage 00172 nr_double_t Phi, // built-in potential 00173 nr_double_t Cox, // oxide capacitance 00174 nr_double_t& Cgs, // resulting gate-source capacitance 00175 nr_double_t& Cgd, // resulting gate-drain capacitance 00176 nr_double_t& Cgb); // resulting gate-bulk capacitance 00177 00178 // computes temperature dependency of energy bandgap 00179 nr_double_t 00180 Egap ( 00181 nr_double_t T, // temperature 00182 nr_double_t Eg0 = Eg0Si); // bandgap at 0K 00183 00184 // computes temperature dependency of intrinsic density 00185 nr_double_t 00186 intrinsicDensity ( 00187 nr_double_t T, // temperature 00188 nr_double_t Eg0 = Eg0Si); // bandgap at 0K 00189 00190 // calculates temperature dependence for saturation current 00191 nr_double_t 00192 pnCurrent_T ( 00193 nr_double_t T1, // reference temperature 00194 nr_double_t T2, // temperature 00195 nr_double_t Is, // saturation current 00196 nr_double_t Eg, // bandgap at 300K 00197 nr_double_t N = 1, // emission coefficient 00198 nr_double_t Xti = 0); // temperature coefficient 00199 00200 // calculates temperature dependence for junction potential 00201 nr_double_t 00202 pnPotential_T ( 00203 nr_double_t T1, // reference temperature 00204 nr_double_t T2, // temperature 00205 nr_double_t Vj, // built-in potential 00206 nr_double_t Eg0 = Eg0Si); // bandgap at 0K 00207 00208 // calculates temperature dependence for junction capacitance 00209 nr_double_t 00210 pnCapacitance_T ( 00211 nr_double_t T1, // reference temperature 00212 nr_double_t T2, // temperature 00213 nr_double_t M, // grading coefficient 00214 nr_double_t VR, // built-in potential ratio 00215 nr_double_t Cj); // zero-bias capacitance 00216 00217 // calculates temperature dependence for junction capacitance 00218 nr_double_t 00219 pnCapacitance_F ( 00220 nr_double_t T1, // reference temperature 00221 nr_double_t T2, // temperature 00222 nr_double_t M, // grading coefficient 00223 nr_double_t VR); // built-in potential ratio: Vj(T2) / Vj(T1) 00224 00225 } // namespace device 00226 00227 } // namespace qucs 00228 00229 #endif /* __DEVICE_H__ */
1.7.6.1